Updated on 2025/04/22

写真a

 
Ronel Christian Intal ROCA
 
Organization
Graduate School of Engineering Department of Advanced Science and Technology Materials Science and Engineering Quantum Interface Laboratory Assistant Professor   
Degree
Doctor of Engineer （ 2017.9   Tokyo Institute of Technology ）
Homepage
https://www.linkedin.com/in/ronel-christian-roca-4807a926/
External link
Contact information
メールアドレス

Research Areas

  • Natural Science / Semiconductors, optical properties of condensed matter and atomic physics

  • Natural Science / Magnetism, superconductivity and strongly correlated systems

  • Nanotechnology/Materials / Optical engineering and photon science

  • Nanotechnology/Materials / Nanostructural physics

  • Nanotechnology/Materials / Crystal engineering

Main research papers

Research History

  • Toyota Technological Institute   Assistant Professor   Assistant Professor

    2021.12

  • Toyota Technological Institute   Post Doctoral Fellow   Postdoctoral Research Fellow

    2018.6 - 2021.5

    　 More details

    Country：Japan

  • Tokyo Institute of Technology   Institute of Innovative Research   Project Researcher   Research Staff

    2017.10 - 2018.5

    　 More details

    Country：Japan

Education

  • Tokyo Institute of Technology   Electronics and Applied Physics   Doctor of Engineering

    2014.10 - 2017.9

    　 More details

    Country： Japan

  • University of the Philippines Diliman   National Institute of Physics   Master of Science (Physics)

    2008.6 - 2010.5

    　 More details

    Country： Philippines

  • University of the Philippines Diliman   National Institute of Physics   Bachelor of Science in Physics

    2003.6 - 2008.4

    　 More details

    Country： Philippines

Professional Memberships

  • JSAP

    2015.1

Research theme

  • Towards deterministic fabrication of QD single-photon sources for quantum information applications

    Ronel　Christian　Intal　ROCA

    2025 - 2027

    　More details

    To purpose is to investigate the deterministic fabrication of single-photon sources based on epitaxial quantum dots.

  • Towards spin quantum bits based on 3D submonolayer quantum dots

    Ronel　Christian　Intal　ROCA

    2023 - 2025

    　More details

    The research plan includes 3 parts. Part 1 involves the purchase of supplies and initial assembly and modification of the optical setup. Once the setup is completed, initial spin measurements will be done using existing 3D SML QD samples. This part will take about 3~6 months. Part 2 involves additional optimization of the optical setup, including the realization of smaller spot size in order to measure individual 3D SML QDs. This part will take about 3~6 months. Part 3 will be optimization of the 3D SML QD samples. This will require several sample growths (rest of the project duration).

    Outcome：

    2023
    We were able successfully develop a optical setup that allows for spin injection and detection of samples. Initial results have been presented at the SPIE photonics west 2024 conference.

  • 2D to 3D growth transition of Submonolayer InAs/GaAs nanostructures

    Ronel　Christian　Intal　ROCA

    2020

    　More details

    Submonolayer (SML) deposition by MBE is a method that was proposed to assembled InAs nanostructure while maintaining 2D (layer-by-layer) growth. However, it has recently been shown that under certain growth conditions, a transition from 2D to 3D growth regime occurs during SML growth. This process is interesting for both fundamental physics and potential applications.

    Outcome：

    2023
    We were able to investigate various factors that affect the 2D to 3D transition during SML growth. Some of the results have been presented in the JSAP Autumn Meeting 2023.

  • Passivation-capping of III-V semiconductor quantum structures by oxides

    神谷　格, Ronel　Christian　Intal　ROCA, 岩田　直高

    2017

Papers

  • Probing the 2D to 3D growth transition dynamics in InAs/GaAs stacked submonolayer (SML) deposition by photoluminescence Reviewed

    Ronel Christian I. Roca and Itaru Kamiya

    Proc. SPIE   13376 ( 133760W )   2025.3

    　More details

    Authorship：Lead author,　Corresponding author   Publishing type：Research paper (international conference proceedings)  

    DOI： https://doi.org/10.1117/12.3042767

  • Electrical and structural properties of ArF excimer laser activation of Mg-doped GaN small area mesa device Reviewed

    Maria Emma Villamin, Ronel Christian Roca, Itaru Kamiya, and Naotaka Iwata

    Optical Engineering   63 ( 9 )   096101   2024.9

    　More details

    Language：English   Publishing type：Research paper (scientific journal)   Publisher：SPIE  

    DOI： https://doi.org/10.1117/1.OE.63.9.096101

  • Optical spin injection and detection in submonolayer InAs/GaAs nanostructures by circularly polarized photoluminescence Reviewed

    Ronel Christian I. Roca and Itaru Kamiya

    Journal of Nanophotonics   18 ( 036001 )   2024.7

    　More details

    Authorship：Lead author,　Corresponding author   Language：English   Publishing type：Research paper (scientific journal)   Publisher：SPIE  

    DOI： https://doi.org/10.1117/1.JNP.18.036001

  • Optical spin injection and detection in submonolayer InAs/GaAs nanostructures Reviewed

    Ronel Christian I. Roca, Itaru Kamiya

    Proc. SPIE   12874 ( 1287409 )   2024.3

    　More details

    Authorship：Lead author   Language：English   Publishing type：Research paper (international conference proceedings)   Publisher：SPIE  

    DOI： https://doi.org/10.1117/12.3002062

  • ArF excimer laser activation of Mg-doped GaN small area mesa device Reviewed

    Maria Emma Villamin, Ronel Christian Roca, Itaru Kamiya, Naotaka Iwata

    Proc. SPIE   12886 ( 128860F )   2024.3

    　More details

    Publishing type：Research paper (international conference proceedings)   Publisher：SPIE  

    DOI： https://doi.org/10.1117/12.3002082

  • Atomic layer deposition of diethylzinc/zinc oxide on InAs surface quantum dots: Self-clean-up and passivation processes Reviewed

    Hanif Mohammadi*, Ronel Christian Intal ROCA, Yuwei Zhang*, Hyunju Lee*, Yoshio Ohshita, Naotaka Iwata, Itaru Kamiya

    Applied Surface Science   612   155790   2022.11

    　More details

    Publishing type：Research paper (scientific journal)   Publisher：Elsevier  

  • Anomalous photoluminescence of InAs surface quantum dots: intensity enhancement and strain control by underlying quantum dots Reviewed

    Hanif Mohammadi*, Ronel Christian Intal ROCA, Itaru Kamiya

    Nanotechnology   33   415204   2022.7

    　More details

    Publishing type：Research paper (scientific journal)   Publisher：IOP  

  • Effect of the number of stacks on the 2D to 3D transition of stacked submonolayer (SML) InAs nanostructures Reviewed

    Ronel Christian Intal ROCA, Itaru Kamiya

    J. Crryst. Growth   593   126770   2022.6

    　More details

    Authorship：Lead author   Publishing type：Research paper (scientific journal)   Publisher：Elsevier  

  • Structural investigation of the 2D to 3D transition in stacked submonolayer InAs nanostructures Reviewed

    Ronel Christian Intal ROCA, Itaru Kamiya

    AIP Advances   11   075011   2021.7

    　More details

    Authorship：Lead author   Publishing type：Research paper (scientific journal)   Publisher：AIP  

  • Photoluminescence tuning of stacked submonolayer (SML) InAs nanostructures across the 2D to 3D transition Reviewed

    Ronel Christian Intal ROCA, Itaru Kamiya

    Applied Physics Letters   118   183104   2021.5

    　More details

    Authorship：Lead author   Publishing type：Research paper (scientific journal)   Publisher：AIP  

  • Submonolayer stacking growth of In(Ga)As nanostructures for optoelectronic applications: an alternative for Stranski-Krastanov growth Reviewed

    Itaru Kamiya, Ronel Christian Intal ROCA

    Japanese Journal of Applied Physics   60   SB0804   2021.4

    　More details

    Authorship：Last author   Publishing type：Research paper (scientific journal)   Publisher：JSAP  

  • Correlation between the structure and luminescence of InAs submonolayer stacked nanostructures Reviewed

    Ronel Christian Intal ROCA, Itaru Kamiya

    Japanese Journal of Applied Physics   60   SBBH06   2021.1

    　More details

    Authorship：Lead author   Publishing type：Research paper (scientific journal)   Publisher：IOP  

  • Change in Topography of InAs Submonolayer Nanostructures at the 2D to 3D Transition Reviewed

    Ronel Christian Intal ROCA, Itaru Kamiya

    Physica Status Solidi B   258   2000349   2020.12

    　More details

    Authorship：Lead author   Publishing type：Research paper (scientific journal)   Publisher：Wiley-VHC  

  • Photoluminescence of pre-growth treatment induced below-bandgap states in GaAs Reviewed

    Ronel Christian Intal ROCA, Itaru Kamiya

    Japanese Journal of Applied Physics   59   SGGK07   2020.2 （   ISSN:1347-4065 ）

    　More details

    Authorship：Lead author   Publishing type：Research paper (scientific journal)   Publisher：AIP  

  • Below-Bandgap Photoluminescence from GaAs Reviewed

    Ronel Christian Intal ROCA, Itaru Kamiya

    Physica Status Solidi B   257   1900391   2019.12 （   ISSN:1521-3951 ）

    　More details

    Authorship：Lead author   Publishing type：Research paper (scientific journal)   Publisher：Wiley-VHC  

  • Below-bandgap photoluminescence from GaAs substrates induced by pre-MBE-growth treatments Reviewed

    Ronel Christian Intal ROCA, Itaru Kamiya

    AIP Advances   9   075208   2019.7 （   ISSN:2158-3226 ）

    　More details

    Authorship：Lead author   Publishing type：Research paper (scientific journal)   Publisher：AIP  

▼display all

Presentations

  • Optimization of InAs/GaAs Stacked Submonolayer Nanostructures for Spin-optics

    Ronel Christian I. Roca, Itaru Kamiya

    72nd JSAP Spring Meeting 2025  ( Tokyo University of Science Noda Campus, Japan )   2025.3 

    　More details

    Presentation type：Poster presentation  

  • Probing the 2D to 3D growth transition dynamics in InAs/GaAs stacked submonolayer deposition by photoluminescence International conference

    Ronel Christian I. Roca, Itaru Kamiya

    SPIE Photonics West 2025  ( Moscone Center, San Francisco, California )   2025.1 

    　More details

    Presentation type：Poster presentation  

  • Control of Structural and Optical Properties of InAs/GaAs Submonolayer Nanostructures by GaAs Spacer Thickness International conference

    Ronel Christian I. Roca, Itaru Kamiya

    International Conference on MBE 2024  ( Kunibiki Messe, Matsue, Japan )   2024.9 

    　More details

    Presentation type：Oral presentation (general)  

  • Carrier dynamics in 2D and 3D SML nanostructures by power-dependent PL

    Ronel Christian I. Roca, Itaru Kamiya

    JSAP Autumn Meeting 2024  ( Toki Messe, Niigata, Japan )   2024.9 

    　More details

    Presentation type：Poster presentation  

  • Low Density 3D InAs/GaAs Submonolayer Nanostructures for Quantum Information Applications International conference

    Ronel Christian I. Roca, Itaru Kamiya

    Compound Semiconductor Week (CSW) 2024  ( Lund University, Sweden )   2024.6 

    　More details

    Presentation type：Poster presentation  

  • Spin optics in SML InAs/GaAs nanostructures by circularly-polarized PL

    Ronel Intal Roca, Itaru Kamiya

    71st JSAP Spring Meeting 2024  ( Tokyo City University Setagaya Campus, Tokyo, Japan )   2024.3 

    　More details

    Presentation type：Poster presentation  

  • Optical spin injection and detection in submonolayer InAs/GaAs nanostructures International conference

    Ronel Christian I. Roca, Itaru Kamiya

    SPIE Photonics West 2024  ( Moscone Center, San Francisco, California )   2024.1 

    　More details

    Presentation type：Oral presentation (general)  

  • Effect of Low As Flux Annealing to the 2D-3D Transition of SML Nanostructures

    Ronel Intal Roca, Itaru Kamiya

    84th JSAP Autumn Meeting 2023  ( Kumamoto-jo Hall, Kumamoto, Japan )   2023.9 

    　More details

    Presentation type：Poster presentation  

  • Photoluminescence Evolution of Submonolayer Nanostructures at the 2D-3D Transition International conference

    Ronel Christian Intal ROCA, Itaru Kamiya

    The 70th JSAP Spring Meeting 2023  ( 東北大学 )   2023.3  JSAP

    　More details

    Presentation type：Oral presentation (general)  

  • Diethylzinc passivation of InAs surface quantum dots International conference

    Hanif Mohammadi*, Ronel Christian Intal ROCA, Hyunju Lee*, 岩田　直高, 大下　祥雄, 神谷　格

    2023年春季第70回応用物理学関係連合講演会  ( 上智大学 )   2023.3  応用物理学会

    　More details

    Presentation type：Oral presentation (general)  

    ALDにおいて、ジエチル亜鉛を用いたInAs量子ドットのパッシベーション効果に関する報告。

  • Control of the 3D SML Nanostructure Density by Topmost InAs Cycle Amount International conference

    Ronel Christian Intal ROCA, Itaru Kamiya

    International Conference on Solid State Devices and Materials (SSDM) 2022  ( 名古屋 )   2022.9 

    　More details

    Presentation type：Oral presentation (general)  

  • InAs量子ドット/GaAs(001) 上GaAsキャッピングのAs fluxの影響 International conference

    若原夏希*, Ronel Christian Intal ROCA, 神谷　格

    2022年第83回応用物理学会秋季学術講演会  ( 東北大学川内北キャンパス（オンライン） )   2022.9  応用物理学会

    　More details

    Presentation type：Oral presentation (general)  

    MBEによるGaAs(001)上のInAs量子ドットの GaAs によるキャッピング中のAs流量等の影響に関する報告。

  • Control of the 3D Submonolayer (SML) Nanostructure Density by GaAs Spacer Thickness International conference

    Ronel Christian Intal ROCA, Itaru Kamiya

    The 83rd JSAP Autumn Meeting 2022  ( 東北大学 )   2022.9  JSAP

    　More details

    Presentation type：Oral presentation (general)  

  • サブモノレイヤー成長法によるInAs量子ドットの密度制御 International conference

    平墳直*, Ronel Christian Intal ROCA, 神谷　格

    2022年第83回応用物理学会秋季学術講演会  ( 東北大学川内北キャンパス（オンライン） )   2022.9  応用物理学会

    　More details

    Presentation type：Oral presentation (general)  

    MBEによるサブモノレイヤー積層法を用いたInAs/GaAsの成長における積層変調を用いた量子ドット密度の制御に関する報告。

  • PL enhancement of InAs surface quantum dots by ex situ DEZ/ZnO passivation capping International conference

    Hanif Mohammadi*, Ronel Christian Intal ROCA, Yuwei Zhang*, Hyunju Lee*, 岩田　直高, 大下　祥雄, 神谷　格

    2022年第83回応用物理学会秋季学術講演会  ( 東北大学川内北キャンパス（オンライン） )   2022.9  応用物理学会

    　More details

    Presentation type：Oral presentation (general)  

    ALD法によるDEZを用いたInAs量子ドットのパッシベーション被覆によるPL発光強度の増強に関する報告。

  • サブモノレイヤー成長法におけるGaAs膜厚による量子構造制御 International conference

    奥泉陽斗*, Ronel Christian Intal ROCA, 神谷　格

    春季第69回応用物理学関係連合講演会  ( 青山学院大学相模原キャンパス（Zoom） )   2022.3  応用物理学会

    　More details

    Presentation type：Oral presentation (general)  

    MBE で InAs/GaAs 交互積層するサブモノレイヤー成長法を用いて量子構造を作製する際の、GaAs 層の膜厚による構造制御の結果を報告した。

  • Luminescence of 10-stack Submonolayer InAs Nanostructures at the 2D-3D Transition International conference

    Ronel Christian Intal ROCA, Itaru Kamiya

    69th JSAP Spring Meeting 2022  ( オンライン )   2022.3  JSAP

    　More details

    Presentation type：Oral presentation (general)  

  • Photoluminescence enhancement of InAs surface quantum dots by Al2O3 passivation International conference

    Hanif Mohammadi*, Ronel Christian Intal ROCA, Yuwei Zhang*, Hyunji Lee*, 大下　祥雄, 岩田　直高, 神谷　格

    春季第69回応用物理学関係連合講演会  ( 青山学院大学相模原キャンパス )   2022.3  応用物理学会

    　More details

    Presentation type：Oral presentation (general)  

    Photoluminescence enhancement of InAs surface quantum dots by Al2O3 passivation using atomic layer deposition was reported.

  • Post-Growth Annealing of Stacked Submonolayer (SML) InAs Nanostructures International conference

    Ronel Christian Intal ROCA, Itaru Kamiya

    82nd JSAP Autumn Meeting 2021  ( Online Virtual (Nagoya, Japan) )   2021.9  JSAP

    　More details

    Presentation type：Oral presentation (general)  

  • GaAs(001)上InAs量子ドットのGaAsキャップ成長初期過程 International conference

    若原夏希*, Ronel Christian Intal ROCA, 神谷　格

    第82回応用物理学会秋季学術講演会  ( 名城大学（Zoom） )   2021.9  応用物理学会

    　More details

    Presentation type：Oral presentation (general)  

    GaAs(001)上にMBEで成長されるInAs量子ドットについて、GaAsで被覆する際の初期過程で相互拡散や歪による形状変化と電子物性を検討した結果を報告した。

  • Long wavelength PL of InAs surface quantum dots enhanced by underlying reservoirs International conference

    Hanif Mohammadi*, Ronel Christian Intal ROCA, 神谷　格

    第82回応用物理学会秋季学術講演会  ( 名城大学（Zoom） )   2021.9  応用物理学会

    　More details

    Presentation type：Oral presentation (general)  

    The influence of underlying quantum dots (QDs) on InAs surface quantum dots (SQDs) on their photoluminescence (PL) properties were discussed. The insertion of underlying QDs resulted in enhancement of the PL intensity, and the wavelength was shown to be controlled by the spacer layer thickness.

  • Effect of the Number of Stacks on the 2D to 3D Transition of Stacked Submonolayer (SML) InAs Nanostructures International conference

    Ronel Christian Intal ROCA, Itaru Kamiya

    21st International Conference on MBE (ICMBE) 2021  ( Virtual (Puerto Vallarta, Mexico) )   2021.9 

    　More details

    Presentation type：Oral presentation (general)  

  • Control of the 2D to 3D Transition of Stacked Submonolayer (SML) InAs Nanostructures by As2 Flux International conference

    Ronel Christian Intal ROCA, Itaru Kamiya

    Compound Semiconductor Week 2021  ( Online Virtual (Stockholm, Sweden) )   2021.5 

    　More details

    Presentation type：Oral presentation (general)  

  • Control of Density of 3D Stacked Submonolayer (SML) InAs Nanostructures by As2 Flux International conference

    Ronel Christian Intal ROCA, Itaru Kamiya

    JSAP Spring Meeting 2021  ( Online Virtual )   2021.3  JSAP

    　More details

    Presentation type：Oral presentation (general)  

    Stacked submonolayer (SML) growth of InAs nanostructures by MBE has been gaining interest recently for various optoelectronic applications. In contrast to the well-known Stranski-Krastanov (SK) growth of InAs nanostructures, stacked SML growth involves the cycled deposition of SML-thick InAs and few ML-thick GaAs. We have recently reported evidence of the 2D to 3D transition in SML InAs nanostructures. This transition leads to the existence of two distinct kinds of stacked SML nanostructures: 2D islands and 3D structures. Compared to the analogous transition in SK growth, the properties of the stacked SML transition is not yet well investigated. Hence, this study aims to elucidate the controllability of the density of 3D structures by As2 flux. It will be demonstrated that a wide control of 3D structure density (10^8 ~ 10^10 cm^-2) is possible simply by adjusting the As2 flux in stacked SML growth.

  • Correlation between Structure and Luminescence of InAs Submonolayer (SML) Nanostructures International conference

    Ronel Christian Intal ROCA, Itaru Kamiya

    International Conference on Solid State Devices and Materials (SSDM) 2020  ( Online Virtual )   2020.9  JSAP

    　More details

    Presentation type：Oral presentation (general)  

    The correlation between the structural and photo-luminescence (PL) properties of InAs submonolayer (SML) nanostructures at the 2D to 3D transition is in-vestigated. Significant changes in the topography of uncapped InAs nanostructures assembled by SML growth have been observed, indicating the transition from 2D to 3D growth regime. The influence of these structural changes to the luminescence properties of the nanostructure are investigated by PL measure-ments.

  • Controlled Growth and Properties of InAs Nanostructures Invited International conference

    Itaru Kamiya, Ronel Christian Intal ROCA

    International Conference on Solid State Devices and Materials  ( Online )   2020.9 

    　More details

    Presentation type：Oral presentation (invited, special)  

  • AFM Study of the 2D to 3D Transition in InAs Submonolayer Structures International conference

    Ronel Christian Intal ROCA, Itaru Kamiya

    JSAP Autumn Meeting 2020  ( Online Virtual )   2020.9  JSAP

    　More details

    Presentation type：Oral presentation (general)  

    The submonolayer (SML) growth mode has been attracting attention as an alternative to the well-known Stranski-Krastanov (SK) growth mode as a method of assembling InAs nanostructures, e.g. quantum dots (QDs), on GaAs by MBE. While the 2D to 3D transition in SK-growth has been well investigated with a critical thickness of ~1.7 ML, different conditions are employed for SML-growth. Here, atomic force microscopy (AFM) is utilized to study the topographical changes at the 2D to 3D transition in InAs SML nanostructures.

  • A Study on Submonolayer InAs Quantum Well Islands for Upconversion Applications International conference

    Ronel Christian Intal ROCA, Itaru Kamiya

    JSAP Spring Meeting 2020  ( Sophia University )   2020.3  JSAP

    　More details

    Presentation type：Oral presentation (general)  

    Deemed

  • Novel InAs SK/SML/SK quantum dot structures and steps toward new broadband IR detectors International conference

    モハンマディ　ハニフ **, Ronel Christian Intal ROCA, Itaru Kamiya

    JSAP Spring Meeting 2020  ( 上智大学（見做し開催） )   2020.3  応用物理学会

    　More details

    Presentation type：Oral presentation (general)  

    GaAs(001)上に、SML法とSK法でIn(Ga)As量子ドットを作製し、成長条件の適正化により、幅広い波長範囲を持った近赤外蛍光体の実現を目指している経過を報告。

  • Size Optimmization of InAs Quantum Well Islands for Photon Upconversion Applications International conference

    Ronel Christian Intal ROCA, Itaru Kamiya

    JSAP Autumn Meeting 2019  ( Hokkaido University )   2019.9  JSAP

    　More details

    Presentation type：Oral presentation (general)  

  • Pregrowth Treatment Induced below-bandgap states in GaAs International conference

    Ronel Christian Intal ROCA, Itaru Kamiya

    International Conference on Solid State Devices and Materials  ( Nagoya University, Nagoya, Japan )   2019.9  AIP

    　More details

    Presentation type：Oral presentation (general)  

    Below-bandgap states induced by pre-epitaxial growth treatments in GaAs have been investigated by photoluminescence (PL). Various electronic states giving rise to near-infrared (NIR) PL peaks are generated through processes such as annealing or buffer growth that are standard for epitaxial growth of InAlGaAs structures on (001) GaAs substrates. These states often overlap with those from InGaAs structures, not only complicating the interpretation by also altering the electronic properties of the devices. The present work provides guides for distinguishing the desired electronic states from the pregrowth treatment-induced defect states.

  • Below-bandgap photoluminescence from GaAs International conference

    Ronel Christian Intal ROCA, Itaru Kamiya

    Compound Semiconductor Week 2019  ( Kusagano International Forum, Nara, Japan )   2019.5  IEEE

    　More details

    Presentation type：Oral presentation (general)  

    Below-bandgap photoluminescence (PL) from GaAs has been investigated. We find that various electronic states giving rise to near-infrared (NIR) PL peaks can be generated through processes that are standard for epitaxial growth of InAlGaAs structures on (001) GaAs substrates. The PL signals from these states overlap with those from InAs quantum dots, wetting layers, and InGaAs structures, complicating the design of devices for telecommunications or intermediate band solar cells. The present result provides guides for distinguishing the desired electronic states from the thermal treatment-induced defect states.

  • Below-Bandgap Photoluminescence Emission from SI GaAs substrates subjected to pre-MBE-growth annealing International conference

    Ronel Christian Intal ROCA, 神谷　格

    2019年 第66回応用物理学会春季学術講演会 (JSAP Spring Meeting 2019)  ( 東京工業大学大岡山キャンパス )   2019.3  応用物理学会 (JSAP)

    　More details

    Presentation type：Oral presentation (general)  

    We report the observation of below-GaAs-bandgap photoluminescence (PL) emission from GaAs substrates subjected to thermal annealing during the standard pre-MBE-growth processes. Using below-bandgap excitation as well as backside PL measurements, defects deep within the substrates were probed. A broad PL emission peak at 1000 nm appear after pre-bake annealing at 300° and further defects at 905 and 1150 nm appear after oxide desorption annealing at 600°. These findings confirm the presence of optically-active defects in pre-MBE-growth annealed GaAs substrates.

▼display all

Awards

  • Toyota Scholarship Fund Research Encouragement Award

    2022.3   Toyota Scholarship Fund  

    Ronel Christian Intal ROCA

Grant-in-Aid for Scientific Research