Updated on 2026/04/13

写真a

 
SIMON Rhenish Caparino
 
Organization
Graduate School of Engineering Department of Advanced Science and Technology Materials Science and Engineering Quantum Interface Laboratory Post Doctoral Fellow   
Degree
Ph.D. ( 2021.2 )

Main research papers

Research theme

  • Passivation-capping of III-V semiconductor quantum structures by oxides

    神谷 格, Ronel Christian Intal ROCA, 岩田 直高, Hanif Mohammadi(転出・退職), SIMON Rhenish Caparino

    2017

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    Outcome:

    2025
    Continuation of the study on the mechanisms of passivation by metal oxide capping.

    2024
    The mechanisms of passivation by metal oxide capping has been investigated. It has been suggested that organometallic precursors change the state of the oxide at the surface upon reaction.

    2023
    By comparing passivation capping by ZnO and AlOx, it was found that the crytallinity of the formed film and the self-cleaning process of the precursors play an important role in determining the properties of the surface quantum dots.

    2022
    By passivating surface InAs quantum dots, enhanced PL intensity with reduced wavelength peak was obtained.