Faculty Profiles - Ronel Christian Intal ROCA

写真a

Ronel Christian Intal ROCA

Organization

Graduate School of Engineering Department of Advanced Science and Technology Materials Science and Engineering Quantum Interface Laboratory Assistant Professor

Degree

Doctor of Engineer （ 2017.9 Tokyo Institute of Technology ）

Homepage

https://www.linkedin.com/in/ronel-christian-roca-4807a926/

External link

Contact information

Research Areas

Natural Science / Semiconductors, optical properties of condensed matter and atomic physics
Natural Science / Magnetism, superconductivity and strongly correlated systems
Nanotechnology/Materials / Optical engineering and photon science
Nanotechnology/Materials / Nanostructural physics
Nanotechnology/Materials / Crystal engineering

Main research papers

Photoluminescence tuning of stacked submonolayer (SML) InAs nanostructures across the 2D to 3D transition

R. C. Roca and I. Kamiya

Appl. Phys. Lett. 118 ( 183104 ) 2021.4.21

Change in Topography of InAs Submonolayer Nanostructures at the 2D to 3D Transition

R. C. Roca and I. Kamiya

258 ( 2000349 ) Front Page 2020.12.7

Correlation between the structure and luminescence of InAs submonolayer stacked nanostructures

R. C. Roca and I Kamiya

60 ( SBBH06 ) 2021.1.13

A lateral-type spin-photodiode based on Fe/x-AlOx/p-InGaAs junctions with a refracting-facet side window

R. C. Roca, et al.

J. Appl. Phys 123 213903 2018.5.10

Effect of the number of stacks on the 2D to 3D transition of stacked submonolayer (SML) InAs nanostructures

R. C. Roca and I Kamiya

J. Cryst. Growth 593 ( 126770 ) 2022.7.6

Research History

Toyota Technological Institute Assistant Professor Assistant Professor

2021.12
Toyota Technological Institute Post Doctoral Fellow Postdoctoral Research Fellow

2018.6 - 2021.5

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Country：Japan
Tokyo Institute of Technology Institute of Innovative Research Project Researcher Research Staff

2017.10 - 2018.5

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Country：Japan

Education

Tokyo Institute of Technology Electronics and Applied Physics Doctor of Engineering

2014.10 - 2017.9

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Country： Japan
University of the Philippines Diliman National Institute of Physics Master of Science (Physics)

2008.6 - 2010.5

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Country： Philippines
University of the Philippines Diliman National Institute of Physics Bachelor of Science in Physics

2003.6 - 2008.4

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Country： Philippines

Professional Memberships

JSAP

2015.1

Research theme

Towards spin quantum bits based on 3D submonolayer quantum dots

Ronel　Christian　Intal　ROCA

2023 - 2025

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The research plan includes 3 parts. Part 1 involves the purchase of supplies and initial assembly and modification of the optical setup. Once the setup is completed, initial spin measurements will be done using existing 3D SML QD samples. This part will take about 3~6 months. Part 2 involves additional optimization of the optical setup, including the realization of smaller spot size in order to measure individual 3D SML QDs. This part will take about 3~6 months. Part 3 will be optimization of the 3D SML QD samples. This will require several sample growths (rest of the project duration).

Outcome：

2023
We were able successfully develop a optical setup that allows for spin injection and detection of samples. Initial results have been presented at the SPIE photonics west 2024 conference.
2D to 3D growth transition of Submonolayer InAs/GaAs nanostructures

Ronel　Christian　Intal　ROCA

2020

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Submonolayer (SML) deposition by MBE is a method that was proposed to assembled InAs nanostructure while maintaining 2D (layer-by-layer) growth. However, it has recently been shown that under certain growth conditions, a transition from 2D to 3D growth regime occurs during SML growth. This process is interesting for both fundamental physics and potential applications.

Outcome：

2023
We were able to investigate various factors that affect the 2D to 3D transition during SML growth. Some of the results have been presented in the JSAP Autumn Meeting 2023.
Passivation-capping of III-V semiconductor quantum structures by oxides

神谷　格, Ronel　Christian　Intal　ROCA, 岩田　直高

2017

Papers

Probing the 2D to 3D growth transition dynamics in InAs/GaAs stacked submonolayer (SML) deposition by photoluminescence Reviewed

Ronel Christian I. Roca and Itaru Kamiya

Proc. SPIE 13376 ( 133760W ) 2025.3

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Authorship：Lead author,　Corresponding author Publishing type：Research paper (international conference proceedings)

DOI： https://doi.org/10.1117/12.3042767
Electrical and structural properties of ArF excimer laser activation of Mg-doped GaN small area mesa device Reviewed

Maria Emma Villamin, Ronel Christian Roca, Itaru Kamiya, and Naotaka Iwata

Optical Engineering 63 ( 9 ) 096101 2024.9

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Language：English Publishing type：Research paper (scientific journal) Publisher：SPIE

DOI： https://doi.org/10.1117/1.OE.63.9.096101
Optical spin injection and detection in submonolayer InAs/GaAs nanostructures by circularly polarized photoluminescence Reviewed

Ronel Christian I. Roca and Itaru Kamiya

Journal of Nanophotonics 18 ( 036001 ) 2024.7

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Authorship：Lead author,　Corresponding author Language：English Publishing type：Research paper (scientific journal) Publisher：SPIE

DOI： https://doi.org/10.1117/1.JNP.18.036001
Optical spin injection and detection in submonolayer InAs/GaAs nanostructures Reviewed

Ronel Christian I. Roca, Itaru Kamiya

Proc. SPIE 12874 ( 1287409 ) 2024.3

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Authorship：Lead author Language：English Publishing type：Research paper (international conference proceedings) Publisher：SPIE

DOI： https://doi.org/10.1117/12.3002062
ArF excimer laser activation of Mg-doped GaN small area mesa device Reviewed

Maria Emma Villamin, Ronel Christian Roca, Itaru Kamiya, Naotaka Iwata

Proc. SPIE 12886 ( 128860F ) 2024.3

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Publishing type：Research paper (international conference proceedings) Publisher：SPIE

DOI： https://doi.org/10.1117/12.3002082
Atomic layer deposition of diethylzinc/zinc oxide on InAs surface quantum dots: Self-clean-up and passivation processes Reviewed

Hanif Mohammadi*, Ronel Christian Intal ROCA, Yuwei Zhang*, Hyunju Lee*, Yoshio Ohshita, Naotaka Iwata, Itaru Kamiya

Applied Surface Science 612 155790 2022.11

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Publishing type：Research paper (scientific journal) Publisher：Elsevier
Anomalous photoluminescence of InAs surface quantum dots: intensity enhancement and strain control by underlying quantum dots Reviewed

Hanif Mohammadi*, Ronel Christian Intal ROCA, Itaru Kamiya

Nanotechnology 33 415204 2022.7

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Publishing type：Research paper (scientific journal) Publisher：IOP
Effect of the number of stacks on the 2D to 3D transition of stacked submonolayer (SML) InAs nanostructures Reviewed

Ronel Christian Intal ROCA, Itaru Kamiya

J. Crryst. Growth 593 126770 2022.6

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Authorship：Lead author Publishing type：Research paper (scientific journal) Publisher：Elsevier
Structural investigation of the 2D to 3D transition in stacked submonolayer InAs nanostructures Reviewed

Ronel Christian Intal ROCA, Itaru Kamiya

AIP Advances 11 075011 2021.7

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Authorship：Lead author Publishing type：Research paper (scientific journal) Publisher：AIP
Photoluminescence tuning of stacked submonolayer (SML) InAs nanostructures across the 2D to 3D transition Reviewed

Ronel Christian Intal ROCA, Itaru Kamiya

Applied Physics Letters 118 183104 2021.5

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Authorship：Lead author Publishing type：Research paper (scientific journal) Publisher：AIP
Submonolayer stacking growth of In(Ga)As nanostructures for optoelectronic applications: an alternative for Stranski-Krastanov growth Reviewed

Itaru Kamiya, Ronel Christian Intal ROCA

Japanese Journal of Applied Physics 60 SB0804 2021.4

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Authorship：Last author Publishing type：Research paper (scientific journal) Publisher：JSAP
Correlation between the structure and luminescence of InAs submonolayer stacked nanostructures Reviewed

Ronel Christian Intal ROCA, Itaru Kamiya

Japanese Journal of Applied Physics 60 SBBH06 2021.1

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Authorship：Lead author Publishing type：Research paper (scientific journal) Publisher：IOP
Change in Topography of InAs Submonolayer Nanostructures at the 2D to 3D Transition Reviewed

Ronel Christian Intal ROCA, Itaru Kamiya

Physica Status Solidi B 258 2000349 2020.12

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Authorship：Lead author Publishing type：Research paper (scientific journal) Publisher：Wiley-VHC
Photoluminescence of pre-growth treatment induced below-bandgap states in GaAs Reviewed

Ronel Christian Intal ROCA, Itaru Kamiya

Japanese Journal of Applied Physics 59 SGGK07 2020.2 （ ISSN:1347-4065 ）

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Authorship：Lead author Publishing type：Research paper (scientific journal) Publisher：AIP
Below-Bandgap Photoluminescence from GaAs Reviewed

Ronel Christian Intal ROCA, Itaru Kamiya

Physica Status Solidi B 257 1900391 2019.12 （ ISSN:1521-3951 ）

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Authorship：Lead author Publishing type：Research paper (scientific journal) Publisher：Wiley-VHC
Below-bandgap photoluminescence from GaAs substrates induced by pre-MBE-growth treatments Reviewed

Ronel Christian Intal ROCA, Itaru Kamiya

AIP Advances 9 075208 2019.7 （ ISSN:2158-3226 ）

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Authorship：Lead author Publishing type：Research paper (scientific journal) Publisher：AIP

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Presentations

Optimization of InAs/GaAs Stacked Submonolayer Nanostructures for Spin-optics

Ronel Christian I. Roca, Itaru Kamiya

72nd JSAP Spring Meeting 2025 ( Tokyo University of Science Noda Campus, Japan ) 2025.3

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Presentation type：Poster presentation
Probing the 2D to 3D growth transition dynamics in InAs/GaAs stacked submonolayer deposition by photoluminescence International conference

Ronel Christian I. Roca, Itaru Kamiya

SPIE Photonics West 2025 ( Moscone Center, San Francisco, California ) 2025.1

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Presentation type：Poster presentation
Control of Structural and Optical Properties of InAs/GaAs Submonolayer Nanostructures by GaAs Spacer Thickness International conference

Ronel Christian I. Roca, Itaru Kamiya

International Conference on MBE 2024 ( Kunibiki Messe, Matsue, Japan ) 2024.9

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Presentation type：Oral presentation (general)
Carrier dynamics in 2D and 3D SML nanostructures by power-dependent PL

Ronel Christian I. Roca, Itaru Kamiya

JSAP Autumn Meeting 2024 ( Toki Messe, Niigata, Japan ) 2024.9

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Presentation type：Poster presentation
Low Density 3D InAs/GaAs Submonolayer Nanostructures for Quantum Information Applications International conference

Ronel Christian I. Roca, Itaru Kamiya

Compound Semiconductor Week (CSW) 2024 ( Lund University, Sweden ) 2024.6

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Presentation type：Poster presentation
Spin optics in SML InAs/GaAs nanostructures by circularly-polarized PL

Ronel Intal Roca, Itaru Kamiya

71st JSAP Spring Meeting 2024 ( Tokyo City University Setagaya Campus, Tokyo, Japan ) 2024.3

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Presentation type：Poster presentation
Optical spin injection and detection in submonolayer InAs/GaAs nanostructures International conference

Ronel Christian I. Roca, Itaru Kamiya

SPIE Photonics West 2024 ( Moscone Center, San Francisco, California ) 2024.1

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Presentation type：Oral presentation (general)
Effect of Low As Flux Annealing to the 2D-3D Transition of SML Nanostructures

Ronel Intal Roca, Itaru Kamiya

84th JSAP Autumn Meeting 2023 ( Kumamoto-jo Hall, Kumamoto, Japan ) 2023.9

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Presentation type：Poster presentation
Photoluminescence Evolution of Submonolayer Nanostructures at the 2D-3D Transition International conference

Ronel Christian Intal ROCA, Itaru Kamiya

The 70th JSAP Spring Meeting 2023 ( 東北大学 ) 2023.3 JSAP

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Presentation type：Oral presentation (general)
Diethylzinc passivation of InAs surface quantum dots International conference

Hanif Mohammadi*, Ronel Christian Intal ROCA, Hyunju Lee*, 岩田　直高, 大下　祥雄, 神谷　格

2023年春季第70回応用物理学関係連合講演会 ( 上智大学 ) 2023.3 応用物理学会

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Presentation type：Oral presentation (general)

ALDにおいて、ジエチル亜鉛を用いたInAs量子ドットのパッシベーション効果に関する報告。
Control of the 3D SML Nanostructure Density by Topmost InAs Cycle Amount International conference

Ronel Christian Intal ROCA, Itaru Kamiya

International Conference on Solid State Devices and Materials (SSDM) 2022 ( 名古屋 ) 2022.9

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Presentation type：Oral presentation (general)
InAs量子ドット/GaAs(001) 上GaAsキャッピングのAs fluxの影響 International conference

若原夏希*, Ronel Christian Intal ROCA, 神谷　格

2022年第83回応用物理学会秋季学術講演会 ( 東北大学川内北キャンパス（オンライン） ) 2022.9 応用物理学会

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Presentation type：Oral presentation (general)

MBEによるGaAs(001)上のInAs量子ドットの GaAs によるキャッピング中のAs流量等の影響に関する報告。
Control of the 3D Submonolayer (SML) Nanostructure Density by GaAs Spacer Thickness International conference

Ronel Christian Intal ROCA, Itaru Kamiya

The 83rd JSAP Autumn Meeting 2022 ( 東北大学 ) 2022.9 JSAP

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Presentation type：Oral presentation (general)
サブモノレイヤー成長法によるInAs量子ドットの密度制御 International conference

平墳直*, Ronel Christian Intal ROCA, 神谷　格

2022年第83回応用物理学会秋季学術講演会 ( 東北大学川内北キャンパス（オンライン） ) 2022.9 応用物理学会

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Presentation type：Oral presentation (general)

MBEによるサブモノレイヤー積層法を用いたInAs/GaAsの成長における積層変調を用いた量子ドット密度の制御に関する報告。
PL enhancement of InAs surface quantum dots by ex situ DEZ/ZnO passivation capping International conference

Hanif Mohammadi*, Ronel Christian Intal ROCA, Yuwei Zhang*, Hyunju Lee*, 岩田　直高, 大下　祥雄, 神谷　格

2022年第83回応用物理学会秋季学術講演会 ( 東北大学川内北キャンパス（オンライン） ) 2022.9 応用物理学会

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Presentation type：Oral presentation (general)

ALD法によるDEZを用いたInAs量子ドットのパッシベーション被覆によるPL発光強度の増強に関する報告。
サブモノレイヤー成長法におけるGaAs膜厚による量子構造制御 International conference

奥泉陽斗*, Ronel Christian Intal ROCA, 神谷　格

春季第69回応用物理学関係連合講演会 ( 青山学院大学相模原キャンパス（Zoom） ) 2022.3 応用物理学会

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Presentation type：Oral presentation (general)

MBE で InAs/GaAs 交互積層するサブモノレイヤー成長法を用いて量子構造を作製する際の、GaAs 層の膜厚による構造制御の結果を報告した。
Luminescence of 10-stack Submonolayer InAs Nanostructures at the 2D-3D Transition International conference

Ronel Christian Intal ROCA, Itaru Kamiya

69th JSAP Spring Meeting 2022 ( オンライン ) 2022.3 JSAP

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Presentation type：Oral presentation (general)
Photoluminescence enhancement of InAs surface quantum dots by Al₂O₃ passivation International conference

Hanif Mohammadi*, Ronel Christian Intal ROCA, Yuwei Zhang*, Hyunji Lee*, 大下　祥雄, 岩田　直高, 神谷　格

春季第69回応用物理学関係連合講演会 ( 青山学院大学相模原キャンパス ) 2022.3 応用物理学会

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Presentation type：Oral presentation (general)

Photoluminescence enhancement of InAs surface quantum dots by Al2O3 passivation using atomic layer deposition was reported.
Post-Growth Annealing of Stacked Submonolayer (SML) InAs Nanostructures International conference

Ronel Christian Intal ROCA, Itaru Kamiya

82nd JSAP Autumn Meeting 2021 ( Online Virtual (Nagoya, Japan) ) 2021.9 JSAP

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Presentation type：Oral presentation (general)
GaAs(001)上InAs量子ドットのGaAsキャップ成長初期過程 International conference

若原夏希*, Ronel Christian Intal ROCA, 神谷　格

第82回応用物理学会秋季学術講演会 ( 名城大学（Zoom） ) 2021.9 応用物理学会

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Presentation type：Oral presentation (general)

GaAs(001)上にMBEで成長されるInAs量子ドットについて、GaAsで被覆する際の初期過程で相互拡散や歪による形状変化と電子物性を検討した結果を報告した。
Long wavelength PL of InAs surface quantum dots enhanced by underlying reservoirs International conference

Hanif Mohammadi*, Ronel Christian Intal ROCA, 神谷　格

第82回応用物理学会秋季学術講演会 ( 名城大学（Zoom） ) 2021.9 応用物理学会

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Presentation type：Oral presentation (general)

The influence of underlying quantum dots (QDs) on InAs surface quantum dots (SQDs) on their photoluminescence (PL) properties were discussed. The insertion of underlying QDs resulted in enhancement of the PL intensity, and the wavelength was shown to be controlled by the spacer layer thickness.
Effect of the Number of Stacks on the 2D to 3D Transition of Stacked Submonolayer (SML) InAs Nanostructures International conference

Ronel Christian Intal ROCA, Itaru Kamiya

21st International Conference on MBE (ICMBE) 2021 ( Virtual (Puerto Vallarta, Mexico) ) 2021.9

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Presentation type：Oral presentation (general)
Control of the 2D to 3D Transition of Stacked Submonolayer (SML) InAs Nanostructures by As2 Flux International conference

Ronel Christian Intal ROCA, Itaru Kamiya

Compound Semiconductor Week 2021 ( Online Virtual (Stockholm, Sweden) ) 2021.5

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Presentation type：Oral presentation (general)
Control of Density of 3D Stacked Submonolayer (SML) InAs Nanostructures by As2 Flux International conference

Ronel Christian Intal ROCA, Itaru Kamiya

JSAP Spring Meeting 2021 ( Online Virtual ) 2021.3 JSAP

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Presentation type：Oral presentation (general)

Stacked submonolayer (SML) growth of InAs nanostructures by MBE has been gaining interest recently for various optoelectronic applications. In contrast to the well-known Stranski-Krastanov (SK) growth of InAs nanostructures, stacked SML growth involves the cycled deposition of SML-thick InAs and few ML-thick GaAs. We have recently reported evidence of the 2D to 3D transition in SML InAs nanostructures. This transition leads to the existence of two distinct kinds of stacked SML nanostructures: 2D islands and 3D structures. Compared to the analogous transition in SK growth, the properties of the stacked SML transition is not yet well investigated. Hence, this study aims to elucidate the controllability of the density of 3D structures by As2 flux. It will be demonstrated that a wide control of 3D structure density (10^8 ~ 10^10 cm^-2) is possible simply by adjusting the As2 flux in stacked SML growth.
Correlation between Structure and Luminescence of InAs Submonolayer (SML) Nanostructures International conference

Ronel Christian Intal ROCA, Itaru Kamiya

International Conference on Solid State Devices and Materials (SSDM) 2020 ( Online Virtual ) 2020.9 JSAP

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Presentation type：Oral presentation (general)

The correlation between the structural and photo-luminescence (PL) properties of InAs submonolayer (SML) nanostructures at the 2D to 3D transition is in-vestigated. Significant changes in the topography of uncapped InAs nanostructures assembled by SML growth have been observed, indicating the transition from 2D to 3D growth regime. The influence of these structural changes to the luminescence properties of the nanostructure are investigated by PL measure-ments.
Controlled Growth and Properties of InAs Nanostructures Invited International conference

Itaru Kamiya, Ronel Christian Intal ROCA

International Conference on Solid State Devices and Materials ( Online ) 2020.9

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Presentation type：Oral presentation (invited, special)
AFM Study of the 2D to 3D Transition in InAs Submonolayer Structures International conference

Ronel Christian Intal ROCA, Itaru Kamiya

JSAP Autumn Meeting 2020 ( Online Virtual ) 2020.9 JSAP

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Presentation type：Oral presentation (general)

The submonolayer (SML) growth mode has been attracting attention as an alternative to the well-known Stranski-Krastanov (SK) growth mode as a method of assembling InAs nanostructures, e.g. quantum dots (QDs), on GaAs by MBE. While the 2D to 3D transition in SK-growth has been well investigated with a critical thickness of ~1.7 ML, different conditions are employed for SML-growth. Here, atomic force microscopy (AFM) is utilized to study the topographical changes at the 2D to 3D transition in InAs SML nanostructures.
A Study on Submonolayer InAs Quantum Well Islands for Upconversion Applications International conference

Ronel Christian Intal ROCA, Itaru Kamiya

JSAP Spring Meeting 2020 ( Sophia University ) 2020.3 JSAP

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Presentation type：Oral presentation (general)

Deemed
Novel InAs SK/SML/SK quantum dot structures and steps toward new broadband IR detectors International conference

モハンマディ　ハニフ **, Ronel Christian Intal ROCA, Itaru Kamiya

JSAP Spring Meeting 2020 ( 上智大学（見做し開催） ) 2020.3 応用物理学会

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Presentation type：Oral presentation (general)

GaAs(001)上に、SML法とSK法でIn(Ga)As量子ドットを作製し、成長条件の適正化により、幅広い波長範囲を持った近赤外蛍光体の実現を目指している経過を報告。
Size Optimmization of InAs Quantum Well Islands for Photon Upconversion Applications International conference

Ronel Christian Intal ROCA, Itaru Kamiya

JSAP Autumn Meeting 2019 ( Hokkaido University ) 2019.9 JSAP

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Presentation type：Oral presentation (general)
Pregrowth Treatment Induced below-bandgap states in GaAs International conference

Ronel Christian Intal ROCA, Itaru Kamiya

International Conference on Solid State Devices and Materials ( Nagoya University, Nagoya, Japan ) 2019.9 AIP

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Presentation type：Oral presentation (general)

Below-bandgap states induced by pre-epitaxial growth treatments in GaAs have been investigated by photoluminescence (PL). Various electronic states giving rise to near-infrared (NIR) PL peaks are generated through processes such as annealing or buffer growth that are standard for epitaxial growth of InAlGaAs structures on (001) GaAs substrates. These states often overlap with those from InGaAs structures, not only complicating the interpretation by also altering the electronic properties of the devices. The present work provides guides for distinguishing the desired electronic states from the pregrowth treatment-induced defect states.
Below-bandgap photoluminescence from GaAs International conference

Ronel Christian Intal ROCA, Itaru Kamiya

Compound Semiconductor Week 2019 ( Kusagano International Forum, Nara, Japan ) 2019.5 IEEE

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Presentation type：Oral presentation (general)

Below-bandgap photoluminescence (PL) from GaAs has been investigated. We find that various electronic states giving rise to near-infrared (NIR) PL peaks can be generated through processes that are standard for epitaxial growth of InAlGaAs structures on (001) GaAs substrates. The PL signals from these states overlap with those from InAs quantum dots, wetting layers, and InGaAs structures, complicating the design of devices for telecommunications or intermediate band solar cells. The present result provides guides for distinguishing the desired electronic states from the thermal treatment-induced defect states.
Below-Bandgap Photoluminescence Emission from SI GaAs substrates subjected to pre-MBE-growth annealing International conference

Ronel Christian Intal ROCA, 神谷　格

2019年第66回応用物理学会春季学術講演会 (JSAP Spring Meeting 2019) ( 東京工業大学大岡山キャンパス ) 2019.3 応用物理学会 (JSAP)

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Presentation type：Oral presentation (general)

We report the observation of below-GaAs-bandgap photoluminescence (PL) emission from GaAs substrates subjected to thermal annealing during the standard pre-MBE-growth processes. Using below-bandgap excitation as well as backside PL measurements, defects deep within the substrates were probed. A broad PL emission peak at 1000 nm appear after pre-bake annealing at 300° and further defects at 905 and 1150 nm appear after oxide desorption annealing at 600°. These findings confirm the presence of optically-active defects in pre-MBE-growth annealed GaAs substrates.

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Awards

Toyota Scholarship Fund Research Encouragement Award

2022.3 Toyota Scholarship Fund

Ronel Christian Intal ROCA

Grant-in-Aid for Scientific Research

Towards spin quantum bits based on 3D submonolayer quantum dots Principal investigator

Grant number：23K13626 若手研究 2023 ～ 2024

Roca Ronel・Christian・Intal