Updated on 2025/04/22

写真a

 
Toshinori Numata
 
Organization
Graduate School of Engineering Department of Advanced Science and Technology Electronics and Information Engineering Functional Semiconductor Devices Professor   
Degree
博士(工学) ( 2006.3   大阪大学 )

Research Areas

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials

Main research papers

  • SPICE-based performance analysis of Trigate silicon nanowire CMOS circuits

    C. Tanaka*, M. Saitoh*, K. Ota*, K. Uchida*, and T. Numata

    IEEE Transactions on Electron Devices   60 ( 4 )   1451   2013.4.1

    Threshold voltage control by substrate bias in 10-nm-diameter tri-gate nanowire MOSFET on ultrathin BOX

    K. Ota*, M. Saitoh*, C. Tanaka*, and T. Numata

    IEEE Electron Device Letters   34 ( 2 )   187   2013.2.1

    Impact of mechanical stress on gate tunneling currents of germanium and silicon p-type metal-oxide-semiconductor field-effect transistors and metal gate work function

    Y. S. Choi*, T. Numata, T. Nishida*, R. Harris*, and S. E. Thompson*

    Journal of Applied Physics   103   064510   2008.3.24

    Performance Enhancement of Partially and Fully Depleted Strained-SOI MOSFETs

    T. Numata, T. Irisawa*, T. Tezuka*, J. Koga*, N. Hirashita*, K. Usuda*, E. Toyoda*, Y. Miyamura*, A. Tanabe*, N. Sugiyama*, and S. Takagi*

    IEEE Transactions on Electron Devices   53 ( 5 )   1030   2006.5.1

    Device Design For Subthreshold Slope and Threshold Voltage Control in Sub-100-nm Fully Depleted SOI MOSFETs

    T. Numata and S. Takagi*

    IEEE Transactions on Electron Devices   51 ( 12 )   2161   2004.12.1

Research History

  • Toyota Technological Institute   Graduate School of Engineering Department of Advanced Science and Technology Electronics and Information Engineering Functional Semiconductor Devices   Professor

    2024.1

  • Yokohama National University

    2023.4 - 2023.12

  • Tokyo City University

    2021.4 - 2023.12

  • キオクシア(株)   グループ長

    2019.4 - 2023.12

  • 東芝メモリ(株)   参事

    2017.4 - 2019.3

  • Tokyo City University

    2015.4 - 2018.3

  • Interuniversity Microelectronics Centre (imec)   On-siete Manager

    2012.5 - 2015.3

  • University of Florida   Visiting Schalar

    1997.7 - 1998.12

  • (株)東芝   研究開発センター   研究員

    1997.4 - 2017.4

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Education

  • Osaka University

    1995.4 - 1997.3

  • Osaka University

    1991.4 - 1995.3

Professional Memberships

  • Institute of Electical and Electronics Engineers (IEEE)

  • 応用物理学会

Research theme

  • Research and development of quantum sensor utilizing SiC MOS structurer

    岩田 直高, VILLAMIN Maria Emma (転出・退職), 沼田 敏典, 大下 祥雄

    2024

  • Study on ferroelectric FETs and thin film materials

    沼田 敏典, 大下 祥雄

    2023

     More details

    Outcome:

    2024
    Ga2O3 film was deposited on a silicon substrate by ALD in our university. Non-ferroelectric thin Ga2O3 was formed, and CV characteristics of MOS capacitor was demonstrated.

    2023
    He joined the institute and open his research laboratory in January 2024. In order to study on this research, he created the specification of a thin-film-deposition device with controlling materials.

Presentations

  • Novel Sn CVD Precursor for Depositing SnO2 Thin Film as Transparent Conductive Oxide International conference

    Yoshio Ohshita, Toshinori Numata, Atsushi Ogura*, Hyunju Lee*, Hideaki Machida*

    41st European Photovoltaic Solar Energy Conference (EUPVSEC2024)  ( Austria Center Vienna, Vienna, Austria )   2024.9 

     More details

    Event date: 2024.9

    Presentation type:Poster presentation