Electronics and Information Engineering
Laboratory name
Functional Semiconductor Devices
Laboratory title
未来の課題克服に貢献する新たな半導体デバイス技術の探求
Laboratory overview
AIやIoTの台頭により半導体はさらなる高性能・低消費電力化が求められます。未来の課題克服に貢献する技術提案を目標に、トランジスタに新材料・機能を融合するなど、新たな半導体デバイス技術の可能性を探求します。
Main research themes
・半導体トランジスタ新規技術の研究
・高性能半導体デバイス新規材料の研究
Individual research theme
  • Study on ferroelectric FETs and thin film materials

    沼田 敏典, 大下 祥雄

    2023

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    Outcome:

    2024
    Ga2O3 film was deposited on a silicon substrate by ALD in our university. Non-ferroelectric thin Ga2O3 was formed, and CV characteristics of MOS capacitor was demonstrated.

    2023
    He joined the institute and open his research laboratory in January 2024. In order to study on this research, he created the specification of a thin-film-deposition device with controlling materials.

  • Research and development of quantum sensor utilizing SiC MOS structurer

    岩田 直高, VILLAMIN Maria Emma (転出・退職), 沼田 敏典, 大下 祥雄

    2024