Faculty Profiles
Updated on 2024/05/14
IEEE Trans. Magn. 55 ( 5000204 ) 2018.9.19
Effect of C- and Fe-doped GaN buffer on AlGaN/GaN high electron mobility transistor performance on GaN substrate using side-gate modulation
M.E. Villamin, T. Kondo & N. Iwata
Jpn. J. Appl. Phys. 60 ( SBBD17 ) 2021.3
ArF excimer laser activation of Mg-doped GaN small area mesa device
M.E. Villamin, R.C. Roca, I. Kamiya, N. Iwata
Proc. SPIE , Gallium Nitride Materials and Devices XIX, 12886 128860F 2024.3.8
Tokyo Institute of Technology Material Science and Engineering ライフエンジニアリング Human Centered Science & Biomedical Engineering
2016.10 - 2019.9
Country： Japan
University of the Philippines - Diliman Material Science and Engineering MS Material Science and Engineering
- 2015.12
Country： Philippines
University of the Philippines - Diliman National Institute of Physics BS Applied Physics
Country： Philippines
JSAP
Research on compound semiconductor heterojunction power devices
岩田 直高, VILLAMIN Maria Emma
2017
ArF excimer laser activation of Mg-doped GaN small area mesa device Reviewed International coauthorship
M.E. Villamin, R.C. Roca, I. Kamiya, N. Iwata
Proc. SPIE Gallium Nitride Materials and Devices XIX 12886 128860F 2024.3
Characterization of AlGaN/GaN high electron mobility transistors on GaN substrates with different thicknesses of GaN channel and buffer layers using side-gate modulation Reviewed
VILLAMIN, Maria Emma C., 岩田 直高
Japanese Journal of Applied Physics 61 SA1015 - 1 2021.12
Effect of C- and Fe-doped GaN buffer on AlGaN/GaN HEMT performance on GaN substrate using side-gate modulation Reviewed
VILLAMIN, Maria Emma C., Takaaki Kondo*, 岩田 直高
Japanese Journal of Applied Physics 60 SBBD17 - 1 2021.3
Annealing in Oxygen ambient of In-based contact for Mg-doped p-GaN
Maria Emma Villamin, Naotaka Iwata
2024.3
ArF excimer laser activation of Mg-doped GaN small area mesa device International conference
Maria Emma Villamin, Ronel Christian Roca, Itaru Kamiya, Naotaka Iwata
SPIE Photonics West 2024 ( Moscone Center, San Francisco California ) 2024.1
Formation of In/Au low-temperature contact for vertical superjunction GaN devices with laser-activated p-GaN region International conference
Maria Emma Villamin, Naotaka Iwata
14th International Conference on Nitride Semiconductors (ICNS-14) ( Hilton Fukuoka Sea Hawk ) 2023.11
Annealing temperature dependence of In/Au electrode performance on p-GaN
Maria Emma Villamin, Naotaka Iwata
2023.9
GaN Heterojunction Rectifier Diode with Low Turn-On Voltage and High Breakdown Voltage for Energy Harvesting International conference
Naotaka Iwata, Kouki Hino, Maria Emma Castil Villamin
2023 International Conference on Solid State Devices and Materials(SSDM2023) 2023.9
N2/O2雰囲気アニールによるAu/Ni/p-GaNオーム性接触の低抵抗化
岩田 直高、三明純奈、マリア エマ ヴィリアミン
電子情報通信学会2023年ソサイエティ大会 2023.9
低オン電圧高電流特性を示す環境発電用GaNヘテロ接合 整流ダイオード International conference
Kouki Hino, Maria Emma Villamin, Naotaka Iwata
2023年第70回応用物理学会春季学術講演会 ( 上智大学 ) 2023.3
Comparison of Thermal and ArF Excimer Laser Activation of Mg doped GaN International conference
Maria Emma Villamin, Naotaka Iwata
2023年第70回応用物理学会春季学術講演会 ( 上智大学 ) 2023.3
Drain lag characterization of Fe- and C-doped GaN buffer HEMTs on GaN substrates International conference
Maria Emma Villamin, Naotaka Iwata
The 13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2023) ( 岐阜大学 ) 2023.3
Comparison of side-gate modulation responses for AlGaN/GaN HEMTs on GaN substrates with and without C-doped GaN buffer layer International conference
Maria Emma Villamin, Naotaka Iwata
2021年第68回応用物理学会春季学術講演会 ( Online ) 2021.3
Effect of side-gate modulation on AlGaN/GaN HEMTs on GaN substrates with different GaN channel and buffer thicknesses International conference
Maria Emma Villamin, Naotaka Iwata
the 13th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma2021) ( Online ) 2021.3
Effect of C- and Fe-doped GaN Buffer on AlGaN/GaN HEMT Performance on GaN Substrate Using Side-gate Modulation International conference
Maria Emma Villamin, Takaaki Kondo*, Naotaka Iwata
2020年国際固体素子・材料コンファレンス(SSDM2020) ( Online ) 2020.9
Side gate modulation of AlGaN/GaN HEMTs on GaN with C and Fe doped buffers International conference
Maria Emma Villamin, Takaaki Kondo*, Naotaka Iwata
第81回応用物理学会秋季学術講演会 ( Online ) 2020.9 応用物理学会
Development of GaN superjunction devices with pGaN ArF laser activation for high power application Principal investigator
Grant number：22K20438 研究活動スタート支援 2022 ～ 2023
VILLAMIN MARIAEMMA
