2025/07/11 更新

写真a

ナカノ ヨシアキ
中野 義昭
Yoshiaki Nakano
学位
博士 ( 1987年3月   東京大学 )
外部リンク

研究分野

  • ものづくり技術(機械・電気電子・化学工学) / 電気電子材料工学

  • ものづくり技術(機械・電気電子・化学工学) / 電子デバイス、電子機器

  • ナノテク・材料 / 結晶工学

  • ナノテク・材料 / 応用物性

  • ナノテク・材料 / 光工学、光量子科学

経歴

  • 豊田工業大学   副学長

    2025年4月 - 現在

  • 東京大学   名誉教授

    2025年6月 - 現在

  • 豊田工業大学   教授

    2025年4月 - 現在

  • 豊田工業大学   客員教授

    2024年4月 - 2025年3月

  • 東京大学   大学院工学系研究科   教授

    2013年4月 - 2025年3月

  • 東京大学   先端科学技術研究センター   所長

    2010年4月 - 2013年3月

  • 東京大学   先端科学技術研究センター   教授

    2002年4月 - 2013年3月

  • 東京大学   大学院工学系研究科   教授

    2000年10月 - 2002年3月

▼全件表示

所属学協会

  • レーザー学会

    2023年4月 - 現在

  • 日本太陽光発電学会

    2020年4月 - 現在

  • 電気学会

    2007年1月 - 現在

  • OSA (OPTICA)

    1999年8月 - 現在

  • エレクトロニクス実装学会

    1995年12月 - 現在

  • 応用物理学会

    1982年10月 - 現在

  • 電子情報通信学会

    1982年5月 - 現在

  • IEEE

    1980年 - 現在

▼全件表示

論文

  • Comprehensive voltage-loss analysis and reduction of radiative recombination voltage loss in quantum-structured solar cells 査読

    Meita Asami, Maui Hino, Gan Li, Kentaroh Watanabe, Yoshiaki Nakano, Masakazu Sugiyama

    Solar Energy Materials and Solar Cells   273   2024年8月 (   ISSN:0927-0248 )

     詳細

    掲載種別:研究論文(学術雑誌)  

    Voltage-loss analysis is essential in the development of next-generation solar cells, such as perovskite, chalcopyrite, kesterite, and nano/quantum-structured solar cells. Voltage-loss analysis provides valuable insights into how the energy conversion efficiency of solar cells can be enhanced. However, a comprehensive and accurate method to evaluate the voltage loss in quantum-structured solar cells is lacking. This study establishes and demonstrates a quantitative voltage-loss analysis based on detailed balance theory. This analysis reveals the relationship between external quantum efficiency and radiative recombination voltage loss in quantum-structured solar cells. Based on the results of the analysis, we designed and fabricated a novel low-voltage loss quantum-structured solar cell. Radiative recombination in the quantum-structured solar cell was successfully suppressed by steepening the absorption edge. This voltage-loss analysis facilitates the development of next-generation solar cells.

    DOI: 10.1016/j.solmat.2024.112957

  • Boosting quantum-structured solar cell light absorption through compressively strained superlattices 査読

    Meita Asami, Kentaroh Watanabe, Yoshiaki Nakano, Masakazu Sugiyama

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   63 ( 7 )   2024年7月 (   ISSN:0021-4922   eISSN:1347-4065 )

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    掲載種別:研究論文(学術雑誌)  

    The escalating demand for improved energy conversion efficiency in vehicular applications of solar cells underscores the need for innovative solutions. This study focuses on enhancing the current density of GaAs middle cells within conventional Ge-based triple-junction solar cells to realize unprecedented levels of energy conversion efficiency. We introduced a novel superlattice configuration termed a compressively strained superlattice (CSSL) and demonstrated its integration into a p-i-n junction GaAs solar cell, achieving a current density increase of 1.03 mA cm−2 over conventional GaAs solar cells. Prior investigations have explored a strain-balanced superlattice (SBSL) to enhance GaAs middle cell current density. However, our findings establish the superiority of the CSSL over the SBSL in terms of current density improvement, with the CSSL featuring 1.59 times more quantum wells per unit length than the SBSL. This increase in quantum well quantity significantly enhances light absorption efficiency and consequently, the current density.

    DOI: 10.35848/1347-4065/ad5b32

  • Scalable Multi-Core Dual-Polarization Coherent Receiver Using a Metasurface Optical Hybrid 査読

    Kento Komatsu, Go Soma, Shota Ishimura, Hidenori Takahashi, Takehiro Tsuritani, Masatoshi Suzuki, Yoshiaki Nakano, Takuo Tanemura

    Journal of Lightwave Technology   42 ( 11 )   4013 - 4022   2024年6月 (   ISSN:0733-8724   eISSN:1558-2213 )

     詳細

    掲載種別:研究論文(学術雑誌)  

    The space-division multiplexed (SDM) coherent transmission using a multi-core fiber (MCF) is a promising technology for further increasing the capacity of optical communications and interconnects. For broader application of SDM systems, dual-polarization (DP) coherent receivers that can be directly coupled to MCFs without bulky fan-in/fan-out (FIFO) devices and polarization beam splitters (PBSs) are desirable. Unlike intensity-modulation direct-detection (IMDD) receivers, however, scaling a DP coherent receiver to multiple spatial channels in a compact form factor is not straightforward. Here, we propose and demonstrate a compact and scalable surface-normal multi-core DP coherent receiver using an ultrathin dielectric metasurface (MS). The MS is composed of silicon nanoposts on quartz, which are judiciously designed to function as the DP optical hybrids and focusing lenses for all spatial channels. Using the fabricated device, simultaneous homodyne detection of DP 64-ary quadrature-amplitude-modulation signals from a four-core fiber is demonstrated with an error vector magnitude of less than 3% for all spatial/polarization channels from 1530 to 1570 nm. The demonstrated receiver can be assembled into a compact module to enable low-cost SDM coherent receivers without bulky PBS and FIFO devices.

    DOI: 10.1109/JLT.2024.3374336

  • Lower-depth programmable linear optical processors 査読

    Rui Tang, Ryota Tanomura, Takuo Tanemura, Yoshiaki Nakano

    Physical Review Applied   21 ( 1 )   2024年1月 (     eISSN:2331-7019 )

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:American Physical Society (APS)  

    DOI: 10.1103/physrevapplied.21.014054

    その他リンク: http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.21.014054/fulltext

  • Metasurface-based Coherent Receiver Insensitive to LO Polarization 査読

    Kento Komatsu, Shota Ishimura, Chun Ren, Go Soma, Hidenori Takahashi, Takehiro Tsuritani, Masatoshi Suzuki, Yoshiaki Nakano, Takuo Tanemura

    2024 Optical Fiber Communications Conference and Exhibition, OFC 2024 - Proceedings   2024年 ( ISBN:9781957171326 )

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    掲載種別:研究論文(国際会議プロシーディングス)  

    A dual-polarization (DP) coherent receiver which is insensitive to local oscillator (LO) polarization is proposed and experimentally demonstrated using a single metasurface and five photodetectors. Self-coherent 50-GBd DP-QPSK transmission is accomplished with arbitrary LO polarizations.

  • Demonstration of Error-Tolerant Integrated Optical Processors Based on Multi-Plane Light Conversion 査読

    Ryota Tanomura, Rui Tang, Takuo Tanemura, Yoshiaki Nakano

    IEEE Photonics Technology Letters   35 ( 23 )   1275 - 1278   2023年12月 (   ISSN:1041-1135   eISSN:1941-0174 )

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:Institute of Electrical and Electronics Engineers (IEEE)  

    DOI: 10.1109/lpt.2023.3315781

  • High-speed metasurface modulator using perfectly absorptive bimodal plasmonic resonance 査読

    Jiaqi Zhang, Yuji Kosugi, Makoto Ogasawara, Koto Ariu, Akira Otomo, Toshiki Yamada, Yoshiaki Nakano, Takuo Tanemura

    APL Photonics   8 ( 12 )   2023年12月 (     eISSN:2378-0967 )

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:AIP Publishing  

    Free-space electro-optic (EO) modulators operating at gigahertz and beyond are attractive for a wide range of emerging applications, including high-speed imaging, free-space optical communication, microwave photonics, and diffractive computing. Here, we experimentally demonstrate a high-speed plasmonic metasurface EO modulator operating in a near-infrared wavelength range with a gigahertz modulation bandwidth. To achieve efficient intensity modulation of reflected light from an ultrathin metasurface layer, we utilize the bimodal plasmonic resonance inside a subwavelength metal–insulator–metal grating, which is precisely tuned to satisfy the critical coupling condition. As a result, perfect absorption of −27 dB (99.8%) and a high quality (Q) factor of 113 are obtained at a resonant wavelength of 1650 nm. By incorporating an EO polymer inside the grating, we achieve a modulation depth of up to 9.5 dB under an applied voltage of ±30 V. The 3-dB modulation bandwidth is confirmed to be 1.25 GHz, which is primarily limited by the undesired contact resistance and the output impedance of the driver. Owing to the high electrical conductivity of metallic gratings and a compact device structure with a minimal parasitic capacitance, the demonstrated device can potentially operate at several tens of gigahertz, which opens up exciting opportunities for ultrahigh-speed active metasurface devices in various applications.

    DOI: 10.1063/5.0173216

  • Silicon Photonic Multi-Wavelength Coherent Receiver Using Local Oscillator Optical Frequency Comb 査読

    Shuntaro Maeda, Taichiro Fukui, Takuya Okimoto, Go Soma, Takuo Tanemura, Yoshiaki Nakano

    2023 International Conference on Photonics in Switching and Computing (PSC)   1 - 3   2023年9月

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    掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    DOI: 10.1109/psc57974.2023.10297153

  • Improvement of InGaP solar cells grown with TBP in planetary MOVPE reactor 査読

    Hassanet Sodabanlu, Gan Li, Kentaroh Watanabe, Yoshiaki Nakano, Masakazu Sugiyama

    Solar Energy Materials and Solar Cells   257   2023年8月 (   ISSN:0927-0248 )

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    掲載種別:研究論文(学術雑誌)  

    In this study, the impact of various growth parameters, such as wafer temperature, device structures, and substrate misorientation, on the quality of InGaP epitaxial layers and solar cells grown in a planetary MOVPE reactor using TBP as a P source were investigated and optimized. Results showed that the carrier lifetime in unintentionally n-doped InGaP significantly decreased as the growth temperature increased from 560 to 590 °C. At temperatures above 600 °C, the growth of InGaP was unsuccessful due to extremely rough surface morphology. The study revealed that InGaP rear homojunction and rear heterojunction solar cells using n-type InGaP base layers displayed improved photo-carrier collection and performance compared to traditional front junction solar cells with p-type InGaP base layers. Notably, InGaP grown on GaAs (001) with a 5° miscut towards (111)A was found to have better quality, while InGaP grown on GaAs (001) with a 6° tilt towards (111)B had worse results in terms of carrier lifetime, PL intensity, and solar cell performance.

    DOI: 10.1016/j.solmat.2023.112402

  • All-Optical MIMO Demultiplexing Using Silicon-Photonic Dual-Polarization Optical Unitary Processor 査読

    Ryota Tanomura, Rui Tang, Go Soma, Shota Ishimura, Takuo Tanemura, Yoshiaki Nakano

    Journal of Lightwave Technology   41 ( 12 )   3791 - 3796   2023年6月 (   ISSN:0733-8724   eISSN:1558-2213 )

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:Institute of Electrical and Electronics Engineers (IEEE)  

    DOI: 10.1109/jlt.2023.3276003

  • Al<inf>0.35</inf>Ga<inf>0.65</inf>As/InGaP heterojunction solar cell based on temperature-graded growth 査読

    Gan Li, Hassanet Sodabanlu, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano

    Japanese Journal of Applied Physics   62 ( 6 )   2023年6月 (   ISSN:0021-4922   eISSN:1347-4065 )

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    掲載種別:研究論文(学術雑誌)  

    The p-Al0.35Ga0.65As/n-InGaP heterojunction solar cells are promising competitors compared with conventional InGaP or AlGaAs solar cells as the heterogeneous combination can overcome the demerits of each material. However, InGaP has an optimized growth temperature much lower than that of AlGaAs in metal-organic vapor phase epitaxy (MOVPE) growth. Therefore, a challenge arises from oxygen contamination at the hetero-interface during temperature adjustment for obtaining MOVPE-grown high-quality p-AlGaAs/n-InGaP heterojunction. Here we report that a temperature-graded layer (TGL) of AlGaAs can solve the issue of growth temperature mismatch, and significantly improve the voltage performance of AlGaAs/InGaP solar cells. Absolute electroluminescence measurement and atomic force microscopy confirmed a smooth interface with less non-radiative recombination after TGL was applied. The temperature-graded growth is verified able to improve the AlGaAs/InGaP interface quality and provides a scalable method for AlGaAs-based heterogeneous growth.

    DOI: 10.35848/1347-4065/acd9b8

  • Compact and scalable polarimetric self-coherent receiver using a dielectric metasurface 査読

    Go Soma, Yoshiro Nomoto, Toshimasa Umezawa, Yuki Yoshida, Yoshiaki Nakano, Takuo Tanemura

    Optica   10 ( 5 )   604 - 604   2023年5月 (     eISSN:2334-2536 )

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:Optica Publishing Group  

    Polarimetric self-coherent systems using direct-detection-based Stokes-vector receivers (SVRs) are a promising technology to meet both the cost and capacity requirements of short-reach optical interconnects. However, conventional SVRs require a number of optical components to detect the state of polarization at high speed, resulting in substantially more complicated receiver configurations compared with the current intensity-modulation–direct-detection counterparts. Here, we demonstrate a simple and compact polarimetric self-coherent receiver based on a thin dielectric metasurface and a photodetector array (PDA). With a single 1.05-µm-thick metasurface device fabricated on a compact silicon-on-quartz chip, we implement functionalities of all the necessary passive components, including a 1×3 splitter, three polarization beam splitters with different polarization bases, and six focusing lenses. Combined with a high-speed PDA, we demonstrate self-coherent transmission of 20-GBd 16-ary quadrature amplitude modulation and 50-GBd quadrature phase-shift keying signals over a 25-km single-mode fiber. Owing to the surface-normal configuration, it can easily be scaled to receive spatially multiplexed channels from a multicore fiber or a fiber bundle, enabling compact and low-cost receiver modules for future highly parallelized self-coherent systems.

    DOI: 10.1364/optica.484318

  • Effect of layer structure of AlN interlayer on the strain in GaN layers during metal-organic vapor phase epitaxy on Si substrates 査読

    Momoko Deura, Takuya Nakahara, Wan Chi Lee, Takeshi Momose, Yoshiaki Nakano, Masakazu Sugiyama, Yukihiro Shimogaki

    Journal of Applied Physics   133 ( 16 )   2023年4月 (   ISSN:0021-8979   eISSN:1089-7550 )

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    掲載種別:研究論文(学術雑誌)  

    It is highly challenging to grow high-quality gallium nitride (GaN) layers on silicon (Si) substrates due to the intrinsic mismatching of their structural and thermal properties. Aluminum nitride (AlN) interlayers have been used to induce a compressive strain to GaN layers during growth, which compensates for the tensile strain in these layers on Si substrates during cooling. In this study, we investigated the effect of the growth temperature and layer structure of the AlN interlayer to understand the relationship between surface flatness and relaxation ratio of the AlN interlayer and the compressive strain in the overlying GaN layer. Low-temperature (LT) growth enhanced lattice relaxation of the AlN interlayer, whereas the AlN surface was atomically flat at high temperature (HT). We also examined a two-step growth to combine the advantages of LT- and HT-AlN. This approach resulted in a surface with multiple flat regions separated by grooves, which had the largest compressive strain in the overlying GaN layer at the early stages of growth. At later stages, the strain was the largest on the HT-AlN interlayer. In both cases, the experimentally measured compressive strain exceeded simulated predictions. Finally, possible solutions for inducing a larger compressive strain in the GaN layer using interlayers were discussed.

    DOI: 10.1063/5.0143985

  • Compact Surface-Normal Coherent Receiver with Wire-Grid Polarizers 査読

    Go Soma, Warakorn Yanwachirakul, Toshiki Miyazaki, Eisaku Kato, Bunta Onodera, Ryota Tanomura, Taichiro Fukui, Shota Ishimura, Masakazu Sugiyama, Yoshiaki Nakano, Takuo Tanemura

    2023 Conference on Lasers and Electro-Optics, CLEO 2023   2023年 ( ISBN:9781957171258 )

     詳細

    掲載種別:研究論文(国際会議プロシーディングス)  

    We present a broadband and compact coherent receiver in a surface-normal configuration using wire-grid polarizers. Demodulation of 64-Gbaud QPSK and 50-Gbaud 16QAM signals as well as ultra-wideband operation covering 1260-1630 wavelength bands are demonstrated experimentally.

  • Current Enhancement of Ultrathin GaAs Solar Cells with Rear Light Scattering Structures Using Block Copolymers 査読

    Ryoya Tsuchida, Kentaroh Watanabe, Meita Asami, Yoshiaki Nakano, Masakazu Sugiyama

    Physica Status Solidi (A) Applications and Materials Science   221 ( 13 )   2023年 (   ISSN:1862-6300   eISSN:1862-6319 )

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    掲載種別:研究論文(学術雑誌)  

    Ultrathin GaAs solar cells have gained attention because they are cost-effective and exhibit high carrier-collection efficiency and open-circuit voltage compared with cells with thicker absorber layers. However, ultrathin GaAs solar cells have a low current density due to their thin light-absorbing layers. To improve the photoabsorption of ultrathin GaAs solar cells, light-trapping structures with textured front or rear surfaces are necessary, and easy methods for fabricating textured structures are required. In this study, a new method to create light-scattering textured surfaces using block copolymers is developed. This method only requires spin coating, annealing, and wet etching, making it easily applicable to large-area devices such as solar cells. An ultrathin GaAs solar cell is fabricated with a rear-textured structure using block copolymers as masks for wet etching. The results demonstrate that the short-circuit current density is enhanced by 1.39 mA cm−2, which improves the energy conversion efficiency by 0.71 percentage points compared with a reference cell without a rear-textured structure.

    DOI: 10.1002/pssa.202300586

  • Compact Surface-Normal Coherent Receiver with Wire-Grid Polarizers 査読

    Go Soma, Warakorn Yanwachirakul, Toshiki Miyazaki, Eisaku Kato, Bunta Onodera, Ryota Tanomura, Taichiro Fukui, Shota Ishimura, Masakazu Sugiyama, Yoshiaki Nakano, Takuo Tanemura

    CLEO: Science and Innovations, CLEO:S and I 2023   2023年 ( ISBN:9781957171258 )

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    掲載種別:研究論文(国際会議プロシーディングス)  

    We present a broadband and compact coherent receiver in a surface-normal configuration using wire-grid polarizers. Demodulation of 64-Gbaud QPSK and 50-Gbaud 16QAM signals as well as ultra-wideband operation covering 1260-1630 wavelength bands are demonstrated experimentally.

    DOI: 10.1364/CLEO_AT.2023.SM4I.3

  • FIFO-free 4-core Dual-polarization Optical Hybrid Using a Single Dielectric Metasurface 査読

    Kento Komatsu, Go Soma, Shota Ishimura, Hidenori Takahashi, Takehiro Tsuritani, Masatoshi Suzuki, Yoshiaki Nakano, Takuo Tanemura

    IET Conference Proceedings   2023 ( 34 )   1638 - 1641   2023年 ( ISBN:9781837240241     eISSN:2732-4494 )

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    掲載種別:研究論文(国際会議プロシーディングス)  

    Spatially scalable metasurface-based optical hybrid for dual-polarization (DP) multi-core coherent receiver is proposed and experimentally demonstrated. Simultaneous homodyne detection and demodulation of DP-64QAM signals from a 4-core fiber are achieved with an error vector magnitude of 2.3% for all spatial/polarization channels at 1550 nm.

    DOI: 10.1049/icp.2023.2655

  • Low-Temperature Photoluminescence Investigation of Carbon-Doped AlGaAs Grown by MOVPE on Vicinal Substrates 査読

    Gan Li, Hassanet Sodabanlu, Maui Hino, Meita Asami, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano

    Physica Status Solidi (A) Applications and Materials Science   221 ( 13 )   2023年 (   ISSN:1862-6300   eISSN:1862-6319 )

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    掲載種別:研究論文(学術雑誌)  

    AlGaAs is promising absorber material for multi-junction solar cells (MJSC) for its tunable bandgap to match various bandgap combination designs. However, the path to achieving high-quality AlGaAs for solar cell application remains to be determined. In this study, we grow and characterize carbon-doped p-Al0.375Ga0.625As on exact and vicinal GaAs(0 0 1) substrates, using metal-organic vapor phase epitaxy (MOVPE). Low-temperature photoluminescence (PL) measurement is performed in the range from 6 K to 300 K. The Arrhenius plot of PL intensities reveals an increasing trend for non-radiative recombination in conjunction with increasing miscut angle. The presence of atomic ordering that inversely correlates to the miscut angle is proposed to explain the PL linewidth and peak energy dependency on substrate orientation. The conflicting tendency of non-radiative recombination and ordering with miscut angle are further validated using solar cell devices. A slightly vicinal substrate is recommended for AlGaAs solar cells according to our observation.

    DOI: 10.1002/pssa.202300529

  • Numerical Investigation on Non-Radiative Recombination in InGaAs Front and Rear Hetero-Junction Solar Cell 査読

    Depu Ma, Hassanet Sodabanlu, Gan Li, Meita Asami, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano

    Conference Record of the IEEE Photovoltaic Specialists Conference   2023年 ( ISBN:9781665460590   ISSN:0160-8371 )

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    掲載種別:研究論文(国際会議プロシーディングス)  

    Front hetero-junction (FHJ) and rear hetero-junction (RHJ) InGaAs solar cells were grown by metal-organic vapor phase epitaxy (MOVPE). Compared with RHJ solar cell, FHJ InGaAs solar cell shows a better short circuit current density (Jsc), but a worse open circuit voltage (Voc). Based on simulation results, non-radiative recombination in FHJ and RHJ InGaAs solar cells has been compared. FHJ has a better carrier diffusion length, but greater carrier loss at the interface resulted to worse Voc. RHJ has a less carrier loss in the interface but worse carrier diffusion length resulted to worse Jsc.

    DOI: 10.1109/PVSC48320.2023.10359579

  • InGaP Solar Cell with InGaP Multiple Quantum Wells Grown under Optimized V/III Ratio 査読

    Maui Hino, Meita Asami, Kentaroh Watanabe, Yoshiaki Nakano, Masakazu Sugiyama

    Physica Status Solidi (A) Applications and Materials Science   221 ( 13 )   2023年 (   ISSN:1862-6300   eISSN:1862-6319 )

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    掲載種別:研究論文(学術雑誌)  

    Indium gallium phosphide (InGaP) solar cells are widely used as top subcells in multi-junction solar cells, however, there are large open-circuit voltage (VOC) losses in InGaP solar cells. Improving the radiative efficiency by inserting an InGaP multiple quantum well (MQW) into the InGaP solar cell structure is a promising approach to enhancing the VOC of InGaP solar cells, but such InGaP MQW solar cells are not demonstrated. Moreover, the critical parameters, such as the V/III ratio for an InGaP MQW, are not investigated. This study investigates the optimal V/III ratio for enhancing the radiative efficiency of an InGaP MQW. Doublehetero structures are fabricated, comprising a 330 nm core layer with 55 periods of an InGaP MQW grown under varying V/III ratios. The InGaP MQW grown under V/III = 62 gives the highest photoluminescence intensity among all InGaP structures. An InGaP MQW solar cell grown at V/III = 62 exhibits a 2 mV VOC loss suppression compared with an InGaP bulk solar cell. Therefore, an InGaP MQW grown under proper growth conditions contributes to enhance the energy conversion efficiency of InGaP solar cells. This study provides relevant insights into InGaP MQW crystal growth and the performance improvement in InGaP solar cells.

    DOI: 10.1002/pssa.202300660

  • InGaP/GaAs/In<inf>0.35</inf>Ga<inf>0.65</inf>As//In<inf>0.53</inf>Ga<inf>0.47</inf>As Four-Junction Solar Cells Integrated by Surface Activated Wafer Bonding 査読

    Kentaroh Watanabe, Takashi Shimasaki, Hassanet Sodabanlu, Yoshiaki Nakano, Masakazu Sugiyama

    Conference Record of the IEEE Photovoltaic Specialists Conference   2023年 ( ISBN:9781665460590   ISSN:0160-8371 )

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    掲載種別:研究論文(国際会議プロシーディングス)  

    The four-junction solar cell was fabricated by surface activated wafer bonding (SAB) method with the inverted metamorphic (IMM) triple-junction InGaP/GaAs/In0.35Ga0.65As integrated on the In0.53Ga0.47As single junction cell. Applying the direct integrated p+-AlGaAs/n+-InGaAs tunnel junction at the bonding interface, electrically connected 4-junction solar cell improved the open-circuit voltage Voc = 3.24 V was realized. The current density at the maximum power point was restricted by photocurrent in the In0.53Ga0.47As 4th subcell compared with 11 mA/cm2 of short-circuit current density (Jsc) expected for the IMM-3J under the AM1.5G illumination.

    DOI: 10.1109/PVSC48320.2023.10359831

  • Investigations on Absorber Type and Junction Position of GaAs Solar Cells 査読

    Gan Li, Hassanet Sodabanlu, Meita Asami, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano

    Conference Record of the IEEE Photovoltaic Specialists Conference   2023年 ( ISBN:9781665460590   ISSN:0160-8371 )

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    掲載種別:研究論文(国際会議プロシーディングス)  

    This paper presents a study comparing GaAs solar cells with different structures grown by metal-organic vapor phase epitaxy (MOVPE). The impacts of absorber type and junction position are individually analyzed regarding the solar cell performance. When using the same structures, the n-type absorber samples had enhanced open-circuit voltage (Voc) and radiative efficiency than the p-type absorber ones, indicating superior crystal quality of n-GaAs. Besides, when using the same type of absorber, front-junction (FJ) samples showed an all-around boosted performance than rear-junction (RJ) ones, refreshing our understanding of the role of RHJ structure. Based on these observations, a p-on-n FJ structure using an n-GaAs absorber is recommended for high-performance solar cells.

    DOI: 10.1109/PVSC48320.2023.10360070

  • Silicon photonic optical phased array with integrated phase monitors 査読

    Shun TAKAHASHI, Taichiro FUKUI, Ryota TANOMURA, Kento KOMATSU, Yoshitaka TAGUCHI, Yasuyuki OZEKI, Yoshiaki NAKANO, Takuo TANEMURA

    IEICE Transactions on Electronics   2023年 (   ISSN:0916-8524   eISSN:1745-1353 )

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:Institute of Electronics, Information and Communications Engineers (IEICE)  

    DOI: 10.1587/transele.2022ocp0003

  • Surface-Normal Dual-Polarization Coherent Receiver Using Dielectric Metasurface 査読

    Kento Komatsu, Go Soma, Keigo Mizukami, Shota Ishimura, Hidenori Takahashi, Masatoshi Suzuki, Yoshiaki Nakano, Takuo Tanemura

    CLEO 2023   SM4G.1 - SM4G.1   2023年

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    掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:Optica Publishing Group  

    Spatially scalable surface-incidence dual-polarization (DP) coherent receiver with a dielectric metasurface and photodetector array is proposed. The designed metasurface is fabricated on a silicon-on-quartz chip to demonstrate ideal wave-mixing functionalities required for DP coherent detection.

    DOI: 10.1364/cleo_si.2023.sm4g.1

  • Refining Photothermal Deflection Spectroscopy: Incorporating Reflectance for Enhanced Accuracy in Light-Absorption Measurements 査読

    Meita Asami, Henner Kampwerth, Michael Pollard, Xiaojing Hao, Shintaro Komaba, Tetsuo Ikari, Atsuhiko Fukuyama, Kentaroh Watanabe, Yoshiaki Nakano, Masakazu Sugiyama

    Physica Status Solidi (A) Applications and Materials Science   221 ( 13 )   2023年 (   ISSN:1862-6300   eISSN:1862-6319 )

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    掲載種別:研究論文(学術雑誌)  

    A method for measuring light absorption using photothermal deflection spectroscopy (PDS) is investigated. Typical reflectance and transmittance (R & T) absorption measurements have low spectral resolution (SR) with standard setups. It is believed that absorption measurements using PDS solve this problem because of its high sensitivity, even at a high SR. However, accurate absorption measurements have not been obtained using conventional PDS. The reflectance of the sample must be considered in the absorptance calculations. Various absorption measurement methods are compared and a novel calculation method for accurate PDS absorption measurements is proposed. A sample with quantum structures is fabricated and PDS measurements are performed. Exciton absorption peaks are also observed. The high SR of PDS is demonstrated and the measured exciton absorption peaks are confirmed using piezoelectric photothermal measurements. Furthermore, it is confirmed that the absolute values of absorptance derived from the R & T and PDS measurements agree well. The new PDS absorption measurement technique enables to obtain accurate absorption characteristics, which are indispensable for designing and optimizing optoelectronic devices.

    DOI: 10.1002/pssa.202300585

  • Comparative analysis of speckle-based single-pixel imaging using uniform and non-redundant optical phased arrays 査読

    Taichiro Fukui, Kento Komatsu, Yoshiaki Nakano, Takuo Tanemura

    Journal of the Optical Society of America A   39 ( 12 )   2325 - 2325   2022年12月 (   ISSN:1084-7529   eISSN:1520-8532 )

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:Optica Publishing Group  

    An optical phased array (OPA) is a compact high-speed wavefront modulation device that is promising for next-generation optical sensing systems. In particular, speckle-based single-pixel imaging (SSPI) using OPA is an attractive scheme since precise tuning of optical phases is unnecessary. In this work, we present a comprehensive analysis of SSPI using an OPA with phase shifters by comparing two classes of OPAs: uniformly spaced OPA (UOPA) and non-redundant OPA (NROPA). Through singular value decomposition analysis of the illumination patterns generated from the OPA, we clarify the theoretical limit of the imaging resolution for each case. As a result, the number of resolvable points can be as large as for the case of NROPA. This is in clear contrast to the case of UOPA, where the number of resolvable points can only be as large as . Finally, imaging results of a test target are compared to study the impact of the array layout in OPA-based SSPI. Our work provides theoretical understanding of OPA-based SSPI and reveals the effectiveness of SSPI using NROPA.

    DOI: 10.1364/josaa.476683

  • Comparison of Various Voltage Metrics for the Evaluation of the Nonradiative Voltage Loss in Quantum-Structure Solar Cells 査読

    Meita Asami, Kentaroh Watanabe, Riko Yokota, Yoshiaki Nakano, Masakazu Sugiyama

    IEEE JOURNAL OF PHOTOVOLTAICS   2022年12月 (   ISSN:2156-3381   eISSN:2156-3403 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC  

    There are several methods for the evaluation of the performance of solar cells through the voltage loss. However, the advantages and disadvantages of each method have not been thoroughly discussed nor elucidated. This study compares these various methods to clarify their advantages and disadvantages. The bandgap offset W-OC has been used for the evaluation of the voltage loss. However, it was found that such approach gives inaccurate assessment of the voltage loss in thin-bulk and quantum-structure solar cells. Our study discusses the reasons for such inaccuracy and proves that we can accurately evaluate the nonradiative voltage loss in quantum-structure solar cells using the optoelectronic reciprocity theorem and detailed-balance theory. Our findings enable a fair, accurate, and accessible evaluation of the nonradiative voltage loss in solar cells which facilitates the development of high-efficiency quantum-structure solar cell.

    DOI: 10.1109/JPHOTOV.2022.3229186

  • Ultra-Broadband Surface-Normal Coherent Optical Receiver with Nanometallic Polarizers 査読

    Go Soma, Warakorn Yanwachirakul, Toshiki Miyazaki, Eisaku Kato, Bunta Onodera, Ryota Tanomura, Taichiro Fukui, Shota Ishimura, Masakazu Sugiyama, Yoshiaki Nakano, Takuo Tanemura

    ACS Photonics   2022年7月 (   ISSN:2330-4022   eISSN:2330-4022 )

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:American Chemical Society (ACS)  

    DOI: 10.1021/acsphotonics.2c00759

  • Dimerized Plasmonic-Organic Grating for High-Speed Metasurface Modulator 査読

    Hiroki Miyano, Taichiro Fukui, Go Soma, Akira Otomo, Takuo Tanemura, Yoshiaki Nakano

    2022 27th OptoElectronics and Communications Conference (OECC) and 2022 International Conference on Photonics in Switching and Computing (PSC)   2022年7月

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    掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    DOI: 10.23919/oecc/psc53152.2022.9849960

  • Experimental Demonstration of TM-Mode Silicon High-Contrast Grating Modulator with Electro-Optic Polymer 査読

    Jiahao Liu, Yoshiro Nomoto, Akira Otomo, Taichiro Fukui, Yoshiaki Nakano, Takuo Tanemura

    2022 27th OptoElectronics and Communications Conference (OECC) and 2022 International Conference on Photonics in Switching and Computing (PSC)   1 - 3   2022年7月

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    掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    DOI: 10.23919/oecc/psc53152.2022.9850150

  • Proposal for a Highly Reliable In-Vehicle Optical Network: SiPhON (Si-Photonics-Based In-Vehicle Optical Network) 査読

    Hiroyuki Tsuda, Ryogo Kubo, Tatsuo Furuya, Masayuki Iwase, Masahito Morimoto, Hisashi Kondo, Yasushi Amamiya, Yoshiaki Nakano, Takuo Tanemura, Masayuki Murata, Shinichi Arakawa, Naokatsu Yamamoto, Atsushi Matsumoto, Ryo Takahashi

    2022 27th OptoElectronics and Communications Conference (OECC) and 2022 International Conference on Photonics in Switching and Computing (PSC)   2022年7月 ( ISBN:9784885523366 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    A highly reliable, broadband, in-vehicle optical network is proposed. The fragile laser diodes are placed only in the master and optical packets are transmitted between the master and slave nodes in a ring topology network.

    DOI: 10.23919/oecc/psc53152.2022.9849883

  • Scalability of Non-Redundant Optical Phased Array for Speckle-based Single-Pixel Imaging 査読

    Taichiro Fukui, Kento Komatsu, Yoshiaki Nakano, Takuo Tanemura

    2022 27th OptoElectronics and Communications Conference (OECC) and 2022 International Conference on Photonics in Switching and Computing (PSC)   1 - 3   2022年7月

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    掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    DOI: 10.23919/oecc/psc53152.2022.9850133

  • V-Groove-Assisted Polarization Splitter-Rotator on Multi-Micron Silicon Photonics 査読

    Yuto Suzuki, Abdulaziz E. Elfiqi, Taichiro Fukui, Maiko Ito, Takuo Tanemura, Yoshiaki Nakano

    2022 27th OptoElectronics and Communications Conference (OECC) and 2022 International Conference on Photonics in Switching and Computing (PSC)   1 - 3   2022年7月

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    掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    DOI: 10.23919/oecc/psc53152.2022.9850138

  • Enhanced Radiative Efficiency of InGaAs/GaAsP Multiple Quantum Wells by Optimizing the Thickness of Interlayers 査読

    Maui Hino, Meita Asami, Kentaroh Watanabe, Yoshiaki Nakano, Masakazu Sugiyama

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   219 ( 4 )   2022年2月 (   ISSN:1862-6300   eISSN:1862-6319 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:WILEY-V C H VERLAG GMBH  

    InGaAs/GaAsP multiple quantum wells (MQWs) are used in electronic devices because the high radiative efficiency of MQWs improves the device performance. To realize high radiative efficiency, a GaAs interlayer is inserted to decrease the defects at the heterointerface between the well and barrier of the MQWs. However, it is unclear how the interlayer thickness and insertion position affect the radiative efficiency of the MQWs. Herein, the influence of the GaAs interlayer thickness on the radiative efficiency by measuring the photoluminescence of MQWs with different interlayer thicknesses is investigated. A thicker GaAs interlayer below the InGaAs enhances the radiative efficiency. Moreover, the GaAs interlayer above the InGaAs must be thicker than approximate to 6 nm to enhance the radiative efficiency. The initial growth of GaAs above the InGaAs degrades the surface morphology, which may be associated with the carry-over of indium on the InGaAs surface and may generate defects between the InGaAs and GaAsP layers. The surface of sufficiently thick GaAs interlayers has a flatter morphology and is free from the degradation of radiative efficiency. The results suggest inserting of interlayers with a smooth surface morphology between strained layers during epitaxial growth is an effective method to suppress nonradiative recombination.

    DOI: 10.1002/pssa.202100426

  • Scalable and Robust Photonic Integrated Unitary Converter Based on Multiplane Light Conversion 査読

    Ryota Tanomura, Rui Tang, Toshikazu Umezaki, Go Soma, Takuo Tanemura, Yoshiaki Nakano

    PHYSICAL REVIEW APPLIED   17 ( 2 )   2022年2月 (   ISSN:2331-7019 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:AMER PHYSICAL SOC  

    An optical unitary converter (OUC) that can convert a set of N mutually orthogonal optical modes into another set of arbitrary N orthogonal modes is expected to be a key device in diverse applications, including optical communication, deep learning, and quantum computing. While various types of OUC have been demonstrated on photonic integration platforms, the sensitivity against a slight deviation in waveguide dimensions has been the crucial issue in scaling N. Here, we demonstrate that an OUC based on the concept of multiplane light conversion (MPLC) shows outstanding robustness against waveguide deviations. Moreover, it becomes more and more insensitive to fabrication errors as we increase N, which is in clear contrast to the conventional OUC architecture, composed of 2 x 2 Mach-Zehnder interferometers. The physical origin behind this unique robustness and scalability is studied by considering a generalized OUC configuration. As a result, we reveal that the number of coupled modes in each stage plays an essential role in determining the sensitivity of the entire OUC. The maximal robustness is attained when all-to-all-coupled interferometers are employed, which are naturally implemented in a MPLC-based OUC.

    DOI: 10.1103/PhysRevApplied.17.024071

    その他リンク: http://arxiv.org/pdf/2103.14782v1

  • Smooth Surface Morphology and Long Carrier Lifetime of InGaP Realized by Low-Temperature-Grown Cover Layer 査読

    Meita Asami, Kentaroh Watanabe, Yoshiaki Nakano, Masakazu Sugiyama

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   259 ( 2 )   2022年2月 (   ISSN:0370-1972   eISSN:1521-3951 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:WILEY-V C H VERLAG GMBH  

    The growth of high-crystal-quality GaAs on InGaP without sacrificing the carrier lifetime and shunt resistance of the InGaP layer is reported, utilizing a 10 nm-thick low-temperature-grown InGaP cover layer (LTGCL). Electronic devices with a GaAs/InGaP heterostructure such as solar cells, high-electron-mobility transistors (HEMTs), and lasers have attracted considerable attention because of their superior characteristics compared with conventional homostructure devices. However, the device performance has scope for improvement, particularly, the interface quality. To realize high-performance GaAs/InGaP heterostructure devices, high-crystal-quality GaAs needs to be grown on high-temperature-grown InGaP, which has a long carrier lifetime and high shunt resistance. High-temperature-grown InGaP, however, has a rough surface, which degrades the crystal quality of the overlying GaAs. To solve this problem, the use of high-temperature-grown InGaP with an LTGCL is proposed, which has an atomic-scale smooth surface. The advantages of using an LTGCL are discussed with a heterostructure solar cell as an example. The findings of this study indicate that the LTGCL can contribute to further improvement of the performance of heterostructure devices.

    DOI: 10.1002/pssb.202100305

  • Compact symmetric polarization rotator-splitter on InP 査読

    Maiko Ito, Taichiro Fukui, Takuo Tanemura, Yoshiaki Nakano

    Optics Express   30 ( 3 )   4179 - 4179   2022年1月 (     eISSN:1094-4087 )

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:Optica Publishing Group  

    Symmetric polarization rotator-splitter (PRS) is proposed and experimentally demonstrated on InP for the first time. Instead of integrating a mode-selective splitter, we employ a symmetric multimode-interference (MMI) splitter at the output of an adiabatic taper section to extract the linear superpositions of the transverse-electric (TE) and the transverse-magnetic (TM) components of the input signal. As a result, the entire device functions as a PRS with its basis on the S2-S3 plane of the Poincaré sphere, whereas we can fully eliminate complicated asymmetric structures that are challenging to fabricate on InP. Moreover, the adiabatic taper, which operates as a mode-evolution-based polarization converter, is designed judiciously to minimize the overall length. The designed InP PRS with a total length of 750 µm is fabricated by a simple single-etching process. A polarization extinction ratio of more than 16.3 dB and a polarization-dependent loss of 0.67 dB are demonstrated experimentally at a 1550-nm wavelength.

    DOI: 10.1364/oe.445358

  • Robust InP/InGaAsP Polarization Rotator Based on Mode Evolution 査読

    Abdulaziz E. Elfiqi, Ryota Tanomura, Dawei Yu, Warakorn Yanwachirakul, Haifeng Shao, Yuto Suzuki, Takuo Tanemura, Yoshiaki Nakano

    IEEE PHOTONICS TECHNOLOGY LETTERS   34 ( 2 )   109 - 112   2022年1月 (   ISSN:1041-1135   eISSN:1941-0174 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC  

    InP-based polarization manipulating devices are attracting continuous interest to realize compact polarization multiplexed transceivers with monolithically integrated active components. Here, we propose and experimentally demonstrate a novel type of monolithic InP polarization rotator (PR) based on a tapered half-ridge structure. Owing to the principle of mode-evolution-based adiabatic rotation of the polarization axis along propagation, the demonstrated device inherently exhibits excellent robustness against fabrication errors. Error-tolerant conversion with an efficiency over 97% is obtained experimentally across the entire C-band. With the simple self-aligned process and a thick InP upper cladding, the demonstrated device would be suitable for low-loss integration with other InP-based active waveguide components, such as lasers, amplifiers, and modulators.

    DOI: 10.1109/LPT.2022.3141518

  • 64-QAM Self-Coherent Transmission Using Symmetric Silicon Photonic Stokes-Vector Receiver 査読

    Shota Ishimura, Taichiro Fukui, Ryota Tanomura, Go Soma, Yoshiaki Nakano, Takuo Tanemura

    2022 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC)   2022年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    We propose a robust silicon photonic Stokes-vector receiver based on fully symmetric waveguides without a mode-selective directional coupler. By using a fabricated receiver, we experimentally demonstrate 30-Gb/s 64-QAM self-coherent transmission over a 25-km single-mode fiber. (C) 2022 The Author(s)

  • Integrated Optical Phased Array for High-Resolution Imaging 査読

    Takuo TANEMURA, Taichiro FUKUI, Kento KOMATSU, Yoshiaki NAKANO

    The Review of Laser Engineering   50 ( 8 )   463 - 463   2022年 (   ISSN:0387-0200   eISSN:1349-6603 )

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:Laser Society of Japan  

    DOI: 10.2184/lsj.50.8_463

  • Numerical Investigation of High-Speed Surface-Normal Modulator Using InP High-Contrast Grating 査読

    Taichiro Fukui, Kei Sumita, Mitsuru Takenaka, Shinichi Takagi, Yoshiaki Nakano, Takuo Tanemura

    Conference Digest - IEEE International Semiconductor Laser Conference   2022-October   2022年 ( ISBN:9784885523359   ISSN:0899-9406 )

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    掲載種別:研究論文(国際会議プロシーディングス)  

    We propose a surface-normal optical modulator using an InP high-contrast grating embedded with electro-optic polymer. The feasibility of broad-bandwidth (>40 GHz) and low-loss (<0.22 dB) modulation is numerically demonstrated, thanks to the high electron mobility and the small optical absorption of n- InP.

    DOI: 10.23919/ISLC52947.2022.9943427

  • Photonic Integrated Unitary Processor based on Multi-Plane Light Conversion 査読

    Takuo Tanemura, Rui Tang, Ryota Tanomura, Yoshiaki Nakano

    2022 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC)   2022年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    Recent progress of developing universal optical unitary processors (OUPs) based on the concept of multi-plane light conversion (MPLC) is reviewed. The inherent redundancy of MPLC provides unique scalability and excellent robustness against fabrication imperfectness, enabling large-scale OUPs integrated on silicon and InP platforms. (C) 2022 The Author(s)

  • Integrated InP optical unitary converter with compact half-integer multimode interferometers 査読

    Ryota Tanomura, Rui Tang, Takuo Tanemura, Yoshiaki Nakano

    OPTICS EXPRESS   29 ( 26 )   43414 - 43420   2021年12月 (   ISSN:1094-4087 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Optica Publishing Group  

    Integrated optical unitary converters (OUCs) are vital devices for various emerging applications such as mode-multiplexed optical communication, optical neural networks, and quantum computing. In order to realize large-scale OUCs in a limited footprint, the number of elements, as well as the size of each element, is important. In this work, we present a novel type of OUC using half-integer multimode interferometers (MMIs) based on the multi-plane light conversion (MPLC) concept. A half-integer MMI enables unitary coupling among the multiple input and output ports, while requiring only half the length of a conventional uniform MMI. Although the splitting ratio is not uniform across the ports, we show both numerically and experimentally that arbitrary unitary operation can still be achieved with comparable performance. We fabricate 4x4 OUC with half-integer MMIs on the monolithic InP platform and experimentally demonstrate reconfigurable 4-mode sorting and switching with a significantly reduced footprint compared with the conventional OUCs using uniform MMIs. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

    DOI: 10.1364/OE.443227

  • Comparative Study of H2O and O2 Adsorption on the GaN Surface 査読

    Masahiro Sato, Yuki Imazeki, Takahito Takeda, Masaki Kobayashi, Susumu Yamamoto, Iwao Matsuda, Jun Yoshinobu, Yoshiaki Nakano, Masakazu Sugiyama

    The Journal of Physical Chemistry C   125 ( 46 )   25807 - 25815   2021年11月 (   ISSN:1932-7447   eISSN:1932-7455 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:American Chemical Society ({ACS})  

    DOI: 10.1021/acs.jpcc.1c07110

  • Large-Scale Monolithic InP-Based Optical Phased Array 査読

    Kento Komatsu, Yusuke Kohno, Yoshiaki Nakano, Takuo Tanemura

    IEEE Photonics Technology Letters   33 ( 20 )   1123 - 1126   2021年10月 (   ISSN:1941-0174 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Institute of Electrical and Electronics Engineers Inc.  

    High-speed and robust optical beam-steering device will be the key component for various applications, such as LiDAR (light detection and ranging) and free-space optical communication. Optical phased arrays (OPAs) integrated on semiconductor chips have recently received increasing attention due to the high-speed operation, compactness, and low cost. In particular, indium phosphide (InP)-based OPAs are advantageous for high-output-power applications at 1.55- \\mu \\text{m} eye-safe wavelength, owing to their capability of monolithically integrating active components, such as high-power lasers and optical amplifiers. In this letter, we design and fabricate, to the best of our knowledge, the largest-scale InP-based OPA and experimentally demonstrate its beam-steering operations. The fabricated OPA consists of 100 waveguides with carrier-injection-based phase shifters, densely integrated on 7 mm \\times5 mm footprint. A focused beam width of 0.11° is steered across the free spectral range of 8.88°, corresponding to more than 80 resolvable points. This is the largest number of resolvable points obtained by a monolithic InP OPA. The response time of the OPA is confirmed to be less than 16 ns, which is limited by the driver circuit. This work paves the way for realizing compact beam-steering modules for high-speed and high-output-power imaging applications.

    DOI: 10.1109/LPT.2021.3107277

  • Impact of Laser Phase Noise on Self-Coherent Transceivers Employing High-Order QAM Formats 査読

    Shota Ishimura, Yoshiaki Nakano, Takuo Tanemura

    Journal of Lightwave Technology   39 ( 19 )   6150 - 6158   2021年10月 (   ISSN:1558-2213 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Institute of Electrical and Electronics Engineers Inc.  

    Recent studies have shown that the self-coherent systems, including the bi-directional, the Stokes-vector-modulation direct-detection (SVM-DD), and the Kramers-Kronig (KK) schemes, have the potential to reduce the cost of short-reach networks. One of the most attractive features of the self-coherent systems is that they may eliminate the necessity of a narrow-linewidth laser, which is mandatory in the conventional full coherent systems employing high-order quadrature-amplitude-modulation (QAM) formats. On the other hand, it is also recognized that the laser phase noise may have a significant impact on the system performance if there exists a large length mismatch between the signal and the CW tone in the transmission paths. In this paper, we analyze the impact of laser phase noise on the self-coherent systems numerically and experimentally by considering the bi-directional system as an example case. As a result, we show that the performance of the self-coherent system can be described efficiently by using a limited number of normalized parameters. We then reveal the existence of a distinctive threshold on the path length mismatch that influences the bit-error-rate (BER) performance
    the penalty increases in a stepwise manner as the length mismatch exceeds the threshold and converges to a constant value. Based on the results, we suggest the feasibility of employing high-order QAM formats to transmit &gt
    800 Gb/s signals per polarization using a 10-MHz-linewidth laser. Finally, proof-of-concept experimental results are presented to verify the theoretical and numerical analyses.

    DOI: 10.1109/JLT.2021.3097092

  • Single-Pixel Imaging Using Carrier-Depletion Optical Phased Array with Reduced Phase Shift Requirement 査読

    Samar Emara, Taichiro Fukui, Kento Komatsu, Yusuke Kohno, Rui Tang, Takuo Tanemura, Yoshiaki Nakano

    IEEE Photonics Journal   13 ( 5 )   2021年10月 (   ISSN:1943-0655 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Institute of Electrical and Electronics Engineers Inc.  

    The optical-phased array (OPA) has gained special interest in recent years as a high-speed and compact imaging device. While large-scale OPAs have been demonstrated in single-pixel imaging, the complexity of the driver circuit is becoming a crucial problem as the number of phase shifters increases. Here, we investigate the phase shift requirement of OPA for single-pixel imaging and demonstrate, for the first time, that full 2π phase shifts are not mandatory to generate a set of illumination patterns with a sufficient degree of randomness required to reconstruct the image. Using a silicon photonic OPA chip with 128 carrier-depletion-based phase shifters, we experimentally confirm this property by successfully retrieving an image under a maximum phase shift of only ∼1.5π without affecting the quality of the image. Consequently, the input voltage can be reduced significantly. Since the carrier-depletion phase shifters generally require high driving voltages, this finding paves the way to high-speed OPA-based imaging with a minimum device requirement.

    DOI: 10.1109/JPHOT.2021.3113925

  • Non-redundant optical phased array 査読

    Taichiro Fukui, Ryota Tanomura, Kento Komatsu, Daiji Yamashita, Shun Takahashi, Yoshiaki Nakano, Takuo Tanemura

    OPTICA   8 ( 10 )   1350 - 1358   2021年10月 (   ISSN:2334-2536 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:OPTICAL SOC AMER  

    Optical phased arrays (OPAs) are promising beam-steering devices for various applications such as light detection and ranging, optical projection, free-space optical communication, and optical switching. However, previously reported OPAs suffer from either an insufficient number of resolvable points, or complicated control requirements due to an extremely large number of phase shifters. To solve this issue, we introduce the non-redundant array (NRA) concept to the OPA devices. Based on this design, we can realize high-resolution OPAs whose number of resolvable points scales quadratically with the number of antennas N. In contrast, that of traditional OPAs scales only linearly with N. Thus, a significant reduction in the number of required phase shifters can be attained without sacrificing the number of resolvable points. We first investigate the impact of employing the NRA theoretically by considering the autocorrelation function of the array layout. We then develop a Costas-array-based silicon OPA and experimentally demonstrate 2D beam steering with similar to 19,000 resolvable points using only 127 phase shifters. To the best of our knowledge, this corresponds to the largest number of resolvable points achieved by an OPA without sweeping the wavelength. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

    DOI: 10.1364/OPTICA.437453

  • Mode-Evolution-based Symmetrical Polarization Splitter-Rotator on Monolithic InP Platform 査読

    Maiko Ito, Taichiro Fukui, Takuo Tanemura, Yoshiaki Nakano

    2021 European Conference on Optical Communication (ECOC)   1 - 3   2021年9月

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    掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    DOI: 10.1109/ecoc52684.2021.9606038

  • Ten-Port Unitary Optical Processor on a Silicon Photonic Chip 査読

    Rui Tang, Ryota Tanomura, Takuo Tanemura, Yoshiaki Nakano

    ACS Photonics   8 ( 7 )   2074 - 2080   2021年7月 (   ISSN:2330-4022   eISSN:2330-4022 )

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:American Chemical Society (ACS)  

    DOI: 10.1021/acsphotonics.1c00419

  • Optimization based on the condition number of the speckle patterns in single-pixel imaging using optical phased arrays 査読

    Samar Emara, Taichiro Fukui, Kento Komatsu, Yusuke Kohno, Takuo Tanemura, Yoshiaki Nakano

    Japanese Journal of Applied Physics   60 ( 7 )   2021年7月 (   ISSN:1347-4065 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IOP Publishing Ltd  

    Single-pixel imaging provides numerous advantages over the conventional pixelated-array imaging as it paved the way to operate at a wider range of wavelengths. Optical phased arrays (OPAs) have been recently used as fast and compact devices to generate the random illumination patterns required for this type of imaging. In this work, we investigate optimal tuning of these speckle patterns generated by an OPA for single-pixel imaging, and we employ the condition number of the illumination patterns matrix as a figure of merit for their evaluation. We show that the quality of the reconstructed image is greatly enhanced by minimizing the condition number of the illumination patterns matrix, which suppresses the effect of noise on the quality of the image.

    DOI: 10.35848/1347-4065/ac0cb9

  • Band bending of n-gan under ambient h2o vapor studied by X-ray photoelectron spectroscopy 査読

    Yuki Imazeki, Masahiro Sato, Takahito Takeda, Masaki Kobayashi, Susumu Yamamoto, Iwao Matsuda, Jun Yoshinobu, Masakazu Sugiyama, Yoshiaki Nakano

    Journal of Physical Chemistry C   125 ( 17 )   9011 - 9019   2021年5月 (   ISSN:1932-7447   eISSN:1932-7455 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:AMER CHEMICAL SOC  

    To improve the performance of semiconductor photoelectrodes for water splitting, the amount of band bending in the depletion layer of a semiconductor should be accurately ascertained, since it determines the splitting efficiency of photogenerated carriers. Band bending has been determined by X-ray photoelectron spectroscopy (XPS) from the valence band maximum (VBM), which has been calculated from the Ga 3d peak using the energy difference between VBM and Ga 3d (ΔEVBM-3d). This work validates several values for ΔEVBM-3d which have been reported previously, by analyzing the spectrum around the VBM and its distance from Ga 3d for the n-GaN(0001) surface under both ultrahigh vacuum (UHV) and ambient H2O. ΔEVBM-3d is estimated to be between 17.36 and 17.55 eV. By adopting 17.5 eV as ΔEVBM-3d, the amounts of band-bending were 0.5 eV under UHV and 0.1 eV under a relative humidity of 46%, respectively. For the latter condition, a surface photovoltage of 20 meV was observed upon Xe lamp irradiation, confirming the existence of band bending even with H2O adsorption on the surface. The origin of such band bending seems to be Fermi level pinning to the subsurface states which cannot be compensated by H2O.

    DOI: 10.1021/acs.jpcc.0c11174

  • Efficient InGaAsP MQW-based polarization controller without active-passive integration 査読

    Maiko Ito, Kosuke Okawa, Takahiro Suganuma, Taichiro Fukui, Eisaku Kato, Takuo Tanemura, Yoshiaki Nakano

    Optics Express   29 ( 7 )   10538 - 10545   2021年3月 (   ISSN:1094-4087 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:The Optical Society  

    Carrier-injection-based efficient polarization controller with a strained InGaAsP multiple-quantum-well (MQW) layer is demonstrated on a regrowth-free InP platform. We employ a straight-line device configuration by cascading an asymmetric polarization rotator (PR) to provide a fixed polarization conversion and a polarization-dependent phase shifter (PD-PS) to enable tunable polarization rotation. Based on a novel design concept, both the PR and PD-PS sections are integrated monolithically without active-passive integration. Using the fabricated device, we experimentally demonstrate efficient polarization conversion over the entire Poincaré sphere with a total current of less than 40 mA. With the capability of monolithically integrating other InP-based active components, the demonstrated scheme should be attractive for various applications, such-as low-cost coherent communication, microwave photonics, and quantum key distribution.

    DOI: 10.1364/OE.414387

  • Single-Pixel Imaging Using Multimode Fiber and Silicon Photonic Phased Array 査読

    Taichiro Fukui, Yusuke Kohno, Rui Tang, Yoshiaki Nakano, Takuo Tanemura

    Journal of Lightwave Technology   39 ( 3 )   839 - 844   2021年2月 (   ISSN:0733-8724   eISSN:1558-2213 )

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:Institute of Electrical and Electronics Engineers (IEEE)  

    DOI: 10.1109/jlt.2020.3008968

  • Integrated dual-polarization coherent receiver without a polarization splitter-rotator 査読

    Go Soma, Shota Ishimura, Ryota Tanomura, Taichiro Fukui, Maiko Ito, Yoshiaki Nakano, Takuo Tanemura

    OPTICS EXPRESS   29 ( 2 )   1711 - 1721   2021年1月 (   ISSN:1094-4087 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:OPTICAL SOC AMER  

    We propose and demonstrate a simple integrated dual-polarization (DP) coherent receiver that does not require a polarization splitter-rotator (PSR). Based on a novel concept, a DP coherent signal is mixed with the local-oscillator (LO) waves inside a single interferometer and detected by five single-ended photodetectors. The signal-signal and LO-LO beat noises are eliminated through differential detection. We design and fabricate a proof-of-concept device on InP and experimentally demonstrate complete retrieval of DP quadrature phase-shift keyed signals. Requiring minimal number of optical components without a PSR, the demonstrated scheme would be attractive particularly for the InP and thick-silicon photonic platforms due to its significantly reduced footprint and ease of fabrication. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

    DOI: 10.1364/OE.413310

  • Effect of limited phase shift on single-pixel imaging using carrier-depletion silicon photonic phased array 査読

    Samar Emara, Taichiro Fukui, Kento Komatsu, Yusuke Kohno, Takuo Tanemura, Yoshiaki Nakano

    Optics InfoBase Conference Papers   2021年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:The Optical Society  

    We experimentally demonstrate single-pixel imaging using a carrier-depletion silicon optical phased array and reveal that high-quality images can be obtained even with a limited phase shift. This tapers off the device requirement for high-speed imaging.

  • Integrated Optical Unitary Converter based on Nonuniform Multimode Interference Coupler 査読

    Ryota Tanomura, Rui Tang, Takuo Tanemura, Yoshiaki Nakano

    2021 ANNUAL CONFERENCE OF THE IEEE PHOTONICS SOCIETY (IPC)   2021年 (   ISSN:2374-0140 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    We fabricate and demonstrate a monolithic InP-based optical unitary converter (OUC) with nonuniform multimode interference (MMI) couplers. Reconfigurable 4-mode sorting is experimentally demonstrated with a significantly reduced footprint compared with the conventional OUCs using uniform MMI couplers.

    DOI: 10.1109/IPC48725.2021.9592993

  • Mode-Evolution-based InP/InGaAsP Polarization Rotator with Etching-Stop Layer 査読

    Ryota Tanomura, Abdulaziz E. Elfiqi, Dawei Yu, Warakorn Yanwachirakul, Haifeng Shao, Yuto Suzuki, Takuo Tanemura, Yoshiaki Nakano

    2021 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXPOSITION (OFC)   2021年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    We propose and experimentally demonstrate a monolithic InP/InGaAsP mode-evolution-based polarization rotator. Using the adiabatic mode transition inside a tapered half-ridge waveguide, fabrication-tolerant conversion with an efficiency over 97.7% is obtained over the entire C-band. (c) 2021 The Authors

  • Polarization-Splitter-Rotator-Free Dual-Polarization Coherent Receiver with a Single Optical Hybrid 査読

    Go Soma, Shota Ishimura, Ryota Tanomura, Taichiro Fukui, Maiko Ito, Yoshiaki Nakano, Takuo Tanemura

    2021 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)   2021年 (   ISSN:2160-9020 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    We propose and demonstrate a dual-polarization (DP) homodyne coherent receiver with a single optical hybrid without any polarization splitter-rotator. Using a proof-of-concept device fabricated on InP, DP quadrature phase-shift keying signal is retrieved successfully. (c) 2021TheAuthor(s)

  • Straight-line dual-polarization PSK transmitter with polarization differential modulation 査読

    Shota Ishimura, Kosuke Nishimura, Yoshiaki Nakano, Takuo Tanemura

    IEICE Transactions on Communications   1 ( 5 )   490 - 496   2021年 (   ISSN:1745-1345 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Institute of Electronics Information Communication Engineers  

    Coherent transceivers are now regarded as promising candidates for upgrading the current 400 Gigabit Ethernet (400GbE) transceivers to 800G. However, due to the complicated structure of a dual-polarization IQ modulator (DP-IQM) with its bulky polarization-beam splitter/comber (PBS/PBC), the increase in the transmitter size and cost is inevitable. In this paper, we propose a compact PBS/PBC-free transmitter structure with a straight-line configuration. By using the concept of polarization differential modulation, the proposed transmitter is capable of generating a DP phase-shift-keyed (DP-PSK) signal, which makes it directly applicable to the current coherent systems. A detailed analysis of the system performance reveals that the imperfect equalization and the bandwidth limitation at the receiver are the dominant penalty factors. Although such a penalty is usually unacceptable in long-haul applications, the proposed transmitter can be attractive due to its significant simplicity and compactness for short-reach applications, where the cost and the footprint are the primary concerns.

    DOI: 10.1587/TRANSCOM.2020EBP3124

  • Monolithic InP optical unitary converter based on multi-plane light conversion 査読

    Ryota Tanomura, Rui Tang, Takahiro Suganuma, Kosuke Okawa, Eisaku Kato, Takuo Tanemura, Yoshiaki Nakano

    Optics Express   28 ( 17 )   25392 - 25399   2020年8月 (     eISSN:1094-4087 )

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    掲載種別:研究論文(学術雑誌)  

    © 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement Integrated reconfigurable optical unitary converters (OUCs) are crucial in realizing all-optical spatial mode demultiplexing for mode-division-multiplexed transmission systems and programmable photonic processing for optical neural networks. In this work, we present the first experimental demonstration of 4×4 OUC monolithically integrated on InP. To avoid the difficulty of integrating a large number of Mach-Zehnder interferometer couplers on the InP platform, we apply the concept of multi-plane light conversion and use cascaded stages of 4-port multimode interference couplers, which are more scalable and easier to fabricate on InP. By optimizing the phase shifters, we demonstrate reconfigurable 4-mode sorting as well as error-free switching of 40-Gbit/s signal.

    DOI: 10.1364/OE.399366

  • Design of InGaAsP phase modulator with asymmetrically coupled quantum wells for efficient polarization modulation 査読

    Peng Zhou, Yoshiaki Nakano, Takuo Tanemura

    Japanese Journal of Applied Physics   59 ( 8 )   2020年8月 (   ISSN:0021-4922   eISSN:1347-4065 )

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    掲載種別:研究論文(学術雑誌)  

    © 2020 The Japan Society of Applied Physics. Monolithically integrated high-speed polarization modulators are finding emerging applications in the fields of optical communication, quantum key distribution, and radio-frequency photonics. Here, we design an efficient polarization modulator with InGaAsP asymmetrically coupled quantum wells (ACQWs) on InP. By using two quantum wells separated by a thin barrier layer, the behaviors of the heavy holes and the light holes can be controlled independently under an external bias. As a result, we can induce an anomalous quantum-confined Stark effect, having a strong polarization dependence. With an optimized ACQW design, we numerically demonstrate a large polarization-dependent refractive index modulation of 7.1 10-3 at an applied field of 1.8 V μm-1. Using a 1 mm long device, we estimate that 2π rotation of the Stokes vector can be achieved with negligible absorption at a driving voltage of only 0.75 V.

    DOI: 10.35848/1347-4065/aba3f7

  • A general design guideline for strain-balanced quantum-wells toward high-efficiency photovoltaics 査読

    Hsiang Hung Huang, Kasidit Toprasertpong, Amaury Delamarre, Matthew M. Wilkins, Masakazu Sugiyama, Yoshiaki Nakano

    Solar Energy   206   655 - 669   2020年8月 (   ISSN:0038-092X )

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    掲載種別:研究論文(学術雑誌)  

    © 2020 International Solar Energy Society Due to the tunable optical absorption threshold and several intriguing physical properties, multiple-quantum-well (MQW) structures have been playing a crucial role in achieving ultra-high efficiency in tandem photovoltaic cells and various optoelectronic technologies. However, devices incorporating such nano-structures suffer from poor perpendicular carrier transport, which hinders device performance. On the other hand, designing MQWs is challenging. Simultaneously optimizing the structural parameters and constituent materials suggests a high design complexity with a large parameter space. In this report, on the basis of the quantitative analysis on the degradation of carrier transport, we propose a general design guideline for MQWs by which the structures and constituent materials can both be optimized targeting at a particular absorption threshold. We firstly demonstrate our design flow by optimizing an InGaP/InGaP strain-balanced (SB) MQW at 1.91 eV to replace In0.49Ga0.51P bulk serving as the top cell of dual-MQW triple-junction solar cells. Secondly, we apply the design concept to a conventional InGaAs/GaAsP SBMQW targeting at 1.23 eV, which is significant for not only high-efficiency single-junction photovoltaics but also current-matched tandem cells. The results illustrate the possibility of further improving current devices in terms of their constituent materials for QWs. Our design optimization method is considered to be applicable to any device based on QW structures.

    DOI: 10.1016/j.solener.2020.06.037

  • A general design guideline for strain-balanced quantum-wells toward high- efficiency photovoltaics 査読

    Hsiang-Hung Huang, Kasidit Toprasertpong, Amaury Delamarre, Matthew M. Wilkins, Masakazu Sugiyama, Yoshiaki Nakano

    SOLAR ENERGY   206   655 - 669   2020年8月 (   ISSN:0038-092X )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:PERGAMON-ELSEVIER SCIENCE LTD  

    Due to the tunable optical absorption threshold and several intriguing physical properties, multiple-quantum-well (MQW) structures have been playing a crucial role in achieving ultra-high efficiency in tandem photovoltaic cells and various optoelectronic technologies. However, devices incorporating such nano-structures suffer from poor perpendicular carrier transport, which hinders device performance. On the other hand, designing MQWs is challenging. Simultaneously optimizing the structural parameters and constituent materials suggests a high design complexity with a large parameter space. In this report, on the basis of the quantitative analysis on the degradation of carrier transport, we propose a general design guideline for MQWs by which the structures and constituent materials can both be optimized targeting at a particular absorption threshold. We firstly demonstrate our design flow by optimizing an InGaP/InGaP strain-balanced (SB) MQW at 1.91 eV to replace In0.49Ga0.51P bulk serving as the top cell of dual-MQW triple-junction solar cells. Secondly, we apply the design concept to a conventional InGaAs/GaAsP SBMQW targeting at 1.23 eV, which is significant for not only high-efficiency single-junction photovoltaics but also current-matched tandem cells. The results illustrate the possibility of further improving current devices in terms of their constituent materials for QWs. Our design optimization method is considered to be applicable to any device based on QW structures.

    DOI: 10.1016/j.solener.2020.06.037

  • Comparison of Effective Carrier Mobility between Wire on Well and Planar Superlattice Using Time-of-Flight Measurement 査読

    Meita Asami, Kasidit Toprasertpong, Kentaroh Watanabe, Yoshiaki Nakano, Yoshitaka Okada, Masakazu Sugiyama

    IEEE Journal of Photovoltaics   10 ( 4 )   1008 - 1014   2020年7月 (   ISSN:2156-3381   eISSN:2156-3403 )

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    掲載種別:研究論文(学術雑誌)  

    © 2011-2012 IEEE. Wire on well (WoW) structure, which is formed on a vicinal substrate, has been under consideration for a bandgap adjustor of multijunction cells. The photocurrent of a single-junction cell containing WoW is higher than that of a cell containing planar superlattice (PSL). This work provides direct evidence for the superiority of WoW over PSL in terms of the transport of photogenerated carriers. The time of flight (ToF) of the carriers that were photoexcited near the top surface of a cell was measured with photoluminescence by embedding a probe well beneath the nanostructures (WoW or PSL). The effective mobility of carriers in the nanostructures was obtained from the relationship between the ToF and the electric field applied via external bias. It was revealed that the carrier mobility in WoW was higher than that of PSL. The merit of enhanced mobility for WoW is discussed with device simulation and the potential for higher conversion efficiency is evidenced.

    DOI: 10.1109/JPHOTOV.2020.2981911

  • Comparison of Effective Carrier Mobility Between Wire on Well and Planar Superlattice Using Time-of-Flight Measurement 査読

    Meita Asami, Kasidit Toprasertpong, Kentaroh Watanabe, Yoshiaki Nakano, Yoshitaka Okada, Masakazu Sugiyama

    IEEE JOURNAL OF PHOTOVOLTAICS   10 ( 4 )   1008 - 1014   2020年7月 (   ISSN:2156-3381   eISSN:2156-3403 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC  

    Wire on well (WoW) structure, which is formed on a vicinal substrate, has been under consideration for a bandgap adjustor of multijunction cells. The photocurrent of a single-junction cell containing WoW is higher than that of a cell containing planar superlattice (PSL). This work provides direct evidence for the superiority of WoW over PSL in terms of the transport of photogenerated carriers. The time of flight (ToF) of the carriers that were photoexcited near the top surface of a cell was measured with photoluminescence by embedding a probe well beneath the nanostructures (WoW or PSL). The effective mobility of carriers in the nanostructures was obtained from the relationship between the ToF and the electric field applied via external bias. It was revealed that the carrier mobility in WoW was higher than that of PSL. The merit of enhanced mobility for WoW is discussed with device simulation and the potential for higher conversion efficiency is evidenced.

    DOI: 10.1109/JPHOTOV.2020.2981911

  • Fabrication-Tolerant Half-Ridge InP/InGaAsP Polarization Rotator with Etching-Stop Layer 査読

    Abdulaziz E. Elfiqi, Ryoma Kobayashi, Ryota Tanomura, Takuo Tanemura, Yoshiaki Nakano

    IEEE Photonics Technology Letters   32 ( 11 )   663 - 666   2020年6月 (   ISSN:1041-1135   eISSN:1941-0174 )

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    掲載種別:研究論文(学術雑誌)  

    © 1989-2012 IEEE. Highly efficient and fabrication-error-resistant InP/ InGaAsP polarization rotator based on the half-ridge waveguide is experimentally demonstrated. A thin InAlAs layer is embedded inside the InGaAsP core layer to provide 20-fold etching selectivity with respect to InGaAsP, enabling precise control of the dry-etched core layer thickness. The designed device is fabricated to show a high polarization conversion efficiency of more than 95% with a large etching time tolerance of ±16%. Demonstrated scheme offers a practical path towards realizing compact and low-cost InP-based monolithic dual-polarization transceivers with on-chip polarization (de)multiplexers.

    DOI: 10.1109/LPT.2020.2991450

  • Atomistic-Level Description of GaN/Water Interface by a Combined Spectroscopic and First-Principles Computational Approach 査読

    Masahiro Sato, Yuki Imazeki, Takahito Takeda, Masaki Kobayashi, Susumu Yamamoto, Iwao Matsuda, Jun Yoshinobu, Yoshiaki Nakano, Masakazu Sugiyama

    JOURNAL OF PHYSICAL CHEMISTRY C   124 ( 23 )   12466 - 12475   2020年6月 (   ISSN:1932-7447   eISSN:1932-7455 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:AMER CHEMICAL SOC  

    Photocatalytic water splitting takes place at the semiconductor/electrolyte interface. Although the reactions are strongly affected by the subtle changes in the interface structure, little is known about the interface from an atomistic point of view. In this study, we investigate the GaN(0001)/water interface structure by combining first-principles calculation and ambient pressure X-ray photoelectron spectroscopy (AP-XPS). In particular, the relationship between the geometric and electronic structure of the interface is revealed. First, the evolution of the GaN/water interface structure upon water adsorption is predicted from firstprinciples calculations. Computational results indicate that (1) at low coverage (below 3/4 monolayer), the Fermi level is pinned to the surface states originating from surface Ga atom dangling bonds, and water adsorbs dissociatively, forming oxygen atoms as well as hydroxyl groups, and (2) at higher coverage (above 3/4 monolayer), the Fermi level becomes free from the pinning, and adsorption of intact water becomes dominant. AP-XPS measurements were carried out for the water coverage ranging from submonolayer (low coverage) to several monolayers (high coverage). The core-level binding energies calculated from first-principles were used successfully to assign the adsorbate species to experimental O is peaks. Both the electronic and geometric structures predicted by the first-principles calculation explain well the experimental spectra obtained by the AP-XPS measurements. The results demonstrate that the combined spectroscopic and first-principles computational approach offers a detailed atomic level understanding of the solid/liquid interface structures.

    DOI: 10.1021/acs.jpcc.0c02192

  • Scalability of Universal Nanophotonic Processing Circuits Based on Multi-Plane Light Conversion 査読

    Ryota Tanomura, Rui Tang, Takuo Tanemura, Yoshiaki Nakano

    Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS   2020-May   2020年5月 (   ISSN:1092-8081 )

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    掲載種別:研究論文(国際会議プロシーディングス)  

    © 2020 OSA. Universal linear processing circuit based on multi-plane light conversion, comprising multiport directional couplers, is demonstrated to exhibit excellent fabrication tolerance even at increased scale, owing to its unique all-to-all unitary coupling at every layer.

  • Resolution Enhancement of Optical-Phased-Array-Based Single-Pixel Imaging by using a Multimode Fiber 査読

    Taichiro Fukui, Yoshiaki Nakano, Takuo Tanemura

    Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS   2020-May   2020年5月 (   ISSN:1092-8081 )

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    掲載種別:研究論文(国際会議プロシーディングス)  

    © 2020 OSA. We demonstrate that single-pixel imaging resolution of optical phased array can be enhanced by transmitting through a multimode fiber. Using only 128 phase shifters, >1000 points are resolved, determined by the number of fiber modes.

  • Modeling and design for low-cost multijunction solar cell via light-trapping rear texture technique: Applied in InGaP/GaAs/InGaAs triple junction 査読

    Lin Zhu, Yuji Hazama, Anurag Reddy, Kentaroh Watanabe, Yoshiaki Nakano, Masakazu Sugiyama, Hidefumi Akiyama

    Progress in Photovoltaics: Research and Applications   28 ( 4 )   251 - 265   2020年4月 (   ISSN:1062-7995   eISSN:1099-159X )

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    掲載種別:研究論文(学術雑誌)  

    © 2019 John Wiley & Sons, Ltd. To realize high efficiency in parallel with low cost, a light-trapping rear texture was proposed to be implemented in substrate-free thin-film multijunction (MJ) cells. A detailed-balance theory was formulated taking account of the finite light absorption in thin subcells. Such presented absorption model is general and useful to optimize the subcell thickness for MJ solar cells with light-trapping design. It is applied for InGaP/GaAs/InGaAs triple-junction solar cells to simulate subcell photocurrents and to obtain the current-matching (minimum requisite) subcell thicknesses combinations. Furthermore, the detailed-balance conversion efficiency was estimated for both radiative limit and the cases with below-unity internal radiative efficiency. For InGaP/GaAs/InGaAs MJ cells with InGaP subcell thickness less than 600 nm, adding a random-textured rear reflector can enhance light absorption so significantly that over 90% of InGaAs-cell thickness and even 50% of GaAs-cell thickness would be cut without any penalty in conversion efficiency, compared with the subcell thicknesses in traditional MJ cells with flat rear reflectors. Additionally, the thickness combination, (InGaP, GaAs, and InGaAs) = (450 nm, 333 nm, and 26 nm), is recommended to achieve both high conversion efficiency and low material cost. This work provides a very important theoretical guidance for the development on low-cost and high-efficiency MJ devices.

    DOI: 10.1002/pip.3217

  • Modeling and design for low-cost multijunction solar cell via light-trapping rear texture technique: Applied in InGaP/GaAs/InGaAs triple junction 査読

    Lin Zhu, Yuji Hazama, Anurag Reddy, Kentaroh Watanabe, Yoshiaki Nakano, Masakazu Sugiyama, Hidefumi Akiyama

    PROGRESS IN PHOTOVOLTAICS   28 ( 4 )   251 - 265   2020年4月 (   ISSN:1062-7995   eISSN:1099-159X )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:WILEY  

    To realize high efficiency in parallel with low cost, a light-trapping rear texture was proposed to be implemented in substrate-free thin-film multijunction (MJ) cells. A detailed-balance theory was formulated taking account of the finite light absorption in thin subcells. Such presented absorption model is general and useful to optimize the subcell thickness for MJ solar cells with light-trapping design. It is applied for InGaP/GaAs/InGaAs triple-junction solar cells to simulate subcell photocurrents and to obtain the current-matching (minimum requisite) subcell thicknesses combinations. Furthermore, the detailed-balance conversion efficiency was estimated for both radiative limit and the cases with below-unity internal radiative efficiency. For InGaP/GaAs/InGaAs MJ cells with InGaP subcell thickness less than 600 nm, adding a random-textured rear reflector can enhance light absorption so significantly that over 90% of InGaAs-cell thickness and even 50% of GaAs-cell thickness would be cut without any penalty in conversion efficiency, compared with the subcell thicknesses in traditional MJ cells with flat rear reflectors. Additionally, the thickness combination, (InGaP, GaAs, and InGaAs) = (450 nm, 333 nm, and 26 nm), is recommended to achieve both high conversion efficiency and low material cost. This work provides a very important theoretical guidance for the development on low-cost and high-efficiency MJ devices.

    DOI: 10.1002/pip.3217

  • High-Speed MOVPE Growth of InGaP Solar Cells 査読

    Hassanet Sodabanlu, Akinori Ubukata, Kentaroh Watanabe, Takeyoshi Sugaya, Yoshiaki Nakano, Masakazu Sugiyama

    IEEE Journal of Photovoltaics   10 ( 2 )   480 - 486   2020年3月 (   ISSN:2156-3381   eISSN:2156-3403 )

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    掲載種別:研究論文(学術雑誌)  

    © 2020 IEEE. Impacts of reactor pressure and growth temperature on the qualities and properties of InGaP epitaxial layers grown in a narrow-channel horizontal metalorganic vapor-phase epitaxy (MOVPE) reactor were investigated with a growth rate of 10 μm/h. The roughness of InGaP was improved remarkably when the pressure was increased from 6 to 10 and 15 kPa. The reason is most likely related to the absolute pressure of P and the migrations of In and Ga adatoms on the wafer surface. Owing to the gas-phase reactions and desorption of P from InGaP, the surface of InGaP became rough, and the pit dislocation was increased with an increase in growth temperature. Although a low temperature was beneficial in order to obtain a smooth InGaP surface, the carrier lifetime in InGaP was shortened as a drawback. Consequently, InGaP n-on-p solar cells grown at a low temperature suffered from the degradations of both short-circuit current density and open-circuit voltage. Background impurities and defect densities in low temperature grown InGaP were attributed to these deteriorations. At the optimized growth temperature of 650 °C and the reactor pressure of 15 kPa, the growth rate of InGaP was accelerated to 20 and 30 μm/h. InGaP solar cells were successfully fabricated with the rate of 30 μm/h that opened up the way for the fabrication of III-V multijunction solar cells in the high-speed MOVPE reactor.

    DOI: 10.1109/JPHOTOV.2020.2964994

  • High-Speed MOVPE Growth of InGaP Solar Cells 査読

    Hassanet Sodabanlu, Akinori Ubukata, Kentaroh Watanabe, Takeyoshi Sugaya, Yoshiaki Nakano, Masakazu Sugiyama

    IEEE JOURNAL OF PHOTOVOLTAICS   10 ( 2 )   480 - 486   2020年3月 (   ISSN:2156-3381   eISSN:2156-3403 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC  

    Impacts of reactor pressure and growth temperature on the qualities and properties of InGaP epitaxial layers grown in a narrow-channel horizontal metalorganic vapor-phase epitaxy (MOVPE) reactor were investigated with a growth rate of 10 mu m/h. The roughness of InGaP was improved remarkably when the pressure was increased from 6 to 10 and 15 kPa. The reason is most likely related to the absolute pressure of P and the migrations of In and Ga adatoms on the wafer surface. Owing to the gas-phase reactions and desorption of P from InGaP, the surface of InGaP became rough, and the pit dislocation was increased with an increase in growth temperature. Although a low temperature was beneficial in order to obtain a smooth InGaP surface, the carrier lifetime in InGaP was shortened as a drawback. Consequently, InGaP n-on-p solar cells grown at a low temperature suffered from the degradations of both short-circuit current density and open-circuit voltage. Background impurities and defect densities in low temperature grown InGaP were attributed to these deteriorations. At the optimized growth temperature of 650 degrees C and the reactor pressure of 15 kPa, the growth rate of InGaP was accelerated to 20 and 30 mu m/h. InGaP solar cells were successfully fabricated with the rate of 30 mu m/h that opened up the way for the fabrication of III-V multijunction solar cells in the high-speed MOVPE reactor.

    DOI: 10.1109/JPHOTOV.2020.2964994

  • Monolithic Polarization Controller on Regrowth-Free InGaAsP/InP Platform with Strained MQW Layer 査読

    Maiko Ito, Kosuke Okawa, Takahiro Suganuma, Takuo Tanemura, Yoshiaki Nakano

    2020 Optical Fiber Communications Conference and Exhibition, OFC 2020 - Proceedings   2020年3月

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    掲載種別:研究論文(国際会議プロシーディングス)  

    © 2020 OSA. Carrier-injection-based polarization controller with strained MQW layer is demonstrated. Based on novel design concept, both polarization-rotating and phase-shifting sections are integrated monolithically on regrowth-free InGaAsP/InP platform to achieve efficient conversion over the entire Poincaré sphere.

  • Single-Pixel Imaging through Multimode Fiber using Silicon Optical Phased Array Chip 査読

    Taichiro Fukui, Yusuke Kohno, Rui Tang, Yoshiaki Nakano, Takuo Tanemura

    2020 Optical Fiber Communications Conference and Exhibition, OFC 2020 - Proceedings   2020年3月

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    掲載種別:研究論文(国際会議プロシーディングス)  

    © 2020 OSA. We experimentally demonstrate single-pixel imaging using a multimode fiber attached with optical phased-array chip. By driving 128 integrated phase shifters, speckle patterns are generated from the fiber to realize clear imaging with 490 resolvable points.

  • Sensitivity Analysis of Photonic Integrated Direct-Detection Stokes-Vector Receiver 査読

    Takuo Tanemura, Takahiro Suganuma, Yoshiaki Nakano

    Journal of Lightwave Technology   38 ( 2 )   447 - 456   2020年1月 (   ISSN:0733-8724   eISSN:1558-2213 )

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    掲載種別:研究論文(学術雑誌)  

    © 1983-2012 IEEE. Direct-detection (DD) Stokes vector receiver (SVR) has rapidly gained interest for the high-speed datacenter and short-reach links, owing to its capability of recovering 3D optical signals without using expensive coherent detection. In order to reduce the size and cost of SVR, we have recently proposed and demonstrated a simple and compact device with single-ended photodetectors (S-PDs), which can be monolithically integrated on InP. In this paper, we provide comprehensive analysis on the receiver sensitivity for different SVR configurations. From rigorous theoretical investigations, we derive optimal design of SVR to maximize the sensitivity as well as explicit analytical expression of the bit-error-rate assuming an unamplified thermal-noise-limited case. From the obtained results, we find that the optimized 4-port S-PD-based SVR exhibits a moderate penalty of 2.1 dB with respect to the conventional more complicated SVR configuration based on 3-port balanced PDs. Since the proposed S-PD-based SVR can reduce the number of PDs, and requires neither a polarization-beam splitter nor precisely tuned optical interferometer, it may be an attractive candidate in realizing a low-cost and compact fully integrated DD-based receiver for the future >Tb/s short-reach systems, where the power budget is not the primary concern.

    DOI: 10.1109/JLT.2019.2952980

  • Robust Integrated Optical Unitary Converter Using Multiport Directional Couplers 査読

    Ryota Tanomura, Rui Tang, Samir Ghosh, Takuo Tanemura, Yoshiaki Nakano

    Journal of Lightwave Technology   38 ( 1 )   60 - 66   2020年1月 (   ISSN:0733-8724   eISSN:1558-2213 )

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    掲載種別:研究論文(学術雑誌)  

    © 2019 IEEE. An integrated optical unitary converter (OUC), which can realize arbitrary N × N unitary transformation on chip, is promising for widespread applications in various areas, such as optical communication, quantum information processing, and optical neural networks. Most of the integrated OUCs demonstrated to date comprise cascaded 2 × 2 Mach-Zehnder interferometers (MZIs) based on Reck's scheme or its variation, or cascaded multimode interference (MMI) couplers based on multi-plane light conversion (MPLC). However, these schemes are sensitive to fabrication errors, making it difficult to realize high-performance large-scale OUCs. In this work, we experimentally demonstrate a silicon photonic 4 × 4 OUC that is inherently robust to fabrication errors, based on a novel structure. The proposed structure consists of cascaded multiport directional couplers (DCs) and phase shifter arrays. In this scheme, the multiport DC assures unitary transformation with inherent robustness against fabrication errors. By optimizing all the phase shifters using a simulated annealing algorithm, we experimentally demonstrate reconfigurable 4-mode demultiplexing and error-free demultiplexing of 40-Gb/s non-return-to-zero (NRZ) signals.

    DOI: 10.1109/JLT.2019.2943116

  • Monolithic polarization controller on regrowth-free InGaAsP/InP platform with strained MQW layer 査読

    Maiko Ito, Kosuke Okawa, Takahiro Suganuma, Takuo Tanemura, Yoshiaki Nakano

    Optics InfoBase Conference Papers   Part F174-OFC 2020   2020年

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    掲載種別:研究論文(国際会議プロシーディングス)  

    OFC 2020 © OSA 2020 © 2020 The Author(s) Carrier-injection-based polarization controller with strained MQW layer is demonstrated. Based on novel design concept, both polarization-rotating and phase-shifting sections are integrated monolithically on regrowth-free InGaAsP/InP platform to achieve efficient conversion over the entire Poincaré sphere.

    DOI: 10.1364/OFC.2020.T4H.4

  • Rear homo and hetero junctions III-V n-on-p solar cells grown with high speed MOVPE 査読

    Hassanet Sodabanlu, Akinori Ubukata, Kentaroh Watanabe, Takeyoshi Sugaya, Yoshiaki Nakano, Masakazu Sugiyama

    2020 47TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)   152 - 155   2020年 (   ISSN:0160-8371 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    This study focuses on how the performances of III-V cells with high-speed metalorganic vapor phase epitaxy (MOVPE) are affected by the cell structure: a conventional non-p (a thin highly doped n-emitter on a thick lightly-doped p-base), a rear junction (RJ) n-on-p (a thick lightly-doped n-emitter on a thin highly-doped p-base) and a rear hetero junction (RHJ; a thick lightly-doped n-emitter on a highly-doped p-BSF). For the 120-mu m/h grown GaAs solar cells, dark current density (J(dark)) corresponding to non-radiative recombination in a space charge region (n=2) and the consequent open circuit voltage (V-oc) were significantly improved with RJ and RHJ structures. The reason was the lower defect density, most likely native point defects, in n-GaAs compared with that in p-GaAs. However, both short circuit current density and fill-factor were decreased in RJ and RHJ samples, and more accented in the latter. In the case of 30-mu m/h grown InGaP solar cells, the RHJ (n-InGaP/p-InAlGaP) structure showed no advantage over the normal n-on-p device in terms of J(dar)k and V-oc, probably due to the abruptness/roughness of hetero interface. Nevertheless, the RHJ structure has a good potential for high speed MOVPE growth of multiple junction solar cells because of its simple structure with smaller number of interfaces.

  • Simplified optical transceivers for Stokes-vector transmission systems 査読

    Shota Ishimura, Samir Ghosh, Yoshiaki Nakano, Takuo Tanemura

    Proceedings of SPIE - The International Society for Optical Engineering   11308   2020年 (   ISSN:0277-786X   eISSN:1996-756X )

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    掲載種別:研究論文(国際会議プロシーディングス)  

    © 2020 SPIE. Stokes-vector modulation (SVM) formats have recently drawn attention for realizing low-cost and high-capacity optical transceivers. However, SVM transmitters reported so far are still complicated because they are based on optical components employed mainly in coherent systems. In order to reduce the device size, cost and power consumption, a more compact transmitter configuration is desired. In this invited paper, we first experimentally demonstrate transmission of 30-Gb/s 8-ary SVM signal over 50 km using the proposed configuration. Then we numerically investigate system performance of our recently-proposed compact transmitter for the 8-ary SVM format.

    DOI: 10.1117/12.2547308

  • Trade-off study on the radiative efficiency and carrier transport of multiple-quantum-well solar cells 査読

    Hsiang Hung Huang, Kasidit Toprasertpong, Matthew Wilkins, Karin Hinzer, Masakazu Sugiyama, Yoshiaki Nakano

    Proceedings of SPIE - The International Society for Optical Engineering   11275   2020年 (   ISSN:0277-786X   eISSN:1996-756X )

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    掲載種別:研究論文(国際会議プロシーディングス)  

    © COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only. Solar cells based on multiple quantum wells have attracted a great deal of attention in recent years. Due to the superior radiative nature, the output voltage is expected to be more ideal over solar cells made of bulk materials. In this research, based on the effective map analysis technique we proposed previously to ensure a fair comparison, we investigate quantum well solar cells and their bulk counterpart in terms of radiative efficiency, and compare several significant properties at a consistent absorption edge wavelength. This provides a good insight into the factors which limit the efficiency of quantum well solar cells.

    DOI: 10.1117/12.2546279

  • Scalability of Universal Nanophotonic Processing Circuits based on Multi-Plane Light Conversion 査読

    Ryota Tanomura, Rui Tang, Takuo Tanemura, Yoshiaki Nakano

    2020 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)   2020年 (   ISSN:2160-9020 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    Universal linear processing circuit based on multi-plane light conversion, comprising multiport directional couplers, is demonstrated to exhibit excellent fabrication tolerance even at increased scale, owing to its unique all-to-all unitary coupling at every layer. (C) 2020 The Author(s)

  • Single-pixel imaging through multimode fiber using silicon optical phased array chip 査読

    Taichiro Fukui, Yusuke Kohno, Rui Tang, Yoshiaki Nakano, Takuo Tanemura

    Optics InfoBase Conference Papers   Part F174-OFC 2020   2020年

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    掲載種別:研究論文(国際会議プロシーディングス)  

    © OSA 2020 © 2020 The Author(s) We experimentally demonstrate single-pixel imaging using a multimode fiber attached with optical phased-array chip. By driving 128 integrated phase shifters, speckle patterns are generated from the fiber to realize clear imaging with 490 resolvable points.

  • Complete retrieval of multi-level Stokes vector signal by an InP-based photonic integrated circuit 査読

    Samir Ghosh, Takahiro Suganuma, Shota Ishimura, Yoshiaki Nakano, Takuo Tanemura

    Optics Express   27 ( 25 )   36449 - 36458   2019年12月 (     eISSN:1094-4087 )

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    掲載種別:研究論文(学術雑誌)  

    © 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement An integrated Stokes vector receiver (SVR) that can retrieve state of polarization of light in the three-dimensional (3D) Stokes space has widespread applications, such as short-reach communication links, polarization-sensitive imaging, and sensing. While various approaches have been demonstrated to date, monolithic integration of polarization components on InP has been a challenging issue. In this paper, we develop a novel 4-port SVR circuit integrated on a compact InP chip to retrieve complete Stokes parameters of incoming light with various intensity and degree-of-polarization. By judiciously designing the lengths and positions of asymmetric waveguide sections, we demonstrate that the SV of signal can be projected onto four vertices of a regular tetrahedron inscribed in the Poincaré sphere. Additionally, we employ this device in decoding 10-Gbaud 4-ary and 8-ary Stokes-vector-modulated signals in the 3D Stokes space.

    DOI: 10.1364/OE.27.036449

  • Gain-Coupled 4 × 25 Gb/s EML Array Based on an Identical Epitaxial Layer Integration Scheme 査読

    Shuhan Yang, Changzheng Sun, Bing Xiong, Juan Zhang, Jian Wang, Yi Luo, Zhibiao Hao, Yanjun Han, Lai Wang, Hongtao Li, Takuo Tanemura, Yoshiaki Nakano

    IEEE Journal of Selected Topics in Quantum Electronics   25 ( 6 )   2019年11月 (   ISSN:0792-1233   eISSN:2191-0359 )

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    掲載種別:研究論文(学術雑誌)  

    © 1995-2012 IEEE. Gain-coupled 4 × 25 Gb/s electroabsorption modulated laser (EML) array is implemented by an identical epitaxial layer integration scheme. Gain-coupling is incorporated via absorptive gratings to improve the single mode yield of the device. The EML array exhibits excellent single-mode performance, high extinction ratio, and a modulation bandwidth over 28 GHz. Clear eye opening under 28-Gb/s nonreturn-to-zero modulation has been demonstrated for all four channels. Transmission performance of the EML array over 20- and 40-km single-mode fiber is tested, confirming its potential for 100 GbE applications.

    DOI: 10.1109/JSTQE.2019.2911417

  • Low-cost transceivers for multi-dimensional Stokes-vector and coherent transmission systems 査読

    Shota Ishimura, Kosuke Nishimura, Yoshiaki Nakano, Takuo Tanemura

    Asia Communications and Photonics Conference, ACP   2019-November   2019年11月 (   ISSN:2162-108X )

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    掲載種別:研究論文(国際会議プロシーディングス)  

    Asia Communications and Photonics Conference (ACP) © OSA 2019 In this invited paper, we report our recent progresses for SVM-based systems. The results show that the technologies for the SVM format can simplify not only the advanced DD systems, but also the coherent systems.

  • Current transport efficiency analysis of multijunction solar cells by luminescence imaging 査読

    Hao Xu, Amaury Delamarre, Bernice Mae F. Yu Jeco, Hugh Johnson, Kentaroh Watanabe, Yoshitaka Okada, Jean François Guillemoles, Yoshiaki Nakano, Masakazu Sugiyama

    Progress in Photovoltaics: Research and Applications   27 ( 10 )   835 - 843   2019年10月 (   ISSN:1062-7995   eISSN:1099-159X )

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    掲載種別:研究論文(学術雑誌)  

    © 2019 John Wiley & Sons, Ltd. Multijunction solar cells are currently leading in efficiency among all types of solar cells. However, the efficiency of those cells under concentrated illumination is limited by the trade-off between shadowing by the contact grid and series resistances. In this paper, we provide a method using luminescence to image the current transport efficiency for a precise and rapid measurement of the resistance effect. Light beam induced current (LBIC) measurement is used for the first time to calculate current transport efficiency in comparison with that of the luminescence method. Profiles of transport efficiency in both means are in good agreement. Furthermore, a quasi-3-D simulation using SPICE is used to explain the transport efficiency image. We find that the carrier transport efficiency distribution is primarily influenced by the perimeter recombination of the middle cell.

    DOI: 10.1002/pip.3140

  • Offset-Quantum-Well-Based Integrated Stokes Vector Modulator on InP 査読

    Mohiyuddin Kazi, Samir Ghosh, Masakazu Sugiyama, Yoshiaki Nakano

    IEEE Photonics Technology Letters   31 ( 15 )   1233 - 1236   2019年8月 (   ISSN:1041-1135   eISSN:1941-0174 )

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    掲載種別:研究論文(学術雑誌)  

    © 2019 IEEE. We demonstrate an offset-quantum-well-based Stokes vector modulator (SVM) on InP with compressively strained InGaAsP/InGaAsP multiple-quantum wells (MQWs). Tuning the applied voltages to the phase modulators, arbitrary state-of-polarization (SOP) is generated at the output. A single metal-organic chemical vapor deposition (MOCVD) regrowth step is employed for integrating a pair of passive polarization converters (PCs) and active MQW-based polarization-dependent phase modulator (PD-PM) sections. All components are concatenated in series on an offset-quantum well (OQW) platform. A 3.5-mm-long SVM has a PD-PM with half-wave voltage Vπ of 14 V and VπL of 2.1 V.cm.

    DOI: 10.1109/LPT.2019.2923102

  • Offset-Quantum-Well-Based Integrated Stokes Vector Modulator on InP 査読

    Mohiyuddin Kazi, Samir Ghosh, Masakazu Sugiyama, Yoshiaki Nakano

    IEEE PHOTONICS TECHNOLOGY LETTERS   31 ( 15 )   1233 - 1236   2019年8月 (   ISSN:1041-1135   eISSN:1941-0174 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC  

    We demonstrate an offset-quantum-well-based Stokes vector modulator (SVM) on InP with compressively strained InGaAsP/InGaAsP multiple-quantum wells (MQWs). Tuning the applied voltages to the phase modulators, arbitrary state-of-polarization (SOP) is generated at the output. A single metal-organic chemical vapor deposition (MOCVD) regrowth step is employed for integrating a pair of passive polarization converters (PCs) and active MQW-based polarization-dependent phase modulator (PD-PM) sections. All components are concatenated in series on an offset-quantum well (OQW) platform. A 3.5-mm-long SVM has a PD-PM with half-wave voltage V-pi of 14 V and V pi L of 2.1 V.cm.

    DOI: 10.1109/LPT.2019.2923102

  • Compact Reconfigurable Optical Unitary Converter based on Non-Uniform Multimode Interference Coupler 査読

    Ryota Tanomura, Rui Tang, Takuo Tanemura, Yoshiaki Nakano

    OECC/PSC 2019 - 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing 2019   2019年7月

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    掲載種別:研究論文(国際会議プロシーディングス)  

    © 2019 The Institute of Electronics, Information and Communication Engineers (IEICE). We propose and demonstrate reconfigurable optical unitary converter with non-uniform multimode interference (MMI) couplers. By using compact 182-\mu \mathrm{m} -long non-uniform MMIs, desired 8\times 8 unitary operation is obtained with the crosstalk equivalent to that with 364-\mu \mathrm{m} -long uniform-MMIs.

    DOI: 10.23919/PS.2019.8817811

  • Design of Efficient Polarization Modulator with Asymmetrically Coupled MQW 査読

    Peng Zhou, Yoshiaki Nakano, Takuo Tanemura

    OECC/PSC 2019 - 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing 2019   2019年7月

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    掲載種別:研究論文(国際会議プロシーディングス)  

    © 2019 The Institute of Electronics, Information and Communication Engineers (IEICE). We propose novel integrated polarization modulator with InGaAsP three-step asymmetrically coupled quantum wells. By using abnormal quantum-confined Stark effect, we numerically demonstrate more than one-order improvement in modulation efficiency from the conventional uniform quantum-well design.

    DOI: 10.23919/PS.2019.8818063

  • Fully Integrated 4-port Stokes Vector Receiver for Multi-Level 3D Signal Detection 査読

    Takahiro Suganuma, Warakom Yanwachirakul, Eisaku Kato, Masakazu Sugiyama, Yoshiaki Nakano, Takuo Tanemura

    OECC/PSC 2019 - 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing 2019   2019年7月

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    掲載種別:研究論文(国際会議プロシーディングス)  

    © 2019 The Institute of Electronics, Information and Communication Engineers (IEICE). We fabricate and experimentally demonstrate a 4-port Stokes vector receiver with on-chip photodetectors monolithically integrated with InP-based polarization-converting circuit. Full Stokes parameters of intensity-varied signals are successfully retrieved from photocurrent signals of compressively-strained multiple-quantum-well photodetectors.

    DOI: 10.23919/PS.2019.8818167

  • Strain control of GaN grown on Si substrates using an AlGaN interlayer 査読

    Momoko Deura, Takuya Nakahara, Takeshi Momose, Yoshiaki Nakano, Masakazu Sugiyama, Yukihiro Shimogaki

    Journal of Crystal Growth   514   65 - 69   2019年5月 (   ISSN:0022-0248 )

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    掲載種別:研究論文(学術雑誌)  

    © 2019 To suppress wafer bowing and crack generation of GaN on Si substrates, we investigated the effects of the Al content and thickness of the AlGaN interlayer on the compressive strain in the overlying GaN layer theoretically and experimentally. In the simulation, AlGaN relaxes gradually over the critical thickness. Therefore, the relaxation ratio of AlGaN at the top surface can be defined as a function of Al content and thickness. Too high Al content or too thick AlGaN interlayer induced too large initial strain in the upper GaN layer, which caused rapid and succeeding gradual relaxation, i.e., decrease of strain, of the GaN layer during growth because of generation of threading dislocations. Conversely, low Al content or thin AlGaN interlayer could induce constant but only small strain in the GaN layer. Therefore, the ideal relaxation ratio of the AlGaN surface exists to apply the maximal constant compressive strain in the GaN layer. The relaxation ratios of AlGaN interlayers determined in experiments were much smaller than those calculated in the simulation. Although the measured compressive strain in the GaN layer was smaller than expected, its decrease rate was small when grown on AlGaN interlayers with an almost ideal relaxation ratio.

    DOI: 10.1016/j.jcrysgro.2019.01.013

  • 8-Ary Stokes-Vector Signal Generation and Transmission Employing a Simplified Transmitter 査読

    Samir Ghosh, Shota Ishimura, Takahiro Suganuma, Takuo Tanemura, Yoshiaki Nakano

    2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings   2019年5月

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    掲載種別:研究論文(国際会議プロシーディングス)  

    © 2019 The Author(s) 2019 OSA. We experimentally demonstrate a simple straight-line configuration of Stokes vector modulator with two cascaded phase modulators. Three-dimensional 8-ary Stokes-vector-modulated signal is generated at 30 Gb/s and transmitted over a 50-km dispersion-compensated single-mode fiber.

    DOI: 10.23919/CLEO.2019.8749402

  • Electro-optic polymer surface-normal modulator using silicon high-contrast grating resonator 査読

    Makoto Ogasawara, Yuji Kosugi, Jiaqi Zhang, Yuki Okamoto, Yoshio Mita, Akira Otomo, Yoshiaki Nakano, Takuo Tanemura

    2019 Conference on Lasers and Electro-Optics, CLEO 2019 - Proceedings   2019年5月

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    掲載種別:研究論文(国際会議プロシーディングス)  

    © 2019 The Author(s) 2019 OSA. A surface-normal optical modulator using electro-optic polymer embedded inside a 570-nm-thick silicon high-contrast-grating resonator is fabricated. With a voltage applied to silicon grating, we obtain > 20% intensity modulation of the transmitted light at 30 MHz.

    DOI: 10.23919/CLEO.2019.8750627

  • Horn-Shaped Metal-Clad Modulator Coupled to InP Waveguide 査読

    Yuguang Wang, Mitsuhiro Watanabe, Yi Xiao, Takuo Tanemura, Yoshiaki Nakano

    2019 Compound Semiconductor Week, CSW 2019 - Proceedings   2019年5月

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    掲載種別:研究論文(国際会議プロシーディングス)  

    © 2019 IEEE. We propose a compact horn-shaped metal-clad cavity modulator integrated on an InP waveguide, operating in 1.5-μm wavelength range. Through 3D finite difference time-domain simulation, we show that the Q factor of the resonant transmission dip can be enhanced drastically from 152 to 408 by introducing a horn-shaped SiO2 insulation layer to the cavity with an optimized slope angle. As a result, efficient modulation with the extinction ratio of 3.2 dB and insertion loss of 1.5 dB is obtained in a 2.3-μm-long modulator under a refractive index change of Δn = 0.01.

    DOI: 10.1109/ICIPRM.2019.8819298

  • Numerical Demonstration of Trade-off between Carrier Confinement Effect and Carrier Transport for Multiple-Quantum-Well Based High-efficiency InGaP Solar Cells 査読

    Hsiang Hung Huang, Kasidit Toprasertpong, Amaury Delamarre, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano

    2019 Compound Semiconductor Week, CSW 2019 - Proceedings   2019年5月

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    掲載種別:研究論文(国際会議プロシーディングス)  

    © 2019 IEEE. To promote InGaP solar cell efficiency toward the theoretical limit, one promising approach is to incorporate multiple quantum wells (MQWs) into the InGaP host and improve its open-circuit voltage by facilitating radiative carrier recombination owing to carrier confinement. In this research, we demonstrate numerically that a strain-balanced (SB) In1-xGaxP/In1-yGayP MQW enhances confined carrier density while degrades the effective carrier mobility. However, a smart design of the MQW structure is possible by considering quantitatively the trade-off between carrier confinement effect and carrier transport, and MQW can be advantageous over the InGaP bulk material for boosting photovoltaic efficiency.

    DOI: 10.1109/ICIPRM.2019.8819121

  • Strain control of GaN grown on Si substrates using an AlGaN interlayer 査読

    Momoko Deura, Takuya Nakahara, Takeshi Momose, Yoshiaki Nakano, Masakazu Sugiyama, Yukihiro Shimogaki

    JOURNAL OF CRYSTAL GROWTH   514   65 - 69   2019年5月 (   ISSN:0022-0248   eISSN:1873-5002 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:ELSEVIER SCIENCE BV  

    To suppress wafer bowing and crack generation of GaN on Si substrates, we investigated the effects of the Al content and thickness of the AlGaN interlayer on the compressive strain in the overlying GaN layer theoretically and experimentally. In the simulation, AlGaN relaxes gradually over the critical thickness. Therefore, the relaxation ratio of AlGaN at the top surface can be defined as a function of Al content and thickness. Too high Al content or too thick AlGaN interlayer induced too large initial strain in the upper GaN layer, which caused rapid and succeeding gradual relaxation, i.e., decrease of strain, of the GaN layer during growth because of generation of threading dislocations. Conversely, low Al content or thin AlGaN interlayer could induce constant but only small strain in the GaN layer. Therefore, the ideal relaxation ratio of the AlGaN surface exists to apply the maximal constant compressive strain in the GaN layer. The relaxation ratios of AlGaN interlayers determined in experiments were much smaller than those calculated in the simulation. Although the measured compressive strain in the GaN layer was smaller than expected, its decrease rate was small when grown on AlGaN interlayers with an almost ideal relaxation ratio.

    DOI: 10.1016/j.jcrysgro.2019.01.013

  • First-principles modeling of GaN(0001)/water interface: Effect of surface charging 査読

    Sato Masahiro, Imazeki Yuki, Fujii Katsushi, Nakano Yoshiaki, Sugiyama Masakazu

    JOURNAL OF CHEMICAL PHYSICS   150 ( 15 )   2019年4月 (   ISSN:0021-9606 )

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    掲載種別:研究論文(学術雑誌)  

    DOI: 10.1063/1.5086321

  • 4-Port Integrated Stokes Vector Receiver Circuit for Multi-Level 3D Signal Detection and OSNR Monitoring 査読

    Takahiro Suganuma, Samir Ghosh, Yoshiaki Nakano, Takuo Tanemura

    2019 Optical Fiber Communications Conference and Exhibition, OFC 2019 - Proceedings   2019年4月

     詳細

    掲載種別:研究論文(国際会議プロシーディングス)  

    © 2019 OSA. A novel Stokes vector (SV) receiver circuit with 4-port configuration integrated on a compact InP chip is fabricated to demonstrate SV retrieval with various intensity and degree-of-polarization as well as application to in-band OSNR monitoring.

    DOI: 10.1364/ofc.2019.w3b.6

  • Large-Scale Silicon Photonic Phased Array Chip for Single-Pixel Ghost Imaging 査読

    Yusuke Kohno, Kento Komatsu, Yasuyuki Ozeki, Yoshiaki Nakano, Takuo Tanemura

    2019 Optical Fiber Communications Conference and Exhibition, OFC 2019 - Proceedings   2019年4月

     詳細

    掲載種別:研究論文(国際会議プロシーディングス)  

    © 2019 OSA. We develop large-scale optical phased array (OPA) with 128 phase shifters integrated on a compact silicon chip for single-pixel ghost imaging application. By using speckle illumination pattern generated from OPA, calibration-free robust imaging is demonstrated.

    DOI: 10.1364/ofc.2019.m4e.2

  • Integrated Reconfigurable 4×4 Optical Unitary Converter using Multiport Directional Couplers 査読

    Ryota Tanomura, Rui Tang, Samir Ghosh, Takuo Tanemura, Yoshiaki Nakano

    2019 Optical Fiber Communications Conference and Exhibition, OFC 2019 - Proceedings   2019年4月

     詳細

    掲載種別:研究論文(国際会議プロシーディングス)  

    © 2019 OSA. We demonstrate novel silicon photonic 4×4 reconfigurable optical unitary converter, comprising multiport directional couplers and phase shifter arrays. By optimizing the phase shift with simulated annealing algorithm, reconfigurable mode sorting and switching are experimentally realized.

    DOI: 10.1364/ofc.2019.th1e.3

  • Polarization-diversity Stokes-analyzer-based coherent receiver 査読

    S. Ishimura, K. Nishimura, Y. Nakano, T. Tanemura

    Optics Express   27 ( 6 )   9071 - 9078   2019年3月 (     eISSN:1094-4087 )

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    掲載種別:研究論文(学術雑誌)  

    © 2019 Optical Society of America. Since the conventional coherent transceiver is costly to be deployed in short-reach networks due to its complicated receiver structure, it is desired to simplify the structure itself. In this paper, we propose a simple polarization-diversity coherent receiver structure by exploiting the concept of the Stokes analyzer. Compared to the conventional architecture, the number of the photodiodes (PDs) is reduced from eight to six without relying on complicated analog circuits. In addition, splitters and combiners for dual-polarization (DP) signals can be replaced with only one polarization beam splitter or combiner (PBS/C). For evaluation of the proof-of-concept (PoC), we develop a prototype of the receiver using free-space optical components. We demonstrate the transmission of 120-Gb/s DP quadrature phase-shift keying (QPSK) and DP 8-ary quadrature-amplitude modulation (8QAM) signals over a 100-km single-mode fiber (SMF). We believe that the demonstrated architecture could potentially be integrated monolithically on silicon-photonic or InP platforms to realize compact and low-cost coherent transceivers for short-reach applications.

    DOI: 10.1364/OE.27.009080

  • High throughput MOVPE and accelerated growth rate of GaAs for PV application 査読

    Akinori Ubukata, Hassanet Sodabanlu, Taketo Aihara, Ryuji Oshima, Takeyoshi Sugaya, Shuichi Koseki, Koh Matsumoto, Kentaroh Watanabe, Yoshiaki Nakano, Masakazu Sugiyama

    Journal of Crystal Growth   509   87 - 90   2019年3月 (   ISSN:0022-0248 )

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    掲載種別:研究論文(学術雑誌)  

    © 2018 Elsevier B.V. We present the feasibility of metalorganic vapor phase epitaxy (MOVPE) with extremely high-speed growth of GaAs for solar cell applications. The growth rate was increased up to 120 μm/h, and exhibited an almost linear relationship with the amount of supplied trimethylgallium (TMGa). The thickness variation and doped carrier concentration of GaAs grown at 90 μm/h were comparable to those of conventionally grown GaAs at a lower growth rate. The potential for reducing the V/III supply ratio was investigated to reduce the material cost. Non-doped GaAs wafers were grown at the accelerated growth rate of 90 μm/h, with various V/III ratios. The growth rate of GaAs increased by 20% when the V/III ratio was decreased from 40 to 5. In low temperature photoluminescence (PL) measurement, significant change in PL spectra was not observed, indicating that there was no significant change in quality. The light-power conversion efficiency was almost comparable for V/III ratios from 10 to 40 whereas that at the lowest V/III ratio of 5 was degraded. Photovoltaic (PV) solar cells of GaAs were fabricated with various growth condition. It is found that the performance of the cells grown at 90 μm/h were comparable with previous results.

    DOI: 10.1016/j.jcrysgro.2018.12.004

  • High throughput MOVPE and accelerated growth rate of GaAs for PV application 査読

    Akinori Ubukata, Hassanet Sodabanlu, Taketo Aihara, Ryuji Oshima, Takeyoshi Sugaya, Shuichi Koseki, Koh Matsumoto, Kentaroh Watanabe, Yoshiaki Nakano, Masakazu Sugiyama

    JOURNAL OF CRYSTAL GROWTH   509   87 - 90   2019年3月 (   ISSN:0022-0248   eISSN:1873-5002 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:ELSEVIER SCIENCE BV  

    We present the feasibility of metalorganic vapor phase epitaxy (MOVPE) with extremely high-speed growth of GaAs for solar cell applications. The growth rate was increased up to 120 mu m/h, and exhibited an almost linear relationship with the amount of supplied trimethylgallium (TMGa). The thickness variation and doped carrier concentration of GaAs grown at 90 mu m/h were comparable to those of conventionally grown GaAs at a lower growth rate. The potential for reducing the V/III supply ratio was investigated to reduce the material cost. Nondoped GaAs wafers were grown at the accelerated growth rate of 90 mu m/h, with various V/III ratios. The growth rate of GaAs increased by 20% when the V/III ratio was decreased from 40 to 5. In low temperature photoluminescence (PL) measurement, significant change in PL spectra was not observed, indicating that there was no significant change in quality. The light-power conversion efficiency was almost comparable for V/III ratios from 10 to 40 whereas that at the lowest V/III ratio of 5 was degraded. Photovoltaic (PV) solar cells of GaAs were fabricated with various growth condition. It is found that the performance of the cells grown at 90 mu m/h were comparable with previous results.

    DOI: 10.1016/j.jcrysgro.2018.12.004

  • Generalized Reciprocity Relations in Solar Cells with Voltage-Dependent Carrier Collection: Application to p - I - n Junction Devices 査読

    Kasidit Toprasertpong, Amaury Delamarre, Yoshiaki Nakano, Jean François Guillemoles, Masakazu Sugiyama

    Physical Review Applied   11 ( 2 )   2019年2月 (     eISSN:2331-7019 )

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    掲載種別:研究論文(学術雑誌)  

    © 2019 American Physical Society. Two reciprocity theorems are important for fundamental understanding of the solar cell operation and applications to device evaluation: (1) the carrier-transport reciprocity connecting the dark-carrier injection with the short-circuit photocarrier collection and (2) the optoelectronic reciprocity connecting the electroluminescence with the photovoltaic quantum efficiency at short circuit. These theorems, however, fail in devices with thick depletion regions such as p-i-n junction solar cells. By properly linearizing the carrier-transport equation in such devices, we report that the dark-carrier injection is related to the photocarrier collection efficiency at the operating voltage, not at short circuit as suggested in the original theorem. This leads to the general form of the optoelectronic reciprocity relation connecting the electroluminescence with the voltage-dependent quantum efficiency, providing a correct interpretation of the optoelectronic properties of p-i-n junction devices. We also discuss the validity of the well-known relation between the open-circuit voltage and the external luminescence efficiency. The impact of illumination intensity and device parameters on the validity of the reciprocity theorems is quantitatively investigated.

    DOI: 10.1103/PhysRevApplied.11.024029

  • Design evolution of MOVPE reactors for improved productivity: Adaptation to nitrides and feedback to classical III-V 査読

    Koh Matsumoto, Akinori Ubukata, Piao Guanxi, Yoshiki Yano, Toshiya Tabuchi, Shuichi Koseki, Hassanet Sodabanlu, Kentaro Watanabe, Yoshiaki Nakano, Masakazu Sugiyama

    Journal of Crystal Growth   507   134 - 138   2019年2月 (   ISSN:0022-0248 )

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    掲載種別:研究論文(学術雑誌)  

    © 2018 Elsevier B.V. High growth rate of GaAs more than 90 μm/h is achieved in the attempt of the productivity improvement of solar cells. The design concept is derived from the MOVPE reactor for nitrides. The design criteria for nitride MOVPE reactor were found to be very useful for GaAs MOVPE. Originally, MOVPE reactors for nitrides were developed on the basis of the reactor design for classical III-V materials. Today, the principle of reactor design to cope with the singularity of nitrides brings about essential feedback to the next-generation reactors for classical III-V materials for improved productivity. At first, design criteria for GaN MOVPE reactor are described in light of the vapor phase reaction. Secondly, cost analysis of a 19 µm-thick GaN layer on a bulk GaN substrate for a vertical diode is briefly discussed in light of a trade-off between a high purity and a high growth rate of GaN. In GaAs-based solar cells, the thickness of light absorber is a couple of micrometers, accompanied by a thin (Al)InGaP cap, the growth time of which can be reduced to a few minutes if the growth rate is on the order of a few tens µm/h. In consideration of these factors, cost analysis of MOVPE for GaAs solar cells will be discussed in comparison with GaN on GaN diode.

    DOI: 10.1016/j.jcrysgro.2018.11.011

  • Design evolution of MOVPE reactors for improved productivity: Adaptation to nitrides and feedback to classical III-V 査読

    Koh Matsumoto, Akinori Ubukata, Piao Guanxi, Yoshiki Yano, Toshiya Tabuchi, Shuichi Koseki, Hassanet Sodabanlu, Kentaro Watanabe, Yoshiaki Nakano, Masakazu Sugiyama

    JOURNAL OF CRYSTAL GROWTH   507   134 - 138   2019年2月 (   ISSN:0022-0248   eISSN:1873-5002 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:ELSEVIER SCIENCE BV  

    High growth rate of GaAs more than 90 mu m/h is achieved in the attempt of the productivity improvement of solar cells. The design concept is derived from the MOVPE reactor for nitrides. The design criteria for nitride MOVPE reactor were found to be very useful for GaAs MOVPE. Originally, MOVPE reactors for nitrides were developed on the basis of the reactor design for classical III-V materials. Today, the principle of reactor design to cope with the singularity of nitrides brings about essential feedback to the next-generation reactors for classical III-V materials for improved productivity.At first, design criteria for GaN MOVPE reactor are described in light of the vapor phase reaction. Secondly, cost analysis of a 19 mu m-thick GaN layer on a bulk GaN substrate for a vertical diode is briefly discussed in light of a trade-off between a high purity and a high growth rate of GaN.In GaAs-based solar cells, the thickness of light absorber is a couple of micrometers, accompanied by a thin (Al) InGaP cap, the growth time of which can be reduced to a few minutes if the growth rate is on the order of a few tens mu m/h. In consideration of these factors, cost analysis of MOVPE for GaAs solar cells will be discussed in comparison with GaN on GaN diode.

    DOI: 10.1016/j.jcrysgro.2018.11.011

  • 24.5% efficient GaAs p-on-n solar cells with 120 μm h -1 MOVPE growth 査読

    Hassanet Sodabanlu, Akinori Ubukata, Kentaroh Watanabe, Shuichi Koseki, Koh Matsumoto, Takeyoshi Sugaya, Yoshiaki Nakano, Masakazu Sugiyama

    Journal of Physics D: Applied Physics   52 ( 10 )   2019年1月 (   ISSN:0022-3727   eISSN:1361-6463 )

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    掲載種別:研究論文(学術雑誌)  

    © 2019 IOP Publishing Ltd. By enhancing the transport of gas precursors though the chemical boundary layer using a narrow-channel reactor, the growth rate (GR) of GaAs by metal-organic vapor-phase epitaxy has been increased to 120 μm h -1 without saturation with an increase in TMGa supply. The minority hole lifetime in n-GaAs was clearly shortened with an increase in GR from 20 to 120 μm h -1 . Consequently, the short-circuit current density as well as conversion efficiency slightly decreased with an increase in GR. Nevertheless, a conversion efficiency of 24.48% could be realized for a GaAs cell with the n-type base layer grown at 120 μm h -1 .

    DOI: 10.1088/1361-6463/aaf850

  • 8-Ary Stokes-vector signal generation and transmission employing a simplified transmitter 査読

    Samir Ghosh, Shota Ishimura, Takahiro Suganuma, Takuo Tanemura, Yoshiaki Nakano

    Optics InfoBase Conference Papers   Part F129-CLEO_SI 2019   2019年

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    掲載種別:研究論文(国際会議プロシーディングス)  

    © 2019 The Author(s) We experimentally demonstrate a simple straight-line configuration of Stokes vector modulator with two cascaded phase modulators. Three-dimensional 8-ary Stokes-vector-modulated signal is generated at 30 Gb/s and transmitted over a 50-km dispersion-compensated single-mode fiber.

    DOI: 10.1364/CLEO_SI.2019.SM3G.4

  • 4-port integrated stokes vector receiver circuit for multi-level 3D signal detection and OSNR monitoring 査読

    Takahiro Suganuma, Samir Ghosh, Yoshiaki Nakano, Takuo Tanemura

    Optics InfoBase Conference Papers   Part F160-OFC 2019   2019年

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    掲載種別:研究論文(国際会議プロシーディングス)  

    © OSA 2019 © 2019 The Author(s) A novel Stokes vector (SV) receiver circuit with 4-port configuration integrated on a compact InP chip is fabricated to demonstrate SV retrieval with various intensity and degree-of-polarization as well as application to in-band OSNR monitoring.

  • Electro-optic polymer surface-normal modulator using silicon high-contrast grating resonator 査読

    Makoto Ogasawara, Yuji Kosugi, Jiaqi Zhang, Yuki Okamoto, Yoshio Mita, Akira Otomo, Yoshiaki Nakano, Takuo Tanemura

    Optics InfoBase Conference Papers   Part F127-CLEO_AT 2019   2019年

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    掲載種別:研究論文(国際会議プロシーディングス)  

    © 2019 The Author (s) A surface-normal optical modulator using electro-optic polymer embedded inside a 570-nm-thick silicon high-contrast-grating resonator is fabricated. With a voltage applied to silicon grating, we obtain >20% intensity modulation of the transmitted light at 30 MHz.

    DOI: 10.1364/CLEO_AT.2019.JTh2A.48

  • Effective mobility map for InGaP/InGaP multiple quantum-well-based solar cells 査読

    Hsiang Hung Huang, Kasidit Toprasertpong, Amaury Delamarre, Justin Zenas Sun, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano

    Proceedings of SPIE - The International Society for Optical Engineering   10913   2019年 (   ISSN:0277-786X   eISSN:1996-756X )

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    掲載種別:研究論文(国際会議プロシーディングス)  

    © 2019 SPIE. InGaP top cell often limits the efficiency of multi-junction solar cells. Its efficiency is expected to increase by introducing strain-balanced In1-xGaxP/In1-yGayP multiple-quantum-wells since the concentration of photoexcited carriers into the wells enhances radiative recombination. To keep carrier collection efficiency to be similar to the case of a bulk InGaP cell, effective mobilities of carriers through the cascaded quantum wells are evaluated. The critical mobilities for maintaining good carrier transport as a photovoltaic device are discussed, which provides a general design principle for the multiplequantum- well architecture.

    DOI: 10.1117/12.2508592

  • Effects of MOVPE growth parameters on high speed grown InGaP PV 査読

    Hassanet Sodaabnlu, Akinori Ubukata, Kentaroh Watanabe, Takeyoshi Sugaya, Yoshiaki Nakano, Masakazu Sugiyama

    2019 COMPOUND SEMICONDUCTOR WEEK (CSW)   2019年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

  • Ghost imaging using a large-scale silicon photonic phased array chip 査読

    Optics Express   27 ( 3 )   3817 - 3823   2019年

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    記述言語:日本語   掲載種別:研究論文(学術雑誌)  

  • Low-cost transceivers for multi-dimensional Stokes-vector and coherent transmission systems 査読

    Shota Ishimura, Kosuke Nishimura, Yoshiaki Nakano, Takuo Tanemura

    Optics InfoBase Conference Papers   Part F138-ACPC 2019   2019年

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    掲載種別:研究論文(国際会議プロシーディングス)  

    Asia Communications and Photonics Conference (ACP) © OSA 2019 © 2019 The Author(s) In this invited paper, we report our recent progresses for SVM-based systems. The results show that the technologies for the SVM format can simplify not only the advanced DD systems, but also the coherent systems.

  • Integrated reconfigurable 4×4 optical unitary converter using multiport directional couplers 査読

    Ryota Tanomura, Rui Tang, Samir Ghosh, Takuo Tanemura, Yoshiaki Nakano

    Optics InfoBase Conference Papers   Part F160-OFC 2019   2019年

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    掲載種別:研究論文(国際会議プロシーディングス)  

    © OSA 2019 © 2019 The Author(s) We demonstrate novel silicon photonic 4×4 reconfigurable optical unitary converter, comprising multiport directional couplers and phase shifter arrays. By optimizing the phase shift with simulated annealing algorithm, reconfigurable mode sorting and switching are experimentally realized.

  • Large-scale silicon photonic phased array chip for single-pixel ghost imaging 査読

    Yusuke Kohno, Kento Komatsu, Yasuyuki Ozeki, Yoshiaki Nakano, Takuo Tanemura

    Optics InfoBase Conference Papers   Part F160-OFC 2019   2019年

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    掲載種別:研究論文(国際会議プロシーディングス)  

    © OSA 2019 © 2019 The Author(s) We develop large-scale optical phased array (OPA) with 128 phase shifters integrated on a compact silicon chip for single-pixel ghost imaging application. By using speckle illumination pattern generated from OPA, calibration-free robust imaging is demonstrated.

  • Monolithic InP 4*4 optical unitary converter for all-optical MIMO demultiplexing 査読

    Ryota Tanomura, Rui Tang, Takuo Tanemura, Yoshiaki Nakano

    IET Conference Publications   2019 ( CP765 )   2019年

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    掲載種別:研究論文(国際会議プロシーディングス)  

    © 2019 Institution of Engineering and Technology. All rights reserved. We fabricate and experimentally demonstrate 4u4 optical unitary mode converter monolithically integrated on InP. Based on the multi-plane light conversion concept, reconfigurable 4-mode sorting and switching are demonstrated. We also observed clear eye opening of 40-Gb/s non-return-to-zero signal.

  • Photoluminescence of InGaAs/GaAs Quantum Nanodisk in Pillar Fabricated by Biotemplate, Dry Etching, and MOVPE Regrowth 査読

    Akio Higo, Takayuki kiba, Junichi Takayama, Chang Yong Lee, Cedric Thomas, Takuya Ozaki, Hassanet Sodabanlu, Masakazu Suikyama, Yoshiaki Nakano, Ichiro Yamashita, Akihiro Murayama, Seiji Samukawa

    ACS Applied Electronic Materials   1   1945 - 1951   2019年

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    掲載種別:研究論文(学術雑誌)  

  • Stokes vector modulation and detection with monolithic InP photonic integrated circuits 査読

    Yoshiaki Nakano, Takuo Tanemura, Samir Ghosh, Mohiyuddin Kazi

    Optics InfoBase Conference Papers   Part F160-OFC 2019   2019年

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    掲載種別:研究論文(国際会議プロシーディングス)  

    OFC 2019 © OSA 2019 © 2019 The Author(s) Stokes-vector modulation direct-detection (SVM-DD) formats are expected as cost-effective methods to transmit multi-level signals in short-reach links. In this talk we review our novel SV modulator and receiver circuits realized on monolithic InP platforms, which possess compact non-interferometric configurations, relatively simple fabrication procedures, and compatibility with other active photonic components.

  • Double-layer stepped Si(1 0 0) surfaces prepared in As-rich CVD ambience 査読

    Agnieszka Paszuk, Oliver Supplie, Manali Nandy, Sebastian Brückner, Anja Dobrich, Peter Kleinschmidt, Boram Kim, Yoshiaki Nakano, Masakazu Sugiyama, Thomas Hannappel

    Applied Surface Science   462   1002 - 1007   2018年12月 (   ISSN:0169-4332 )

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    掲載種別:研究論文(学術雑誌)  

    © 2018 Elsevier B.V. Low-defect III-V integration on Si(1 0 0) requires atomically well-ordered heterointerfaces. To this end, we study the interaction of As with Si(1 0 0) surfaces and the formation of dimerized Si(1 0 0):As surfaces in situ with reflection anisotropy spectroscopy during metalorganic chemical vapor deposition (MOCVD). Control of surface processes allows us to intentionally ‘rotate’ the dimer orientation and choose between predominantly (1 × 2) and (2 × 1) reconstructed Si(1 0 0):As surfaces both for low and higher surface misorientation. We also verify that the (2 × 1) surface reconstruction becomes energetically more favorable for vicinal Si(1 0 0):As surfaces. We explain the preparation of Si(1 0 0):As surfaces displaying an almost single-domain, (1 × 2) reconstructed surface with an RMS roughness ≤1 Å and exhibiting broad, atomically flat terraces as well as regular double-layer steps. This surface is highly suitable for subsequent low-defect III-V integration.

    DOI: 10.1016/j.apsusc.2018.07.181

  • Electrical tuning of metal-insulator-metal metasurface with electro-optic polymer 査読

    Zhang Jiaqi, Kosugi Yuji, Otomo Akira, Ho Ya-Lun, Delaunay Jean-Jacques, Nakano Yoshiaki, Tanemura Takuo

    APPLIED PHYSICS LETTERS   113 ( 23 )   2018年12月 (   ISSN:0003-6951 )

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    掲載種別:研究論文(学術雑誌)  

    DOI: 10.1063/1.5054964

  • An InP-based vortex beam emitter with monolithically integrated laser 査読

    Juan Zhang, Changzheng Sun, Bing Xiong, Jian Wang, Zhibiao Hao, Lai Wang, Yanjun Han, Hongtao Li, Yi Luo, Yi Xiao, Chuanqing Yu, Takuo Tanemura, Yoshiaki Nakano, Shimao Li, Xinlun Cai, Siyuan Yu

    Nature Communications   9 ( 1 )   2018年12月 (     eISSN:2041-1723 )

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    掲載種別:研究論文(学術雑誌)  

    © 2018 The Author(s). Semiconductor devices capable of generating a vortex beam with a specific orbital angular momentum (OAM) order are highly attractive for applications ranging from nanoparticle manipulation, imaging and microscopy to fiber and quantum communications. In this work, an electrically pumped integrated OAM emitter operating at telecom wavelengths is fabricated by monolithically integrating an optical vortex emitter with a distributed feedback laser on the same InGaAsP/InP epitaxial wafer. A single-step dry-etching process is adopted to complete the OAM emitter, equipped with specially designed top gratings. The vortex beam emitted by the integrated device is captured and its OAM mode purity characterized. The integrated OAM emitter eliminates the external laser required by silicon- or silicon-on-insulator-based OAM emitters, thus demonstrating great potential for applications in communication systems and the quantum domain.

    DOI: 10.1038/s41467-018-05170-z

  • Double-layer stepped Si(100) surfaces prepared in As-rich CVD ambience 査読

    Agnieszka Paszuk, Oliver Supplie, Manali Nandy, Sebastian Brueckner, Anja Dobrich, Peter Kleinschmidt, Boram Kim, Yoshiaki Nakano, Masakazu Sugiyama, Thomas Hannappel

    APPLIED SURFACE SCIENCE   462   1002 - 1007   2018年12月 (   ISSN:0169-4332   eISSN:1873-5584 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:ELSEVIER SCIENCE BV  

    Low-defect III-V integration on Si(1 0 0) requires atomically well-ordered heterointerfaces. To this end, we study the interaction of As with Si(1 0 0) surfaces and the formation of dimerized Si(1 0 0): As surfaces in situ with reflection anisotropy spectroscopy during metalorganic chemical vapor deposition (MOCVD). Control of surface processes allows us to intentionally 'rotate' the dimer orientation and choose between predominantly (1x2) and (2x1) reconstructed Si(1 0 0): As surfaces both for low and higher surface misorientation. We also verify that the (2x1) surface reconstruction becomes energetically more favorable for vicinal Si(1 0 0): As surfaces. We explain the preparation of Si(1 0 0): As surfaces displaying an almost single-domain, (1x2) reconstructed surface with an RMS roughness <= 1 angstrom and exhibiting broad, atomically flat terraces as well as regular double-layer steps. This surface is highly suitable for subsequent low-defect III-V integration.

    DOI: 10.1016/j.apsusc.2018.07.181

  • As-modified Si(100) Surfaces for III-V-on-Si Tandem Solar Cells 査読

    Agnieszka Paszuk, Oliver Supplie, Manali Nandy, Sebastian Brückner, Anja Dobrich, Peter Kleinschmidt, Boram Kim, Yoshiaki Nakano, Masakazu Sugiyama, Thomas Hannappel

    2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC   233 - 236   2018年11月

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    掲載種別:研究論文(国際会議プロシーディングス)  

    © 2018 IEEE. In order to avoid formation of antiphase domains at the III-V/Si interface, which significantly can reduce the performance of photovoltaic devices, the Si(100) surface requires precise, double-atomic-step preparation. Here, we study the interaction of Si(100) surfaces with As, which is present in most application-relevant III-V MOCVD reactors, in dependence of the miscut magnitude. Combining optical in situ spectroscopy with ultra-high-vacuum-based surface analysis, we yield control over the dimer orientation on the Si:As surfaces. We demonstrate both (1x2) and (2x1) reconstructed surfaces, and atomically smooth Si(100):As 0.1° surfaces with evenly spaced, doubleatomic steps, which are highly suitable for subsequent III-V integration.

    DOI: 10.1109/PVSC.2018.8547817

  • Comparison of Effective Carrier Mobility between Wire on Well and Multiple Quantum Well by Time of Flight Measurement 査読

    Meita Asami, Kasidit Toprasertpong, Kentaroh Watanabe, Yoshiaki Nakano, Yoshitaka Okada, Masakazu Sugiyama

    2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC   2861 - 2864   2018年11月

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    掲載種別:研究論文(国際会議プロシーディングス)  

    © 2018 IEEE. According to the prior researches, the Carrier Collection Efficiency (CCE) of the solar cell containing Wire on Well (WoW) is higher than that of containing Multiple Quantum Well (MQW), and the carrier lifetime of WoW is longer than that of MQW; few studies, however, have focused on the effective carrier mobility of WoW. We evaluated the mobility of nano-structures and revealed that the carrier mobility of WoW is higher than that of MQW.

    DOI: 10.1109/PVSC.2018.8548262

  • Impacts of V/III ratio on the quality and performance of GaAs p-n solar cells by ultrafast MOVPE 査読

    Hassanet Sodabanlu, Akinori Ubukata, Kentaroh Watanabe, Takeyoshi Sugaya, Yoshiaki Nakano, Masakazu Sugiyama

    2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC   249 - 252   2018年11月

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    掲載種別:研究論文(国際会議プロシーディングス)  

    © 2018 IEEE. Effects of V/III ratio on the quality of GaAs and performance of p-n solar cells grown at extremely high growth rates have been investigated. Under a growth rate of 90 μm/h, the decrease in V/III ratio from 40 to 20, 10 and 5 did not obviously affect the quality of GaAs; no change was detectable by AFM, XRD, and time-resolved PL as the extent of degradation might be out of detectable range. However, the background p-type doping concentration, most likely due to carbon impurity increased from 2.1x10 16 to 3.2x10 16 and 8.4x10 16 cm -3 with reduces in V/III ratio from 20 to 10 and 5, respectively. Meanwhile, the sample grown with the V/III ratio of 40 showed a semi-insulating behavior. In addition, the performance of GaAs p-on-n cells was remarkably reduced when the V/III ratio during the growth of 90-μm /h grown n-base layer was decreased from 20 to 10 and 5. Background impurities including carbon were considered as a reason for this degradation. The uniformity of cell efficiency was also degraded with a lower V/III ratio.

    DOI: 10.1109/PVSC.2018.8547263

  • Transport efficiency imaging in multi-junction solar cells by luminescence analysis 査読

    Hao Xu, Amaury Delamarre, Jieyang Jia, Bernice Mae F.Yu Jeco, Kentaroh Watanabe, Yoshitaka Okada, Jean Francois Guillemoles, Yoshiaki Nakano, Masakazu Sugiyama

    2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC   2261 - 2265   2018年11月

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    掲載種別:研究論文(国際会議プロシーディングス)  

    © 2018 IEEE. Multi-junction solar cells are currently the efficiency leaders among all types of solar cells. However, efficiencies of multi-junction solar cells are limited by various series resistance when they are illuminated under high concentrations. In this paper, we provide a robust method to obtain the current transport efficiency mapping for a precise and rapid measurement of resistance effect using luminescence characterization. We verified the method on a triple-junction solar cell with illuminations on all subcells. The results successfully matched with both electrical measurement and simulation results. Light beam induced current (LBIC) measurement is used for the first time to compare with the luminescence mapping. Both methods show a similar profile of transport efficiency.

    DOI: 10.1109/PVSC.2018.8548208

  • Gain Coupled 4×25 Gb/s EML Array Based on Identical Epitaxial Layer Scheme 査読

    Shuhan Yang, Changzheng Sun, Bing Xiong, Jian Wang, Yi Luo, Zhibiao Hao, Yanjun Han, Lai Wang, Hongtao Li, Takuo Tanemura, Yoshiaki Nakano

    Conference Digest - IEEE International Semiconductor Laser Conference   2018-September   55 - 56   2018年10月 (   ISSN:0899-9406 )

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    掲載種別:研究論文(国際会議プロシーディングス)  

    © 2018 IEEE. Gain-coupled 4 ×25 Gb/s EML array is implemented by identical epitaxial layer integration scheme. The device exhibits excellent single-mode performance, high extinction ratio, and a modulation bandwidth over 28 GHz, making it suitable for 100GbE applications.

    DOI: 10.1109/ISLC.2018.8516163

  • Waveguide Coupling of Wavelength-Scale Capsule-Shaped Metal-Clad Laser 査読

    Yi Xiao, Mitsuhiro Watanabe, Yuguang Wang, Takuo Tanemura, Yoshiaki Nakano

    Conference Digest - IEEE International Semiconductor Laser Conference   2018-September   173 - 174   2018年10月 (   ISSN:0899-9406 )

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    掲載種別:研究論文(国際会議プロシーディングス)  

    © 2018 IEEE. We propose a new approach of coupling light into a waveguide from a wavelength-scale capsule-shaped metal-clad laser. Numerical analysis shows that coupling efficiency can be readily tuned by changing the width of the adjacent taper waveguide. Spontaneous emission is observed from a waveguide of a fabricated device.

    DOI: 10.1109/ISLC.2018.8516222

  • Surface Grating Fabrication by Inductively Coupled Plasma Dry Etching for InP-Based Photonic Integrated Circuits 査読

    Juan Zhang, Changzheng Sun, Bing Xiong, Yanzhen Zheng, Jian Wang, Zhibiao Hao, Lai Wang, Yanjun Han, Hongtao Li, Yi Luo, Yi Xiao, Chuanqing Yu, Takuo Tanemura, Yoshiaki Nakano

    Physica Status Solidi (A) Applications and Materials Science   215 ( 18 )   2018年9月 (   ISSN:1862-6300   eISSN:1862-6319 )

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    掲載種別:研究論文(学術雑誌)  

    © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Surface gratings are widely used in photonic integrated circuits (PICs). In this paper, the authors study the fabrication of surface gratings on indium phosphide (InP) based materials by inductively coupled plasma (ICP) dry etching. The etching parameters are optimized to achieve high aspect ratio while maintaining excellent surface morphology. A novel processing technique is presented for surface grating formation on top of a deeply etched ridge waveguide by taking advantages of the lag effect. Fine structures with non-uniform height can be completed in a single-step ICP dry etching, thus greatly simplifying the fabrication by eliminating the demanding overlay process. The method is believe to be valuable for the fabrication of a variety of PICs containing hyperfine structures.

    DOI: 10.1002/pssa.201800406

  • Growth of InGaAs(P) in planetary metalorganic vapor phase epitaxy reactor using tertiarybutylarsine and tertiarybutylphosphine for photovoltaic applications 査読

    Hassanet Sodabanlu, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano

    Japanese Journal of Applied Physics   57 ( 8 )   2018年8月 (   ISSN:0021-4922   eISSN:1347-4065 )

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    掲載種別:研究論文(国際会議プロシーディングス)  

    © 2018 The Japan Society of Applied Physics. The effects of wafer (surface) temperature on the surface morphologies of InP, InGaAsP, and InGaAs grown in a planetary metalorganic vapor phase epitaxy (MOVPE) reactor using tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) as group V precursors were investigated. Compared with small horizontal reactors, InP growths require a relatively low temperature to prevent TBP predecomposition and parasitic gas-phase reactions. However, such a low temperature can prevent the surface migration of In adatoms and degrade surface morphology, especially when a substantial amount of Ga precursors is present. Hence, growths of InGaAs require a higher temperature than that of InP and InGaAsP. In this work, 1.04 eV In0.79Ga0.21As0.46P0.54 and 0.74 eV In0.53Ga0.47As single-junction cells as well as InGaAsP/InGaAs dual-junction solar cells have been successfully fabricated. The cell performances reveal that InGaAs layers grown at 590 °C exhibit great crystal quality, while 550-°C-grown InGaAsP layers contain a noticeable extent of defect density and lattice imperfection.

    DOI: 10.7567/JJAP.57.08RD09

  • Growth of InGaAs(P) in planetary metalorganic vapor phase epitaxy reactor using tertiarybutylarsine and tertiarybutylphosphine for photovoltaic applications 査読

    Hassanet Sodabanlu, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano

    JAPANESE JOURNAL OF APPLIED PHYSICS   57 ( 8 )   2018年8月 (   ISSN:0021-4922   eISSN:1347-4065 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IOP PUBLISHING LTD  

    The effects of wafer (surface) temperature on the surface morphologies of InP, InGaAsP, and InGaAs grown in a planetary metalorganic vapor phase epitaxy (MOVPE) reactor using tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) as group V precursors were investigated. Compared with small horizontal reactors, InP growths require a relatively low temperature to prevent TBP predecomposition and parasitic gas-phase reactions. However, such a low temperature can prevent the surface migration of In adatoms and degrade surface morphology, especially when a substantial amount of Ga precursors is present. Hence, growths of InGaAs require a higher temperature than that of InP and InGaAsP. In this work, 1.04 eV In0.79Ga0.21As0.46P0.54 and 0.74 eV In0.53Ga0.47As single-junction cells as well as InGaAsP/InGaAs dual-junction solar cells have been successfully fabricated. The cell performances reveal that InGaAs layers grown at 590 degrees C exhibit great crystal quality, while 550-degrees C-grown InGaAsP layers contain a noticeable extent of defect density and lattice imperfection. (C) 2018 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.57.08RD09

  • Compact InP stokes-vector modulator and receiver circuits for short-reach direct-detection optical links 査読

    Takuo Tanemura, Yoshiaki Nakano

    IEICE Transactions on Electronics   E101C ( 7 )   594 - 601   2018年7月 (   ISSN:0916-8524   eISSN:1745-1353 )

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    掲載種別:研究論文(国際会議プロシーディングス)  

    © Copyright 2018 The Institute of Electronics, Information and Communication Engineers. To meet the demand for continuous increase in data traffic, full usage of polarization freedom of light is becoming inevitable in the next-generation optical communication and datacenter networks. In particular, Stokes-vector modulation direct-detection (SVM-DD) formats are expected as potentially cost-effective method to transmit multi-level signals without using costly coherent transceivers in the short-reach links. For the SVM-DD formats to be practical, both the transmitter and receiver need to be substantially simpler, smaller, and lower-cost as compared to coherent counterparts. To this end, we have recently proposed and demonstrated novel SV modulator and receiver circuits realized on monolithic InP platforms. With compact non-interferometric configurations, relatively simple fabrication procedures, and compatibility with other active photonic components, the proposed devices should be attractive candidate in realizing low-cost monolithic transceivers for SVM formats. In this paper, we review our approaches as well as recent progresses and provide future prospects.

    DOI: 10.1587/transele.E101.C.594

  • GaAsP/Si tandem solar cells: Realistic prediction of efficiency gain by applying strain-balanced multiple quantum wells 査読

    Boram Kim, Kasidit Toprasertpong, Agnieszka Paszuk, Oliver Supplie, Yoshiaki Nakano, Thomas Hannappel, Masakazu Sugiyama

    Solar Energy Materials and Solar Cells   180   303 - 310   2018年6月 (   ISSN:0927-0248 )

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    掲載種別:研究論文(学術雑誌)  

    © 2017 Elsevier B.V. The combination of tunable direct bandgap III-V absorbers with active Si substrates promises high-efficiency tandem solar cells. To yield the ideal III-V bandgaps between 1.6 and 1.8 eV which is considered to achieve current matching with the Si bottom-cell, however, either a big lattice-mismatch or dilute nitrides had to be considered so far. Here, we propose a new structure for a two-terminal III-V-on-Si solar cell which bases on strain-balanced III-V multi-quantum wells (MQWs) embedded in a metamorphic GaAsP top-cell matrix. Strain-balanced MQWs extend the absorption edge to a longer wavelength and enable a reduction of the As content in the GaAsP metamorphic top-cell matrix. And accumulation of carriers in MQWs favors radiative recombination, which is beneficial for high efficiency while deep quantum wells lower the charge carrier collection efficiency. Here, we predict solar energy conversion efficiencies over 42.6% with an entire MQW as thin as 500 nm. The applied model takes into account the drawbacks of MQWs, such as limited light absorption and the bottleneck of charge carrier collection from the confinement.

    DOI: 10.1016/j.solmat.2017.06.060

  • GaAsP/Si tandem solar cells: In situ study on GaP/Si:As virtual substrate preparation 査読

    Agnieszka Paszuk, Oliver Supplie, Boram Kim, Sebastian Brückner, Manali Nandy, Alexander Heinisch, Peter Kleinschmidt, Yoshiaki Nakano, Masakazu Sugiyama, Thomas Hannappel

    Solar Energy Materials and Solar Cells   180   343 - 349   2018年6月 (   ISSN:0927-0248 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Elsevier B.V.  

    Realization of high efficiency III-V-on-Si solar cells requires preparation of an oxygen free Si substrate surface, which allows for subsequent antiphase domain free III-V epitaxy. For GaAsP/Si tandem cells, the impact of As on established Si processing in metal organic vapor phase epitaxy (MOVPE) is essential. Here, we study the interaction of As with vicinal Si(100) surfaces, the formation of atomically well-ordered As-modified Si(100) surfaces, and its impact on subsequently grown GaP epilayers. We apply optical in situ spectroscopy during MOVPE and show that process routes strongly affect the formation of double-layer steps on Si(100). We demonstrate that exposure to As, together with HF pre-treatment, enables processing of suitable Si(100) 2° and 6° offcut surfaces at temperatures below 820 °C. Subsequently grown GaP epilayers exhibit smooth surfaces free of antiphase disorder and distinct Laue oscillations in X-ray diffraction. Such low temperature processing, which is controllable in situ, is promising for further metamorphic GaAsP integration.

    DOI: 10.1016/j.solmat.2017.07.032

  • Reconfigurable 3-channel all-optical MIMO circuit on silicon based on multi-plane light conversion 査読

    Rui Tang, Takuo Tanemura, Samir Ghosh, Keijiro Suzuki, Ken Tanizawa, Kazuhiro Ikeda, Hitoshi Kawashima, Yoshiaki Nakano

    2018 Optical Fiber Communications Conference and Exposition, OFC 2018 - Proceedings   1 - 3   2018年6月

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    掲載種別:研究論文(国際会議プロシーディングス)  

    © 2018 OSA. We demonstrate reconfigurable all-optical MIMO demultiplexing on a compact silicon chip. 3-mode demultiplexing is realized experimentally with wavelength-dependent loss less than 3 dB and modal crosstalk less than -13 dB over 26-nm optical bandwidth.

  • Thin-film multiple-quantum-well solar cells fabricated by epitaxial lift-off process 査読

    Nakata Tatsuya, Watanabe Kentaroh, Miyashita Naoya, Sodabanlu Hassanet, Giteau Maxime, Nakano Yoshiaki, Okada Yoshitaka, Sugiyama Masakazu

    Jpn. J. Appl. Phys.   57 ( 8S3 )   08RF03-1 - 08RF03-5   2018年6月 (   ISSN:0021-4922 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Institute of Physics  

    Thin-film solar cells fabricated using the epitaxial lift-off (ELO) process enable considerable cost reduction as well as light-trapping. A polyimide film was used as a support substrate for thin film devices to address the poor temperature tolerance of poly(ethylene terephthalate) films. Samples were stuck to polyimide films by an Au–Au bonding process. It was found that the insertion of a wetting layer enhanced the adhesion between a polyimide film and an Au layer. The achieved bonding was strong enough to carry out the ELO process, and no degradation was observed in cell performance. Thin-film solar cells with strain-balanced multiple quantum wells were also fabricated using the ELO process to benefit from the light-trapping effect. Quantum efficiency enhancement was observed in the long-wavelength range of 850–980 nm compared to the non-ELO-processed devices. The photo-absorption enhancement was due to the Fabry–Perot resonance between the surface and the rear Au electrodes.

    DOI: 10.7567/JJAP.57.08RF03

  • Accelerated GaAs growth through MOVPE for low-cost PV applications 査読

    Akinori Ubukata, Hassanet Sodabanlu, Kentaroh Watanabe, Shuichi Koseki, Yoshiki Yano, Toshiya Tabuchi, Takeyoshi Sugaya, Koh Matsumoto, Yoshiaki Nakano, Masakazu Sugiyama

    Journal of Crystal Growth   489   63 - 67   2018年5月 (   ISSN:0022-0248 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Elsevier B.V.  

    The high growth rate of epitaxial GaAs was investigated using a novel horizontal metalorganic vapor phase epitaxy (MOVPE) reactor, from the point of view of realizing low-cost photovoltaic (PV) solar cells. The GaAs growth rate exhibited an approximately linear relationship with the amount of trimethylgalium (TMGa) supplied, up to a rate of 90 μm/h. The distribution of growth rate was observed for a two-inch wafer, along the flow direction, and the normalized profile of the distribution was found to be independent of the precursor input, from 20 to 70 μm/h. These tendencies indicated that significant parasitic prereaction did not occur in the gaseous phase, for this range of growth rate. GaAs p-n single-junction solar cells were successfully fabricated at growth rates of 20, 60, and 80 µm/h. The conversion efficiency of the cell grown at 80 µm/h was comparable to that of the 20 µm/h cell, indicating the good quality and properties of GaAs. The epitaxial growth exhibited good uniformity, as evidenced by the uniformity of the cell performance across the wafer, from the center to the edge. The result indicated the potential of high-throughput MOVPE for low-cost production, not only for PV devices but also for other semiconductor applications.

    DOI: 10.1016/j.jcrysgro.2018.02.033

  • Extremely High-Speed GaAs Growth by MOVPE for Low-Cost PV Application 査読

    Hassanet Sodabanlu, Akinori Ubukata, Kentaroh Watanabe, Takeyoshi Sugaya, Yoshiaki Nakano, Masakazu Sugiyama

    IEEE Journal of Photovoltaics   8 ( 3 )   887 - 894   2018年5月 (   ISSN:2156-3381 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEEE Electron Devices Society  

    Epitaxial growth of GaAs in a horizontal metalorganic vapor phase epitaxy reactor was investigated to realize ultrafast growth rate, which has been demonstrated to be 90 μm/h at maximum. The GaAs growth rate had more or less a linear relationship with the amount of trimethylgallium supply. With extremely fast deposition &gt
    70 μm/h, slight saturation of growth rate was observed, which is most likely due to parasitic gas-phase reactions and/or limitation in bubbling. The impact of growth rates was examined using GaAs p-n solar cells, with the 2-μm-thick n-GaAs base layers grown at 20, 60, and 80 μm/h. The studies have not evidenced a significant change in performance as a function of growth rate. The base thickness was expanded to 3.5 μm with the growth rate of 80 μm/h to increase light absorption. The growth rate of 80 μm/h did not induce significant degradation in the efficiency of the cells as compared with the ones grown at 20 and 60 μm/h. The average efficiency of 23.6% (16.3% on the basis of a mesa area) under AM1.5G was realized in the cells with 3.5-μm-thick bases grown at 80 μm/h.

    DOI: 10.1109/JPHOTOV.2018.2814919

  • Fully Integrated Stokes Vector Receiver with MQW-based Photodetectors on InP 査読

    Takahiro Suganuma, Samir Ghosh, Mohiyuddin Kazi, Ryoma Kobayashi, Yoshiaki Nakano, Takuo Tanemura

    European Conference on Optical Communication, ECOC   2017-   1 - 3   2018年4月

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:Institute of Electrical and Electronics Engineers Inc.  

    We fabricate and experimentally demonstrate a compact direct-detection-based Stokes vector (SV) receiver with on-chip photodetector (PD). Compressively strained multiple-quantum-well PD array is monolithically integrated on InP-based passive polarization-converting circuit to retrieve SV of input light from the photocurrent signals.

    DOI: 10.1109/ECOC.2017.8345838

  • Reconfigurable all-optical on-chip MIMO three-mode demultiplexing based on multi-plane light conversion 査読

    Rui Tang, Takuo Tanemura, Samir Ghosh, Keijiro Suzuki, Ken Tanizawa, Kazuhiro Ikeda, Hitoshi Kawashima, Yoshiaki Nakano

    Optics Letters   43 ( 8 )   1798 - 1801   2018年4月 (   ISSN:1539-4794 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:OSA - The Optical Society  

    We present, to the best of our knowledge, the first experimental demonstration of reconfigurable all-optical on-chip multi-input-multi-output three-mode demultiplexing based on multi-plane light conversion. The demultiplexer consists of cascaded phase shifter arrays and multimode interference couplers integrated on a compact silicon chip. By optimizing the phase shifters, reconfigurable three-mode demultiplexing is experimentally realized with wavelength-dependent loss of less than 3 dB and modal crosstalk of less than −10 dB over a 23 nm optical bandwidth. Error-free mode demultiplexing of 40 Gbps non-return-to-zero signal is also demonstrated.

    DOI: 10.1364/OL.43.001798

  • Material challenges for solar cells in the twenty-first century: directions in emerging technologies 査読

    Almosni Samy, Delamarre Amaury, Jehl Zacharie, Suchet Daniel, Cojocaru Ludmila, Giteau Maxime, Behaghel Benoit, Julian Anatole, Ibrahim Camille, Tatry Lea, Wang Haibin, Kubo Takaya, Uchida Satoshi, Segawa Hiroshi, Miyashita Naoya, Tamaki Ryo, Shoji Yasushi, Yoshida Katsuhisa, Ahsan Nazmul, Watanabe Kentaro, Inoue Tomoyuki, Sugiyama Masakazu, Nakano Yoshiaki, Hamamura Tomofumi, Toupance Thierry, Olivier Celine, Chambon Sylvain, Vignau Laurence, Geffroy Camille, Cloutet Eric, Hadziioannou Georges, Cavassilas Nicolas, Rale Pierre, Cattoni Andrea, Collin Stephane, Gibelli Francois, Paire Myriam, Lombez Laurent, Aureau Damien, Bouttemy Muriel, Etcheberry Arnaud, Okada Yoshitaka, Guillemoles Jean-Francois

    SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS   19 ( 1 )   336 - 369   2018年4月 (   ISSN:1468-6996 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1080/14686996.2018.1433439

  • Monolithic InP Stokes Vector Receiver with Multiple-Quantum-Well Photodetectors 査読

    Takahiro Suganuma, Samir Ghosh, Mohiyuddin Kazi, Ryoma Kobayashi, Yoshiaki Nakano, Takuo Tanemura

    Journal of Lightwave Technology   36 ( 5 )   1268 - 1274   2018年3月 (   ISSN:0733-8724 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Institute of Electrical and Electronics Engineers Inc.  

    Stokes vector modulation direct-detection (SVM-DD) formats have attained special attention in the short-reach communication links to transmit multilevel signals without using costly coherent receivers. In this paper, we fabricate and experimentally demonstrate a potentially low-cost DD-based SV receiver with on-chip photodetectors (PD) on a compact InP chip. Compressively strained multiple-quantum-well PD array is monolithically integrated with the SV projection circuit, which consists of multimode interference splitter and SV rotators based on self-aligned half-ridge structure. From the photocurrent signals at three on-chip PDs, the SV of input light is retrieved successfully over the entire Poincaré sphere. With potentially broad operating bandwidth of InP-based PDs, the demonstrated device may be an attractive candidate to realize low-cost and high-speed receivers for the future short-reach SVM-DD systems.

    DOI: 10.1109/JLT.2017.2780905

  • Decoding of Multilevel Stokes-Vector Modulated Signal by Polarization-Analyzing Circuit on InP 査読

    Samir Ghosh, Takuo Tanemura, Yuto Kawabata, Kazuhiro Katoh, Kazuro Kikuchi, Yoshiaki Nakano

    Journal of Lightwave Technology   36 ( 2 )   187 - 194   2018年1月 (   ISSN:0733-8724 )

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    掲載種別:研究論文(学術雑誌)  

    © 2018 IEEE. Of-late research on Stokes vector receivers for the short-reach optical communications has gained significant attention due to its capability to decode information in multidimension using cost-effective direct-detection technique. Here, we consider the use of InP for potentially low-cost direct-detection-based Stokes vector (SV) receiver. It consists of a 1 × 4 multimode interference power splitter with different combination of polarization converters on output arms, so that input SV is projected onto distinct vectors on the Stokes space. By using the fabricated device, we experimentally demonstrate decoding of two-level and four-level SV-modulated signals at 3 Gbaud. With the potential of monolithically integrating high-speed InP photodetector array on the same chip, it paves the way to realize compact and low-cost SV receivers for multilevel SV modulation formats in future short-reach optical communication links.

    DOI: 10.1109/JLT.2018.2791623

  • Investigation and modeling of photocurrent collection process in multiple quantum well solar cells 査読

    Kasidit Toprasertpong, Tomoyuki Inoue, Yoshiaki Nakano, Masakazu Sugiyama

    Solar Energy Materials and Solar Cells   174   146 - 156   2018年1月 (   ISSN:0927-0248 )

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    掲載種別:研究論文(学術雑誌)  

    © 2017 Elsevier B.V. Solar cells employing quantum wells can enhance the light absorption but suffer from the difficulty in photocarrier extraction. Here, we analyzed the spectral response and the photocarrier collection mechanism of p-i-n multiple quantum well (MQW) solar cells using the effective-mobility model. Both the simulation and experimental results imply that the spatial profiles of electron and hole densities in MQWs play an important role in the carrier collection process. By considering the recombination increment under illumination, our findings suggest that the concept of the majority/minority carriers is important even in the intrinsic region: photogenerated electrons and holes only experience significant recombination when passing through the hole-rich and electron-rich regions, respectively. This can accurately explain the photocurrent behavior in cells with background doping, background illumination, and different MQW positions. Based on the experimental findings, we derived analytical formulae for carrier collection efficiency, which directly show the impact of each cell parameter and can be used for the systematic cell design.

    DOI: 10.1016/j.solmat.2017.08.036

  • Characterization of InGaAs/GaAsN multiple quantum well with flat conduction band for improving carrier transport in multijuction solar cell 査読

    Waracorn Yanwachirakul, Naoya Miyashita, Hassanet Sodabanlu, Kentaroh Watanabe, Yoshitaka Okada, Masakazu Sugiyama, Yoshiaki Nakano

    Proc. SPIE   10527   10527E   2018年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1117/12.2296574

  • Analytic Approach for Global Structure Optimization of Multiple Quantum Well Solar Cells 査読

    Kasidit Toprasertpong, Yoshiaki Nakano, Masakazu Sugiyama

    2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC)   2946 - 2949   2018年 (   ISSN:2159-2330   eISSN:2159-2349 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    The effective mobility model is proposed as a convenient tool for the analysis and design of multiple quantum well (MQW) solar cells. The analytical formula for MQW effective mobility and its lower limit for solar cell application are discussed. By plotting MQW bandgap-mobility mappings, the feasible bandgap range of MQWs, in terms of carrier transport, can be analytically estimated for the first time. In this way, the structure optimization of MQW for narrower bandgap, which has been carried out through trail-and-error experiments so far, becomes available through a simple calculation procedure.

  • Experimental Demonstration of Surface-Normal MIM Modulator with Electro-Optic Polymer 査読

    Jiaqi Zhang, Yuji Kosugi, Akira Otomo, Ya-Lun Ho, Jean-Jacques Delaunay, Yoshiaki Nakano, Takuo Tanemura

    2018 PHOTONICS IN SWITCHING AND COMPUTING (PSC)   2018年 (   ISSN:2155-8515 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    We fabricate and experimentally demonstrate a novel metallic metasurface modulator with electro-optic (EO) polymer. By using the resonance of a metal-insulator-metal mode, we efficiently trap surface-normal incident light inside a 540-nm-thick EO polymer layer. Electro-optic modulation of the reflected light is experimentally observed at 1630 nm.

  • Low-temperature InGaAs oxidation using oxygen neutral beam 査読

    Lee, C.-Y., Higo, A., Thomas, C., Okada, T., Ozaki, T., Sugiyama, M., Nakano, Y., Samukawa, S.

    Japanese Journal of Applied Physics   57 ( 7 )   2018年 (   ISSN:0021-4922 )

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    掲載種別:研究論文(学術雑誌)  

    DOI: 10.7567/JJAP.57.070305

  • Monolithically integrated stokes vector modulator based on quantum-confined stark effect 査読

    Mohiyuddin Kazi, Samir Ghosh, Masakazu Sugiyama, Takuo Tanemura, Yoshiaki Nakano

    Optics InfoBase Conference Papers   2018   2018年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:OSA - The Optical Society  

    We demonstrate a monolithically integrated Stokes vector modulator using quantum-confined Stark effect in a simple straight-line configuration. Efficient polarization modulation over Poincare´ sphere is observed by applying reverse-bias voltages to MQW-based polarization-dependent phase modulators.

    DOI: 10.1364/CLEO_SI.2018.SM4B.6

  • Reconfigurable 3-channel all-optical MIMO circuit on silicon based on multi-plane light conversion 査読

    Rui Tang, Takuo Tanemura, Samir Ghosh, Keijiro Suzuki, Ken Tanizawa, Kazuhiro Ikeda, Hitoshi Kawashima, Yoshiaki Nakano

    Optics InfoBase Conference Papers   Part F84-OFC 2018   2018年

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    掲載種別:研究論文(国際会議プロシーディングス)  

    © OSA 2018. We demonstrate reconfigurable all-optical MIMO demultiplexing on a compact silicon chip. 3-mode demultiplexing is realized experimentally with wavelength-dependent loss less than 3 dB and modal crosstalk less than -13 dB over 26-nm optical bandwidth.

    DOI: 10.1364/OFC.2018.W1E.3

  • Robust reconfigurable optical mode mux/demux using multiport directional couplers 査読

    Rui Tang, Takuo Tanemura, Yoshiaki Nakano

    2017 Opto-Electronics and Communications Conference, OECC 2017 and Photonics Global Conference, PGC 2017   2017-   1 - 3   2017年11月

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:Institute of Electrical and Electronics Engineers Inc.  

    We propose a novel reconfigurable integrated optical mode (de)multiplexer using cascaded multiport directional couplers and phase shifter arrays. Large fabrication tolerance and scalability up to 16-mode (de)multiplexing are demonstrated.

    DOI: 10.1109/OECC.2017.8114996

  • Active metasurface modulator with electro-optic polymer using bimodal plasmonic resonance 査読

    Jiaqi Zhang, Yuji Kosugi, Akira Otomo, Yoshiaki Nakano, Takuo Tanemura

    OPTICS EXPRESS   25 ( 24 )   30304 - 30311   2017年11月 (   ISSN:1094-4087 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:OPTICAL SOC AMER  

    Electrically tunable metasurfaces have gained special interest as they can realize ultrathin surface-normal modulators in planar geometries. In this paper, we demonstrate a novel metasurface modulator based on electro-optic (EO) polymer that utilizes bimodal resonance inside a metallic subwavelength grating to increase the modulation efficiency. When two metal-insulator-metal (MIM) resonant modes are excited simultaneously inside the grating, they couple strongly to generate a sharp dip in the reflected spectrum. As a result, efficient intensity modulation with 15-dB extinction ratio can be obtained at the resonant wavelength under a small refractive index change of 8.5 x 10(-3), corresponding to modulation voltage of less than 10 V. Due to the low parasitic capacitance of EO polymer and high conductivity of metallic gratings which is also used as the electrodes, the RC bandwidth of the device should easily exceed 100 GHz, potentially applicable to high-speed surface-normal modulators. (C) 2017 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

    DOI: 10.1364/OE.25.030304

  • High-Speed Carrier-Injection-Based Polarization Controller With InGaAlAs/InAlAs Multiple-Quantum Wells 査読

    Mohiyuddin Kazi, Samir Ghosh, Hassanet Sodabanlu, Kentaro Suzuki, Masakazu Sugiyama, Takuo Tanemura, Yoshiaki Nakano

    IEEE PHOTONICS TECHNOLOGY LETTERS   29 ( 22 )   1951 - 1954   2017年11月 (   ISSN:1041-1135   eISSN:1941-0174 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC  

    We demonstrate a waveguide-based polarization controller that monolithically incorporates an active InGaAlAs/InAlAs multiple-quantum-well phase shifter and a passive half-ridge polarization converter on InP. The butt-joint active/passive integration technique and self-aligned waveguide fabrication steps are employed. Using the fabricated device, efficient rotation of the Stokes vector over pi radian is obtained on the Poincare sphere by injecting 14-mA current to a 1.4-mm-long phase shifter. Dynamic response time below 5 ns is also confirmed, demonstrating the feasibility of low-power high-speed integrated polarization controller on InP.

    DOI: 10.1109/LPT.2017.2757526

  • Reflective semiconductor optical amplifier with segmented electrodes for high-speed self-seeded colorless transmitter 査読

    Peng Zhou, Wenhui Zhan, Masaru Mukaikubo, Yoshiaki Nakano, Takuo Tanemura

    OPTICS EXPRESS   25 ( 23 )   28547 - 28555   2017年11月 (   ISSN:1094-4087 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:OPTICAL SOC AMER  

    A self-seeded reflective semiconductor optical amplifier (RSOA) has been viewed as an attractive candidate for the low-cost colorless transmitter in wavelength-division-multiplexed passive-optical networks (WDM-PON). In this paper, we propose and demonstrate the use of two-section RSOA with segmented electrodes to simultaneously improve the modulation bandwidth and extinction ratio in a self-seeded operation. We first find the optimal driving condition to induce strong modulation cancellation by analyzing the gain dynamics inside the RSOA. In addition, we experimentally confirm the improvement in direct modulation bandwidth by segmenting the electrodes. Finally, we employ the two-section RSOA in a self-seeded system and successfully demonstrate transmission over a 25-km standard single-mode fiber at 5 Gb/s as well as improved back-to-back modulation at 10-Gb/s in C-band by using the optimal driving condition. (C) 2017 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

    DOI: 10.1364/OE.25.028547

  • A broad parameter range for selective methane production with bicarbonate solution in electrochemical CO2 reduction 査読

    Hashiba Hiroshi, Sato Hiroki K, Yotsuhashi Satoshi, Fujii Katsushi, Sugiyama Masakazu, Nakano Yoshiaki

    SUSTAINABLE ENERGY & FUELS   1 ( 8 )   1734 - 1739   2017年10月 (   ISSN:2398-4902 )

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    掲載種別:研究論文(学術雑誌)  

    DOI: 10.1039/c7se00352h

  • Effective mobility for sequential carrier transport in multiple quantum well structures 査読

    Kasidit Toprasertpong, Stephen M. Goodnick, Yoshiaki Nakano, Masakazu Sugiyama

    Physical Review B   96 ( 7 )   2017年8月 (   ISSN:2469-9950   eISSN:2469-9969 )

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    掲載種別:研究論文(学術雑誌)  

    © 2017 American Physical Society. We investigate a theoretical model for effective carrier mobility to comprehensively describe the behavior of the perpendicular carrier transport across multiple quantum well (MQW) structures under applied electric field. The analytical expressions of effective mobilities for thermionic emission, direct tunneling, and thermally assisted tunneling are derived based on the quasithermal equilibrium approximation and the semiclassical approach. Effective electron and hole mobilities in InGaAs/GaAsP MQWs predicted from our model are in good agreement with the experimental results obtained from the carrier time-of-flight measurement near room temperature. With this concept, the complicated carrier dynamics inside MQWs can be simplified to an effective mobility, an equivalent parameter that is more straightforward to handle and can be easily incorporated in the conventional drift-diffusion model.

    DOI: 10.1103/PhysRevB.96.075441

  • Effect of low-V/III-ratio metalorganic vapor-phase epitaxy on GaAs solar cells 査読

    Hao Xu, Kasidit Toprasertpong, Amaury Delamarre, Hassanet Sodabanlu, Kentaroh Watanabe, Yoshiaki Nakano, Masakazu Sugiyama

    Japanese Journal of Applied Physics   56 ( 8 )   2017年8月 (   ISSN:0021-4922   eISSN:1347-4065 )

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    掲載種別:研究論文(学術雑誌)  

    © 2017 The Japan Society of Applied Physics. Single-junction GaAs solar cells were grown by metalorganic vapor-phase epitaxy (MOVPE) at various input V/III ratios. All growth parameters other than V/III ratio were carefully controlled for an accurate comparison. Nearly identical cell performance characteristics including short-circuit current density (J sc) and open-circuit voltage (V oc) indicate that cell performance is independent of V/III ratio. To determine the relationship between the electrically measured V oc and V/III ratio in a more precise manner, photoluminescence (PL) was applied as a potent optical measurement tool, which does not depend on device processing and contacting issues. We also evaluated the projected cell performance under low-concentration sunlight by electroluminescence (EL) analysis. Similarly to electrical measurement, optical measurement showed no obvious degradation owing to a low V/III ratio. This study strongly demonstrates that low-cost high-efficiency GaAs solar cells can be realized by MOVPE using a low V/III ratio.

    DOI: 10.7567/JJAP.56.08MC06

  • Investigation of miniband formation and optical properties of strain-balanced InGaAs/GaAsP superlattice structure embedded in p-i-n GaAs solar cells 査読

    Atsuhiko Fukuyama, Kouki Matsuochi, Tsubasa Nakamura, Hideaki Takeda, Kasidit Toprasertpong, Masakazu Sugiyama, Yoshiaki Nakano, Hidetoshi Suzuki, Tetsuo Ikari

    Japanese Journal of Applied Physics   56 ( 8 )   2017年8月 (   ISSN:0021-4922   eISSN:1347-4065 )

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    掲載種別:研究論文(学術雑誌)  

    © 2017 The Japan Society of Applied Physics. To improve the superlattice (SL) solar cell performance, we carried out an accurate estimation of transition energies and miniband widths and focused on understanding of the optical properties of the SL structure using piezoelectric photothermal (PPT), photoreflectance (PR), and photoluminescence (PL) methods. Solar cell structure samples with different barrier thicknesses from 2.0 to 7.8 nm in quantum wells were prepared. From the PR and theoretical calculation, the formation of a miniband was confirmed. The PL peak showed a redshift and a decrease in signal intensity with decreasing barrier thickness, which were explained by carrier separation as a consequence of electron transportation through the miniband without recombination. The PPT signal intensities of the SL were still large even for the 2.0-nm-barrier-thickness sample. It is conceivable that the multiple-phonon emission during carrier transport through the miniband was detected. The usefulness of multidimensional investigation by using the above three methods is clearly demonstrated.

    DOI: 10.7567/JJAP.56.08MC07

  • Effects of various dopants on properties of GaAs tunneling junctions and p-i-n solar cells 査読

    Hassanet Sodabanlu, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano

    JAPANESE JOURNAL OF APPLIED PHYSICS   56 ( 8 )   2017年8月 (   ISSN:0021-4922   eISSN:1347-4065 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IOP PUBLISHING LTD  

    Several GaAs tunneling junctions (TJs) and p-i-n single junction solar cells grown using a planetary metalorganic vapor phase epitaxy (MOVPE) reactor utilizing various dopant species including Zn, C, S, and Te were investigated. The incorporation of Te atoms into GaAs was approximately two orders larger than that of S atoms. Although only 30% of Te atoms could be electrically activated, a carrier concentration of 10(19)cm(-3) was achieved. Highly C-doped GaAs was successfully obtained by decreasing the growth temperature and increasing the amount of H-2 carrier gas in order to prevent the predecomposition of CBr4 dopant gas. A hole concentration of about 10(20)cm(-3) was realized with a growth temperature of 450 degrees C. The C-Te-doped GaAs TJ exhibited the best ohmic tunneling behavior with a resistivity of 12.5 m Omega center dot cm(2), while the others had diode characteristics. The GaAs solar cell grown with the Zn-S dopant showed the highest conversion efficiency ascribed to a longer minority carrier lifetime. (C) 2017 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.56.08MC11

  • Room-temperature capsule-shaped wavelength-scale metal-clad laser with enhanced side mode suppression 査読

    Yi Xiao, Richard J. E. Taylor, Chuanqing Yu, Kaiyin Feng, Takuo Tanemura, Yoshiaki Nakano

    APPLIED PHYSICS LETTERS   111 ( 8 )   2017年8月 (   ISSN:0003-6951   eISSN:1077-3118 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:AMER INST PHYSICS  

    We fabricate a capsule-shaped metal-clad wavelength-scale InP/InGaAs cavity and demonstrate room-temperature lasing at a wavelength of similar to 1550 nm under pulsed optical pumping. By introducing an optimized curvature to the sidewalls of a conventional rectangular metal-clad laser, we effectively reduce the metallic loss of the transverse-electric mode and experimentally confirm a clear improvement in the side mode suppression ratio and slope efficiency. Published by AIP Publishing.

    DOI: 10.1063/1.5000246

  • Waveguide-coupled metal-clad cavity with integrated feedback stub 査読

    Kaiyin Feng, Masaya Nishimoto, Chuanqing Yu, Sueda Saylan, Richard J. E. Taylor, Takuo Tanemura, Yoshiaki Nakano

    JAPANESE JOURNAL OF APPLIED PHYSICS   56 ( 8 )   2017年8月 (   ISSN:0021-4922   eISSN:1347-4065 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IOP PUBLISHING LTD  

    We propose a wavelength-scale metal-clad III-V semiconductor cavity coupled to silicon-on-insulator (SOI) waveguide with integrated feedback stub for external tuning of the Q factor. We consider a typical wavelength-scale metal-clad InP/InGaAs cavity integrated on a SOI waveguide and demonstrate more than 5-fold Q-factor improvement in agreement with that predicted by the coupled-mode theory. From additional thermal analysis, we prove that improved heat dissipation can be realized by engineering the layer thicknesses without sacrificing much of the optical performance. (C) 2017 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.56.082201

  • Effects of hydrogen etching on stress control in AlN interlayer inserted GaN MOVPE on Si 査読

    Cai Liu, Akihito Kumamoto, Michihiro Suzuki, Hongbo Wang, Hassanet Sodabanlu, Masakazu Sugiyama, Yoshiaki Nakano

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY   32 ( 7 )   2017年7月 (   ISSN:0268-1242   eISSN:1361-6641 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IOP PUBLISHING LTD  

    Clarification and control of the hydrogen etching of GaN is essential to achieving high-quality GaN-on-Si virtual substrates and devices based on it produced by metalorganic vapor phase epitaxy. This phenomenon and its effects on GaN-on-Si stress control were studied in this work. Without deliberate protection, voids with lateral sizes on the micrometre level underneath AlN interlayers emerged in GaN. Such voids made stress balancing in GaN-on-Si systems by inserting AlN interlayers less efficient. By flowing a protective large flow rate of ammonia, voids were eliminated while GaN decomposition still happened, which led to AlGaN alloy in the interlayers. Interfaces of Ga incorporated AlN interlayers grown under large-scale varied conditions were characterised by scanning transmission electron microscopy and energy dispersive spectrometry. Higher growth temperatures caused more Ga in the interlayers and weakened their capacity to induce compressive stress in the overlying GaN.

    DOI: 10.1088/1361-6641/aa6b86

  • Design of free-barrier InGaAs/GaNAs multiple quantum well solar cells with 1.2 eV energy gap 査読

    Yanwachirakul Warakorn, Miyashita Naoya, Sodabanlu Hassanet, Watanabe Kentaroh, Sugiyama Masakazu, Okada Yoshitaka, Nakano Yoshiaki

    Jpn. J. Appl. Phys.   56 ( 8S2 )   08MA04-1 - 08MA04-7   2017年7月 (   ISSN:0021-4922 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Institute of Physics  

    InGaAs and GaNAs were selected as components of a multiple quantum well (MQW) with a free-barrier conduction band (FB-CB) in which the quantum confinement for electrons was eliminated. Since the calculation demonstrated that the energy gap of a strain-balanced FB-CB InGaAs/GaNAs MQW could be decreased to 1.2 eV with lattice matching to Ge, this structure was expected as a potential absorber of the middle cell of a three-junction solar cell based on the Ge bottom cell. Additionally, the InGaAs/GaNAs MQW could mitigate detrimental impacts of the short lifetime of GaNAs because of the preferential existence of holes in InGaAs, and it can realize more efficient carrier transport than bulk GaInNAs. The time-resolved photoluminescence (TRPL) results demonstrated that the InGaAs/GaNAs MQW cell provided a significantly longer lifetime than the GaInNAs thin-film cell. The open-circuit voltage of the InGaAs/GaNAs MQW cell was superior to that of the GaInNAs thin-film cell.

    DOI: 10.7567/JJAP.56.08MA04

  • Development of GaAs//Si current-balanced dual junction solar cell integrated by surface-activated bonding 査読

    Kentaroh Watanabe, Erina Nagaoka, Daiji Yamashita, Kasidit Toprasertpong, Yoshiaki Nakano, Masakazu Sugiyama

    Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017   53   2017年6月

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    掲載種別:研究論文(国際会議プロシーディングス)  

    © 2017 JSPS 191st Committee on Innovative Interface Bonding Technology. A thickness controlled dual junction GaAs//Si solar cell for current matching was fabricated and demonstrated. The optically thin GaAs top cell grown by metal-organic vapor phase epitaxy (MOVPE) was directly integrated on the Si bottom cell by surface-activated bonding (SAB) method. Owing to the optically thin (∼300 nm) GaAs top sub-cell, the operation of current-matched dual junction cell was observed under the standard 1 SUN illumination.

    DOI: 10.23919/LTB-3D.2017.7947449

  • Integrated Reconfigurable Unitary Optical Mode Converter Using MMI Couplers 査読

    Rui Tang, Takuo Tanemura, Yoshiaki Nakano

    IEEE PHOTONICS TECHNOLOGY LETTERS   29 ( 12 )   971 - 974   2017年6月 (   ISSN:1041-1135   eISSN:1941-0174 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC  

    Reconfigurable unitary optical mode converters that can convert multiple orthogonal spatial modes into different orthogonal modes without fundamental optical loss are important for mode-division-multiplexed (MDM) optical communication, imaging, and quantum computation. In this letter, we propose a novel integrated reconfigurable unitary optical mode converter, which consists of cascaded multimode interference couplers and phase shifter arrays. We numerically investigate its ability to realize arbitrary unitary mode conversion and demonstrate its applicability to mode unscrambling as well as mode switching in MDM transmission systems.

    DOI: 10.1109/LPT.2017.2700619

  • Simple direct-detection-based Stokes vector receiver circuit on InP 査読

    Samir Ghosh, Takuo Tanemura, Yuto Kawabata, Kazuhiro Katoh, Kazuro Kikuchi, Yoshiaki Nakano

    2017 Optical Fiber Communications Conference and Exhibition, OFC 2017 - Proceedings   2017年5月

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    掲載種別:研究論文(国際会議プロシーディングス)  

    © 2017 Optical Society of America. Compact and robust photonic-integrated circuit for low-cost direct-detection-based Stokes vector (SV) receiver is presented. A proof-of-concept device is fabricated on InP to demonstrate successful decoding of multilevel SV-modulated signal at 1 Gbaud.

  • Polarization-analyzing circuit on InP for integrated Stokes vector receiver 査読

    Samir Ghosh, Yuto Kawabata, Takuo Tanemura, Yoshiaki Nakano

    OPTICS EXPRESS   25 ( 11 )   12303 - 12310   2017年5月 (   ISSN:1094-4087 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:OPTICAL SOC AMER  

    Stokes vector modulation and direct detection (SVM/DD) has immense potentiality to reduce the cost burden for the next-generation short-reach optical communication networks. In this paper, we propose and demonstrate an InGaAsP/InP waveguide-based polarization-analyzing circuit for an integrated Stokes vector (SV) receiver. By transforming the input state-of-polarization (SOP) and projecting its SV onto three different vectors on the Poincare sphere, we show that the actual SOP can be retrieved by simple calculation. We also reveal that this projection matrix has a flexibility and its deviation due to device imperfectness can be calibrated to a certain degree, so that the proposed device would be fundamentally robust against fabrication errors. A proof-of-concept photonic integrated circuit (PIC) is fabricated on InP by using half-ridge waveguides to successfully demonstrate detection of different SOPs scattered on the Poincare sphere. (C) 2017 Optical Society of America

  • Electroluminescence-based quality characterization of quantum wells for solar cell applications 査読

    Kasidit Toprasertpong, Tomoyuki Inoue, Amaury Delamarre, Kentaroh Watanabe, Jean François Guillemoles, Masakazu Sugiyama, Yoshiaki Nakano

    Journal of Crystal Growth   464   94 - 99   2017年4月 (   ISSN:0022-0248 )

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    掲載種別:研究論文(学術雑誌)  

    © 2016 Elsevier B.V. Material quality is a critical factor which determines the performance, particularly the open-circuit voltage, of multiple quantum well (MQW) solar cells. In this study, we report an electroluminescence-based characterization technique for evaluating luminescence efficiency and Shockley-Read-Hall recombination lifetime in MQW structures as a measure of the material quality. As a demonstration, various structures of InGaAs/GaAsP MQWs inserted in GaAs solar cells are investigated. The complete compensation of strain and the insertion of GaAs interlayers between heterointerfaces result in significant improvement of electroluminescence homogeneity, external luminescence efficiency, and lifetime, agreeing well with the tendency of the open-circuit voltage. We show that this characterization technique can detect even subtle degradations, which are not easily detectable by other typical techniques, such as in-situ reflection, X-ray diffraction, and spectral and transient photoluminescence, but still have a significant impact on the performance of solar cells.

    DOI: 10.1016/j.jcrysgro.2016.10.056

  • Effects of NiO-loading on n-type GaN photoanode for photoelectrochemical water splitting using different aqueous electrolytes 査読

    Kayo Koike, Kazuhiro Yamamoto, Satoshi Ohara, Tomoka Kikitsu, Kazunari Ozasa, Shinichiro Nakamura, Masakazu Sugiyama, Yoshiaki Nakano, Katsushi Fujii

    INTERNATIONAL JOURNAL OF HYDROGEN ENERGY   42 ( 15 )   9493 - 9499   2017年4月 (   ISSN:0360-3199   eISSN:1879-3487 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:PERGAMON-ELSEVIER SCIENCE LTD  

    n-type GaN photoanodes used for water splitting have stability problems. One means of resolving this is loading NiO catalyst on the n-type GaN surface. Aqueous electrolytes H2SO4, HCl, KOH, and NaOH are usually used for photoelectrochemical water splitting. However, suitable electrolytes for the NiO-loading on n-type GaN photoelectrode have not yet been evaluated. Therefore, we investigated the effects of changing electrolytes used for NiO-loading in this study. The photocurrent of NiO-loading on n-type GaN increased when KOH and NaOH electrolytes were used. In addition, the surfaces showed no corrosion after reaction when these electrolytes were used. However, the photocurrent was not stable using KOH electrolyte. Interestingly, stable photocurrent was observed with when the NaOH electrolyte was used. In the case of H2SO4, the photocurrent of GaN did not change with and without NiO. The surface morphologies became rough because of GaN corrosion, and NiO dissolved in the H2SO4 electrolyte. (C) 2017 Hydrogen Energy Publications LLC. Published by Elsevier Ltd. All rights reserved.

    DOI: 10.1016/j.ijhydene.2016.12.141

  • Measurement of 3-dimensional dopant distribution in InGaAs microdiscs grown selectively on Si (111) 査読

    Tohma Watanabe, Miyuki Takeuchi, Yoshiaki Nakano, Masakazu Sugiyama

    JOURNAL OF CRYSTAL GROWTH   464   33 - 38   2017年4月 (   ISSN:0022-0248   eISSN:1873-5002 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:ELSEVIER SCIENCE BV  

    The control of the dopant profile in 3-dimentional InGaAs microdiscs on Si (111) is essential for their device applications. However, such profiles can never be controlled by simply changing the supply of dopant precursors during the growth of microdiscs. This is because a variety of crystal planes, such as (111), {-110}, and irregular planes near the corners, surround a hexagonal pillar of InGaAs and the incorporation efficiency of dopant elements depends significantly on the kind of planes involved. We here observed the distributions of sulfur and zinc in p-i-n InGaAs microdiscs by both cross-sectional scanning capacitance microscopy (SCM) and secondary ion mass spectrometry using focused ion beam (NanoSIMS). Even though the InGaAs shell was grown on the microdiscs using dimethylzinc (DMZn), no p-type region was found on the top of the microdiscs and the p-type region existed on the sidewall of the discs alone. This result suggested that the zinc incorporation efficiency on InGaAs (111) plane is much lower than that on {-110} planes. Complete encapsulation of the microdiscs with p type region was possible by the post-diffusion of zinc during exposure to a mixture of tertiarybutylarsine (TBAs) and DMZn after the growth of InGaAs microdiscs.

    DOI: 10.1016/j.jcrysgro.2016.12.003

  • Low-temperature growth of AIN and GaN by metal organic vapor phase epitaxy for polarization engineered water splitting photocathode 査読

    Akihiro Nakamura, Michihiro Suzuki, Katsushi Fujii, Yoshiaki Nakano, Masakazu Sugiyama

    JOURNAL OF CRYSTAL GROWTH   464   180 - 184   2017年4月 (   ISSN:0022-0248   eISSN:1873-5002 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:ELSEVIER SCIENCE BV  

    Crystal properties of low-temperature grown AIN (LT-AlN) combined with low temperature GaN (LT-GaN) grown by metal organic vapor phase epitaxy (MOVPE) were investigated to obtain a high quality GaN/AlN/GaN structure with a few-nm-thick AIN layer. LT-AIN suppresses unintentional Ga incorporation and can be pseudomorphically grown on GaN with a relatively smooth surface morphology. The lattice of LT-AlN coherent to GaN, however, was found to relax after reactor conditions were changed to grow the subsequent GaN layer at higher temperature. The top GaN layer grown on the relaxed LT-AIN, thus, exhibited a rough surface morphology and a threading dislocation density (TDD) higher than 109 cm(-2) estimated from an X-ray diffraction measurement. An LT-GaN capping layer was found to be highly effective for avoiding such lattice relaxation of LT-AlN. The combination of LT-AIN and LT-GaN enables us to obtain a GaN/AIN/GaN junction with high Al content, a low TDD, and abrupt interfaces. As a result, introducing an LT-GaN layer improved the photoelectrochemical (PEC) property of a polarization engineered un-doped GaN/A1N/n-type GaN (u-GaN/ AIN/n-GaN) photocathode for water splitting.

    DOI: 10.1016/j.jcrysgro.2016.12.005

  • Mechanism of stress control for GaN growth on Si using AlN interlayers 査読

    Michihiro Suzuki, Akihiro Nakamura, Yoshiaki Nakano, Masakazu Sugiyama

    JOURNAL OF CRYSTAL GROWTH   464   148 - 152   2017年4月 (   ISSN:0022-0248   eISSN:1873-5002 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:ELSEVIER SCIENCE BV  

    For the purpose of controlling the wafer bow of GaN-on-Si structure, in situ curvature transient during the growth of a GaN layer on an AlN interlayer was investigated systematically by estimating the compressive strain applied to the GaN layer with the progress of the layer growth. The compressive strain was dependent on the morphology of the GaN surface prior to the growth of the AIN interlayer. It was found that the transition sequence from GaN growth to AIN growth induces roughening of the GaN surface and both high NH3 partial pressure and the short transition time were effective for reducing the roughness of the GaN surface beneath the interlayer. The improved transition sequence increased the compressive strain in GaN by a factor of 2.5. The AlN grown at the same temperature as that of GaN was beneficial in both better surface morphology and the reduction of the transition time between GaN growth and AN growth. With this high-temperature AN interlayer, its thickness is another important factor governing the compressive strain in GaN. To get AIN relaxed for applying the compressive strain to GaN, the AIN layer should be thicker but too thick layer after relaxation results in surface roughening, which in turn introduces defects to the overlying GaN layer and reduces the compressive strain by partial lattice relaxation of GaN.

    DOI: 10.1016/j.jcrysgro.2016.12.090

  • Stability and controllability of InGaAs/GaAsP wire-on-well (WoW) structure for multi-junction solar cells 査読

    Hirofumi Cho, Kasidit Toprasertpong, Hassanet Sodabanlu, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano

    Journal of Crystal Growth   464   86 - 93   2017年4月 (   ISSN:0022-0248 )

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    掲載種別:研究論文(学術雑誌)  

    © 2017 Elsevier B.V. Wire on Well (WoW) structure embedded in a matrix is naturally formed by growing InxGa1−xAs/GaAs1−yPy strained multiple quantum wells (MQW) on vicinal substrates and employing triethylgallium (TEGa) as a precursor in low-temperature MOVPE. The structure is useful for the subcell in current-matched mult-junction solar cells with lattice-matched materials because of its ability of band-gap tuning. In this research, high density and uniform In0.30Ga0.70As/GaAs0.6P0.4 WoW was obtained up to 200 stacks and its structure was analyzed by X-ray diffraction reciprocal space mapping, atomic force microscopy and scanning transmission electron microscopy. The structure of the wire can be controlled by changing the equivalent layer thicknesses of In0.30Ga0.70As and GaAs0.6P0.4. The photoluminescence peak from the WoW shifted according to the size of InGaAs wires and the intensity was dependent on the accumulation of lattice-mismatch stress.

    DOI: 10.1016/j.jcrysgro.2016.11.087

  • From sewing thread to sensor: Nylon® fiber strain and pressure sensors 査読

    Yarjan Abdul Samad, Kento Komatsu, Daiji Yamashita, Yuanqing Li, Lianxi Zheng, Saeed M. Alhassan, Yoshiaki Nakano, Kin Liao

    Sensors and Actuators, B: Chemical   240   1083 - 1090   2017年3月 (   ISSN:0925-4005 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Elsevier B.V.  

    Some of the most advanced laptop computers have their trackpads made to detect both force and position precisely. These trackpads are made of intricately designed force sensors, taptic engines and capacitive glass surfaces. In this study, we have modified simple Nylon® fabric which senses both force and position. A commercially available Nylon® fabric was coated with reduced graphene (rGO) in a layer by layer fashion such that the individual fibers of the fabric get wrapped by rGO and the fabric looks like dyed with grey color. The SEM images of the twisted individual rGO coated fibers show that the coating remains undamaged until a twist angle of about 1800°. An in situ applied pressure in compression, on the fabric, of about 2500 kPa changes its resistance 8 kΩ relative to its original resistance with a durability of up to 6000 cycles. Single rGO coated fibers quarantined and tested for their strain sensitivity show that an in situ bending radius of 1 mm changes its resistance to 326 ± 21 kΩ relative to its original resistance. With the help of a read-out circuit it was also showed that quarantined rGO coated fibers arranged in a 2 × 2 grid format sense the position of the applied force.

    DOI: 10.1016/j.snb.2016.09.088

  • Optimization of Modulation-Canceling Reflective Semiconductor Optical Amplifier for Colorless WDM Transmitter Applications 査読

    Wenhui Zhan, Peng Zhou, Yuxiao Zeng, Masaru Mukaikubo, Takuo Tanemura, Yoshiaki Nakano

    JOURNAL OF LIGHTWAVE TECHNOLOGY   35 ( 2 )   274 - 279   2017年1月 (   ISSN:0733-8724   eISSN:1558-2213 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC  

    Self-seeded reflective semiconductor optical amplifier (RSOA) has been drawing special attention as potentially low-cost colorless wavelength-division-multiplexed transmitter. In this paper, we present numerical and experimental analyses of RSOA to find the optimal condition to induce strong modulation canceling effect overwide temperature range. Three InGaAlAs/InP multiple-quantum-well RSOAs with different length are compared numerically and experimentally to reveal the existence of critical RSOA length to induce efficient modulation-cancelling effect. By using the optimal RSOA length of 1 mm, we experimentally demonstrate 2.5-Gb/s self-seeded transmission at 1550-nm wavelength over a 25-km standard single-mode fiber at both 25 and 50 degrees C. In addition, we demonstrate feasibility of higher-temperature (70 degrees C) as well as higher-bitrate (10 Gb/s) operation by employing the amplified self-seeded configuration with appropriately selected RSOAs.

    DOI: 10.1109/JLT.2016.2633719

  • Characterization of multi-junction solar cells by mapping of the carrier transport efficiency using luminescence emission 査読

    Amaury Delamarre, Jieyang Jia, Paul Verdier, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano, Jean-Francois Guillemoles

    PHYSICS, SIMULATION, AND PHOTONIC ENGINEERING OF PHOTOVOLTAIC DEVICES VI   10099   2017年 (   ISSN:0277-786X )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:SPIE-INT SOC OPTICAL ENGINEERING  

    Multijunction solar cells are currently the devices offering the largest conversion efficiencies of the solar radiation, which could be further increased by limiting their series resistances. A clear evaluation of the impact of those resistances is therefore required, and provided in this paper by introducing a mapping method of the current transport efficiency from luminescence images. This method brings finer information on the cell than electroluminescence methods, widely used so far for multi-junction cells, and offers much faster acquisition time than what could be obtained with a light beam induced current setup. While it has been theoretically and experimentally developed for single junction solar cells, its application to multijunction cells remains to be demonstrated. The purpose of this communication is to assess its validity and to explain some results that can be counterintuitive at a first sight. Two different triple-junction architectures are investigated and successfully compared with electrical measurements and calculations.

    DOI: 10.1117/12.2250866

  • Carrier Collection Model and Design Rule for Quantum Well Solar Cells 査読

    Kasidit Toprasertpong, Boram Kim, Yoshiaki Nakano, Masakazu Sugiyama

    2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)   2201 - 2204   2017年 (   ISSN:0160-8371 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    Multiple quantum wells (MQWs) help enhance the light absorption but suffer from their poor carrier transport. Here, we propose a design rule for the cell optimization, particularly focusing on the optimal position and stack number for a given MQW structure. According to the effective-mobility model, the carrier collection from MQW is efficient when the carrier density profile is balanced and the total thickness is kept below the drift length. Based on this finding, we propose the modified detailed-balance calculation which includes the carrier collection behavior in MQW solar cells.

  • Efficiency of GaAs P/Si Two-junction Solar Cells with Multi-Quantum Wells: a Realistic Modeling with Carrier Collection Efficiency 査読

    Boram Kim, Kasidit Toprasertpong, Oliver Supplie, Agnieszka Paszuk, Thomas Hannappel, Yoshiaki Nakano, Masakazu Sugiyama

    2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)   2524 - 2527   2017年 (   ISSN:0160-8371 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    A new structure for III-V on Si two-junction solar cells is proposed with the use of multi-quantum wells (MQWs), reducing the lattice constant of the GaAsP-based top cell and minimizing the thickness of a metamorphic buffer layer between the top cell and the GaP seed layer on Si. The strain-balanced MQWs helps the reduction of As content in the top-cell matrix while extending the absorption edge to a longer wavelength by narrow-gap quantum wells. The efficiency is predicted to be as large as 40% with an entire MQW thinner than 800 nm. The model takes into account the drawbacks of MQWs such as limited light absorption and the bottleneck of carrier collection from the confinement states. This work addresses a new direction toward high-efficiency III-V on Si cells.

  • Fabrication of monolithic InGaAlAs/InAlAs MQW-based polarization controller InGaAlAs/InAlAs 査読

    M. Kazi, S. Ghosh, H. Sodabanlu, M. Sugiyama, T. Tanemura, Y. Nakano

    Optics InfoBase Conference Papers   Part F78-JSAP 2017   2017年

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    掲載種別:研究論文(国際会議プロシーディングス)  

  • Design of InGaP/GaAs/InGaAs multi-junction cells with reduced layer thicknesses using light-trapping rear texture 査読

    Lin Zhu, Anurag Reddy, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano, Hidefumi Akiyama

    2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)   3528 - 3533   2017年 (   ISSN:0160-8371 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    Aiming at the realization of high efficiency and low cost simultaneously, we modeled light absorption by subcells for a substrate-free thin-film multi-junction cell with a rear texture. The model evaluated subcell photocurrents and the requisite thicknesses at current matching. For InGaP/GaAs/InGaAs metamorphic 3-junction solar cells, the rear texture significantly enhanced light absorption in the InGaAs bottom cell and GaAs middle subcells, and the requisite thickness of InGaAs is almost less than 10% of that with flat rear reflector, even GaAs is also less than half of that without rear texture, if InGaP-subcell is not greater than 600 nm. The reduced lower subcell thickness by the texture rear surface will mitigate the difficulty of metamorphic growth and contribute to the cost reduction of multi-junction solar cells.

  • Effect of KHCO3 Concentration on Electrochemical Reduction of CO2 on Copper Electrode 査読

    Heng Zhong, Katsushi Fujii, Yoshiaki Nakano

    JOURNAL OF THE ELECTROCHEMICAL SOCIETY   164 ( 9 )   F923 - F927   2017年 (   ISSN:0013-4651   eISSN:1945-7111 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:ELECTROCHEMICAL SOC INC  

    Recently, extensive investigations have been carried out on the electrochemical and photoelectrochemical reductions of CO2 into hydrocarbons to convert renewable energies into chemical fuels. In these researches, aqueous solutions of bicarbonate salts, such as NaHCO3 and KHCO3, are widely used as the supporting electrolyte. However, the effects of HCO3- on the CO2 reduction have not been studied in detail. In this research, the effects of KHCO3 concentration on CO2 reduction were studied at different applied potentials on a Cu working electrode using a potentiostatic method. The concentration of dissolved CO2 ([CO2]) and ratio of [CO2]/[K+] in the KHCO3 solution after bubbling with CO2 were studied to determine the relationship between KHCO3 concentration and CO2 reduction faradaic efficiency. The results suggest that high [CO2]/[K+] ratio in solutions with low KHCO3 concentration is probably a key factor to promote CO2 reduction faradaic efficiency. A model for the effect of [CO2]/[K+] ratio on CO2 reduction efficiency was also proposed. (C) 2017 The Electrochemical Society. All rights reserved.

    DOI: 10.1149/2.0601709jes

  • In situ control over the sublattice orientation of GaP/Si(100): As virtual substrates for tandem absorbers 査読

    Agnieszka Paszuk, Oliver Supplie, Sebastian Brueckner, Matthias M. May, Anja Dobrich, Andreas Naegelein, Boram Kim, Yoshiaki Nakano, Masakazu Sugiyama, Peter Kleinschmidt, Thomas Hannappel

    2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)   2538 - 2542   2017年 (   ISSN:0160-8371 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    III-V integration on Si processed in MOCVD ambient which contains As opens up new opportunities for high-efficiency multi-junction solar cells. Here, we study the interaction of As with vicinal Si(100) surfaces, the formation of atomically well-ordered, As-modified Si(100) surfaces and its impact on subsequently grown GaP epilayers. We combine optical in situ spectroscopy with surface science techniques in ultra-high vacuum to understand the As-modified Si(100) surface and the III-V/Si interface at atomic scale. We demonstrate that depending on dimer orientation on the Si(100) surface, we are able to control the sublattice orientation of subsequently grown GaP.

  • Ghost imaging using integrated optical phased array 査読

    Kento Komatsu, Yasuyuki Ozeki, Yoshiaki Nakano, Takuo Tanemura

    2017 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC)   2017年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    We propose inherently robust and low-cost imaging scheme based on integrated optical phased array (OPA) driven by random control patterns. A proof-of-concept inonolithic 1nP-based OPA is fabricated to demonstrate high-speed one-dimensional scanning without need for timeconsuming calibration.

  • Photocurrent collection mechanism and role of carrier distribution in p-i-n quantum well solar cells 査読

    Kasidit Toprasertpong, Tomoyuki Inoue, Amaury Delamarre, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano

    2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017   1 - 6   2017年

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    掲載種別:研究論文(国際会議プロシーディングス)  

    © 2017 IEEE. We investigate the role of carrier distribution inside the i-region in the photocurrent collection mechanism of pi-n quantum well solar cells. The device simulation indicates that the increment of Shockley-Read-Hall recombination after illumination strongly depends on the type of photocarriers and i- region majority carriers. As a result, a solar cell with n-type background doping results in efficient collection of photogenerated electrons from quantum wells even at low field, and this has been confirmed with the results of time-of-flight measurement. Based on this finding, we demonstrate a model for estimating carrier collection efficiency which includes the effect of carrier distribution.

    DOI: 10.1109/PVSC.2017.8366378

  • Optical analysis of the photon recycling effect in InGaAs/GaAsP multiple quantum well solar cell with light trapping structure 査読

    Kentaroh Watanabe, Tomoyuki Inoue, Kasidit Toprasertpong, Amaury Delamarre, Hassanet Sodabanlu, Jean Francois Guillemoles, Masakazu Sugiyama, Yoshiaki Nakano

    2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017   1 - 5   2017年

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    掲載種別:研究論文(国際会議プロシーディングス)  

    © 2017 IEEE. Optical evaluation of the GaAs single junction solar cell with InGaAs/GaAsP strain balanced multiple quantum wells (SB-MQWs) was attempted. In order to estimate the photon recycling (PR) effect for different effective optical path lengths in optically-thin MQWs, a quantitative analysis of electroluminescence (EL) was applied for the MQWs solar cells with and without light trapping texture on the rear surface. By external quantum efficiency measurement, a clear improvement in MQWs absorption was obtained by rear surface texturing of the semi-insulating GaAs substrate with epitaxially grown PV active layer. Upon EL measurement under carrier injection, the cell with light trapping texture showed increased EL photon emission, indicating the enhancement of V OC . This is because the enhanced optical absorption by light trapping effect facilitated more vigorous photon recycling in the active region of the cell.

    DOI: 10.1109/PVSC.2017.8366256

  • Room-Temperature Capsule-Shaped Wavelength-Scale Metal-Clad Laser Operating at 1550 nm 査読

    Yi Xiao, Richard J. E. Taylor, Chuanqing Yu, Takuo Tanemura, Yoshiaki Nakano

    2017 CONFERENCE ON LASERS AND ELECTRO-OPTICS PACIFIC RIM (CLEO-PR)   2017年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    We fabricate a capsule-shaped metal-clad wavelength-scale cavities on InP and demonstrate room-temperature lasing at 1550-nm wavelength. By introducing an optimized curvature to the sidewalls of a conventional rectangular metal-clad laser, we effectively reduce the optical loss of transverse-electric (TE) mode and experimentally confirm, for the first time, clear improvement in side mode suppression ratio and slope efficiency of the laser under pulsed optical pumping.

  • Reconfigurable integrated MIMO optical mode demultiplexer using MMI couplers 査読

    Rui Tang, Takuo Tanemura, Yoshiaki Nakano

    Optics InfoBase Conference Papers   2017   2017年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:OSA - The Optical Society  

    We propose a novel reconfigurable integrated MIMO optical mode demultiplexer consisting of cascaded MMI couplers. By configuring phase shifters adaptively, large-scale (&gt
    10 modes), low-crosstalk (&lt
    -20 dB) demultiplexing can be realized on chip.

    DOI: 10.1364/CLEO_AT.2017.JTh2A.116

  • Optical properties of miniband formed in the InGaAs/GaAs quantum well solar cells by means of photoreflectance, photoluminescence, and photothermal spectroscopies 査読

    A. Fukuyama, K. Matsuochi, T. Nakamura, H. Takeda, H. Suzuki, K. Toprasertpong, M. Sugiyama, Y. Nakano, T. Ikari

    Nanotechnology Materials and Devices Conference, NMDC 2016 - Conference Proceedings   2016年12月

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    掲載種別:研究論文(国際会議プロシーディングス)  

    © 2016 IEEE. To investigate the miniband and carrier transport properties in the superlattice structure embedded in the p-i-n GaAs solar cells, photoreflectance, photoluminescence, and photothermal spectroscopies were adopted. Two critical energies corresponding to the energy differences between mini-Brillouin zone edges were estimated for thinnest quantum barrier thickness sample by PR. From the PPT and PL, only broad peaks corresponding to the quantum levels were observed and we concluded that a built-in electric field inhibited the formation of miniband.

    DOI: 10.1109/NMDC.2016.7777105

  • Sub-wavelength metallic laser coupled to silicon-on-insulator waveguide with integrated optical feedback stub for Q factor enhancement 査読

    Kaiyin Feng, Chuanqing Yu, Masaya Nishimoto, Richard J.E. Taylor, Takuo Tanemura, Yoshiaki Nakano

    Conference Digest - IEEE International Semiconductor Laser Conference   2016年12月 (   ISSN:0899-9406 )

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    掲載種別:研究論文(国際会議プロシーディングス)  

    © 2016 IEICE-ES. We propose a novel design of sub-wavelength metallic-cavity InP/InGaAs laser with unidirectional output on a silicon-on-insulator waveguide. By engineering the length and shape of the integrated optical feedback stub, formed on the non-output end of the waveguide, we improve the overall Q factor while maintaining confinement factor.

  • Quantum wire-on-well (WoW) cell with long carrier lifetime for efficient carrier transport 査読

    Masakazu Sugiyama, Hiromasa Fujii, Takumi Katoh, Kasidit Toprasertpong, Hassanet Sodabanlu, Kentaroh Watanabe, Diego Alonso-Álvarez, Nicholas J. Ekins-Daukes, Yoshiaki Nakano

    Progress in Photovoltaics: Research and Applications   24 ( 12 )   1606 - 1614   2016年12月 (   ISSN:1062-7995   eISSN:1099-159X )

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    掲載種別:研究論文(国際会議プロシーディングス)  

    Copyright © 2016 John Wiley & Sons, Ltd. A quantum wire-on-well (WoW) structure, taking advantage of the layer undulation of an InGaAs/GaAs/GaAsP superlattice grown on a vicinal substrate, was demonstrated to enhance the carrier collection from the confinement levels and extend the carrier lifetime (220 ns) by approximately four times more than a planar reference superlattice. Strained InGaAs/GaAs/GaAsP superlattices were grown on GaAs substrates under exactly the same conditions except for the substrate misorientation (0 and 6 ° off). The growth on a 6 ° off substrate induced significant layer undulation as a result of step bunching and non-uniform precursor incorporation between steps and terraces, whereas the growth on a substrate without miscut resulted in planar layers. The undulation was the most significant for InGaAs layers, forming periodically aligned InGaAs nanowires on planar wells, a WoW structure. As for the photocurrent corresponding to the sub-bandgap range of GaAs, the light absorption by the WoW was extended to longer wavelengths and weakened as compared with the planar superlattice. Almost the same photocurrent was obtained for both the WoW and the planar superlattice. Open-circuit voltage for the WoW was not affected by the longer-wavelength absorption edge, and the same value was obtained for the two structures. Furthermore, the superior carrier collection in the WoW, especially under forward biases, improved fill factor compared with the planer superlattice. Copyright © 2016 John Wiley & Sons, Ltd.

    DOI: 10.1002/pip.2769

  • InGaAs/GaAsP quantum wells and wires for high-efficiency photovoltaic applications 査読

    Masakazu Sugiyama, Hirofumi Cho, Toprasertpong Kasidit, Hassanet Sodabanlu, Kentaroh Watanabe, Yoshiaki Nakano

    16th International Conference on Nanotechnology - IEEE NANO 2016   519 - 520   2016年11月

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    掲載種別:研究論文(国際会議プロシーディングス)  

    © 2016 IEEE. Layer undulation of InGaAs/GaAs/GaAsP strainbalanced quantum well superlattice forms InGaAs nanowires along the bunching steps on a vicinal substrate embedded in the GaAs/GaAsP matrix. When it is used as an absorber in a GaAs single-junction cell, it assists carrier escape from narrow-gap InGaAs and extends photoluminescence lifetime as compared with a planar superlattice. Such a wire structure can be superior to existing quantum wells as a band-gap adjuster of a middle cell for improved current matching and efficiency.

    DOI: 10.1109/NANO.2016.7751576

  • Surface-normal electro-optic-polymer modulator with silicon subwavelength grating 査読

    Yuji Kosugi, Toshiki Yamada, Akira Otomo, Yoshiaki Nakano, Takuo Tanemura

    IEICE ELECTRONICS EXPRESS   13 ( 17 )   2016年9月 (   ISSN:1349-2543 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG  

    We propose novel silicon-based surface-normal optical modulator using electro-optic (EO) polymer. The EO polymer is embedded inside a thin silicon subwavelength grating layer, which is used as both the interdigitated electrodes for effective poling of the EO polymer, and as high-Q resonant structure for the incident light to enable efficient modulation. We numerically demonstrate 10-dB intensity modulation at 1550-nm wavelength under a refractive index change of only 3.8 x 10(-4), corresponding to the driving voltage below 1 V. Total-reflectance phase modulator is also demonstrated by adding a backside reflector. With inherently high-speed response over several tens of GHz, scalability to dense 2-D array integrated with CMOS driver circuitry, and relatively easy and low-cost fabrication without epitaxial process, the proposed device may find versatile applications in optical interconnects, free-space optical communications, imaging and sensing.

    DOI: 10.1587/elex.13.20160595

  • GaAs Quantum Nanodisks Light Emitting Diode Fabricated by Nanoscale Dry Process and MOVPE Regrowth 招待 査読

    A. Higo, T. Kiba, C. Thomas, J. Takayama, M. Sugiyama, Y. Nakano, A. Murayama, S. Samukawa

    JSPS workshop on Japan-Sweden frontiers in spin and photon functionalities of semiconductor nanostructures   2016年8月

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

  • Electroactive species study in the electrochemical reduction of CO2 in KHCO3 solution at elevated temperature 査読

    Zhong Heng, Fujii Katsushi, Nakano Yoshiaki

    JOURNAL OF ENERGY CHEMISTRY   25 ( 3 )   517 - 522   2016年5月 (   ISSN:2095-4956 )

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    掲載種別:研究論文(学術雑誌)  

    DOI: 10.1016/j.jechem.2016.01.019

  • Q factor improvement by capsule-shaped metallic cavity structure for subwavelength lasers 査読

    Baifu Zhang, Koh Chieda, Takuya Okimoto, Takuo Tanemura, Yoshiaki Nakano

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   213 ( 4 )   965 - 969   2016年4月 (   ISSN:1862-6300   eISSN:1862-6319 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:WILEY-V C H VERLAG GMBH  

    A series of wavelength-scale capsule-shaped metallic cavity structures with InGaAs/InGaAsP multiple quantum wells are fabricated and characterized by photoluminescence measurement for the first time. By introducing cylindrical facets with optimal curvature to a conventional rectangular cavity, the electric field of the resonant mode is pushed effectively into the center of the mesa. As a result, the mode distribution at the metallic sidewalls and the plasmonic losses are reduced dramatically. We experimentally confirm up to fourfold enhancement in the Q factor of the fabricated capsule-shaped cavity compared with that of a rectangular structure with same dimension. The measured results are consistent with the 3D finite-difference time-domain simulation, and validate the effectiveness of the scheme.

    DOI: 10.1002/pssa.201532561

  • Silicon rib waveguide electro-absorption optical modulator using transparent conductive oxide bilayer 査読

    Masafumi Ayata, Yoshiaki Nakano, Takuo Tanemura

    JAPANESE JOURNAL OF APPLIED PHYSICS   55 ( 4 )   2016年4月 (   ISSN:0021-4922   eISSN:1347-4065 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IOP PUBLISHING LTD  

    We propose a novel ultra compact electro-absorption optical modulator based on a silicon rib waveguide and numerically demonstrate its performance. The proposed design employs two types of transparent conductive oxide (TCO) layers with different carrier densities to achieve both high modulation efficiency and low optical insertion loss. The thin TCO layer with high carrier density enables efficient modulation through the metal-oxide-semiconductor structure. On the other hand, the upper TCO layer with low carrier density allows low-resistance electrical contact for the top electrode without large optical loss. Using an indium tin oxide bilayer with optimized carrier densities, we numerically demonstrate a 4.3 dB extinction ratio and a 2.6 dB optical insertion loss with 1 mu m device length. We estimate that the modulator operates under a low driving voltage of 1.3V, exhibiting an ultra low energy consumption of 22.5 fJ/bit and a broad RC modulation bandwidth of over 40 GHz. (C) 2016 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.55.042201

  • Effective Drift Mobility Approximation in Multiple Quantum-Well Solar Cell 査読

    K. Toprasertpong, T. Inoue, K. Watanabe, T. Kita, M. Sugiyama, Y. Nakano

    Proc. SPIE 9743, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices V   ( 974315 )   2016年3月

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1117/12.2209611

  • Experimental Demonstration of Optically Determined Solar Cell Current Transport Efficiency Map 査読

    Amaury Delamarre, Laurent Lombez, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano, Jean-Francois Guillemoles

    IEEE JOURNAL OF PHOTOVOLTAICS   6 ( 2 )   528 - 531   2016年3月 (   ISSN:2156-3381 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC  

    A recently suggested reciprocity relation states that the current transport efficiency from the junction to the cell terminal can be determined by differentiating luminescence images with respect to the terminal voltage. The validity of this relation is shown experimentally in this paper, by comparison with simultaneously measured electrical currents and simulations. Moreover, we verify that the method is applicable under various light concentrations and applied voltages, which allows us to investigate the cell in relevant conditions. Results evidence several kinds of series resistances affecting the current transport efficiencies. We show that the relative contribution of those different resistances to the loss in current collection is a function of the illumination intensity.

    DOI: 10.1109/JPHOTOV.2016.2516249

  • Analysis of defect levels at GaAs/GaAs Surface-activated bonding interface for multi-junction solar cells 査読

    M. Sugiyama, D. Yamashita, K. Watanabe, M. Fujino, T. Suga, Y. Nakano

    ECS Transactions   75 ( 9 )   33 - 38   2016年 (   ISSN:1938-5862   eISSN:1938-6737 )

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    掲載種別:研究論文(国際会議プロシーディングス)  

    © 2016 The Electrochemical Society. Quantitative evaluation of crystal defects introduced by fast atom beam (FAB) treatment was developed for surface-activated wafer bonding. The surface of n-GaAs was treated with the FAB using Ne, Ar and Kr, and Au Schottky electrodes were formed on the surfaces. Capacitance of a Schottky diode as a function of both probe frequency and DC bias allowed us to characterize both energy depth of the defects and their density profile along the physical depth from the GaAs surface. The results indicated that atoms with the smaller diameter generate high-density defects to the deeper region from the surface. When the defect density exceeding the doping level of GaAs spreads to wider than 5 nm, significant Schottky characteristics appeared in the interfacial current-voltage characteristics, as suggested by simulations. Such a tendency was semi-quantitatively in good agreement with the measured current-voltage characteristics.

    DOI: 10.1149/07509.0033ecst

  • Admittance Spectroscopy Analysis on the Interfacial Defect Levels in the Surface-Activated Bonding of GaAs 査読

    Daiji Yamashita, Kentaroh Watanabe, Masahisa Fujino, Takuya Hoshii, Yoshitaka Okada, Yoshiaki Nakano, Tadatomo Suga, Masakazu Sugiyama

    2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)   2317 - 2319   2016年 (   ISSN:0160-8371 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1109/PVSC.2016.7750051

  • Capsule-shaped metallic-cavity semiconductor lasers for low-energy on-chip light sources 査読

    Takuo Tanemura, Baifu Zhang, Yoshiaki Nakano

    SEMICONDUCTOR LASERS AND LASER DYNAMICS VII   9892   2016年 (   ISSN:0277-786X )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:SPIE-INT SOC OPTICAL ENGINEERING  

    We review our recent studies on capsule-shaped InP/InGaAs metallic-cavity lasers. By introducing an optimal curvature at the metallic sidewalls of conventional rectangular metallic lasers, the electric fields of the resonant mode are pushed effectively into the center of the mesa, which allows dramatic reduction of the plasmonic loss. The validity of the scheme is verified both numerically and experimentally. From three-dimensional finite-difference time-domain simulation and rate-equation analysis, we estimate that the threshold current can be reduced to as low as 60 mu A with the effective modal volume of 0.45 mu m(3). Up to 4-fold increase in Q value is confirmed experimentally for the cavity structure with an optimal curvature.

    DOI: 10.1117/12.2230652

  • Comprehensive Analysis on Electrically Pumped Metallic Cavity Lasers 査読

    Chuanqing Yu, Baifu Zhang, Yi Xiao, Takuo Tanemura, Yoshiaki Nakano

    2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS)   2016年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    We present the design of an electrically pumped metallic cavity laser based on optical, electrical and thermal simulations. By inserting an InAlAs blocking layer, leakage current is effectively suppressed, leading to 50% reduction of threshold current together with better thermal stability. Through combined optical and electrical analyses, the insulation layer thickness is set to be 60 nm, where the device shows optimized overall performance.

  • Anomalous Ga incorporation into InGaAs microdiscs selectively grown on Si (111) 査読

    Tohma Watanabe, Masakazu Sugiyama, Yoshiaki Nakano

    2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS)   2016年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    The incorporation of Ga at the transition stage from InAs vertical growth to InGaAs lateral growth was investigated for the InGaAs microdiscs on a patterned Si (111) substrate by metal-organic vapor-phase epitaxy (MOVPE). X-ray diffraction reciprocal space mapping (XRD-RSM) of (331) plane clarified the extent of InGaAs lattice relaxation and solid Ga content as a function of the partial pressure of trimethyl-gallium (P-TMGa), which were correlated to the extent of lateral growth of the microdiscs. When P-TMGa was small, two types of InGaAs discs emerged neighboring with each other, extremely-lateral ones with partially-relaxed lattice and vertical ones with pseudo-morphic InGaAs to InAs. On the other hand, sufficiently-large P-TMGa resulted in uniform and moderately lateral discs with relaxed lattice. The results suggested the threshold of P-TMGa to initiate lateral growth of InGaAs in a coherent manner on all the InAs hexagonal pillars which were grown uniformly on the Si windows.

  • Effect of Built-in Electric Field on Miniband Structure and Carrier Nonradiative Recombination in InGaAs/GaAsP Superlattice Investigated Using Photoreflectance and Photoluminescence Spectroscopy 査読

    Tsubasa Nakamura, Kouki Matsuochi, Hidetoshi Suzuki, Tetsuo Ikari, Kasidit Toprasertpong, Masakazu Sugiyama, Yoshiaki Nakano, Atsuhiko Fukuyama

    Energy Procedia   102   121 - 125   2016年 (   ISSN:1876-6102 )

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    掲載種別:研究論文(国際会議プロシーディングス)  

    © 2016 The Authors. We investigated the effect of built-in electric field on miniband formation and carrier nonradiative recombination in a superlattice structure by using photoreflectance (PR) and photoluminescence (PL) spectroscopy for a strain-balanced InGaAs/GaAsP superlattice inserted in p-i-n GaAs solar cell and n-n GaAs structures. Two critical energies were obtained in the PR spectra, which corresponded to the energy differences between the Γ and π points in the mini-Brillouin zone of the first electron level and the first heavy hole level. The obtained miniband widths of both samples were same, which were smaller than the calculated values by using a flat-band structure model without a built-in electric field. From these results, it was deduced that the built-in electric field does not affect the miniband width. The PL signal intensity of the p-i-n structure samples did not change, whereas that of the n-n structure samples decreased with decreasing barrier thickness. We concluded that the radiative recombination probability decreases and the non-radiative recombination probability increases due to miniband formation.

    DOI: 10.1016/j.egypro.2016.11.326

  • Integrated Stokes Vector Analyzer on InP 査読

    Samir Ghosh, Yuto Kawabata, Takuo Tanemura, Yoshiaki Nakano

    2016 21ST OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC) HELD JOINTLY WITH 2016 INTERNATIONAL CONFERENCE ON PHOTONICS IN SWITCHING (PS)   2016年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    Stokes-vector modulation formats are gaining increasing interest for next-generation highspeed optical communication networks. We propose and demonstrate potentially low-cost monolithically integrated InP/InGaAsP waveguide-based Stokes vector analyzer to retrieve the state-of-polarization without using coherent detection.

  • Observation of mini-band formation in the ground and high-energy electronic states of super-lattice solar cells 査読

    Takanori Usuki, Kouki Matsuochi, Tsubasa Nakamura, Kasidit Toprasertpong, Atsuhiko Fukuyama, Masakazu Sugiyama, Yoshiaki Nakano, Tetsuo Ikari

    Proceedings of SPIE - The International Society for Optical Engineering   9743   2016年 (   ISSN:0277-786X   eISSN:1996-756X )

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    掲載種別:研究論文(国際会議プロシーディングス)  

    © 2016 SPIE. Multiple Quantum wells (MQWs) have been studied as one promising material for high-efficiency nextgeneration solar cells. However, a portion of photo-excited carriers recombine in MQWs, resulting in the degradation of cell performance. Super-lattice (SL) structures, where quantum states in neighboring quantum wells strongly couple with each other, have been proposed for the carrier collection improvement via the tunneling transport through mini-bands. Therefore, it is important to characterize mini-band formation in various types of SL structures. We examined p-i-n GaAs-based solar cells whose i layers contain 20 stacks of InGaAs/GaAsP MQW structures with 2.1-nm GaAsP barriers (thin-barrier cell), with 2.1-nm barriers and 3-nm GaAs interlayers in between GaAsP barriers and InGaAs wells (stepbarrier cell), and with 7.8-nm barriers (thick-barrier cell). We investigated the optical absorption spectra of the SL solar cells using piezoelectric photo-thermal (PPT) spectroscopy. In the thick-barrier cell, one exciton peak was observed near the absorption edge of MQWs. On the other hand, we confirmed a split of the exciton peak for the thin-barrier SL, suggesting the formation of mini-band. Moreover, in the step-barrier cell, the mini-band at the ground state disappears since thick GaAs interlayers isolate each quantum-well ground state and, instead, the mini-band formation of highenergy states could be observed. By estimating from the energy-level calculation, this is attributed to the mini-band formation of light-hole states. This can well explain the improvement of carrier collection efficiency (CCE) of the thinbarrier and the step-barrier cells compared with the thick-barrier cell.

    DOI: 10.1117/12.2214094

  • Quasi-Fermi level splitting evaluation based on electroluminescence analysis in multiple quantum-well solar cells for investigating cell performance under concentrated light 査読

    Tomoyuki Inoue, Kasidit Toprasertpong, Amaury Delamarre, Kentaroh Watanabe, Myriam Paire, Laurent Lombez, Jean François Guillemoles, Masakazu Sugiyama, Yoshiaki Nakano

    Proceedings of SPIE - The International Society for Optical Engineering   9743   2016年 (   ISSN:0277-786X   eISSN:1996-756X )

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    掲載種別:研究論文(国際会議プロシーディングス)  

    © 2016 SPIE. Insertion of InGaAs/GaAsP strain-balanced multiple quantum wells (MQWs) into i-regions of GaAs p-i-n solar cells show several advantages against GaAs bulk p-i-n solar cells. Particularly under high-concentration sunlight condition, enhancement of the open-circuit voltage with increasing concentration ratio in thin-barrier MQW cells has been reported to be more apparent than that in GaAs bulk cells. However, investigation of the MQW cell mechanisms in terms of I-V characteristics under high-concentration sunlight suffers from the increase in cell temperature and series resistance. In order to investigate the mechanism of the steep enhancement of open-circuit voltage in MQW cells under high-concentration sunlight without affected by temperature, the quasi-Fermi level splitting was evaluated by analyzing electroluminescence (EL) from a cell. Since a cell under current injection with a density Jinjhas similar excess carrier density to a cell under concentrated sunlight with an equivalent short-circuit current Jsc = Jinj, EL measurement with varied Jinj can approximately evaluate a cell performance under a variety of concentration ratio. In addition to the evaluation of quasi-Fermi level splitting, the external luminescence efficiency was also investigated with the EL measurement. The MQW cells showed higher external luminescence efficiency than the GaAs reference cells especially under high-concentration condition. The results suggest that since the MQW region can trap and confine carriers, the localized excess carriers inside the cells make radiative recombination more dominant.

    DOI: 10.1117/12.2212572

  • Photoelectrochemical Property Differences between NiO Dots and Layer on n-Type GaN for Water Splitting 査読

    Koike Kayo, Yamamoto Kazuhiro, Ohara Satoshi, Sugiyama Masakazu, Nakano Yoshiaki, Fujii Katsushi

    JOURNAL OF THE ELECTROCHEMICAL SOCIETY   163 ( 13 )   H1091 - H1095   2016年 (   ISSN:0013-4651 )

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    掲載種別:研究論文(学術雑誌)  

    DOI: 10.1149/2.1191613jes

  • Photonic crystal surface emitting lasers - coherent arrays and external feedback 査読

    R. J. E. Taylor, G. Li, P. Ivanov, D. T. D. Childs, B. J. Stevens, N. Babazadeh, O. Ignatova, Y. Nakano, T. Tanemura, R. A. Hogg

    2016 INTERNATIONAL CONFERENCE LASER OPTICS (LO)   2016年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    Electronic control of coherence in 2D arrays of photonic crystal surface emitting lasers is discussed.

  • Polarization manipulation in monolithic InP-based PICs 査読

    Takuo Tanemura, Yoshiaki Nakano

    Optics InfoBase Conference Papers   2016年

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    掲載種別:研究論文(国際会議プロシーディングス)  

    © OSA 2016. We review our recent progress in developing various InP-based devices for on-chip polarization multiplexing, modulation, and detection. We employ half-ridge InP/InGaAsP polarization converter as a building block to realize monolithic integration with active components.

    DOI: 10.1364/iprsn.2016.itu2a.4

  • Two-section RSOA with enhanced modulation-cancelling effect for self-seeded colorless WDM transmitter 査読

    Peng Zhou, Wenhui Zhan, Takuo Tanemura, Masaru Mukaikubo, Yoshiaki Nakano

    European Conference on Optical Communication, ECOC   157 - 159   2016年

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    掲載種別:研究論文(国際会議プロシーディングス)  

    © VDE VERLAG GMBH. Berlin. Offenbach. We propose and demonstrate novel RSOA design with segmented electrodes to enhance the modulation cancelling effect without sacrificing the bandwidth for self-seeded colorless WDM transmitter applications. Optimal driving condition is derived numerically and confirmed experimentally at 10 Gb/s.

  • Sub-Wavelength Metallic Laser Coupled to Silicon-on-Insulator Waveguide with Integrated Optical Feedback Stub for Q Factor Enhancement 査読

    Kaiyin Feng, Chuanqing Yu, Masaya Nishimoto, Richard J. E. Taylor, Takuo Tanemura, Yoshiaki Nakano

    2016 INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC)   2016年 (   ISSN:2326-5442 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    We propose a novel design of sub-wavelength metallic-cavity InP/InGaAs laser with unidirectional output on a silicon-on-insulator waveguide. By engineering the length and shape of the integrated optical feedback stub, formed on the non-output end of the waveguide, we improve the overall Q factor while maintaining confinement factor.

  • Comparison of Electron and Hole Mobilities in Multiple-Quantum-Well Solar Cells Using a Time-of-Flight Technique 査読

    K. Toprasertpong, T. Tanibuchi, H. Fujii, T. Kada, S. Asahi, K. Watanabe, M. Sugiyama, T. Kita, Y. Nakano

    IEEE Journal of Photovoltaics   5 ( 6 )   pp. 1613 - 1620   2015年11月

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1109/JPHOTOV.2015.2470131

  • Fabrication of InGaAs quantum nanodisk light-emitting diodes by fusion top-down process of bio-template and neutral beam etching 招待 査読

    A. Higo, C. Thomas, T. Kiba, J. Takyama, C.Y. Lee, Y. Tamura, I. Yamshita, M. Sugiyama, Y. Nakano, A. Murayama, S. Samukawa

    The 2015 E-MRS Fall meeting   2015年9月

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

  • Thin-film solar cells with InGaAs/GaAsP multiple quantum wells and a rear surface etched with light trapping micro-hole array 査読

    Kentaroh Watanabe, Tomoyuki Inoue, Hassanet Sodabanlu, Masakazu Sugiyama, Yoshiaki Nakano

    JAPANESE JOURNAL OF APPLIED PHYSICS   54 ( 8 )   2015年8月 (   ISSN:0021-4922   eISSN:1347-4065 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IOP PUBLISHING LTD  

    A light trapping effect in GaAs p-i-n solar cells with InGaAs/GaAsP multiple quantum wells (MQWs) in the i-layer was demonstrated by applying a light scattering texture to the rear surface of the cell. A thin-film MQW solar cell was successfully fabricated by metal organic vapor phase epitaxy (MOVPE) to grow an inverted n-i-p photovoltaic (PV) structure; this structure was then transferred to a Si support substrate to prevent optical loss due to free carrier absorption. For the light scattering texture, the use of both the wet-etched micro-hole arrayed SiO2 dielectric layer on the rear surface of the cell and the secondarily etched micro hole array on the GaAs layer was attempted. On the SiO2 layer, the micro hole array pattern was obtained by the radio frequency sputtering of the layer followed by wet etching with photolithographic patterning. On the GaAs layer, the micro-hole array pattern was obtained by direct etching through a SiO2 template. Compared with the light scattering effects of the micro-hole-arrayed SiO2 layer, the secondarily etched GaAs rear contact layer showed a significant improvement in external quantum efficiency (EQE) in the wavelength range from 855 to 1000 nm that corresponds to the photon absorption wavelength in MQWs. (C) 2015 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.54.08KA13

  • Microscopic observation of carrier-transport dynamics in quantum-structure solar cells using a time-of-flight technique 査読

    Toprasertpong Kasidit, Kasamatsu Naofumi, Fujii Hiromasa, Kada Tomoyuki, Asahi Shigeo, Wang Yunpeng, Watanabe Kentaroh, Sugiyama Masakazu, Kita Takashi, Nakano Yoshiaki

    Applied Physics Letters   107   pp. 043901 - 1-5   2015年7月 (   ISSN:0003-6951 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:AIP Publishing  

    In this study, we propose a carrier time-of-flight technique to evaluate the carrier transport time across a quantum structure in an active region of solar cells. By observing the time-resolved photoluminescence signal with a quantum-well probe inserted under the quantum structure at forward bias, the carrier transport time can be efficiently determined at room temperature. The

    DOI: 10.1063/1.4927612

  • Effect of ion species for the surface activated bonding of GaAs wafers on the characteristics of the bonded interfaces 査読

    Genki Kono, Masahisa Fujino, Daiji Yamashita, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano, Tadatomo Suga

    ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference   478 - 481   2015年5月

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    掲載種別:研究論文(国際会議プロシーディングス)  

    © 2015 The Japan Institute of Electronics Packaging. Effect of ion species for fast atom beam (FAB) irradiation of surface activated bonding (SAB) of GaAs wafers was investigated by current-voltage (I-V) measurements and transmission electron microscopy (TEM) observations. Ne,Ar,Kr and Xe gases were employed for FAB source. We confirm that it is possible to reduce the interfacial damage and improve the conductivity of GaAs/GaAs bonded interface by changing the ion species for FAB irradiation.

    DOI: 10.1109/ICEP-IAAC.2015.7111062

  • Effect of Barrier Thickness on Carrier Transport Inside Multiple Quantum Well Solar Cells Under High-Concentration Illumination 査読

    Warakorn Yanwachirakul, Hiromasa Fujii, Kasidit Toprasertpong, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano

    IEEE Journal of Photovoltaics   5 ( 3 )   846 - 853   2015年5月 (   ISSN:2156-3381 )

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    掲載種別:研究論文(学術雑誌)  

    © 2011-2012 IEEE. Carrier transport inside InGaAs/GaAs/GaAsP multiple quantum well (MQW) solar cells was discussed under high-concentrated sunlight illumination up to 338 suns. Current-voltage (I-V) characteristic curves for a GaAs reference cell and MQW cells with GaAsP barrier thickness of 2, 4, and 6 nm were investigated under dark and high-concentration illumination. Carrier collection efficiency (CCE) was estimated by net photocurrent, which is the difference between illuminated current and dark current density at each bias voltage normalized by the value at the saturated point. For the 2-nm barrier, CCE exhibited almost no degradation compared with the GaAs reference cell. On the other hand, CCE for the 6-nm barrier degraded with forward biases as the sunlight concentration ratio increased. The degradation in CCE under a high-concentration ratio is shown to be the result of carrier accumulation in quantum wells. Thin barriers seemed to eliminate such accumulation with the help of the carrier tunneling effect through the barriers.

    DOI: 10.1109/JPHOTOV.2015.2407159

  • Compact photonic crystal disk cavity optimized using the gentle confinement method and boundary design 査読

    Jon Oyvind Kjellman, Takuo Tanemura, Yoshiaki Nakano

    JAPANESE JOURNAL OF APPLIED PHYSICS   54 ( 4 )   2015年4月 (   ISSN:0021-4922   eISSN:1347-4065 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IOP PUBLISHING LTD  

    A compact, novel photonic crystal cavity aimed at applications with strict area limitations is presented. Optimization shows that the gentle confinement method previously used for line-defect cavities can be applied to more limited geometries. It also shows that it is paramount to consider the boundary region to minimize in-plane losses. The investigation show that a near optimum boundary thickness can be found by considering the boundary region as a Fabry-Perot resonator. This optimization strategy is shown to be deterministic in terms of resonance wavelength. For an optimized air-clad, silicon cavity, finite-difference time-domain simulations give Q-values as high as 75,000 which is comparable to other photonic crystal cavities of similar size. (c) 2015 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.54.042001

  • Thickness-modulated InGaAs/GaAsP superlattice solar cells on vicinal substrates 査読

    Hiromasa Fujii, Takumi Katoh, Kasidit Toprasertpong, Hassanet Sodabanlu, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano

    Journal of Applied Physics   117 ( 15 )   2015年4月 (   ISSN:0021-8979   eISSN:1089-7550 )

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    掲載種別:研究論文(学術雑誌)  

    © 2015 AIP Publishing LLC. InGaAs/GaAsP superlattice (SL) is a promising narrow-gap material for III-V multi-junction solar cells on Ge. In metal-organic vapor phase epitaxy (MOVPE) of SL on vicinal substrates, the component layers tend to be undulated due to step bunching occurring at high temperature. In this paper, the effects of growth temperature and thickness modulation of the SL-region on the photovoltaic performance were investigated. Lowering the growth temperature successfully enabled epitaxy of an extremely uniform SL, from which a clear step-like absorption spectrum including sharp exciton peaks was obtained due to layer-by-layer deposition of the individual layers. Larger layer undulation at higher temperature led to poorer in-plane coverage of the InGaAs region, resulting in the reduction of both light absorption and short circuit current. The open circuit voltage, on the other hand, was higher for the cells grown at higher temperature owing to suppressed dark current as a result of reduced crystal defects. Moreover, the lateral thickness variation of the GaAsP barriers in the undulated SL allowed efficient tunnel transport through the thinner part of the barrier, and improved the carrier collection and the fill factor. By optimizing the growth temperature for SL on vicinal substrates, an N-on-P cell including 100-period SL with a bandgap of 1.21eV achieved 1.11 times higher efficiency than a GaAs reference cell with 36% current enhancement as middle cell performance.

    DOI: 10.1063/1.4917535

  • Enhanced light trapping in multiple quantum wells by thin-film structure and backside grooves with dielectric interface 査読

    Tomoyuki Inoue, Kentaroh Watanabe, Kasidit Toprasertpong, Hiromasa Fujii, Masakazu Sugiyama, Yoshiaki Nakano

    IEEE Journal of Photovoltaics   5 ( 2 )   697 - 703   2015年3月 (   ISSN:2156-3381 )

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    掲載種別:研究論文(学術雑誌)  

    © 2011-2012 IEEE. Insertion of multiple quantum wells (MQWs) into the i-region of GaAs p-i-n solar cells can shift the effective bandgap to the optimal value for single-junction solar cells under high sunlight concentration. The quantum efficiency corresponding to the absorption by MQWs must be sufficiently high for achieving high-efficiency single-junction MQW solar cells. Here, we report light-trapping thin-film MQW solar cells for increasing photoabsorption in MQWs. In order to suppress the free-carrier absorption loss and enhance the light trapping, only the active layers including MQWs were processed to a cell by flip-chip bonding and dissolution of a conductive GaAs substrate. The periodic grooves formed on the back side of the cell scattered photons in the subbandgap range and trapped light inside the cell. For absorption loss reduction in a back contact metal, a dielectric interlayer was introduced between the metal and GaAs. The light-trapping structure resulted in a fivefold increase in effective optical path length compared with the physical thickness of MQWs. External quantum efficiency at wavelengths longer than the GaAs edge exceeded 50% with only 20-period MQWs. As a result, we achieved thin-film light-trapping MQW solar cells with 20% conversion efficiency.

    DOI: 10.1109/JPHOTOV.2015.2392941

  • Effect of CO2 Bubbling into Aqueous Solutions Used for Electrochemical Reduction of CO2 for Energy Conversion and Storage 査読

    Zhong Heng, Fujii Katsushi, Nakano Yoshiaki, Jin Fangming

    JOURNAL OF PHYSICAL CHEMISTRY C   119 ( 1 )   55 - 61   2015年1月 (   ISSN:1932-7447 )

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    掲載種別:研究論文(学術雑誌)  

    DOI: 10.1021/jp509043h

  • Absorption threshold extended to 1.15 eV using InGaAs/GaAsP quantum wells for over-50%-efficient lattice-matched quad-junction solar cells 査読

    Kasidit Toprasertpong, Hiromasa Fujii, Tomos Thomas, Markus Führer, Diego Alonso-Álvarez, Daniel J. Farrell, Kentaroh Watanabe, Yoshitaka Okada, Nicholas J. Ekins-Daukes, Masakazu Sugiyama, Yoshiaki Nakano

    Progress in Photovoltaics: Research and Applications   24 ( 4 )   533 - 542   2015年1月 (   ISSN:1062-7995 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Wiley  

    DOI: 10.1002/pip.2585

  • Compact Silicon Rib-Waveguide Electro-Absorption Modulator Using Multiple Indium-Tin-Oxide Layers 査読

    Miisafumi Ayata, Takuo Tanemura, Yoshiaki Nakano

    2015 IEEE 12TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP)   69 - 70   2015年 (   ISSN:1949-2081 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    We propose a novel practical design of silicon rib-waveguide electro-absorption modulator using two indium-tin oxide layers with optimized carrier densities. Efficient and low loss modulation is numerically demonstrated for a 1-mu m-long modulator.

  • Design and Experimental Investigation of Monolithic Polarization Controller with InGaAlAs/InAlAs Multiple Quantum Wells 査読

    Kentaro Suzuki, Yuto Kawabata, Takuo Tanemura, Yoshiaki Nakano

    2015 INTERNATIONAL CONFERENCE ON PHOTONICS IN SWITCHING (PS)   226 - 228   2015年 (   ISSN:2155-8515 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    We design active integrated polarization controller using half-ridge-waveguide polarization converter and InGaAlAs/InAlAs multiple-quantum-well-based phase shifters. From the numerical simulation and preliminary measurement, we demonstrate the feasibility of polarization switching to arbitrary state with less than 16.2-mW DC power consumption using a 5.6-mm-long device.

  • Concentrated Photovoltaic Electrochemical Cell (CPEC): A Route toward High-Efficiency, Cost-Effective Solar Hydrogen Production 査読

    Masakazu Sugiyama, Akihiro Nakamura, Kentaroh Watanabe, Yasuyuki Ota, Kensuke Nishioka, Yoshiaki Nakano, Katsushi Fujii

    2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)   2015年 (   ISSN:0160-8371 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    Solar hydrogen production is one of the most required technologies for the realization of sustainable energy systems which is independent of fossil fuel. The solar-to-hydrogen (STH) energy conversion efficiency for photocatalysts, which have been studied quite intensively for decades, remains much lower than 10%. The combination of photovoltaic and electrochemical cells, on the other hand, can easily achieve the STH efficiency over 10%. We here present the field demonstration of a system combining a concentrator photovoltaic (CPV) module and polymer electrolyzers, which led us to the STH efficiency of 17.1 %. A method will be presented to optimize the series/parallel connection between CPV and electrolyzers for maximizing the STH, which predicts 28% STH when 35%-efficient CPV module is used.

  • Lattice-Matched 3-Junction Cell with 1.2-eV InGaAs/GaAsP Superlattice Middle Cell for Improved Current Matching 査読

    Hassanet Sodabanlu, Hiromasa Fujii, Kentaroh Watanabe, Ryusuke Onitsuka, Takaaki Agui, Hiroyuki Juso, Tatsuya Takamoto, David Lackner, Frank Dimroth, Andreas W. Bett, Masakazu Sugiyama, Yoshiaki Nakano

    2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)   2015年 (   ISSN:0160-8371 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    A strain-compensated InGaAs/GaAsP superlattice (SL) was successfully integrated into the GaAs middle cell of a lattice-matched InGaP/GaAs/Ge triple junction (3J) solar cell. Wafer shuttle technology was employed for proof of concept because the growth of the SL was optimized for a different metalorganic vapor phase epitaxy (MOVPE) reactor from the one for conventional 3J cells, but an entire structure can be grown in a single reactor in the future. The SL extended the absorption edge of the middle cell from 875 nm of GaAs to 1150 nm. Consequently, the photo current generated in the SL middle cells was enhanced by approximately 30% compared to a normal GaAs middle cell, improving current matching among subcells. The performance of SL cell, especially photo-current, was affected by the structure of the SL middle cell and the regrowth condition of the InGaP top cell. The conversion efficiency reached approximately 37% under 100-sun. The results encourage the implementation of InGaAs/GaAsP SL for high efficiency multi junction solar cells (MJSCs) with reduced total layer thickness.

  • Investigation of carrier collection in multi-quantum well solar cells by luminescence spectra analysis 査読

    Amaury Delamarre, Hiromasa Fujii, Kentaroh Watanabe, Jean-Francois Guillemoles, Yoshiaki Nakano, Masakazu Sugiyama

    PHYSICS SIMULATION AND PHOTONIC ENGINEERING OF PHOTOVOLTAIC DEVICES IV   9358   2015年 (   ISSN:0277-786X )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:SPIE-INT SOC OPTICAL ENGINEERING  

    Multi-Quantum well solar cells (MQWSC) have been shown to present several advantages, among which are low dark currents and tunable bandgaps. They are especially suited for implementation in multi-junction cells, and are highly promising for absorbers in Hot Carrier Solar Cells (HCSC). Such applications require high concentration ratio, which arises the issue of collection efficiency. Whereas it is usually considered that collection in MQW is very close to unity at one sun, it has been shown to not be the case under high concentration at the maximum power point. We propose in this work to take advantage of the luminescence spectral variation to investigate the depth collection efficiency. In order to validate the model, a series of strain compensated InGaAs/GaAsP MQW solar cells with intentional variation of the MQW doping concentration are grown. This has the effect of switching the space charge region position and width as well as the electric field intensity. Recording the luminescence spectra at various illumination intensities and applied voltages, we show that the in-depth quasi-Fermi level splitting and thus collection properties can be probed. Other measurements (EQE, luminescence intensity variation) are shown to be consistent with these results. Regarding their use as HCSC, the luminescence of MQW solar cells has been mainly used so far for investigating the quasi-Fermi level splitting and the temperature. Our results improve our understanding by adding information on carrier transport.

    DOI: 10.1117/12.2081303

  • Strictly Non-Blocking 8x8 Silicon Photonic Switch Based on Optical Phased Array 査読

    Takuo Tanemura, Lennart Langouche, Yoshiaki Nakano

    ECOC 2015 41ST EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION   2015年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    Compact strictly non-blocking 8x8 silicon photonic switch based on optical phased array is designed and fabricated. Broadband (1530-1560 nm) switching with on-chip loss of 9.8 dB and response time below 25 mu s is demonstrated experimentally.

  • Uncooled (25-50 degrees C) Operation of Self-Seeded RSOA for Low-Cost Colorless WDM-PON Transmitter 査読

    Wenhui Zhan, Takuo Tanemura, Shunya Yamauchi, Masaru Mukaikubo, Yoshiaki Nakano

    ECOC 2015 41ST EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION   2015年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    Modulation-cancellation property of InGaAlAs/InP MQW reflective semiconductor optical amplifier (RSOA) and its temperature dependence are investigated for uncooled colorless WDM transmitter applications. Using the optimized RSOA length, we demonstrate self-seeded 2.5-Gb/s transmission over 25-km SSMF at 25 degrees C and 50 degrees C.

  • Quantum GaAs nanodisk light emitting diode fabricated by ultimate top-down neutral beam etching 査読

    Akio Higo, Takayuki Kiba, Yosuke Tamura, Cedric Thomas, Yunpeng Wang, Hassanet Sodabanlu, Junichi Takayama, Masakazu Sugiyama, Yoshiaki Nakano, Ichiro Yamashita, Akihiro Murayama, Seiji Samukawa

    Conference Digest - IEEE International Semiconductor Laser Conference   133 - 134   2014年12月 (   ISSN:0899-9406 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:Institute of Electrical and Electronics Engineers Inc.  

    Quantum dots (QDs) photonic devices based on III-V compound semiconductor are very attractive optoelectronic due to their thermal independence, low power consumption, and high-speed modulation. We have developed a defect-free, ultimate top-down nanofabrication process for sub-20-nm-diameter GaAs quantum nanodisks (NDs) by employing a bio template and neutral beam etching, and produced 8-nm-thick GaAs NDs embedded in an AlGaAs barrier regrown by the metal organic vapour phase epitaxy (MOVPE). We successfully fabricated a light emitting diode structure and observed the light emission from the quantum energy levels of NDs.

    DOI: 10.1109/ISLC.2014.199

  • GaAs/AlGaAs quantum nanodisks by using neutral beam etching and their optical response 査読

    Yosuke Tamura, Akio Higo, Takayuki Kiba, Cedric Thomas, Takeru Okada, Wang Yunpeng, Hassanet Sodabanlu, Masakazu Sugiyama, Yoshiaki Nakano, Akihiro Murayama, Seiji Samukawa

    The 6th IEEE International Nanoelectronics Conference 2014   2014年7月

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

  • Numerical Study on Fabrication Tolerance of Half-Ridge InP Polarization Converters 査読

    Masaru Zaitsu, Takuo Tanemura, Yoshiaki Nakano

    IEICE TRANSACTIONS ON ELECTRONICS   E97C ( 7 )   731 - 735   2014年7月 (   ISSN:1745-1353 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG  

    Integrated InP polarization converters based on half-ridge structure are studied numerically. We demonstrate that the fabrication tolerance of the half-ridge structure can be extended significantly by introducing a slope at the ridge side and optimizing the thickness of the residual InGaAsP layer. High polarization conversion over 90% is achieved with the broad range of the waveguide width from 705 to 915 nm, corresponding to a factor-of-two or larger improvement in the fabrication tolerance compared with that of the conventional polarization converters. Finally we present a simple fabrication procedure of this newly proposed structure, where the thickness of the residual InGaAsP layer is controlled precisely by using a thin etch-stop layer.

    DOI: 10.1587/transele.E97.C.731

    その他リンク: http://dblp.uni-trier.de/db/journals/ieicet/ieicet97c.html#journals/ieicet/ZaitsuTN14

  • Surface stabilities of n-type GaN dependent on electrolyte under photoelectrochemical reactions 査読

    Kayo Koike, Akihiro Nakamura, Masakazu Sugiyama, Yoshiaki Nakano, Katsushi Fujii

    Earth and Environmental Science Transactions of the Royal Society of Edinburgh   1647 ( 4 )   2014年1月 (   ISSN:1755-6929 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Cambridge University Press  

    The n-type GaN has stability problem of the surface anodic corrosion during the photoelectrochemical reaction for H2 generation. The photoelectrochemical surface stabilities of n-type GaN dependent on the electrolytes were investigated. The flatband potential in HCl obtained from Mott-Schottky plot shifted 0.1 V to positive direction compared with that in H2SO4. The variation of saturated photocurrent of 1 to 3 cycles in H2SO4 was much larger than that of HCl, NaOH and KOH. The surface morphologies also changed by the electrolytes. These results show the absorbed materials on the GaN electrode surface during the photoelectrochemical reactions were changed by the electrolyte and affected the surface reactions.

    DOI: 10.1557/opl.2014.172

  • Capsule-shaped metallic-cavity laser with reduced plasmonic loss 査読

    Baifu Zhang, Takuya Okimoto, Takuo Tanemura, Yoshiaki Nakano

    Optics InfoBase Conference Papers   2014年 (   ISSN:2162-2701 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:Optical Society of America (OSA)  

    We propose novel 1.55-μm capsule-shaped metallic-cavity lasers with curved facets to reduce plasmonic losses. Significant reduction of threshold current from 291 μA to 60 μA is demonstrated with effective modal volume of 0.45 μm3. © 2014 OSA.

    DOI: 10.1364/cleo_at.2014.jw2a.90

  • Effect of KHCO&lt;inf&gt;3&lt;/inf&gt;, K&lt;inf&gt;2&lt;/inf&gt;CO&lt;inf&gt;3&lt;/inf&gt; and CO&lt;inf&gt;2&lt;/inf&gt; on the electrochemical reduction of CO&lt;inf&gt;2&lt;/inf&gt; into organics on a Cu electrode for the solar energy conversion and storage 査読

    Heng Zhong, Katsushi Fujii, Yoshiaki Nakano

    Materials Research Society Symposium Proceedings   1640 ( January )   1 - 6   2014年 (   ISSN:0272-9172 )

     詳細

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:Materials Research Society  

    Electrochemical reduction of CO&lt
    inf&gt
    2&lt
    /inf&gt
    into useful organics combined with photovoltaics is thought to be one of the promising ways to effectively store and transport the solar energy. In most of the previous researches, CO&lt
    inf&gt
    2&lt
    /inf&gt
    bubbling in different solutions were used as the electrolyte. However, the effects of the electrolyte and the CO&lt
    inf&gt
    2&lt
    /inf&gt
    bubbling are not clear. Therefore, in this research, the effects of different electrolyte, CO&lt
    inf&gt
    2&lt
    /inf&gt
    bubbling, concentration of the electrolyte and temperature on the electrochemical reduction of CO&lt
    inf&gt
    2&lt
    /inf&gt
    on a Cu working electrode were studied. The results showed that the form of the carbon source in the electrolyte, such as HCO&lt
    inf&gt
    3&lt
    /inf&gt
    -, CO&lt
    inf&gt
    3&lt
    /inf&gt
    &lt
    sup&gt
    2-&lt
    /sup&gt
    and H&lt
    inf&gt
    2&lt
    /inf&gt
    CO&lt
    inf&gt
    3&lt
    /inf&gt
    , had a strong effect on this reaction, which was controlled by the pH of the electrolyte. Furthermore, high concentration of the HCO&lt
    inf&gt
    3&lt
    /inf&gt
    - and elevated temperature can strongly improve the reaction current density.

    DOI: 10.1557/opl.2014.404

  • Development of the Monolighically Interconnected InGaP/GaAs Dual Junction Solar Cell with Bypass Diode for Ultrahigh Concentrator Application 査読

    Kentaroh Watanabe, Minato Seno, Masakazu Sugiyama, Yoshiaki Nakano

    2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)   559 - 561   2014年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    The monolithic integrated series-connected InGaP/GaAs dual junction (2J) cells with bypass diodes were demonstrated in order to achieve the ultra high concentrator application. The current-voltage (I-V) characteristics for 10 series-connected 2J cell under the dark condition showed each sub-cell was successfully interconnected each other. Epitaxially grown 2J solar cell on the semi-insulating (SI) GaAs substrate was used for electrical isolation. However, the significant deterioration of the fill factor (FF) in light I-V was apparent due to the current leakage caused by intrinsic carrier excitation in SI-GaAs. Finally, improved cell performance was achieved by applying shading layer for preventing illumination to the SI-GaAs layer.

  • Quantum GaAs Nanodisk Light Emitting Diode Fabricated by Ultimate Top-down Neutral Beam Etching 査読

    Akio Higo, Takayuki Kiba, Yosuke Tamura, Cedric Thomas, Yunpeng Wang, Hassanet Sodabanlu, Junichi Takayama, Masakazu Sugiyama, Yoshiaki Nakano, Ichiro Yamashita, Akihiro Murayama, Seiji Samukawa

    2014 24TH IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC 2014)   133 - 134   2014年 (   ISSN:2326-5442 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE COMPUTER SOC  

    Quantum dots (QDs) photonic devices based on III-V compound semiconductor are very attractive optoelectronic due to their thermal independence, low power consumption, and high-speed modulation. We have developed a defect-free, ultimate top-down nanofabrication process for sub-20-nm-diameter GaAs quantum nanodisks (NDs) by employing a biotemplate and neutral beam etching, and produced 8-nm-thick GaAs NDs embedded in an A1GaAs barrier regrown by the metalorganic vapor phase epitaxy (MOVPE). We successfully fabricated a light emitting diode structure and observed the light emission from the quantum energy levels of NDs.

    DOI: 10.1109/ISLC.2014.45

  • Synthesis of CaMn&lt;inf&gt;2&lt;/inf&gt;O&lt;inf&gt;4&lt;/inf&gt;-related electrocatalyst for Oxygen evolution electrode of watersplitting 査読

    Yuya Taki, Zhenquan Tan, Satoshi Ohara, Takashi Itoh, Yoshiaki Nakano, Katsushi Fujii, Masakazu Sugiyama

    Materials Research Society Symposium Proceedings   1640 ( January )   12 - 17   2014年 (   ISSN:0272-9172 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:Materials Research Society  

    Water-splitting by using electric power produced by solar cells is promising system to produce hydrogen without fossil fuels. Oxygen evolving catalyst is, however, major problem to prevent using this system widely because precious materials are used in the catalyst. Considering from the photosynthesis II of plants, the compound of Ca-Mn-0 is one of the candidates for the oxygen evolving catalyst. In this study, the synthesis condition and the oxygen evolving electrocatalytic activity of CaMn&lt
    inf&gt
    2&lt
    /inf&gt
    O&lt
    inf&gt
    4&lt
    /inf&gt
    •xH&lt
    inf&gt
    2&lt
    /inf&gt
    O are investigated. The overpotential at 0.1 mA/cm&lt
    sup&gt
    2&lt
    /sup&gt
    was 0.28 V when using the electrode of carbon paste and CaMn&lt
    inf&gt
    2&lt
    /inf&gt
    O&lt
    inf&gt
    4&lt
    /inf&gt
    •H&lt
    inf&gt
    2&lt
    /inf&gt
    O with the weight ratio of 3:1.

    DOI: 10.1557/opl.2014.406

  • The Fabrication of GaAs Quantum Nanodisks Combination of Biotemplate, Neutral Beam 査読

    Akio Higo, Yosuke Tamura, Takayuki Kiba, Cedric Thomas, Wang Yunpeng, Masakazu Sugiyama, Yoshiaki Nakano, Akihiro Murayama, Seiji Samukawa

    IEEE Nanotechnology Materials and Device Conference   2013年10月

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

  • Compact Optical Buffer Module for Intra-Packet Synchronization Based on InP 1×8 Switch and Silica-Based Delay Line Circuit. 査読

    Myung-Joon Kwack, Tomofumi Oyama, Yasuaki Hashizume, Shinji Mino, Masaru Zaitsu, Takuo Tanemura, Yoshiaki Nakano

    IEICE Transactions   E96C ( 5 )   738 - 743   2013年5月 (   ISSN:1745-1353 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1587/transele.E96.C.738

    その他リンク: http://dblp.uni-trier.de/db/journals/ieicet/ieicet96c.html#journals/ieicet/KwackOHMZTN13

  • Experimental demonstration of self-aligned InP/InGaAsP polarization converter for polarization multiplexed photonic integrated circuits 査読

    Masaru Zaitsu, Takuo Tanemura, Akio Higo, Yoshiaki Nakano

    OPTICS EXPRESS   21 ( 6 )   6910 - 6918   2013年3月 (   ISSN:1094-4087 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:OPTICAL SOC AMER  

    Highly efficient, low-loss, and compact InP/InGaAsP polarization converter based on a half-ridge waveguide structure is fabricated and demonstrated experimentally. The device is fabricated by a simple self-aligned process and integrated with a ridge InP waveguide. Using a 150-mu m-long device, we obtain the mode conversion of more than 96% and the on-chip loss of less than 1.0 dB over the broad wavelength range from 1510 to 1575 nm. The experimental results are explained quantitatively using the full-vector eigenmode calculation, which also reveals large fabrication tolerance of the demonstrated device. (C) 2013 Optical Society of America

    DOI: 10.1364/OE.21.006910

  • Analysis For Current-Voltage Characteristics Of The InGaAs/GaAsP Super-Lattice Solar Cells Under Optical Concentration 査読

    Kentaroh Watanabe, Yunpeng Wang, Hassanet Sodabanlu, Masakazu Sugiyama, Yoshiaki Nakano

    9TH INTERNATIONAL CONFERENCE ON CONCENTRATOR PHOTOVOLTAIC SYSTEMS (CPV-9)   1556   62 - 66   2013年 (   ISSN:0094-243X )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:AMER INST PHYSICS  

    Novel band engineering material of a super-lattice (SL) consists of strain-balanced InGaAs and GaAsP was applied to GaAs p-i-n single junction solar cells. The SL solar cell sample with 60 periods of 5.4-nm-thick In0.13Ga0.87As well and 3.1-nm-thick GaAs0.75P0.25 barrier showed extended quantum efficiency cutoff from 870 nm to 930 nm, resulted in substantial increment of short circuit current density Delta JSC= 2.1 mA/cm(2). Comparing current-voltage (I-V) characteristics under the different illumination condition from 1SUN to 200 SUN for the bulk GaAs cell and the SL cell, the fraction of Delta JSC was constant in this range. And the increasing dependency of open circuit voltage (VOC) of SL cell on concentration ratio showed steeper tendency than the bulk GaAs cell. Finally the SL cell achieved larger conversion efficiency (eta) than the bulk GaAs p-i-n junction solar cell under &gt; 100 SUN.

    DOI: 10.1063/1.4822200

  • Capacitance Measurements For AlGaN/GaN Photoelectrochemical Electrode By Using Electrolyte Contact and By Metal Contact 査読

    Nakamura Akihiro, Sugiyama Masakazu, Fujii Katsushi, Nakano Yoshiaki

    SOLAR CHEMICAL ENERGY STORAGE (SOLCHES)   1568   28 - 30   2013年 (   ISSN:0094-243X )

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    掲載種別:研究論文(学術雑誌)  

    DOI: 10.1063/1.4848084

  • Development of a vertical optical coupler using a slanted etching of InP/InGaAsP waveguide 査読

    Sunghan Choi, Akio Higo, Masaru Zaitsu, Myung-Joon Kwack, Masakazu Sugiyama, Hiroshi Toshiyoshi, Yoshiaki Nakano

    IEICE ELECTRONICS EXPRESS   10 ( 6 )   20130116   2013年 (   ISSN:1349-2543 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG  

    We demonstrate a simple and efficient optical coupler for vertical coupling between optical fibers and InP-based waveguides using a slant-etched mirror. The angle of the etched mirror can be controlled by using an aluminum jig with a beveled surface inserted under the substrate during RIE (reactive ion etching) of InP/InGaAsP. The off-chip coupler is fabricated simultaneously with a high-mesa waveguide with only one etching process. Coupling loss of 7.3 dB between the tapered single-mode fibers is obtained within the wavelength of 1530-1570 nm.

    DOI: 10.1587/elex.10.20130116

  • Preface: International workshop on solar chemical energy storage 査読

    Yoshiaki Nakano, Masakazu Sugiyama

    AIP Conference Proceedings   1568   1 - 2   2013年 (   ISSN:0094-243X   eISSN:1551-7616 )

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    掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1063/1.4848077

  • Performance Of Monolithic Integrated Series-Connected GaAs Solar Cells Under Concentrated Light 査読

    Minato Seno, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano

    9TH INTERNATIONAL CONFERENCE ON CONCENTRATOR PHOTOVOLTAIC SYSTEMS (CPV-9)   1556   26 - 29   2013年 (   ISSN:0094-243X )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:AMER INST PHYSICS  

    The concentrator photovoltaic (CPV) system provides excellent cost performance and conversion efficiency by increasing the concentration ratio. The problem is that concentration ratio is limited by short-circuit current density (J(sc)) due to cell resistance loss. In order to achieve much larger concentration ratio, the monolithically integrated series-connected GaAs photovoltaic (PV) cells were fabricated. By dividing a cell into sub-cells on a chip and connecting them in series, the cell provides smaller short-circuit current (I-sc) and larger open-circuit voltage (V-oc). This approach can reduce joule energy loss inside a cell without decreasing electrical power output and allow much larger concentration ratio. In our design, 10 series-connected sub-cells, with bypass diodes in parallel with each sub-cell, were integrated monolithically on semi-insulating GaAs. When some sub-cells in the array were shaded, the bypass diodes prevented the shaded sub-cells from breakdown and reduced fluctuation of power output. The detection area of a unit cell was 1.73 mm(2) and an entire detection area occupied over 68% of the whole chip area. The arrayed 10 cells exhibited V-oc of 9.0 V under illumination (AM 1.5G). The series-connected cell achieved maximum efficiency at higher concentration ratio than non-series-connected cell.

    DOI: 10.1063/1.4822191

  • A Superlattice Solar Cell With Enhanced Short-Circuit Current and Minimized Drop in Open-Circuit Voltage 査読

    Yunpeng Wang, Yu Wen, Hassanet Sodabanlu, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano

    IEEE JOURNAL OF PHOTOVOLTAICS   2 ( 3 )   387 - 392   2012年7月 (   ISSN:2156-3381 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC  

    A quantum-well (QW) solar cell including InGaAs wells is a promising candidate for the purpose of current matching in InGaP/GaAs/Ge tandem solar cells by extending the edge of quantum efficiency to longer wavelengths. Even though QWs increase short-circuit current by the extended effective band edge, they tend to obstruct carrier transport and degrade the efficiency of a cell. Therefore, a superlattice (SL) structure has been proposed to prevent the recombination of carriers inside of the wells and, more importantly, to enable carriers to tunnel to a neighboring well, leading to an efficient carrier transportation in such a photovoltaic device. In this paper, a SL solar cell was implemented with a strain-balancing technique. It exhibited excellent performance: Enhanced photocurrent (3.0 mA/cm(2)) with minimized drop (0.03 V) in open-circuit voltage. Behind these achievements, substantial contribution of tunneling transport has been confirmed for the SL cell by external quantum efficiency measurement at 77 K.

    DOI: 10.1109/JPHOTOV.2012.2187044

  • Dark current reduction of Ge photodetector by GeO2 surface passivation and gas-phase doping 査読

    Takenaka Mitsuru, Morii Kiyohito, Sugiyama Masakazu, Nakano Yoshiaki, Takagi Shinichi

    OPTICS EXPRESS   20 ( 8 )   8718 - 8725   2012年4月 (   ISSN:1094-4087 )

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    掲載種別:研究論文(学術雑誌)  

    DOI: 10.1364/OE.20.008718

  • Enhanced Carrier Escape in MSQW Solar Cell and Its Impact on Photovoltaics Performance 査読

    Yu Wen, Yunpeng Wang, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano

    IEEE JOURNAL OF PHOTOVOLTAICS   2 ( 2 )   221 - 226   2012年4月 (   ISSN:2156-3381 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC  

    A multiple stepped quantum wells (MSQWs) solar cell, in which GaAs stepped-potential layers are sandwiched between strain-balanced InGaAs wells and GaAsP barriers, has been proposed, and improvements in short-circuit current and fill factor have been demonstrated. We have studied carrier recombination dynamics and carrier escape kinetics from the wells, comparing the MSQW with the normal multiple quantum well (MQW). Carrier recombination rate was examined by time-resolved photoluminescence (PL) and a longer carrier lifetime was observed for MSQWs than for MQWs. Carrier escape from the wells was also investigated in terms of temperature-dependent PL. Smaller thermal activation energy was observed for MSQWs than for MQWs. Carrier radiative recombination loss was investigated by bias-dependent PL, and it was found to be smaller for the MSQW than for the normal MQW. Such advantages of the MSQW allowed us to stack a sufficient number of quantum wells to increase short-circuit current without degrading fill factor. For normal MQW solar cells, degradation in fill factor is unavoidable.

    DOI: 10.1109/JPHOTOV.2012.2185684

  • Ultra-high efficiency photovoltaic cells for large scale solar power generation 査読

    Yoshiaki Nakano

    Ambio   41 ( 2 )   125 - 131   2012年3月 (   ISSN:0044-7447 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    The primary targets of our project are to drastically improve the photovoltaic conversion efficiency and to develop new energy storage and delivery technologies. Our approach to obtain an efficiency over 40% starts from the improvement of III-V multi-junction solar cells by introducing a novel material for each cell realizing an ideal combination of bandgaps and lattice-matching. Further improvement incorporates quantum structures such as stacked quantum wells and quantum dots, which allow higher degree of freedom in the design of the bandgap and the lattice strain. Highly controlled arrangement of either quantum dots or quantum wells permits the coupling of the wavefunctions, and thus forms intermediate bands in the bandgap of a host material, which allows multiple photon absorption theoretically leading to a conversion efficiency exceeding 50%. In addition to such improvements, microfabrication technology for the integrated high-efficiency cells and the development of novel material systems that realizes high efficiency and low cost at the same time are investigated. © Royal Swedish Academy of Sciences 2012.

    DOI: 10.1007/s13280-012-0267-4

  • All-Optical Flip-Flop Based on Coupled-Mode DBR Laser Diode for Optically Clocked Operation 査読

    Masaru Zaitsu, Akio Higo, Takuo Tanemura, Yoshiaki Nakano

    IEICE TRANSACTIONS ON ELECTRONICS   E95C ( 2 )   218 - 223   2012年2月 (   ISSN:0916-8524   eISSN:1745-1353 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG  

    A novel type of optically clocked all-optical flip-flop based on a coupled-mode distributed Braggw reflector laser diode is proposed. The device operates as a bistable laser, where the two lasing modes at different wavelength are switched all-optically by injecting a clock pulse together with a set/reset signal. We employ an analytical model based on the two-mode coupled rate equations to verify the basic operation of the device numerically. Optically clocked flip-flop operation is obtained with a set/reset power of 0.60 mW and clock power of 1.8 mW. The device features simple structure, small footprint, and synchronized all-optical flip-flop operation, which should be attractive in the future digital photonic integrated circuits.

    DOI: 10.1587/transele.E95.C.218

    その他リンク: http://dblp.uni-trier.de/db/journals/ieicet/ieicet95c.html#journals/ieicet/ZaitsuHTN12

  • Design and Simulation of InP 1 x N Planar Optical Switch Based on Beam Deflection 査読

    Sooheuk Che, Masaru Zaitsu, Akio Higo, Yoshiaki Nakano

    IEICE TRANSACTIONS ON ELECTRONICS   E95C ( 2 )   213 - 217   2012年2月 (   ISSN:1745-1353 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG  

    We propose a novel 1 x 3 planar optical switch using aspheric lenses and carrier-induced tunable prisms on InP. An input light beam is collimated by the aspheric lenses in a slab waveguide. The tunable prism, whose refractive indices are tuned by the carrier plasma effect, deflect the collimated light beam and guide it to the output ports. The switching operations of the I x 3 optical switch that consists of five lenses and eight prisms with a footprint of 500 x 3500 mu m are performed by three-dimensional beam propagation methods:A static switching operation with a 5-dB insertion loss and a 13-dB extinction ratio is obtained with 70-mA current injection for each prism. This device has a simple structure and low power consumption and may be useful for optical packet switching systems.

    DOI: 10.1587/transele.E95.C.213

    その他リンク: http://dblp.uni-trier.de/db/journals/ieicet/ieicet95c.html#journals/ieicet/CheZHN12

  • A quantum-well superlattice solar cell for enhanced current output and minimized drop in open-circuit voltage under sunlight concentration 査読

    Masakazu Sugiyama, Yunpeng Wang, Hiromasa Fujii, Hassanet Sodabanlu, Kentaroh Watanabe, Yoshiaki Nakano

    Journal of Physics D: Applied Physics   46 ( 2 )   2012年1月 (   ISSN:0022-3727 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    Insertion of quantum wells (QWs) extends the absorption edge to a longer wavelength than the value of a p-i-n cell without the QWs, which is preferable for the improved current matching of a InGaP/GaAs/Ge multijunction cell. The QWs, however, reduce the open-circuit voltage (Voc) and degrade the fill factor
    the latter is significant for a large number of QWs that are mandatory for sufficient light absorption. As a structure to minimize these drawbacks, a QW superlattice, a strain-balanced In0.13Ga 0.86As (4.7 nm)/GaAs0.57P0.43 (3.1 nm) stack, was implemented by metalorganic vapour-phase epitaxy. It brought about an enhancement in short-circuit current density (3.0 mA cm-2) with a minimal drop in Voc(0.03 V) compared with a p-i-n cell without the superlattice. The collection efficiency of photocarriers from the wells to an external circuit was evaluated: the efficiency was above 0.95 for the superlattice, while it was below 0.8 at a large forward bias for a conventional QW cell with thicker barriers. With the fast electron-hole separation in the superlattice owing to tunnelling transport, the superlattice cell exhibited a steeper increase in Voc as a function of the sunlight concentration ratio than the conventional QW cell: at the concentration ratio of 50, the value of Voc for the superlattice cell was almost equivalent to the value of the GaAs p-i-n cell without QWs. As a possible mechanism behind such an enhancement in Voc, photocurrent generation by two-step photon absorption was observed, using the electron ground state of the superlattice as an intermediate state. © 2013 IOP Publishing Ltd.

    DOI: 10.1088/0022-3727/46/2/024001

  • Suppressed indium diffusion and enhanced absorption in InGaAs/GaAsP stepped quantum well solar cell 査読

    Yu Wen, Yunpeng Wang, Yoshiaki Nakano

    APPLIED PHYSICS LETTERS   100 ( 5 )   2012年1月 (   ISSN:0003-6951   eISSN:1077-3118 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:AMER INST PHYSICS  

    A between strain-balanced InGaAs wells and GaAsP barriers, has been proposed and improvements in sub-GaAs-bandgap QE have been demonstrated. We have studied the effect of indium diffusion on the optical properties in quantum well solar cell by measuring the absorptance and photoluminescence spectra. Theoretical calculations indicate that the transition energy level and the absorption magnitude are sensitive to indium diffusion. The MSQW structure with GaAs step layer is a feasible way to suppress indium diffusion and enhance the absorption. (C) 2012 American Institute of Physics. [doi:10.1063/1.3681785]

    DOI: 10.1063/1.3681785

  • Exploring the potential of quantum wells for efficiency enhancement in photovoltaic cells 査読

    Masakazu Sugiyama, Yunpeng Wang, Hiromasa Fujii, Hassanet Sodabanlu, Yu Wen, Kentaroh Watanabe, Yoshiaki Nakano

    PHYSICS, SIMULATION, AND PHOTONIC ENGINEERING OF PHOTOVOLTAIC DEVICES   8256   2012年 (   ISSN:0277-786X )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:SPIE-INT SOC OPTICAL ENGINEERING  

    A quantum-well suparlattice cell, in which In0.13Ga0.86As (4.7 nm) / GaAs0.57P0.43 (3.1 nm) strain-balanced quantum wells are inserted in the intrinsic region of a GaAs pin cell, has been implemented by metalorganic vapor-phase epitaxy (MOVPE) and has exhibited an enhanced short-circuit current density, with an increment of 3.0 mA/cm(2) and a minimal drop in open-circuit voltage (0.03 V) compared to a pin cell without the superlattice. The collection efficiency of photocarriers, which are generated in a cell upon the irradiation of monochromatic light, to an external circuit has been evaluated for both the superlattice cell and a conventional quantum-well cell with thicker wells and barriers. This carrier collection efficiency is was above 0.95 for the superlattice cell, regardless of a wavelength and an external bias, while the value for the quantum-well cell degraded to be below 0.8 at a large forward bias, which evidenced superior carrier transport with the help of tunneling through the thin barriers. With such a fast electron-hole separation in the superlattice, photo-current generation by two-step photon absorption has been observed, using the electron ground state of the superlattice as an intermediate band.

    DOI: 10.1117/12.911078

  • Monolithic integration of semipolar pyramidal LEDs with tailored wavelengths 査読

    Masakazu Sugiyama, Tatsuki Fujiwara, Yoshiaki Nakano

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4   9 ( 3-4 )   476 - 479   2012年 (   ISSN:1862-6351 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:WILEY-V C H VERLAG GMBH  

    Aiming at monolithic in-plane integration of light emitters with multiple wavelengths in a designed manner, InGaN/GaN multiple quantum wells (MQWs) on the semipolar planes of GaN hexagonal pyramids were grown in selective growth windows surrounded by the masks with varied widths (40-240 mu m). Growth rate of the pyramid was modulated by a factor of 3 with an increase in the mask width. Its tendency was in accordance with the accumulation of a precursor in the vicinity of the selective area, which was numerically estimated assuming vapourphase diffusion and surface incorporation of the precursor. Peak wavelength modulation in both cathode luminescence and electro luminescence from the MQWs were observed, and both peaks exhibited similar dependencies on the mask width, which was related to an increase in the thickness of InGaN wells. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

    DOI: 10.1002/pssc.201100443

  • Photoelectrochemical Properties of InxGa1-xN/GaN Multiquantum Well Structures in Depletion Layers 査読

    Fujii Katsushi, Nakamura Shinichiro, Yokojima Satoshi, Goto Takenari, Yao Takafumi, Sugiyama Masakazu, Nakano Yoshiaki

    JOURNAL OF PHYSICAL CHEMISTRY C   115 ( 50 )   25165 - 25169   2011年12月 (   ISSN:1932-7447 )

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    掲載種別:研究論文(学術雑誌)  

    DOI: 10.1021/jp2088324

  • Effect of GaAs Step Layer on InGaAs/GaAsP Quantum Well Solar Cells 査読

    Yu Wen, Yunpeng Wang, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano

    APPLIED PHYSICS EXPRESS   4 ( 12 )   2011年12月 (   ISSN:1882-0778 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:JAPAN SOC APPLIED PHYSICS  

    In order to develop a high-quality material that is lattice-matched to GaAs for III-V tandem solar cells, we introduce In0.16Ga0.84As/GaAs/GaAs0.79P0.21 strain-compensated multiple stepped quantum well (SC-MSQW). To maximize the contribution of the quantum well to the spectral response, we inserted a GaAs step layer between well and barrier. This leads to a stronger photoabsorption by the wells and enhanced carrier transport in the stacked wells. A short-circuit current density of 19.29 mA/cm(2) was obtained under AM1.5G illumination, which is approximately 14% higher than that of a conventional quantum well solar cell. (C) 2011 The Japan Society of Applied Physics

    DOI: 10.1143/APEX.4.122301

  • Strain-compensation measurement and simulation of InGaAs/GaAsP multiple quantum wells by metal organic vapor phase epitaxy using wafer-curvature 査読

    ShaoJun Ma, Hassanet Sodabanlu, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano

    JOURNAL OF APPLIED PHYSICS   110 ( 11 )   2011年12月 (   ISSN:0021-8979 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:AMER INST PHYSICS  

    Precise strain compensation for lattice-mismatched quantum wells is crucial for obtaining high performance devices such as quantum well solar cells. High-accuracy in situ curvature monitoring is a more efficient tool to adjust growth conditions for perfect strain balancing, and we have achieved curvature measurement during growth of InGaAs/GaAsP multiple quantum wells by metal organic vapor phase epitaxy. We have also developed the curvature calculation model taking into account of thermal expansion and lattice relaxation effects based on Stoney's equation. The measured periodical curvature behavior corresponds to the growth of compressive InGaAs well layers and tensile GaAsP barrier layers and fits perfectly with a theoretical curve assuming the structural parameters (thicknesses and atomic contents) obtained by x-ray diffraction analysis, confirming correctness of the developed calculation method. Considering the proper thermal expansion coefficients for InGaAs and GaAsP, we have obtained much accurate fitting results for measured curvature. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3663309]

    DOI: 10.1063/1.3663309

  • Sub-10-nm Extremely Thin Body InGaAs-on-Insulator MOSFETs on Si Wafers With Ultrathin Al2O3 Buried Oxide Layers 査読

    Masafumi Yokoyama, Ryo Iida, Sanghyeon Kim, Noriyuki Taoka, Yuji Urabe, Hideki Takagi, Tetsuji Yasuda, Hisashi Yamada, Noboru Fukuhara, Masahiko Hata, Masakazu Sugiyama, Yoshiaki Nakano, Mitsuru Takenaka, Shinichi Takagi

    IEEE ELECTRON DEVICE LETTERS   32 ( 9 )   1218 - 1220   2011年9月 (   ISSN:0741-3106 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC  

    We have demonstrated sub-10-nm extremely thin body (ETB) InGaAs-on-insulator (InGaAs-OI) nMOSFETs on Si wafers with Al2O3 ultrathin buried oxide (UTBOX) layers fabricated by direct wafer bonding process. We have fabricated the ETB InGaAs-OI nMOSFETs with channel thicknesses of 9 and 3.5 nm. The 9-nm-thick ETB InGaAs-OI nMOSFETs with a doping concentration (N-D) of 10(19) cm(-3) exhibit a peak electron mobility of 912 cm(2)/V . s and a mobility enhancement factor of 1.7 times against the Si nMOSFET at a surface carrier density (N-s) of 3 x 10(12) cm(-2). In addition, it has been found that, owing to Al2O3 UTBOX layers, the double-gate operation improves the cutoff properties. As a result, the highest on-current to the lowest off-current (I-on/I-off) ratio of approximately 10(7) has been obtained in the 3.5-nm-thick ETB InGaAs-OI nMOSFETs. These results indicate that the high-mobility III-V nMOSFETs can be realized even in sub-10-nm-thick channels.

    DOI: 10.1109/LED.2011.2158568

    その他リンク: http://orcid.org/0000-0001-6802-3346

  • Continuous wavelength modulation of semi-polar plane InGaN/GaN MQWs based on vapor-phase-diffusion-based selective-area pyramidal growth 査読

    Tatsuki Fujiwara, Yoshiaki Nakano, Masakazu Sugiyama

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   208 ( 5 )   1203 - 1205   2011年5月 (   ISSN:1862-6300 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:WILEY-BLACKWELL  

    We have achieved continuous wavelength modulation from InGaN quantum wells on semi-polar {11-22} planes with selective-area growth of hexagonal pyramids with varied widths of masks surrounding them. The thickness of InGaN wells on the surface of the pyramids was tailored by the mask width, which led to wavelength modulation. The use of semi-polar planes reduced quantum confined stark effect, allowing a wider range of wavelength modulation: from 446 to 500 nm as measured by cathode luminescence. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

    DOI: 10.1002/pssa.201000942

  • Ultrathin Body InGaAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors with InP Passivation Layers on Si Substrates Fabricated by Direct Wafer Bonding 査読

    Masafumi Yokoyama, Hideki Takagi, Tetsuji Yasuda, Hisashi Yamada, Noboru Fukuhara, Masahiko Hata, Masakazu Sugiyama, Yoshiaki Nakano, Mitsuru Takenaka, Shinichi Takagi

    APPLIED PHYSICS EXPRESS   4 ( 5 )   2011年5月 (   ISSN:1882-0778 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:JAPAN SOC APPLIED PHYSICS  

    We demonstrated the formation of ultrathin-body (UTB) III-V-semiconductor-on-insulator (III-V-OI) n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) on Si by low-damage direct wafer bonding, where channel thickness was been reduced to 7 nm. However, we found a significant reduction of the effective mobility of the InGaAs-OI nMOSFETs upon thinning InGaAs channels without surface passivation layers. Instead, we demonstrated the high electron mobility of 1004 cm(2).V(-1).s(-1) in a 9-nm-thick InGaAs-OI nMOSFET with an InP surface passivation layer. This finding indicates that the proper surface passivation is important in realizing the high-performance UTB III-V-OI nMOSFETs. (C) 2011 The Japan Society of Applied Physics

    DOI: 10.1143/APEX.4.054202

    その他リンク: http://orcid.org/0000-0001-6802-3346

  • Monolithically integrated low-loss three-dimensional spot-size converter and silicon photonic waveguides constructed by nanotuned Bosch process and oxidation 査読

    Li Ling-Han, Higo Akio, Sugiyama Masakazu, Nakano Yoshiaki

    JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS   10 ( 2 )   2011年4月 (   ISSN:1932-5150 )

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    掲載種別:研究論文(学術雑誌)  

    DOI: 10.1117/1.3574143

  • Large-Capacity Compact Optical Buffer Based on InP Integrated Phased-Array Switch and Coiled Fiber Delay Lines 査読

    Takuo Tanemura, Ibrahim Murat Soganci, Tomofumi Oyama, Takaharu Ohyama, Shinji Mino, Kevin A. Williams, Nicola Calabretta, H. J. S. Dorren, Yoshiaki Nakano

    JOURNAL OF LIGHTWAVE TECHNOLOGY   29 ( 4 )   396 - 402   2011年2月 (   ISSN:0733-8724   eISSN:1558-2213 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC  

    Optical buffering has been one of the major technical challenges in realizing optical packet switching (OPS) routers. While fiber-delay-line-based (FDL) buffers are the most practical and realistic solution to offer useful amount of capacity, the bulkiness of long FDLs and optical switches has been the main obstacle to practical implementation. This paper demonstrates a compact optical buffer with up to 750-ns capacity and 50-ns temporal resolution by using an InP integrated 1 X 16 optical phased-array switch and compact FDL module based on thin-cladding highly nonlinear fiber (HNLF). Owing to the high mode confinement inside HNLF, 15 fibers with the total length of 1.2 km are coiled onto a single bobbin with a coin-sized footprint without increasing the propagation loss. At the interface between the InP switch and FDLs, a pitch-converting silica planar-lightwave circuit chip is employed to achieve 16-port simultaneous uniform interconnection. Using the developed module, variable optical buffering experiment is demonstrated, where the packet intervals are expanded from 20 to 70 ns successfully.

    DOI: 10.1109/JLT.2010.2102338

  • In situ curvature monitoring for metal-organic vapor phase epitaxy of strain-balanced stacks of InGaAs/GaAsP multiple quantum wells 査読

    Masakazu Sugiyama, Kenichi Sugita, Yunpeng Wang, Yoshiaki Nakano

    JOURNAL OF CRYSTAL GROWTH   315 ( 1 )   1 - 4   2011年1月 (   ISSN:0022-0248 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:ELSEVIER SCIENCE BV  

    Strain-balanced growth of highly mismatched quantum wells is of crucial importance for obtaining high performance devices such as quantum-well solar cells and quantum cascade lasers. In situ curvature measurement successfully captured strain accumulation in lattice-mismatched InGaAs/GaAsP multiple quantum wells that were grown by metal-organic vapor phase epitaxy. Average strain in the layers was detectable using the slope of curvature versus layer thickness. High-sensitivity measurement made it possible to detect strain accumulation and release within a single layer of InGaAs and GaAsP, respectively, by looking at the see-saw-like oscillation of curvature, which is an indication of successful strain balancing in a period of well/barrier. In situ curvature monitoring makes it easier and more efficient to adjust growth conditions for perfect strain balancing, as compared with conventional repetition of growth and X-ray diffraction measurement. (c) 2010 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jcrysgro.2010.09.070

  • Gas Phase Doping of Arsenic into (100), (110), and (111) Germanium Substrates Using a Metal-Organic Source 査読

    Mitsuru Takenaka, Kiyohito Morii, Masakazu Sugiyama, Yoshiaki Nakano, Shinichi Takagi

    JAPANESE JOURNAL OF APPLIED PHYSICS   50 ( 1 )   2011年1月 (   ISSN:0021-4922 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:JAPAN SOC APPLIED PHYSICS  

    The gas phase doping of arsenic (As) into (100), (110), and (111) germanium (Ge) substrates at 500 to 700 degrees C using a metal-organic vapor phase epitaxy (MOVPE) system with tertiarybutylarsine (TBAs) as the As source was investigated for the n-type source/drain formation of Ge metaloxide-semiconductor field effect transistors (MOSFETs). The surface concentration of As analyzed by secondary ion mass spectroscopy (SIMS) was approximately 1 x 10(19) cm(-3) and the diffusion constant was one order of magnitude smaller than that of As induced by ion implantation at 700 degrees C. The diffusion constant was linearly dependent on the As concentration, and the activation energy and pre-exponential factor of the As diffusion constant were found to be 1.9 eV and 6.2 x 10(-3) cm(2)/s, respectively. The electron carrier concentration profiles were also evaluated by spreading resistance profiling (SRP) to confirm dopant activation. (c) 2011 The Japan Society of Applied Physics

    DOI: 10.1143/JJAP.50.010105

  • High material-efficiency MOVPE of GaAs without degradation of photovoltaic performances 査読

    R. Onitsuka, M. Sugiyama, Y. Nakano

    JOURNAL OF CRYSTAL GROWTH   315 ( 1 )   53 - 56   2011年1月 (   ISSN:0022-0248 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:ELSEVIER SCIENCE BV  

    The upper limit of GaAs growth rate was explored for the metal-organic vapor phase epitaxy (MOVPE) of a GaAs pin photovoltaic cell, in order to increase the throughput and to reduce material wastage during MOVPE. The growth rate of the undoped GaAs (i-layer) alone was increased from 0.55 to 3.3 mu m/h at a constant partial pressure of tertiarybutylarsine (TBAs), and the V/III ratio was reduced from 15 to 2.2 accordingly. The conversion efficiency of the pin cell with a 1-mu m i-GaAs layer was almost independent of growth rate and reached 20%, although too thick an i-layer of 3 mu m led to degraded efficiency. The crystal quality of that i-GaAs layer was investigated with Hall effect measurement and secondary ion mass spectroscopy (SIMS). With increase in growth rate, the hole concentration increased from 1 x 10(16) to 8 x 10(16) cm(-3) due to increased carbon impurity concentration. We have estimated the upper limit of carbon impurity that does not degrade conversion efficiency of a GaAs pin cell with a 1-mu m-thick i-layer: 1 x 10(17) cm(-3), corresponding to a growth rate of 6 mu m/h. (C) 2010 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jcrysgro.2010.09.069

  • Analysis of in situ reflectance spectra and performance of InGaAs/GaAsP quantum-well solar cells: Towards a comprehensive understanding of strain accumulation influence on solar cell properties 査読

    Yunpeng Wang, Yu Wen, Masakazu Sugiyama, Yoshiaki Nakano

    Conference Proceedings - International Conference on Indium Phosphide and Related Materials   2011年 (   ISSN:1092-8669 )

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    掲載種別:研究論文(国際会議プロシーディングス)  

    A strain-balanced InGaAs/GaAsP multiple quantum-wells (MQWs) structure was grown with metal organic vapor phase epitaxy (MOVPE) on GaAs substrate towards enhanced current gain by extending adsortion range. In our previous investigation, it has been verified that growth of such a hetero-structure can be diagnosed by periodical oscillation of transient reflectance spectra: an excess amount of strian accumulation (SA) would derive lattice relaxation in MQWs and degrades surface mophology, resulting in a decay in surface reflectance. In this report, we applied a series of detailed in situ mornitoring of transient reflectance spectra (RS). According to a combined analysis of transient RS in a course of p-i-n MQWs solar cell growth and spectral response measurement, a comprehensive understanding can be offered to explain SA process through the whole p-i-n hetero-layer, and its influnce on solar cell properties. © VDE VERLAG GMBH.

  • CMOS integration of InGaAs nMOSFETs and Ge pMOSFETs with self-align Ni-based metal S/D using direct wafer bonding 査読

    M. Yokoyama, S. H. Kim, R. Zhang, N. Taoka, Y. Urabe, T. Maeda, H. Takagi, T. Yasuda, H. Yamada, O. Ichikawa, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka, S. Takagi

    Digest of Technical Papers - Symposium on VLSI Technology   60 - 61   2011年 (   ISSN:0743-1562 )

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    掲載種別:研究論文(国際会議プロシーディングス)  

    We have successfully demonstrated the CMOS integration of InGaAs nMOSFETs and Ge pMOSFETs with self-align Ni-InGaAs and Ni-Ge metal source/drain (S/D) on a Ge substrate, by using direct wafer bonding (DWB), for the first time. Ni-based metal S/D allows us to fabricate high performance nMOSFETs and pMOSFETs simultaneously at the single-step S/D formation process. The fabricated InGaAs nMOSFET and Ge pMOSFET have exhibited the high electron and hole mobilities of 1800 and 260 cm2/Vs and the mobility enhancement against Si of 3.5x and 2.3x, respectively. © 2011 JSAP (Japan Society of Applied Physi.

  • ALD Al <inf>2</inf>O <inf>3</inf> activated direct wafer bonding for 111-V CMOS photonics platform 査読

    Y. Ikku, M. Yokoyama, R. Iida, M. Sugiyama, Y. Nakano, M. Takenaka, S. Takagi

    Conference Proceedings - International Conference on Indium Phosphide and Related Materials   2011年 (   ISSN:1092-8669 )

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    掲載種別:研究論文(国際会議プロシーディングス)  

    Atomic layer deposited Al 2O 3 activated direct wafer bonding has been developed to form III-V on Insulator wafer on Si for III-V CMOS photonics. The surface energy of the bonded interface was improved to be 620 mJ/m 2 without any plasma process. The propagation loss of an InGaAsP photonic wire waveguide was also improved to 1.7 dB/rom. © VDE VERLAG GMBH.

  • Electrical pumping febry-perot lasing of 111-V layer on highly doped silicon micro rib by plasma assisted direct bonding 査読

    Linghan Li, Ryo Takigawa, Akio Higo, Eiji Higurashi, Masakazu Sugiyama, Yoshiaki Nakano

    Conference Proceedings - International Conference on Indium Phosphide and Related Materials   2011年 (   ISSN:1092-8669 )

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    掲載種別:研究論文(国際会議プロシーディングス)  

    The plasma assisted direct bonding of an InP-based III-V active layer on highly doped silicon micro rib for producing direct-current-pumped Fabry-Perot lasing is presented. Electrical pumping from silicon micro rib to InGaAsP MQWs to generate Fabry-Perot lasing was successfully demonstrated at a threshold current of 55mA at 12 °C. The semiconductive and optical properties of the heterojunction between silicon micro rib and InGaAsP multiple quantum wells (MQWs) under direct current injection were measured and discussed. © VDE VERLAG GMBH.

  • Foreword. 査読

    Yoshiaki Nakano

    IEICE Transactions   94-C ( 7 )   1143 - 1144   2011年

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    掲載種別:研究論文(学術雑誌)  

    その他リンク: http://dblp.uni-trier.de/db/journals/ieicet/ieicet94c.html#journals/ieicet/Nakano11

  • Effects of GaN thin layer on InGaN at electrolyte-semiconductor interface for the application of photoelectrochemical water splitting 査読

    Katsushi Fujii, Kayo Koike, Mika Atsumi, Takashi Itoh, Takenari Goto, Takafumi Yao, Masakazu Sugiyama, Yoshiaki Nakano

    Materials Research Society Symposium Proceedings   1387   16 - 21   2011年 (   ISSN:0272-9172 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    Photoelectrochemical properties of nitride semiconductors are paid attention due to their possibilities of water splitting by visible light absorption. However, the photocurrent density of InxGa 1-xN, which absorbs visible light, is usually lower than that of GaN, which has larger band-gap and absorbing only UV light. The reasons of this are thought to be the band-edge position at the semiconductor-electrolyte interface and the crystal quality. The conduction band-edge decreases with increasing of indium composition and across the hydrogen generation energy at around the indium composition of 0.2. This means that the hydrogen generation ability decreases with increasing of indium composition. Low crystal quality is obtained because the lower growth temperature of InxGa1-xN than that of GaN to achieve the indium incorporation. In order to improve the photocurrent density, band-edge energy control and quantum tunneling effect are tried using the structure of thin GaN layer on InxGa1-xN here. The effect for the photocurrent densities is also discussed. © 2012 Materials Research Society.

    DOI: 10.1557/opl.2012.769

  • Effects of quantum wells position and background doping on the performance of multiple quantum well solar cells 査読

    Hiromasa Fujii, Yunpeng Wang, Yoshiaki Nakano, Masakazu Sugiyama

    Conference Record of the IEEE Photovoltaic Specialists Conference   002609 - 002611   2011年 (   ISSN:0160-8371 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    Effects of multiple quantum well (MQW) position and p-type background doping in InGaAs / GaAsP MQW solar cells have been investigated using a semiconductor device simulator, APSYS, focusing on short circuit current I sc. With a high p-type background doping, degradation of I sc as MQW approaches p-region occurs due to recombination in the p-region. Carriers generated in the n-region are found out to be less sensitive to background doping than those in the p-region. Background doping also has indesired influences on carrier escape from wells, a critical issue for design of quantum well solar cells. © 2011 IEEE.

    DOI: 10.1109/PVSC.2011.6186482

  • Fabrication of graded refractive index 3-dimensional anti-reflection structure using self-assembled SiO 2 nano particles 査読

    Kentaroh Watanabe, Yasushi Hamamoto, Akio Higo, Masakazu Sugiyama, Yoshiaki Nakano

    Conference Record of the IEEE Photovoltaic Specialists Conference   000575 - 000578   2011年 (   ISSN:0160-8371 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    A new fabrication method for graded refractive index anti-reflection structure was proposed. Using self-assembled nano-scale silica particles as an etching mask on the first dielectric layer, an arrayed conic-shaped structure was fabricated. Deposition of second material on that textured dielectric film completed the dual-layer anti-reflection structure. We applied ZnS as the first layer and SiO 2 as the second layer. This fabricated 3-dimensional anti-reflection structure (ARS) demonstrated lower averaged reflectivity than a conventional planar dual-layer anti-reflection coating, the thickness of which had been optimized for a GaAs single-junction PV. The averaged reflectance on the fabricated ARS was 2.58% in the wavelength of 350-850nm demonstrated on the Si substrate. Finally, the ARS was applied to a GaAs single-junction PV, leading to enhanced external quantum efficiency (EQE) which is consistent with the reflectance spectrum. © 2011 IEEE.

    DOI: 10.1109/PVSC.2011.6186020

  • Evidence for enhanced carrier escape from multiple stepped quantum well (MSQW) and its impact on photovoltaic performance 査読

    Yu Wen, Yunpeng Wang, Masakazu Sugiyama, Yoshiaki Nakano

    Conference Proceedings - International Conference on Indium Phosphide and Related Materials   2011年 (   ISSN:1092-8669 )

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    掲載種別:研究論文(国際会議プロシーディングス)  

    A multiple stepped quantum wells (MSQWs) solar cell, in which GaAs stepped-potential layers are sandwiched between strain-balanced InGaAs wells and GaAsP barriers, has been proposed. The bias-dependent photoluminescence has been studied to estimate the radiative recombination velocity, in comparison between the MSQW and the normal multiple quantum well (MQW) structures. Thermalized energy distribution from the wells was examined in terms of temperaturedependent PL and higher average carrier temperature was observed for MSQWs than for MQWs. Such enhanced carrier escape in the case of MSQWs allowed us to obtain increased short-circuit current density 25 mA/cm 2 which is approximately 14% higher than that of a normal MQWs solar cell. © VDE VERLAG GMBH.

  • Optically clocked flip-flop operation based on coupled DBR laser diode 査読

    Masaru Zaitsu, Akio Higo, Takuo Tanemura, Yoshiaki Nakano

    16th Opto-Electronics and Communications Conference, OECC 2011   291 - 292   2011年

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    掲載種別:研究論文(国際会議プロシーディングス)  

    Optically clocked all-optical flip-flop based on coupled DBR laser diode is proposed and demonstrated numerically. The device features simple and compact structure and enables synchronized flip-flop operation without asynchronous waveform distortion. © 2011 National Sun Yat-Sen Univ.

  • Silicon/III-V material active layer heterointegrated vertical PIN waveguide photodiode by direct bonding 査読

    Linghan Li, Akio Higo, Ryo Takigawa, Eiji Higurashi, Masakazu Sugiyama, Yoshiaki Nakano

    2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11   2502 - 2505   2011年

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    掲載種別:研究論文(国際会議プロシーディングス)  

    A silicon/III-V material active layer heterointegrated vertical PIN waveguide photodiode was developed and realized by silicon MEMS process and plasma assisted direct bonding. The InGaAsP Multiple Quantum Well (MQW) was integrated onto a SOI platform with highly doped micro rib by O2/Ar plasma assisted bonding which greatly improves the electrical property between the heterointerface. The photon-electron conversion of the photodiode was successfully demonstrated. The waveguide photodiode shows around 50% quantum efficiency at 1550nm and TE polarization. © 2011 IEEE.

    DOI: 10.1109/TRANSDUCERS.2011.5969752

  • Structural evaluation of InGaAs/GaAsP multiple quantum wells via in-situ wafer's curvature measurement and ex-situ X-ray diffraction 査読

    H. Sodabanlu, S. J. Ma, K. Watanabe, M. Sugiyama, Y. Nakano

    Conference Proceedings - International Conference on Indium Phosphide and Related Materials   2011年 (   ISSN:1092-8669 )

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    掲載種別:研究論文(国際会議プロシーディングス)  

    We have developed the calculation technique using wafer's curvature and X-ray diffraction (XRD) pattern to analyze the structure of InGaAs/GaAsP multiple quantum wells (MQWs) grown by metalorganic vapor phase epitaxy (MOVPE). Instead of using difficult and time consuming XRD reciprocal space mapping (RSM), the curvature can effectively supplement the uncertain information of MQWs obtained from XRD 2θ-ωscan. We have proposed an alternative method to determine the physical parameters of MQWs structure. © VDE VERLAG GMBH.

  • Transmission Color Control by Stacked Wire-Grid Polarizers with In-plane Rotation 査読

    Akio Higo, Taelim Lee, Satoshi Maruyama, Hiroyuki Fujita, Yoshiaki Nakano, Hiroshi Toshiyoshi

    OMN2011: 16TH INTERNATIONAL CONFERENCE ON OPTICAL MEMS AND NANOPHOTONICS   209 - 210   2011年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    We present a new method of tuning transmission colors in the visible wavelength range through a stacked pair of sub-wavelength wire-grid polarizers made of EB-patterned 100-nm thick aluminum on glass substrate.

  • Transmissive color shift through layered sub-wavelength gratings based on plasmon enhanced coupling 査読

    T. Lee, A. Higo, H. Fujita, Y. Nakano, H. Toshiyoshi

    2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11   1542 - 1545   2011年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    This paper presents a new principle of color changing pixel by controlling the boundary condition for the surface plasmon polariton resonance on a metallic micro/nano mechanical device. A nanometric wire-grid polarizer was developed by the electron-beam patterning of 100 nm thick aluminum on glass
    a pair of such polarizers was stacked with a sub-micron gap, and the separation or the in-plane rotation alignment angle was mechanically controlled to tune the coloration of the transmission light in the visible wavelength range. FDTD simulation indicated that the polarization-dependent spectrum had an effect to choose the transmitting peak wavelengths from the white backlight. © 2011 IEEE.

    DOI: 10.1109/TRANSDUCERS.2011.5969733

  • Ultralow-dark-current Ge photodetector with GeO2 passivation and gas-phase doped junction 査読

    M. Takenaka, K. Morii, M. Sugiyama, Y. Nakano, S. Takagi

    IEEE International Conference on Group IV Photonics GFP   36 - 38   2011年 (   ISSN:1949-2081 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    Dark current reduction of Ge photodetectors has been investigated by GeO2 passivation and gas-phase doped junction. Ultralow junction and surface leakages indicate the dark current of &lt
    1 nA is achievable in the waveguide geometry. © 2011 IEEE.

    DOI: 10.1109/GROUP4.2011.6053707

  • Nonreciprocal Polarization Conversion in Asymmetric Magnetooptic Waveguide 査読

    Tomohiro Amemiya, Kenji Abe, Takuo Tanemura, Tetsuya Mizumoto, Yoshiaki Nakano

    IEEE JOURNAL OF QUANTUM ELECTRONICS   46 ( 11 )   1662 - 1669   2010年11月 (   ISSN:0018-9197 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC  

    A nonreciprocal polarization converter compatible with InP photonic integrated circuits is demonstrated. The device consists of an asymmetric InGaAsP waveguide combined with a ferrimagnetic Ce:YIG layer. It makes use of the direction dependence of the propagation of light in the waveguide. A trial device was made using orientation-dependent etching of InGaAsP and wafer-bonding of YIG to InGaAsP. It showed a nonreciprocal TE-TM conversion efficiency of 38% at 1.55 mu m wavelength.

    DOI: 10.1109/JQE.2010.2058093

  • All-Optical 2R Regeneration Using the Hysteresis in a Distributed Feedback Laser Diode 査読

    Koen Huybrechts, Takuo Tanemura, Koji Takeda, Yoshiaki Nakano, Roel Baets, Geert Morthier

    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS   16 ( 5 )   1434 - 1440   2010年9月 (   ISSN:1077-260X )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC  

    A broadband optical 2R regenerator based on a single distributed feedback laser is demonstrated for nonreturn to zero signals at a bitrate of 10 Gb/s. A semi-analytical approach for the influence of hysteresis on the transfer function of a 2R regenerator is shown.

    DOI: 10.1109/JSTQE.2009.2037022

  • 160-Gb/s Optical Packet Switching Subsystem With a Monolithic Optical Phased-Array Switch 査読

    Ibrahim Murat Soganci, Nicola Calabretta, Takuo Tanemura, Wenrui Wang, Oded Raz, Kazuhide Higuchi, Kevin A. Williams, Tjibbe de Vries, Harmen Joseph Sebastian Dorren, Yoshiaki Nakano

    IEEE PHOTONICS TECHNOLOGY LETTERS   22 ( 11 )   817 - 819   2010年6月 (   ISSN:1041-1135 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC  

    1 x 8 and 1 x 16 optical packet switching (OPS) node subsystems are demonstrated. The OPS node consists of a 1 x N monolithically integrated InP optical phased-array switch, an electronic switch controller, and a label extractor/eraser that utilizes cascaded reflective fiber Bragg gratings. In-band parallel labels are employed to encode the address information. 160-Gb/s optical time-domain-multiplexed packets are dynamically switched to 8 and 16 outputs with power penalties of 0.5 and 0.7 dB, respectively.

    DOI: 10.1109/LPT.2010.2046161

  • III-V-semiconductor-on-insulator n-channel metal-insulator-semiconductor field-effect transistors with buried Al2O3 layers and sulfur passivation: Reduction in carrier scattering at the bottom interface 査読

    Yokoyama Masafumi, Yasuda Tetsuji, Takagi Hideki, Miyata Noriyuki, Urabe Yuji, Ishii Hiroyuki, Yamada Hisashi, Fukuhara Noboru, Hata Masahiko, Sugiyama Masakazu, Nakano Yoshiaki, Takenaka Mitsuru, Takagi Shinichi

    APPLIED PHYSICS LETTERS   96 ( 14 )   2010年4月 (   ISSN:0003-6951 )

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    掲載種別:研究論文(学術雑誌)  

    DOI: 10.1063/1.3374447

    その他リンク: http://orcid.org/0000-0003-0964-2694

  • High material efficiency MOVPE growth with in situ monitoring 査読

    R. Onitsuka, M. Sugiyama, Y. Nakano

    Journal of Crystal Growth   312 ( 8 )   1343 - 1347   2010年4月 (   ISSN:0022-0248 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    The possibility of growing a GaAs single-junction solar cell structure with high growth rate and low partial pressure of tertiary-butylarsine (TBAs) has been explored in order to minimize the cost and material consumption in metal-organic vapor phase epitaxy (MOVPE). In situ surface reflectance anisotropy measurements suggested that we can grow reasonable quality GaAs layers at a growth rate of 3.3 μm/h and a V/III ratio of 2.5. Dark current-voltage characteristics of the pn junction that was grown at this condition yielded an ideality factor of 1.3, which was equivalent to the value obtained with a lower growth rate and higher V/III ratio, suggesting a possibility that we can grow GaAs with reasonable crystal quality at a high material efficiency. However, there seemed to exist spots of accumulated defects with a spacing of hundreds of micrometers at such a growth condition with a high material efficiency. If they are situated in the vicinity of the pn junction, the efficiency of the PV cell was significantly degraded, which suggests the necessity of tuning the growth conditions according to the impact of a layer on the electrical properties of a PV cell. © 2009 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jcrysgro.2009.11.066

  • In situ reflectance monitoring for the MOVPE of strain-balanced InGaAs/GaAsP quantum-wells 査読

    Yunpeng Wang, Ryusuke Onitsuka, Momoko Deura, Wen Yu, Masakazu Sugiyama, Yoshiaki Nakano

    JOURNAL OF CRYSTAL GROWTH   312 ( 8 )   1364 - 1369   2010年4月 (   ISSN:0022-0248 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:ELSEVIER SCIENCE BV  

    A strain-balanced InGaAs/GaAsP multiple quantum-wells (MQWs) structure was grown by metal organic vapor phase epitaxy (MOVPE) on GaAs substrate, aiming at a middle cell that improves current matching in a tandem solar cell. In order to detect the instant of strain relaxation in the course of MOVPE, which deteriorates crystal quality significantly, we employed in situ optical surface reflectivity measurement. When strain balancing was incomplete, surface reflectivity dropped during the growth of MQWs, indicating lattice relaxation. Such drop in surface reflectivity occurred at a smaller number of stacked quantum wells when the absolute value of an average strain per well/barrier pair was larger. The accumulated strain, i.e., the product between the average strain and the total thickness at the moment of reflectivity dropped, was roughly constant for all the MQWs, indicating a possibility that we can use this value as the measure to predict the maximum number of MQWs for a given value of the average strain. The reflectance anisotropy (RA) was also monitored in the course of the growth. The value of RA showed linear periodic behavior before the lattice relaxation, corresponding to the well/barrier stacks, suggesting that anisotropy of surface atoms reflects accumulated strain of the growth surface. (C) 2009 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jcrysgro.2009.11.063

  • Monolithically Integrated InP 1 x 16 Optical Switch With Wavelength-Insensitive Operation 査読

    Ibrahim Murat Soganci, Takuo Tanemura, Kevin A. Williams, Nicola Calabretta, Tjibbe de Vries, E. Smalbrugge, Meint K. Smit, Harm J. S. Dorren, Yoshiaki Nakano

    IEEE PHOTONICS TECHNOLOGY LETTERS   22 ( 3 )   143 - 145   2010年2月 (   ISSN:1041-1135 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC  

    The static and dynamic characteristics of a monolithically integrated InP 1 x 16 optical phased-array switch are presented. The device demonstrates static switching with an average extinction ratio of 18.6 dB, on-chip loss below 7 dB, and wavelength dependence of less than 0.8 dB in the entire C-band. A 40-Gb/s nonreturn-to-zero signal is transmitted through the switch with a power penalty below 0.4 dB. Using a programmable electronic circuit, dynamic switching to all 16 outputs is achieved with response times less than 11 ns.

    DOI: 10.1109/LPT.2009.2036859

  • All-optical flip-flop with optical clock signal using mach-zehnder interferometer bistable laser diode 査読

    Masaru Zaitsu, Koji Takeda, Mitsuru Takenaka, Takuo Tanemura, Yoshiaki Nakano

    Optics InfoBase Conference Papers   2010年 (     eISSN:2162-2701 )

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    掲載種別:研究論文(国際会議プロシーディングス)  

    We perform and demonstrate synchronous all-optical flip-flop operations with optical clock injection using Mach-Zehnder interferometer bistable laser diode. Saturable absorbers play the key role which allow broadband wavelength tuning of the clock wavelength. © OSA/IPR/PS 2010.

  • A mixed-signal analysis for tilted MEMS torsion mirror devices 査読

    Satoshi Maruyama, Akio Higo, M. Nakada, K. Takahashi, T. Takahashi, M. Mita, Hiroyuki Fujita, Yoshiaki Nakano, Hiroshi Toshiyoshi

    2010 International Conference on Optical MEMS and Nanophotonics, Optical MEMS and Nanophotonics 2010   109 - 110   2010年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    We have already proposed a simulation model for a 90-deg-tilted MEMS mirror, but in some reasons, numerical simulation methods for several angle counter electrode devices are not established. In order to solve these problems, we propose a cascade drive voltage signal technique and demonstrate a 51.5 deg tilted angle counter electrode and assure the effectiveness of the equivalence circuit. ©2010 IEEE.

    DOI: 10.1109/OMEMS.2010.5672161

  • Demonstration of Hybrid Optical Ring Network Combining Multi-Wavelength OPS and OCS 査読

    Hui Li, Hideaki Imaizumi, Takuo Tanemura, Yoshiaki Nakano, Hiroyuki Morikawa

    2010 CONFERENCE ON OPTICAL FIBER COMMUNICATION OFC COLLOCATED NATIONAL FIBER OPTIC ENGINEERS CONFERENCE OFC-NFOEC   2010年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    We design a hybrid optical add/drop node combining Multi-Wavelength Optical Packet and Optical Switching for Metro-Area Ring Networks. The feasibility of hybrid switching has been confirmed at a 120 Gb/s network testbed.

  • 1x16 optical packet switch sub-system with a monolithically integrated InP optical switch 査読

    N. Calabretta, I. M. Soganci, T. Tanemura, W. Wang, O. Raz, K. Higuchi, K. A. Williams, T. J. de Vries, Y. Nakano, H. J. S. Dorren

    2010 CONFERENCE ON OPTICAL FIBER COMMUNICATION OFC COLLOCATED NATIONAL FIBER OPTIC ENGINEERS CONFERENCE OFC-NFOEC   2010年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    We demonstrate a 1x16 optical packet switch sub-system for 160 Gbps RZ-OOK and 12 x 10 Gbps multi-wavelength DPSK packets. We show error-free operation with maximum penalties of 0.7 dB for 160 Gbps RZ-OOK and 0.6 dB for multi-wavelength DPSK packets. (c) 2010 Optical Society of America

  • A bulk micromachined vertical nano-gap Pirani wide-range pressure test structure for packaged MEMS performance monitoring 査読

    Masanori Kubota, Toshihiro Okada, Yoshio Mita, Masakazu Sugiyama, Yoshiaki Nakano

    IEEE International Conference on Microelectronic Test Structures   14 - 17   2010年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    A nano-gap Pirani gauge for integration with bulk MEMS sensors and actuators was fabricated by cutting-edge high aspect ratio bulk micromachining. The 150nm-wide, 5000nm-dep vertical trench enables wide-range pressure measurement
    the device showed sensitity in all the tested range from 6.3 to 101.3kPa. ±0.27% of power variation around 35 mW was measured for ±1 kPa of pressure change from atmospheric pressure. ©2010 IEEE.

    DOI: 10.1109/ICMTS.2010.5466871

  • ELECTRICAL PUMPING TO III-V LAYER FROM HIGHLY DOPED SILICON MICRO WIRE TO REALIZE LIGHT EMISSION BY PLASMA-ASSISTED BONDING TECHNOLOGY 査読

    Ling-Han Li, Ryo Takigawa, Akio Higo, Eiji Higurashi, Masakazu Sugiyama, Yoshiaki Nakano

    2010 22ND INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM)   2010年 (   ISSN:1092-8669 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    The direct current pumping from highly doped silicon microwire to InP-based III-V active layer for spontaneous light emission was realized by air ambient plasma-assisted direct bonding. The semi-conductive properties of the hetero-integration and the effects of plasma-assisted bonding process on InGaAsP multiple quantum well (MQW) were measured and discussed. The electrical pumping from silicon microwire to InGaAsP MQW material for spontaneous light emission was successfully demonstrated afterwards.

  • Development of Photonic Switching Node Prototypes for Transparent Networks 査読

    Yoshiaki Nakano, Takuo Tanemura, Hideaki Imaizumi, Hiroyuki Morikawa

    2010 CONFERENCE ON OPTICAL FIBER COMMUNICATION OFC COLLOCATED NATIONAL FIBER OPTIC ENGINEERS CONFERENCE OFC-NFOEC   2010年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    Using newly developed PLZT-based OBS core node, low-loss Ether-frame transmission with application-layer connectivity is demonstrated over 92-km 2-hop field testbed. Recent progresses in developing OPS/OCS hybrid router are also reviewed. (c) 2010 Optical Society of America

  • Extremely-thin-body InGaAs-On-Insulator MOSFETs on Si fabricated by direct wafer bonding 査読

    M. Yokoyama, R. Iida, S. H. Kim, N. Taoka, Y. Urabe, T. Yasuda, H. Takagi, H. Yamada, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka, S. Takagi

    Technical Digest - International Electron Devices Meeting, IEDM   3.1.4   2010年 (   ISSN:0163-1918 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    We have demonstrated extremely-thin-body (ETB) (3.5 and 9 nm) InGaAs-on-insulator (InGaAs-OI) MOSFETs on Si substrates with Al 2O3 ultrathin buried oxide (UTBOX) layers fabricated by direct wafer bonding (DWB). We have found that the ETB highly-doped InGaAs-OI n-channel MOSFETs without p-n junction can perform a normal MOSFET operation under front- and back-gate configuration and the double-gate operation can provide excellent on-current/off-current (Ion/Ioff) properties of ∼107 and the improved S factor even for InGaAs-OI MOSFETs with ND of 1×1019 cm-3. ©2010 IEEE.

    DOI: 10.1109/IEDM.2010.5703286

  • High Mobility III-V-On-Insulator MOSFETs on Si with ALD-Al2O3 BOX layers 査読

    Yokoyama M, Urabe Y, Yasuda T, Takagi H, Ishii H, Miyata N, Yamada H, Fukuhara N, Hata M, Sugiyama M, Nakano Y, Takenaka M, Takagi S, Ieee

    2010 Symposium on Vlsi Technology, Digest of Technical Papers   235 - +   2010年

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    掲載種別:研究論文(学術雑誌)  

    DOI: 10.1109/vlsit.2010.5556241

  • High quality thin body III-V-on-insulator channel layer transfer on Si wafer using direct wafer bonding 査読

    Yokoyama M, Yasuda T, Takagi H, Yamada H, Urabe Y, Fukuhara N, Hata M, Sugiyama M, Nakano Y, Takenaka M, Takagi S

    Semiconductor Wafer Bonding 11: Science, Technology, and Applications - in Honor of Ulrich Gosele   33   391 - 401   2010年

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    掲載種別:研究論文(学術雑誌)  

    DOI: 10.1149/1.3483529

  • HOW SHALL WE PUT MULTIPLE QUANTUM WELLS IN P-I-N STRUCTURE FOR EFFICIENCY ENHANCEMENT? 査読

    Masakazu Sugiyama, Yunpeng Wang, Soohyeck Choi, Yu Wen, Yoshiaki Nakano

    35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE   2010年 (   ISSN:0160-8371 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    For the purpose of getting maximum short-circuit current for a InGaAs/GsAsP strain-compensated multiple-quantum-well (MQW) solar cell with a minimum drop in both open-circuit voltage and fill factor, we have optimized the position of the quantum wells in the i-region of a pin host structure. Numerical and experimental analysis revealed the best position, where the MQWs divide the i-region at a ratio of 1:3 for p-side and n-side, respectively. The physics behind this finding is that (1) MQWs should not touch the edge of either p- or n-region in order to avoid accumulation of majority carrier that deteriorates carrier transport at a short-circuit condition, and (2) MQWs should not be around the center of the i-region to avoid carrier recombination at a larger forward bias condition.

  • III-V-SEMICONDUCTOR-ON-INSULATOR MISFETs ON Si WITH BURIED SiO2 AND Al2O3 LAYERs BY DIRECT WAFER BONDING 査読

    Yokoyama Masafumi, Yasuda Tetsuji, Takagi Hideki, Urabe Yuji, Ishii Hiroyuki, Miyata Noriyuki, Yamada Hisashi, Fukuhara Noboru, Hata Masahiko, Sugiyama Masakazu, Nakano Yoshiaki, Takenaka Mitsuru, Takagi Shinichi, IEEE

    2010 22ND INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM)   2010年 (   ISSN:1092-8669 )

     詳細

    掲載種別:研究論文(学術雑誌)  

  • InGaAs/GaAsP strain-compensated superlattice solar cell for enhanced spectral response 査読

    Yunpeng Wang, Yu Wen, Masakazu Sugiyama, Yoshiaki Nakano

    35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE   3383 - 3385   2010年 (   ISSN:0160-8371 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    A superlattice solar cell with InGaAs well and GaAsP barrier was realized for the first time. Increase in short-circuit current by 2 mA/cm(2) was achieved with 60 stacks of the 3.7-nm-thick wells as compared with a GaAs p-i-n reference cell. No degradation of spectral response for the wavelength range of GaAs absorption suggested efficient carrier transport across the wells due to tunneling through the thin barriers. A breakthrough for this achievement was strain management with monolayer-thin GaAs layer at the InGaAs/GaAsP interface, where huge lattice mismatch seems to have induced localized defects and have functioned as recombination centers.

  • Low-power colorless all-optical 2R regeneration of 25 Gb/s NRZ signals using a standard DFB laser 査読

    K. Huybrechts, C. Peucheret, J. Seoane, T. Tanemura, K. Takeda, Y. Nakano, R. Baets, G. Morthier

    Optics InfoBase Conference Papers   2010年 (     eISSN:2162-2701 )

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    掲載種別:研究論文(国際会議プロシーディングス)  

    We demonstrate the first all-optical 2R regeneration of 25 Gbit/s NRZ data based on hysteresis in a DFB laser. The scheme results in BER improvement, exhibits low power consumption and is effective after fiber transmission. © 2010 Optical society of America.

  • Monolithically Integrated Phased-Array Switch for Optical Packet Switching and Interconnection 査読

    Yoshiaki Nakano, Takuo Tanemura, Ibrahim Murat Soganci

    2010 CONFERENCE ON OPTICAL FIBER COMMUNICATION OFC COLLOCATED NATIONAL FIBER OPTIC ENGINEERS CONFERENCE OFC-NFOEC   2010年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    Novel type of wavelength-insensitive monolithically integrated InP 1xN switch is developed using optical phased-array architecture. Low-polarization-dependent 1x8 switch, 1x16 switch, and application to 320-Gbps WDM optical packet switching are demonstrated. (C) 2010 Optical Society of America

  • InP integrated photonic circuits for optical packet switching and digital photonics 査読

    Yoshiaki Nakano, Takuo Tanemura, Akio Higo

    2010 Asia Communications and Photonics Conference and Exhibition, ACP 2010   417 - 418   2010年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    Semiconductor integrated photonic devices and circuits on InP for high-speed and large scale optical switching, optical buffer memories, and for digital photonic processing are reviewed, as well as PLC-based optical lead frames for multi-port coupling. ©2010 IEEE.

    DOI: 10.1109/ACP.2010.5682493

  • Large-Scale High-Speed Photonic Switching Circuit Monolithically Integrated on InP 査読

    Takuo Tanemura, Ibrahim Murat Soganci, Yoshiaki Nakano

    2010 15TH OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC)   832 - 833   2010年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEICE-INST ELECTRONICS INFORMATION & COMMUNICATION ENGINEERS  

    Broadband and high-speed monolithically integrated InP 1x16 switches are developed using optical phased-array structure. Application to 160-Gbps packet switching and large-capacity variable optical buffering are demonstrated.

  • Monolithic InP 100-Port Photonic Switch 査読

    Ibrahim Murat Soganci, Takuo Tanemura, Koji Takeda, Masaru Zaitsu, Mitsuru Takenaka, Yoshiaki Nakano

    2010 36TH EUROPEAN CONFERENCE AND EXHIBITION ON OPTICAL COMMUNICATION (ECOC), VOLS 1 AND 2   2010年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    A photonic integrated circuit capable of 1x100 switching is reported. The switch, incorporating more than 250 photonic components along with numerous passive waveguides and bends, demonstrates power penalty &lt; 1 dB at 10 Gbps and extinction ratio &gt; 50 dB.

  • Optical Buffer Based on Monolithic InP Phased-Array 1x16 Switch with Silica-PLC Pitch Converter and Ultra-Compact Coiled Fiber Delay Lines 査読

    T. Tanemura, I. M. Soganci, T. Oyama, T. Ohyama, S. Mino, K. A. Williams, N. Calabretta, H. J. S. Dorren, Y. Nakano

    2010 CONFERENCE ON OPTICAL FIBER COMMUNICATION OFC COLLOCATED NATIONAL FIBER OPTIC ENGINEERS CONFERENCE OFC-NFOEC   2010年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    We demonstrate large-capacity high-resolution optical buffer, comprising 1x16 InP switch and ultra-compact delay lines based on thin-cladding highly nonlinear fibers. Silica-PLC-based pitch converter is employed to realize uniform coupling from all 16 switch ports simultaneously. (C) 2010 Optical Society of America

  • Optical packet switch sub-system with label processing and monolithically integrated InP optical switch 査読

    N. Calabretta, I. M. Soganci, T. Tanemura, W. Wang, O. Raz, K. Higuchi, K. A. Williams, T. J. de Vries, Y. Nakano, H. J. S. Dorren

    2010 IEEE PHOTONICS SOCIETY WINTER TOPICALS MEETING SERIES   107 - +   2010年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    We demonstrate a 1x16 optical packet switch sub-system for 160 Gbps RZ-OOK and 12 x 10 Gbps multi-wavelength DPSK packets. We show error-free operation with maximum penalties of 0.7 dB for 160 Gbps RZ-OOK and 0.6 dB for multi-wavelength DPSK packets.

  • Semiconductor photonic integrated switches and buffers for optical packet routing 査読

    Takuo Tanemura, Ibrahim Murat Soganci, Yoshiaki Nakano

    Digest of the 9th International Conference on Optical Internet, COIN 2010   2010年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    Monolithically integrated InP 1×16 switch with broadband and low-noise operation is developed by using optical phased-array scheme. Potential applications to 160-Gbps packet switching and large-capacity variable optical buffering are demonstrated successfully.

    DOI: 10.1109/COIN.2010.5546470

  • TM MODE WAVEGUIDE ISOLATOR MONOLITHICALLY INTEGRATED WITH InP ACTIVE DEVICES 査読

    Gengo Takahashi, Tomohiro Amemiya, Takuo Tanemura, Akio Higo, Koji Takeda, Yoshiaki Nakano

    2010 22ND INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM)   2010年 (   ISSN:1092-8669 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    We propose and experimentally demonstrate a novel structure for monolithically integrating a TM-mode waveguide optical isolator with active InP devices. A semiconductor ring laser with integrated isolator is fabricated and demonstrated for the first time.

  • SELF-ASSEMBLED SiO2 PARTICLE COATING ON 2 LAYER ANTI-REFLECTION FILMS FOR EFFICIENCY ENHANCEMENT OF GaAs PV CELLS 査読

    Kentaroh Watanabe, Akio Higo, Masakazu Sugiyama, Yoshiaki Nakano

    35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE   2010年 (   ISSN:0160-8371 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    An anti-reflection coating (ARC) with sub-micrometer size of structure has brought significant advantage in solar cell efficiency. Owing to the diffraction and light trapping effect caused by a sub-wavelength size of structure, the reduced reflectance covering a wide-wavelength can be expected at a surface of the photovoltaic (PV) cell. We proposed and tried a nano-scale structure fabrication by small-size particles combined with conventional 2 layers ARC on GaAs PV cells. The small-size spherical particles show well aligned self-assembly on the substrate when the solution containing micro-spheres were dried with a proper sheer force. Using the pure water solution of colloidal SiO2 spheres and an ordinal spin-coating technique, a well aligned mono-particle layer has been fabricated on the 2 layer ARC (TiO2 and SiO2) on a GaAs PV cell. In this research, we tried 3 samples with different size of particles (400 nm, 200 nm and 100 nm in diameter).
    As the evaluation of PV cell, I-V characteristics under the AM1.5G illumination and external quantum efficiency (EQE) spectra were measured. For each sample, the I-V and EQE were obtained from the same sample: before and after application of particle coating. Measured relative efficiency enhancement of the additional mono-layer coating was +7.1, +5.7 and -0.3 in % for particle sizes of 100, 200 and 400 nm, respectively. As well as enhancement in light incorporation to the inside of a PV cell, there seem to be scattering loss by the particles on the cell. In the range of tested particle size, the smaller particle was preferable to avoid scattering loss and provides a larger efficiency enhancement to GaAs PV cells.

  • Strain-compensated multiple stepped quantum wells (SC-MSQWs) cell for enhanced spectral response and carrier transport 査読

    Yu Wen, Yunpeng Wang, Masakazu Sugiyama, Yoshiaki Nakano

    Conference Record of the IEEE Photovoltaic Specialists Conference   385 - 388   2010年 (   ISSN:0160-8371 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    In order to develop a high quality material which is both lattice-matched to GaAs and with extended absorption edge below 1000 nm for improved efficiency of III-V tandem solar cells, we have introduced In0.16Ga 0.84As/GaAs/GaAs0.79P0.21 strain-compensated multiple stepped quantum wells (SC-MSOWs) solar cell. To maximize the contribution of quantum well to spectral response, we inserted a GaAs step layer between the well and the barrier, leading to stronger photo-absorption of the wells and enhanced carrier transport in the stacked wells. Combined with strain compensation between highly-strained wells and barriers, the SC-MSOWs allow us sufficient number of quantum-well stacks to obtain significant spectral response below the bandgap of GaAs. A short circuit current density 25 mA/cm2 was obtained under AM1.5G illumination, which is approximately 14% higher than that of a conventional MOWs solar cell. © 2010 IEEE.

    DOI: 10.1109/PVSC.2010.5616839

  • Ultra-high efficiency solar cell development activity in "SOLAR QUEST", the international research center for global energy and environmental technologies 査読

    Yoshiaki Nakano

    2010 International Conference on Optical MEMS and Nanophotonics, Optical MEMS and Nanophotonics 2010   1 - 2   2010年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    DOI: 10.1109/OMEMS.2010.5672215

  • Ultrasmall Arrayed Waveguide Grating Multiplexer using InP-based Photonic Wire Waveguide on Si wafer for III-V CMOS photonics 査読

    Mitsuru Takenaka, Masafumi Yokoyama, Masakazu Sugiyama, Yoshiaki Nakano, Shinichi Takagi

    2010 CONFERENCE ON OPTICAL FIBER COMMUNICATION OFC COLLOCATED NATIONAL FIBER OPTIC ENGINEERS CONFERENCE OFC-NFOEC   2010年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    Extremely compact low-loss 4 channel arrayed waveguide grating with 147x92 mu m(2) device size was demonstrated using ultrahigh index contrast InGaAsP photonic wire waveguides on Si, compatible for the monolithic integration of high-performance III-V CMOS transistors. (C) 2010 Optical Society of America

  • Single-Chip All-Optical Packet Processor Based on All-Optical Flip-Flop Monolithically Integrated with MZI-SOA Switch 査読

    Koji Takeda, Mitsuru Takenaka, Takuo Tanemura, Masaru Zaitsu, Yoshiaki Nakano

    2010 CONFERENCE ON OPTICAL FIBER COMMUNICATION OFC COLLOCATED NATIONAL FIBER OPTIC ENGINEERS CONFERENCE OFC-NFOEC   2010年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    We fabricate and demonstrate all-optical packet switching using a single photonic integrated circuit (PIC), which is constructed from monolithically integrated all-optical flip-flop and switch. Both 10 and 40-Gb/s signal can be transmitted through the PIC. (C) 2010 Optical Society of America

  • Integration of GaN/AlN all-optical switch with SiN/AlN waveguide utilizing spot-size conversion 査読

    Norio Iizuka, Haruhiko Yoshida, Nobuto Managaki, Toshimasa Shimizu, Sodabanlu Hassanet, Chiyasit Cumtornkittikul, Masakazu Sugiyama, Yoshiaki Nakano

    OPTICS EXPRESS   17 ( 25 )   23247 - 23253   2009年12月 (   ISSN:1094-4087 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:OPTICAL SOC AMER  

    Spot-size converters for an all-optical switch utilizing the intersubband transition in GaN/AlN multiple quantum wells are studied with the purpose of reducing operation power by improving the coupling efficiency between the input fiber and the switch. With a stair-like spot-size converter, the absorption saturation of 5 dB is achieved with a pulse energy of 25 pJ. The switch is integrated with a SiN/AlN waveguide and spot-size converters, and the structure provides the possibility of an integration of the switch with other functional devices. To further improve the coupling loss between the waveguide and the switch, triangular-shaped converters are investigated, demonstrating losses as low as 2 dB/facet. (C) 2009 Optical Society of America

    DOI: 10.1364/OE.17.023247

  • InGaAsP Photonic Wire Based Ultrasmall Arrayed Waveguide Grating Multiplexer on Si Wafer 査読

    Takenaka Mitsuru, Yokoyama Masafumi, Sugiyama Masakazu, Nakano Yoshiaki, Takagi Shinichi

    APPLIED PHYSICS EXPRESS   2 ( 12 )   2009年12月 (   ISSN:1882-0778 )

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    掲載種別:研究論文(学術雑誌)  

    DOI: 10.1143/APEX.2.122201

  • MEMS Integrated with Silicon Photonic Wire Waveguides 招待 査読

    A. Higo, H. Toshiyoshi, H. Fujita, Y. Nakano

    Proc. 16th Int. Display Workshop (IDW'09)   2009年12月

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

  • Thin Body III-V-Semiconductor-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors on Si Fabricated Using Direct Wafer Bonding 査読

    Yokoyama Masafumi, Yasuda Tetsuji, Takagi Hideki, Yamada Hisashi, Fukuhara Noboru, Hata Masahiko, Sugiyama Masakazu, Nakano Yoshiaki, Takenaka Mitsuru, Takagi Shinichi

    APPLIED PHYSICS EXPRESS   2 ( 12 )   2009年12月 (   ISSN:1882-0778 )

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    掲載種別:研究論文(学術雑誌)  

    DOI: 10.1143/APEX.2.124501

  • Development of an Optical-Burst Switching Node Testbed and Demonstration of Multibit Rate Optical Burst Forwarding 査読

    Amin Abdullah Al, Nishimura Kohsuke, Shimizu Katsuhiro, Takenaka Mitsuru, Tanemura Takuo, Onaka Hiroshi, Hatta Tatsuo, Kasukawa Akihiko, Tsuji Shinji, Kondo Yuki, Urino Yutaka, Uetsuka Hisato, Nakano Yoshiaki

    JOURNAL OF LIGHTWAVE TECHNOLOGY   27 ( 16 )   3466 - 3475   2009年8月 (   ISSN:0733-8724 )

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    掲載種別:研究論文(学術雑誌)  

    DOI: 10.1109/JLT.2009.2015776

  • Nonreciprocal Polarization Converter Consisting of Asymmetric Waveguide With Magnetooptic Cladding: Theory and Simulation 査読

    Tomohiro Amemiya, Takuo Tanemura, Yoshiaki Nakano

    IEEE JOURNAL OF QUANTUM ELECTRONICS   45 ( 7 )   769 - 776   2009年7月 (   ISSN:0018-9197 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC  

    A nonreciprocal polarization converter compatible with InP-based photonic integrated circuits is proposed. The device consists of an asymmetric InGaAsP waveguide combined with a ferrimagnetic cerium-substituted yttrium iron garnet layer. It makes use of the nonreciprocal conversion of the polarization state in the waveguide. A nonreciprocal TE-TM conversion efficiency of 93% at 1.55 mu m wavelength can be obtained with a device length of 0.27 mm.

    DOI: 10.1109/JQE.2009.2013123

  • A Novel Parylene/Al/Parylene Sandwitch Procetion Mask for HF Vapor Release for Micro Electro Mechanical Systems 査読

    A. Higo, K. Takahashi, H. Fujita, Y. Nakano, H. Toshiyoshi

    Proc. 15th Int. Conf. on Solid-State Sensors, Actuators & Microsystems (Transducers 2009)   196 - 199   2009年6月

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

  • 40-Gb/s All-Optical Packet Switching With a Distributed-Feedback Laser as All-Optical Flip-Flop 査読

    Koen Huybrechts, Takuo Tanemura, Yoshiaki Nakano, Roe Baets, Geert Morthier

    IEEE PHOTONICS TECHNOLOGY LETTERS   21 ( 9-12 )   703 - 705   2009年5月 (   ISSN:1041-1135 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC  

    All-optical flip-flops (AOFFs) have recently received increased attention as elements for all-optical packet-switched networks. In this letter, we use a single off-the-shelf distributed-feedback laser as AOFF to switch 40-Gb/s packets with a guard time as low as 150 ps.

    DOI: 10.1109/LPT.2009.2016671

  • Optical and Structural Characterization of InGaN/GaN Multiple Quantum Wells by Epitaxial Lateral Overgrowth 査読

    Sugiyama Masakazu, Shioda Tomonari, Tomita Yuki, Yamamoto Takahisa, Ikuhara Yuichi, Nakano Yoshiaki

    MATERIALS TRANSACTIONS   50 ( 5 )   1085 - 1090   2009年5月 (   ISSN:1345-9678 )

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    掲載種別:研究論文(学術雑誌)  

    DOI: 10.2320/matertrans.MC200830

  • Wavelength-multiplexed optical packet switching using InP phased-array switch 査読

    Takuo Tanemura, Koji Takeda, Yoshiaki Nakano

    OPTICS EXPRESS   17 ( 11 )   9454 - 9459   2009年5月 (   ISSN:1094-4087 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:OPTICAL SOC AMER  

    A monolithically integrated InP/InGaAsP 1x5 optical phased-array switch is demonstrated for broadband wavelength-division multiplexed (WDM) optical packet switching (OPS) application. Using the wide optical bandwidth of the switch, we achieve error-free forwarding of 320-Gbps (40-Gbps x 8 channel) WDM signal with less than 1.3-dB penalty. Since the switch consists of only phase-modulating section, it is free from nonlinear signal distortion and inter-channel crosstalks, allowing large dynamic range of input power. The application to WDM-OPS testbed is demonstrated successfully, where 320-Gbps WDM payloads are routed synchronously to the optical label. (C) 2009 Optical Society of America

    DOI: 10.1364/OE.17.009454

  • Dislocation-Free InGaAs on Si(111) Using Micro-Channel Selective-Area Metalorganic Vapor Phase Epitaxy 査読

    Deura Momoko, Hoshii Takuya, Yamamoto Takahisa, Ikuhara Yuichi, Takenaka Mitsuru, Takagi Shinichi, Nakano Yoshiaki, Sugiyama Masakazu

    APPLIED PHYSICS EXPRESS   2 ( 1 )   2009年1月 (   ISSN:1882-0778 )

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    掲載種別:研究論文(学術雑誌)  

    DOI: 10.1143/APEX.2.011101

  • Multihop Field Trial of Optical Burst Switching Testbed With PLZT Optical Matrix Switch 査読

    Takuo Tanemura, Abdullah Al Amin, Yoshiaki Nakano

    IEEE PHOTONICS TECHNOLOGY LETTERS   21 ( 1-4 )   42 - 44   2009年1月 (   ISSN:1041-1135   eISSN:1941-0174 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC  

    We report 92-km 2-hop field trial of an optical burst-switching (OBS) network testbed, consisting of a (Pb,La)(Zr,Ti)O-3 (PLZT) space switching matrix and a contention-resolving wavelength converter. Owing to the low polarization-dependent loss of the PLZT switch, we achieve stable forwarding of 40/10-Gb/s mixed-bit-rate signals with wavelength conversion. We also perform Layer-2 evaluation at a line rate of 40 Gb/s by using specially developed Ether-frame media converters. Loss-free transport of encapsulated Ether-frames is demonstrated successfully over the 2-hop OBS field testbed.

    DOI: 10.1109/LPT.2008.2008198

  • 280Gb/s Hybrid Optical Switching Demonstration combining Circuit and Multi-Wavlength Packet 査読

    Hideaki Imaizumi, Katsuya Watabe, Takuo Tanemura, Yoshiaki Nakano, Hiroyuki Morikawa

    2009 14TH OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC 2009)   664 - 665   2009年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    In this paper, we design a novel hybrid optical network architecture combining both MW-OPS and OCS, and experimentally demonstrate its feasibility in a 280-Gbps network testbed.

  • Design and Fabrication of Mach-Zehnder Interferometer Bistable Laser Diode All-Optical Flip-Flop 査読

    K. Takeda, M. Takenaka, T. Tanemura, Y. Nakano

    PS: 2009 INTERNATIONAL CONFERENCE ON PHOTONICS IN SWITCHING   230 - +   2009年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    We fabricate and experimentally demonstrate all-optical flip-flop switching based on novel Mach-Zehnder interferometer bistable laser structure. The MZI-BLD successfully acts as set-reset flip-flop with continuous light injection.

  • 200Gb/s Multi-Wavelength Optical Packet Switching with 2ns Ultra-fast Optical Switch 査読

    Mamoru Takagi, Hideaki Imaizumi, Takuo Tanemura, Shinji Iio, Masayuki Suehiro, Yoshiaki Nakano, Hiroyuki Morikawa

    2009 14TH OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC 2009)   670 - +   2009年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    In this paper, we demonstrate 200Gb/s Multi-Wavelength Optical Packet Switching with an ultra-fast optical switch. The feasibility has been confirmed by the experimental results.

  • Development and Field Demonstration of an Optical Burst Switching Testbed with PUT Optical Matrix Switch 査読

    Takuo Tanemura, Abdullah Al Amin, Yoshiaki Nakano

    PS: 2009 INTERNATIONAL CONFERENCE ON PHOTONICS IN SWITCHING   44 - +   2009年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    We summarize our recent results on field trial of optical burst switching node prototype developed under NEDO-funded Photonic Network Project. Stable switching and transmission of 40/10-Gbps; mixed-bitrate signals are achieved over 92-km 2-hop field testbed.

  • Fast 40 Gb/s optical packet switching using an all-optical flip-flop based on a single distributed feedback laser 査読

    K. Huybrechts, T. Tanemura, Y. Nakano, R. Baets, G. Morthier

    Conference on Optical Fiber Communication, Technical Digest Series   2009年

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    掲載種別:研究論文(国際会議プロシーディングス)  

    Fast all-optical switching of 40 Gb/s packets is demonstrated using a single off-theshelf DFB laser as all-optical flip-flop, thus offering a fast (150 ps) and economically viable method to implement a transparent network node. © 2008 IEEE.

    DOI: 10.1364/ofc.2009.omu4

  • Foreword. 査読

    Yoshiaki Nakano

    IEICE Transactions   92-C ( 7 )   905 - 906   2009年

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    掲載種別:研究論文(学術雑誌)  

    その他リンク: http://dblp.uni-trier.de/db/journals/ieicet/ieicet92c.html#journals/ieicet/Nakano09

  • Experimental Study on Wavelength Tunability of All-Optical Flip-Flop Based on Multimode-Interference Bistable Laser Diode 査読

    K. Takeda, M. Takenaka, T. Tanemura, Y. Nakano

    IEEE PHOTONICS JOURNAL   1 ( 1 )   40 - 47   2009年 (   ISSN:1943-0655 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC  

    We demonstrate a wavelength-tunable all-optical flip-flop (AOFF) based on a multimode-interference (MMI) bistable laser diode (BLD) with distributed Bragg reflectors (DBRs). The wavelength tuning can be achieved by the band-filling effect and the free-carrier plasma effect with carrier injections to the DBRs. The tuning range of 3.1 nm will enable flexible and reconfigurable design of future photonic integrated circuits (PICs). Since the DBR-MMI-BLD does not require cleaved facets for its operation, multiple AOFFs can be monolithically integrated on a single PIC. In addition, the device has a large operable bandwidth of wider than 34 nm, even when we tune the lasing wavelength. A dynamic flip-flop operation is also demonstrated with rising and falling times of faster than 280 and 228 ps, respectively. No waveform distortion is observed, even when we tune the lasing wavelength.

    DOI: 10.1109/JPHOT.2009.2025670

  • High mobility metal S/D III-V-On-Insulator MOSFETs on a Si substrate using direct wafer bonding 査読

    Yokoyama M, Yasuda T, Takagi H, Yamada H, Fukuhara N, Hata M, Sugiyama M, Nakano Y, Takenaka M, Takagi S

    Digest of Technical Papers - Symposium on VLSI Technology   242 - 243   2009年

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    掲載種別:研究論文(学術雑誌)  

    その他リンク: http://orcid.org/0000-0001-6802-3346

  • High-Speed 1x16 Optical Switch Monolithically Integrated on InP 査読

    I. M. Soganci, T. Tanemura, K. A. Williams, N. Calabretta, T. de Vries, E. Smalbrugge, M. K. Smit, H. J. S. Dorren, Y. Nakano

    2009 35TH EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION (ECOC)   2009年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:VDE VERLAG GMBH  

    We present the first fully integrated high-speed 1x16 InP optical switch based on arrayed phase modulators, demonstrating average extinction ratio of 17.0 dB, estimated on-chip loss of &lt;8 dB, and reconfiguration time of &lt;6 ns.

  • HOTARU: A novel concept of hybrid optical network architecture combining multi-wavelength packet and circuit switching 査読

    Hideaki Imaizumi, Li Hui, Katsuya Watabe, Takuo Tanemura, Yoshiaki Nakano, Hiroyuki Morikawa

    2009 15th Asia-Pacific Conference on Communications, APCC 2009   549 - 552   2009年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    This paper presents a novel Hybrid Optical neT-work ARchitecUre concept named HOTARU which combines multi-wavelength optical packet switching (MW-OPS) and optical circuit switching (OCS) in WDM networks
    herein, we also experimentally demonstrate its feasibility in a 400 Gbps network testbed. ©2009 IEEE.

    DOI: 10.1109/APCC.2009.5375570

  • Experimental Study on Dynamic Range of SOA Switch for Multi-Wavelength Optical Packet Switching 査読

    Li Hui, Hideaki Imaizumi, Takuo Tanemura, Yoshiaki Nakano, Hiroyuki Morikawa

    PS: 2009 INTERNATIONAL CONFERENCE ON PHOTONICS IN SWITCHING   253 - 254   2009年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    In this paper, we study on the input power dynamic range of SOA switches for MW-OPS. Power penalty are presented with approximately 15dB dynamic range for 16 wavelengths at an optical gain of 5dB.

  • Integrated phased-array 1×16 photonic switch for WDM optical packet switching application 査読

    I. M. Soganci, T. Tanemura, K. A. Williams, N. Calabretta, T. De Vries, E. Smalbrugge, M. K. Smit, H. J.S. Dorren, Y. Nakano

    2009 International Conference on Photonics in Switching, PS '09   2009年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    Integrated InP/InGaAsP phased-array 1×16 optical switch is fabricated and characterized for broadband WDM optical packet switching. Wavelength-insensitive operation covering the C-band and penalty-free transmission of 40-Gbps signal are demonstrated. ©2009 IEEE.

    DOI: 10.1109/PS.2009.5307760

  • Numerical and experimental study of the switching times and energies of DFB-laser based All-optical flip-flops 査読

    K. Huybrechts, A. Ali, T. Tanemura, Y. Nakano, G. Morthier

    PS: 2009 INTERNATIONAL CONFERENCE ON PHOTONICS IN SWITCHING   237 - +   2009年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    We report on the switching times and energies of a DFB all-optical flip-flop and their dependence on device and operating parameters. Numerical as well as experimental results are discussed.

  • Integrated 1 x 8 Optical Phased-Array Switch With Low Polarization Sensitivity for Broadband Optical Packet Switching 査読

    Ibrahim Murat Soganci, Takuo Tanemura, Yoshiaki Nakano

    IEEE PHOTONICS JOURNAL   1 ( 2 )   80 - 87   2009年 (   ISSN:1943-0655   eISSN:1943-0647 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC  

    An InP/InGaAsP integrated 1 x 8 optical phased-array switch is designed, fabricated, and characterized for high-throughput broadband wavelength-division multiplexed (WDM) optical packet switching application. With a single stage of phase shifters utilizing carrier-induced refractive index change, switching to the eight output ports is demonstrated successfully. The polarization-dependent loss is 2.2 dB in the worst case, and the wavelength-dependent loss is less than 2.5 dB across the entire C-band (1520-1580 nm) with the average extinction ratio of 17.7 dB. The measured reconfiguration time is shorter than 6 ns. Low-penalty transmission of a 40-Gb/s non-return-to-zero signal is also demonstrated for the first time. These features make the integrated phased-array switch an attractive candidate to be deployed in the future high-capacity optical packet switching networks.

    DOI: 10.1109/JPHOT.2009.2025971

  • Reaction Kinetics of GaN Metal-Organic Vapor-Phase Epitaxy Analyzed by Multi-Scale Profiles of Growth Rate 査読

    M. Sugiyama, S. Yasukochi, T. Shioda, Y. Shimogaki, Y. Nakano

    EUROCVD 17 / CVD 17   25 ( 8 )   507 - 512   2009年 (   ISSN:1938-5862 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:ELECTROCHEMICAL SOC INC  

    The growth mechanism and rate constants of GaN metal-organic vapor-phase epitaxy (MOVPE) have been unclear in spite of the necessity for large-scale production of this material. In this work, the major precursor of GaN has been deduced and its surface reaction rate constant has been obtained through the analysis of multi-scale growth-rate profiles both in the reactor-scale and in the micrometer-scale profiles that were obtained by selective-area growth. Usually, it is difficult to explore surface reaction kinetics, especially for the MOVPE of GaN, because of mass-transferlimited kinetics. This multi-scale analysis, however, has clarified that a single precursor, the gas-phase reaction product between (CH3)(3)Ga and NH3, leads to the growth of GaN with a surface reaction probability of approximately 0.4 at 1400 K which is a typical growth temperature. A lumped reaction model of GaN MOVPE was proposed that led to reasonable agreement between the simulated growth-rate profile in the reactor-scale and the corresponding measured profile.

    DOI: 10.1149/1.3207632

  • Polarization-Independent Broadband 1x8 Optical Phased-Array Switch Monolithically Integrated on InP 査読

    Ibrahim Murat Soganci, Takuo Tanemura, Yoshiaki Nakano

    OFC: 2009 CONFERENCE ON OPTICAL FIBER COMMUNICATION, VOLS 1-5   2909 - 2911   2009年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    An InP/InGaAsP 1x8 optical phased-array switch is designed, fabricated, and demonstrated for the first time. The device demonstrates successful operation in the entire C-band (1520-1580 nm) for both the TE- and TM-polarization states. (C) 2009 Optical Society of America

  • Simple and Compact InP Polarization Converter for Polarization-Multiplexed Photonic Integrated Circuits 査読

    T. Tanemura, T. Amemiya, K. Takeda, A. Higo, Y. Nakano

    2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2   436 - +   2009年 (   ISSN:1092-8081 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    We propose and investigate a novel type of waveguide polarization converter, which is particularly suited for monolithic integration in InP photonic integrated circuits. Efficient mode conversion with 0.4-dB loss and 16.6-dB extinction is demonstrated numerically.

  • SEMICONDUCTIVE PROPERTIES OF HETEROINTEGRATION OF INP/INGAAS ON HIGH DOPED SILICON WIRE WAVEGUIDE FOR SILICON HYBRID LASER 査読

    Ling-Han Li, Ryo Takigawa, Akio Higo, Masanori Kubota, Eiji Higurashi, Masakazu Sugiyama, Yoshiaki Nakano

    2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM)   230 - +   2009年 (   ISSN:1092-8669 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    The hetero-integration of InP/InGaAs on high doped silicon micro wires for Si hybrid laser using plasma assisted direct bonding was carried out. Bonding assisted pattern was used for increasing the bonding force of the silicon wire to InGaAs/InP bulk. The I-V characteristics of the highly doped silicon micro wire to InP/InGaAs bulk are measured and compared to the Si/InP bulk to bulk results. The improvement of semiconductor parameters of the hetero-integration by introducing long time annealing was also shown and discussed for its ability to realize the direct electrical pumping from Si wire to compound semiconductor active layer for silicon hybrid laser.

    DOI: 10.1109/ICIPRM.2009.5012490

  • SOURCE/DRAIN FORMATION BY USING EPITAXIAL REGROWTH OF N plus InP FOR III-V NMOSFETS 査読

    Mitsuru Takenaka, Koji Takeda, Takuya Hoshii, Takuo Tanemura, Masakazu Sugiyama, Yoshiaki Nakano, Shinichi Takagi

    2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM)   111 - 114   2009年 (   ISSN:1092-8669 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    Defect-free n-type InP source/drain for III-V nMOSFETs was successfully formed by epitaxial regrowth at 610 degrees C. The impurity concentration of 1 x 10(19) cm(-3) with the S/D junction steepness of around 10 nm/dec. was obtained.

    DOI: 10.1109/ICIPRM.2009.5012454

  • Wide Wavelength Operation of All-Optical Flip-Flop Using Mach-Zehnder Interferometer Bistable Laser Diode 査読

    Koji Takeda, Mitsuru Takenaka, Takuo Tanemua, Masaru Zaitsu, Yoshiaki Nakano

    2009 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1AND 2   585 - +   2009年 (   ISSN:1092-8081 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    We demonstrate all-optical flip-flop operation of Mach-Zehnder histable lasers with falling time Of less than 68 ps. The device can be controlled with continuous 58-nm wavelength range of input light.

    DOI: 10.1109/LEOS.2009.5343124

  • Polarization-Insensitive All-Optical Flip-Flop Using Tensile-Strained Multiple Quantum Wells 査読

    Takeda Koji, Kanema Yasuki, Takenaka Mitsuru, Tanemura Takuo, Nakano Yoshiaki

    IEEE PHOTONICS TECHNOLOGY LETTERS   20 ( 21-24 )   1851 - 1853   2008年11月 (   ISSN:1041-1135 )

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    掲載種別:研究論文(学術雑誌)  

    DOI: 10.1109/LPT.2008.2004350

  • Surface Reaction Kinetics of InP and InAs Metalorganic Vapor Phase Epitaxy Analyzed by Selective Area Growth Technique 査読

    Yunpeng Wang, Haizheng Song, Masakazu Sugiyama, Yoshiaki Nakano, Yukihiro Shimogaki

    JAPANESE JOURNAL OF APPLIED PHYSICS   47 ( 10 )   7788 - 7792   2008年10月 (   ISSN:0021-4922 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:JAPAN SOCIETY APPLIED PHYSICS  

    The surface kinetic information of metalorganic vapor phase epitaxy (MOVPE) is difficult to obtain, because growth rate is normally limited by diffusional mass-transfer rate. In this study, by using a selective area growth (SAG) technique. the surface kinetics has been successfully clarified for InP and InAs growth. The temperature dependence of surface reaction rate constant (k(s)) was examined, and it revealed that for both compounds k(s) continuously increases with activation energies of 20.1 kJ/mol for InP and 15.0 kJ/mol for InAs. The sticking probability of indium species, converted from k(s), was in the range of 0.54-0.79. This is two or three times that of gallium species during GaAs MOVPE. For indium-related binary Compounds, the k(s) of InP is always larger than that of InAs. This kinetic information suggests that group V elements have a significant effect on the k(s), of Ill-V binary compounds. These preliminary results show that indium species have quite different reactivities in phosphorus and arsenic sites, which could be fundamental for the kinetic analysis of ternary and quaternary compounds, such as InAsP and InGaAsP. [DOI: 10.1143/JJAP.47.7788]

    DOI: 10.1143/JJAP.47.7788

  • Highly-permissible alignment tolerance of back-illuminated photo-diode array attached with a self-aligned micro ball lens 査読

    Kazuhiro Nishide, Kenji Ikeda, Xueliang Song, Shurong Wang, Yoshiaki Nakano

    IEICE TRANSACTIONS ON ELECTRONICS   E91C ( 9 )   1472 - 1479   2008年9月 (   ISSN:0916-8524   eISSN:1745-1353 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG  

    Simulation and fabrication results on back-illuminated 4-channel photodiode (PD) array with a self-aligned micro ball lens are described. The channel pitch and diameter of each photosensitive area are 250 mu m and 40 mu m, respectively. Measured photocurrent is 1.92 times larger than that without a lens. Alignment tolerance between the single mode fiber (SMF) optical axis and the photodiode is improved from 21.2 mu m to 42.7 mu m. Moreover, the separation tolerance between the fiber and the lens is 210.5 mu m. These large tolerances agree with simulation results, demonstrating that the device configuration is suitable for receivers for multi-channel inter-connection. Frequency response and inter-channel cross talk are also discussed.

    DOI: 10.1093/ietele/e91-c.9.1472

  • Design and scalability analysis of optical phased-array 1 × N switch on planar lightwave circuit. 査読

    Takuo Tanemura, Yoshiaki Nakano

    IEICE Electronic Express   5 ( 16 )   603 - 609   2008年8月 (   ISSN:1349-2543 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1587/elex.5.603

  • Kinetic analysis of InN selective area metal-organic vapor phase epitaxy 査読

    Tomonari Shioda, Masakazu Sugiyama, Yukihiro Shimogaki, Yoshiaki Nakano

    APPLIED PHYSICS EXPRESS   1 ( 7 )   2008年7月 (   ISSN:1882-0778 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:JAPAN SOCIETY APPLIED PHYSICS  

    The selective area metal-organic vapor phase epitaxy (SA-MOVPE) of InN was realized and its kinetics was investigated. InN deposition selectivity between the mask and the crystal surface was found to strongly depend on the growth temperature, and good selectivity was obtained above 600 degrees C. Under this growth condition, the thickness profile of InN between the masks exhibited a catenary shape, which resulted from the vapor phase diffusion. This fact shows that vapor phase diffusion is the dominant supply mechanism in InN SA-MOVPE as well as for the growth of GaN and InGaAsP. These kinetic analysis will contribute to the development of monolithically integrated AlInGaN-based devices. (C) 2008 The Japan Society of Applied Physics.

    DOI: 10.1143/APEX.1.071102

  • Design and fabrication of optical waveguide modulator integrated with silicon wire waveguide 査読

    A. Higo, H. Fujita, H. Toshiyoshi, Y. Nakano

    Proc. 4th Asia Pacific Conference on Transducers and Micro-Nano Technology (APCOT 2008)   2A2 - 4   2008年6月

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

  • Reactor-scale profile of group-V composition of InGaAsP studied by fluid dynamics simulation and in situ analysis of surface kinetics 査読

    Ryusuke Onitsuka, Masakazu Sugiyama, Yukihiro Shimogaki, Yoshiaki Nakano

    JOURNAL OF CRYSTAL GROWTH   310 ( 12 )   3042 - 3048   2008年6月 (   ISSN:0022-0248   eISSN:1873-5002 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:ELSEVIER SCIENCE BV  

    Reactor-scale simulation of metalorganic vapor phase epitaxy (MOVPE) by computational fluid dynamics is now widely attempted, but it is still difficult to predict group V composition precisely for InGaAsP. In this study, desorption of As and P from the surface of GaAs, InAs, GaP, InP, InGaAs and InGaP was measured around growth temperatures using in situ reflectance anisotropy (RA) spectroscopy. Time transient curves of RA were measured when group V supply was turned on/off and the rate constants of the desorption of As and P were measured assuming first-order kinetics. These data were incorporated into the simulation to obtain the composition of InGaAsP. The simulated distribution of group V composition showed better agreement with experimental data than the results using previous kinetic data. (c) 2008 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jcrysgro.2008.03.005

  • InP-InGaAsP integrated 1x5 optical switch using arrayed phase shifters 査読

    Tanemura Takuo, Takenaka Mitsuru, Al Amin Abdullah, Takeda Koji, Shioda Tomonari, Sugiyama Masakazu, Nakano Yoshiaki

    IEEE PHOTONICS TECHNOLOGY LETTERS   20 ( 9-12 )   1063 - 1065   2008年5月 (   ISSN:1041-1135 )

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    掲載種別:研究論文(学術雑誌)  

    DOI: 10.1109/LPT.2008.924290

  • Static optical cross phase modulation in active multimode interference couplers 査読

    S. Ibrahim, X. Song, M. Sugiyama, Y. Nakano

    Optical and Quantum Electronics   40 ( 5-6 )   419 - 424   2008年4月 (   ISSN:0306-8919 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    The static performance of active multimode interference (MMI) couplers is analyzed in the presence of two different optical signals using a beam propagation method (BPM)-based simulation. To examine the feasibility of a novel all-optical switch based on active MMI
    the simulation is mainly used to evaluate the amount of phase change resulting in the output of one optical signal by varying the intensity of the other at different injected carrier density. The simulation code is based on the finite difference (FD)-BPM and is including the distribution of photon density, carrier density, and refractive index. © 2008 Springer Science+Business Media, LLC.

    DOI: 10.1007/s11082-008-9215-8

  • Abrupt InGaP/GaAs heterointerface grown by optimized gas-switching sequence in metal organic vapor phase epitaxy 査読

    Takayuki Nakano, Tomonari Shioda, Eiji Abe, Masakazu Sugiyama, Naomi Enomoto, Yoshiaki Nakano, Yukihiro Shimogaki

    APPLIED PHYSICS LETTERS   92 ( 11 )   2008年3月 (   ISSN:0003-6951 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:AMER INST PHYSICS  

    Fabrication of abrupt InGaP/GaAs heterointerfaces has been difficult using metal organic vapor phase epitaxy (MOVPE) due to the exchange of P and As during the fabrication steps. An optimized gas-switching sequence to fabricate heterointerface of InGaP on GaAs layer by MOVPE was previously developed in which the unstable top surface layer of GaAs is stabilized and the exchange of P and As between InGaP and GaAs layers is suppressed. In this study, the effect of this optimized gas-switching sequence was quantitatively evaluated by using scanning transmission electron microscopy (STEM). Changes in atomic composition from GaAs to InGaP at the interface at the atomic layer level were revealed by using Z-contrast method in STEM. Quantitative evaluation using the Z-contrast method confirmed that the abruptness of the GaAs/InGaP interface was improved by this optimized gas-switching sequence. (c) 2008 American Institute of Physics.

    DOI: 10.1063/1.2884694

  • Kinetics of subsurface formation during metal-organic vapor phase epitaxy growth of InP and InGaP 査読

    Takayuki Nakano, Masakazu Sugiyama, Yoshiaki Nakano, Yukihiro Shimogaki

    JAPANESE JOURNAL OF APPLIED PHYSICS   47 ( 3 )   1473 - 1478   2008年3月 (   ISSN:0021-4922 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:JAPAN SOC APPLIED PHYSICS  

    InGaP layers grown by metal-organic vapor phase epitaxy (MOVPE) often have an In-rich region within several nanometers from the top of the film, which cannot be explained by normal surface segregation theory. This surface segregation deteriorates the interface abruptness of the InGaP/GaAs system, which is attractive for high-performance devices. This segregation in lattice-matched InGaP/GaAs systems can be explained by considering a "subsurface", where unstable surface layers play an important role in controlling the composition of grown epi-layers. This subsurface is formed at the beginning of crystal growth, and its thickness is in a steady state under normal continuous epitaxial growth. In this study, the existence of a subsurface during the MOVPE growth of InP and InGaP is experimentally confirmed through kinetic analysis involving a flow modulation method. The kinetic parameters, such as the adsorption and desorption rate constants of In and Ga species, and the crystallization rate from the subsurface are estimated from experimental data and are then used to explain the tendency of In surface segregation in InGaP-MOVPE.

    DOI: 10.1143/JJAP.47.1473

  • Semiconductor waveguide optical isolator incorporating ferromagnetic epitaxial MnSb for high temperature operation 査読

    Tomohiro Amemiya, Yusuke Ogawa, Hiromasa Shimizu, Hiro Munekata, Yoshiaki Nakano

    Applied Physics Express   1 ( 2 )   2008年2月 (   ISSN:1882-0778 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    A 1.5-μm nonreciprocal-loss waveguide optical isolator having improved transverse-magnetic-mode (TM-mode) isolation ratio was developed. The device consisted of an In GaAIAs/InP semiconductor optical amplifier waveguide covered with a ferromagnetic epitaxial MnSb layer. Because of the high Curie temperature (Tc = 314°C) and strong magneto-optical effect of MnSb, the nonreciprocal propagation of 11-12dB/mm has been obtained at least up to 70°C. © 2008 The Japan Society of Applied Physics.

    DOI: 10.1143/APEX.1.022002

  • Demonstration of deflection routing with layer-2 evaluation at 40 Gb/s in a three-node optical burst switching testbed 査読

    Al Amin Abdullah, Takenaka Mitsuru, Tanemura Takuo, Shimizu Katsuhiro, Inohara Ryo, Nishimura Kohsuke, Usami Masashi, Takita Yutaka, Kai Yutaka, Onaka Hiroshi, Uetsuka Hisato, Nakano Yoshiaki

    IEEE PHOTONICS TECHNOLOGY LETTERS   20 ( 1-4 )   178 - 180   2008年1月 (   ISSN:1041-1135 )

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    掲載種別:研究論文(学術雑誌)  

    DOI: 10.1109/LPT.2007.912970

  • Absorption saturation of AIN-based waveguide utilizing intersubband transition in GaN/AlN quantum wells 査読

    Norio Iizuka, Toshimasa Shimizu, Chaiyasit Cumtornkittikul, Masakazu Sugiyama, Yoshiaki Nakano

    2008 Joint Conference of the Opto-Electronics and Communications Conference and the Australian Conference On Optical Fibre Technology, OECC/ACOFT 2008   2008年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    An AlN-based intersubband optical switch was investigated. Narrow absorption spectrum and low insertion loss were obtained. Absorption saturation by 10 dB was achieved at a wavelength of 1.42 μm with an energy of 50 pJ.

    DOI: 10.1109/OECCACOFT.2008.4610534

  • Characterization of 1x5 InP/InGaAsP Waveguide Switch Based on Optical Phased Array 査読

    Takuo Tanemura, Koji Takeda, Yoshiaki Nakano

    2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM)   279 - 282   2008年 (   ISSN:1092-8669 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    A monolithically integrated 1x5 InP/InGaAsP optical switch based on optical phased array is fabricated and characterized. Wide operating bandwidth covering entire C-band (1520-1580 nm) and nanoseconds dynamic response are demonstrated for the first time.

  • A NOVEL ETCHING-OXIDATION FABRICATION METHOD FOR 3D NANO STRUCTURES ON SILICON AND ITS APPLICATION TO SOI SYMMETRIC WAVEGUIDE AND 3D TAPER SPOT SIZE CONVERTER 査読

    Ling-Han Li, Akio Higo, Masanori Kubota, Masakazu Sugiyama, Yoshiaki Nakano

    2008 IEEE/LEOS INTERNATIONAL CONFERENCE ON OPTICAL MEMS AND NANOPHOTONICS   27 - +   2008年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    A novel etching and oxidation method utilizing space effect of dry etching for three dimensional silicon structure is presented. Testing devices of SOI symmetric waveguide with ultra thick SiO2 cladding and silicon waveguide structure integrated with 3D taper spot size converter are fabricated using this method

  • Cross-port cross gain modulation in active MMI 査読

    Salah Ibrahim, Koji Takeda, Xueliang Song, Masakazu Sugiyama, Yoshiaki Nakano

    2008 INTERNATIONAL CONFERENCE ON PHOTONICS IN SWITCHING   44 - 45   2008年 (   ISSN:2155-8515 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    Cross gain modulation between two different optical signals, inserted through separate ports to an active MMI, has been experimentally measured. The observed trend of modulation reduction by increase of modulated signal power matches previous simulation results. An associated XPM is expected and could be optimized to enable using the active MMI in all-optical switching.

  • Design and fabrication of beam-deflecting optical switch on InP 査読

    Takuya Fujimura, Takuo Tanemura, Yoshiaki Nakano

    2008 Int. Nano-Optoelectronics Workshop, iNOW 2008 in Cooperation With Int. Global-COE Summer School (Photonics Integration-Core Electronics: PICE) and 31st Int. Symposium on Optical Communications   223 - 224   2008年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    We propose and design a beam-deflecting 1x8 InGaAsP/InP optical switch with carrier-induced tunable prism and aspheric lenses. High switching efficiency of -1.9 dB at 1.93-deg deflection angle is obtained. ©2008 IEEE.

    DOI: 10.1109/INOW.2008.4634518

  • Bit rate transparent optical burst switching with contention resolving wavelength conversion 査読

    A. Al Amin, K. Shimizu, M. Takenaka, T. Tanemura, K. Nishimura, H. Onaka, T. Hatta, A. Kasukawa, S. Tsuji, Y. Kondo, Y. Urino, H. Uetsuka, Y. Nakano

    OFC/NFOEC 2008 - 2008 Conference on Optical Fiber Communication/National Fiber Optic Engineers Conference   2008年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    Optical burst switching using fast, bit-rate transparent switches is presented. Random contention is handled without using optical memory by wavelength conversion. We demonstrate error-free 10 and 40Gb/s burst contention resolution in a 5×5 node prototype. © 2007 Optical Society of America.

    DOI: 10.1109/OFC.2008.4528633

  • Dynamic Operation of Polarization Insensitive All-Optical Flip-Flop Based on Multimode-Interference Bistable Laser Diode 査読

    Koji Takeda, Yasuki Kanema, Mitsuru Takenaka, Takuo Tanemura, Yoshiaki Nakano

    2008 34TH EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION (ECOC)   2008年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    We demonstrate polarization-insensitive all-optical flip-flop based on multimode-interference bistable laser diode. Dynamic switching is observed without waveform distortion even when the input polarization state is scrambled.

  • Experimental Demonstration of Optical Burst Switch Prototype Equipped with Pre-emptive Scheduler for Absolute QoS Guarantees 査読

    Takuo Tanemura, Abdullah Al Amin, Yoshiaki Nakano

    2008 INTERNATIONAL CONFERENCE ON PHOTONICS IN SWITCHING   202 - +   2008年 (   ISSN:2155-8515 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    We experimentally demonstrate QoS-aware optical burst-switching router prototype with a PLZT switch matrix and shared wavelength converter. Using the pre-emptive dropping scheme, we confirm successful service differentiation of high-priority burst signals.

  • Epitaxial lateral overgrowth of InGaAs on SiO2 from (111) Si micro channel areas 査読

    Hoshii Takuya, Deura Momoko, Sugiyama Masakazu, Nakane Ryosho, Sugahara Satoshi, Takenaka Mitsuru, Nakano Yoshiaki, Takagi Shinichi

    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9   5 ( 9 )   2733 - +   2008年 (   ISSN:1862-6351 )

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    掲載種別:研究論文(学術雑誌)  

    DOI: 10.1002/pssc.200779309

  • Integrated optical devices and circuits for photonic networking 査読

    Yoshiaki Nakano

    2008 Int. Nano-Optoelectronics Workshop, iNOW 2008 in Cooperation With Int. Global-COE Summer School (Photonics Integration-Core Electronics: PICE) and 31st Int. Symposium on Optical Communications   81 - 82   2008年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    A review is given on InP-based integrated optical devices for robust and efficient photonic networking. The devices include an all-optical flip-flop for digital processing and memory functions in the network, and a phased-array optical matrix switch for fast and scalable switching of optical burst/packets. ©2008 IEEE.

    DOI: 10.1109/INOW.2008.4634454

  • Nonreciprocal Polarization Converter Consisting of Asymmetric Waveguide with Ferrimagnetic Ce:YIG 査読

    Tomohiro Arnemiya, Takuo Tanemura, Yoshiaki Nakano

    NUSOD '08: PROCEEDINGS OF THE 8TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES   53 - 54   2008年 (   ISSN:2158-3242 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    A nonreciprocal polarization converter compatible with InP-based photonic integrated circuits is proposed. The device consists of an asymmetric InGaAsP waveguide combined with a ferrimagnetic Ce:YIG layer. A nonreciprocal TE-TM mode conversion efficiency of 93% can be obtained with a device length of 0.27 mm.

  • Numerical and experimental study on beam-deflecting planar optical switch on InP 査読

    Takuya Fujimura, Takuo Tanemura, Yoshiaki Nakano

    Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS   461 - 462   2008年 (   ISSN:1092-8081 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    We propose and design a novel type of beam-deflecting 1x8 InGaAsP/InP optical switch with carrier-induced tunable prism and aspheric lenses. High switching efficiency of -1.9 dB is obtained numerically. A preliminary measurement supports the validity of simulation, indicating the feasibility of the device. ©2008 IEEE.

    DOI: 10.1109/LEOS.2008.4688690

  • POLARIZATION INSENSITIVE OPERATION OF MULTIMODE INTERFERENCE BISTABLE LASER ALL-OPTICAL FLIP-FLOP 査読

    Koji Takeda, Yasuki Kanema, Mitsuru Takenaka, Takuo Tanemura, Yoshiaki Nakano

    2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM)   182 - +   2008年 (   ISSN:1092-8669 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    Multimode interference bistable laser diode all-optical flip-flop has been considered to be a clever candidate to achieve all-optical memory devices. In this paper, basic results of polarization-insensitive operation of all-optical flip-flop are reported. Polarization-insensitive operation of static flip-flop was demonstrated with injection power level higher than +3 dBm.

  • Phase modulator with InGaAs/InAlAs FACQW grown by MOVPE 査読

    Ryo Hasegawa, Yutaka Sawai, Tomohiro Amemiya, Taro Arakawa, Takuo Tanemura, Hiromasa Simizu, Kunio Tada, Yoshiaki Nakano

    2008 Joint Conference of the Opto-Electronics and Communications Conference and the Australian Conference On Optical Fibre Technology, OECC/ACOFT 2008   2008年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    The optical properties of InGaAs/InAlAs five-layer asymmetric coupled quantum well (FACQW) grown by MOVPE are investigated. The FACQW phase modulator is fabricated and its large phase shift is successfully observed.

    DOI: 10.1109/OECCACOFT.2008.4610533

  • Semiconductor waveguide optical isolators incorporating ferromagnetic epitaxial MnX (X=As or Sb) 査読

    T. Amemiya, Y. Ogawa, H. Shimizu, M. Tanaka, H. Munekata, Y. Nakano

    2008 Conference on Quantum Electronics and Laser Science Conference on Lasers and Electro-Optics, CLEO/QELS   2008年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    TM-mode waveguide optical isolators consisting of semiconductor waveguides with ferromagnetic MnX(X=As, Sb) layers were developed. The device with a MnSb layer had an isolation ratio of 12 dB/mm in the wavelength range 1530-1555 nm. © 2008 Optical Society of America.

    DOI: 10.1109/CLEO.2008.4551354

  • Surface plasmon polariton propagations in bent metal wires on a dielectric substrate 査読

    H. Shinojima, Y. Katagiri, Y. FooCheong, I. Kobayashi, Y. Nakano

    Proceedings of SPIE - The International Society for Optical Engineering   7266   2008年 (   ISSN:0277-786X )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    We observed a propagation of surface plasmon polaritons (SPPs) along bent Au-wires on a thin SiO2-coat-InP substrate with the bending radius R from 20 to 1000 μm and evaluated the bending-part attenuation coefficients, i.e., the bending losses of propagating SPPs along them with R from 20 to 400 μm by measuring the transmittance of SPPs. We discussed about the SPP propagation and the applicability to an optical electronic device and circuit of SPPs. © 2008 SPIE.

    DOI: 10.1117/12.816457

  • Role of vapor-phase diffusion in selective-area MOVPE of InGaN MQWs 査読

    Yuki Tomita, Tomonari Shioda, Yoshiaki Nakano, Masakazu Sugiyama

    2008 Int. Nano-Optoelectronics Workshop, iNOW 2008 in Cooperation With Int. Global-COE Summer School (Photonics Integration-Core Electronics: PICE) and 31st Int. Symposium on Optical Communications   163 - 164   2008年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    Selective-area growth (SAG) of InGaN/GaN multiple quantum wells (MQWs) for multiple-wavelength LED is fabricated and characterized. As a result, the emission peak shifts to longer wavelengths and the wider mask leads to longer wavelength. ©2008 IEEE.

    DOI: 10.1109/INOW.2008.4634493

  • Saturation of intersubband absorption in GaN/AIN-based waveguide integrated with spot-size converter 査読

    Norio Iizuka, Haruhiko Yoshida, Nobuto Managaki, Toshimasa Shimizu, Sodabanlu Hassanet, Masakazu Sugiyama, Yoshiaki Nakano

    Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS   597 - 598   2008年 (   ISSN:1092-8081 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    An AlN-based intersubband optical switch was fabricated with spot-size converter utilizing Si3N4 as a cladding layer. Intersubband absorption was observed at 1.48 μm. Absorption saturation by 5 dB was achieved with energy of 25 pJ. ©2008 IEEE.

    DOI: 10.1109/LEOS.2008.4688759

  • Scalability of Photonic 1xN Switch Based on Arrayed Phase Shifters 査読

    Takuo Tanemura, Yoshiaki Nakano

    2008 INTERNATIONAL CONFERENCE ON PHOTONICS IN SWITCHING   58 - 59   2008年 (   ISSN:2155-8515 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    Scalability of an optical-phased-array 1xN switch is studied analytically. Compared with a conventional tree-structured switch, we show that the phased-array switch has superior scalability in terms of device size under wide range of practical conditions.

  • Wavelength tunability of all-optical flip-flop using distributed Bragg reflectors 査読

    Koji Takeda, Mitsuru Takenaka, Takuo Tanemua, Yoshiaki Nakano

    Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS   192 - 193   2008年 (   ISSN:1092-8081 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    We investigate wavelength tunability of all-optical flip-flop using distributed Bragg reflectors. Single-mode lasing and flip-flop switching is obtained with more than 24.7-dB extinction ratio and 21.5-dB SMSR at 3.1-nm tuning range. ©2008 IEEE.

    DOI: 10.1109/LEOS.2008.4688554

  • GaN selective area metal-organic vapor phase epitaxy: Prediction of growth rate enhancement by vapor phase diffusion model 査読

    Tomonari Shioda, Yuki Tomita, Tviasakazu Sugiyama, Yukihiro Shimogaki, Yoshiaki Nakano

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   46 ( 41-44 )   L1045 - L1047   2007年11月 (   ISSN:0021-4922 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:INST PURE APPLIED PHYSICS  

    Thickness profiles of GaN grown by selective area metal-organic vapor phase epitaxy (SA-MOVPE) were successfully reproduced by a vapor phase diffusion model that employs only one parameter-effective diffusion length D/k(s). The value of D/ks of Ga-containing precursors changes from 10 to 50 mu m under growth temperature of 1000-1250 degrees C and reactor total pressure of 100 mbar. It was confirmed that, in the wide-stripe SA-MOVPE of GaN, the vapor phase diffusion of Ga-containing precursors govern the profile of growth rate. Numerical simulation using the vapor phase diffusion model is of great help for the design and control of thickness profiles in the SA-MOVPE of GaN.

    DOI: 10.1143/JJAP.46.L1045

  • Fabrication and measurement of AIN cladding AIN/GaN multiple-quantum-well waveguide for all-optical switching devices using intersubband transition 査読

    Toshimasa Shimizu, Chaiyasit Kumtornkittikul, Norio Iizuka, Nobuo Suzuki, Masakazu Sugiyama, Yoshiaki Nakano

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   46 ( 10A )   6639 - 6642   2007年10月 (   ISSN:0021-4922 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:JAPAN SOC APPLIED PHYSICS  

    We measured intersubband (ISB) absorption in high-mesa waveguides consisting of AIN cladding layers and AIN/GaN multiple quantum wells (MQW). Inductively coupled plasma (ICP) dry etching for waveguide fabrication was optimized to reduce propagation loss by achieving vertical and smooth sidewalls. We changed the ICP/RF power and introduced intervals during the etching process in order to overcome the induction time of the etching rate and the instability of plasma observed from long etching experiments. The ISB absorption greater than 20 dB was clearly observed at around 1.5 pm. The insertion loss of an 800-mu m-long waveguide was 5-1OdB including the coupling loss between a fiber and the end of the waveguide. With this low-loss waveguide, we observed a saturation of 10dB in the ISB absorption with 100pJ probe light introduced to the waveguide. We thus demonstrated the possibility of achieving all-optical switching devices with low loss using the ISB transition of AIN-based materials.

    DOI: 10.1143/JJAP.46.6639

  • Low temperature metal organic vapor phase epitaxial growth of AIN by pulse injection method at 800 degrees C 査読

    Jung-Seung Yang, Hassanet Sodabanlu, Ichitaro Waki, Masakazu Sugiyama, Yoshiaki Nakano, Yukihiro Shimogaki

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   46 ( 36-40 )   L927 - L929   2007年10月 (   ISSN:0021-4922 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:JAPAN SOC APPLIED PHYSICS  

    High quality AlN layer could be grown at 800 degrees C by metal organic vapor phase epitaxy (MOVPE) by pulse injection (PI) method in which trimethylaluminium (TMAl) and NH3 are alternately supplied. Crystal quality of AlN layer grown by PI method (PI-AlN) was comparable with AlN layer grown by conventional MOVPE with continuous sources flow sequence (continuous-AlN, C-AlN) at 1240 degrees C showing similar (0002) symmetric and (1012) skew symmetric full width at half maximum (FWHM) values by high resolution X-ray diffraction (HRXRD). Especially, it is noticeable that best crystal quality was observed when the growth rate was controlled to I monolayer/cycle. Moreover, PI method was proved to be effective in improving surface roughness of AlN layer. The root-mean-square (RMS) roughness of PI-AlN layer was 0.9 nm, which is three times smaller than C-AlN layer grown at same temperature with PI-AlN layer.

    DOI: 10.1143/JJAP.46.L927

  • 1.54-μm TM-mode waveguide optical isolator based on the nonreciprocal-loss phenomenon: Device design to reduce insertion loss 査読

    T. Amemiya, H. Shimizu, M. Yokoyama, P. N. Hai, M. Tanaka, Y. Nakano

    Applied Optics   46 ( 23 )   5784 - 5791   2007年8月 (   ISSN:1539-4522 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:OSA - The Optical Society  

    We developed a 1.5-μm band TM-mode waveguide optical isolator that makes use of the nonreciprocalloss phenomenon. The device was designed to operate in a single mode and consists of an InGaAlAs/InP ridge-waveguide optical amplifier covered with a ferromagnetic MnAs layer. The combination of the optical waveguide and the magnetized ferromagnetic metal layer produces a magneto-optic effect called the nonreciprocal-loss phenomenon-a phenomenon in which the propagation loss of light is larger in backward propagation than it is in forward propagation. We propose the guiding design principle for the structure of the device and determine the optimized structure with the aid of electromagnetic simulation using the finite-difference method. On the basis of the results, we fabricated a prototype device and evaluated its operation. The device showed an isolation ratio of 7.2 dB/mm at a wavelength from 1.53 to 1.55 μm. Our waveguide isolator can be monolithically integrated with other waveguide-based optical devices on an InP substrate. © 2007 Optical Society of America.

    DOI: 10.1364/AO.46.005784

  • 154-μm TM-mode waveguide optical isolator based on the nonreciprocal-loss phenomenon: device design to reduce insertion loss 査読

    T. Amemiya, H. Shimizu, M. Yokoyama, P. N. Hai, M. Tanaka, Y. Nakano

    Applied Optics   46 ( 23 )   5784 - 5784   2007年8月 (   ISSN:0003-6935 )

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:The Optical Society  

    DOI: 10.1364/ao.46.005784

  • InP photonic wire waveguide using InAlAs oxide cladding layer 査読

    M. Takenaka, Y. Nakano

    OPTICS EXPRESS   15 ( 13 )   8422 - 8427   2007年6月 (   ISSN:1094-4087 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:OPTICAL SOC AMER  

    We proposed a novel InP based photonic wire waveguide with an InAlAs oxide cladding. The InGaAsP/InAlAs-oxide structure in the vertical direction provides an ultrahigh index contrast waveguide, and it allows a bend radius of a few mu m with no vertical leakage loss. The InP photonic wire waveguide with a 500x300-nm rectangular channel core (refractive index n similar to 3.36) and an InAlAs oxide cladding (n similar to 2.4) was numerically analyzed using the three-dimensional time-domain beam propagation method (3D TD-BPM). We predicted that the U-bend waveguide with a 3-mu m bend radius can be realized with the propagation loss of &lt; 0.5 dB. (c) 2007 Optical Society of America

  • Four Channel Ridge DFB Laser Array for 1.55 µm CWDM Systems by Wide-Stripe Selective Area MOVPE. 査読

    Jesse Darja, Melvin J. Chan, Shu-Rong Wang, Masakazu Sugiyama, Yoshiaki Nakano

    IEICE Transactions   E90C ( 5 )   1111 - 1117   2007年5月 (   ISSN:0916-8524   eISSN:1745-1353 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1093/ietele/e90-c.5.1111

  • Fabrication of a monolithically integrated WDM channel selector using single step selective area MOVPE and its characterization 査読

    Abdullah Al Amin, Kenji Sakurai, Tomonari Shioda, Masakazu Sugiyama, Yoshiaki Nakano

    IEICE TRANSACTIONS ON ELECTRONICS   E90C ( 5 )   1124 - 1128   2007年5月 (   ISSN:0916-8524   eISSN:1745-1353 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG  

    An 8ch, 400GHz monolithically integrated WDM channel selector featuring an array of quantum well semiconductor optical amplifiers (SOA) and arrayed waveguidegrating demultiplexer is presented. Reduction of fabrication complexity was achieved by using a single step selective area MOVPE to realize the different bandgap profiles for the SOA array and passive region. The selective growth mask dimensions were optimized by simulation. Dry-etching with short bending radii of 20 mu m resulted in compact device size of 7 mm x 2.5 mm. Static channel selection with high ON-OFF ratio of &gt; 40 dB was achieved.

    DOI: 10.1093/ietele/e90-c.5.1124

  • Optical burst switching router with 40-,10-Gb/s bit-rate transparent contention resolution 査読

    Al Amin Abdullah, Shimizu Katsuhiro, Takenaka Mitsuru, Tanemura Takuo, Inohara Ryo, Nishimura Kohsuke, Horiuchi Yukio, Usami Masashi, Takita Yutaka, Kai Yutaka, Aoki Yasuhiko, Onaka Hiroshi, Miyazaki Yasunori, Miyahara Toshiharu, Hatta Tatsuo, Motoshima Kuniaki, Kagimoto Taishi, Kurobe Tatsuro, Kasukawa Akihiko, Arimoto Hideaki, Tsuji Shinji, Uetsuka Hisato, Nakano Yoshiaki

    IEEE PHOTONICS TECHNOLOGY LETTERS   19 ( 9-12 )   726 - 728   2007年5月 (   ISSN:1041-1135 )

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    掲載種別:研究論文(学術雑誌)  

    DOI: 10.1109/LPT.2007.895443

  • Ridge semiconductor laser with laterally undercut etched current confinement structure 査読

    Nong Chen, Jesse Darja, Shinichi Narata, Kenji Ikeda, Kazuhiro Nishidett, Yoshiaki Nakano

    IEICE TRANSACTIONS ON ELECTRONICS   E90C ( 5 )   1105 - 1110   2007年5月 (   ISSN:0916-8524   eISSN:1745-1353 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG  

    In this paper we modeled and analyzed the ridge type InGaAlAs/InP semiconductor laser with lateral current confinement structure, and optimized the design for the ridge wave guide with the current confinement. We proposed and fabricated the ridge type InGaAlAs/InP laser with a cost effective selective undercut etching method and demonstrated the improvement of the ridge laser performance. This paper provides a solution to solve the cost/yield issue for conventional BH (buried hetero-structure) type laser and performance issue for conventional ridge type laser.

    DOI: 10.1093/ietele/e90-c.5.1105

  • Special section on recent advances in integrated photonic devices 査読

    Yoshiaki Nakano

    IEICE TRANSACTIONS ON ELECTRONICS   E90C ( 5 )   1035 - 1036   2007年5月 (   ISSN:0916-8524   eISSN:1745-1353 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG  

    DOI: 10.1093/ietele/e90-c.5.1035

  • AlN waveguide with GaN/AlN quantum wells for all-optical switch utilizing intersubband transition 査読

    Chaiyasit Kumtornkittikul, Toshimasa Shimizu, Norio Iizuka, Nobuo Suzuki, Masakazu Sugiyama, Yoshiaki Nakano

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   46 ( 12-16 )   L352 - L355   2007年4月 (   ISSN:0021-4922 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:JAPAN SOC APPLIED PHYSICS  

    We report the first successful realization of an AIN-waveguide-based intersubband transition device prepared using both metalorganic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) techniques to grow A1N-cladding GaN/AIN quantum wells. An intersubband absorption wavelength of as short as 1.3 mu m is confirmed with a new measurement method using an ultrawide-spectrum light source. With this method, the intersubband absorption spectra of an AIN high-mesa waveguide can be directly observed for the first time. The intersubband absorption saturation measurements also show a good device characteristic with a saturation of 7 dB for a transverse magnetic (TM) polarized input pulse energy of 200 pJ.

    DOI: 10.1143/JJAP.46.L352

  • Dynamic operation of all-optical flip-flops with distributed Bragg reflectors for self-routing of 10-Gbit/s optical packets 査読

    Takeda Koji, Takenaka Mitsuru, Raburn Maura, Kanema Yasuki, Barton Jonathon S, Song Xueliang, Nakano Yoshiaki

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   46 ( 3A )   1028 - 1032   2007年3月 (   ISSN:0021-4922 )

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    掲載種別:研究論文(学術雑誌)  

    DOI: 10.1143/JJAP.46.1028

  • High-resolution depth profile of the InGaP-on-GaAs heterointerface by FE-AES and its relationship to device properties 査読

    O. Ichikawa, N. Fukuhara, M. Hata, T. Nakano, M. Sugiyama, Y. Shimogaki, Y. Nakano

    JOURNAL OF CRYSTAL GROWTH   298   85 - 89   2007年1月 (   ISSN:0022-0248 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:ELSEVIER SCIENCE BV  

    At InGaP-on-GaAs heterointerface, transition layer is formed during metalorganic vapor phase epitaxy (MOVPE) growth that can affect device properties. Many studies of this transition layer have been done but the characterization methods used are not direct measures of the atomic structure at the heterointerface. In this study, we investigated the abruptness and thickness of the InGaP-on-GaAs transition layers by field-emission Auger electron spectroscopy, by which a depth profile with a resolution of abruptness of 30 angstrom or below can be obtained. The group V switching position relative to that of In goes deeper into the GaAs with increasing PH3 Supply, suggesting an initial, quick replacement of As atoms with P atoms followed by a slow P diffusion into the bulk GaAs. Changes of abruptness of the As or P profiles at the heterointerface with varying PH3 supply on the GaAs surface are not observed. Furthermore, we evaluated the effect of the GaAsP-like transition layers on the turn-on voltage of an InGaP emitter HBT. A linear relationship is shown between the shift of the group V switching position and the HBT turn-on voltage, which is consistent with the assumption that current flow decreases at the transition layer. Calculated difference of conduction band energy between InGaP and the transition layer is 0.15 eV for the sample with ordered InGaP and 0.04 eV for disordered InGaP, is consistent with the difference of the band gap energies between ordered and disordered InGaP. Calculated P compositions are 0.52 and 0.35, respectively. (c) 2006 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jcrysgro.2006.10.119

  • Non-linear kinetic analysis on GaAs selective area MOVPE combined with macro-scale analysis to extract major reaction mechanism 査読

    Haizheng Song, Ik-Tae Im, Masakazu Sugiyama, Yoshiaki Nakano, Yukihiro Shimogaki

    JOURNAL OF CRYSTAL GROWTH   298   32 - 36   2007年1月 (   ISSN:0022-0248 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:ELSEVIER SCIENCE BV  

    Numerical simulation on growth rate non-uniformity of selective area growth (SAG) in sub-millimeter scale can extract real surface kinetics in metal organic vapor phase epitaxy (MOVPE) process, which is normally hindered by mass transport rate of film precursors. SAG analysis with non-linear surface kinetics is introduced for the first time to analyze group-III precursor partial pressure dependency of GaAs-MOVPE. Important kinetic parameters, surface reaction rate constant, adsorption equilibrium constant and surface coverage, have been extracted and examined as various substrate misorientation angles. Such non-linear kinetic analysis using SAG (micro analysis) is combined with computational fluid dynamics (CFD) reactor-scale analysis (macro analysis) to elucidate the main reaction mechanism of GaAs-MOVPE process in the whole reactor. The reaction mechanism is different in different parts of the reactor. That means, we should use various kinetic parameters to preciously predict the growth procedure in the whole large-scale reactor. (c) 2006 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jcrysgro.2006.10.230

  • Reactor-scale uniformity of selective-area performance in InGaAsP system 査読

    Ryusuke Onitsuka, Tomonari Shioda, Haizheng Song, Masakazu Sugiyama, Yukihiro Shimogaki, Yoshiaki Nakano

    JOURNAL OF CRYSTAL GROWTH   298   59 - 63   2007年1月 (   ISSN:0022-0248 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:ELSEVIER SCIENCE BV  

    Selective-area metal organic vapor phase epitaxy (SA-MOVPE) of InGaAsP-related semiconductors is one of the most important fabrication techniques for monolithically integrated optical devices. However, it has not been clarified how much the mask effect depends on the position of a wafer in a MOVPE reactor. Therefore, the uniformity of the mask effect in a reactor was investigated experimentally coupled with the simulation in both reactor scale and micrometer scale. As for the reactor-scale distributions of an InGaAsP layer, the measured profiles of the growth rate and composition were well-reproduced by the simulation that assumed the adsorption and the desorption of As and P species. As for the micro-scale distribution in the selective-area growth, the modulations of photoluminescence (PL) wavelength due to masks were dependent on the position of the substrate in the reactor. The reason was assumed to be that the surface reaction rate constant of a precursor had the distribution in the reactor, due to the concentration distribution of both precursors and reaction products. (c) 2006 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jcrysgro.2006.10.040

  • Waveguide-Based 1.5 µm Optical Isolator Based on Magneto-Optic Effect in Ferromagnetic MnAs 査読

    Tomohiro Amemiya, Hiromasa Shimizu, Pham Nam Hai, Masafumi Yokoyama, Masaaki Tanaka, Yoshiaki Nakano

    Japanese Journal of Applied Physics   46 ( 1 )   205   2007年1月 (   ISSN:0021-4922 )

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:Japan Society of Applied Physics  

    DOI: 10.1143/JJAP.46.205

    DOI: 10.1143/jjap.46.205

  • Vapor phase diffusion and surface diffusion combined model for InGaAsP selective area metal-organic vapor phase epitaxy 査読

    T. Shioda, M. Sugiyama, Y. Shimogaki, Y. Nakano

    JOURNAL OF CRYSTAL GROWTH   298   37 - 40   2007年1月 (   ISSN:0022-0248 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:ELSEVIER SCIENCE BV  

    The growth rate profiles adjacent to selective area masks were studied for InP, InGaAs and InGaAsP by metal-organic vapor phase epitaxy. Time-proportional growth rate increments were found for InP growth at the mask edge. The growth rate of InP at the edge saturated after the length of (111)B plane became larger than 1.4 mu m, which corresponds to the migration length of an In precursor on this plane. The time evolution of the IrP layer at the mask edge was modeled as (1) precursors stuck on (111)B plane migrate to (100) plane and (2) they diffuse on that plane as well as get incorporated there. The simulated thickness of InP layers at the mask edge showed excellent agreement with experimental data. In the case of InGaAs and InGaAsP, there were no indications of surface diffusion in the thickness profile. However, the distribution of the photoluminescence wavelength of InGaAsP layers suggested that the surface diffusion of Ga precursor on the (10 0) plane of the InGaAsP layer existed with the diffusion length of as long as 8 mu m. (c) 2006 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jcrysgro.2006.10.004

  • 80Gb/s multi-wavelength optical packet switching using PLZT switch 査読

    Katsuya Watabe, Tetsuya Saito, Nobutaka Matsumoto, Takuo Tanemura, Hideaki Imaizmui, Abdullah Al Amin, Mitsuru Takenaka, Yoshiaki Nakano

    OPTICAL NETWORK DESIGN AND MODELING, PROCEEDINGS   4534   11 - +   2007年 (   ISSN:0302-9743 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:SPRINGER-VERLAG BERLIN  

    This paper proposes 80Gb/s multi-wavelength optical packet switching(OPS) using a PLZT switch. The Multi-wavelength OPS Network can achieve low implementation costs compared to existing OPS networks in which the number of wavelengths is large. In this network, the header is processed separately from the payload. The payload is divided into multiple segments. Each segment is then encoded into different wavelengths. After assignment of wavelength to each payload segment, payload segments are multiplexed into an optical signal which is then transmitted through an optical fiber. Therefore, the number of components required for intermediate node functionality stays the same for the number of wavelengths used for payload transmission. This paper shows a fundamental experiment of the Multi-wavelength OPS network using a PLZT switch. PLZT switch provide a fast optical switching with low noise, independent polarization, and low drive voltage. In this paper, we describe the detail of the experiments and results.

    DOI: 10.1007/978-3-540-72731-6_2

  • Dependence of self-pulsation characteristics of multisection index-coupled distributed feedback lasers on section lengths 査読

    Sang-Taek Kim, Tae-Young Kim, Boo-Gyoun Kim, Yoshiaki Nakano

    Journal of the Optical Society of America B: Optical Physics   24 ( 3 )   477 - 483   2007年 (   ISSN:0740-3224 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Optical Society of American (OSA)  

    We investigate the effect of section lengths on the self-pulsation (SP) characteristics of a multisection index-coupled distributed feedback (DFB) laser that is composed of two spectrally detuned DFB sections and a phasetuning section between them. Compound-cavity modes in multisection DFB lasers can be obtained by the concept of Fabry-Perot cavity modes. The simple equation for a CS number, which represents the number of compound-cavity modes within the stop-band width of a DFB section, is derived. By using the CS number, we were able to predict the SP characteristics such as abrupt changes of SP frequency due to mode hopping. Stable SP characteristics without abrupt changes of SP frequency for the variation of the spectral detuning and the phase shift in a phase-tuning section were obtained in cases with small CS numbers, which can be obtained by adjustment of section lengths. © 2007 Optical Society of America.

    DOI: 10.1364/JOSAB.24.000477

  • Design and fabrication of integrated 1 x 5 optical phased array switch on InP 査読

    T. Tanemura, M. Takenaka, A. Abdullah, K. Takeda, T. Shioda, M. Sugiyama, Y. Nakano

    2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2   780 - +   2007年 (   ISSN:1092-8081 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    An integrated semiconductor 1x5 optical phased-array switch is designed and demonstrated for the first time. Using the carrier-induced refractive index change in the InGaAsP bulk layer, we achieve successful switching to five output ports with less than 60-mA current injection.

  • Design and fabrication of photonic MEMS waveguide modulators 査読

    Akio Higo, Hiroyuki Fujita, Yoshiaki Nakano, Hiroshi Toshiyoshi

    2007 IEEE/LEOS INTERNATIONAL CONFERENCE ON OPTICAL MEMS AND NANOPHOTONICS   173 - +   2007年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    We report the design and fabrication process of photonic MEMS actuators for optical attenuators integrated with a silicon photonic wire waveguide. This paper presents design and theoretical analysis of the silicon optical waveguide modulator with an electrostatic micromechanical structure actuated in the evanescent range. We observed a 100-nm MEMS displacement on a 5-um-wide and 50-um-long cantilever at a voltage of 20pp.

    DOI: 10.1109/OMEMS.2007.4373896

  • Effects of Zn- and S-doping on kinetics of GaAs selective area MOVPE 査読

    Haizheng Song, Yunpeng Wang, Masakazu Sugiyama, Yoshiaki Nakano, Yukihiro Shimogaki

    2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS   319 - 322   2007年 (   ISSN:1092-8669 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    The effects of Zn- and S-doping on surface reaction kinetics of GaAs selective area MOVPE have been examined at 650 degrees C. The surface reaction rate constant of GaAs was extracted at various dopant input pressure and different mask width. The dopant atomic concentration in the epilayer was measured as functions of growth rate and mask pattern. These results show strong dependency on the doping behavior and thermodynamics.

  • Design of strain and bandgap profiles of InGaAsP fabricated by selective area metal-organic vapor phase epitaxy for polarization independent operation 査読

    Tomonari Shioda, Masakazu Sugiyama, Yoshiaki Nakano

    2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS   43 - 46   2007年 (   ISSN:1092-8669 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    We designed the strain and bandgap distribution of tensile InGaAs/InGaAsP grown by selective-area MOVPE using vapor-phase diffusion model. A design principle of selective-area growth for integrating polarization independent components is discussed.

  • Experimental validation of deflection routing in a 3-node optical burst core network with 40Gb/s edge nodes 査読

    A. Al Amin, M. Takenaka, T. Tanemura, K. Shimizu, R. Inohara, K. Nishimura, M. Usami, Y. Takita, Y. Kai, H. Onaka, H. Uetsuka, Y. Nakano

    2007 33rd European Conference and Exhibition of Optical Communication, ECOC 2007   2007年

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    掲載種別:研究論文(国際会議プロシーディングス)  

    We demonstrate deflection routing for random burst collision in a 3-node optical burst switching network testbed. Using a Ether-frame capable burst edge node, layer 2 characterization was performed, with near-theoretical low frame error at 40Gb/s.

  • Intersubband transition of AlN/GaN quantum wells in optimized AlN-based waveguide structure 査読

    T. Shimizu, C. Kumtornkittikul, N. Iizuka, M. Sugiyama, Y. Nakano

    Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series   2007年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    We achieved low-power saturation of intersubband absorption at 1.5 μm with AlN-based AlN/GaN quantum wells. By optimizing the etching condition of waveguides, the saturation energy was reduced by a factor of 3. ©2007 Optical Society of America.

    DOI: 10.1109/QELS.2007.4431094

  • Multi-hop transmission with wavelength conversion for collision resolution in PLZT matrix switch-based optical burst switching node prototype 査読

    A. Al Amin, K. Shimizu, M. Takenaka, R. Inohara, K. Nishimura, M. Usami, Y. Takita, Y. Kai, H. Onaka, T. Miyahara, Y. Miyazaki, T. Hatta, K. Motoshima, M. Ono, Y. Kondo, J. Kageyama, N. Sugimoto, Y. Urino, H. Uetsuka, Y. Nakano

    2007 Photonics in Switching, PS   121 - 122   2007年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    Multi-hop cascadibility of a PLZT matrix switch-based optical burst switching node prototype Is presented. Using a 50km recirculating loop setup and a 4×4 matrix switch, more than 10hop transparency at 10Gb/s was achieved. Hop-by-hop wavelength conversion for contention resolution and signal reshaping effect was confirmed. © 2007 IEEE.

    DOI: 10.1109/PS.2007.4300774

  • NEDO project on photonic network technologies - Development of an OBS node prototype and key devices 査読

    Yoshiaki Nakano

    OFC/NFOEC 2007 - Optical Fiber Communication and the National Fiber Optic Engineers Conference 2007   2007年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    We present a summary of the optical burst switching (OBS) node prototype and major components achieved in NEDO-funded Photonic Network Project. Advanced devices such as matrix switch, wavelength converter and tunable lasers are reported. © 2006 Optical Society of America.

    DOI: 10.1109/OFC.2007.4348647

  • Non-linear surface reaction kinetics of GaAs MOVPE explored by selective area growth 査読

    Haizheng Song, Masakazu Sugiyama, Yoshiaki Nakano, Yukihiro Shimogaki

    ECS Transactions   2 ( 7 )   145 - 156   2007年 (   ISSN:1938-5862 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    Two-dimensional or three-dimensional numerical simulation on growth rate non-uniformity of selective area metalorganic vapor phase epitaxy (SA-MOVPE) in sub-millimeter scale can extract real surface kinetics, which is normally hindered by mass transport rate of film precursors. Non-linear surface kinetics is introduced to analyse group-III precursor concentration dependency of SA-MOVPE for the first time and surface reaction rate constant (k sn) of adsorbed species and adsorption equilibrium constant (K) are extracted from GaAs-MOVPE at 575 °C The effect of misorientation angle (ø) of GaAs (100) substrate on these kinetic parameters is examined. It is found that ksn is about 3.4 × 10-5 mol/m2/s independent of ø, whereas K is 6.9-12 × 10-5 m3/mol dependent on ø. The obtained value of ksn can be converted to lifetime of adsorbed species on GaAs surface and it is 0.3 sec. This is mostly the same with gas-phase decomposition rate of trimethylgallium and supports the accuracy of our non-linear kinetic analysis. copyright The Electrochemical Society.

    DOI: 10.1149/1.2408910

  • Nonlinear kinetics of GaAs MOVPE examined by selective area growth technique 査読

    Haizheng Song, Masakazu Sugiyama, Yoshiaki Nakano, Yukihiro Shimogaki

    JOURNAL OF THE ELECTROCHEMICAL SOCIETY   154 ( 2 )   H91 - H96   2007年 (   ISSN:0013-4651 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:ELECTROCHEMICAL SOC INC  

    Two-dimensional or three-dimensional numerical simulation on growth rate nonuniformity of selective area metallorganic vapor phase epitaxy (SA-MOVPE) in sub-millimeter scale can extract real surface kinetics, which is normally hindered by mass transport rate of film precursors. Nonlinear surface kinetics is introduced to analyze group-III precursor concentration dependency of SA-MOVPE for the first time and surface reaction rate constant (k(s)(n)) of adsorbed species and adsorption equilibrium constant (K) are extracted from GaAs-MOVPE at 575 degrees C. The effect of misorientation angle (phi) of GaAs(100) substrate on these kinetic parameters was examined. It was found that k(s)(n) is about 3.4 x 10(-5) mol m(-2) s(-1) independent of phi, whereas K ranged from 6.9 to 12 x 10(5) m(3) mol(-1) dependent on phi. The obtained value of k(s)(n) can be converted to lifetime of adsorbed species on GaAs surface and it is 0.3 s. This is mostly the same with gas-phase decomposition rate of trimethylgallium and supports the accuracy of our nonlinear kinetic analysis. (c) 2006 The Electrochemical Society.

    DOI: 10.1149/1.2400603

  • MMI-BLD optical flip-flop for all-optical packet switching 査読

    M. Takenaka, K. Takeda, Y. Kanema, M. Raburn, T. Miyahara, H. Uetsuka, Y. Nakano

    2007 Photonics in Switching, PS   13 - 14   2007年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    We have demonstrated all-optical packet switching, in which an MMI-BLD optical flip-flop worked as a label memory. The optical flip-flop allowed self-routing of multiple-wavelength packets with 338-ps switching time and 14-dBon-off ratio. ©2007 IEEE.

    DOI: 10.1109/PS.2007.4300720

  • Simulation of static optical XPM in active MMI couplers 査読

    Salah Ibrahim, Xueliang Song, Masakazu Sugiyama, Yoshiaki Nakano

    NUSOD '07: PROCEEDINGS OF THE 7TH INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES   95 - +   2007年 (   ISSN:2158-3234 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    Based on the FD-BPM and including the distribution of photon density, carrier density, and refractive index, a simulation code is used to analyze the static performance of active MMI couplers in the presence of two different optical signals. To examine the feasibility of a novel all-optical witch based on active MMI; the code is mainly used to evaluate the amount of phase change resulting in the output of one optical signal by varying the intensity of the other at different injected carrier density.

  • MMI bistable laser diode optical flip-flops for all-optical packet switching networks 査読

    M. Takenaka, K. Takeda, Y. Kanema, M. Raburn, T. Miyahara, H. Uetsuka, Y. Nakano

    Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS   652 - 653   2007年 (   ISSN:1092-8081 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    An MMI bistable laser diode optical flip-flop has been developed for all-optical packet switching networks. All-optical switching of 320 Gb/s packets has been successfully demonstrated by an optical label memory based on the optical flip-flop. ©2007 IEEE.

    DOI: 10.1109/LEOS.2007.4382575

  • Single mode operation of 1.5 μm TM-mode waveguide optical isolators based on the nonreciprocal-loss phenomenon 査読

    T. Amemiya, H. Shimizu, M. Yokoyama, P. N. Hai, M. Tanaka, Y. Nakano

    Conference on Lasers and Electro-Optics, 2007, CLEO 2007   2007年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    We developed a 1.5-μm-band, TM-mode waveguide optical isolator consisting of a semiconductor ridge waveguide combined with a ferromagnetic MnAs layer. The device shows single mode operation with an isolation ratio of 7.2 dB/mm at 1.53-1.55 μm wavelength. © 2007 Optical Society of America.

    DOI: 10.1109/CLEO.2007.4452994

  • Waveguide optical isolators for photonic integrated circuits 査読

    Yoshiaki Nakano

    2007 International Nano-Optelectronics Workshop, iNOW   10 - 11   2007年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    A review is given on a new class of non-reciprocal photonic devices, namely, the semiconductor waveguide optical isolator, by illustrating its operation principle, fabrication, isolation characteristics, as well as its monolithic integration with a distributed feedback laser diode on an InP substrate.. © 2007 IEEE.

    DOI: 10.1109/INOW.2007.4302841

  • Four channel DFB laser array with integrated combiner for 1.55µm CWDM systems by MOVPE selective area growth. 査読

    Jesse Darja, Melvin J. Chan, Masakazu Sugiyama, Yoshiaki Nakano

    IEICE Electronic Express   3 ( 24 )   522 - 528   2006年12月 (   ISSN:1349-2543 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1587/elex.3.522

  • Optical burst switching with burst collision resolution using a fast 4X4 PLZT switch 査読

    Abdullah Al Amin, Katsuhiro Shimizu, Mitsuru Takenaka, Ryo Inohara, Kohsuke Nishimura, Yukio Horiuchi, Masashi Usami, Yutaka Takita, Yutaka Kai, Yasuhiko Aoki, Hiroshi Onaka, Toshiharu Miyahara, Tatsuo Hatta, Kuniaki Motoshima, Yoshiaki Nakano

    IEICE ELECTRONICS EXPRESS   3 ( 23 )   504 - 508   2006年12月 (   ISSN:1349-2543 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG  

    An optical burst switching (OBS) node with a fast 4x4 PLZT ( Lead Lanthanum Zirconate Titanate) optical matrix switch and an electronic label processor is presented. Successful collision detection and collision resolution is demonstrated by two methods: deflection routing and shared wavelength conversion. Error-free performance at 10 Gbps payload was achieved for both. Switching speed of 3.5 mu s was achieved, demonstrating small data granularity in the order of 10 mu s.

    DOI: 10.1587/elex.3.504

  • Novel gas-switching sequence using group-III pre-flow (GIIIP) method for fabrication of InGaP on GaAs hetero-interface by MOVPE 査読

    T. Nakano, Y. Nakano, Y. Shimogaki

    JOURNAL OF CRYSTAL GROWTH   296 ( 2 )   179 - 185   2006年11月 (   ISSN:0022-0248 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:ELSEVIER SCIENCE BV  

    InGaP/GaAs is an attractive material system to realize ultra fast electronic devices and optical devices. Fabrication of a monolayer abrupt hetero-interface by metal organic vapor phase epitaxy (MOVPE) is difficult, however, due to the rapid As/P exchange on the growth surface. Here, adsorption/desorption kinetics of group-V atoms on GaAs surface during a gas-switching sequence to form InGaP/GaAs structure was studied by using in situ kinetic ellipsometry. The in situ monitoring of the GaAs dielectric constant revealed that P diffuses easily and quickly into GaAs and that excess As adsorbed on the GaAs surface in MOVPE is difficult to desorb during the gas-switching sequence. Based on these results, we developed a novel gas-switching sequence in which an additional TMGa supply and a group-III pre-flow (GIIIP) were introduced for the first time. By optimizing this GIIIP sequence (i.e., by controlling the additional TMGa supply time), we successfully fabricated an abrupt interface of InGaP on GaAs. The effectiveness of this sequence was confirmed based on photo-luminescence measurements. (c) 2006 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jcrysgro.2006.08.029

  • All-optical switching of 40 Gb/s packets by MMI-BLD optical label memory 査読

    M. Takenaka, K. Takeda, Y. Kanema, Y. Nakano

    OPTICS EXPRESS   14 ( 22 )   10785 - 10789   2006年10月 (   ISSN:1094-4087 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:OPTICAL SOC AMER  

    We demonstrated all-optical label storing and switching for 40 Gb/s optical packets by using all-optical signal processing of multimode interference bistable laser diode optical flip-flops. The stored optical labels in the optical flip-flop controlled an all-optical switch to forward the injected optical packets. The 40 Gb/s optical packets were successfully switched in the all-optical scheme with 11-dB extinction ratio. Error-free operation for the output packets from the switch was also obtained with 1.3-dB power penalty. The presented all-optical packet switching has the advantages of ultrafast switching and transparency of data rate and format, suitable for the future optical networks. (c) 2006 Optical Society of America.

  • All-optical packet switching and label buffering by MMI-BLD optical flip-flop 査読

    Mitsuru Takenaka, Koji Takeda, Yoshiaki Nakano

    IEICE ELECTRONICS EXPRESS   3 ( 15 )   368 - 372   2006年8月 (   ISSN:1349-2543 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG  

    All-optical packet switching and label buffering have been demonstrated using multimode interference bistable laser diode optical flip-flops and all-optical Mach-Zehnder interferometer switches. The optical flip-flop buffered the injected optical label for the one packet duration and drove the all-optical switch through cross-phase modulation to switch the optical packet. Error-free operation for output 10-Gb/s optical packets from the switch was obtained with negligible power penalty. The presented packet switching has potential of ultra-fast switching and transparency of data rate and format, and will be useful in the future optical packet switching networks.

    DOI: 10.1587/elex.3.368

  • Integrable multimode interference distributed Bragg reflector laser all-optical flip-flops 査読

    Raburn Maura, Takenaka Mitsuru, Takeda Koji, Song Xueliang, Barton Jonathon S, Nakano Yoshiaki

    IEEE PHOTONICS TECHNOLOGY LETTERS   18 ( 13-16 )   1421 - 1423   2006年7月 (   ISSN:1041-1135 )

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    掲載種別:研究論文(学術雑誌)  

    DOI: 10.1109/LPT.2006.877569

  • Monolithically integrated Mach-Zehnder interferometer all-optical switches by selective area MOVPE 査読

    Xueliang Song, Naoki Futakuchi, Daisuke Miyashita, Foo Cheong Yit, Yoshiaki Nakano

    IEICE TRANSACTIONS ON ELECTRONICS   E89C ( 7 )   1068 - 1079   2006年7月 (   ISSN:0916-8524   eISSN:1745-1353 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG  

    We achieved first dynamic all-optical signal processing with a bandgap-engineered MZI SOA all-optical switch. The wide-gap Selective Area Growth (SAG) technique was used to provide multi-bandgap materials with a single step epitaxy. The maximum photoluminescence (PL) peak shift obtained between the active region and the passive region was 192nm. The static current switching with the fabricated switch indicated a large carrier induced refractive index change; up to 14 pi phase shift was obtained with 60 mA injection in the SOA. The carrier recovery time of the SOA for obtaining a phase shift of pi was estimated to be 250-300 ps. A clear eye pattern was obtained in 2.5 Gbps all-optical wavelength conversion. This is the first all-optical wavelength conversion demonstration with a bandgap-engineered PIC with either selective area growth or quantum-well intermixing techniques.

    DOI: 10.1093/ietele/e89-c.7.1068

  • Semiconductor waveguide optical isolator based on nonreciprocal loss induced by ferromagnetic MnAs 査読

    T. Amemiya, H. Shimizu, Y. Nakano, P. N. Hai, M. Yokoyama, M. Tanaka

    APPLIED PHYSICS LETTERS   89 ( 2 )   2006年7月 (   ISSN:0003-6951 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:AMER INST PHYSICS  

    We fabricated TM mode InGaAlAs/InP active waveguide optical isolators based on the magnetically induced nonreciprocal loss. We used epitaxially grown MnAs thin films as ferromagnetic electrodes of the semiconductor active waveguide optical isolators. We demonstrated TM mode nonreciprocal propagation (8.8 dB/mm) at 1540 nm with an excellent ferromagnetic electrode contact, which has greater semiconductor active waveguide optical isolator performance than that of our previously reported devices with Ni/Fe polycrystalline electrodes. (c) 2006 American Institute of Physics.

    DOI: 10.1063/1.2220016

  • GaN/AlN multiple quantum wells grown on GaN-AlN waveguide structure by metalorganic vapor-phase epitaxy 査読

    Chaiyasit Kumtornkittikul, Masakazu Sugiyama, Yoshiaki Nakano

    Journal of Electronic Materials   35 ( 4 )   744 - 749   2006年4月 (   ISSN:0361-5235 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    High-optical-confinement waveguide structure based on nitride semiconductors is proposed and demonstrated for the first time with metal organic vapor-phase epitaxy. The waveguide structure composed of 1-μm-thick AlN cladding layer, 2-μm-thick GaN guiding layer, and 40 periods of GaN/AlN multiple quantum wells (MQWs) was grown using optimized growth conditions for each layer. For improved material quality, the two-step growth technique using low-temperature AlN and GaN nucleation layers was utilized to reduce the stress induced by lattice mismatch between each layer. The high-optical-confinement structure could therefore be grown with high quality, leading to a successful observation of inter-sub-band absorption in GaN/AlN MQWs. The inter-sub-band absorption wavelength observed in such structure is in good agreement with that of MQWs grown on GaN layer, showing that the proposed waveguide structure can be used as a standard structure for optical devices based on inter-sub-band absorption.

    DOI: 10.1007/s11664-006-0132-y

  • Role of surface diffusion during selective area MOVPE growth of InP 査読

    Noriaki Waki, Takayuki Nakano, Masakazu Sugiyma, Yoshiaki Nakano, Yukihiro Shimogaki

    Thin Solid Films   498 ( 1-2 )   163 - 166   2006年3月 (   ISSN:0040-6090 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    Selective Area Metalorganic Vapor Phase Epitaxy (SA-MOVPE) growth of compound semiconductor, such as In1-xGaxAs yP1-y, is an indispensable technology to realize one-step fabrication of monolithic optical integrated circuits (OEICs). In SA-MOVPE, the growth rate of unmasked region is enhanced, because un-reacted group III precursors on the mask region diffuse into the epitaxial growth region. This growth rate enhancement is mainly caused by the gas-phase diffusion of precursors, but the contribution of surface diffusion becomes larger as the unmasked stripe becomes narrower. Moreover, in the SA-MOVPE growth of InP, the abnormal growth near the mask edge and the formation of tear-drop-like hillocks, which is considered to be originated from surface diffusion, are observed. In this work, the role of surface diffusion during SA-MOVPE growth of InP was investigated by measuring the cross-sectional area of abnormal growth and surface roughness. By changing the growth temperature from 793 K to 883 K, the area of abnormal growth increased and took maxima at 823 K, and decreased again at higher temperature. The concentration of group III precursor enhanced the abnormal growth and the roughness. The concentration effect was larger than the first order, and its relation to the surface diffusion length was suggested. This information on surface diffusion during SA-MOVPE is a key factor for the precise control of SA-MOVPE growth.

    DOI: 10.1016/j.tsf.2005.07.069

  • Simulation and design of the emission wavelength of multiple quantum well structures fabricated by selective area metalorganic chemical vapor deposition 査読

    T Shioda, T Doi, A Al Amin, XL Song, M Sugiyama, Y Shimogaki, Y Nakano

    THIN SOLID FILMS   498 ( 1-2 )   174 - 178   2006年3月 (   ISSN:0040-6090 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:ELSEVIER SCIENCE SA  

    Selective area metalorganic chemical vapor deposition (SA-MOCVD) is effective for the monolithic integration of semiconductor optical devices. Using appropriate patterns Of SiO2 masks on a substrate, we can fabricate multiple quantum wells (MQWs) of In1-xGaxAsyP1-y, alloys with various emission wavelengths. Therefore, we can fabricate both passive elements and active components for different wavelengths on a substrate by a single growth. To make the best use of this SA-MOCVD process, we need a simulation tool that predicts the performance of the grown layer for a given mask pattern. We constructed a simulation that predicts the emission wavelength of MQW structures grown by SA-MOCVD. The simulation took into account the gas-phase diffusion of the precursors of In and Ga and their incorporation to the growth area. The rate parameters of these processes were extracted from the growth-rate profile in the SA-MOCVD of InP and GaAs. Based on these data, we simulated the photolummescence (PL) peak wavelength of (1) In1-xGaxAsyP1-y, bulk films and (2) MQWs consisting of these quaternary alloys. The simulated results agreed with experimental results, indicating the feasibility of computer-assisted design (CAD) of the mask patterns for SA-MOCVD. (c) 2005 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.tsf.2005.07.074

  • Control of abnormal edge growth in selective area MOVPE of InP 査読

    M Sugiyama, N Waki, Y Nobumori, H Song, T Nakano, T Arakawa, Y Nakano, Y Shimogaki

    JOURNAL OF CRYSTAL GROWTH   287 ( 2 )   668 - 672   2006年1月 (   ISSN:0022-0248 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:ELSEVIER SCIENCE BV  

    In selective-area MOVPE of InP, we often encounter an abnormally grown ridge near the mask edge accompanied by various facets. The effect of mask shape and growth conditions on the shape and cross-sectional area of the ridge was investigated. The cross-sectional area showed a parabolic increase with time. The direction of the stripe growth area had a significant effect on the edge growth. When the stripe was oriented to [100] or [010] direction, the cross-sectional area of the ridge showed a significant increase and was accompanied by a (110) facet, although the edge growth in other conditions was often accompanied by (111)(B) facets. A numerical simulation, incorporating the surface diffusion of a precursor, was introduced and the amount of the edge growth was reproduced. The effect of growth conditions on the cross-sectional area of the edge growth was interpreted in terms of the surface diffusion length of the precursor on both masks and growth areas. (c) 2005 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jcrysgro.2005.10.096

  • Effect of group V partial pressure on the kinetics of selective area MOVPE for GaAs on (100) exact and misoriented substrate 査読

    HZ Song, XL Song, M Sugiyama, Y Nakano, Y Shimogaki

    JOURNAL OF CRYSTAL GROWTH   287 ( 2 )   664 - 667   2006年1月 (   ISSN:0022-0248 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:ELSEVIER SCIENCE BV  

    Surface reaction kinetics of GaAs growth by metalorganic vapor phase epitaxy (MOVPE) was investigated by examining the growth rate non-uniformity of open area in selective area MOVPE. The surface reaction rate constant (k(s)) could be extracted using this technique and the effect of tertiarybutylarsine (TBAs) partial pressure (P-TBAs) on k(s) was examined on GaAs (100) exact and misoriented substrates in the temperature range 550-700 degrees C. The activation energy of k(s) was significantly dependent on the growth temperature range and on P-TBAs. This is due to the change of the probable reactant formed by the gas-phase reaction and also due to the GaAs (10 0) surface reconstruction which depends on temperature and P-TBAs. At 575 and 700 degrees C, the relation between k(s) and P-TBAs was examined at a constant trimethylgallium (TMGa) partial pressure or V/III ratio, respectively. The desorption of As from the GaAs surface should be taken into account at lower P-TBAs. At higher P-TBAs, the surface reconstruction state, the potential reaction between As species and As sites on the surface and the organic by-product from TBAs might be responsible for the reduction of k(s) value. (c) 2005 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jcrysgro.2005.10.091

  • An Autonomous Optical Label Switching Node and Analysis of Its Node Cascadibility 査読

    Abdullah Al Amin, Katsuhiro Shimizu, Mitsuru Takenaka, Kohsuke Nishimura, Ryo Inohara, Yukio Horiuchi, Masashi Usami, Yutaka Takita, Yutaka Kai, Yasuhiko Aoki, Hiroshi Onaka, Toshiharu Miyahara, Tatsuo Hatta, Kuniaki Motoshima, Yoshiaki Nakano

    2006 THE JOINT INTERNATIONAL CONFERENCE ON OPTICAL INTERNET (COIN) AND NEXT GENERATION NETWORK (NGNCON)   479 - +   2006年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    We present a new optical label switching node prototype. In-band label driven fast matrix switch and wavelength conversion capability enables dynamic forwarding and contention resolution of 10Gbps payload. Analysis shows cascadibility up to 10 nodes.

  • Single mode and dynamic all-optical flip-flop operation of multimode interference bistable laser diodes with distributed bragg reflectors 査読

    Koji Takeda, Xueliang Song, Mitsuru Takenaka, Maura Raburn, Jonathon Barton, Yoshiaki Nakano

    2006 European Conference on Optical Communications Proceedings, ECOC 2006   2006年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    All-optical flip-flop operation of Integrable MMI-BLD with DBRs was demonstrated in the wavelength range of 1540 to 1570 nm. Single-mode lasing with SMSR of 23 dB was achieved with switching time of around 400 ps.

    DOI: 10.1109/ECOC.2006.4800939

  • All-optical 10-Gbps packet switching by DBR-MMI-BLD all-optical flip-flop 査読

    Koji Takeda, Mitsuru Takenaka, Maura Raburn, Xueliang Song, Jonathon S. Barton, Yoshiaki Nakano

    Conference Digest - IEEE International Semiconductor Laser Conference   9 - 10   2006年 (   ISSN:0899-9406 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:Institute of Electrical and Electronics Engineers Inc.  

    All-optical packet switching has been demonstrated using DBR-MMI-BLD all-optical flip-flops. Single-mode losing flip-flop output switched 10-Gbps optical packets through cross-phase modulation in all-optical MZI switches. Error free operation has been achieved with 1.8-dB power penalty. © 2006 IEEE.

    DOI: 10.1109/islc.2006.1708060

  • DBR laser fabricated by wide-stripe selective area MOVPE and mass transport for monolithic integration 査読

    Jesse Darja, Masakazu Sugiyama, Yoshiaki Nakano

    2006 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS CONFERENCE PROCEEDINGS   425 - +   2006年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    Wide-stripe MOVPE selective area growth and InAsP mass transport on V-grooves can be used to fabricate distributed Bragg reflector type laser in a single growth step. This method can be applied for monolithic integration of single node laser diodes with passive/active components.

  • Effect of surface misorientation on the kinetics of GaAs MOVPE examined using selective area growth 査読

    HZ Song, XL Song, M Sugiyama, Y Nakano, Y Shimogaki

    ELECTROCHEMICAL AND SOLID STATE LETTERS   9 ( 3 )   G104 - G106   2006年 (   ISSN:1099-0062 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:ELECTROCHEMICAL SOC INC  

    The kinetics of Ga species during metallorganic vapor phase epitaxy (MOVPE) of GaAs was examined by analyzing growth rate profiles of selective area MOVPE. The effect of surface misorientation of GaAs (100) substrates was evaluated using the selective area growth technique. Results showed that the higher misorientation angle resulted in higher surface reaction rate constant (k(s)). The temperature dependency of ks was examined and revealed that below 625 degrees C the activation energy (E-a) ranged from 75.7 to 87.9 kJ/mol depending on the substrate orientation. Above 625 degrees C, Ea decreased to less than 4 kJ/mol, possibly due to differences in surface structures and/or gas-phase species (c) 2006 The Electrochemical Society.

    DOI: 10.1149/1.2166512

  • Fabrication of InP/InGaAsP multi-mode interference distributed Bragg reflector laser all-optical flip-flops 査読

    Raburn Maura, Takenaka Mitsuru, Takeda Koji, Song Xueliang, Barton Jonathon S, Nakano Yoshiaki

    2006 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS CONFERENCE PROCEEDINGS   56 - +   2006年

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    掲載種別:研究論文(学術雑誌)  

    DOI: 10.1109/ICIPRM.2006.1634110

  • High-speed gain control for EDWA in optical burst switching node employing wavelength converters 査読

    Katsuhiro Shimizu, Abdullah Al Amin, Shunsuke Tanaka, Mitsuru Takenaka, Toshiharu Miyahara, Tatsuo Hatta, Kuniaki Motoshima, Motoshi Ono, Yuki Kondo, Naoki Sugimoto, Ichiro Ogura, Yoshiaki Nakano

    Optics InfoBase Conference Papers   2006年 (   ISSN:2162-2701 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:Optical Society of America (OSA)  

    We have experimentally confirmed that a high-speed gain-control scheme for Er-doped bismuthate waveguide amplifiers effectively reduces gain excursion in burst signal amplification, resulting in error free wavelength conversion in burst optical network nodes. © 2006 Optical Society of America.

    DOI: 10.1364/oaa.2006.otua4

  • Epitaxy and devices for InP digital photonic integrated circuits 査読

    Yoshiaki Nakano

    2006 IEEE Nanotechnology Materials and Devices Conference, NMDC   1   126 - 127   2006年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    The author's group has been trying to establish fundamental technologies necessary for "digital photonics," by realizing optically-controlled digital photonic devices and circuits based on artificial optical properties of semiconductors, including digital wavelength converters, optical 3R repeaters, optical logic gates, optical dynamic memories, and integrated optical isolators. In this paper, we introduce two examples of such semiconductor photonic devices developed recently in our laboratory as well as a novel epitaxial technologies for fabricating such devices, namely, an SOA/ phase-shifter-integrated MZI all-optical switch circuit and an all-optical flip-flop for optical packet switching.

    DOI: 10.1109/NMDC.2006.4388714

  • Label-based path switching and error-free forwarding in a prototype optical burst switching node using a fast 4x4 optical switch and shared wavelength conversion 査読

    Abdullah Al Amin, Katsuhiro Shimizu, Mitsuru Takenaka, Ryo Inohara, Kohsuke Nishimura, Yukio Horiuchi, Masashi Usami, Yutaka Takita, Yutaka Kai, Yasuhiko Aoki, Hiroshi Onaka, Toshiharu Miyahara, Tatsuo Hatta, Kuniaki Motoshima, Yoshiaki Nakano

    2006 OPTICAL FIBER COMMUNICATION CONFERENCE/NATIONAL FIBER OPTIC ENGINEERS CONFERENCE, VOLS 1-6   2627 - +   2006年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:OPTICAL SOC AMERICA  

    We demonstrate for the first time optical burst switching using fast and scalable EO switch and a shared wavelength converter for contention resolution. 3.5 mu s label routing of variable-length bursts and error-free operation was achieved at 10Gbps payload. (C)2005 Optical Society of America.

  • Intersubband transition device using AIN waveguide with GaN/AIN quantum wells 査読

    中野 義昭

    Technical Digest, Conference on Lasers and Electro-Optics (CLEO 2006) CWD4   2006年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1109/CLEO.2006.4628352

  • Monolithically integrated four-channel DFB laser array by MOVPE selective area growth for 1.5 mu m CVMM systems 査読

    Jesse Darja, Melvin J. Chan, Masakazu Sugiyama, Yoshiaki Nakano

    2006 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2   655 - +   2006年 (   ISSN:1092-8081 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    Integrated InGaAsP DFB laser array for 1.5 mu m coarse wavelength division multiplexing has been fabricated by MOVPE selective area growth. An integrated MMI coupler is used to multiplex the laser outputs to a single output waveguide.

  • Optical burst switching node with sub-millisecond granularity equipped with agile tunable wavelength converter and waveguide amplifier 査読

    R. Inohara, K. Nishimura, Y. Horiuchi, M. Usami, A. Al Amin, M. Takenaka, K. Shimizu, Y. Nakano, T. Kagimoto, T. Kurobe, A. Kasukawa, H. Arimoto, S. Tsuji, Y. Kondo, M. Ono, J. Kageyama, N. Sugimoto, I. Ogura, T. Hatta, H. Onaka

    2006 European Conference on Optical Communications Proceedings, ECOC 2006   2006年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    An optical switching node with sub-millisecond granularity is demonstrated. The node is equipped with shared wavelength converter for contention resolution with microsecond tuning speed and compact gain block for loss compensation based on erbium-doped waveguide.

    DOI: 10.1109/ECOC.2006.4800926

  • Monolithically Integrable Semiconductor Active Waveguide Optical Isolators 査読

    Shimizu H., Amemiya T., Tanaka M., Nakano Y.

    日本応用磁気学会誌   30 ( 6 )   624 - 629   2006年 (   ISSN:0285-0192 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:The Magnetics Society of Japan  

    We have proposed, simulated, fabricated and experimentally demonstrated monolithically integrable semiconductor active waveguide optical isolators based on the nonreciprocal loss at an optical telecommunication wavelength range of 1530-1560nm. The semiconductor active waveguide optical isolators are composed of semiconductor optical amplifier (SOA) waveguides and ferromagnetic metals. In transverse electric (TE) mode semiconductor active waveguide optical isolators composed of InGaAsP SOA waveguides and Fe thin films, we demonstrated 14.7dB/mm optical isolation at the wavelength of 1550nm and 10dB/mm isolation over entire wavelength range of 1530-1560nm. In transverse magnetic (TM) mode semiconductor active waveguide optical isolators, we used epitaxially grown MnAs thin films as top ferromagnetic electrodes, and demonstrated stable electrode performance and 8.8dB/mm optical isolation. Based on these demonstrations, we can realize monolithic integration of optical isolators with edge-emitting semiconductor laser diodes and polarization insensitive semiconductor active optical isolators. We also discussed the problems and solutions of our semiconductor active waveguide optical isolators at present stage.

    DOI: 10.3379/jmsjmag.30.624

  • TM mode optical waveguide isolator with 8.8 dB/mm nonreciprocal propagation induced by ferromagnetic MnAs 査読

    T. Amemiya, H. Shimizu, Y. Nakano, P. N. Hai, M. Yokoyama, M. Tanaka

    2006 OPTICAL FIBER COMMUNICATION CONFERENCE/NATIONAL FIBER OPTIC ENGINEERS CONFERENCE, VOLS 1-6   2310 - +   2006年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:OPTICAL SOC AMERICA  

    A 1540 nm, TM mode waveguide isolator based on the nonreciprocal loss shift was developed. It consisted of a semiconductor waveguide with a ferromagnetic MnAs layer and showed an isolation ratio of 8.8 dB/mm. (C) 2006 Optical Society of America. http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=1636962

    DOI: 10.1109/ofc.2006.215931

  • Improved etched surface morphology in electron cyclotron resonance-reactive ion etching of GaN by cyclic injection of CH4/H2/Ar and O2 with constant Ar flow 査読

    Taro Arakawa, Yoshiki Awa, Tomoyoshi Ide, Nobuo Haneji, Kunio Tada, Masakazu Sugiyama, Hiromasa Shimzu, Yukihiro Shimogaki, Yoshiaki Nakano

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   44 ( 7 B )   5819 - 5823   2005年7月 (   ISSN:0021-4922 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    Electron cyclotron resonance reactive ion etching (ECR-RIE) conditions for GaN using CH4/H2/Ar are investigated. GaN can be etched even with continuous etching using CH4/H2/Ar when Ar gas of a higher flow rate is introduced, but only rough etched surfaces are obtained. A cyclic injection method using CH4/H2/Ar etching gas and O2 ashing with constant Ar flow is introduced for GaN etching for the first time, and a rather high etch rate and very smooth etched surfaces are successfully obtained. The cyclic injection of CH 4/H2 and O2 prevents deposition of carbon polymers by oxygen plasma, and constant Ar flow removes the surface oxidized layer formed during the O2 ashing by Ar+ ion etching. Under the optimized etching condition, an etch rate of 34nm/min and a good morphology of etched surfaces (rms of less than 1.0 nm) are obtained. © 2005 The Japan Society of Applied Physics.

    DOI: 10.1143/JJAP.44.5819

  • 28-ps switching window with a selective area MOVPE all-optical MZI switch 査読

    Xueliang Song, Naoki Futakuchi, Foo Cheong Yit, Zhenrui Zhang, Yoshiaki Nakano

    IEEE Photonics Technology Letters   17 ( 7 )   1480 - 1482   2005年7月 (   ISSN:1041-1135 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    The first dynamic all-optical switching of a bandgap-engineered Mach-Zehnder interferometer semiconductor optical amplifer all-optical switch was achieved. A 28-ps switching window was successfully confirmed. This is the first demonstration of a bandgap-engineered large-scale all-optical photonic integrated circuit with either selective-area-growth or quantum-well-intermixing techniques. © 2005 IEEE.

    DOI: 10.1109/LPT.2005.848402

  • Effects of thermal contact resistance on film growth rate in a horizontal MOCVD reactor 査読

    IT Im, NJ Choi, M Sugiyama, Y Nakano, Y Shimogaki, KS Kim

    JOURNAL OF MECHANICAL SCIENCE AND TECHNOLOGY   19 ( 6 )   1338 - 1346   2005年6月 (   ISSN:1738-494X )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:KOREAN SOC MECHANICAL ENGINEERS  

    Effects of thermal contact resistance between heater and susceptor, susceptor and graphite board in a MOCVD reactor on temperature distribution and film growth rate were analyzed. One-dimensional thermal resistance model considering thermal contact resistance and heat transfer area was made up at first to find the temperature drop at the surface of graphite board. This one-dimensional model predicted the temperature drop of 18K at the board surface. Temperature distribution of a reactor wall from the three-dimensional computational fluid dynamics analysis including the gap at the wafer position showed the temperature drop of 20K. Film growth rates of InP and GaAs were predicted using computational fluid dynamics technique with chemical reaction model. Temperature distribution from the three-dimensional heat transfer calculation was used as a thermal boundary condition to the film growth rate simulations. Temperature drop due to the thermal contact resistance affected to the GaAs film growth a little but not to the InP film growth.

  • All-optical flip-flop multimode interference bistable laser diode 査読

    Mitsuru Takenaka, Maura Raburn, Yoshiaki Nakano

    IEEE Photonics Technology Letters   17 ( 5 )   968 - 970   2005年5月 (   ISSN:1041-1135 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    All-optical flip-flop operation of multimode interference bistable laser diodes (MMI-BLDs) was experimentally demonstrated for the first time. The MMI-BLD was prepared with a conventional ridge waveguide laser diode fabrication procedure, suitable for photonic integrated circuits. Bistable switching via two-mode bistability was obtained with approximately 0-dBm input powers due to cross-gain saturation and the saturable absorbers. Bit-length conversion was successfully obtained with noninverted and inverted outputs. This device will be useful in future photonic systems requiring all-optical latching functions such as optical memory, self-routing, and further optical signal processing. © 2005 IEEE.

    DOI: 10.1109/LPT.2005.844322

  • A numerical study on heat transfer and film growth rate of InP and GaAs MOCVD process 査読

    IT Im, M Sugiyama, Y Shimogaki, Y Nakano

    JOURNAL OF CRYSTAL GROWTH   276 ( 3-4 )   431 - 438   2005年4月 (   ISSN:0022-0248 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:ELSEVIER SCIENCE BV  

    Film growth rate of InP and GaAs using TMIn, TMGa, TBAs and TBP in a horizontal reactor is numerically predicted and compared to the experimental results. Two different temperature boundary conditions are used for the film growth rate simulations. One is from two-dimensional heat transfer calculation at the mid-section of the reactor, whereas the other is from the full three-dimensional calculation. In the three-dimensional calculation, gas flow and heat transfer are analyzed for a full three-dimensional reactor including outer tube as well as the inner reactor parts to obtain exact thermal boundary conditions on the reactor walls. The film growth analyses results indicate that exact thermal boundary conditions are important to get precise film growth rate prediction since film deposition is mainly controlled by the temperature-dependent mass transport. The results also show that thermal diffusion plays an important role in the upstream region of the inner reactor. (c) 2005 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jcrysgro.2004.12.082

  • All-optical wavelength conversion with monolithically integrated Mach-Zehnder interferometer SOA switches by selective area MOVPE 査読

    Xueliang Song, Zhenrui Zhang, Foo Cheong Yit, Yoshiaki Nakano

    Proceedings of SPIE - The International Society for Optical Engineering   5624   9 - 18   2005年 (   ISSN:0277-786X )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    We achieved first dynamic all-optical wavelength conversion in bandgap-engineered MZI SOA all-optical switch. Clear eye-diagram of 2.5Gbps wavelength conversion was confirmed. This is the first wavelength conversion demonstration with a bandgap-engineered PIC with either selective-area-growth and quantum-well-intermixing techniques.

    DOI: 10.1117/12.574210

  • All-optical OTDM demultiplexing in a high-yield manufacturable MONOLITHIC 3-bandgap SOA-MZI switch by regrowth-free selective area MOVPE 査読

    Xueliang Song, Foo Cheong Yit, Haizheng Song, Masakazu Sugiyama, Yoshiaki Nakano

    IET Conference Publications   2005 ( 502 )   479 - 480   2005年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:Institution of Engineering and Technology  

    All-optical OTDM demultiplexing was achieved in a manufacturable MZI SOA switch. Three bandgaps were monolithically integrated with high-yield multi-bandgap selective-area-MOVPE. This is the first demonstration of dynamic all-optical signal processing at 80Gbps in bandgap-engineered devices.

    DOI: 10.1049/cp:20050569

  • All-optical OTDM DEMUX with monolithic SOA-MZI switch by regrowth-free selective area MOVPE 査読

    Xueliang Song, Foo Cheong Yit, Haizheng Song, Masakazu Sugiyama, Yoshiaki Nakano

    Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest   2005   424 - 425   2005年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    We achieved first all-optical OTDM DEMUX with regrowth-free selective area MOVPE. 40Gbps to 10Gbps DEMUX was confirmed with SOA-MZI switch. This is the first all-optical OTDM DEMUX with bandgap-engineered PIC, by either selective-area-growth or quantum-well-intermixing.

    DOI: 10.1109/CLEOPR.2005.1569464

  • 10Gb/s Wavelength conversion using polarization dependence of cross-phase modulation in an InGaAlAs multiple-quantum-well electroabsorption modulator 査読

    清水 大雅, 中野 義昭

    Technical Digest, the 10th Optoelectronics and Communications Conference (OECC 2005) 8E1-4   842 - 843   2005年

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    掲載種別:研究論文(学術雑誌)  

  • Effect of temperature and substrate misorientation on the surface reaction kinetics of selective area MOVPE 査読

    HZ Song, XL Song, M Sugiyama, Y Nakano, Y Shimogaki

    2005 International Conference on Indium Phosphide and Related Materials   468 - 471   2005年 (   ISSN:1092-8669 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    In order to design the selective-area metal-organic vapor phase epitaxy (MOVPE) processes, the surface reaction rate constant of a Ga-precursor was investigated as a function of temperature, substrate misorientation, and the partial pressures of precursors.

  • Dynamic switching and wavelength conversion in a monolithically integrated michelson-interferometric SOA all-optical switch by selective area MOVPE 査読

    Foo Cheong Yit, Xueliang Song, Haizheng Song, Zhenrui Zhang, Masakazu Sugiyama, Yoshiaki Nakano

    Conference Proceedings - International Conference on Indium Phosphide and Related Materials   2005   106 - 109   2005年 (   ISSN:1092-8669 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    We demonstrated first dynamic operation in first regrowth-free Michelson-Interferometric SOA all-optical switch. 20 ps switching window and 10 Gbps wavelength conversion was acheived. This switch by selective-area-MOVPE is the first Michelson-Interferometric type ever realised among all other bandgap-engineeering approaches. © 2005 IEEE.

    DOI: 10.1109/ICIPRM.2005.1517431

  • OPLEAF high density fiber array for minimized lateral device spacing optical ICs 査読

    Tadashi Sonobe, Noriyoshi Hiroi, Mitsuru Takenaka, Yoshiaki Nakano, Hiroyuki Fujita

    IET Conference Publications   2005 ( 502 )   557 - 558   2005年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:Institution of Engineering and Technology  

    We propose an OPtical LEAd Frame (OPLEAF) that serves as the interface between optical fibers and high density optical ICs. OPLEAF allows significant size reduction of optical ICs.

    DOI: 10.1049/cp:20050607

  • Multi-scale analysis of GaAs MOVPE process by using wide-stripe selective area growth and computational fluid dynamics simulation 査読

    Haizheng Song, Ik Tae Im, Masakazu Sugiyama, Yoshiaki Nakano, Yukihiro Shimogaki

    ECS Transactions   1 ( 2 )   113 - 120   2005年 (   ISSN:1938-5862   eISSN:1938-6737 )

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    掲載種別:研究論文(国際会議プロシーディングス)  

    A multi scale analysis by combining the computational fluid dynamics (CFD) analysis and wide stripe selective area growth (SAG) analysis has been employed to elucidate GaAs MOVPE process at 600 °C. It can extract major route to deposit films and related kinetic information, experimentally. The CFD simulation reproduced the macro scale variation of GaAs growth rate along the flow direction. The major rate-limiting step was the mass transport of the group III species. By analyzing the micro scale growth rate profile in SAG, the value of surface reaction rate constant (k s) has been obtained. The value of k s varied along the flow direction, suggesting that the surface reaction is not a simple first-order reaction of an intermediate species. The profile of k s along the flow direction suggested the contribution of trimethyl-gallium (TMGa) itself to the surface reaction and the effect of by-products. © 2005 The Electrochemical Society.

  • OPLEAF connecting optical fibers to high density optical IC 査読

    Tadashi Sonobe, Noriyoshi Hiroi, Yoshiaki Nakano, Hiroyuki Fujita

    IEEE/LEOS Optical MEMS 2005: International Conference on Optical MEMS and Their Applications   199 - 200   2005年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    We have designed and fabricated an OPLEAF (OPtical LEAd Frame) that serves as the interface between optical fibers and a high density optical IC. The OPLEAF is a micromachined structure for converting an optical fiber array pitch from 250 μ m to 30 μ m and aligning thinned fibers to the optical 1C. © 2005 IEEE.

    DOI: 10.1109/OMEMS.2005.1540148

  • Monolithic MZI all-optical switch with selective area MOVPE 査読

    Xueliang Song, Foo Cheong Yit, Zhengrui Zhang, Yoshiaki Nakano

    Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD   229 - 232   2005年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    We demonstrate a bandgap-engineered dynamic monolithic MZI SOA all-optical switch with wide stripe selective area MOVPE. Compared with other simple laser-EAM integration with other bandgap engineering techniques, it is the largest working device ever achieved. All-optical wavelength conversion was achieved with single SOA all-optical modulation. In all-optical switching with differential phase technique, a 28ps switching window was successfully demonstrated. © 2005 IEEE.

    DOI: 10.1109/COMMAD.2004.1577532

  • Prediction method for the bandgap profiles of InGaAsP multiple quantum well structures fabricated by Selective Area Metal-Organic Vapor Phase Epitaxy 査読

    T Shioda, M Sugiyama, Y Shimogaki, Y Nakano

    2005 International Conference on Indium Phosphide and Related Materials   464 - 467   2005年 (   ISSN:1092-8669 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    We simulated the bandgap distribution of InGaAsP MQWs grown by selective-area MOVPE based on vapor-phase diffusion model. The accuracy of the simulation was sufficient for the design of integrated semiconductor optical devices.

  • Quantum energy levels in mass-transported InAsP quantum wires buried in InGaAsP/InP 査読

    Takafumi Ohtsuka, Jesse Darja, Muneki Nakada, Yoshiaki Nakano

    Conference Proceedings - International Conference on Indium Phosphide and Related Materials   2005   359 - 362   2005年 (   ISSN:1092-8669 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    Quantum energy levels and wavefunctions in mass-transported InAsP quantum wires have been calculated. The calculations have been compared with experimental results
    good agreement has been obtained on the polarization anisotropy of the optical emission. © 2005 IEEE.

    DOI: 10.1109/ICIPRM.2005.1517501

  • Modeling of all-optical flip-flop bistable laser diodes using the finite-difference beam-propagation method 査読

    Mitsuru Takenaka, Maura Raburn, Yoshiaki Nakano

    Optics InfoBase Conference Papers   2005年 (   ISSN:2162-2701 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:Optical Society of America (OSA)  

    Numerical modeling of all-optical flip-flop multimode interference bistable laser diodes is discussed using the finite-difference beam propagation method extended with the carrier rate equation. All-optical flip-flop operation was analyzed with relatively low computational expenditure. ©2005 Optical Society of America.

    DOI: 10.1364/ipra.2005.ime4

  • Selective area movpe for GaAs on (100) misoriented substrates 査読

    Haizheng Song, Xueliang Song, Masakazu Sugiyama, Yoshiaki Nakano, Yukihiro Shimogaki

    Proceedings - Electrochemical Society   PV 2005-04   383 - 392   2005年

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    掲載種別:研究論文(国際会議プロシーディングス)  

    Surface reaction kinetics for the selective area metalorganic vapor phase epitaxy (MOVPE) for GaAs on (100) just and misoriented substrates were studied on the effect of TMGa partial pressure. Through analysis of growth rate profile in a 380-μm-wide stripe, surface reaction rate constants (k s) for Ga-species were extracted from two-dimension linear simulation. The value of k s increased with offset angle and decreased with the increase in the partial pressure of TMGa. Except for the growth on 15° offset substrate, the value of k s reached a constant value at sufficient partial pressure of TMGa. Ridged growth appeared on the surface adjacent to the mask on misoriented GaAs substrates resulted from surface migration from the mask and/or sidewall of the epilayer. The width of the ridge-growth region increased linearly with the growth temperature. Its cross-sectional area showed parabolic increase with the temperature. Both the width and the area decreased with substrate misoriented angle.

  • Surface kinetics in MOVPE of InP and INGAP analyzed by flow modulation method 査読

    T Nakano, M Sugiyama, Y Nakano, Y Shimogaki

    2005 International Conference on Indium Phosphide and Related Materials   479 - 482   2005年 (   ISSN:1092-8669 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    By the flow modulation growth, we suggest the existence of an intermediate layer at the surface of InP and InGaP during the growth. Its transient behavior was analyzed in connection to the surface segregation phenomena.

  • TM mode waveguide optical isolator based on the nonreciprocal loss shift 査読

    Tomohiro Amemiya, Hiromasa Shimizu, Yoshiaki Nakano

    Conference Proceedings - International Conference on Indium Phosphide and Related Materials   2005   303 - 306   2005年 (   ISSN:1092-8669 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    We developed a TM mode waveguide optical isolator based on the nonreciprocal loss shift. The isolator consists of a semiconductor optical amplifier with a Ni/Fe ferromagnetic bilayer electrode. An isolation of 6.6 dB/mm was achieved for a wavelength of 1530 nm. © 2005 IEEE.

    DOI: 10.1109/ICIPRM.2005.1517486

  • Regenerative wavelength conversion using optical flip-flop outputs of multimode interference bistable laser diodes 査読

    Mitsuru Takenaka, Maura Rabum, Yoshiaki Nakano

    Conference Proceedings - International Conference on Indium Phosphide and Related Materials   2005   625 - 628   2005年 (   ISSN:1092-8669 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    Regenerative wavelength conversion was obtained using multimode interference bistable laser diodes and cross gain saturation in semiconductor optical amplifiers. A digital transfer function of wavelength conversion was achieved through the optical flip-flop thresholding function. © 2005 IEEE.

    DOI: 10.1109/ICIPRM.2005.1517574

  • Selective area movpe based InP WDM channel selector 査読

    Abdullah Al Amin, Kenji Sakurai, Tomonari Shioda, Masakazu Sugiyama, Yoshiaki Nakano

    Conference Proceedings - International Conference on Indium Phosphide and Related Materials   2005   31 - 34   2005年 (   ISSN:1092-8669 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    We demonstrate an integrated channel selector featuring an array of quantum well semiconductor optical amplifiers and arrayed waveguide demultiplexer. 12dB crosstalk was achieved, first ever for a device using single selective area MOVPE. © 2005 IEEE.

    DOI: 10.1109/ICIPRM.2005.1517412

  • Wavelength conversion using polarization dependence of cross-phase modulation in an InGaAlAs multiple-quantum-well electroabsorption modulator 査読

    Xiaoping Zhou, Hiromasa Shimizu, Kumtornkittikul Chaiyasit, Yoshiaki Nakano

    Conference Proceedings - International Conference on Indium Phosphide and Related Materials   2005   39 - 42   2005年 (   ISSN:1092-8669 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    We experimentally demonstrate wavelength conversion using polarization dependence of cross-phase-modulation in an InGaAlAs MQW-EA modulator that can operate at small signal power less than +8dBm and give very high extinction ratio over 31dB © 2005 IEEE.

    DOI: 10.1109/ICIPRM.2005.1517414

  • First demonstration of TE mode nonreciprocal propagation in an InGaAsP/InP active waveguide for an integratable optical isolator 査読

    Hiromasa Shimizu, Yoshiaki Nakano

    Japanese Journal of Applied Physics, Part 2: Letters   43 ( 12 A )   L1561 - L1563   2004年12月 (   ISSN:0021-4922 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We have proposed and fabricated a TE mode semiconductor-waveguide-type optical isolator based on the nonreciprocal loss shift at a wavelength λ= 1560 nm. Furthermore, we demonstrate, for the first time, a TE mode nonreciprocal loss shift of 9.3 dB/mm under a magnetic field of +/- 1 kG in the facricated InGaAsP active waveguide with Fe on an InP substrate. This result opens a way to the monolithic integration of semiconductor waveguide-type optical isolators with edge emitting semiconductor lasers.

    DOI: 10.1143/JJAP.43.L1561

  • The role of the surface adsorption layer during MOVPE growth analyzed by the flow modulation method 査読

    T Nakano, M Sugiyama, Y Nakano, Y Shimogaki

    JOURNAL OF CRYSTAL GROWTH   272 ( 1-4 )   15 - 23   2004年12月 (   ISSN:0022-0248 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:ELSEVIER SCIENCE BV  

    In conventional growth models of MOVPE, it was assumed that the group-III elements adsorbed on the surface are directly converted into a crystal layer. However, while investigating the depth profile of the In1-xGaxP film, it was found that an In-rich region exists within similar to10 nm from the top of the film. Conventional growth models cannot explain this phenomenon because the atoms cannot move once they are incorporated from gas phase to a crystal. In order to explain this variation of the In content, we propose a novel crystal growth model considering the surface adsorbed layer, in which the atoms can easily interchange each other. We call this layer a 'subsurface'. The In surface segregation can be explained by assuming that the reaction rate to incorporate atoms from gas phase to the subsurface and the rate to convert the subsurface into crystal layers have a significant difference. We have performed a quantitative analysis on the existence of the subsurface using the flow modulation growth, in which a group-III source was supplied for a certain period followed by a purge period while a group-V source was continuously supplied. By this analysis, we evaluated the rate constants of the generation of a subsurface from gas phase and the conversion from the subsurface to a crystal layer. The steady-state thickness of the subsurface was estimated to be 2.5 nm. (C) 2004 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jcrysgro.2004.08.119

  • Fabrication of AlGaN-based waveguides by inductively coupled plasma etching 査読

    N Li, Waki, I, C Kumtornkittikul, JH Liang, M Sugiyama, Y Shimogaki, Y Nakano

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   43 ( 10B )   L1340 - L1342   2004年10月 (   ISSN:0021-4922 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:INST PURE APPLIED PHYSICS  

    We fabricated high-mesa waveguides consisting of Al0.1Ga0.9N cladding layers and an AlN/GaN multiple quantum well core layer using inductively coupled plasma dry etching. Suitable conditions for vertically abrupt profiles were determined with an excellent reproducibility by optimizing the ICP power, bias power, gas pressure, and gas component. The etching selectivity of the samples to the SiO2 mask was 10, which is larger than previously reported values. Light propagation at 1.55mum in the waveguides was also confirmed.

    DOI: 10.1143/JJAP.43.L1340

  • Erratum: Shortest intersubband transition wavelength (1.68 μm) achieved in AIN/GaN multiple quantum wells by metalorganic vapor phase epitaxy (Applied Physics Letter (2003) 82 (4465)) 査読

    Ichitaro Waki, Chaiyasit Kumtornkittikul, Yukihiro Shimogaki, Yoshiaki Nakano

    Applied Physics Letters   84 ( 18 )   3703   2004年5月 (   ISSN:0003-6951 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1063/1.1748852

  • Control of InxGa1-xAs Capping Layer Induced Optical Polarization in Edge-Emitting Photoluminescence of InAs Quantum Dots 査読

    Pachamuthu Jayavel, Hirokazu Tanaka, Takashi Kita, Osamu Wada, Hiroji Ebe, Mitsuru Sugawara, Jun Tatebayashi, Yasuhiko Arakawa, Yoshiaki Nakano, Tomoyuki Akiyama

    Jpn. J. Appl. Phys.   43 ( 4B )   1978 - 1980   2004年4月 (   ISSN:0021-4922 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:公益社団法人 応用物理学会  

    We report polarization properties of InAs self-assembled quantum dots (QD) observed from cleaved-edge photoluminescence (PL) of the dots. Transverse-electric (TE) and transverse-magnetic (TM) mode intensities were monitored for dots having In composition of $x=0$ and 0.13. TE-mode intensity for dots with $x=0$ is much larger than TM-mode intensity. On the other hand, for $x=0.13$, TM-mode intensity is dominant, i.e., the polarization is inverted. The results indicate that the polarization anisotropy of the dots in the active region of the waveguide structure can be controlled by the capping layer In compositions.

    DOI: 10.1143/JJAP.43.1978

    その他リンク: https://jlc.jst.go.jp/DN/JALC/00240270423?from=CiNii

  • Propagation loss measurement for surface plasmon-polariton modes at metal waveguides on semiconductor substrates 査読

    Touichiro Goto, Yoshitada Katagiri, Hiroshi Fukuda, Hiroyuki Shinojima, Yoshiaki Nakano, Ikutaro Kobayashi, Yasuyuki Mitsuoka

    Applied Physics Letters   84 ( 6 )   852 - 854   2004年2月 (   ISSN:0003-6951 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    The propagation loss of surface plasmon-polariton modes excited in metal waveguides on semiconductors was directly measured. Waveguides having MIS and MIMS structures as well as a simple metal-semiconductor MS structure were examined. The metal waveguides with MIS and MIMS structures have loss coefficients of 9-17 dB/mm, which are low enough for practical application.

    DOI: 10.1063/1.1645990

  • Fundamental kinetics determining growth rate profiles of InP and GaAs in MOCVD with horizontal reactor 査読

    IT Im, HJ Oh, M Sugiyama, Y Nakano, Y Shimogaki

    JOURNAL OF CRYSTAL GROWTH   261 ( 2-3 )   214 - 224   2004年1月 (   ISSN:0022-0248 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:ELSEVIER SCIENCE BV  

    Fundamental kinetics related to the film growth of InP and GaAs are systematically analyzed using numerical methods. Effects of the gas-phase reaction rate constant, the surface reaction rate constant and the mass diffusivity on a film growth rate are investigated. The rate-limiting step determining a typical profile of the growth rate in a horizontal MOCVD reactor is revealed both quantitatively and qualitatively using basic reaction models. The axial growth rate profile observed over 20 cm is divided into two regions: the upstream region where the growth rate increased monotonically and the downstream region where the rate decreased monotonically. The increase in the upstream region was caused by the gas-phase mass transport of the group III precursors from the inlet which was apart from the susceptor in the vertical direction. Both the temperature dependence of the mass diffusivity and the thermal diffusion have strong effect on the slope of the increase. The decrease in the downstream region reflects the decay of the gas-phase concentration of group V intermediates, the rate of which was limited by the gas-phase diffusion of the intermediate to the substrate. Using this, we can measure the value of the mass diffusivity of a group III intermediate by observing the decay in the growth rate in a horizontal MOCVD reactor. (C) 2003 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jcrysgro.2003.11.024

  • Realization of All-Optical Flip-Flop Using Directionally Coupled Bistable Laser Diode 査読

    Mitsuru Takenaka, Yoshiaki Nakano

    IEEE Photonics Technology Letters   16 ( 1 )   45 - 47   2004年1月 (   ISSN:1041-1135 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    A novel all-optical flip-flop device has been realized using a directionally-coupled bistable laser diode (DC-BLD). We have fabricated the DC-BLD by a conventional fabrication technique of LDs. To separate the adjacent electrodes of the directional coupler, an oblique electron-beam evaporation technique was developed. By this self-align process, the two adjacent waveguides of the directional coupler were electrically isolated without employing any additional lithography step. Using the fabricated DC-BLD, all-optical flip-flop has been demonstrated due to the nonlinear effects of the saturable absorber and the directional coupler. The flip-flop operation has been achieved with sufficiently small input optical power level around 0 dBm.

    DOI: 10.1109/LPT.2003.818900

  • Polycrystals growth on dielectric masks during InP/GaAs selective MOVPE 査読

    M Sugiyama, H Oh, Y Nakano, Y Shimogaki

    JOURNAL OF CRYSTAL GROWTH   261 ( 2-3 )   411 - 418   2004年1月 (   ISSN:0022-0248 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:ELSEVIER SCIENCE BV  

    In selective-area metalorganic vapor-phase epitaxy, polycrystals are generated on masks of large area. The generation of such crystals should be avoided because they act as uncontrollable sink of film precursors. Although generation of polycrystals is sometimes associated with surface migration of a precursor on masks, our observation suggested that polycrystals are generated when the gas-phase concentration of a film precursor just above masks exceeds a critical value. Reducing either total pressure or partial pressure of the source gas suppressed generation of polycrystals, which is consistent with the gas-phase mechanism. The threshold of gas-phase precursor concentration for generation of polycrystals was investigated as a function of growth temperature and V/III ratio for both GaAs and InP. The threshold increased with temperature, that is to say, fewer polycrystals were observed at higher temperature. The threshold for InP was significantly larger than that for GaAs. This information is useful for designing mask patterns which do not generate polycrystals, and it helps to provide a detailed understanding of nucleation phenomena. (C) 2003 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jcrysgro.2003.11.036

  • The effect of group V precursor on selective area MOVPE of InP/GaAs-related materials 査読

    H Oh, M Sagiyama, Y Nakano, Y Shimogaki

    JOURNAL OF CRYSTAL GROWTH   261 ( 2-3 )   419 - 426   2004年1月 (   ISSN:0022-0248 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:ELSEVIER SCIENCE BV  

    Tertiarybutylphosphine (TBP) and tertiarybutylarsine (TBAs) are widely used as alternative group V precursors for phosphine and arsine, mainly because of their comparatively low toxicity and low decomposition temperature. In this work, the effect of group V precursors on selective area metal-organic vapor phase epitaxy (MOVPE) of InP/GaAs-related materials was studied, in terms of the surface sticking probabilities of group III intermediates. The sticking probabilities were measured by analyzing the thickness profiles of selectively grown films of GaAs and InP in 380-pmwide growth area between SiO2 masks. The sticking probability of the In precursor was about 3.2 times larger in the growth with PH3 than with TBP at 823 K. The sticking probability of the Ga precursor was nearly the same whether the group V source was AsH3 or TBAs. Such differences were manifested in the In/Ga ratio of selectively grown InxGa1-xP. The difference in the sticking probabilities between the precursors of In and Ga mainly determined the In/Ga ratio. Based on a linear combination model using measured values of sticking probabilities, the variation of the composition was predicted to be larger in the growth with phosphine than with TBP. Measurement of the In/Ga composition using electron-probe micro analysis confirmed that prediction. It was proved that the kind of group V precursor is an important factor that governs composition uniformity in selective area MOVPE. (C) 2003 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jcrysgro.2003.11.037

  • All-optical flip-flop multimode interference bistable laser diodes with reverse biased saturable absorbers 査読

    Mitsuru Takenaka, Maura Raburn, Yoshiaki Nakano

    Conference Digest - IEEE International Semiconductor Laser Conference   26 - 27   2004年 (   ISSN:0899-9406 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    Optical flip-flop operation has been achieved in an MMI-BLD with reverse biased saturable absorbers for the first time. The reverse bias enabled reduction of absorber length and is expected to result in high speed operation. © 2004 IEEE.

  • Electron cyclotron resonance-reactive ion etching of GaN by cyclic injection of CH <inf>4</inf>/H <inf>2</inf>/Ar and O <inf>2</inf> with constant Ar flow for high etch rate and improvement of etched surface morphology 査読

    Y. Awa, T. Ide, T. Arakawa, N. Haneji, K. Tada, M. Sugiyama, H. Shimizu, Y. Shimogaki, Y. Nakano

    Digest of Papers - Microprocesses and Nanotechnology 2004   280 - 281   2004年

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    掲載種別:研究論文(国際会議プロシーディングス)  

    The electron cyclotron resonance-reactive ion etching conditions of GaN by using CH 4/H 2/Ar mixture gas were investigated. The sample GaN was grown on sapphire substrates by metal organic chemical vapor deposition (MOCVD). The etch rates were found to be increased by increasing RF power. The results show that the combination of cyclic etching method using CH 4/H 2/Ar etching gas and O 2 ashing and constant Ar flow is very effective for obtaining high etch rate and smooth etched surface.

  • Fabrication of semiconductor laser for integration with optical isolator 査読

    Kazumasa Sakurai, Hideki Yokoi, Tetsuya Mizumoto, Daisuke Miyashita, Yoshiaki Nakano

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   43 ( 4 A )   1388 - 1392   2004年 (   ISSN:0021-4922 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Japan Society of Applied Physics  

    As a preliminary experiment for achieving a monolithic integration of a semiconductor laser and an optical isolator, a Fabry-Perot laser integrated with an optical passive waveguide was fabricated using the wafer grown by a selective-area growth technique. We report the characteristics of the laser diode and the loss estimation in the fabricated device.

    DOI: 10.1143/JJAP.43.1388

  • First realization of all-optical flip-flop based on bistable laser diode with active multimode interference cavity 査読

    Mitsuru Takenaka, Yoshiaki Nakano

    OSA Trends in Optics and Photonics Series   95   765 - 767   2004年 (   ISSN:1094-5695 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:Optical Society of American (OSA)  

    We experimentally demonstrate an all-optical flip-flop using a multimode interference bistable laser diode. It is based on bistable switching between two cross-coupled lasing modes. Pulse width conversion experiment and operation speed assessment are also presented. ©2003 Optical Society of America.

  • Fabrication of group III-nitride waveguides by inductively coupled plasma etching 査読

    L. I. Ning, Ichitaro Waki, Chaiyasit Kumtornkittikul, Ji Hao Liang, Masakazu Sugiyama, Yukihiro Shimogaki, Yoshiaki Nakano

    Proceedings - Electrochemical Society   6   270 - 275   2004年

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    掲載種別:研究論文(国際会議プロシーディングス)  

    We demonstrate the fabrication of high-mesa waveguides for structures consisting of Al0.1Ga0.9N cladding layers and a AlN/GaN multiple quantum well core layer using a Cl2-based inductively coupled plasma dry etching technique. Suitable etching conditions for abrupt sidewall profiles and smooth surface morphologies have been established with excellent reproducibility. Light propagation at 1.55 μm in the waveguides was also confirmed.

  • GaN/AIN multiple quantum wells and waveguide fabrication for ultrafast photonic devices utilizing intersubband transition 査読

    C Kumtornkittikul, Waki, I, N Li, M Sugiyama, Y Shimogaki, Y Nakano

    TENCON 2004 - 2004 IEEE REGION 10 CONFERENCE, VOLS A-D, PROCEEDINGS   D140 - D143   2004年 (   ISSN:0886-1420 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    Intersubband transition in GaN/AlN multiple quantum well (MQW) structures was demonstrated with metalorganic vapor phase epitaxy (MOVPE) in a wavelength range of 2.4-3.5 mu m by varying the quantum well with constant barrier width. The linewidths of intersubband absorption are approximately 70 meV, indicating excellent quality of the MOVPE-grown samples. In addition to performing epitaxial growth, we calculated the intersubband absorption taking into account built-in electric field in the MQW structures. Based on optical characterization results, the induced built-in electric field in the MQW structures was found to be very strong in the order of 23 MV/cm. Moreover, we demonstrated the fabrication of ridge waveguide and high-mesa waveguide on the MQW samples, and successfully performed optical waveguide measurement, showing possibility to make high performance intersubband transition devices.

  • Improvement of optical flip-flop characteristics of compact directionally-coupled bistable laser diode 査読

    Mitsuru Takenaka, Maura Raburn, Yoshiaki Nakano

    Conference Proceedings - International Conference on Indium Phosphide and Related Materials   523 - 526   2004年 (   ISSN:1092-8669 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    A directionally-coupled bistable laser diode optical flip-flop has been improved through the application of a reverse voltage to the saturable absorber. Flip-flop operation has been obtained with optical injection below -3 dBm. ©2004 IEEE.

  • Investigation of splitting SPP modes propagating at metal-dielectric interface 査読

    T Suga, T Niimi, Kobayashi, I, Y Katagiri, Y Nakano, Y Mitsuoka

    OPTOMECHATRONIC MICRO/NANO COMPONENTS, DEVICES, AND SYSTEMS   5604   173 - 184   2004年 (   ISSN:0277-786X )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:SPIE-INT SOC OPTICAL ENGINEERING  

    This paper describes surface plasmon polariton (SPP) modes that show extraordinary propagation behaviors along metal stripes with finite width, including multiple energy condensations. Phenomenological and quantitative investigations are carried out on these behaviors. Images of SPP modes at output edges for wide stripes exhibit multiple spots that spanned the lateral side of the stripes. The spot number is monotonously decreased as the stripe length increases. Besides, the input versus output power ratio shows a stepwise change as changing the propagation distance. We present a model of SPP modes to explain these behaviors.

    DOI: 10.1117/12.571011

  • Multi-Scale Analysis for Kinetic Studies of Chemical Vapor Deposition Processes 査読

    Shimogaki Yukihiro, Sugiyama Masakazu, Im Ik-Tae, Oh Ho-Jin, Tokimitsu Takumi, Watanabe Hiroki, Nakano Yoshiaki, Komiyama Hiroshi

    アジア・太平洋化学工学会議発表論文要旨集   2004   153 - 153   2004年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:公益社団法人 化学工学会  

    The authors developed several experimental technique to elucidate the main reaction path ways to deposit thin films by chemical vapor deposition (CVD). These techniques includes the analyses of step coverage profile in micron sized trenches, growth rate profiles of selective growth, growth rate profiles in tubular reactor, and the effect of residence time to the film growth rate. The step coverage profiles and growth rate profiles in selective area growth will provide information on surface reactions, while the other analyses will provide the information of gas-phase and surface kinetics. The combination of these techniques in different size dimension (multi-scale analysis) is a powerful technique to elucidate the important reaction paths in CVD. In this work, a-C:F film deposition by plasma-enhanced CVD (PECVD) and epitaxial growth of InGaAsP thin films by metal-organic vapor phase epitaxy (MOVPE) were chosen as the example for the demonstration of multi-scale analysis. The selective area MOVPE (SAMOVPE) shows non-uniformity in the epitaxial growth area, mostly due to the gas phase concentration distribution of film forming species. This micro-scale profile was mostly controlled by the ratio of diffusion coefficient and the surface reaction rate constant of film forming species, while the growth rate profile in MOVPE reactor (macro-scale) was governed by the diffusional mass transport. Thus the combination of these analysis can give the information of surface reactivity of film forming species. The residence time dependencies of PECVD growth rate and chemical species in gas phase give the information on overall reaction mechanism. The growth rate profile inside the micron size "test structure" gives the detail information of surface reaction mechanism. This is another demonstration of multi-scale analysis.

    DOI: 10.11491/apcche.2004.0.153.0

  • Nanometric mecha-photonics for innovative information and communications systems 査読

    Yoshitada Katagiri, Hiroshi Fukuda, Hiroyuki Shinojima, Yoshiaki Nakano, Masashi Nakao, Mitsuru Naganuma

    Proceedings of SPIE - The International Society for Optical Engineering   5604   11 - 22   2004年 (   ISSN:0277-786X )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    Silicon-based electronics has matured and holds a dominant position in critical technologies for computing systems. Advances in micro-miniaturization techniques enable us to fabricate nanometric devices with novel functions based on mesoscopic physics, and we expect that such devices will innovate on existing systems. Optics has also made tremendous progress since the first laser to generate quasi-coherent light was developed. Lasers are now widely used in basic science and in practical applications such as information processing and communications systems. Many studies have demonstrated novel functions in logics based on not only non-linear effects of media but also quantum-optic effects in nanometer-scaled structures. However, how to overcome the diffraction limit remains an unsolved fundamental problem how to break down the diffraction limit. Here, we report some ideas for nanophotonics and present a future picture of computing systems.

    DOI: 10.1117/12.578616

  • Simulations of semiconductor all-optical flip-flops using the finite-difference beam-propagation method 査読

    Mitsuru Takenaka, Maura Raburn, Yoshiaki Nakano

    Proceedings of the 4th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD '04   15 - 18   2004年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    Applications of the finite-difference beam-propagation method to the analyses of all-optical flip-flops based on bistable laser diodes is discussed. The FD-BPM extended with the carrier rate equation can treat stochastic distributions of photon densities and carrier densities inside the cavities. Three types of all-optical flip-flops have been simulated using the developed models with relatively low computational expenditure.

  • Simulations of distributed bragg reflector multi-mode interference bistable laser diodes for cascadable all-optical flip-flops 査読

    Maura Raburn, Mitsuru Takenaka, Yoshiaki Nakano

    Proceedings of the 4th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD '04   21 - 22   2004年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    The integration of multi-mode interference (MMI) bistable laser diodes (BLDs) with distributed Bragg reflectors (DBRs) is analyzed for cascadable all-optical flip-flops. Device behavior in terms of side mode suppression ratio (SMSR), extinction ratio, and power-current relation is discussed for varied mirror parameters for a 1.55-μm InP/InGaAsP ridge structure. The static laser characteristics are determined through the beam propagation method (BPM) in conjunction with the laser carrier rate equations.

  • Theoretical consideration of surface-plasmon polaritons based on dynamics of electric dipoles formed on metal surfaces 査読

    Katsumasa Horiguchi, Yoshitada Katagiri, Yoshiaki Nakano, Ikutaro Kobayashi, Yasuyuki Mitsuoka

    Proceedings of SPIE - The International Society for Optical Engineering   5604   185 - 194   2004年 (   ISSN:0277-786X )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    Surface-plasmon polaritons (SPPs) existing at metal-dielectric interfaces with exponentially damped vertical intensity profiles have attracted much interest for their capability of confining light energy into a small space beyond the diffraction limit. Theoretical considerations have been given to understandings of wave behaviors based on Maxwell's equations taking into account metals as dielectric materials with negative permittivity. However, since this approach assumes metals as homogeneous media, it is difficult to perform detailed analysis on propagation mechanisms in three-dimensional micro and nano structures. Here we propose a theoretical method based on the dynamics of electric dipoles formed by local displacement of free electrons in metals to describe SPP waves. In this method, the Poisson equation is used to describe actual movement of electrons in metals interacting with the electromagnetic field. Based on this method, we have revealed fundamental properties including electron density distribution functions in the area close to metal surfaces, SPP waves are then modeled by reconstructing microscopic features of such novel electromagnetic waves in a given material systems. After this simple verification, we make the best use of this method to explain SPP propagation at ultra-thin metal films or along narrow metal wires.

    DOI: 10.1117/12.573395

  • Waveguide structure for ultrafast photonic devices utilizing intersubband absorption in GaN-based MOVPE-grown multiple quantum wells 査読

    Chaiyasit Kumtornkittikul, Ichitaro Waki, Ning Li, Hiroshi Otani, Masakazu Sugiyama, Yoshiaki Nakano

    Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS   1   140 - 141   2004年 (   ISSN:1092-8081 )

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    掲載種別:研究論文(国際会議プロシーディングス)  

    We propose waveguide structures for ultrafast optical devices utilizing intersubband absorption in GaN-based multiple quantum wells grown with metalorganic vapor phase epitaxy. The proposed structure can efficiently enhance absorption in the GaN/AIN MOW structure suitable for device fabrication.

  • All-optical wavelength conversion in a GaInAsP/InP optical gate loaded with a Bragg reflector 査読

    Seok-Hwan Jeong, Tetsuya Mizumoto, Mitsuru Takenaka, Yoshiaki Nakano

    Applied Optics   42 ( 33 )   6672 - 6677   2003年11月 (   ISSN:2155-3165 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    All-optical wavelength conversion employing a GaInAsP(InP nonlinear distributed-feedback waveguide switch is investigated. The device has the advantages of simple structure, compactness, polaritynoninverted operation, and feasibility of integration with other photonic devices such as semiconductor optical amplifier and modulators. We show that the device exhibits constant conversion efficiency around (9.2 dB in a signal-wavelength range of 1530–1560 nm. Furthermore, this device can potentially be made polarization independent. © 2003 Optical Society of America.

    DOI: 10.1364/AO.42.006672

  • Comparison of organic and hydride group V precursors in terms of surface kinetics in wide-gap selective area metalorganic vapor phase epitaxy 査読

    HJ Oh, M Sugiyama, Y Nakano, Y Shimogaki

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   42 ( 10A )   L1195 - L1197   2003年10月 (   ISSN:0021-4922 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:INST PURE APPLIED PHYSICS  

    A difference between organic group V precursors, tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP), and hydride precursors, arsine (AsH3) and phosphine (PH3), was clarified in terms of their effect on the surface reaction rate constant k(s) of In and Ga precursors, by analyzing the growth rate profile of selectively grown films between SiO2 masks. When the organic precursor was used, the values of ks for In and Ga precursors were similar within a factor of 1.5 at 873 K. On the other hand, when the hydride precursor was used, the value of k(s) for the In precursor was larger than that for Ga by a factor of 9 at the same temperature. As a result, it was expected that the group III composition ratios, In/Ga, of ternary and quaternary films are expected to be nearly uniform in the selectively grown films with organic group V precursors, and that hydride precursor should cause a significant variation in In/Ga ratio. The selection of group V precursors was proved to be essential even for controlling the composition uniformity in selective-area metalorganic vapor phase epitaxy.

    DOI: 10.1143/JJAP.42.L1195

  • Surface reaction kinetics in metalorganic vapor phase epitaxy of GaAs through analyses of growth rate profile in wide-gap selective-area growth 査読

    HJ Oh, M Sugiyama, Y Nakano, Y Shimogaki

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   42 ( 10 )   6284 - 6291   2003年10月 (   ISSN:0021-4922 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:INST PURE APPLIED PHYSICS  

    Wide gap selective area growth was proposed as a probe for obtaining information of surface kinetics in the metalorganic vapor phase epitaxy (MOVPE) of GaAs. GaAs was grown over patterned substrates using a SiO2 mask. The characterized growth-rate enhancement profiles for several total pressures were successfully fitted with two-dimensional simulation, taking only gas phase diffusion into account, except for the profiles in the vicinity of the mask edge, which seemed to reflect surface diffusion. The only parameter governing the profile was D/k(s), the ratio of the gas-phase diffusion coefficient (D) to the surface reaction rate constant (k(s)) of a film precursor. The value of D can be estimated using the Chapman-Enskog kinetic theory, the accuracy of which was validated by observing a reactor-scale growth-rate profile under the mass-transfer-limited regime, and thus we obtained the value of k(s). The sticking probability of a precursor, which was converted from k(s), ranged between 0.06 and 0.33 for the temperature range of 823 to 973 K. The values are smaller than unity which was often assumed in growth simulations. The value of k(s) was measured as a function of growth temperature. Its activation energy changed at around 873 K: 8 kJ/mol for higher temperature and 121 kJ/mol for lower temperature. This information is important not only in the design of a selective-area growth process but also for constructing a more realistic reaction model of MOVPE.

    DOI: 10.1143/JJAP.42.6284

  • Surface Micromachining in Optical Isolator with Semiconductor Guiding Layer for Enhancement of Magnetooptic Effect 査読

    Yokoi Hideki, Mizumoto Tetsuya, Sakai Takashi, Ohtsuka Takafumi, Nakano Yoshiaki

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes   42 ( 8 )   5094 - 5097   2003年8月 (   ISSN:0021-4922 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:公益社団法人 応用物理学会  

    A magnetooptic waveguide with a magnetic garnet/GaInAsP/air structure was effective in enhancing the magnetooptic effect. Surface micromachining was investigated for fabricating a magnetooptic waveguide in an optical isolator with a semiconductor guiding layer. As a preliminary experiment, a GaInAsP rib waveguide with an air cladding layer was fabricated by selective wet etching. The rib waveguide with a 1-mm-long air bridge was successfully obtained on the GaInAsP guiding layer. Light waves could be guided in the GaInAsP waveguide with the air bridge structure.

    DOI: 10.1143/JJAP.42.5094

    その他リンク: https://jlc.jst.go.jp/DN/JALC/00231499284?from=CiNii

  • Multimode interference bistable laser diode 査読

    Mitsuru Takenaka, Yoshiaki Nakano

    IEEE Photonics Technology Letters   15 ( 8 )   1035 - 1037   2003年8月 (   ISSN:1041-1135 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We propose a novel bistable laser diode (BLD) with active multimode interference (MMI) cavity. Bistable switching can be realized between two cross-coupled modes by means of gain saturation. Static characteristics of the multimode interference (MMI)-BLD are analyzed using a finite-difference beam propagation method. The photon-carrier interactions are calculated using the carrier-rate equation. This model gives accurate distributions of photon and carrier densities, optical gain, and refractive index inside the cavity. We predict that the MMI-BLD shows bistable switching between the two cross-coupled modes by light injection, therefore allowing it to be used as all-optical flip-flop or optical memory.

    DOI: 10.1109/LPT.2003.815361

  • Investigation of the modulation efficiency of InGaAsP/InP ridge waveguide phase modulators at 1.55 mu m 査読

    HS Park, JC Yi, YT Byun, S Lee, SH Kim, M Takenaka, Y Nakano

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   42 ( 7A )   4378 - 4382   2003年7月 (   ISSN:0021-4922 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:JAPAN SOCIETY APPLIED PHYSICS  

    Single-mode P-p-n-N InGaAsP/InP ridge waveguide phase modulators have been fabricated and investigated at 1.55 mum. The ridge waveguide structure has been designed using a finite element method, grown by metal-organic-chemical-vapor-deposition (MOCVD), and fabricated by chemical wet etching. Their phase modulation characteristics were measured by using the Fabry-Perot resonance method with a tunable laser. The measured phase modulation efficiency for a 2-mm-long device was determined to be as high as 34 deg/V.mm for the TE mode. This value corresponds to the highest experimental electrooptic modulation efficiency reported thus far for InGaAsP/InP DH-type phase modulators at the said wavelength region.

    DOI: 10.1143/JJAP.42.4378

  • Investigation of external optical feedback resistance of IC-DFB and GC-DFB lasers using a very simple experimental set-up 査読

    Chang-Zheng Sun, Bing Xiong, Yi Luo, Yoshiaki Nakano

    Chinese Physics Letters   20 ( 7 )   1061 - 1063   2003年7月 (   ISSN:0256-307X )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We study the external optical feedback resistance of both index-coupled (IC) and gain-coupled distributed feedback (DFB) lasers using a very simple experimental set-up. Though. IC-DFB lasers with large coupling coefficients are found to be less sensitive to external reflection, they suffer from mode instability at high injection level. On the other hand, the introduction of gain-coupling mechanism can significantly improve both the immunity to external optical feedback and the single mode yield of the device.

    DOI: 10.1088/0256-307X/20/7/326

  • Electron Cyclotron Resonance-Reactive Ion Etching of III-V Semiconductors by Cyclic Injection of CH4/H2/Ar and O2 with Constant Ar Flow 査読

    Haneji Nobuo, Segami Goh, Ide Tomoyoshi, Suzuki Tatsuya, Arakawa Taro, Tada Kunio, Shimogaki Yukihiro, Nakano Yoshiaki

    Japanese journal of applied physics. Pt. 1, Regular papers & short notes   42 ( 6 )   3958 - 3961   2003年6月 (   ISSN:0021-4922 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:公益社団法人 応用物理学会  

    Electron cyclotron resonance-reactive ion etching (ECR-RIE) is very useful for fabricating semiconductor photonic devices and integrated circuits (PICs). The mixture gas of CH4/H2 is used for etching III-V semiconductors, but the carbon polymer film deposited on the surface during the etching process presents some problems. Thus, the polymer film must be ashed off using an O2 plasma. We introduced the cyclic injection of CH4/H2/Ar and O2 to ECR-RIE, and demonstrated that it was very useful for etching of InP. However, compound semiconductors containing Al (e.g., AlGaAs and InAlAs) react with oxygen and an alumina layer is formed, which cannot be etched by CH4/H2 etching. Therefore, we used a new cyclic etching process with constant Ar flow in the chamber to remove this alumina layer by Ar ion etching, and obtained good results for etching rate and surface morphology for the compound semiconductors containing Al. We also proposed a suitable combination of three cyclic etching procedures (continuous etching, cyclic etching without constant Ar flow and cyclic etching with constant Ar flow) for etching the multilayer heterostructure of III-V semiconductors including InP and/or compound semiconductors containing Al.

    DOI: 10.1143/JJAP.42.3958

    その他リンク: https://jlc.jst.go.jp/DN/JALC/00230503333?from=CiNii

  • Shortest intersubband transition wavelength (1.68 mu m) achieved in AlN/GaN multiple quantum wells by metalorganic vapor phase epitaxy 査読

    Waki, I, C Kumtornkittikul, Y Shimogaki, Y Nakano

    APPLIED PHYSICS LETTERS   82 ( 25 )   4465 - 4467   2003年6月 (   ISSN:0003-6951 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:AMER INST PHYSICS  

    Two-hundred-period high-quality AlN/GaN multiple quantum wells (MQWs) grown by metalorganic vapor phase epitaxy are studied using high-resolution x-ray diffraction, transmission electron microscopy, and optical transmission spectroscopy. Excellent interfaces of the MQWs are confirmed by these measurements. The strong intersubband absorption peak at a wavelength of 1.68 m m is achieved for AlN (1.6 nm)/GaN(1.7 nm) MQW. The full width at half-maximum of the absorption peak is estimated to be 27 meV. (C) 2003 American Institute of Physics.

    DOI: 10.1063/1.1586473

  • Optical characteristics of PnpN optical thyristor operating at 1.55 μm 査読

    Doo-Gun Kim, Hee-Hyun Lee, Woon-Kyung Chol, Jung-Jun Lee, Young-Wan Choi, S. Lee, Deokha H. Woo, Young-Tae Byun, J. H. Kim, Soo Hyun Kim, N. Futakuchi, Yoshiaki Nakano

    Optical Engineering   42 ( 4 )   1093 - 1099   2003年4月 (   ISSN:0091-3286 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    InGaAs/InP multiple quantum well (MOW) PnpN depleted optical thyristors (DOTs) operating at 1.55 μm are proposed and fabricated. To analyze their switching characteristics, we simulate nonlinear s-shape current-voltage curves using the finite difference method (FDM) associated with the current-oriented method. Using the FDM, we calculate the effects of such parameters as doping concentration and the thicknesses of the outer and inner layers of the thyristor to determine an optimized structure in the view of fast and low-power-consuming operation. With these results, we fabricate waveguide- and vertical-type InGaAs/InP MQW PnpN DOTs. The waveguide-type DOT shows sufficient nonlinear s-shape I-V characteristics with a switching voltage of 4.03 V and a holding voltage of 1.77 V, and spontaneous emission along the waveguide. The current-voltage characteristics of the vertical-type DOT are shown very well under 150 μW of input power, while the s-shape disappears at 200 μW. © 2003 Society of Photo-Optical Instrumentation Engineers.

    DOI: 10.1117/1.1557160

  • Lasing characteristics of InGaAs/InGaAsP multiple-quantum-well optical thyristor operating at 1.561 μm 査読

    Doo Gun Kim, Hee Hyun Lee, Woon Kyung Choi, Young Wan Choi, Seok Lee, Deok Ha Woo, Young Tae Byun, Jae Hun Kim, Sun Ho Kim, Yoshiaki Nakano

    Applied Physics Letters   82 ( 2 )   158 - 160   2003年1月 (   ISSN:0003-6951 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    A demonstration of a waveguide-type depleted optical thyristor laser diode (WDOT-LD) with InGaAs/InGaAsP multiple-quantum-well structure was presented. To increase the efficiency of optical emission, the single-quantum-well undoped layer was incorporated in the active layer of a WDOT-LD to have lasing properties at a wavelength of 1.5 μm. Results proposed potential applications in advanced optical communication systems such as CDMA and ATM system.

    DOI: 10.1063/1.1536711

  • Control of indium surface segregation in GaAs layer on InGaP grown by MOVPE 査読

    Y Fukushima, Y Nakano, Y Shimogaki

    PROGRESS IN SEMICONDUCTORS II- ELECTRONIC AND OPTOELECTRONIC APPLICATIONS   744   3 - 8   2003年 (   ISSN:0272-9172 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:MATERIALS RESEARCH SOCIETY  

    In order to fabricate good hetero-interface of GaAs/InGaP system by metal-organic vapor phase epitaxy (MOVPE), we studied the indium atom distribution by X-ray photoelectron spectroscopy (XPS). The systematic XPS depth profile analyses of InGaP/GaAs revealed that InGaP surface contains an excess amount of indium atoms. The excess indium atoms diffuse into GaAs layer and cause surface segregation. We have developed a novel gas switching sequence to switch the growth from InGaP to GaAs. That is, after the growth of InGaP, trimethylgallium (TMGa) was pre-introduced to the reactor to terminate the excess amount of indium atoms on InGaP layer. Then tertiarybutylarsine (TBAs) was allowed to flow on the InGaP surface to initiate GaAs growth. This new sequence reduced the amount of indium atoms at the interface and contributed to suppress the inter-diffusion and surface segregation of indium atoms.

  • First observation of 1.55 mu m intersubband absorption in MOVPE-grown AIN/GaN multiple quantum wells 査読

    C Kumtornkittikul, Waki, I, Y Shimogaki, Y Nakano

    2003 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2   947 - 948   2003年 (   ISSN:1092-8081 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    We demonstrate the first intersubband absorption at 1.55 mum in MOVPE-grown AIN/GaN MQW structures. The absorption linewidth is 45 meV, the narrowest ever reported for 1.55-mum intersubband absorption in nitride based MQWs.

  • Electron cyclotron resonance-reactive ion etching of InGaAs/InAlAs/InP multilayer structure and GaN by cyclic injection of CH4/H2/Ar and O2 with constant Ar flow 査読

    N. Haneji, T. Ide, Y. Awa, T. Arakawa, K. Tada, M. Sugiyama, Y. Shimogaki, Y. Nakano

    Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003   330 - 331   2003年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:Institute of Electrical and Electronics Engineers Inc.  

    In this paper, we showed the combination of continuous etching and cyclic etching with/without constant Ar flow to each multilayer structure such as InGaAs/InAlAs/InP for optical devices such as lasers and optical modulators. We also applied cyclic etching with constant Ar flow to GaN, and obtained good surface morphology and etching characteristics.

    DOI: 10.1109/IMNC.2003.1268780

  • Monolithic integration of laser diode and magneto-optic waveguide 査読

    Kaztmasa Sakurai, Hideki Yokoi, Tetstiya Mizumoto, Daisiike Miyashita, Yoshiaki Nakano

    Conference on Lasers and Electro-Optics Europe - Technical Digest   602   2003年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    Monolithic integration of the optical isolator with a GaInAsP/InP laser diode can be achieved by employing a selective area growth technique. In order to investigate the feasibility of the monolithic integration approach, we must realize a laser diode on an active region and a magneto-optic waveguide on a passive region of an identical substrate. In this article, we report the fabrication of a Fabri-Perot laser diode and a magneto-optic waveguide on the selective-area-grown wafer. © 2003 IEEE.

    DOI: 10.1109/CLEOE.2003.1313664

  • Simulation of all-optical flip-flops based on bistable laser diodes with nonlinear couplers 査読

    M. Takenaka, Y. Nakano

    Proceedings of the IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD 2003   2003-   94 - 95   2003年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:Institute of Electrical and Electronics Engineers Inc.  

    An FD-BPM have been developed to analyze characteristics of all-optical flip flops based on bistable laser diodes (BLDs) with a directional coupler and an MMI coupler. By combining it with the carrier rate equation, the developed FD-BPM can calculate the static characteristics of these BLDs with relatively small computational resources.

    DOI: 10.1109/NUSOD.2003.1259062

  • Realization of a compact directionally-coupled bistable laser diode for all-optical flip-flop application 査読

    Mitsuru Takenaka, Yoshiaki Nakano

    Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS   2   828 - 829   2003年 (   ISSN:1092-8081 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    A compact all-optical flip-flop has been realized in a directionally-coupled bistable laser diode. Using a narrow gap directional coupler, the device length has been reduced down to 500 μm from 1300 μm.

  • Study on the surface reaction kinetics of InGaAsP related materials MOCVD through analyses of growth rate distribution in the selective area growth 査読

    HJ Oh, IT Im, M Sugiyama, Y Nakano, Y Shimogaki

    2003 INTERNATIONAL CONFERENCE INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS   397 - 400   2003年 (   ISSN:1092-8669 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    Wide stripe selective area growth was proposed as a tool for getting information on surface kinetics in the metalorganic chemical vapor deposition (MOCVD). GaAs and InP were grown over patterned substrates using SiO2 mask. The characterized growth-rate enhancement profiles were successfully fitted with 2-dimensional simulation taking only gas phase diffusion into account except for the profiles in the vicinity of mask edge, which seemed to reflect surface diffusion. Considering that gas phase diffusion coefficient can be estimated by observing a reactor-scale growth-rate profile, the only parameter determining growth-rate enhancement profile was sticking probability of a film precursor on the surface of GaAs. The estimated sticking probability was 0.05 - 0.4 for GaAs and 0.26 - 0.5 for InP. The information on the surface reaction was gathered in various conditions, such as temperature, group V partial pressure. The study on polycrystalline growth over mask was also carried out using the information of SAG analysis. It is shown that polycrystals was generated when the concentration of a film precursor just above the mask exceeded a critical value. This information is important not only for the design of selective area growth process but also for constructing more realistic reaction model of MOCVD.

  • Use of a device simulator in conjunction with orthogonal arrays in optimizing the design of InAlGaAs/lnP MQW laser diodes 査読

    J. Darja, S. Narata, Nong Chen, Y. Nakano

    Proceedings of the IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD 2003   2003-   25 - 26   2003年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:Institute of Electrical and Electronics Engineers Inc.  

    With the aid of a device simulator, design of experiments for the optimal growth and process parameters of InAlGaAs/InP MQW laser diodes at 1.3 μm wavelength is illustrated. Prior to the actual simulation, the materials' parameters used in the simulation are calibrated with the result from broad area InGaAlAs/InP laser diode L-I measurements. Simulation by LASTIP, a commercial simulation software in conjunction with orthogonal arrays (OAs), or the Taguchi method are used to locate an optimal design condition.

    DOI: 10.1109/NUSOD.2003.1259034

  • Characterization of crack-free AlN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy using H2 as a carrier gas 査読

    I. Waki, C. Kumtornkittikul, K. Sato, Y. Shimogaki, Y. Nakano

    Physica Status Solidi (B) Basic Research   234 ( 3 )   961 - 964   2002年12月 (   ISSN:0370-1972 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    Crack-free 40 pairs of AlN/GaN multiple quantum wells (MQWs) were successfully grown by metalorganic vapor phase epitaxy using H2 as a carrier gas. From a 2θ-ω scan XRD profile of the 40-pair AlN/GaN MQWs, satellite peaks from -2nd to +1st were observed, which suggests that the MQWs form abrupt interfaces with good crystal quality. The abrupt interfaces were also confirmed by a cross-sectional transmission electron microscopy. Additionally, an excellent electrical property of the AlN(0.7 nm)/GaN(1.7 nm) MQWs with an electron mobility of 1500 cm2/Vs and a sheet electron density of 1.4 × 1013 cm-2 at room temperature was achieved. This electrical property is also an evidence of the high quality AlN/GaN MQWs.

    DOI: 10.1002/1521-3951(200212)234:3<961::AID-PSSB961>3.0.CO;2-4

  • Elimination of a back-reflected TE mode in a TM-mode optical isolator with a Mach-Zehnder interferometer 査読

    Hideki Yokoi, Tetsuya Mizumoto, Shinpei Kuroda, Takafumi Ohtsuka, Yoshiaki Nakano

    Applied Optics   41 ( 33 )   7045 - 7051   2002年11月 (   ISSN:2155-3165 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    Elimination of a back-reflected TE mode traveling in a TM-mode optical isolator was investigated. The optical isolator had a Mach-Zehnder interferometer that included a polarization-dependent reciprocal phase shifter in one of the arms. The reciprocal phase shift was achieved by an optical path difference between the two arms. By adjustment of the length of the reciprocal phase shifter, the interferometer prevented the back-reflected TE mode from coupling into an input port of the isolator. An extinction ratio of more than 18 dB was obtained against the back-reflected TE mode at a wavelength of 1.55 μm. © 2002 Optical Society of America.

    DOI: 10.1364/AO.41.007045

  • Erratum: Polarization-independent all-optical switching in a nonlinear GaInAsP-InP Highmesa waveguide with a vertically etched Bragg reflector (IEEE Journal of Quantum Electronics (July 2002) 38 (706-715)) 査読

    Seok-Hwan Jeong, Hyo-Chang Kim, Tetsuya Mizumoto, Jörg Wiedmann, Shigehisa Arai, Mitsuru Takenaka, Yoshiaki Nakano

    IEEE Journal of Quantum Electronics   38 ( 10 )   1446   2002年10月 (   ISSN:0018-9197 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1109/JQE.2002.804524

  • GaInAsP/InP directional coupler loaded with grating for optically-controlled switching 査読

    K Nakatsuhara, T Shirado, SH Jeong, T Mizumoto, M Takenaka, Y Nakano

    IEICE TRANSACTIONS ON ELECTRONICS   E85C ( 4 )   1039 - 1045   2002年4月 (   ISSN:0916-8524   eISSN:1745-1353 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG  

    All-optical switching operating at 1.55 mum band in fabricated GaInAsP directional couplers loaded with grating are reported experimentally. These switching operations were realized in spatially separated Output ports. The devices are suitable for optical integrated circuits and would operate as all-optical routing switches in practical power level by use of optical Kerr effect and Bragg grating. Using the optical bistability in the device, latching operation for output signal can be realized in spatially separated output ports and the outputs from each port are complementary. Two all-optical gate operations, which are optical inverting operation and optically controlled switching in spatially separated output ports, are also demonstrated, where the signal and control lights have different wavelength.

  • Electron cyclotron resonance-reactive ion beam etching of InP by cyclic injection of CH4/H2/Ar and O2 査読

    Tatsuya Suzuki, Nobuo Haneji, Kunio Tada, Yukihiro Shimogaki, Yoshiaki Nakano

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   41 ( 1 )   15 - 19   2002年 (   ISSN:0021-4922 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Japan Society of Applied Physics  

    Electron cyclotron resonance-reactive ion beam etching (ECR-RIBE) is very useful for fabricating semiconductor photonic devices and integrated circuits (PICs). The mixture gas of CH4/H2 is used for etching InP, but carbon polymer films deposited on the surface during the etching process suppress the etching and degrade the surface quality. Thus, the polymer films must be ashed off in O2 plasma. The authors have introduced the cyclic injection of CH4/H2/Ar and O2 to ECR-RIBE and have demonstrated that it is very useful for the etching of InP. Concerning optimized etching conditions for achieving a high etching rate and smooth etched surface, it has been shown that the etching time and the ashing time should be the same in one cycle, and that the interval times should be as short as possible. Good vertical anisotropic characteristics have been achieved by cyclic etching using a three-layer resist with a Ti layer. From photoluminescence measurements, it has also been verified that this cyclic ECR-RIBE process did not cause any serious damage.

    DOI: 10.1143/JJAP.41.15

  • Electron cyclotron resonance-reactive ion etching of III-V semiconductors by cyclic injection of CH4/H2/Ar and O2 査読

    N. Haneji, G. Segami, T. Suzuki, T. Arakawa, K. Tada, Y. Shimogaki, Y. Nakano

    2002 International Microprocesses and Nanotechnology Conference, MNC 2002   70 - 71   2002年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:Institute of Electrical and Electronics Engineers Inc.  

    In this study, we introduced constant Ar flow to the cyclic etching in order to remove the alumina layer formed during ashing intervals by the Ar ion etching, and studied the etching conditions for various III-V semiconductor materials. It was demonstrated diat the combination of the cyclic etching with/without constant Ar flow and the continuous etching is useful for etching the device structure containing multi-semiconductor layers.

    DOI: 10.1109/IMNC.2002.1178548

  • Realization of all-optical flip-flop using bistable laser diode with nonlinear directional coupler 査読

    Mitsuru Takenaka, Yoshiaki Nakano

    Conference Digest - IEEE International Semiconductor Laser Conference   121 - 122   2002年 (   ISSN:0899-9406 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

    An all-optical flip-flop device based upon a directionally-coupled (DC) bistable laser diode (BLD) was realized. The demonstration of latchable optical set/reset switching by external control light injection was presented. The characteristics of DC-BLD measured in continuous wave (CW) operation at 20°C were presented.

  • Polarization independent all-optical switching in a nonlinear GaInAsP/InP highmesa waveguide with vertically etched Bragg reflector

    S-H.Jeong, H.-C.Kim, T.Mizumoto, J.Wiedmann, S.Arai, M.Takenaka, Y.Nakano

    IEEE J. Quantum Electronics   38 ( 7 )   706 - 715   2002年 (   ISSN:0018-9197 )

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    掲載種別:研究論文(学術雑誌)  

    DOI: 10.1109/JQE.2002.1017579

  • Surface micromachining in magneto-optic waveguide with semiconductor guiding layer 査読

    H. Yokoi, T. Mizumoto, T. Sakai, T. Ohtsuka, Y. Nakano

    2002 IEEE/LEOS International Conference on Optical MEMs, OMEMS 2002 - Conference Digest   139 - 140   2002年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:Institute of Electrical and Electronics Engineers Inc.  

    A magneto-optic waveguide with a semiconductor guiding layer was studied for an optical isolator employing a nonreciprocal phase shift. Surface micromachining was investigated for enhancement of the nonreciprocal phase shift in the magneto-optic waveguide.

    DOI: 10.1109/OMEMS.2002.1031482

  • Dependence of threshold switching power on the control-light wavelength in a nonlinear distributed-feedback GaInAsP waveguide 査読

    Seok-Hwan Jeong, Katsumi Nakatsuhara, Tetsuya Mizumoto, Byong-Jin Ma, Yoshiaki Nakano

    Applied Optics   40 ( 33 )   6042 - 6048   2001年11月 (   ISSN:2155-3165 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We demonstrate all-optical bistable switching by using orthogonally and parallelly polarized control light in a nonlinear distributed feedback GaInAsP waveguide. When the control light that is orthogonally polarized to the signal light is within its stopband, it is possible to extract the signal without using any external devices. Also, we investigate theoretically and experimentally the dependence of threshold switching power on the wavelength and polarization of control light. © 2001 Optical Society of America.

    DOI: 10.1364/AO.40.006042

  • Polarisation insensitive deep-ridge vertical-groove DFB waveguide for all-optical switching 査読

    S. H. Jeong, H. C. Kim, T. Mizumoto, J. Wiedmann, S. Arai, M. Takenaka, Y. Nakano

    Electronics Letters   37 ( 23 )   1387 - 1389   2001年11月 (   ISSN:0013-5194 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    A deep-ridge vertical-groove distributed feedback (DFB) waveguide has been fabricated. Structural birefringence of the fabricated device was completely eliminated by controlling waveguide width. Additionally, polarisation independence of the grating coupling coefficient was accomplished by adjusting grating depth.

    DOI: 10.1049/el:20010966

  • Deep-ridge distributed feedback waveguide for polarisation independent all-optical switching 査読

    S. H. Jeong, T. Mizumoto, K. Nakatsuhara, M. Takenaka, Y. Nakano

    Electronics Letters   37 ( 8 )   498 - 499   2001年4月 (   ISSN:0013-5194 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    Structural birefringence in a deep-ridge distributed feedback (DFB) waveguide for polarisation independent all-optical switching is investigated. The coupling coefficient of the DFB structure is also polarisation independent between the TE and TM modes.

    DOI: 10.1049/el:20010326

  • Selective oxidation for enhancement of magneto-optic effect in optical isolator with semiconductor guiding layer 査読

    H. Yokoi, T. Mizumoto, H. Masaki, N. Futakuchi, T. Ohtsuka, Y. Nakano

    Electronics Letters   37 ( 4 )   240 - 241   2001年2月 (   ISSN:0013-5194 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEE  

    Selective oxidation of an AlInAs layer grown on an InP substrate is studied with a view to enhancing the magneto-optic effect in an optical isolator with a semiconductor guiding layer. The isolator operates with a nonreciprocal phase shift in a magneto-optic waveguide. The waveguide with an AlInAs oxide cladding layer miniaturises the nonreciprocal phase shifter to several hundreds of microns.

    DOI: 10.1049/el:20010145

  • All-optical hysteresis control by means of cross-phase modulation in semiconductor optical amplifiers 査読

    Drew N. Maywar, Govind P. Agrawal, Yoshiaki Nakano

    Journal of the Optical Society of America B: Optical Physics   18 ( 7 )   1003 - 1013   2001年 (   ISSN:0740-3224 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Optical Society of America (OSA)  

    We describe the principle of operation of an all-optical flip-flop based on dispersive bistability in a distributed feedback semiconductor optical amplifier. Cross-phase modulation controls the photonic bandgap and Bragg resonances of the amplifier, thereby shifting the hysteresis and switching thresholds to higher or lower powers. We give the details of a simple theoretical model that is used to simulate the set and reset operations. We also experimentally investigate the dependence on set-signal power and the response to back-to-back set signals, and we apply the theoretical model to understand these experimental results. © 2001 Optical Society of America.

    DOI: 10.1364/JOSAB.18.001003

  • Demonstration of optically-controlled switching in nonlinear directional coupler loaded with grating 査読

    K Nakatsuhara, T Mizumoto, T Shirado, SH Jeong, M Takenaka, Y Nakano

    ECOC'01: 27TH EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION, VOLS 1-6   398 - 399   2001年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    All-optical switching between two output ports using two different wavelengths, one for the signal and one,for the control light, has been implemented in a GaInAsP nonlinear directional coupler loaded with grating.

  • Contact angle measurement of wafer surfaces for integrating laser diode and optical isolator by wafer bonding 査読

    H Yokoi, T Mizumoto, M Shimizu, T Waniishi, N Futakuchi, N Kaida, Y Nakano

    SEMICONDUCTOR WAFER BONDING: SCIENCE, TECHNOLOGY, AND APPLICATIONS V, PROCEEDINGS   99 ( 35 )   311 - 317   2001年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:ELECTROCHEMICAL SOCIETY INC  

    An optical isolator with a semiconductor guiding layer is fabricated by wafer bonding technique. A magnetic garnet cladding layer is contacted with the GaInAsP guiding layer by wafer bonding. GaInAsP surfaces with various treatments were analyzed by contact-angle measurement for wafer bonding between GaInAsP and garnet crystals. The most hydrophilic GaInAsP surface was obtained after an O-2 plasma activation process. Wafer bonding was successfully achieved between GaInAsP rib waveguides activated by O-2 plasma and magnetic garnets.

  • Self-align electrode separation of directionally coupled semiconductor optical amplifier 査読

    M Takenaka, M Saitoh, Y Nakano

    ACTIVE AND PASSIVE OPTICAL COMPONENTS FOR WDM COMMUNICATION   4532   361 - 368   2001年 (   ISSN:0277-786X )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:SPIE-INT SOC OPTICAL ENGINEERING  

    We have demonstrated the self-align electrode separation technique for directionally coupled semiconductor optical amplifiers (DC-SOA). Using oblique electron-beam evaporation, the electrodes between the coupled waveguides of the DC-SOA were separated without any lithography. We have obtained isolation resistance between the electrodes of about 130 Omega, and satisfactory L-I characteristics of the DC-SOA were measured. We have also shown all-optical flipflop operation using the electrode separated DC-SOA by numerical analysis, and the lasing threshold current control by optical injection was experimentally demonstrated, thus confirming the possibility of all-optical flip-flop operation.

  • Variable mux/demux time division photonic switching network using optical time jumper 査読

    Tadahiko Yasui, Yoshiaki Nakano

    Electronics and Communications in Japan, Part I: Communications (English translation of Denshi Tsushin Gakkai Ronbunshi)   84 ( 9 )   1 - 15   2001年 (   ISSN:8756-6621 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Scripta Technica Inc.  

    A pulse can be viewed as a kind of memory with faster processing elements, because the information carried by the pulse can be read out at any time by the faster processing elements. Taking this into consideration, one of the authors proposed a TDM switching system which in principle requires no random access memories, but rather only logical gates. This is very much suited to the photonic TDM switching system, as optical RAMs are not as yet available. This paper newly proposes a photonic TDM switching system in which a time jumper is placed on a highway link connecting multistage variable multiplexer and multistage variable demultiplexer. It discusses the system concept, jumpering algorithm, jumper configuration, traffic characterization of the system, optimal system configuration, and finally applications of the system. The characteristics in terms of cost/erl are better than those of the system proposed before.

    DOI: 10.1002/ecja.1036.abs

  • All-Optical Switching for Future Fiber-Optic Communication System ((放送方式、放送現業、無線・光伝送)2000 Asia-Pacific Symposium on Broadcasting and Communications) 査読

    Mizumoto T., Nakatsuhara K., Jeong S.H., SHIRADO T., NAKANO Y.

    映像情報メディア学会技術報告   24 ( 81 )   189 - 192   2000年12月 (   ISSN:1342-6893 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:一般社団法人映像情報メディア学会  

    All-optical switching devices, which do not need E/O and/or O/E conversion and hence are not limited by the switching speed of electronics, are expected to play important roles in realizing the ultra-high speed processing. All-optical waveguide switching devices that utilize t1he optical Kerr effect of III-V semiconductor is reported.

    DOI: 10.11485/itetr.24.81.0_189

  • Kinetic study of P and As desorption from binary and ternary III-V semiconductors surface by in situ ellipsometry 査読

    O Feron, Y Nakano, Y Shimogaki

    JOURNAL OF CRYSTAL GROWTH   221   129 - 135   2000年12月 (   ISSN:0022-0248 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:ELSEVIER SCIENCE BV  

    In order to enhance the understanding of surface processes involved in MOCVD, the desorption of As and P from the (001) surface of binary and ternary III-V semiconductors was studied by in situ ellipsometry. The variations of ellipsometric parameters as a function of time give the group V desorption rate constant and Arrhenius laws were determined for all the materials. The evolution of activation energies suggests that these are influenced by the surface bond strengths. These kinetic data are essential for the control of heterostructures growth and the construction of numerical model devoted to the growth of InGaAsP. The study also suggests some specific surface reconstructions, especially in the case of the GaAs As-rich surface which probably adopts a c (4 x 4)-like structure for T greater than or equal to 625 degreesC and P-TBAs = 2 Pa and would present an As excess over the c (4 x 4) structure for T less than or equal to 600 degreesC. (C) 2000 Elsevier Science B.V. All rights reserved.

  • Demonstration of an optical isolator with a semiconductor guiding layer that was obtained by use of a nonreciprocal phase shift 査読

    Hideki Yokoi, Tetsuya Mizumoto, Nobuhiro Shinjo, Naoki Futakuchi, Yoshiaki Nakano

    Applied Optics   39 ( 33 )   6158 - 6164   2000年11月 (   ISSN:2155-3165 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We present the experimental study of an optical isolator with a semiconductor guiding layer that was obtained by use of a nonreciprocal phase shift. The isolator is equipped with an optical interferometer composed of tapered couplers, nonreciprocal phase shifters, and a reciprocal phase shifter. The nonreciprocal phase shifter was constructed by wafer direct bonding between the semiconductor guiding layer and the magneto-optic cladding layer. The isolator, designed for the 1.55-mm wavelength, was fabricated to investigate the characteristics of each component. By applying an external magnetic field to the nonreciprocal phase shifter, we achieved an isolation ratio of approximately 4.9 dB in the interferometric isolator. © 2000 Optical Society of America.

    DOI: 10.1364/AO.39.006158

  • Organic solid-state distributed feedback dye laser with a nonmorphological modification grating 査読

    Michifumi Nagawa, Musubu Ichikawa, Toshiki Koyama, Hirofusa Shirai, Yoshio Taniguchi, Akihito Hongo, Shinji Tsuji, Yoshiaki Nakano

    Applied Physics Letters   77 ( 17 )   2641 - 2643   2000年10月 (   ISSN:0003-6951 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:American Institute of Physics Inc.  

    We report an organic solid-state distributed feedback laser consisting of an organic active layer and a Bragg grating without morphological change. The active layer consists of 4-(dicyanomethylene)-2-methyl-6-(4-dimethylaminostryl)-4H-pyran as a laser dye, tris(8-hydroxyquinoline) aluminum as a host, and poly(methyl methacrylate) as a binder. The threshold and linewidth of the laser are 400 μJ/cm2 and 1.5 nm, respectively. With this laser, the Bragg grating exists out of the active layer and the grating surface is flat, which are very important for device fabrication and electric driving of the laser. © 2000 American Institute of Physics.

    DOI: 10.1063/1.1320034

  • Static and dynamic characteristics analysis of all-optical wavelength conversion using directionally coupled semiconductor optical amplifiers 査読

    Masumi Saitoh, Byongjin Ma, Yoshiaki Nakano

    IEEE Journal of Quantum Electronics   36 ( 8 )   984 - 990   2000年8月 (   ISSN:0018-9197 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEEE  

    We analyze the wavelength-converting operation of directionally coupled semiconductor optical amplifiers (DCSOA's) with respect to their static and dynamic characteristics. A complete dynamic DCSOA model based on the modified time-dependent transfer-matrix method is developed. This model accurately considers longitudinal variations of carrier and photon densities, gain, refractive index, coupling coefficients, and lateral optical fields. The extinction ratio, modulation bandwidth, and frequency chirping of DCSOA-based wavelength converters are investigated. For most characteristics, the DCSOA scheme has advantages over cross-gain modulation. Furthermore, by optimizing the injection current into the DCSOA, even better performance can be attained.

    DOI: 10.1109/3.853560

  • 1.31-to-1.55 μm wavelength conversion by optically pumping a distributed feedback amplifier 査読

    Drew N. Maywar, Yoshiaki Nakano, Govind P. Agrawal

    IEEE Photonics Technology Letters   12 ( 7 )   858 - 860   2000年7月 (   ISSN:1041-1135 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEEE  

    We demonstrate a new technique for all-optical wavelength conversion to 1.55 μm by using a 1.3-μm signal that directly pumps a distributed feedback semiconductor optical amplifier. Data polarity can be selected by tuning the probe wavelength to different regions of the Bragg resonance. Polarity-inverted signals exhibit a digital-like transfer function with an on-off ratio of 4 and 2.4 at 155.5 and 622 Mb/s, respectively. This simple wavelength-conversion scheme is insensitive to the direction and polarization of the 1.31-μm signal, and should be affordable for local access and other cost-sensitive optical-network layers.

    DOI: 10.1109/68.853526

  • MOCVD of InGaAsP, InGaAs and InGaP over InP and GaAs substrates: distribution of composition and growth rate in a horizontal reactor 査読

    O Feron, M Sugiyama, W Asawamethapant, N Futakuchi, Y Feurprier, Y Nakano, Y Shimogaki

    APPLIED SURFACE SCIENCE   159   318 - 327   2000年6月 (   ISSN:0169-4332 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:ELSEVIER SCIENCE BV  

    In order to build a numerical model for the growth of ternary (InGaAs, InGaP) or quaternary materials (InGaAsP), data on growth rate and composition distributions in a horizontal reactor have been collected. Samples were grown from trimethylindium, trimethylgallium, tert-butylarsine and tert-butylphosphine. Composition analyses were carried out by X-ray photoelectron spectroscopy. The results are discussed in relation to preliminary simulation works and a linear combination model based on experimental data for binary materials growth. The study enhances the understanding of growth mechanisms. Henceforth, modelling of InGaAsP growth seems possible but accurate simulation should take into account multicomponent diffusion and the enhancement of precursors' decomposition occurring while mixed. (C) 2000 Elsevier Science B.V. All rights reserved. PACS: 81.05.Ea; 81.15.Gh; 81.70.Jb; 82.80.Pv; 82.30.-b.

  • GaInAsP-InP distributed feedback waveguides for all-optical switching 査読

    Katsumi Nakatsuhara, Tetsuya Mizumoto, Sainul Hossain, Seok-Hwan Jeong, Yukio Tsukishima, Byong-Jin Ma, Yoshiaki Nakano

    IEEE Journal on Selected Topics in Quantum Electronics   6 ( 1 )   143 - 149   2000年1月 (   ISSN:1077-260X )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEEE  

    All-optical switching characteristics of waveguide devices having a nonlinear distributed feedback structure are reported theoretically and experimentally. These devices were composed of a strip-loaded GaInAsP-InP waveguide and a Bragg reflector, which were suitable for optical integrated circuit. In the experiments, all-optical and gate operation and set-reset operation for two output ports were successfully demonstrated.

    DOI: 10.1109/2944.826882

  • An experimental and numerical study of the composition distribution of InGaAsP quaternary materials in a horizontal MOCVD reactor 査読

    O Feron, M Sugiyama, Y Nakano, Y Shimogaki

    2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS   368 - 371   2000年 (   ISSN:1092-8669 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    A model was developed that enabled the simulation of composition and growth rate distributions of InGaAsP layers in a horizontal reactor. The model is based on kinetic data assessed by in-situ ellipsometry and FTIR spectrometry.

  • All-optical switching characteristics in nonlinear directional coupler loaded with Bragg reflector 査読

    Katsumi Nakatsuhara, Tetsuya Mizumoto, Seok Hwan Jeong, Takashi Shirado, Byong Jin Ma, Yoshiaki Nakano

    IEEE Nonlinear Optics: Materials, Fundamentals and Applications - Conference Proceedings   129 - 131   2000年

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEEE  

    All-optical switching characteristics in a nonlinear directional coupler loaded with a Bragg reflector are reported experimentally. In the experiments, all-optical switching with separate signal and control wavelengths was also successfully demonstrated.

  • All-optical switching with separate wavelengths for probe and control in nonlinear directional coupler loaded with Bragg reflector 査読

    K Nakatsuhara, T Mizumoto, T Shirado, SH Jeong, BJ Ma, Y Nakano

    LEOS 2000 - IEEE ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS. 1 & 2   698 - 699   2000年 (   ISSN:1092-8081 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

  • Dependence of control light wavelength in all-optical switching of nonlinear strip-loaded distributed feedback waveguide 査読

    SH Jeong, K Nakatsuhara, T Mizumoto, BJ Ma, Y Nakano

    LEOS 2000 - IEEE ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS. 1 & 2   663 - 664   2000年 (   ISSN:1092-8081 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

  • Decrease in deposition rate and improvement of step coverage by CF4 addition to plasma-enhanced chemical vapor deposition of silicon oxide films 査読

    Sang Woo Lim, Yukihiro Shimogaki, Yoshiaki Nakano, Kunio Tada, Hiroshi Komiyama

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   39 ( 1 )   330 - 336   2000年 (   ISSN:0021-4922 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:JJAP  

    The low dielectric constant of F-doped silicon dioxide film makes it suitable for use as an intermetal film to improve the performance of ultra-large scale integrated circuits (ULSIs). One of the properties required by an intermetal film is good gap filling. It is known that fluorine addition to silicon oxide decreases the film deposition rate and improves the step coverage. In order to investigate these phenomena, we study the reaction mechanism of plasma-enhanced chemical vapor deposition (PECVD) silicon oxide film and its change by fluorine addition. Using a two film-forming species model, we explain the dependence of the deposition rate and the step coverage on the residence time for a SiH4/N2O-based PECVD system. The precursor produced by the dissociation of SiH4 has a relatively high sticking probability (≈0.5), while an intermediate species has a low (&lt
    10-4) sticking probability. The concentration of each species for deposition is changed by the residence time of the gas, thus the deposition rate and the step coverage show dependence on the residence time. The deposition rate of silicon oxide films is decreased and the step coverage is improved by CF4 addition during SiH4/N2O-based PECVD. From the estimation of the sticking probability, we suggest that the reason for the improvement of the step coverage by fluorine addition is not the etching effect by CF4 addition, but the decrease in sticking probability of the precursor produced by the dissociation of SiH4.

    DOI: 10.1143/JJAP.39.330

  • Demonstration of all-optical switching with orthogonally-polarized control and signal light 査読

    SH Jeong, K Nakatsuhara, T Mizumoto, BJ Ma, Y Nakano

    NONLINEAR OPTICS: MATERIALS, FUNDAMENTALS, AND APPLICATIONS   46   165 - 167   2000年 (   ISSN:1094-5695 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:OPTICAL SOC AMERICA  

    All-optical switching with orthogonally-polarized control and signal light and its wavelength dependence characteristics of the control light are discussed in the fabricated GaInAsP nonlinear distributed feedback waveguide. (C)1999 Optical Society of America.

  • Kinetics of GaAs metalorganic chemical vapor deposition studied by numerical analysis based on experimental reaction data 査読

    Masakazu Sugiyama, Olivier Feron, Sinya Sudo, Yoshiaki Nakano, Kunio Tada, Hiroshi Komiyama, Yukihiro Shimogaki

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   39 ( 4 A )   1642 - 1649   2000年 (   ISSN:0021-4922 )

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    掲載種別:研究論文(学術雑誌)  

    In order to develop a computer-assisted process optimization of In1-xGaxAs1-y metalorganic chemical vapor deposition (MOCVD), the kinetics of GaAs growth was studied as the first step. For the accumulation of reaction data of source materials, the decomposition rates of trimethylgallium (TMGa) and tertiarybutylarsine (TBAs) were studied using a flow tube reactor and a Fourier transform infrared spectrometer (FT-IR). Special attention was paid to the effect of TBAs concentration on the decomposition rates of TMGa. The GaAs growth rate profile in a commercial MOCVD reactor was analyzed through both experiment and simulation. The profile was dependent on the gas velocity and total pressure. This dependency was explained by a reaction model which was deduced from the experimental observations: TMGa decomposes to a gas-phase intermediate which subsequently forms the GaAs film. The fluid dynamic calculations combined with this reaction model led to growth rate distributions which agreed well with the experimental data. The analysis revealed that the GaAs growth rate is limited by the gas-phase reactions of TMGa as well as the mass-transport of the intermediates, and that precise measurement of the reaction between TMGa and TBAs is essential for an accurate simulation. © 2000 The Japan Society of Applied Physics.

    DOI: 10.1143/jjap.39.1642

  • Robust optical control of an optical-amplifier-based flip-flop 査読

    D. N. Maywar, G. P. Agrawal, Y. Nakano

    Optics Express   6 ( 3 )   75 - 80   2000年 (   ISSN:1094-4087 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Optical Society of America (OSA)  

    We demonstrate new optical techniques for externally controlling the latchable output power of a semiconductor-optical-amplifier-based flip-flop. Optical 'set' and 'reset' signals increase and decrease the refractive index, respectively, via cross-phase modulation (XPM). Set signals, which deplete the carrier density, have wavelengths between 1533 and 1568 nm, and powers as low as 22 μW. Reset is performed with carrier-generating 'positive' optical pulses at 1306 and 1466 nm, and minimum powers below 1 mW. These techniques are useful for digital optical-processing functions such as bit-length conversion, retiming, and demultiplexing. © 2000 Optical Society of America.

    DOI: 10.1364/OE.6.000075

  • X-ray CTR scattering measurement of InP/InGaAs/InP interface structures fabricated by different growth processes 査読

    M. Tabuchi, R. Takahashi, M. Araki, K. Hirayama, N. Futakuchi, Y. Shimogaki, Y. Nakano, Y. Takeda

    Applied Surface Science   159   250 - 255   2000年 (   ISSN:0169-4332 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Elsevier Science Publishers B.V.  

    Hetero-interfaces of InP/InGaAs (three monolayers (ML))/InP samples grown by organometallic vapor phase epitaxy (OMVPE) were investigated using X-ray crystal truncation rod (CTR) measurement. The samples were prepared with three different source-gas flow-sequences: (a) conventional sequence, (b) growth interruption, and (c) Ga and In source-gas pulse injection. The results of the X-ray CTR measurement showed that the interfaces between InP cap and InGaAs layers of (b) and (c) were sharper than that of (a) as intended. However, the amount of As in (b) was less than that designed since As atoms desorbed even from the InGaAs layer during the growth interruption. Surprisingly, the Ga atoms distributed wider and peak compositions of Ga were smaller than those designed for all the samples. It means that the quantum well structures are far from those designed and expected. It suggests that more efforts are necessary to control the distribution of group-III atoms after we solved the problem of group-V atom distributions.

    DOI: 10.1016/S0169-4332(00)00041-6

  • V溝GaAs基板上に作製したInGaAs量子細線の分布帰還による選択的発振 査読

    戸田 知朗.フランク, ラインハルト, エリック マルティネ, エリ カポン, 中野義昭

    IEEE Photonics Technology Letters   11 ( 12 )   1530 - 1532   1999年12月 (   ISSN:1041-1135 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    DOI: 10.1109/68.806835

  • Changes in orientational polarization and structure of silicon dioxide film by fluorine addition 査読

    Sang Woo Lim, Yukihiro Shimogaki, Yoshiaki Nakano, Kunio Tada, Hiroshi Komiyama

    Journal of the Electrochemical Society   146 ( 11 )   4196 - 4202   1999年11月 (   ISSN:0013-4651 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Electrochemical Soc Inc  

    Use of F-doped silicon dioxide (SiO2) film as a low dielectric constant intermetal film for ultralarge scale integrated circuits (ULSI) is useful from the viewpoint of product cost and compatibility with present processing technologies. By adding CF4 to SiH4/N2O plasma-enhanced chemical vapor deposition, we obtained F-doped SiO2 films with a dielectric constant as low as 2.6. The mechanism behind this decrease was investigated by estimating the dielectric constants due to the polarization components using capacitance-voltage measurements, Kramers-Kronig transformation, and spectroscopic ellipsometry. Fluorine addition lowers the orientational polarization by decreasing the number of -OH bonds, and this decrease in Si-OH concentration is a key factor which is responsible for the lower dielectric constant in the F-doped SiO2 film. Orientational polarization due to the Si-OH bond disappears in the far infrared with increasing frequency, thus the dielectric constant is composed only of ionic and electronic polarization components in the frequency range beyond the far infrared. The quantitative analysis of fluorine and OH shows that excess Si-F bonds replace Si-O and form Si-F2. We suggest that the water absorption for F-doped SiO2 film can be minimized by suppressing fluorine addition at the time that the Si-OH bonds vanish in order to avoid forming Si-F2 and destroying the threefold rings.

    DOI: 10.1149/1.1392614

  • All-optical bistable switching in nonlinear directional coupler loaded with Bragg reflector 査読

    K. Nakatsuhara, S. Hossain, T. Mizumoto, Seok-Hwan Jeong, Byong-Jin Ma, Y. Nakano

    Electronics Letters   35 ( 15 )   1243 - 1244   1999年7月 (   ISSN:0013-5194 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEE  

    A GaInAsP nonlinear directional coupler loaded with a Bragg reflector has been fabricated. All-optical bistable switching in the fabricated device is demonstrated at a wavelength of 1.55μm.

    DOI: 10.1049/el:19990866

  • All-optical switching in a distributed-feedback GaInAsP waveguide 査読

    Katsumi Nakatsuhara, Tetsuya Mizumoto, Eiji Takahashi, Sainul Hossain, Yoshikazu Saka, Byong-Jin Ma, Yoshiaki Nakano

    Applied Optics   38 ( 18 )   3911 - 3916   1999年6月 (   ISSN:2155-3165 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    The characteristics of all-optical switching in a waveguide device with a distributed-feedback structure were experimentally investigated. The device was composed of a strip-loaded GaInAsPyInP waveguide and a distributed-feedback structure, which was fabricated by a combination of reactive-ion etching and electron-beam exposure. In the experiments, several optical switching operations were demonstrated. In particular, the all-optical set–reset operation and threshold operation were obtained. © 1999 Optical Society of America.

    DOI: 10.1364/AO.38.003911

  • Reduction of second- and third-order harmonic distortion by nonlinear absorption in gain-coupled distributed-feedback laser diodes 査読

    Naoki Futakuchi, Tomoyuki Taguchi, Yoshiaki Nakano

    IEEE Journal on Selected Topics in Quantum Electronics   5 ( 3 )   463 - 468   1999年5月 (   ISSN:1077-260X )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEEE  

    We have calculated the characteristics of second- and third-order harmonic distortion in gain-coupled distributed-feedback (DFB) lasers using a set of three rate equations. In these calculations, the relaxation oscillation, nonlinear gain compression, and nonlinear loss compression are taken into account. We have found that modulation distortion due to nonlinear gain compression is reduced significantly in the gain-coupled DFB laser of absorptive-grating type. This improvement occurs because gain compression is compensated by loss compression within the grating.

    DOI: 10.1109/2944.788406

  • マストランスポート法によるInAsP量子細線DFBレーザの室温パルス発振

    戸田 知朗, 中野 義昭

    IEEE Proc. of 11th International Conference on Indium Phosphide and Related Materials   ( MoA1-2 )   1999年5月

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    掲載種別:研究論文(学術雑誌)  

  • V溝基板上のInAsP/InP量子細線DFBレーザの1.5um室温発振

    戸田 知朗, 中野 義昭

    The 3rd symposium on Atomic-Scale Surface and Interface Dynamics   1999年3月

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    掲載種別:研究論文(学術雑誌)  

  • Realization of All-Optical Wavelength Converter Based on Directionally Coupled Semiconductor Optical Amplifiers 査読

    Byongjin Ma, Yoshiaki Nakano

    IEEE Photonics Technology Letters   11 ( 2 )   188 - 190   1999年2月 (   ISSN:1041-1135 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We propose a novel all-optical wavelength converter based on directionally coupled (DC) semiconductor optical amplifiers (SOA) and simulate its characteristics using a simple model to find out such advantages as extinction enhancement and digital response. We then fabricate devices in the 1.55-μm band, and successfully demonstrate the wavelength conversion operation with the above-mentioned advantages. Very compact size and no need of active/passive integration are other significant merits of DC SOA's.

    DOI: 10.1109/68.740699

  • All-optical switching device with two output ports 査読

    Katsumi Nakatsuhara, Sainul Hossain, Tetsuya Mizumoto, Seok-Hwan Jeong, Yukio Tsukishima, Byon-Jing Ma, Yoshiaki Nakano

    Journal of the Communications Research Laboratory   46 ( 3 )   349 - 351   1999年 (   ISSN:0914-9260 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    All-optical set-reset operation has been demonstrated in a nonlinear DFB waveguide. The DFB structure can be further applied to a nonlinear directional coupler, which would operate as an all-optical routing device.

  • Demonstration of all-optical AND gate operation in a GaInAsP waveguide 査読

    K. Nakatsuhara, S. H. Jeong, Y. Tsukishima, T. Mizumoto, B. J. Ma, Y. Nakano

    CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics   3   704 - 705   1999年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:Institute of Electrical and Electronics Engineers Inc.  

    In the present paper an all-optical AND gate operation in a nonlinear DFB waveguide monolithically integrated with a Y-coupler is reported. It is concluded that the device does exhibit optical AND gate operation due to the intensity-dependent nonlinearity.

    DOI: 10.1109/CLEOPR.1999.817791

  • Contact angle measurement of GaInAsP surfaces for wafer direct bonding with garnet crystals 査読

    H. Yokoi, T. Mizumoto, M. Shimizu, T. Waniishi, N. Futakuchi, N. Kaida, Y. Nakano

    CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics   4   1206 - 1207   1999年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:Institute of Electrical and Electronics Engineers Inc.  

    GaInAsP surfaces were investigated by contact angle measurement of a water droplet to estimate their hydrophilicity. The most hydrophilic surface of GaInAsP was obtained by the O2 plasma activation process. Wafer direct bonding was successfully achieved between O2 plasma activated GaInAsP and garnet crystals.

    DOI: 10.1109/CLEOPR.1999.814737

  • Control of chirp parameter in electroabsorption modulators by destgning asymmetric triple coupled quantum well structure 査読

    Masaki Kato, Reiko Touda, Yoshiaki Nakano

    CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics   3   1046 - 1047   1999年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:Institute of Electrical and Electronics Engineers Inc.  

    The external modulator is a key device for long-haul, high-speed optical transmission systems. In such systems the product of the square of bit rate and the transmission length is limited by the modulator's chirp parameter and the fiber dispersion
    the optimum chirp parameters for conventional silica fiber and dispersion-shifted fiber are -1 and 0, respectively. However, most multiple-quantum-well electroabsorption (MQW-EA) modulators produce positive chirp parameter. In this paper, we theoretically show that the chirp parameter is controllable through well width of the asymmetric triple coupled quantum well (ATCQW).

    DOI: 10.1109/CLEOPR.1999.817964

  • Coupling characteristics of three-guide tapered coupler for integrated optical isolator with semiconductor guiding layer 査読

    H. Yokoi, T. Mizumoto, N. Shinjo, N. Futakuchi, N. Kaida, Y. Nakano

    CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics   4   1204 - 1205   1999年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:Institute of Electrical and Electronics Engineers Inc.  

    The characteristics of the three-guide tapered coupler for an integrated optical isolator with a semiconductor guiding layer (GaInAsP) were experimentally studied. By the experiment for measuring power branching ratio, the unbalance of the ratio smaller than 2% was confirmed for wavelengths ranging between 1.50 and 1.58 μm. The coupling to the central waveguide occurred when two light waves in the side waveguides were in phase. No output was coupled to the central waveguide when they were 180° out of phase. The isolation of more than 17dB will be achieved when the coupler is employed in the isolator.

    DOI: 10.1109/CLEOPR.1999.814736

  • Directionally-coupled semiconductor optical amplifier for all-optical digital wavelength conversion 査読

    Byongjin Ma, Y. Nakano

    CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics   4   1161 - 1162   1999年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:Institute of Electrical and Electronics Engineers Inc.  

    The all-optical wavelength conversion gives flexibilities to the optical fiber communication networks, especially to the wavelength-division-multiplexed (WDM)-based ones, because it allows them to reuse wavelengths and to avoid wavelength channel contentions. Recently, we proposed a novel cross-phase modulation (XPM) wavelength converter that had a directionally-coupled semiconductor optical amplifier (DCSOA) structure, and reported its preliminary results of simulation, in which several unique wavelength conversion characteristics, such as improved extinction ratio, digital-like input-output response, and possibility of polarity-non-inverted wavelength conversion, were predicted. We then fabricated the devices and characterized their static wavelength conversion, where we confirmed the digital response and the extinction ratio enhancement in practice. We present an extremely large nonlinear gain found in the DC SOA, that can potentially be utilized for non-inverted wavelength conversion and digital optical processing. Devices were fabricated by using 1.55 μm InGaAsP/lnP multiple quantum wells grown by metal-organic vapor phase epitaxy and by using an optimized self-aligned processes.

    DOI: 10.1109/CLEOPR.1999.814713

  • Feasibility of integrated optical isolator with semiconductor guiding layer fabricated by wafer direct bonding 査読

    H. Yokoi, T. Mizumoto, N. Shinjo, N. Futakuchi, N. Kaida, Y. Nakano

    IEE Proceedings: Optoelectronics   146 ( 2 )   105 - 110   1999年 (   ISSN:1350-2433 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEE  

    An integrated optical isolator, employing a nonreciprocal phase shift, fabricated by wafer direct bonding technique is proposed. The optical isolator has an optical interferometer, which is composed of two tapered couplers, nonreciprocal phase shifters in two arms and a reciprocal phase shifter in one of the arms. The magneto-optic waveguide in the nonreciprocal phase shifter has a magnetic garnet/GaInAsP/InP structure, which is realized by the direct bonding technique. The theoretical and experimental results of the components for the isolator are demonstrated to investigate the feasibility of this device.

    DOI: 10.1049/ip-opt:19990446

  • Longitudinal distribution analysis of InP growth in a horizontal MOVPE reactor for improved film quality 査読

    W. Asawamethapant, M. Sugiyama, Y. Shimogaki, Y. Nakano

    Conference Proceedings - International Conference on Indium Phosphide and Related Materials   55 - 58   1999年 (   ISSN:1092-8669 )

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    掲載種別:研究論文(学術雑誌)  

    We have investigated the longitudinal distribution of InP growth rate and film quality over the entire susceptor of a horizontal MOVPE with TMIn and TBP to understand cause of film roughness and to improve the film quality. We studied the effects of source gas velocity, growth temperature, and V/III ratio. From these observations, we propose a reaction model to explain the cause of the film roughness. Based on this model, we could optimize the growth condition; by decreasing total pressure, and thereby enhancing the diffusion of precursors to suppress InP polymerization in gas phase, the film quality has been very much improved.

  • Proposal of a novel semiconductor optical waveguide isolator 査読

    Mitsuru Takenaka, Yoshiaki Nakano

    Conference Proceedings - International Conference on Indium Phosphide and Related Materials   289 - 292   1999年 (   ISSN:1092-8669 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEEE  

    A novel semiconductor optical waveguide isolator is proposed and analyzed. The proposed isolator has semiconductor optical amplifier (SOA) structure with a ferromagnetic metal (iron or nickel, for example) deposited on top for providing the magneto-optical effect as well as electrical contact. By nonreciprocal complex effective refractive index change through the magneto-optical effect and by appropriate current injection into SOA, only the backward-propagating light is to become subject to optical loss. The amount of nonreciprocal complex effective refractive index change has been estimated by a perturbation method. Wavelength dispersion and tolerance of fabrication errors have also been calculated. As a result the isolator is predicted to have practical isolation ratio (40 dB) with compact size (1.58 mm) at 1.55 μm wavelength, wide operation wavelength range, and large fabrication tolerance.

  • Laterally coupled strained MQW ridge waveguide distributed-feedback laser diode fabricated by wet-dry hybrid etching process 査読

    Yoshiaki Watanabe, Nong Chen, Kiyoshi Takei, Kiyofumi Chikuma, Naoki Futakuchi, Yoshiaki Nakano

    IEEE Photonics Technology Letters   10 ( 12 )   1688 - 1690   1998年12月 (   ISSN:1041-1135 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    The fabrication and the characteristics of the laterally coupled GaInAsP-InP quantum-well ridge waveguide distributed-feedback (DFB) lasers are presented. The electron beam (EB) lithography and the wet and dry hybrid etching technique have been used to fabricate the deep grating structures for the DFB lasers on and beside the sidewalls of the narrow ridge waveguide. The threshold current was 18.5 mA at 20 °C, and the sidemode suppression ratios (SMSR's) were ensured to be more than 40 dB for as-cleaved devices with various cavity lengths. The continuous-wave output powers of over 15 mW/facet have been observed, while transverse and longitudinal modes have remained in single mode at this output level.

    DOI: 10.1109/68.730470

  • Field-induced optical effect in a five-step asymmetric coupled quantum well with modified potential 査読

    Hao Feng, J. P. Pang, M. Sugiyama, Kunio Tada, Yoshiaki Nakano

    IEEE Journal of Quantum Electronics   34 ( 7 )   1197 - 1207   1998年7月 (   ISSN:0018-9197 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    A five-step asymmetric coupled quantum well (FACQW) is demonstrated and analyzed for its field-induced optical effect. A strong combined exciton absorption peak is caused by e1hh2 and e2hh1 transitions for the TE mode and e1lh2 and e2lh1 for the TM mode at a small negative applied electric field, while two separated exciton absorption peaks appear at positive applied electric field. The large change of the exciton absorption strength produces large positive refractive index change whose value is larger by over one order of magnitude compared to that in a rectangular quantum well (RQW) when the operation wavelength is away from the absorption edge. A tensile-strained FACQW is employed to improve the polarization dependence. The difference of the refractive index change for TE and TM modes is under 2% while that in the unstrained FACQW is larger than 50%. A modified FACQW structure is also studied for a negative refractive index change. The strong combined exciton absorption peak without a red shift is observed in the measurement of photocurrent spectra of the FACQW at room temperature. The absorption properties of the FACQW under high applied electric held are also observed and analyzed. The measured results are in good agreement with our numerical analysis. Finally, ridge-waveguide Mach-Zehnder modulators have been fabricated by using the FACQW and RQW structures. The half-wave voltage of the FACQW modulator is as low as 3 V while that of the RQW modulator is 8 V. The result proves that the FACQW structure indeed has larger refractive index change than that of the RQW structure. These properties obtained with the FACQW family have a great potential for application to ultrafast and low-voltage optical modulators and switches.

    DOI: 10.1109/3.687863

  • In-situ As-P exchange monitoring in metal-organic vapor phase epitaxy of InGaAs/InP heterostructure by spectroscopic and kinetic ellipsometry 査読

    Shinya Sudo, Yoshiaki Nakano, Masakazu Sugiyama, Yukihiro Shimogaki, Hiroshi Komiyama, Kunio Tada

    Thin Solid Films   313-314   604 - 608   1998年2月 (   ISSN:0040-6090 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Elsevier  

    In InGaAs/InP heterostructures, interdiffusion of arsenic and phosphorus at the hetero-interfaces during epitaxial growth degrades the interface abruptness. This is a serious problem when a very thin InGaAs/InP quantum well is required. In this paper, spectroscopic and kinetic ellipsometry are used to monitor the As-P exchange in-situ in metal-organic vapor phase epitaxy (MOVPE) with TBAs and TBP as the group V precursors. As a result, it is found that the monitoring of As-P exchange is possible by kinetic ellipsometry and that useful information for improving the gas switching sequence is acquired from such observations. Information from this in-situ kinetic ellipsometry has been confirmed to agree well with ex-situ photoluminescence and transmission electron microscope (TEM) observations. © 1998 Elsevier Science S.A.

    DOI: 10.1016/S0040-6090(97)00894-8

  • Demonstration of all-optical threshold operation in GaInAsP distributed feedback waveguides and its application to AND gate 査読

    K. Nakatsuhara, S. H. Jeong, Y. Tsukishima, T. Mizumoto, B. J. Ma, Y. Nakano

    5th Asia-Pacific Conference Communications and 4th Optoloelectronics Communications Conference: The Conference-Vitality to New Century, APCC/OECC 1999   2   1568 - 1570   1998年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:Institute of Electrical and Electronics Engineers Inc.  

    All-optical AND gate operation using a nonlinear distributed feedback waveguide was obtained in a waveguide structure compatible with optical integrated circuits. The threshold power for the optical switching operation was mW order.

    DOI: 10.1109/APCC.1999.820587

  • Demonstration of all-optical switching in a GaInAsP distributed feedback waveguide 査読

    K. Nakatsuhara, T. Mizumoto, E. Takahashi, H. Sainul, Y. Saka, B. J. Ma, Y. Nakano

    IEEE Nonlinear Optics: Materials, Fundamentals and Applications - Conference Proceedings   340 - 342   1998年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    The all-optical switching in GaInAsP distributed feedback waveguides with a Bragg reflector was examined. The effective index no of TE mode at 1545 nm wavelength was 3.325. The length of Bragg reflector region L = 3 mm was assumed with a grating coupling coefficient K = 50 cm-1, an intensity-dependent refractive index coefficient n2 = -5.9×10-12 cm2/W, and an absorption coefficient α0 = 1/cm-1. The calculated transmission characteristic for detuning Δn/n0 = -0.037% was examined as a function of input power with the corresponding threshold operation. A temporal input light waveform with high and low pulses with peak power of 30 and 15 mW, respectively, was observed. A typical bistable characteristic was also observed as a function of input intensity with the corresponding set-reset operation.

  • First multi-mode interference devices fabricated by metal-organic vapor phase diffusion enhanced selective area epitaxy 査読

    M Bouda, N Kaida, Y Mishima, Y Nakano, Y Shimogaki, K Tada

    1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS   329 - 332   1998年 (   ISSN:1092-8669 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    For the first time Multi-Mode Interference (MMI) power splitters have been fabricated by selective area growth, using our novel Metal-Organic Vapor Phase Diffusion Enhanced Selective Area Epitaxy (MOVE2) process which features extremely wide-range in-plane bandgap control and high design flexibility and therefore is very suitable for photonic integration. Excess losses as low as 2dB have been obtained for MMI power splitters with smooth and sufficiently flat waveguide structures, including S-bends.

  • Fabrication of InGaAs/GaAs DFB quantum wire lasers using V-grooved substrates

    T Toda, F Reinhardt, E Martinet, E Kapon, Y Nakano

    1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS   349 - 352   1998年 (   ISSN:1092-8669 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

  • Nonlinear directional coupler loaded with Bragg reflector 査読

    K. Nakatsuhara, T. Mizumoto, E. Takahashi, S. Hossain, S. H. Jeong, B. J. Ma, Y. Nakano

    Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS   1   268 - 269   1998年 (   ISSN:1092-8081 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:IEEE  

    All-optical multiplexing and demultiplexing using nonlinear directional couplers (NLDC) have been demonstrated using a semiconductor. The all-optical on-off switching of nonlinear directional couplers loaded with a Bragg reflector occurs with a similar power to the nonlinear DFB waveguides. That is the switching power is much less, typically 1/10, compared with a conventional nonlinear directional coupler. Compared with the nonlinear DFB waveguides, the devices have an advantage for routing optical signals, that is, spatial separation of reflected light from their input port. The bistable operation of transmitted light in a nonlinear directional coupler loaded with a Bragg reflector is presented.

  • Wavelength trimming by photoabsorption-induced disordering for multiple-wavelength distributed-feedback laser arrays 査読

    Tsurugi K. Sudoh, Mitsutaka Kumano, Yoshiaki Nakano, Kunio Tada

    IEEE Photonics Technology Letters   9 ( 7 )   887 - 888   1997年7月 (   ISSN:1041-1135 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    In this letter, we describe a simple method to adjust the oscillation wavelength of distributed-feedback (DFB) lasers after the device fabrication without using any external active tuning. The method utilizes a permanent change of refractive index in quantum well active layer induced by external laser beam irradiation. We have demonstrated 0.36 nm adjustment in a 1.55-μm ridge waveguide DFB laser.

    DOI: 10.1109/68.593334

  • Kinetic studies on thermal decomposition of MOVPE sources using fourier transform infrared spectroscopy 査読

    M. Sugiyama, K. Kusunoki, Y. Shimogaki, S. Sudo, Y. Nakano, H. Nagamoto, K. Sugawara, K. Tada, H. Komiyama

    Applied Surface Science   117-118   746 - 752   1997年6月 (   ISSN:0169-4332 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Elsevier  

    A kinetic study was done on the decomposition of source materials used in metalorganic vapor phase epitaxy (MOVPE) such as trimethylgallium, trimethylindium, tertiarybutylarsine, tertiarybutylphosphine and dimethylzinc. The purpose of this study was to construct reaction models with accurate rate constants, which are required for the numerical analysis of MOVPE process and computer assisted process optimization. For the measurements we employed a quartz-tube cracking reactor and Fourier transform infrared spectrometer (FT-IR) as the gas monitoring system. First, the decomposition rate of each source was measured and the ability of the system to determine source gas decomposition rates was validated. Next the effect of substrate surfaces on the decomposition rates and the effect of gas mixing were examined. We observed that surface reaction rates were not negligible in the decomposition of some sources, and that the decomposition rates of group III sources increased when they were mixed with group V sources. The results of this study showed that the effect of substrates and gas mixing need to be properly accounted for in numerical models to accurately simulate epitaxial growth process.

    DOI: 10.1016/S0169-4332(97)80176-6

  • Analysis, fabrication, and characterization of tunable DFB lasers with chirped gratings 査読

    N Chen, Y Nakano, K Okamoto, K Tada, GI Morthier, RG Baets

    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS   3 ( 2 )   541 - 546   1997年4月 (   ISSN:1077-260X )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC  

    This paper describes the analysis, fabrication, and characterization of chirped grating tunable distributed-feedback (CGT DFB) semiconductor lasers. Both theoretical and experimental results show that the wavelength tunability of DFB lasers can be enhanced by introducing pitch-chirped grating structure. The tuning mechanism is also theoretically demonstrated. The proposed CGT DFB laser will be useful in optical systems using wavelength division multiplexed (WDM) networks and other applications, due to its broader continuous tunability and very easy fabrication.

  • Wavelength trimming by external light irradiation - Post-fabrication lasing wavelength adjustment for multiple-wavelength distributed-feedback laser arrays 査読

    Tsurugi K. Sudoh, Yoshiaki Nakano, Kunio Tada

    IEEE Journal on Selected Topics in Quantum Electronics   3 ( 2 )   577 - 583   1997年4月 (   ISSN:1077-260X )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    Oscillation wavelength of distributed-feedback (DFB) lasers is easily affected by small variation in device parameters, and therefore, prescribing oscillation wavelength is very difficult. This insufficient wavelength reproducibility limits the device yield, specifically, in multiple-wavelength DFB laser arrays whose element needs to have lasing wavelength that matches pre-defined wavelength-division-multiplexed (WDM) channels. In this paper, we describe a novel concept to manage this problem, namely, "wavelength trimming." Here, the oscillation wavelength error is corrected after the device fabrication without using external active control circuitry. In this particular demonstration, we have used Se-based chalcogenide glass film having photo-induced refractive index change as a part of the laser waveguide, and demonstrated the wavelength trimming of 0.14 nm at 1.55 μm in an index-coupled DFB laser by He-Ne laser irradiation.

    DOI: 10.1109/2944.605709

  • Analysis of polarization-independent large field-induced refractive index change without red shift of absorption edge in a strained five-step GaAs-InAlGaAs asymmetric coupled quantum well 査読

    H. Feng, J. P. Pang, M. Sugiyama, K. Tada, Y. Nakano

    IEE Conference Publication   ( 448 /1 )   183 - 186   1997年 (   ISSN:0537-9989 )

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    掲載種別:研究論文(国際会議プロシーディングス)  

    A tensile-strained five-step asymmetric coupled quantum well (FACQW) structure is proposed for the first time for large field-induced refractive index change without polarization-dependence and red-shift of absorption edge. The refractive index change of strained FACQW is larger by one order of magnitude compared to that of rectangular quantum well and the difference of the refractive index changes of TE-mode and TM-mode is under 2% when the operation wavelength is apart from absorption edge.

  • Effect of fluorine addition to plasma-enhanced chemical vapor deposition silicon oxide film 査読

    SW Lim, M Miyata, T Naito, Y Shimogaki, Y Nakano, K Tada, H Komiyama

    LOW-DIELECTRIC CONSTANT MATERIALS II   443   143 - 148   1997年 (   ISSN:0272-9172 )

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:MATERIALS RESEARCH SOCIETY  

    One solution to reduce the time constant of ultra large scale integrated circuit (ULSI) is the use of a low dielectric constant intermetal film like fluorinated silicon oxide (SiOF). We could obtain SiOF films with low dielectric constant as low as 2.6 and good step coverage by adding CF4 to SiH4 and N2O in plasma-enhanced chemical vapor deposition (PECVD) process. To investigate the dielectric constants due to each polarization and the reason for the decrease in the dielectric constant, we used capacitance-voltage (C-V) and ellipsometry measurements, and Kramers-Kronig transformation. The decrease in dielectric constant could not be completely explained by the reduction in ionic and electronic polarization. We could detect silanol groups, Si-OH in the films and their decrease with increasing CF4 flow rate. It is suggested that the main polarization component to decrease dielectric constant is such as orientational polarization. The step coverage of film was improved by adding CF4. It is suggested that the reduction in the sticking probability of films forming species due to the change in surface state improved the step coverage.

  • Optimization of electron cyclotron resonance reactive ion beam etching reactors for dry etching of GaAs with Cl2 査読

    K. Nishioka, M. Sugiyama, M. Nezuka, Y. Shimogaki, Y. Nakano, K. Tada, H. Komiyama

    Journal of the Electrochemical Society   144 ( 9 )   3191 - 3197   1997年 (   ISSN:0013-4651 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Electrochemical Society Inc.  

    Dry etching of GaAs in plasma reactors is an important technology for the optoelectronic devices. Currently, process optimization is done by trial and error, which is expensive in both time and money. Optimization techniques must therefore be developed based on a fundamental understanding of the related process, and include a macroscopic understanding of the plasma chemistry. In this work, we examined the effect of gas flow rate on the peak intensity of the optical emission spectra of the chemical species in an etching chamber and on the etch rate of the GaAs substrate. From our results we developed a simplified model of the dry etching process of GaAs with Cl2 in electron cyclotron resonance reactive ion beam etching that accounts for the degree of gas homogeneity in the reactor, especially the Cl2 concentration. The effect of the reactor geometry and operating conditions on the performance of the dry etching process is well explained with this model, which can be used to optimized dry etching processes.

    DOI: 10.1149/1.1837982

  • Reduction mechanism in the dielectric constant of fluorine-doped silicon dioxide film 査読

    Sang Woo Lim, Yukihiro Shimogaki, Yoshiaki Nakano, Kunio Tada, Hiroshi Komiyama

    Journal of the Electrochemical Society   144 ( 7 )   2531 - 2537   1997年 (   ISSN:0013-4651 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:Electrochemical Society Inc.  

    One solution to signal delay in very large-scale integrated circuits is to use a low dielectric constant interlayer film, such as F-doped silicon dioxide (SiO2). By adding CF4 to SiH4/N2O plasma-enhanced chemical vapor deposition, we obtained F-doped SiO2 films with a dielectric constant as low as 2.6. We studied the mechanism behind this decrease in the dielectric constant by estimating the constants due to each polarization component (ionic, electronic, and orientational) using capacitance-voltage (C-V) measurements, Fourier transform infrared spectroscopy spectra combined with the Kramers-Kronig relation, and spectroscopic ellipsometry. The Kramers-Kronig calculations showed that ionic polarization decreased with increasing CF4 concentration, whereas the electronic polarization remained almost constant. However, the low dielectric constant obtained by the C-V measurements could not be completely explained by the reduction in ionic and electronic polarizations but probably resulted front a decrease in the orientational polarization. Orientational polarization may be caused by Si-OH bonds and is mainly decreased by adding CF4. Therefore, an effective way to reduce the dielectric constant in F-doped SiO2 films is to reduce the orientational polarization.

    DOI: 10.1149/1.1837850

  • Strong Exciton Absorption Peak Enhancement without Redshift of Absorption Edge in Al0.3Ga0.7As/GaAs Five-Step Asymmetric Coupled Quantum Well with Modified Potential. 査読

    Feng Hao, Sugiyama Masaki, Pang Jia–Pang, Tada Kunio, Nakano Yoshiaki

    Japanese Journal of Applied Physics   36 ( 7 )   L855 - L856   1997年 (   ISSN:0021-4922 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:公益社団法人 応用物理学会  

    Strong enhancement of exciton absorption peaks at low applied voltage without redshift of the absorption edge, which is attributed to e1hh2 and e2hh1 transitions, was observed at room temperature in a structure composed of five-step asymmetric coupled quantum well (FACQW). The measurement results agree well with our numerical analysis results.

    DOI: 10.1143/jjap.36.L855

  • 吸収型利得結合DFBレーザにおける特異な小信号変調応答

    戸田 知朗, 須藤 剣, 中野 義昭, 多田 邦雄

    ( 16D2-3 )   74 - 75   1996年7月

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    掲載種別:研究論文(学術雑誌)  

  • Wide-wavelength polarization-independent optical modulator based on tensile-strained quantum well with mass-dependent width 査読

    Masaki Kato, Kunio Tada, Yoshiaki Nakano

    IEEE Photonics Technology Letters   8 ( 6 )   785 - 787   1996年6月 (   ISSN:1041-1135 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We have fabricated a multiple-quantum-well (MQW) waveguide optical modulator incorporating tensile strain and quantum well with mass-dependent width (QWMDW) for the first time. The structure was built on a strain relief InAlGaAs buffer layer grown on a GaAs substrate. Polarization-independent modulation with more than -10 dB extinction (at 8 V reverse voltage) was achieved over a very wide operating range, from 858 to 886 nm wavelength.

    DOI: 10.1109/68.502094

  • Simple kinetic model of ECR reactive ion beam etching reactor for the optimization of GaAs etching process 査読

    Masakazu Sugiyama, Takayuki Yamaizumi, Masahiro Nezuka, Yukihiro Shimogaki, Yoshiaki Nakano, Kunio Tada, Hiroshi Komiyama

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   35 ( 2 SUPPL. B )   1235 - 1241   1996年2月 (   ISSN:0021-4922 )

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    掲載種別:研究論文(学術雑誌)  

    In order to efficiently optimize electron cyclotron resonance/reactive ion beam etching (ECR-RIBE) process for GaAs, we studied the kinetic mechanism of the process. First we examined the relationship between etching performances and process parameters. We paid particular attention to the effect of the Cl2 flow rate. To explain this effect, we examined the effect of Cl2 flow rate on Cl radical concentration by optical emission spectroscopy (OES). The Cl emission intensity depended on Cl2 flow rate and the substrate area. We introduced a simple model of our ECR-RIBE reactor and explained the observed dependence of emission intensity of Cl and Ga. We also explained the flow rate dependence of etching rate in terms of the effect of etching products. We obtained some rate constants of etching reactions according to our model. Our study revealed that the macroscopic phenomena in the reactor, such as the change in gas residence time, should affect the etching performances at a micron level.

    DOI: 10.1143/jjap.35.1235

  • Impurity-free Disordering of InGaAs/InGaAlAs Quantum Wells on InP by Dielectric Thin Cap Films and Characterization of Its In-plane Spatial Resolution. 査読

    Sudo Shinya, Onishi Hirofumi, Nakano Yoshiaki, Shimogaki Yukihiro, Tada Kunio, Mondry Mark J., Coldren Larry A.

    Japanese Journal of Applied Physics   35 ( 2 )   1276 - 1279   1996年 (   ISSN:0021-4922 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:公益社団法人 応用物理学会  

    We have studied impurity-free disordering of InGaAs/InGaAlAs quantum wells on InP, induced by three different dielectric cap films, namely, SiO2, SiNx and SrF2. The difference in photoluminescence characteristics of these materials after heat treatment has been discussed. Furthermore, the in-plane spatial resolution of the disordering process has been investigated for the first time.

    DOI: 10.1143/JJAP.35.1276

  • Preparation of Low-Dielectric-Constant F-Doped SiO2 Films by Plasma-Enhanced Chemical Vapor Deposition. 査読

    Lim Sang Woo, Shimogaki Yukihiro, Nakano Yoshiaki, Tada Kunio, Komiyama Hiroshi

    Japanese Journal of Applied Physics   35 ( 2 )   1468 - 1473   1996年 (   ISSN:0021-4922 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:公益社団法人 応用物理学会  

    The delay due to the dielectric constant of an interlayer film results in the limited performance of very large-scale integrated circuits (VLSI). One solution to this problem is the use of a low-dielectric-constant interlayer film such as F-doped SiO2. We were able to obtain F-doped SiO2 films with dielectric constants as low as 2.3 and good step coverage by adding CF4 to SiH4/N2O plasma-enhanced chemical vapor deposition (PECVD). Our study focuses on the mechanism of the decrease in the dielectric constant and that of process improvement. It appears that a decrease in the dielectric constant is due to the decrease in the ionic polarization. The change in the Si-O stretching mode due to CF4 addition seems to be the most important factor in the decrease in the dielectric constant. The improvement of the step coverage and the decrease in the film growth rate are due to the decrease in the sticking probability of the film-forming species.

    DOI: 10.1143/JJAP.35.1468

  • Preparation of low dielectric constant F-doped SiO2 films by plasma enhanced chemical vapor deposition 査読

    Sang Woo Lim, Yukihiro Shimogaki, Yoshiaki Nakano, Kunio Tada, Hiroshi Komiyama

    Applied Physics Letters   68 ( 6 )   832 - 834   1996年 (   ISSN:0003-6951 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    Signal delays in interlayer films limit the performance of very large scale integrated (VLSI) circuits. Signal delays can be reduced by using interlayer films with low dielectric constants, such as fluorine-doped (F-doped) SiO2 films. We were able to fabricate F-doped SiO2 films with dielectric constants as low as 2.3 and with good step coverage, by adding CF4 to SiH4/N2O plasma-enhanced chemical vapor deposition (PECVD). The reduction of the dielectric constant apparently results from a decrease of the ionic polarization. The improvement of step coverage is due to a decrease of the sticking probability of the film-forming species. © 1996 American Institute of Physics.

    DOI: 10.1063/1.116548

  • Simplified modeling of ECR-RIBE reactor for the optimization of GaAs etching process with Cl-2 査読

    Y Shimogaki, M Sugiyama, K Nishioka, M Nezuka, Y Nakano, K Tada, H Komiyama

    PROCEEDINGS OF THE ELEVENTH INTERNATIONAL SYMPOSIUM ON PLASMA PROCESSING   96 ( 12 )   83 - 88   1996年

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    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:ELECTROCHEMICAL SOCIETY INC  

    Dry etching of GaAs is an important technology for the fabrication of optoelectronic devices. Thus the guiding principle for the optimization of the process parameters is required, which needs the understanding of plasma physics and chemistry. In the present paper, we propose simplified model of this etching process, considering the etching reactor as a combination of Continuous Stirred Tank Reactors (CSTRs), that is, the ideal reactor model in which the concentration of every chemical species is uniform. The etching performance of our ECR-RIBE (Electron Cycrotron Resonance Reactive Ion Beam Etching) reactor can be well explained by this model.

  • DESIGN AND FABRICATION OF MONOLITHICALLY INTEGRATED LATERAL-ELECTRODE ETCHED-MIRROR LASER WITH Y-BRANCH SINGLE-MODE WAVE-GUIDE IN GAAS/ALGAAS 査読

    K OKAMOTO, A YAMADA, Y NAKANO, K TADA

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   34 ( 9A )   4809 - 4814   1995年9月 (   ISSN:0021-4922 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:JAPAN J APPLIED PHYSICS  

    Design and fabrication of a monolithically integrated lateral-electrode laser with a Y-branch single-mode waveguide are described. The ridge-guided Fabry-Perot laser and strip-loaded waveguide are coupled with the evanescent field, and are fabricated simply without resorting to complicated regrowth procedures. The laser has planar lateral electrodes with a dry-etched cavity. Furthermore,the waveguide is of the strip-loaded type, consisting of two cladding layers having different carrier concentrations to reduce the impurity absorption. The growth structure is optimized theoretically, and the coupled beams from the waveguide are observed experimentally.

  • CHARACTERIZATION OF P-TYPE AND N-TYPE IMPURITY DIFFUSIONS IN GAAS FROM DOPED SILICA FILMS 査読

    K OKAMOTO, A YAMADA, Y SHIMOGAKI, Y NAKANO, K TADA

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   34 ( 2B )   1127 - 1134   1995年2月 (   ISSN:0021-4922 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:JAPAN SOC APPLIED PHYSICS  

    Characteristics of p- and n-type open-tube diffusion into GaAs using zinc (Zn-) and tin (Sn)-doped spin-on silica films are investigated. This paper first describes the difference of carrier concentration profiles between both types of diffusion, and then interstitial-substitutional diffusion mechanisms are proposed. Next, the surface condition after diffusion is observed by SEM and AFM. In the case of using highly doped films, abundant surface defects are detected. However, the surface condition is greatly improved by using low-doped ones. Also, the two micrographs-are in good agreement. Finally, lateral diffusion length and electrical characteristics of diffused layers are discussed. It is concluded that this diffusion method is quite simple and useful for the fabrication of III-V compound semiconductor devices.

  • FORMATION OF HIGH-CONTRAST PERIODIC CORRUGATIONS BY OPTIMIZING OPTICAL-PARAMETERS OF PHOTORESISTS IN 325 NM LASER HOLOGRAPHIC EXPOSURE 査読

    K OKAMOTO, Y NAKANO, K TADA

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   34 ( 2B )   1286 - 1292   1995年2月 (   ISSN:0021-4922 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:JAPAN J APPLIED PHYSICS  

    Formation of high-contrast periodic corrugations by means of laser holographic exposure is investigated. This paper first describes optical parameters of several positive-acting photoresists extracted from UV transmission spectra analysis. Conventional g-line photoresists have high values of these parameters and might not be suitable for this purpose. Next, shapes of periodic corrugations are simulated in three typical g-line photoresists using other optical parameters as well as developing process properties. Both s- and p-polarized plane-wave differences and substrate dependence are also considered. As a result, the shapes are found to depend mainly on gamma values of the photoresists. High-contrast corrugations and a highly reproducible process are expected if an optimum photoresist is selected. Finally, we fabricate high-contrast periodic corrugations with a period of 255 nm, and the result is in good agreement with the theoretical estimation.

  • FABRICATION OF TE TM MODE SPLITTER USING COMPLETELY BURIED GAAS/GAALAS WAVE-GUIDE 査読

    K OKAMOTO, M DOR, T IRITA, Y NAKANO, K TADA

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   34 ( 1 )   151 - 155   1995年1月 (   ISSN:0021-4922 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:JAPAN J APPLIED PHYSICS  

    A GaAs/GaAlAs-system TE/TM mode splitter using the mode interference principle is described. Single- and double-mode waveguides are patterned by reactive ion etching after the first molecular beam epitaxy. They are then completely buried by liquid-phase epitaxy, which enables low loss propagation due to side-wall smoothness, because of the thermal deformation effect. For achieving low loss characteristics in this mode splitter, the surface treatment process before crystal growth and S-bend waveguide mask formation procedure are also optimized. Propagation loss of the single-mode waveguide is less than 1.0 dB/cm. In order to secure birefringence of the waveguide for mode splitting, upper and lower GaAlAs-cladding mol fractions are different. Finally, the fabricated device achieves the TE/TM mode splitting ratio of 8.2 dB for both polarizations.

  • Analysis of distributed feedback semiconductor laser-electroabsorption modulator integrated light source, including gain-coupled structure 査読

    Yoshiaki Nakano, Kunio Tada, Weimin Si, Yi Luo, Dejie Li, Keqian Zhang

    Japanese Journal of Applied Physics   34 ( 2S )   1260 - 1264   1995年 (   ISSN:1347-4065 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    Taking into consideration of gain coupling, characteristics such as single-mode selectivity, chirping and light output efficiency of photonic integrated circuits (PIC) integrating distributed feedback (DFB) semiconductor lasers and electroabsorption modulators are analyzed for the first time. Devices with conventional index-coupled (IC), quarter-wave-shifted (QWS) and gain-coupled (GC) DFB laser sections are calculated and compared. The chirping of GC-PIC is nearly the same as that of IC-PIC and QWS-PIC, but the single-mode selectivity of GC-PIC is much better. With a [HR-AR] coating, which is advantageous for high-power operation, GC-PIC shows a much higher probability of single-mode operation than IC-PIC, while QWS-PIC does not function at all. © 1995 The Japan Society of Applied Physics.

    DOI: 10.1143/JJAP.34.1260

  • Dynamics of Gain-Switching Operation in Gain-Coupled Distributed-Feedback Semiconductor Lasers with Absorptive Grating 査読

    Tsurugi K. Sudoh, Masaki Funabashi, Yoshiaki Nakano, Kunio Tada, Takaaki Hirata

    IEEE Journal on Selected Topics in Quantum Electronics   1 ( 2 )   583 - 591   1995年 (   ISSN:1558-4542 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    Very-low-chirping optical short-pulse generation in gain-coupled (GC) distributed-feedback (DFB) semiconductor lasers of absorptive-grating type is investigated. First, we have observed time-resolved spectra of gain-switched optical pulses. The GC DFB laser has shown a very small and characteristic lasing wavelength shift with time. Moreover, we have noticed uncommon bias-dependence of the pulse width and pulse tailing at high bias regime. Then, we have examined spontaneous emission from the grating to probe carrier generation by the optical pulse. Next, we have conducted a rate equation analysis to understand the uncommon pulse dynamics of the GC DFB laser by taking the carrier generation in the grating into account. Consequently, all the anomalies observed in the GC DFB laser have successfully been explained. Finally, by making use of the analysis, we have shown a guideline to further improve the pulse shape without sacrificing the low chirping property. © 1995 IEEE

    DOI: 10.1109/2944.401245

  • Wavelength Tuning Characteristics of Widely Tunable Distributed Forward and Backward-Coupling Semiconductor Laser 査読

    Kenji Sato, Yoshiaki Nakano, Kunio Tada

    IEEE Photonics Technology Letters   7 ( 3 )   257 - 259   1995年 (   ISSN:1941-0174 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    A distributed forward and backward-coupling (DFBC) semiconductor laser for wide wavelength tuning is proposed and analyzed. A 4 × 4 F-matrix method is established in order to pursue numerical simulation. As a result, over 100 nm tuning around 1.55 µm by simple injection current control scheme is predicted. © 1995 IEEE.

    DOI: 10.1109/68.372738

  • Wavelength filtering operation in absorptive-grating gain-coupled distributed-feedback mqw lasers 査読

    Tomohiro Otani, Tsurugi K. Sudoh, Yoshiaki Nakano, Kunio Tada

    Japanese Journal of Applied Physics   34 ( 2S )   1249 - 1252   1995年 (   ISSN:1347-4065 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We have investigated transmission-type wavelength filtering operation in semiconductor distributed feedback (DFB) lasers incorporating gain coupling (GC). This GC DFB laser filter has an inherent single pass band which is not much affected by the facet reflection or phases. Our analysis has predicted larger parasitic-band suppression and narrower pass bandwidth than conventional DFB laser filters. Next, we have demonstrated optical wavelength filtering operation in an actual GC DFB multiple quantum well (MQW) laser for the first time. We have confirmed the single transmission pass band in this type of DFB laser filter, and obtained useful characteristics such as 0.02 nm transmission bandwidth, 14 dB discrimination, zero insertion loss, and -12 dBm saturation power. © 1995 The Japan Society of Applied Physics.

    DOI: 10.1143/JJAP.34.1249

  • Fabrication of multiple-electrode chirped-grating-tunable distributed-feedback lasers 査読

    Nong Chen, Yoshiaki Nakano, Kunio Tada

    Japanese Journal of Applied Physics   33 ( 1 )   856 - 858   1994年 (   ISSN:1347-4065 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    This paper describes fabrication and characteristics of GaAlAs/GaAs wavelength tunable distributed-feedback (DFB) semiconductor lasers with linearly chirped grating. In a two-section device, a single-mode quasi-continuous tuning range of 2.2 nm at around 868 nm has been achieved. This resulted mainly from the chirped grating structure effect rather than the free carrier plasma effect or the thermal tuning. A comparison of the two-section DFB laser with a conventional uniform grating has also been carried out. © 1994 Japanese Journal of Applied Physics. All rights reserved.

    DOI: 10.1143/JJAP.33.856

  • Semiconductor photonic integrated devices 査読

    Kunio Tada, Yoshiaki Nakano

    Electronics and Communications in Japan (Part II: Electronics)   77 ( 11 )   99 - 112   1994年 (   ISSN:1520-6432 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    Semiconductor materials are suitable for monolithic photonic integrated circuits since they can realize almost all the necessary photonic functions such as light emission, light amplifications, light detection, light modulation/switching and optical waveguiding. Additionally, since the figure of merit of various physical effects used to realize the foregoing functions is large and since it is easy to arrange the spatial region to generate these effects into compact and convenient shape, it is advantageous for small size and high performance. The research and development of photonic integrated circuits utilizing semiconductors has an accumulation of history, knowledge, and technology, already spanning a quarter of a century. Although it has required a longer time before it becomes practical than the electronic integrated circuits, it has shown rapid progress since the end of 1980's. This is attributed to the combination of the driving force from the needs point of view based on the advances in semiconductor laser technology, introduction, and spreading of quantum well structures and evolution of processing technology such as epitaxial growth methods and the strong demand from the needs point of view toward all optical telecommunication networks where not only trunk lines but also switching nodes and subscriber lines use an optical wave. This paper reviews the present status of photonic devices and circuits obtained by monolithic integration of semiconductor element devices by classifying them into light emitters, optical switches, and combiners/splitters. Finally, the necessity of semiconductor integrated photonic systems is set forth toward the future. Copyright © 1994 Wiley Periodicals, Inc., A Wiley Company

    DOI: 10.1002/ecjb.4420771110

  • SELF-SUPPRESSION EFFECT OF LONGITUDINAL SPATIAL HOLE-BURNING IN ABSORPTIVE-GRATING GAIN-COUPLED DFB LASERS 査読

    TK SUDOH, Y NAKANO, K TADA, K KIKUCHI, T HIRATA, H HOSOMATSU

    IEEE PHOTONICS TECHNOLOGY LETTERS   5 ( 11 )   1276 - 1278   1993年11月 (   ISSN:1041-1135 )

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    記述言語:英語   掲載種別:研究論文(学術雑誌)   出版者・発行元:IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC  

    Longitudinal spatial hole burning (LSHB) induces degradation of longitudinal-mode stability in distributed feedback (DPB) lasers. Measurement of frequency modulation characteristics has revealed that, in absorptive-grating gain-coupled DFB lasers, the LSHB diminishes as power increases. This anomalous behavior has been qualitatively explained by a theoretical analysis that took into account the saturable nature of the absorption of the gain-coupled grating. This LSHB suppression effect is advantageous for high-power single longitudinal-mode operation of DFB lasers.

    DOI: 10.1109/68.250043

    その他リンク: http://orcid.org/0000-0002-6115-1406

  • Absorptive-grating gain-coupled distributed-feedback mqw lasers with low threshold current and high single-longitudinal-mode yield 査読

    Yoshiaki Nakano, Hong-Li Cao, Kunio Tada, Yi Luo, Machio Dobashi, Haruo Hosomatsu

    Japanese Journal of Applied Physics   32 ( 8 R )   825 - 829   1993年 (   ISSN:1347-4065 )

     詳細

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    Although gain-coupled (GC) distributed-feedback (DFB) lasers of the absorptive-grating type have several merits over those of gain-grating type, there have been disadvantages which include threshold increase due to excess absorption, parasitic index coupling, and nonlinear operation. In this paper we describe some new concepts to cope with these problems, namely, grating duty-factor optimization, a conduction-type inverted absorptive grating, and an anti-phase index grating. We have applied these schemes to GaAlAs/GaAs multiple-quantum-well (MQW) GC DFB lasers. Consequently, low threshold current, high slope efficiency, high side-mode suppression railo, narrow line width, and high single-mode yield have been achieved concurrently in as-cleaved devices. © 1993 The Japan Society of Applied Physics.

    DOI: 10.1143/JJAP.32.825

  • IMPURITY DIFFUSION INTO GAAS THROUGH THE SIO2 PROTECTIVE LAYERS 査読

    DK GAUTAM, Y SHIMOGAKI, Y NAKANO, K TADA

    SHALLOW IMPURITIES IN SEMICONDUCTORS   117   417 - 422   1993年 (   ISSN:0255-5476 )

     詳細

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)   出版者・発行元:TRANS TECH PUBLICATIONS LTD  

  • Chirped Grating Tunable DFB Laser -- Novel Laser Diode with Broader Continuous Tuning Range 査読

    Nong CHEN, Asanobu KITAMOTO, Yoshiaki NAKANO, Kunio TADA

    Proceedings of the SPIE 1979 International Conference on Lasers and Optoelectronics (ICLOE'92)   347 - 350   1992年10月

     詳細

    記述言語:英語   掲載種別:研究論文(国際会議プロシーディングス)  

  • Influence of Facet Reflection on the Performance of a DFB Laser Integrated with an Optical Amplifier Modulator 査読

    Jun-Ichi Hashimoto, Yoshiaki Nakano, Kunio Tada

    IEEE Journal of Quantum Electronics   28 ( 3 )   594 - 603   1992年 (   ISSN:1558-1713 )

     詳細

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    In this paper, we analyze the influence of output facet reflection on characteristics of a monolithically integrated optical device consisting of a distributed feedback (DFB) laser and an optical amplifier/modulator. Basic equations used for the analysis are the characteristic equation for a DFB laser and the rate equations. As a result, we know that static and dynamic properties of such optical integrated devices are seriously degraded by the optical feedback from the output facet. We conclude that the power reflectivity of the output facet should be reduced to at least less than 0.1% for the integrated region to work as an optical amplifier, and less than 0.01% as an intensitv modulator. © 1992 IEEE

    DOI: 10.1109/3.124983

  • Highly Efficient Single Longitudinal-Mode Oscillation Capability of Gain-Coupled Distributed Feedback Semiconductor Lasers—Advantage of Asymmetric Facet Coating 査読

    Yoshiaki Nakano, Yusuke Uchida, Kunio Tada

    IEEE Photonics Technology Letters   4 ( 4 )   308 - 311   1992年 (   ISSN:1941-0174 )

     詳細

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    The gain-coupled DFB laser is found to possess an uncommon and useful feature
    unlike the quarter-wave phase shifted (index-coupled) DFB laser, it is possible to enhance single facet power extraction efficiency by applying an asymmetric AR-HR coating without demolishing its intrinsic single mode property. © 1992 IEEE

    DOI: 10.1109/68.127196

  • Fabrication and Characteristics of Gain-Coupled Distributed Feedback Semiconductor Lasers with a Corrugated Active Layer 査読

    Yi Luo, Takeshi Inoue, Haruo Hosomatsu, Hideto Iwaoka, Yoshiaki Nakano, Kunio Tada

    IEEE Journal of Quantum Electronics   27 ( 6 )   1724 - 1731   1991年 (   ISSN:1558-1713 )

     詳細

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    A new distributed feedback (DFB) semiconductor laser structure has been proposed where pure gain coupling can be realized. At the same time, the fabrication procedure of this structure has been proposed, which makes use of a special feature of organometallic vapor phase epitaxy. Lasers of this structure were fabricated to show the validity of the proposal. Coupling coefficients of DFB lasers have been calculated considering the gain-coupling component for the first time. Using the results, a DFB laser has been designed to obtain pure gain coupling. the parameters of the actual structure observed under a scanning electron microscope showed good agreement with those designed. We achieved device characteristics that were predicted for purely gain-coupled DFB lasers. for greater gain coupling and lower threshold current operation, an optimization mainly on the A1 composition of a socalled pattern-providing layer and the thickness of the active layer in the new structure has been carried out. As a result, a low threshold current of 17 mA and a high side-mode suppression ratio of 45 dB have been accomplished. © 1991 IEEE.

    DOI: 10.1109/3.89997

  • Ingaas/inp gain-coupled distributed feedback laser with a corrugated active layer 査読

    Takeshi Inoue, Shin-Ichi Nakajima, Yi Luo, Tokukoh Oki, Hideto Iwaoka, Yoshiaki Nakano, Kunio Tada

    Japanese Journal of Applied Physics   30 ( 10B )   L1808 - L1810   1991年 (   ISSN:1347-4065 )

     詳細

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    With InGaAs/InP materials, we have fabricated gain-coupled distributed feedback lasers having grating corrugation on the active layer itself, using two-step organometallic vapor phase epitaxy. Single longitudinal mode properties have been achieved. Self-consistent calculation of coupling coefficients and threshold gain difference for these lasers has also been carried out. © 1991, IOP Publishing Ltd.

    DOI: 10.1143/JJAP.30.L1808

  • Reduction of Excess Intensity Noise Induced by External Reflection in a Gain-Coupled Distributed Feedback Semiconductor Laser 査読

    Yoshiaki Nakano, Yoshitaka Deguchi, Kei Ikeda, Kunio Tada

    IEEE Journal of Quantum Electronics   27 ( 6 )   1732 - 1735   1991年 (   ISSN:1558-1713 )

     詳細

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    Distributed feedback (DFB) lasers operating on the basis of gain coupling (GC) are expected to have a smaller sensitivity to external reflection than conventional index-coupled (IC) DFB lasers. in this paper, we report, for the first time, intensity noise characteristics of the GC DFB laser under the influence of external optical feedback in comparison to the IC DFB laser. It has been found that the excess noise induced by returning light is less than that of the IC DFB laser if the optical feedback is restricted below ≈1%. This may save the need for optical isolators. © 1991 IEEE.

    DOI: 10.1109/3.89998

  • Application of modern control theory to temperature control of the mbe system 査読

    Takuya Ishikawa, Yuen Chuen Chan, Yoshiaki Nakano, Kunio Tada

    Japanese Journal of Applied Physics   29 ( 3 R )   613 - 620   1990年 (   ISSN:1347-4065 )

     詳細

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    A molecular beam epitaxy control system, whereby one microprocessor manages all the objects, has been constructed. The model-following algorithm, which is one of the applications of modern control theory, has been adopted instead of the conventional PID algorithm in order to improve the dynamic response of the temperature. It has been confirmed by computer simulation and measurement that the model-following algorithm is significantly effective especially when the set temperature is to be changed as a function of time. An application of the model-following algorithm to device fabrication has also been demonstrated. © 1990 The Japan Society of Applied Physics.

    DOI: 10.1143/JJAP.29.613

  • Fabrication and characteristics of an integrated dfb laser amplifier having reactive ion etched tilted end facets 査読

    Yoshiaki. Nakano, Yohichi. Hayashi, Nong. Chen, Yasuyuki. Sakaguchi, Kunio. Tada

    Japanese Journal of Applied Physics   29 ( 12 )   2430 - 2433   1990年 (   ISSN:1347-4065 )

     詳細

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We describe the fabrication and characteristics of a DFB laser monolithically integrated with an optical traveling-wave amplifier prepared using OMVPE/LPE hybrid growth. A unique feature is its tilted end facets formed by reactive ion etching for reduction of optical crosstalk. Owing to the low reflectivity of the facets, the elemental devices operate with little interference. © 1990 The Japan Society of Applied Physics.

    DOI: 10.1143/JJAP.29.L2430

  • Purely gain-coupled distributed feedback semiconductor lasers 査読

    Y. Luo, Y. Nakano, K. Tada, T. Inoue, H. Hosomatsu, H. Iwaoka

    Applied Physics Letters   56 ( 17 )   1620 - 1622   1990年 (   ISSN:0003-6951 )

     詳細

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We propose a new distributed feedback (DFB) laser structure in which almost pure gain coupling can be embodied in principle, without sacrificing low threshold operation. An analysis of coupling coefficients has revealed the condition for canceling index-coupling component. Utilizing organometallic vapor phase epitaxy, we have fabricated GaAlAs/GaAs ridge waveguide distributed feedback lasers having this structure. Excellent single longitudinal mode oscillation independent of facet reflection has been obtained along with low threshold current. The single-mode spectrum has exhibited distinctive characters of purely gain-coupled DFB lasers.

    DOI: 10.1063/1.103144

  • Facet reflection independent, single longitudinal mode oscillation in a GaAlAs/GaAs distributed feedback laser equipped with a gain-coupling mechanism 査読

    Yoshiaki Nakano, Yi Luo, Kunio Tada

    Applied Physics Letters   55 ( 16 )   1606 - 1608   1989年 (   ISSN:0003-6951 )

     詳細

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    By loading periodic loss perturbation into a GaAlAs/GaAs distributed feedback laser, we have realized complete single longitudinal mode oscillation which is hardly disturbed by cleaved facet reflection. Our coupled-mode analysis explains this empirical result well.

    DOI: 10.1063/1.102254

  • Analysis, Design, and Fabrication of GaAlAs/GaAs DFB Lasers with Modulated Stripe Width Structure for Complete Single Longitudinal Mode Oscillation 査読

    Yoshiaki Nakano, Kunio Tada

    IEEE Journal of Quantum Electronics   24 ( 10 )   2017 - 2033   1988年 (   ISSN:1558-1713 )

     詳細

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    Complete single longitudinal mode operation of a Ga-AlAs/GaAs distributed feedback (DFB) laser has been accomplished by making use of a modulated stripe width (MSW) structure, which is characterized by its simple configuration and versatility, compared with the other equivalent schemes. After a brief explanation of its historical background, the coupled-mode equations are transformed into the characteristic equation for the DFB laser with arbitrary index modulation which has a form convenient for numerical analysis. Two specific examples of the stripe width modulation, that is, stepped and symmetric linear modulations, are then analyzed by making use of the equations. Optimum design of the stripe shape is subsequently carried out by assuming a particular waveguide structure. The effects of facet reflection on lasing characteristics are discussed to obtain the allowable limit of the reflectivity for effective functioning of the MSW. Calculation procedure and some results of their spectra below threshold are provided for the sake of subsequent examination of experimentally observed spectra. A GaAlAs/GaAs DFB laser having stepped width modulation is fabricated next by using a double channel planar buried heterostructure. The theoretically-predicted two-mode degeneracy and the singlemode selection in the conventional and the MSW device, respectively, are verified experimentally. As an improved version, an MSW device having a symmetric linear modulation scheme and antireflecting film on the facets is fabricated by introducing several new techniques, including reactive ion etching. The device has a spectrum which agrees markedly well with the analytical result. © 1988 IEEE

    DOI: 10.1109/3.8537

  • In situ monitoring technique for fabrication of high-quality diffraction gratings 査読

    Yoshiaki Nakano, Kunio Tada

    Optics Letters   13 ( 1 )   7 - 9   1988年 (   ISSN:1539-4794 )

     詳細

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We describe a simple technique that permits reproducible fabrication of high-quality diffraction gratings with short periods. This technique utilizes in situ monitoring of diffracted light from photoresist gratings during the development process and provides optimum endpoint detection for this process. The effectiveness of the technique has been demonstrated through the fabrication of a distinct grating with a 255-nm period on a GaAs substrate. © 1988, Optical Society of America.

    DOI: 10.1364/OL.13.000007

  • Complete single longitudinal mode oscillation in a GaAlAs/GaAs distributed feedback laser with a modulated stripe width structure fabricated using reactive ion etching 査読

    Yoshiaki Nakano, Kunio Tada

    Applied Physics Letters   51 ( 6 )   387 - 389   1987年 (   ISSN:0003-6951 )

     詳細

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    A modulated stripe width structure (MSW) has been applied to a GaAlAs/GaAs distributed feedback buried heterostructure laser to obtain complete single longitudinal mode oscillation. An MSW device having a gradual modulation scheme and antireflecting films on the cleaved facets has been fabricated using reactive ion etching (RIE). Principal results include realization of a reactive ion etched second-order grating with the grooves as deep as 0.15 μm after regrowth and a modulated stripe having extremely fine definition made possible by RIE. The device had a spectrum which agreed markedly well with an analytical result. The effective functioning of the MSW structure has thereby been confirmed experimentally.

    DOI: 10.1063/1.98426

  • Low threshold operation of a GaAlAs/GaAs distributed feedback laser with double channel planar buried heterostructure 査読

    Yoshiaki Nakano, Kunio Tada

    Applied Physics Letters   49 ( 18 )   1145 - 1147   1986年 (   ISSN:0003-6951 )

     詳細

    記述言語:英語   掲載種別:研究論文(学術雑誌)  

    We describe a GaAlAs/GaAs distributed feedback (DFB) laser with double channel planar buried heterostructure operating at λ=0.88 μm. The device has been prepared using three-step liquid phase epitaxy. A cw threshold current as low as 12 mA at room temperature has been accomplished even with third-order diffraction gratings. A single longitudinal mode oscillation without mode hopping has been observed at any injection level over a temperature range of 60 K. These characteristics are indeed almost comparable to the well-developed quaternary counterparts, thus showing that the excellent spectral purity of DFB lasers will soon be available in the fields where shorter wavelengths are needed.

    DOI: 10.1063/1.97448

  • Proposal of a distributed feedback laser with nonuniform stripe width for complete single-mode oscillation 査読

    Kunio Tada, Yoshiaki Nakano, Akihisa Ushirokawa

    Electronics Letters   20 ( 2 )   82 - 84   1984年1月

     詳細

    掲載種別:研究論文(学術雑誌)  

    DOI: 10.1049/el:19840057

▼全件表示

MISC

  • Metasurface-enabled non-orthogonal four-output polarization splitter for non-redundant full-Stokes imaging

    Go Soma, Kento Komatsu, Chun Ren, Yoshiaki Nakano, Takuo Tanemura

    Optics Express   2024年9月

     詳細

    Imaging polarimetry plays an essential role in various fields since it
    imparts rich information that cannot be obtained through mere intensity and
    spectral measurements. To retrieve full Stokes parameters, at least four sensor
    pixels are required, each of which projects incident light to a different
    polarization state in the Stokes space. Conventional full-Stokes
    division-of-focal-plane (DoFP) cameras realize this function by integrating
    angled polarizers and retarders on top of image sensors. Due to the inevitable
    absorption at the polarizers, however, the maximum efficiency of these schemes
    is limited to 50% in theory. Instead of polarizers, three sets of lossless
    polarization beam splitters can be used to achieve higher-efficiency
    polarimetry, however, at the cost of reduced spatial resolution due to the need
    for six redundant sensor pixels. In this paper, we reveal, for the first time
    to our knowledge, that low-loss four-output polarization splitting (without
    filtering) is possible using a single-layer dielectric metasurface. Although
    these four states are not orthogonal to each other, our metasurface enables
    simultaneous sorting and focusing onto four sensor pixels with an efficiency
    exceeding 50\%, which is not feasible by a simple combination of space-optic
    components. The designed metasurface composed of silicon nanoposts is
    fabricated to experimentally demonstrate complete retrieval of full Stokes
    parameters at the near-infrared wavelength range from 1500 to 1600 nm with
    $-$2.28-dB efficiency. Finally, simple imaging polarimetry is demonstrated
    using a 3$\times$4 superpixel array.

    DOI: 10.1364/OE.529389

    その他リンク: http://arxiv.org/pdf/2405.10634v1

  • コロナと戦争とわが国のこれから

    中野 義昭

    エレクトロニクス実装学会誌   25 ( 4 )   P4 - P4   2022年7月 (   ISSN:1343-9677   eISSN:1884-121X )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人エレクトロニクス実装学会  

    DOI: 10.5104/jiep.25.p4

  • Non-redundant optical phased array (vol 8, pg 1350, 2021)

    Taichiro Fukui, Ryota Tanomura, Kento Komatsu, Daiji Yamashita, Shun Takahashi, Yoshiaki Nakano, Takuo Tanemura

    OPTICA   9 ( 2 )   159 - 159   2022年2月 (   ISSN:2334-2536 )

     詳細

    記述言語:英語   出版者・発行元:OPTICAL SOC AMER  

    DOI: 10.1364/OPTICA.453419

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    記述言語:日本語   出版者・発行元:電子情報通信学会  

  • 招待講演 低コストコヒーレント伝送に向けた簡易光送受信器構成 (電子部品・材料)

    種村 拓夫, 石村 昇太, 周 鵬, 菅沼 貴博, 中野 義昭

    電子情報通信学会技術研究報告 = IEICE technical report : 信学技報   119 ( 171 )   51 - 54   2019年8月 (   ISSN:0913-5685 )

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    記述言語:日本語   出版者・発行元:電子情報通信学会  

  • 招待講演 低コストコヒーレント伝送に向けた簡易光送受信器構成 (レーザ・量子エレクトロニクス)

    種村 拓夫, 石村 昇太, 周 鵬, 菅沼 貴博, 中野 義昭

    電子情報通信学会技術研究報告 = IEICE technical report : 信学技報   119 ( 173 )   51 - 54   2019年8月 (   ISSN:0913-5685 )

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    記述言語:日本語   出版者・発行元:電子情報通信学会  

  • 招待講演 低コストコヒーレント伝送に向けた簡易光送受信器構成 (信頼性)

    種村 拓夫, 石村 昇太, 周 鵬, 菅沼 貴博, 中野 義昭

    電子情報通信学会技術研究報告 = IEICE technical report : 信学技報   119 ( 169 )   51 - 54   2019年8月 (   ISSN:0913-5685 )

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    記述言語:日本語   出版者・発行元:電子情報通信学会  

  • 招待講演 低コストコヒーレント伝送に向けた簡易光送受信器構成 (光エレクトロニクス)

    種村 拓夫, 石村 昇太, 周 鵬, 菅沼 貴博, 中野 義昭

    電子情報通信学会技術研究報告 = IEICE technical report : 信学技報   119 ( 172 )   51 - 54   2019年8月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:電子情報通信学会  

  • 招待講演 低コストコヒーレント伝送に向けた簡易光送受信器構成 (機構デバイス)

    種村 拓夫, 石村 昇太, 周 鵬, 菅沼 貴博, 中野 義昭

    電子情報通信学会技術研究報告 = IEICE technical report : 信学技報   119 ( 170 )   51 - 54   2019年8月 (   ISSN:0913-5685 )

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    記述言語:日本語   出版者・発行元:電子情報通信学会  

  • 閉会の辞

    中野 義昭

    応用物理学会学術講演会講演予稿集   2019.1   6 - 6   2019年2月 (     eISSN:2436-7613 )

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    記述言語:日本語   出版者・発行元:公益社団法人 応用物理学会  

    DOI: 10.11470/jsapmeeting.2019.1.0_6

  • InP光集積4×4ユニタリ変換器の実証

    田之村亮汰, TANG Rui, 種村拓夫, 中野義昭

    電子情報通信学会大会講演論文集(CD-ROM)   2019   2019年 (   ISSN:1349-144X )

  • n-GaN光電極/電解液界面バンドアライメントに及ぼす溶存酸素の影響

    今関裕貴, NGAMPRAPAWAT Supawan, 佐藤正寛, 藤井克司, 嶺岸耕, 杉山正和, 中野義昭

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   80th   2019年

  • 非等分配型多モード干渉器による小型光ユニタリ変換器の検証

    田之村亮汰, TANG Rui, 種村拓夫, 中野義昭

    電子情報通信学会大会講演論文集(CD-ROM)   2019   2019年 (   ISSN:1349-144X )

  • Demonstration of 4 channel Optical Unitary Mode Converter Based on Multiport Directional Couplers (光エレクトロニクス)

    田之村 亮汰, 唐 睿, 種村 拓夫, 中野 義昭

    電子情報通信学会技術研究報告 = IEICE technical report : 信学技報   118 ( 348 )   77 - 81   2018年12月 (   ISSN:0913-5685 )

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    記述言語:英語   出版者・発行元:電子情報通信学会  

  • Carrier Collection Improvement In InGaAs/GaAsN Multiple Quantum Well Solar Cell With Flat Conduction Band

    Warakorn Yanwachirakul, Naoya Miyashita, Hassanet Sodabanlu, Kentaroh Watanabe, Masakazu Sugiyama, Yoshitaka Okada, Yoshiaki Nakano

    Proc. The 7th World Conference on Photovoltaic Energy Conversion   pp.1874 - 1877   2018年

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    記述言語:英語   掲載種別:記事・総説・解説・論説等(国際会議プロシーディングズ)  

    DOI: 10.1109/PVSC.2018.8548083

  • TE光を用いたサブ波長格子型光変調器の設計と試作

    小杉優地, 岡本有貴, 山田千由美, 肥後昭男, 山田俊樹, 大友明, 三田吉郎, 中野義昭, 種村拓夫, 種村拓夫

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   65th   2018年

  • Si基板上GaN層の応力に対するAlN中間層の成長温度依存性

    有井知良, 中原拓也, 出浦桃子, 百瀬健, 杉山正和, 中野義昭, 霜垣幸浩

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   65th   2018年 (   ISSN:2436-7613 )

  • Si基板上GaN成長の応力に対するAlGaN中間層の組成・膜厚の影響

    中原拓也, 出浦桃子, 百瀬健, 中野義昭, 杉山正和, 霜垣幸浩

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   65th   2018年 (   ISSN:2436-7613 )

  • 全光MIMO処理に向けた光集積任意ユニタリ変換デバイス

    種村拓夫, TANG Rui, 田之村亮汰, 中野義昭

    電子情報通信学会技術研究報告   118 ( 314(PN2018 23-30)(Web) )   2018年 (   ISSN:0913-5685 )

  • 4ポートInPストークスベクトル受信器の設計と感度特性解析 (光通信システム)

    菅沼 貴博, 中野 義昭, 種村 拓夫

    電子情報通信学会技術研究報告 = IEICE technical report : 信学技報   117 ( 263 )   57 - 60   2017年10月 (   ISSN:0913-5685 )

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    記述言語:日本語   出版者・発行元:電子情報通信学会  

  • Experimental Demonstration of 4-level Stokes-Vector Signal Detection by Using InP Polarization-Analyzing Circuit (光通信システム)

    ゴッシュ サミール, 種村 拓夫, 中野 義昭

    電子情報通信学会技術研究報告 = IEICE technical report : 信学技報   117 ( 263 )   37 - 42   2017年10月 (   ISSN:0913-5685 )

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    記述言語:英語   出版者・発行元:電子情報通信学会  

  • 日本の太陽光発電技術―これからの展開―集光型超高効率太陽電池―現状と展望―

    中野義昭, 杉山正和

    日本エネルギー学会機関誌   96 ( 2 )   137‐141 - 136   2017年3月 (   ISSN:2432-3586 )

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    記述言語:日本語   出版者・発行元:日本エネルギー学会  

    DOI: 10.20550/jieenermix.96.2_137

  • ナノ構造の加工技術とフォトニクス応用

    肥後昭男, THOMAS Cedric, 寒川誠二, 木場隆之, 高山純一, 村山明宏, 杉山正和, 中野義昭

    電気学会全国大会講演論文集(CD-ROM)   2017   ROMBUNNO.3‐S20‐3   2017年3月

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    記述言語:日本語  

  • エピタキシャルリフトオフにより分離したGaAs基板上の堆積物分析

    中田達也, 渡辺健太郎, SODABANLU H, 木村大希, 宮下直也, 杉山正和, 岡田至崇, 岡田至崇, 中野義昭, 中野義昭

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   64th   ROMBUNNO.14p‐B6‐13   2017年3月

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    記述言語:日本語  

  • 多重量子井戸太陽電池のキャリア回収モデル

    TOPRASERTPONG Kasidit, 渡辺健太郎, 中野義昭, 杉山正和

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   64th   ROMBUNNO.14p‐B6‐7   2017年3月

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    記述言語:日本語  

  • Analysis of Deposited Residues and Its Cleaning Process on GaAs Substrate after Epitaxial Lift-Off

    Tatsuya Nakata, Kentaroh Watanabe, Hassanet Sodabanlu, Daiki Kimura, Naoya Miyashita, Yoshitaka Okada, Yoshiaki Nakano, Masakazu Sugiyama

    Proc. 44th IEEE Photovoltaics Specialists Conference   pp.854 - 857   2017年

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    記述言語:英語   掲載種別:記事・総説・解説・論説等(国際会議プロシーディングズ)  

    DOI: 10.1109/PVSC.2017.8366028

  • Si基板上GaN成長におけるAlN中間層を用いた応力制御メカニズム

    中原拓也, 鈴木道洋, 出浦桃子, 百瀬健, 杉山正和, 中野義昭, 霜垣幸浩

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   78th   2017年 (   ISSN:2758-4704 )

  • Invited talk : Study on reflective semiconductor optical amplifier with segmented electrodes for self-seeded colorless WDM transmitter (光エレクトロニクス)

    ZHOU Peng, ZHAN Wenhui, TANEMURA Takuo, MUKAIKUBO Masaru, NAKANO Yoshiaki

    電子情報通信学会技術研究報告 = IEICE technical report : 信学技報   116 ( 274 )   77 - 81   2016年10月 (   ISSN:0913-5685 )

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    記述言語:英語   出版者・発行元:電子情報通信学会  

  • フラットバンド構造内に挿入された超格子におけるミニバンド形成過程とキャリア輸送評価

    中村翼, 松落高輝, 武田秀明, 鈴木秀俊, 碇哲雄, TOPRASERTPONG Kasidit, 杉山正和, 中野義昭, 福山敦彦

    電子情報通信学会技術研究報告   116 ( 274(OPE2016 76-97) )   61‐64 - 64   2016年10月 (   ISSN:0913-5685 )

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    記述言語:日本語   出版者・発行元:電子情報通信学会  

  • 多モード干渉結合器を用いた光MIMO処理回路

    TANG Rui, 種村拓夫, 中野義昭

    電子情報通信学会大会講演論文集(CD-ROM)   2016   ROMBUNNO.C‐3‐41   2016年9月 (   ISSN:1349-144X )

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    記述言語:日本語  

  • GaNにおけるOpen‐Circuit‐Potential(OCP)の光強度依存性と表面処理の効果

    岩井耀平, 中村亮裕, 小池佳代, 中野義昭, 藤井克司, 杉山正和

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   77th   ROMBUNNO.15p‐A24‐10   2016年9月

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    記述言語:日本語  

  • InP光集積フェーズドアレイの試作と評価

    小松憲人, 福田将治, 種村拓夫, 中野義昭

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   77th   ROMBUNNO.16a‐A35‐10   2016年9月

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    記述言語:日本語  

  • n型GaN光電極上の島状NiOとNiO層構造の光電気化学特性

    小池佳代, 山本和広, 大原智, 杉山正和, 中野義昭, 藤井克司

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   77th   ROMBUNNO.15p‐A24‐8   2016年9月

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    記述言語:日本語  

  • TDTR法を用いたテラヘルツ検出用GaAs MEMS両持ち梁構造の熱時定数の評価

    細野優, ZHANG Ya, MAIRE Jeremie, 長井奈緒美, 肥後昭男, 中野義昭, 野村政宏, 野村政宏, 平川一彦, 平川一彦

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   77th   ROMBUNNO.14p‐B2‐13   2016年9月

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    記述言語:日本語  

  • InGaAs/GaAsP系量子井戸太陽電池におけるミニバンド形成過程とその光学的評価

    松落高輝, 中村翼, 武田秀明, K. Toprasertpong, 杉山正和, 中野義昭, 碇哲雄, 福山敦彦

    宮崎大学工学部紀要   45   119 - 124   2016年7月

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    記述言語:日本語   掲載種別:記事・総説・解説・論説等(大学・研究所紀要)   出版者・発行元:宮崎大学工学部  

  • 超高効率多接合太陽電池作製に向けた表面活性化接合界面の評価

    山下大之, 渡辺健太郎, 藤野真久, 星井拓也, 星井拓也, 杉山正和, 須賀唯知, 岡田至崇, 岡田至崇, 中野義昭

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   63rd   ROMBUNNO.20P-S011-6   2016年3月

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    記述言語:日本語  

  • C-3-39 InPモノリシック集積偏波アナライザの提案と試作(C-3.光エレクトロニクス,一般セッション)

    川端 祐斗, 種村 拓夫, 中野 義昭

    電子情報通信学会総合大会講演論文集   2016 ( 1 )   177 - 177   2016年3月

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • 光通信システム・データセンター用半導体集積光スイッチ (特集 化合物半導体光集積デバイスの展望)

    種村 拓夫, 中野 義昭

    O plus E : Optics・Electronics   38 ( 2 )   129 - 135   2016年2月 (   ISSN:0911-5943 )

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    記述言語:日本語   出版者・発行元:アドコム・メディア  

  • 高効率太陽電池と水素社会—特集 水素エネルギービジネスとセンサ

    中野 義昭

    次世代センサ = Sensor / 調査委員会 編   25 ( 2 )   2 - 5   2016年1月 (   ISSN:2188-496X )

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    記述言語:日本語   出版者・発行元:東京 : 次世代センサ協議会  

    その他リンク: https://ndlsearch.ndl.go.jp/books/R000000004-I027030545

  • C-3-4 InGaAlAs/InAlAs多重量子井戸を用いたキャリア注入型偏波制御器の設計と予備検討(光フィールド・偏波制御,C-3.光エレクトロニクス,一般セッション)

    鈴木 健太郎, 川端 祐斗, 種村 拓夫, 中野 義昭

    電子情報通信学会ソサイエティ大会講演論文集   2015 ( 1 )   78 - 78   2015年8月

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • B-10-70 High-Temperature Operation of Self-seeded RSOA for Low-Cost WDM-PON Transmitters

    Zhan Wenhui, Tanemura Takuo, Yamauchi Shunya, Mukaikubo Masaru, Nakano Yoshiaki

    電子情報通信学会ソサイエティ大会講演論文集   2015 ( 2 )   234 - 234   2015年8月

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    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

  • C-4-5 InP-Based Capsule-Shaped Cavities for Sub-Wavelength Metallic Lasers

    Zhang Baifu, Chieda Koh, Okimoto Takuya, Tanemura Takuo, Nakano Yoshiaki

    電子情報通信学会ソサイエティ大会講演論文集   2015 ( 1 )   142 - 142   2015年8月

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    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

  • High-Aspect-Ratio Structures for Efficient Light Absorption and Carrier Transport in InGaAs/GaAsP Multiple Quantum Well Solar Cells (vol 3, pg 859, 2013)

    Hiromasa Fujii, Yunpeng Wang, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano

    IEEE Journal of Photovoltaics   5 ( 2 )   704 - 704   2015年3月 (   ISSN:2156-3381 )

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    記述言語:英語   出版者・発行元:IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC  

    DOI: 10.1109/JPHOTOV.2014.2382980

  • Low-temperature MOVPE using TEGa for suppressed layer undulation in InxGa1-xAs/GaAs1-yPy superlattice on vicinal substrates

    Hiromasa Fujii, Hassanet Sodabanlu, Masakazu Sugiyama, Yoshiaki Nakano

    JOURNAL OF CRYSTAL GROWTH   414   3 - 9   2015年3月 (   ISSN:0022-0248   eISSN:1873-5002 )

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    記述言語:英語   出版者・発行元:ELSEVIER SCIENCE BV  

    InxGa1-xAs/GaAs1-yPy strain balanced superlattice (SL) is a promising narrow gap material that can be lattice-matched to Ge or GaAs. When growing uniform SLs on vicinal substrates for Ge-based application, formation of step-bunching and the resultant layer undulation is a critical problem. The present paper reports low-temperature metal-organic vapor phase epitaxy (MOVPE) with triethylgallium (TEGa) to improve the stability and the uniformity of SL growth. Using trimetylgallium (TMGa), steps were severely bunched especially during InGaAs growth at high temperature, and the average reflectance of SLs significantly decreased due to lattice relaxation above 580 degrees C. Lowering the growth temperature to 550-530 degrees C was effective in order to grow 100-period SLs with a mirror-like surface, but an apparent lateral layer undulation was still confirmed by ex-situ X-ray-diffraction and STEM observation. Growth of SLs below 530 degrees C with TMGa was found to result in serious crystal degradation due to unstable growth in the kinetically-limited temperature range. In contrast, use of TEGa enabled 100-period SLs to be successfully grown even at lower temperature owing to its efficient pyrolysis process. Highly uniform SLs with negligible layer undulation were grown at 510 degrees C with TEGa, showing a photoluminescence spectrum which was as sharp as the one for SLs grown on an exact-oriented substrate. The absorption spectra for the SLs grown with TEGa showed similarly sharp edge with a strong exciton peak. (C) 2014 Elsevier B.V. All rights reserved,

    DOI: 10.1016/j.jcrysgro.2014.10.043

  • Light-Emitting Devices Based on Top-down Fabricated GaAs Quantum Nanodisks

    Akio Higo, Takayuki Kiba, Yosuke Tamura, Cedric Thomas, Junichi Takayama, Yunpeng Wang, Hassanet Sodabanlu, Masakazu Sugiyama, Yoshiaki Nakano, Ichiro Yamashita, Akihiro Murayama, Seiji Samukawa

    SCIENTIFIC REPORTS   5   2015年3月 (   ISSN:2045-2322 )

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    記述言語:英語   出版者・発行元:NATURE PUBLISHING GROUP  

    Quantum dots photonic devices based on the III-V compound semiconductor technology offer low power consumption, temperature stability, and high-speed modulation. We fabricated GaAs nanodisks (NDs) of sub-20-nm diameters by a top-down process using a biotemplate and neutral beam etching (NBE). The GaAs NDs were embedded in an AlGaAs barrier regrown by metalorganic vapor phase epitaxy (MOVPE). The temperature dependence of photoluminescence emission energies and the transient behavior were strongly affected by the quantum confinement effects of the embedded NDs. Therefore, the quantum levels of the NDs may be tuned by controlling their dimensions. We combined NBE and MOVPE in a high-throughput process compatible with industrial production systems to produce GaAs NDs with tunable optical characteristics. ND light emitting diode exhibited a narrow spectral width of 38 nm of high-intensity emission as a result of small deviation of ND sizes and superior crystallographic quality of the etched GaAs/AlGaAs layer.

    DOI: 10.1038/srep09371

  • InGaAs/GaAsP超格子の太陽電池における波状構造の影響

    加藤巧, 藤井宏昌, HASSANET Sodabanlu, 渡辺健太郎, 杉山正和, 中野義昭

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   62nd   ROMBUNNO.14A-A26-7   2015年2月

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    記述言語:日本語  

  • バイオテンプレート極限加工によるGaAs量子ナノディスクLEDの試作

    肥後昭男, 木場隆之, 木場隆之, THOMAS C, THOMAS C, WANG Y, 山下一郎, 山下一郎, 杉山正和, 中野義昭, 村山明宏, 村山明宏, 寒川誠二, 寒川誠二, 寒川誠二

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   62nd   ROMBUNNO.12P-A25-7   2015年2月

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    記述言語:日本語  

  • ハーフリッジ型導波路構造を用いたInPモノリシック偏波変調器の試作と実証

    川端祐斗, 財津優, 種村拓夫, 中野義昭

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   62nd   ROMBUNNO.12P-A17-1   2015年2月

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    記述言語:日本語  

  • 分極を制御したGa極性面上III族窒化物太陽電池の新規構造

    中村亮裕, 藤井克司, 杉山正和, 中野義昭

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   62nd   ROMBUNNO.14A-A26-1   2015年2月

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    記述言語:日本語  

  • 多接合太陽電池応用に向けたGaAs/Ge表面活性化接合技術の検討

    山下大之, 河野元紀, 渡辺健太郎, 杉山正和, 須賀唯知, 中野義昭

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   62nd   ROMBUNNO.13P-P19-16   2015年2月

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    記述言語:日本語  

  • 高効率格子整合4接合太陽電池に向けた実効バンドギャップ1.15eVのInGaAs/GaAsP歪補償量子井戸

    TOPRASERTPONG K, 藤井宏昌, THOMAS Tomos, FUEHRER Markus, ALONSO‐ALVAREZ Diego, FARRELL Daniel J, 渡辺健太郎, 岡田至崇, EKINS‐DAUKES Nicholas J, 杉山正和, 中野義昭

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   62nd   ROMBUNNO.14A-A26-9   2015年2月

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    記述言語:日本語  

  • C-3-1 InPモノリシック偏波制御/変調素子(光フィールド・偏波制御(1),C-3.光エレクトロニクス,一般セッション)

    種村 拓夫, 川端 祐斗, 財津 優, 中野 義昭

    電子情報通信学会総合大会講演論文集   2015 ( 1 )   125 - 125   2015年2月

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • Effect of number of stack on the thermal escape and non-radiative and radiative recombinations of photoexcited carriers in strain-balanced InGaAs/GaAsP multiple quantum-well-inserted solar cells

    Taketo Aihara, Atsuhiko Fukuyama, Hidetoshi Suzuki, Hiromasa Fujii, Masakazu Sugiyama, Yoshiaki Nakano, Tetsuo Ikari

    JOURNAL OF APPLIED PHYSICS   117 ( 8 )   2015年2月 (   ISSN:0021-8979   eISSN:1089-7550 )

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    記述言語:英語   出版者・発行元:AMER INST PHYSICS  

    Three non-destructive methodologies, namely, surface photovoltage (SPV), photoluminescence, and piezoelectric photothermal (PPT) spectroscopies, were adopted to detect the thermal carrier escape from quantum well (QW) and radiative and non-radiative carrier recombinations, respectively, in strain-balanced InGaAs/GaAsP multiple-quantum-well (MQW)-inserted GaAs p-i-n solar cell structure samples. Although the optical absorbance signal intensity was proportional to the number of QW stack, the signal intensities of the SPV and PPT methods decreased at high number of stack. To explain the temperature dependency of these signal intensities, we proposed a model that considers the three carrier dynamics: the thermal escape from the QW, and the non-radiative and radiative carrier recombinations within the QW. From the fitting procedures, it was estimated that the activation energies of the thermal escape Delta E-barr and non-radiative recombination Delta E-NR were 68 and 29 meV, respectively, for a 30-stacked MQW sample. The estimated Delta E-barr value agreed well with the difference between the first electron subband and the top of the potential barrier in the conduction band. We found that DEbarr remained constant at approximately 70 meV even with increasing QW stack number. However, the DENR value monotonically increased with the increase in the number of stack. Since this implies that non-radiative recombination becomes improbable as the number of stack increases, we found that the radiative recombination probability for electrons photoexcited within the QW increased at a large number of QW stack. Additional processes of escaping and recapturing of carriers at neighboring QW were discussed. As a result, the combination of the three non-destructive methodologies provided us new insights for optimizing the MQW components to further improve the cell performance. (C) 2015 AIP Publishing LLC.

    DOI: 10.1063/1.4913593

  • Carrier Time-of-Flight Measurement Using a Probe Structure for Direct Evaluation of Carrier Transport in Multiple Quantum Well Solar Cells

    Kasidit Toprasertpong, Naofumi Kasamatsu, Hiromasa Fujii, Tomoyuki Kada, Shigeo Asahi, Yunpeng Wang, Kentaroh Watanabe, Masakazu Sugiyama, Takashi Kita, Yoshiaki Nakano

    IEEE Journal of Photovoltaics   4 ( 6 )   1518 - 1525   2014年11月 (   ISSN:2156-3381 )

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    出版者・発行元:Institute of Electrical and Electronics Engineers ({IEEE})  

    © 2014 IEEE. Carrier transport across multiple quantum well (MQW) structures inserted in the i-region of a p-i-n diode is an important mechanism that determines the performance of MQW solar cells. We have employed a carrier time-of-flight measurement technique using a quantum-well probe to investigate the electron transport time across MQW structures. Delay of the carrier arrival time, defined as time-of-flight, caused by MQWs shows almost linear increment to the number of wells. Tunneling transport in InGaAs/GaAsP MQW structures is studied by varying the GaAsP barrier thickness. Barrier thickness of 2 nm results in extremely small electron time-of-flight, less than a hundred picoseconds per well, whereas MQW with 8-nm-thick barriers results in approximately 20 times slower transport. Furthermore, the fast time-of-flight in thin barriers shows no degradation after the insertion of GaAs interlayers that form the multistep potential. This suggests that the fast thermally assisted tunneling transport dominates the electron escape dynamics in thin-barrier InGaAs/GaAsP MQWs. The rapid carrier transport results in the significant suppression of current drop at the cell maximum power point of MQW solar cells.

    DOI: 10.1109/jphotov.2014.2354256

  • Electrical pumping Fabry-Perot lasing of a III-V layer on a highly doped silicon micro rib

    Linghan Li, Ryo Takigawa, Akio Higo, Eiji Higurashi, Masakazu Sugiyama, Bingyao Liu, Yoshiaki Nakano

    LASER PHYSICS LETTERS   11 ( 11 )   2014年11月 (   ISSN:1612-2011   eISSN:1612-202X )

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    記述言語:英語   出版者・発行元:IOP PUBLISHING LTD  

    Direct-current-pumped Fabry-Perot lasing was observed from a Si/III-V hybrid laser fabricated by the Ar/O-2 plasma assisted direct bonding of an InP-based III-V active layer on a highly doped silicon micro rib. Electrical pumping from a silicon micro rib to InGaAsP multiple quantum wells (MQWs) for generating CW Fabry-Perot lasing was successfully demonstrated at a threshold current of 65 mA at 5 degrees C. The semiconductive and optical properties of the hetero-junction between the silicon micro rib and InGaAsP MQWs under direct current injection were measured and discussed.

    DOI: 10.1088/1612-2011/11/11/115807

  • InGaAs/GaAsP superlattice solar cells with reduced carbon impurity grown by low-temperature metal-organic vapor phase epitaxy using triethylgallium

    Hiromasa Fujii, Kasidit Toprasertpong, Hassanet Sodabanlu, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano

    Journal of Applied Physics   116 ( 20 )   203101 - 203101   2014年11月 (   ISSN:0021-8979 )

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    出版者・発行元:{AIP} Publishing  

    © 2014 AIP Publishing LLC. In this paper, we investigated the effects of carbon incorporation on photovoltaic performance of InGaAs/GaAsP superlattice (SL) solar cells grown by low-temperature MOVPE (LT-MOVPE), which is required for stable SL growth on vicinal substrates. Using trimethylgallium (TMGa) as the gallium precursor, methyl radicals formed by its pyrolysis tend to be absorbed on the surface at low temperature, causing severe carbon incorporation and p-type background doping. High background carrier concentration flattens the band-lineup of the intrinsic region and blocks the carrier transport across the SLs, and resulted in serious degradation of photocurrent. Intentional sulfur doping to cancel out the background doping and hence to recover the built-in field greatly improved the cell performance, but was found to require very precise control of doping level to achieve an exact compensation doping condition. Use of triethylgallium (TEGa) instead of TMGa much reduced the carbon incorporation at low temperature and significantly enhanced the photocurrent extraction without sulfur doping treatment. By thinning GaAsP barriers to 3 nm to facilitate efficient tunneling transport, a 50-period SL cell with bandgap of 1.22 eV grown on 6°-miscut substrates achieved 1.13 times higher efficiency with 31% current enhancement as middle cell performance than a GaAs reference cell.

    DOI: 10.1063/1.4902319

  • Proposal and numerical study on capsule-shaped nanometallic semiconductor lasers

    Baifu Zhang, Takuya Okimoto, Takuo Tanemura, Yoshiaki Nakano

    JAPANESE JOURNAL OF APPLIED PHYSICS   53 ( 11 )   2014年11月 (   ISSN:0021-4922   eISSN:1347-4065 )

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    記述言語:英語   出版者・発行元:IOP PUBLISHING LTD  

    We propose a novel subwavelength metallic InP/InGaAs laser with a capsule-shaped cavity. By introducing curved metallic facets at the both ends, resonant modes can be strongly confined inside the center of the cavity, which not only improves the confinement factor and the Q factor, but also reduces the cavity volume. As an example case, we numerically demonstrate that the proposed structure can decrease the plasmonic loss and improve the Q factor from 197 to 297 and reduce the threshold current from 291 to 60 mu A with the effective modal volume of 0.45 mu m(3). In addition, we demonstrate that there exists an optimal structure of the capsule-shaped cavity to minimize the current threshold. (C) 2014 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.53.112703

  • InPモノリシック集積ストークスベクトル変調器の提案と実証

    種村拓夫, 川端祐斗, 財津優, 中野義昭

    電子情報通信学会技術研究報告   114 ( 282(OPE2014 85-126) )   147 - 152   2014年10月 (   ISSN:0913-5685 )

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    記述言語:日本語  

  • C-3-8 1×N Nyquist-Sampling Phased-Array Switch for Extinction Ratio Improvement

    Cui Ming, Tanemura Takuo, Nakano Yoshiaki

    電子情報通信学会ソサイエティ大会講演論文集   2014 ( 1 )   105 - 105   2014年9月

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    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

  • GaN/AlN/GaNフォトカソードにおけるAlN成長温度依存

    中村亮裕, 藤井克司, 杉山正和, 中野義昭

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   75th   ROMBUNNO.18P-C5-2   2014年9月

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    記述言語:日本語  

  • InP/InGaAsPモノリシック偏波変調器の提案と実証

    川端祐斗, 財津優, 種村拓夫, 中野義昭

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   75th   ROMBUNNO.18A-C6-8   2014年9月

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    記述言語:日本語  

  • TEGaを用いた低温MOVPEによる微傾斜基板上InGaAs/GaAsP超格子太陽電池

    藤井宏昌, WANG Yunpeng, SODABANLU Hassanet, 渡辺健太郎, 杉山正和, 中野義昭

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   75th   ROMBUNNO.19A-S1-2   2014年9月

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    記述言語:日本語  

  • Si上InGaAs microdiskにおけるSドーパントの局在化

    渡邉冬馬, 竹内美由紀, 中野義昭, 杉山正和

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   75th   ROMBUNNO.18A-A20-2   2014年9月

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    記述言語:日本語  

  • バイオテンプレート極限加工によるInGaAs量子ナノディスクの光学特性評価

    肥後昭男, 木場隆之, THOMAS C, LEE C.Y, 吉川憲一, 田村洋典, 山下一郎, WANG Y, SODABANLU H, 杉山正和, 中野義昭, 村山明宏, 寒川誠二

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   75th   ROMBUNNO.18P-A27-8   2014年9月

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    記述言語:日本語  

  • キャリア走行時間測定法による量子構造太陽電池内のダイナミクスの直接観測

    TOPRASERTPONG Kasidit, 笠松直史, 藤井宏昌, 加田智之, 朝日重雄, WANG Yunpeng, 渡辺健太郎, 杉山正和, 喜多隆, 中野義昭

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   75th   ROMBUNNO.17P-A28-1   2014年9月

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    記述言語:日本語  

  • 圧電素子光熱分光法を用いた超格子太陽電池のミニバンド評価

    相原健人, 村上匠, 倉留弘憲, 杉本泰士, 鈴木秀俊, 福山敦彦, 杉山正和, 中野義昭, 碇哲雄

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   75th   ROMBUNNO.17P-A28-2   2014年9月

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    記述言語:日本語  

  • 裏面微細構造による薄膜化III‐V族化合物半導体太陽電池の光閉じ込め効果

    渡辺健太郎, 井上智之, 杉山正和, 中野義昭

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   75th   ROMBUNNO.18A-A28-3   2014年9月

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    記述言語:日本語  

  • 非発光再結合検出による量子ナノ構造太陽電池材料評価

    福山敦彦, 杉山正和, 中野義昭, 碇哲雄

    日本結晶成長学会誌   41 ( 2 )   50 - 57   2014年9月

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    記述言語:日本語   掲載種別:研究発表ペーパー・要旨(全国大会,その他学術会議)   出版者・発行元:日本結晶成長学会  

  • 高キャリア密度ITO層を用いたシリコンリブ導波路変調器の解析

    綾田雅文, 種村拓夫, 中野義昭

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   75th   ROMBUNNO.18A-C6-6   2014年9月

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    記述言語:日本語  

  • Strain effect for different phosphorus content of InGaAs/GaAsP super-lattice in GaAs p-i-n single junction solar cell

    Kentaroh Watanabe, Yunpeng Wang, Hassanet Sodabanlu, Masakazu Sugiyama, Yoshiaki Nakano

    JOURNAL OF CRYSTAL GROWTH   401   712 - 716   2014年9月 (   ISSN:0022-0248   eISSN:1873-5002 )

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    記述言語:英語   出版者・発行元:ELSEVIER SCIENCE BV  

    The GaAs p-i-n single junction solar cell with InGaAs/GaAsP super lattice (SL) in the i-region was fabricated by metal organic vapor phase epitaxy (MOVPE). Using the in situ wafer curvature monitoring, a series of SL solar cell samples with different phosphorus composition in the barrier GaAsP layer was evaluated the accumulated strain during MOVPE growth. The sample with larger phosphorus content in GaAsP barrier layer reduced total strain accumulation, resulted in improved solar cell performance regardless to the higher potential barrier. This result indicated the about 3-nm thick barrier is sufficiently thin for carrier extraction by assisting the tunneling effect. Furthermore, the accumulated strain during MOVPE growth of SL deteriorate solar cell. (C) 2014 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jcrysgro.2013.02.053

  • 量子井戸太陽電池におけるキャリアの非発光再結合および輸送特性

    杉本泰士, 相原健人, 杉山正和, 中野義昭, 福山敦彦, 碇哲雄

    宮崎大学工学部紀要(Web)   43 ( 43 )   17-20 (WEB ONLY) - 20   2014年7月 (   ISSN:0540-4924 )

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    記述言語:日本語   出版者・発行元:宮崎大学  

  • 量子井戸太陽電池におけるキャリアの非発光再結合および輸送特性

    杉本 泰士, 相原 健人, 杉山 正和, 中野 義昭, 福山 敦彦, 碇 哲雄

    宮崎大學工學部紀要   43   17 - 20   2014年7月 (   ISSN:0540-4924 )

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    記述言語:日本語   出版者・発行元:宮崎大学工学部  

    To investigate the carrier generation, thermal escape, and recombination processes in the strain-balanced InGaAs/GaAsP multiple quantum well (MQW) structure into GaAs p-i-n solar cell, the frequency-dependent piezoelectric photothermal (PPT) method was adopted. Since the thermal diffusion length of the signal source decreases with increasing the chopping frequency, we investigated the depth profile of non-radiative recombination carrier loss. Two distinctive peaks were observed in the lower photon energy region below the bandgap of GaAs (Eg, 1.42 eV at RT) for the MQW structure inserted sample. They were caused by the excitonic absorption associated with the inter-subband transitions within the MQWs. Although PPT signal intensity at above the bandgap of GaAs decreased with increasing the chopping frequency, the signal intensity at MQW remained even at high frequency. These features are explainable in terms that photoexcited carriers thermally escape from MQW and diffuse to the GaAs substrate. Diffused carriers then recombine at GaAs substrate non-radiatively.

  • 量子井戸太陽電池におけるキャリアの非発光再結合および輸送特性

    杉本 泰士, 相原 健人, 杉山 正和, 中野 義昭, 福山 敦彦, 碇 哲雄

    宮崎大學工學部紀要   43   17 - 20   2014年7月 (   ISSN:0540-4924 )

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    記述言語:日本語   出版者・発行元:宮崎大学  

  • Detection of miniband formation in strain-balanced InGaAs/GaAsP quantum well solar cells by using a piezoelectric photothermal spectroscopy

    Taketo Aihara, Atsuhiko Fukuyama, Yuki Yokoyama, Michiya Kojima, Hidetoshi Suzuki, Masakazu Sugiyama, Yoshiaki Nakano, Tetsuo Ikari

    JOURNAL OF APPLIED PHYSICS   116 ( 4 )   2014年7月 (   ISSN:0021-8979   eISSN:1089-7550 )

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    記述言語:英語   出版者・発行元:AMER INST PHYSICS  

    To investigate the effect of the miniband formation on the optical absorption spectrum, we adopted two non-destructive methodologies of piezoelectric photothermal (PPT) and photoreflectance (PR) spectroscopies for strain-balanced InGaAs/GaAsP multiple quantum-well (MQW) and superlattice (SL) structures inserted GaAs p-i-n solar cells. Because the barrier widths of the SL sample were very thin, miniband formations caused by coupling the wave functions between adjacent wells were expected. From PR measurements, a critical energy corresponding to the inter-subband transition between first-order electron and hole subbands was estimated for MQW sample, whereas two critical energies corresponding to the mini-Brillouin-zone center (Gamma) and edge (pi) were obtained for SL sample. The miniband width was calculated to be 19 meV on the basis of the energy difference between Gamma and pi. This coincided with the value of 16 meV calculated using the simple Kronig-Penney potential models. The obtained PPT spectrum for the SL sample was decomposed into the excitonic absorption and inter-miniband transition components. The latter component was expressed using the arcsine-like signal rise corresponding to the Gamma point in the mini-Brillouin zone that was enhanced by the Sommerfeld factor. The usefulness of the PPT methodology for investigating the inserted MQW and/or SL structure inserted solar cells is clearly demonstrated. (C) 2014 AIP Publishing LLC.

    DOI: 10.1063/1.4887443

  • Thin-Film InGaAs/GaAsP MQWs Solar Cell With Backside Nanoimprinted Pattern for Light Trapping

    Kentaroh Watanabe, Boram Kim, Tomoyuki Inoue, Hassanet Sodabanlu, Masakazu Sugiyama, Masanao Goto, Shinya Hayashi, Kenjiro Miyano, Yoshiaki Nakano

    IEEE JOURNAL OF PHOTOVOLTAICS   4 ( 4 )   1086 - 1090   2014年7月 (   ISSN:2156-3381 )

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    記述言語:英語   出版者・発行元:IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC  

    A light-trapping structure of the thin-film GaAs p-i-n single-junction solar cell with InGaAs/GaAsP multiple quantum wells (MQWs) was successfully demonstrated. Using a nanoimprinting method with ultraviolet curing resin, the submicron light-scattering dielectric array was fabricated on the back surface of the cell for enhanced optical absorption in the MQWs. The epitaxially grown photovoltaic active layer approximately 2.5 mu m in thickness was successfully transferred to the stainless steel support substrate with backside light-scattering structure from the GaAs growth substrate. The light-trapping pattern-induced sample showed improved absorption in MQWs and resulted in 1.7 times larger quantum efficiency than the cell without the backside pattern.

    DOI: 10.1109/JPHOTOV.2014.2312486

  • ナノ・ヘテロ構造を利用した太陽電池 非発光再結合検出による量子ナノ構造太陽電池材料評価

    福山敦彦, 杉山正和, 中野義昭, 碇哲雄

    日本結晶成長学会誌(CD-ROM)   41 ( 2 )   102 - 109   2014年7月 (   ISSN:0385-6275 )

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    記述言語:日本語  

    DOI: 10.19009/jjacg.41.2_102

  • ナノ・ヘテロ構造を利用した太陽電池 多接合太陽電池の高効率化にむけた歪み補償量子井戸超格子

    杉山正和, 藤井宏昌, TOPRASERTPONG Kasidit, SODABANLU Hassanet, WANG Yunpeng, 渡辺健太郎, 中野義昭

    日本結晶成長学会誌(CD-ROM)   41 ( 2 )   87 - 95   2014年7月 (   ISSN:0385-6275 )

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    記述言語:日本語  

    DOI: 10.19009/jjacg.41.2_87

  • Growth of InGaAs/GaAsP multiple quantum well solar cells on mis-orientated GaAs substrates

    Hassanet Sodabanlu, Yunpeng Wang, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano

    JOURNAL OF APPLIED PHYSICS   115 ( 23 )   2014年6月 (   ISSN:0021-8979   eISSN:1089-7550 )

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    記述言語:英語   出版者・発行元:AMER INST PHYSICS  

    The effects of growth temperature on the properties of InGaAs/GaAsP multiple quantum well (MQW) solar cells on various mis-orientated GaAs substrates were studied using metalorganic vapor phase epitaxy. Thickness modulation effect caused by mismatch strain of InGaAs/GaAsP could be suppressed by low growth temperature. Consequently, abrupt MQWs with strong light absorption could be deposited on mis-oriented substrates. However, degradation in crystal quality and impurity incorporation are the main drawbacks with low temperature growth because they tend to strongly degraded carrier transport and collection efficiency. MQW solar cells grown at optimized temperature showed the better conversion efficiency. The further investigation should focus on improvement of crystal quality and background impurities. (C) 2014 AIP Publishing LLC.

    DOI: 10.1063/1.4884678

  • Near-infrared electroluminescence and photo detection in InGaAs p-i-n microdisks grown by selective area growth on silicon

    Jon Oyvind Kjellman, Masakazu Sugiyama, Yoshiaki Nakano

    APPLIED PHYSICS LETTERS   104 ( 24 )   2014年6月 (   ISSN:0003-6951   eISSN:1077-3118 )

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    記述言語:英語   出版者・発行元:AMER INST PHYSICS  

    Microselective-area growth of p-i-n InGaAs disks on (111) silicon by metalorganic chemical vapor deposition is a promising technology for III/V-on-Si integration. As a proof-of-concept, room-temperature electroluminescence is reported from ensembles of p-i-n InGaAs-on-Si micro-disks. The observed spectrum shows peak luminescence at 1.78 mu m with a local maxima at 1.65 mu m. The disks are also shown to generate a measurable photo current when illuminated by infrared light with less energy than the silicon bandgap energy. This makes these InGaAs-on-Si disks a promising technology for monolithic integration of light sources and detectors with silicon photonics and complementary metal-oxide-semiconductor electronics for optical communication, sensing, and imaging. (C) 2014 AIP Publishing LLC.

    DOI: 10.1063/1.4884058

  • 水の電気分解用酸素発生触媒CaMn2O4・xH2Oの触媒特性の結晶性依存性

    瀧勇也, 藤井克司, 杉山正和, 中野義昭

    日本化学会講演予稿集   94th ( 1 )   62   2014年3月 (   ISSN:0285-7626 )

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    記述言語:日本語  

  • C-3-32 InPモノリシック集積偏波変換器の作製と機能偏波素子への展開(光導波路回路,C-3.光エレクトロニクス,一般セッション)

    財津 優, 種村 拓夫, 中野 義昭

    電子情報通信学会総合大会講演論文集   2014 ( 1 )   187 - 187   2014年3月

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • バイオテンプレート極限加工による超高密度(1011cm-2以上)・均一GaAsナノディスクの作製プロセス

    田村洋典, 肥後昭男, THOMAS C, 吉川憲一, 岡田健, W. Yunpeng, 杉山正和, 中野義昭, 寒川誠二

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   61st   ROMBUNNO.17P-E15-8   2014年3月

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    記述言語:日本語  

  • バイオテンプレート極限加工によるGaAs量子ナノディスクの狭帯域フォトルミネッセンス特性

    肥後昭男, 田村洋典, 木場隆之, THOMAS C, WANG Y, 山下一郎, 杉山正和, 中野義昭, 村山明宏, 寒川誠二

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   61st   ROMBUNNO.17P-E15-9   2014年3月

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    記述言語:日本語  

  • プローブ構造を用いた量子構造太陽電池におけるキャリア走行時間の測定

    TOPRASERTPONG Kasidit, 笠松直史, 藤井宏昌, 加田智之, 朝日重雄, WANG Yunpeng, 渡辺健太郎, 杉山正和, 喜多隆, 中野義昭

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   61st   ROMBUNNO.19P-D7-11   2014年3月

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    記述言語:日本語  

  • プラズモニックInP導波路デバイスのための金属グレーティングカプラの設計

    野尻悠平, 種村拓夫, 中野義昭

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   61st   ROMBUNNO.20P-F8-1   2014年3月

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    記述言語:日本語  

  • 多接合太陽電池への応用に向けたGaAs/Ge表面活性化接合技術の検討

    山下大之, 河野元紀, 渡辺健太郎, 杉山正和, 須賀唯知, 中野義昭

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   61st   ROMBUNNO.19P-F4-9   2014年3月

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    記述言語:日本語  

  • 微傾斜基板上InGaAs/GaAsP超格子太陽電池の作製

    藤井宏昌, WANG Yunpeng, SODABANLU Hassanet, 渡辺健太郎, 杉山正和, 中野義昭

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   61st   ROMBUNNO.18P-PG4-3   2014年3月

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    記述言語:日本語  

  • 金属キャビティTMモードMQWレーザの設計と試作

    沖本拓也, 財津優, ZHANG Baihu, 井上智之, 種村拓夫, 中野義昭

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   61st   ROMBUNNO.20A-F8-9   2014年3月

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    記述言語:日本語  

  • 量子井戸太陽電池における裏面分布ブラッグ反射鏡を利用した光閉じ込め効果の増大

    井上智之, 渡辺健太郎, 杉山正和, 中野義昭

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   61st   ROMBUNNO.19P-D7-17   2014年3月

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    記述言語:日本語  

  • 多接合型太陽電池のためのGeとGaAsの表面活性化接合

    河野元紀, 藤野真久, 山下大之, 渡辺健太郎, 杉山正和, 中野義昭, 須賀唯知

    精密工学会大会学術講演会講演論文集   2014   ROMBUNNO.E21   2014年3月

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    記述言語:日本語  

  • Carrier Escape Time and Temperature-Dependent Carrier Collection Efficiency of Tunneling-Enhanced Multiple Quantum Well Solar Cells

    Kasidit Toprasertpong, Hiromasa Fujii, Yunpeng Wang, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano

    IEEE Journal of Photovoltaics   4 ( 2 )   607 - 613   2014年3月 (   ISSN:2156-3381 )

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    出版者・発行元:Institute of Electrical and Electronics Engineers ({IEEE})  

    Tunneling enhancement of cell performance in InGaAs/GaAsP multiple quantum well (MQW) solar cells has been studied to investigate the potential in overcoming the carrier collection problem, which hinders the maximum performance of quantum structure solar cells. To accurately investigate the effects of the tunneling effect, the study was carried out in samples with different GaAsP barrier thickness, controlled absorption edge, and constant built-in field. The tunneling effect has been confirmed by evaluating carrier escape times using the time-resolved photoluminescence technique and measuring carrier collection efficiency at various temperatures. The collection efficiencies at low temperature are found to be remarkably improved when barrier thickness was below 3 nm, which can be regarded as the critical thickness for efficiently facilitating tunneling enhancement. It can also be concluded that the carrier transport model based on thermal and tunneling processes is practical enough to describe most of the carrier sweep-out dynamics in MQW solar cells. © 2013 IEEE.

    DOI: 10.1109/jphotov.2013.2293877

  • MOVPE法によるGaN/AlN共鳴トンネルダイオード構造の作製―窒化物量子井戸構造の解析―

    伊藤成顕, SODABANLU Hassanet, 杉山正和, 中野義昭

    電子情報通信学会技術研究報告   113 ( 449(ED2013 132-149) )   55 - 59   2014年2月 (   ISSN:0913-5685 )

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    GaN/AlNのコンダクションバンドオフセット(Conduction Band Offset:CBO)は2.1eVと他の化合物半導体に比べて高く、この材料による量子井戸を用いた共鳴トンネルダイオード(Resonant Tunneling Diode:RTD)は負性抵抗において高PV比(Peak to Valley Ratio:PVR)を持つと期待される。一方、量産に適した有機金属気相成長(MOVPE)で作製したGaN/AlN界面の組成分布は急峻でなく、MOVPEで作製した素子は期待通りの特性を示さない可能性がある。そこで我々は、界面の組成非急峻性をGaN/AlN量子井戸のサブバンド間遷移(Intersubband transition:ISBT)によるスペクトルの測定と理論解析により評価し、RTD構造のバンド計算に反映させることで、RTDの作製に適した結晶成長条件を見出した。さらに、実際にMOVPEで共鳴トンネルダイオード構造を作製し、負性抵抗を確認した。

  • MOVPE法によるGaN/AlN共鳴トンネルダイオード構造の作製 : 窒化物量子井戸構造の解析(機能ナノデバイス及び関連技術)

    伊藤 成顕, ソダーバンル ハッサネット, 杉山 正和, 中野 義昭

    電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス   113 ( 450 )   55 - 59   2014年2月

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    GaN/AlNのコンダクションバンドオフセット(Conduction Band Offset:CBO)は2.1eVと他の化合物半導体に比べて高く、この材料による量子井戸を用いた共鳴トンネルダイオード(Resonant Tunneling Diode:RTD)は負性抵抗において高PV比(Peak to Valley Ratio:PVR)を持つと期待される。一方、量産に適した有機金属気相成長(MOVPE)で作製したGaN/AlN界面の組成分布は急峻でなく、MOVPEで作製した素子は期待通りの特性を示さない可能性がある。そこで我々は、界面の組成非急峻性をGaN/AlN量子井戸のサブバンド間遷移(Intersubband transition:ISBT)によるスペクトルの測定と理論解析により評価し、RTD構造のバンド計算に反映させることで、RTDの作製に適した結晶成長条件を見出した。さらに、実際にMOVPEで共鳴トンネルダイオード構造を作製し、負性抵抗を確認した。

  • MOVPE法によるGaN/AlN共鳴トンネルダイオード構造の作製 : 窒化物量子井戸構造の解析(機能ナノデバイス及び関連技術)

    伊藤 成顕, ソダーバンル ハッサネット, 杉山 正和, 中野 義昭

    電子情報通信学会技術研究報告. ED, 電子デバイス   113 ( 449 )   55 - 59   2014年2月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    GaN/AlNのコンダクションバンドオフセット(Conduction Band Offset:CBO)は2.1eVと他の化合物半導体に比べて高く、この材料による量子井戸を用いた共鳴トンネルダイオード(Resonant Tunneling Diode:RTD)は負性抵抗において高PV比(Peak to Valley Ratio:PVR)を持つと期待される。一方、量産に適した有機金属気相成長(MOVPE)で作製したGaN/AlN界面の組成分布は急峻でなく、MOVPEで作製した素子は期待通りの特性を示さない可能性がある。そこで我々は、界面の組成非急峻性をGaN/AlN量子井戸のサブバンド間遷移(Intersubband transition:ISBT)によるスペクトルの測定と理論解析により評価し、RTD構造のバンド計算に反映させることで、RTDの作製に適した結晶成長条件を見出した。さらに、実際にMOVPEで共鳴トンネルダイオード構造を作製し、負性抵抗を確認した。

  • Effect of internal electric field on non-radiative carrier recombination in the strain-balanced InGaAs/GaAsP multiple quantum well solar cells

    Atsuhiko Fukuyama, Taketo Aihara, Yuki Yokoyama, Michiya Kojima, Hiromasa Fujii, Hidetoshi Suzuki, Masakazu Sugiyama, Yoshiaki Nakano, Tetsuo Ikari

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   211 ( 2 )   444 - 448   2014年2月 (   ISSN:1862-6300   eISSN:1862-6319 )

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    記述言語:英語   出版者・発行元:WILEY-V C H VERLAG GMBH  

    Effect of an internal built-in electric field on the non-radiative recombination process of strain-balanced InGaAs/GaAsP multiple quantum wells (MQWs) inserted into a GaAs p-i-n solar cell structure was investigated using the piezoelectric photo-thermal technique. From the experimental data obtained from two types of p-i-n solar cell structures with partly charge-neutral and uniform-gradient potentials, the decrease in the built-in electric field contributed to the decrease in the non-radiative carrier recombination in the MQW. This phenomenon was especially pronounced in the higher photon energy of the incident light and in large quantum well stack number. With the increase in the photon energy, the penetration length shortened, and most carriers were generated in the charge-neutral area in the i-region. The present experimental results could be understood by the increase in the radiative recombination processes within the MQW because of the wave function overlap is essentially unity.

    DOI: 10.1002/pssa.201300390

  • Large scale switching and polarization control in photonic integrated circuits on InP and Si

    Yoshiaki Nakano, Takuo Tanemura

    Asia Communications and Photonics Conference, ACP   2014年1月 (   ISSN:2162-108X )

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    © 2014 OSA. Our research on optical phased-array switches on InP and Si substrates is reviewed, including a strictly non-blocking 8×8 switch on InP. We demonstrate nanoseconds reconfiguration time, ultra-broad optical bandwidth covering the entire C-band, and error-free transmission of 40-Gbps (10-Gbps × 4ch) WDM signal. Then, our recent activity to manipulate polarizations in photonic integrated circuits is reviewed, such as development of half-ridge InP/InGaAsP polarization converters and their integration with active devices.

  • Evaluation of Carrier Collection Efficiency in Multiple Quantum Well Solar Cells

    Hiromasa Fujii, Kasidit Toprasertpong, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano

    IEEE Journal of Photovoltaics   4 ( 1 )   237 - 243   2014年1月 (   ISSN:2156-3381 )

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    出版者・発行元:Institute of Electrical and Electronics Engineers ({IEEE})  

    The carrier collection efficiency (CCE) is proposed as an effective parameter for indicating the efficiency of carrier transport in quantum nanostructured solar cells. The CCE can be estimated by normalizing the illumination-induced current enhancement to its saturation value at reverse bias. The derivation procedure for the CCE is experimentally validated by examining the bias-dependence of light absorption, and by investigating the balance between the absorbed photons and collected carriers at reverse bias. The effect of AM1.5 bias-illumination for CCE characterization was also investigated and found to be significant for more accurate evaluation of carrier dynamics during actual device operation under sunlight. Furthermore, simulation of the resistance effects showed that a large series resistance leads to underestimation of the CCE at forward bias whereas a shunt resistance has only a slight influence on the CCE calculation. © 2013 IEEE.

    DOI: 10.1109/jphotov.2013.2287994

  • Capsule-Shaped Metallic-Cavity Laser with Reduced Plasmonic Loss

    Baifu Zhang, Takuya Okimoto, Takuo Tanemura, Yoshiaki Nakano

    2014 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)   2014年 (   ISSN:2160-9020 )

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    記述言語:英語   出版者・発行元:IEEE  

    We propose novel 1.55-mu m capsule-shaped metallic-cavity lasers with curved facets to reduce plasmonic losses. Significant reduction of threshold current from 291 mu A to 60 mu A is demonstrated with effective modal volume of 0.45 mu m(3).

  • A nitride based polarization-engineered photocathode for water splitting without a p-type semiconductor

    Akihiro Nakamura, Katsushi Fujii, Masakazu Sugiyama, Yoshiaki Nakano

    PHYSICAL CHEMISTRY CHEMICAL PHYSICS   16 ( 29 )   15326 - 15330   2014年 (   ISSN:1463-9076   eISSN:1463-9084 )

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    記述言語:英語   出版者・発行元:ROYAL SOC CHEMISTRY  

    Photoelectrochemical water splitting is a promising way for hydrogen production with low environmental burden. Although III-nitride semiconductors have potentially favorable properties as water splitting photoelectrodes, they have several limitations for practical use currently. In this study, the concept of a polarization-engineered nitride photocathode for water splitting is proposed to overcome this problem. We observed that the proposed GaN/AlN/GaN structure worked as a photocathode even though it consisted of only n-type III-nitride semiconductors. This polarization-engineered photocathode showed a remarkably stable and relatively high photocurrent since it can avoid the causes of problems from which both n-type and p-type conventional GaN photoelectrodes suffer.

    DOI: 10.1039/c4cp01599a

  • A NOx and SO2 gas analyzer using deep-UV and violet light-emitting diodes for continuous emissions monitoring systems

    Ryoichi Higashi, Yu Taniguchi, Kozo Akao, Kazuhiro Koizumi, Noritomo Hirayama, Yoshiaki Nakano

    LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XVIII   9003   2014年 (   ISSN:0277-786X   eISSN:1996-756X )

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    記述言語:英語   出版者・発行元:SPIE-INT SOC OPTICAL ENGINEERING  

    A nitrogen oxides (NOx) and sulfur dioxide (SO2) gas analyzer using deep ultraviolet (DUV) and violet light-emitting diodes (LEDs) is developed. The LEDs with wavelengths of 280 nm and 400 nm were alternately turned on to detect SO2 and nitrogen dioxide (NO2) absorption. Nitric oxide (NO) was converted to NO2 with an ozonizer. In order to reduce water interference caused by water adsorption onto an inner surface of a gas flow cell, collimating optics reducing reflected lights were designed. As a result, less than 1% by full scale (%F.S.) of fluctuation, 2%F.S. of drift and 0.5%F.S. of water interference were achieved in 0-50 ppm concentration range. Conversion efficiency from NO to NO2 was over 95%.

    DOI: 10.1117/12.2036159

  • Capsule-Shaped Metallic-Cavity Laser with Reduced Plasmonic Loss

    Baifu Zhang, Takuya Okimoto, Takuo Tanemura, Yoshiaki Nakano

    2014 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)   2014年 (   ISSN:2160-9020 )

     詳細

    記述言語:英語   出版者・発行元:IEEE  

    We propose novel 1.55-mu m capsule-shaped metallic-cavity lasers with curved facets to reduce plasmonic losses. Significant reduction of threshold current from 291 mu A to 60 mu A is demonstrated with effective modal volume of 0.45 mu m(3).

  • Capsule-Shaped Metallic-Cavity Laser with Reduced Plasmonic Loss

    Baifu Zhang, Takuya Okimoto, Takuo Tanemura, Yoshiaki Nakano

    2014 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)   2014年 (   ISSN:2160-9020 )

     詳細

    記述言語:英語   出版者・発行元:IEEE  

    We propose novel 1.55-mu m capsule-shaped metallic-cavity lasers with curved facets to reduce plasmonic losses. Significant reduction of threshold current from 291 mu A to 60 mu A is demonstrated with effective modal volume of 0.45 mu m(3).

  • Fabrication of InGaAs quantum nanodisks array by using bio-template and top-down etching processes

    K. Yoshikawa, A. Higo, C. Y. Lee, Y. Tamura, C. Thomas, T. Kiba, S. Ishii, H. Sodabanlu, Y. Wang, M. Sugiyama, Y. Nakano, I. Yamashita, A. Murayama, S. Samukawa

    2014 IEEE 14TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO)   211 - 214   2014年

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    記述言語:英語   出版者・発行元:IEEE  

    III-V compound semiconductor quantum dot (QD) optical devices, such as high-power lasers and high-speed modulators, have great potential for the future of telecommunications and quantum cryptographic communication. We developed a top-down method for fabricating InGaAs quantum nanodisks (NDs) arrays by using bio-template and neutral beam etching (NBE) processes. Damage-free InGaAs/GaAs nano-pillar structures were successfully fabricated for the first time. After NBE, InGaAs NDs were embedded in the GaAs barrier layer by metalorganic vapor phase epitaxy. Subsequently, the photoluminescence was measured and the emission originating from the NDs could be directly detected.

    DOI: 10.1109/NANO.2014.6967975

  • Directly bonded Ge/GaAs by surface activated bonding for high efficiency III- V multi-junction solar cells

    Genki Kono, Masahisa Fujino, Daiji Yamashita, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano, Tadatomo Suga

    2014 4TH IEEE INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D)   50 - 50   2014年

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    記述言語:英語   出版者・発行元:IEEE  

    Ge/GaAs wafers have been bonded by surface activated bonding. TEM observation of the bonded interface shows that amorphous layer with thickness of about 5 nm has been formed. I-V characteristic of directly bonded p-Ge/p-GaAs shows diode-like properties. The electrical resistance of the bonded interface has achieved about 0.16 Omega cm2 at 0.1 V.

    DOI: 10.1109/LTB-3D.2014.6886189

  • In-situ growth condition analysis of AlN interlayers for wafer curvature control in GaN MOVPE on Si (111)

    Cai Liu, Akihito Kumamoto, Hassanet Sodabanlu, Masakazu Sugiyama, Yoshiaki Nakano

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4   11 ( 3-4 )   598 - 603   2014年 (   ISSN:1862-6351 )

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    記述言語:英語   出版者・発行元:WILEY-V C H VERLAG GMBH  

    Effects of AlN interlayers growth conditions including thickness, temperature and V/III ratio on wafer bowing control in GaN MOVPE on Si (111) were studied by in-situ curvature analysis. Simple methodology was applied, namely, multi-condition growth and single-condition growth, to survey the effects of growth conditions. Based on the results of this study, a proper AlN interlayer, which can introduce largest compressive stress in overlying GaN layer, was approximately 6 similar to 9 nm in thickness and grown at 900 degrees C, and V/III ratio of 1503. Based on in-situ curvature observation, strategies were proposed for obtaining an AlN interlayer that applies the maximum compressive strain to an overlying GaN and to minimize the wafer bow at room temperature: (1) The bottom interface of an AlN interlayer should be incoherent and relaxed as much as possible with respect to the underlying GaN, for which lower temperature is preferable, (2) the top interface of an AlN interlayer should be coherent so that the overlying GaN can grow without high dislocation density at the interface and rapid relaxation, for which a moderate temperature and V/III ratio are preferable, (3) the thickness of an AlN interlayer should be limited less than the critical value for cracking. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

    DOI: 10.1002/pssc.201300528

  • Monolithic InGaAs-on-Si micro-disk ensemble LED with peak luminescence at 1.58 μm

    Jon Øyvind, Kjellman, Takuo Tanemura, Masakazu Sugiyama, Yoshiaki Nakano

    Conference Proceedings - International Conference on Indium Phosphide and Related Materials   2014年 (   ISSN:1092-8669 )

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    記述言語:英語  

    Ensembles of p-i-n InGaAs micro-discs, grown by micro selective-area metalorganic chemical vapor deposition are fabricated into LED structures. These structures exhibit electroluminescence with spectral peaks at 1580 nm, a sharp roll-off at 1590 nm and a full-width half-maximum in excess of 90 nm depending on injection current. This spectrum covers the entire C-band and establishes monolithic InGaAs-on-Si as a potential candidate for filling the need for on-silicon light-sources. © 2014 IEEE.

    DOI: 10.1109/ICIPRM.2014.6880586

  • Numerical Study on Hollow Hexagonal InGaAs Microdisk Laser on Silicon

    Yufeng Fu, Baifu Zhang, Jon Oyvind Kjellman, Takuo Tanemura, Yoshiaki Nakano

    26TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM)   2014年 (   ISSN:1092-8669 )

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    記述言語:英語   出版者・発行元:IEEE  

    We propose and numerically investigate a novel hollow hexagonal InGaAs microdisk laser on a silicon substrate, which can be fabricated by the micro-channel selective-area (MC-SA) MOVPE growth technique. By simply introducing an etched hole with a suitable radius at the center of the hexagonal microdisk, quasi-whispering-gallery modes emerge and the cavity Q factor improves drastically from 371 to 3574 with a disk size of less than 20 mu m(2). Having full compatibility with the MC-SA MOVPE method, the presented scheme could be an attractive approach toward the monolithic integration of InGaAs disk lasers on silicon platforms.

    DOI: 10.1109/ICIPRM.2014.6880547

  • Narrow line-width photoluminescence spectrum of GaAs nanodisks fabricated using bio-template ultimate top-down processes

    Yosuke Tamura, Akio Higo, Takayuki Kiba, Cedric Thomas, Wang Yunpeng, Hassanet Sodabanlu, Ichiro Yamashita, Masakazu Sugiyama, Yoshiaki Nakano, Akihiro Murayama, Seiji Samukawa

    2014 IEEE 14TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO)   221 - 224   2014年

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    記述言語:英語   出版者・発行元:IEEE  

    Quantum dot optoelectronic devices are very attractive for their low power consumption, temperature stability, and high-speed modulation. We developed an ultimate defect-free, top-down fabrication process for sub-20-nm diameter GaAs quantum nanodisks (NDs) by using a combination of a bio-template and neutral beam etching. Metal-organic vapor phase epitaxy was used to make stacked layers of GaAs/AlGaAs multiple quantum wells for etching and for regrowth of AlGaAs barrier layer after nanopillar fabrication (embedding GaAs NDs). To fabricate high-uniformity GaAs NDs array, surface condition such as oxide layer is very critical to etch GaAs/AlGaAs stacked layers with neutral beam. To make high quality GaAs NDs a small amount of oxide is better. To decrease the surface oxide ratio, we investigated oxygen processes such as oxygen radical treatment or low-temperature oxygen annealing under vacuum to remove ferritin protein shell. As a result, we could mitigate the surface oxide formation and achieved a high-uniformity and high-density GaAs NDs array. Very narrow line-width photo emission full-width at half maximum of less than 30 meV) was observed from NDs at 7 K confirming the high quality of GaAs NDs.

    DOI: 10.1109/NANO.2014.6967977

  • Proposal and Experimental Demonstration of Monolithic InP/InGaAsP Polarization Modulator

    Yuto Kawabata, Masaru Zaitsu, Takuo Tanemura, Yoshiaki Nakano

    2014 EUROPEAN CONFERENCE ON OPTICAL COMMUNICATION (ECOC)   2014年

     詳細

    記述言語:英語   出版者・発行元:IEEE  

    We propose a novel monolithically integrated InP/InGaAsP polarization modulator, consisting half-ridge polarization converters and electro-optic phase modulators. A proof-of-concept device is fabricated and demonstrated to show conversion to an arbitrary state on the Poincare sphere.

    DOI: 10.1109/ECOC.2014.6963940

  • Void formation during GaN MOVPE on Si (111) employing low temperature AlN interlayers

    Cai Liu, Hongbo Wang, Hassanet Sodabanlu, Masakazu Sugiyama, Yoshiaki Nakano

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 2   11 ( 2 )   293 - 296   2014年 (   ISSN:1862-6351 )

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    記述言語:英語   出版者・発行元:WILEY-V C H VERLAG GMBH  

    During the growth of GaN on Si (111), voids were found in GaN layers in between AlN interlayers. Void formation mechanism is the decomposition of GaN in H-2. Void formation process is carefully studied. It is clarified that voids are formed during the period between the growth of two neighbouring GaN layers, after the growth of AlN interlayer between them. There are some openings in AlN interlayers and they act as the pass for H-2 to react with GaN. NH3 partial pressure, temperature, etching time, and conditions such as thickness of AlN interlayers can be utilized to tune the volume, size and shape of the voids. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

    DOI: 10.1002/pssc.201300309

  • Surface activated Ge/GaAs wafer bonding for multi-junction solar cells

    Genki Kono, Masahisa Fujino, Daiji Yamashita, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano, Tadatomo Suga

    2014 INTERNATIONAL CONFERENCE ON ELECTRONICS PACKAGING (ICEP)   720 - 723   2014年

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    記述言語:英語   出版者・発行元:IEEE  

    In this research, Ge/GaAs wafers were successfully bonded at room temperature by means of surface activated bonding (SAB) using fast atom beam (FAB) in high vacuum condition. Scanning acoustic microscope (SAM) observation shows wafers were bonded over almost the entire area. After 250 degrees C annealing in N2 atomosphere, interfacial voids were reduced. Bonding strength of the interface archived 4.87MPa and most of fractured surface was GaAs. Transmission electron microscope (TEM) observation of bonding interface shows that Ge/GaAs were bonded at atomic level and amorphous layer with thickness of about 5nm was formed. Current-voltage (I-V) characteristic of directly bonded p-Ge/p-GaAs shows diode-like properties. The electrical resistance of bonded interface achieved 0.54 Omega cm(2) at 0V and 0.16 Omega cm2 at 0.1V.

    DOI: 10.1109/ICEP.2014.6826774

  • Surface stabilities of n-type GaN dependent on electrolyte under photoelectrochemical reactions

    Kayo Koike, Akihiro Nakamura, Masakazu Sugiyama, Yoshiaki Nakano, Katsushi Fujii

    Materials Research Society Symposium Proceedings   1647   2014年 (   ISSN:0272-9172 )

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    記述言語:英語   出版者・発行元:Materials Research Society  

    The n-type GaN has stability problem of the surface anodic corrosion during the photoelectrochemical reaction for H2 generation. The photoelectrochemical surface stabilities of n-type GaN dependent on the electrolytes were investigated. The flatband potential in HCl obtained from Mott-Schottky plot shifted 0.1 V to positive direction compared with that in H2SO4. The variation of saturated photocurrent of 1 to 3 cycles in H2SO4 was much larger than that of HCl, NaOH and KOH. The surface morphologies also changed by the electrolytes. These results show the absorbed materials on the GaN electrode surface during the photoelectrochemical reactions were changed by the electrolyte and affected the surface reactions. Copyright © Materials Research Society 2014.

    DOI: 10.1557/opl.2014.172

  • Surface stability of n-type GaN depending on carrier concentration and electrolytes under photoelectrochemical reactions

    Kayo Koike, Akihiro Nakamura, Masakazu Sugiyama, Yoshiaki Nakano, Katsushi Fujii

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4   11 ( 3-4 )   821 - 823   2014年 (   ISSN:1862-6351 )

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    記述言語:英語   出版者・発行元:WILEY-V C H VERLAG GMBH  

    Photoelectrochemical properties and stabilities of n-type GaN dependent on the carrier concentration and electrolytes were investigated. Flatband potential obtained from Mott-Schottky plot shifted to positive direction with lowering the carrier concentration. The GaN surface morphologies after the reaction with H2SO4 were changed to rough. In contrast, the surface morphologies were not much changed and were mirror like for the case of NaOH electrolytes. These results show the GaN surface absorbed materials during the photoelectrochemical reactions were changed by the electrolyte and carrier concentration. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

    DOI: 10.1002/pssc.201300466

  • 多接合太陽電池の高効率化にむけた歪補償量子井戸超格子 (特集 ナノ・ヘテロ構造を利用した太陽電池)

    杉山 正和, 藤井 宏昌, トープラサートポン カシディット, ソダーバンル ハッサネット, 王 云鵬, 渡辺 健太郎, 中野 義昭

    日本結晶成長学会誌 Journal of the Japanese Association for Crystal Growth   41 ( 2 )   87 - 95   2014年 (   ISSN:2188-7268 )

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    記述言語:日本語   出版者・発行元:日本結晶成長学会  

    This paper will summarize our approach toward efficiency enhancement of multijunction cells using InGaAs/GaAsP quantum wells with both the quasi-lattice-match relationship with GaAs host and the extended absorption edge to a longer wavelength than the value of GaAs. The optimized structure for efficient collection of photo-generated carriers in the InGaAs wells employed both thin (&le;3 nm) barriers for tunneling-assisted carrier transport and a stepwise potential to assist thermionic carrier escape. In spite of its small thickness, 100 stacks of InGaAs wells in GaAs pin junction evidenced up to 80% internal quantum efficiency in the sub-bandgap region of GaAs. The growth of such a structure necessitates elaborate control of strain accumulation, for which in situ monitoring of wafer curvature proved to be quite effective. The heterointerfaces between compressive InGaAs and tensile GaAsP imposes difficulty in keeping surface morphology up to >100 stacks. The interlayer should be inserted at such interfaces to mitigate straininduced crystal imperfection, as evidenced by in situ surface reflectance monitoring.

  • カプセル型キャビティを用いた微小金属半導体レーザーの設計(半導体レーザ関連技術,及び一般)

    張 柏富, 沖本 拓也, 種村 拓夫, 中野 義昭

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   113 ( 352 )   1 - 6   2013年12月

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    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    微小金属InP/InGaAsレーザーの実現に向けて,新規のカプセル型キャビティ構造を提案し,Q値,閉じ込め係数,発振閾電流値などを計算したので報告する。従来の直方体型キャビティの両端に曲面金属ミラー構造を導入することで,共振モードの光電界分布をキャビティの中央に閉じ込めることができ,金属界面における光損失が大幅に削減される.一例として,1.1μm×0.84μm×1.4μmの構造に本手法を取り入れることで,従来の直方体型と比較して,Q値が197から297に増加し,発振閾値が291μAから60μAまで小さくなることを示す.さらに,閾値電流を最小にする最適なキャビティ幅が存在することを示す.

  • Effect of GaP and GaP/InGaP insertion layers on the structural and optical properties of InP quantum dots grown by metal-organic vapor phase epitaxy

    S. S. Han, A. Higo, W. Yunpeng, M. Deura, M. Sugiyama, Y. Nakano, S. Panyakeow, S. Ratanathammaphan

    MICROELECTRONIC ENGINEERING   112   143 - 148   2013年12月 (   ISSN:0167-9317   eISSN:1873-5568 )

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    記述言語:英語   出版者・発行元:ELSEVIER SCIENCE BV  

    A comparison of ultra-thin insertion layers (Gap and GaP/In0.4Ga0.6P) on InP self-assembled quantum dots (SAQDs) grown on GaAs (001) substrates using metal-organic vapor phase epitaxy (MOVPE) was studied. Atomic force microscopy (AFM) and photoluminescence (PL) were employed to characterize the optical and structural properties of the grown InP QDs. It is found that the QD dimension, size distribution and density strongly depend on the insertion layer thickness which led to tune the emission wavelength and narrowing of full width at half maximum (FWHM) at low temperature (20-250 K) and at room-temperature PL measurements. This result is attributed to the improved QD size and quantum confinement effect arising from the insertion of the GaP and GaP/In0.4Ga0.6P layers. (C) 2013 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.mee.2013.01.026

  • Photoreflectance法を用いたInGaAs/GaAsP超格子構造太陽電池におけるミニバンド形成過程の研究

    倉留弘憲, 横山祐貴, 小島慶也, 相原健人, 鈴木秀俊, 福山敦彦, 碇哲雄, TOPRASERTPONG Kasidit, 杉山正和, 中野義昭

    応用物理学会九州支部学術講演会講演予稿集   39   101   2013年11月

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    記述言語:日本語  

  • 3J1-1 量子井戸太陽電池におけるキャリアの非発光再結合損失および輸送特性(超音波物性・光超音波)

    杉本 泰士, 相原 健人, 藤井 宏昌, 杉山 正和, 中野 義昭, 福山 敦彦, 碇 哲雄

    超音波エレクトロニクスの基礎と応用に関するシンポジウム講演論文集   34   405 - 406   2013年11月 (   ISSN:1348-8236 )

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    記述言語:英語   出版者・発行元:超音波エレクトロニクスの基礎と応用に関するシンポジウム運営委員会  

  • Characteristics of hydrogen generation from water splitting by polymer electrolyte electrochemical cell directly connected with concentrated photovoltaic cell

    Katsushi Fujii, Shinichiro Nakamura, Masakazu Sugiyama, Kentaroh Watanabe, Behgol Bagheri, Yoshiaki Nakano

    INTERNATIONAL JOURNAL OF HYDROGEN ENERGY   38 ( 34 )   14424 - 14432   2013年11月 (   ISSN:0360-3199   eISSN:1879-3487 )

     詳細

    記述言語:英語   出版者・発行元:PERGAMON-ELSEVIER SCIENCE LTD  

    Energy storage is a key technology for establishing a stand-alone renewable energy system. Current energy-storage technologies are, however, not suitable for such an energy system because the technologies are cost ineffective and achieve low energy-conversion efficiency. The most realistic and expected technology is hydrogen generation from water splitting by an electrochemical cell directly connected with photovoltaic cell. In this study, a simple concept is proposed for generating hydrogen from water splitting by using a direct-electrically-connected polymer electrolyte electrochemical cell and a separately-located concentrated photovoltaic cell, named a "concentrated photovoltaic electrochemical cell (CPEC)". The CPEC operates stably and achieves relatively high-energy conversion efficiency from light to hydrogen of over 12%. The conditions are comparison with those of the electrochemical cell connected with a polycrystalline Si solar cell. Copyright (C) 2013, Hydrogen Energy Publications, LLC. Published by Elsevier Ltd. All rights reserved.

    DOI: 10.1016/j.ijhydene.2013.07.010

  • Demonstration of 1×8 silicon photonic switch based on optical phased array

    Chao Chen, Akio Higo, Myung Joon Kwack, Takuo Tanemura, Yoshiaki Nakano

    2013 18th OptoElectronics and Communications Conference Held Jointly with 2013 International Conference on Photonics in Switching, OECC/PS 2013   2013年10月

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    A fully integrated silicon 1×8 switch based on thermo-optic phased array is designed, fabricated, and demonstrated for the first time. Static and dynamic switching characteristics are presented and possibilities for further improvements are discussed. © 2013 IEICE.

  • Efficiency and fabrication tolerance of half-ridge InP/InGaAsP polarization converters

    Masaru Zaitsu, Takuo Tanemura, Yoshiaki Nakano

    2013 18th OptoElectronics and Communications Conference Held Jointly with 2013 International Conference on Photonics in Switching, OECC/PS 2013   2013年10月

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    Integrated InP/InGaAsP polarization converters based on half-ridge structure are studied numerically. We demonstrated that the fabrication tolerance can be extended significantly by optimizing the thickness of the residual InGaAsP layer at the ridge side. © 2013 IEICE.

  • The 18th OptoElectronics and communications conference (OECC2013)

    Masafumi Koga, Yoshiaki Nakano

    2013 18th OptoElectronics and Communications Conference Held Jointly with 2013 International Conference on Photonics in Switching, OECC/PS 2013   2013年10月

  • Compensation doping in InGaAs / GaAsP multiple quantum well solar cells for efficient carrier transport and improved cell performance

    Hiromasa Fujii, Yunpeng Wang, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano

    Journal of Applied Physics   114 ( 10 )   2013年9月 (   ISSN:0021-8979 )

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    記述言語:英語  

    A major challenge for multiple quantum well (MQW) solar cells is to extract sufficient photo-excited carriers to an external circuit through the MQW region under forward bias. The present study reports the effectiveness of compensation doping in the i-region, which includes MQWs, for more efficient transport of both electrons and holes. Unintentional p-type background doping occurs in GaAs by inevitable carbon incorporation during metal-organic vapor phase epitaxy, causing undesirable bending of the band lineup in the i-region of p-on-n devices. By cancelling this out by sulfur compensation doping to obtain a uniform electric field distribution, we achieved much a high carrier collection efficiency (CCE) &gt
    90% at the operating bias voltage regardless of the excitation wavelength, compared to &lt
    50% without compensation doping. Consequently, cell performance was greatly improved, in particular showing an enhancement of the fill factor from 0.54 to 0.77, and degradation-free quantum efficiency within the GaAs absorption wavelength range. The photoluminescence (PL) intensity from the MQW increased as the CCE decreased at a large forward bias, and radiative recombination loss was significantly suppressed by compensation doping. Furthermore, time-resolved PL measurements indicated a much higher speed of carrier escape from the wells, showing a quicker PL decay time of 7 ns at 0.6 V, compared to 18-51 ns without compensation doping. © 2013 AIP Publishing LLC.

    DOI: 10.1063/1.4820396

  • B-10-54 Numerical and Experimental Study on Reflective Semiconductor Optical Amplifier for Self-Seeded WDM-PON Application

    Zeng Yuxiao, Yamauchi Syunya, Tanemura Takuo, Nakano Yoshiaki

    電子情報通信学会ソサイエティ大会講演論文集   2013 ( 2 )   268 - 268   2013年9月

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    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

  • C-4-12 半導体レ0ザとのモノリシック集積に適したInPハーフリッジ型偏波変換器(C-4.レーザ・量子エレクトロニクス,一般セッション)

    財津 優, 種村 拓夫, 中野 義昭

    電子情報通信学会ソサイエティ大会講演論文集   2013 ( 1 )   220 - 220   2013年9月

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • 「パワー半導体光源とその応用技術」:—特集号によせて—

    中野 義昭

    電気学会論文誌. C   133 ( 8 )   1436 - 1436   2013年9月 (   ISSN:0385-4221 )

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    記述言語:日本語   出版者・発行元:The Institute of Electrical Engineers of Japan  

    本記事に「抄録」はありません。

    DOI: 10.1541/ieejeiss.133.1436

  • 半導体レーザとのモノリシック集積に適したInPハーフリッジ型偏波変換器

    財津優, 種村拓夫, 中野義昭

    電子情報通信学会大会講演論文集(CD-ROM)   2013   ROMBUNNO.C-4-12   2013年9月 (   ISSN:1349-144X )

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    記述言語:日本語  

  • GaN/AlNを用いたサブバンド間遷移光吸収のシミュレーション

    伊藤成顕, HASSANET Sodabanlu, 杉山正和, 中野義昭

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   74th   ROMBUNNO.17P-P7-13   2013年8月

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    記述言語:日本語  

  • バイオテンプレート極限加工によるGaAs量子ナノディスクの作製とフォトルミネッセンス特性

    肥後昭男, 田村洋典, 木場隆之, THOMAS C, W. Yunpeng, 山下一郎, 杉山正和, 中野義昭, 村山明宏, 寒川誠二

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   74th   ROMBUNNO.18A-D6-9   2013年8月

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    記述言語:日本語  

  • 分極制御窒化物光電極におけるAlN層厚みの影響

    中村亮裕, 藤井克司, 杉山正和, 中野義昭

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   74th   ROMBUNNO.16P-B5-1   2013年8月

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    記述言語:日本語  

  • 水電気分解酸素発生電極用マンガン化合物電極触媒の合成

    瀧勇也, TAN Zhenquan, 大原智, 伊藤隆, 中野義昭, 藤井克司, 杉山正和

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   74th   ROMBUNNO.17P-C14-5   2013年8月

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    記述言語:日本語  

  • 「パワー半導体光源とその応用技術」 : 特集号によせて

    中野 義昭

    電気学会論文誌. C, 電子・情報・システム部門誌 = The transactions of the Institute of Electrical Engineers of Japan. C, A publication of Electronics, Information and Systems Society   133 ( 8 )   1436 - 1436   2013年8月 (   ISSN:0385-4221 )

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    記述言語:日本語   出版者・発行元:The Institute of Electrical Engineers of Japan  

    本記事に「抄録」はありません。

    DOI: 10.1541/ieejeiss.133.1436

  • Comparison of Semiconductor-Electrolyte and Semiconductor-Metal Schottky Junctions Using AlGaN/GaN Photoelectrochemical Electrode

    Akihiro Nakamura, Masakazu Sugiyama, Katsushi Fujii, Yoshiaki Nakano

    JAPANESE JOURNAL OF APPLIED PHYSICS   52 ( 8 )   2013年8月 (   ISSN:0021-4922   eISSN:1347-4065 )

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    記述言語:英語   出版者・発行元:IOP PUBLISHING LTD  

    A semiconductor photoelectrochemical electrode that contains a heterostructure at the surface vicinity is attractive as a corrosion-tolerant electrode. In order to clarify its basic characteristics, the differences in Schottky junctions were evaluated using the semiconductor capacitance dependence on voltage. The Mott-Schottky relationship of a thin AlGaN layer on GaN was different from that of GaN bulk. The Schottky junctions were formed not only by using an electrolyte contact, but also by using a metal electrode to evaluate the effects of the semiconductor-electrolyte interface. Although diffusions of ions and solvents occur in the electrolyte, the Mott-Schottky plot measured for the electrolyte system showed a similar voltage dependence slope to that measured with a metal contact. This indicates that an electrolyte has a limited effect on the depletion behavior of the semiconductor heterojunction electrode. (c) 2013 The Japan Society of Applied Physics

    DOI: 10.7567/JJAP.52.08JN20

  • 低温接合技術と光デバイス応用最新動向 低温接合技術と光デバイス応用

    肥後昭男, LI Linghan, 杉山正和, 中野義昭

    Optronics   32 ( 379 )   83 - 87   2013年7月 (   ISSN:0286-9659 )

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    記述言語:日本語   出版者・発行元:オプトロニクス社  

  • InP光集積回路による高速光スイッチ技術

    種村 拓夫, 中野 義昭

    光学   42 ( 5 )   249 - 255   2013年5月 (   ISSN:0389-6625 )

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    記述言語:日本語   出版者・発行元:応用物理学会分科会日本光学会  

  • InP光集積回路による高速光スイッチ技術

    種村拓夫, 中野義昭

    光学   42 ( 5 )   249 - 255   2013年5月 (   ISSN:0389-6625 )

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    記述言語:日本語   出版者・発行元:応用物理学会分科会日本光学会  

  • Growth of strain-compensated InGaN/AlN multiple quantum wells on GaN by MOVPE

    Kazehiko Anazawa, Sodabanlu Hassanet, Katsushi Fujii, Yoshiaki Nakano, Masakazu Sugiyama

    Journal of Crystal Growth   370   82 - 86   2013年5月 (   ISSN:0022-0248 )

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    記述言語:英語   出版者・発行元:Elsevier B.V.  

    Strain-compensated InGaN/AlN MQWs were grown on a c-plane GaN/sapphire template by MOVPE at 780°C. After optimization of its growth conditions, several samples of InGaN/AlN MQWs with varied well and barrier thicknesses were prepared in order to find the best balance of each layer thickness. Strains inside the MQWs were evaluated by reciprocal space mapping (RSM) measurements, and the results were quite consistent with the calculation of strain estimation. Characterization by HRXRD and photoluminescence measurements revealed an impact of strain accumulation on the quality of MQWs, and the best results were obtained in the most strain-compensated InGaN/AlN MQWs. Compared with InGaN/GaN MQWs with the same thicknesses of wells and barriers, InGaN/AlN MQWs proved to have promising characteristics for several optical devices. © 2013 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jcrysgro.2012.08.050

  • Optimized interfacial management for InGaAs/GaAsP strain-compensated superlattice structure

    ShaoJun Ma, Yunpeng Wang, Hassanet Sodabanlu, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano

    JOURNAL OF CRYSTAL GROWTH   370   157 - 162   2013年5月 (   ISSN:0022-0248   eISSN:1873-5002 )

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    記述言語:英語   出版者・発行元:ELSEVIER SCIENCE BV  

    In this paper, the interfacial management for InGaAs/GaAsP strain-compensated superlattice (SL) structures with thin wells and barriers and a large number of hetero-interfaces has been investigated. By means of X-ray diffraction (XRD) measurement and high-accuracy in-situ curvature measurement, we found that the hetero-interfaces with substantial lattice mismatch tend to generate interfacial defects, which can be mitigated by the insertion of ultrathin GaAs interlayers. However, an inadequate gas-switching sequence induces unintended atomic content near the hetero-interfaces and in the GaAs insertion layers, which influences the average strain of the structure. It was found effective to extend the stabilization time for the arsenic and phosphorus mixture before GaAsP barrier growth to 3 s and to insert an 1 s hydrogen purge after InGaAs well growth. Static photoluminescence (PL) and time-resolved photoluminescence (TRPL) results were also used to evaluate the crystal quality of grown structures. (C) 2012 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jcrysgro.2012.09.007

  • High-Aspect Ratio Structures for Efficient Light Absorption and Carrier Transport in InGaAs/GaAsP Multiple Quantum-Well Solar Cells

    Hiromasa Fujii, Yunpeng Wang, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano

    IEEE JOURNAL OF PHOTOVOLTAICS   3 ( 2 )   859 - 867   2013年4月 (   ISSN:2156-3381   eISSN:2156-3403 )

     詳細

    記述言語:英語   出版者・発行元:IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC  

    The high aspect ratio (HAR) quantum well was proposed as a general design principle to overcome the tradeoff problem between light absorption and carrier collection in multiple quantum-well (MQW) solar cells. An HAR-MQW structure consists of thin wells and barriers, and its fundamental strategies are 1) thinner wells to enhance the light absorption for 1HH transition and make it possible to absorb the same amount of light with a thinner MQW region; 2) thinner barriers to allow the photogenerated carriers to be extracted by means of tunneling transport; and 3) deeper wells to obtain the same effective bandgap as thicker wells because of the stronger confinement. The enhanced absorption coefficient for HAR-MQW was proved by the measurement of both photoabsorption and the quantum efficiency at a sufficiently large reverse bias. Stronger photon absorption via 1HH transition was achieved with a smaller total thickness of the wells area. In the HAR-MQW cell, although the transport of the heavy holes was found to still be dominated by thermionic processes due to its large effective mass, tunneling of the electrons was clearly observed, and the extraction efficiency of photoexcited electrons remained much higher than that of a normal MQW cell at forward biases.

    DOI: 10.1109/JPHOTOV.2013.2240561

  • InGaAsP Grating Couplers Fabricated Using Complementary-Metal-Oxide-Semiconductor-Compatible III-V-on-Insulator on Si

    Mitsuru Takenaka, Masafumi Yokoyama, Masakazu Sugiyama, Yoshiaki Nakano, Shinichi Takagi

    APPLIED PHYSICS EXPRESS   6 ( 4 )   2013年4月 (   ISSN:1882-0778 )

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    記述言語:英語   出版者・発行元:JAPAN SOC APPLIED PHYSICS  

    We have demonstrated InGaAsP grating couplers using the III-V-on-insulator (III-V-OI) on a Si wafer. The direct bonding of an InGaAsP/InP wafer and a thermally oxidized SiO2/Si wafer allows us to fabricate the grating couplers through the standard complementary metal-oxide-semiconductor (CMOS)-compatible process. The grating coupler, which was designed by the time-domain beam-propagation method (TD-BPM), exhibited a coupling efficiency of 38%, the 3 dB bandwidth of 37 nm, and the 1 dB lateral alignment tolerance of +/-2.5 mu m for the c-band wavelength, making it suitable for the III-V CMOS photonics platform. (C) 2013 The Japan Society of Applied Physics

    DOI: 10.7567/APEX.6.042501

  • GaAsナノディスクのAlGaAs/GaAs MOVPE埋め込み再成長

    肥後昭男, 田村洋典, FAUZI M. E, THOMAS C, 五十嵐誠, 胡衛国, 胡衛国, 木場隆之, 村山明宏, WANG Y, 杉山正和, 中野義昭, 寒川誠二

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   60th   ROMBUNNO.28P-G20-9   2013年3月

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    記述言語:日本語  

  • InGaAs/GaAsP量子井戸太陽電池における障壁層厚さがキャリア脱出に与える影響

    TOPRASERTPONG Kasidit, 藤井宏昌, 渡辺健太郎, 杉山正和, 中野義昭

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   60th   ROMBUNNO.29A-G4-5   2013年3月

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    記述言語:日本語  

  • InGaAs/GaAsP超格子挿入GaAs単接合セルの集光下特性

    渡辺健太郎, SODABANLU H, WANG Y, 杉山正和, 中野義昭

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   60th   ROMBUNNO.29A-G4-11   2013年3月

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    記述言語:日本語  

  • バイオテンプレート極限加工による3次元アレイGaAsナノディスクの作製

    FAUZI Mohd Erman, 田村洋典, 肥後昭男, WANG Y, 杉山正和, 中野義昭, 寒川誠二

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   60th   ROMBUNNO.30A-G20-9   2013年3月

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    記述言語:日本語  

  • モノリシック集積直列接続GaAs太陽電池の集光特性評価

    瀬能未奈都, 渡辺健太郎, 杉山正和, 中野義昭

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   60th   ROMBUNNO.28P-G4-14   2013年3月

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    記述言語:日本語  

  • 水分解GaN系光電気化学電極における新規構造の提案

    中村亮裕, 藤井克司, 杉山正和, 中野義昭

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   60th   ROMBUNNO.30A-G21-1   2013年3月

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    記述言語:日本語  

  • 薄型光閉じ込め量子井戸太陽電池の試作

    井上智之, 渡辺健太郎, 杉山正和, 中野義昭

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   60th   ROMBUNNO.29A-G4-10   2013年3月

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    記述言語:日本語  

  • 集光型太陽電池モジュール出力の試作と許容入射角の測定

    渡邉冬馬, 渡辺健太郎, 杉山正和, 中野義昭

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   60th   ROMBUNNO.28P-G4-15   2013年3月

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    記述言語:日本語  

  • 量子井戸太陽電池におけるキャリア回収効率の妥当性検証

    藤井宏昌, TOPRASERTPONG Kasidit, 渡辺健太郎, 杉山正和, 中野義昭

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   60th   ROMBUNNO.29A-G4-4   2013年3月

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    記述言語:日本語  

  • 集光型太陽電池‐電気化学セルによる水素貯蔵システム

    藤井克司, 中村振一郎, 杉山正和, 渡辺健太郎, BAGHERI Behgol, 中野義昭

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   60th   ROMBUNNO.29P-G22-2   2013年3月

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    記述言語:日本語  

  • 1×8フェーズアレイ型シリコン光スイッチの試作と評価

    CHEN Chao, 肥後昭男, KWACK Myung‐Joon, 種村拓夫, 中野義昭

    電子情報通信学会大会講演論文集   2013   214   2013年3月 (   ISSN:1349-1369 )

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    記述言語:日本語  

  • C-3-54 1×8フェーズアレイ型シリコン光スイッチの試作と評価(C-3.光エレクトロニクス)

    陳 超, 肥後 昭男, 郭 命俊, 種村 拓夫, 中野 義昭

    電子情報通信学会総合大会講演論文集   2013 ( 1 )   2013年3月

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • C-3-53 InPフェーズドアレイ技術による集積光マトリクススイッチの開発(C-3.光エレクトロニクス)

    郭 命俊, 種村 拓夫, 肥後 昭男, 中野 義昭

    電子情報通信学会総合大会講演論文集   2013 ( 1 )   213 - 213   2013年3月

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • InPフェーズドアレイ8×8高速光スイッチマトリクスの実証

    郭 命俊, 種村 拓夫, 肥後 昭男, 中野 義昭

    電気学会研究会資料. EMT, 電磁界理論研究会   2013 ( 1 )   193 - 196   2013年1月

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    記述言語:英語  

  • InPフェーズドアレイ8×8高速光スイッチマトリクスの実証(フォトニック,NW・デバイス,フォトニック結晶,ファイバとその応用,光集積回路,光導波路素子,光スイッチング,導波路解析,一般)

    郭 命俊, 種村 拓夫, 肥後 昭男, 中野 義昭

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   112 ( 400 )   193 - 196   2013年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    WDM光インターコネクションのための完全ノンブロッキング型InPフェーズドアレイ8x8光スイッチの実証に初めて成功した。光スイッチマトリクス内には、導波路間交差点がなく、位相変調器やスターカプラなど合計200個以上の光機能素子を集積した。Cバンド全域(1530-1570)における低波長依存動作。および20dB以上の消光特性などの諸特性を実証した。さらに、ナノ秒オーダの高速なスイッチング、40-Gbps(10-Gbpsx4ch)WDM信号のエラーフリー伝送実験に成功した。

  • InPフェーズドアレイ8×8高速光スイッチマトリクスの実証(フォトニック,NW・デバイス,フォトニック結晶,ファイバとその応用,光集積回路,光導波路素子,光スイッチング,導波路解析,一般)

    郭 命俊, 種村 拓夫, 肥後 昭男, 中野 義昭

    電子情報通信学会技術研究報告. PN, フォトニックネットワーク   112 ( 398 )   193 - 196   2013年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    WDM光インターコネクションのための完全ノンブロッキング型InPフェーズドアレイ8x8光スイッチの実証に初めて成功した。光スイッチマトリクス内には、導波路間交差点がなく、位相変調器やスターカプラなど合計200個以上の光機能素子を集積した。Cバンド全域(1530-1570)における低波長依存動作。および20dB以上の消光特性などの諸特性を実証した。さらに、ナノ秒オーダの高速なスイッチング、40-Gbps(10-Gbpsx4ch)WDM信号のエラーフリー伝送実験に成功した。

  • InPフェーズドアレイ8×8高速光スイッチマトリクスの実証(フォトニック,NW・デバイス,フォトニック結晶,ファイバとその応用,光集積回路,光導波路素子,光スイッチング,導波路解析,一般)

    郭 命俊, 種村 拓夫, 肥後 昭男, 中野 義昭

    電子情報通信学会技術研究報告. EST, エレクトロニクスシミュレーション   112 ( 401 )   193 - 196   2013年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    WDM光インターコネクションのための完全ノンブロッキング型InPフェーズドアレイ8x8光スイッチの実証に初めて成功した。光スイッチマトリクス内には、導波路間交差点がなく、位相変調器やスターカプラなど合計200個以上の光機能素子を集積した。Cバンド全域(1530-1570)における低波長依存動作。および20dB以上の消光特性などの諸特性を実証した。さらに、ナノ秒オーダの高速なスイッチング、40-Gbps(10-Gbpsx4ch)WDM信号のエラーフリー伝送実験に成功した。

  • InPフェーズドアレイ8×8高速光スイッチマトリクスの実証(フォトニック,NW・デバイス,フォトニック結晶,ファイバとその応用,光集積回路,光導波路素子,光スイッチング,導波路解析,一般)

    郭 命俊, 種村 拓夫, 肥後 昭男, 中野 義昭

    電子情報通信学会技術研究報告. OPE, 光エレクトロニクス   112 ( 399 )   193 - 196   2013年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    WDM光インターコネクションのための完全ノンブロッキング型InPフェーズドアレイ8x8光スイッチの実証に初めて成功した。光スイッチマトリクス内には、導波路間交差点がなく、位相変調器やスターカプラなど合計200個以上の光機能素子を集積した。Cバンド全域(1530-1570)における低波長依存動作。および20dB以上の消光特性などの諸特性を実証した。さらに、ナノ秒オーダの高速なスイッチング、40-Gbps(10-Gbpsx4ch)WDM信号のエラーフリー伝送実験に成功した。

  • InPフェーズドアレイ8×8高速光スイッチマトリクスの実証(フォトニック,NW・デバイス,フォトニック結晶,ファイバとその応用,光集積回路,光導波路素子,光スイッチング,導波路解析,一般)

    郭 命俊, 種村 拓夫, 肥後 昭男, 中野 義昭

    電子情報通信学会技術研究報告. MWP, マイクロ波・ミリ波フォトニクス   112 ( 402 )   193 - 196   2013年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    WDM光インターコネクションのための完全ノンブロッキング型InPフェーズドアレイ8x8光スイッチの実証に初めて成功した。光スイッチマトリクス内には、導波路間交差点がなく、位相変調器やスターカプラなど合計200個以上の光機能素子を集積した。Cバンド全域(1530-1570)における低波長依存動作。および20dB以上の消光特性などの諸特性を実証した。さらに、ナノ秒オーダの高速なスイッチング、40-Gbps(10-Gbpsx4ch)WDM信号のエラーフリー伝送実験に成功した。

  • Effect of GaAs Step Layer Thickness in InGaAs/GaAsP Stepped Quantum-Well Solar Cell

    Yu Wen, Yunpeng Wang, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano

    IEEE JOURNAL OF PHOTOVOLTAICS   3 ( 1 )   289 - 294   2013年1月 (   ISSN:2156-3381 )

     詳細

    記述言語:英語   出版者・発行元:IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC  

    A multiple-stepped quantum-well (MSQW) solar cell, in which GaAs step layers are sandwiched between strain-balanced InGaAs wells and GaAsP barriers, has been proposed, and the improved sub-GaAs-bandgap quantum efficiency has been demonstrated. The optical properties of MSQW solar cells with different GaAs step layer thickness are investigated. The recombination losses inside the QWs have been studied by bias-dependent photoluminescence. The recombination losses decrease with increasing the GaAs step layer thickness. Controlling the GaAs step layer thickness is a feasible way to increase short-circuit current without largely degrading open-circuit voltage.

    DOI: 10.1109/JPHOTOV.2012.2212698

  • 100-period, 1.23-eV bandgap InGaAs/GaAsP quantum wells for high-efficiency GaAs solar cells: toward current-matched Ge-based tandem cells

    Hiromasa Fujii, Kasidit Toprasertpong, Yunpeng Wang, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano

    Progress in Photovoltaics: Research and Applications   22 ( 7 )   784 - 795   2013年 (   ISSN:1062-7995 )

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    出版者・発行元:Wiley  

    Major challenges for InGaAs/GaAsP multiple quantum well (MQW) solar cells include both the difficulty in designing suitable structures and, because of the strain-balancing requirement, growing high-quality crystals. The present paper proposes a comprehensive design principle for MQWs that overcomes the trade-off between light absorption and carrier transport that is based, in particular, on a systematical investigation of GaAsP barrier effects on carrier dynamics that occur for various barrier widths and heights. The fundamental strategies related to structure optimization are as follows: (i) acknowledging that InGaAs wells should be thinner and deeper for a given bandgap to achieve both a higher absorption coefficient for 1e-1hh transitions and a lower compressive strain accumulation; (ii) understanding that GaAs interlayers with thicknesses of just a few nanometers effectively extend the absorption edge without additional compressive strain and suppress lattice relaxation during growth; and (iii) understanding that GaAsP barriers should be thinner than 3-nm to facilitate tunneling transport and that their phosphorus content should be minimized while avoiding detrimental lattice relaxation. After structural optimization of 1.23-eV bandgap quantum wells, a cell with 100-period In0.30GaAs(3.5- nm)/GaAs(2.7-nm)/GaAsP0.40(3.0-nm) MQWs exhibited significantly improved performance, showing 16.2% AM 1.5 efficiency without an anti-reflection coating, and a 70% internal quantum efficiency beyond the GaAs band edge. When compared with the GaAs control cell, the optimized cell showed an absolute enhancement in AM 1.5 efficiency, and 1.22 times higher efficiency with 38% current enhancement with an AM 1.5 cut-off using a 665-nm long-pass filter, thus indicating the strong potential of MQW cells in Ge-based 3-J tandem devices. Copyright © 2013 John Wiley &amp; Sons, Ltd.

    DOI: 10.1002/pip.2454

  • Development of a vertical optical coupler using a slanted etching of InP/InGaAsP waveguide

    Sunghan Choi, Akio Higo, Masaru Zaitsu, Myung-Joon Kwack, Masakazu Sugiyama, Hiroshi Toshiyoshi, Yoshiaki Nakano

    IEICE ELECTRONICS EXPRESS   10 ( 6 )   2013年 (   ISSN:1349-2543 )

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    記述言語:英語   出版者・発行元:IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG  

    We demonstrate a simple and efficient optical coupler for vertical coupling between optical fibers and InP-based waveguides using a slant-etched mirror. The angle of the etched mirror can be controlled by using an aluminum jig with a beveled surface inserted under the substrate during RIE (reactive ion etching) of InP/InGaAsP. The off-chip coupler is fabricated simultaneously with a high-mesa waveguide with only one etching process. Coupling loss of 7.3 dB between the tapered single-mode fibers is obtained within the wavelength of 1530-1570 nm.

    DOI: 10.1587/elex.10.20130116

  • A superlattice solar cell for enhanced current output and minimized drop in open-circuit voltage under sunlight concentration

    Yunpeng Wang, Kentaroh Watanabe, Hassanet Sodabanlu, Shaojun Mao, Hiromasa Fujii, Kasidit Toprasertpong, Masakazu Sugiyama, Yoshiaki Nakano

    Conference Record of the IEEE Photovoltaic Specialists Conference   343 - 346   2013年 (   ISSN:0160-8371 )

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    A super-lattice (SL) solar cell has been proposed and approven to be a good candidate to overcome the current mismatch issue in the tadem solar cell. In this report, a SLs cell was tested under optical concentration to explore the potential to be applied as high efficiency single junction solar cell. Compared with a reference GaAs cell, the SLs cell presented a promising enhancement in open-circuit voltage (Voc) with increasing concentration ratio. Taking advantage of the enhanced current density and the minimized drop of Voc, a SLs solar cell could exhibit its best performance under a concentration condition. © 2013 IEEE.

    DOI: 10.1109/PVSC.2013.6744163

  • Carrier collection efficiency in multiple quantum well solar cells

    Hiromasa Fujii, Kasidit Toprasertpong, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano

    Proceedings of SPIE - The International Society for Optical Engineering   8620   2013年 (   ISSN:0277-786X )

     詳細

    The present paper proposes Carrier Collection Efficiency (CCE) as a useful evaluation measure to investigate the carrier transport in quantum well solar cells. CCE is defined as the ratio of the carriers extracted as photocurrent to the total number of the carriers that are photo-excited in the p-n junction area, and can be easily calculated by normalizing the collected current, i.e. the difference between the current under light irradiation and that in the dark, to its saturation value at reverse bias. By measuring CCE as a function of the irradiation wavelength and the applied bias, we can directly and quantitatively evaluate the efficiency of the carrier extraction under operation of the cell, and clarify the underlying problem of the carrier transport. The proposed derivation procedure of CCE is based on the assumption that the saturation of the collected current at reverse bias indicates 100% collection of the photo-excited carriers. We validated this hypothesis by studying the balance between the number of the photo-excited carriers that can be collected at a sufficiently large reverse bias and the number of the photons absorbed in the wells. As a result, the absorption fraction in the MQW region well agreed with the saturated external quantum efficiency as we predicted, indicating CCE defined in this study is an appropriate approximation for the collection efficiency of the carrier generated in the active region of a solar cell device. © 2013 Copyright SPIE.

    DOI: 10.1117/12.2003287

  • Comprehensive validation of Carrier Collection Efficiency in multiple quantum well solar cells: For more effective and direct evaluation of carrier transport dynamics

    Hiromasa Fujii, Kasidit Toprasertpong, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano

    Conference Record of the IEEE Photovoltaic Specialists Conference   277 - 280   2013年 (   ISSN:0160-8371 )

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    Carrier Collection Efficiency (CCE) is proposed as an effective evaluation measure of carrier transport in quantum nanostructure solar cells. CCE can be estimated by normalizing the illumination-induced current enhancement to its saturation value at reverse bias. The derivation procedure of CCE is experimentally validated by examining the bias-dependency of light absorption, and investigating the balance between the absorbed photons and collected carriers at reverse bias. The effect of AM1.5 bias-illumination for CCE characterization was also studied, and found to be much significant for more accurate evaluation of carrier dynamics during actual device operation under sunlight. © 2013 IEEE.

    DOI: 10.1109/PVSC.2013.6744146

  • Evaluation of asymmetric tunneling-assisted structure for InGaAs/GaAsP MQWs solar cell

    ShaoJun Ma, YunPeng Wang, Hassanet Sodabanlu, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano

    2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)   1733 - 1736   2013年 (   ISSN:0160-8371 )

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    記述言語:英語   出版者・発行元:IEEE  

    In the multiple quantum wells (MQWs) system, deep well supplies wide absorption range, but the large band offset would increase the carrier thermionic escape time exponentially. We utilized asymmetric tunneling-assisted structure in InGaAs/GaAsP strain-balanced MQWs to accelerate the carrier collection. The quantitative model of carrier collection time from this novel structure has been built and the collection time has been calculated to be 31% compared with conventional multiple quantum wells. The solar cell with designed tunneling-assisted structure has been fabricated and the external quantum efficiency of it has been compared with conventional MQWs structure. The temperature dependence has also been investigated.

    DOI: 10.1109/PVSC.2013.6744478

  • Effect of GaAs Step Layer Thickness in InGaAs/GaAsP Stepped Quantum-Well Solar Cell

    Yu Wen, Yunpeng Wang, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano

    2012 IEEE 38TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), VOL 2   2013年 (   ISSN:0160-8371 )

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    記述言語:英語   出版者・発行元:IEEE  

    A multiple-stepped quantum-well (MSQW) solar cell, in which GaAs step layers are sandwiched between strain-balanced InGaAs wells and GaAsP barriers, has been proposed, and the improved sub-GaAs-bandgap quantum efficiency has been demonstrated. The optical properties of MSQW solar cells with different GaAs step layer thickness are investigated. The recombination losses inside the QWs have been studied by bias-dependent photoluminescence. The recombination losses decrease with increasing the GaAs step layer thickness. Controlling the GaAs step layer thickness is a feasible way to increase short-circuit current without largely degrading open-circuit voltage.

    DOI: 10.1109/JPHOTOY.2012.2212698

  • Electrical conduction property at InAs/Si(111) interface by selective-area MOVPE

    S. Watanabe, K. Watanabe, A. Higo, M. Sugiyama, Y. Nakano

    2012 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM)   133 - 136   2013年 (   ISSN:1092-8669 )

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    記述言語:英語   出版者・発行元:IEEE  

    Ohmic I-V characteristics at interface between n-type In As and n-type Si have been obtained. Single-domain InAs islands (1 mu m in diameter and 0.5 mu m in height) have been grown epitaxially on SieHl) by selective-area MOVPE. After annealing, linear I-V characteristic was observed with excellent reproducibility and the current through the electrode depends on the number of InAs islands beneath the surface contact metal. The resistivity of InAs was estimated to be 0.0662 Omega.cm. The value corresponds to a carrier concentration of approximately 2 x 10(16) cm(-3). This is reasonable as the intrinsic carrier concentration for an un-doped InAs layer.

    DOI: 10.1109/ICIPRM.2012.6403339

  • InGaAsP optical device integration on SOI platform by Ar/O2 plasma assisted bonding

    A. Higo, L. Li, E. Higurashi, M. Sugiyama, Y. Nakano

    MOEMS AND MINIATURIZED SYSTEMS XII   8616   2013年 (   ISSN:0277-786X )

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    記述言語:英語   出版者・発行元:SPIE-INT SOC OPTICAL ENGINEERING  

    The hetero-integration of InGaAsP/InP on highly doped silicon micro wire structure for Si hybrid laser using the plasma assisted direct bonding has been carried out. For strong adhesion, bonding assisted pattern was used for the silicon wire to the InGaAsP/InP layers. The I-V characteristics of the highly doped silicon micro wire to InP/InGaAsP layers are measured and compared to the Si/InP bulk bonding. The improvement of the hetero-integration with long time annealing was also discussed and realized the direct current injection from Si wire platforms to compound semiconductor active layer for silicon hybrid laser.

    DOI: 10.1117/12.2008337

  • Metalorganic vapor phase epitaxy growth of dual junction solar cell with InGaAs/GaAsP superlattice on Ge

    Hassanet Sodabanlu, Yunpeng Wang, Shaojun Ma, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano

    Conference Record of the IEEE Photovoltaic Specialists Conference   318 - 321   2013年 (   ISSN:0160-8371 )

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    記述言語:英語   出版者・発行元:Institute of Electrical and Electronics Engineers Inc.  

    The impact of growth temperature was investigated on the quality and interface abruptness of InGaAs/GaAsP multiple quantum wells (MQWs) grown on various misoriented substrates. The growth of MQWs on substrates with a larger misoriented angle required a lower temperature. Non-radiative carrier lifetimes in MQWs strongly depended on the quality and abruptness of MQWs. On the basis of this understanding, a dual junction cell consisting of InGaAs/GaAsP superlattice top cell and Ge bottom cell was successfully fabricated. The result encourages the application of InGaAs/GaAsP superlattice for better current balancing and higher efficiency by III-V/Ge multiple junction solar cells. © 2013 IEEE.

    DOI: 10.1109/PVSC.2013.6744157

  • Self-Aligned InP/InGaAsP Polarization Converter for Polarization-Multiplexed Photonic Integrated Circuits

    Masaru Zaitsu, Takuo Tanemura, Akio Higo, Yoshiaki Nakano

    2013 OPTICAL FIBER COMMUNICATION CONFERENCE AND EXPOSITION AND THE NATIONAL FIBER OPTIC ENGINEERS CONFERENCE (OFC/NFOEC)   21   6910 - 6918   2013年

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    記述言語:英語   出版者・発行元:IEEE  

    We experimentally demonstrate a compact and low-loss InP/InGaAsP polarization converter, fabricated by a simple self-aligned process. The mode-conversion of 96% and the excess loss of less than 1.0 dB are obtained over the entire C-band.

    DOI: 10.1364/OE.21.006910

  • Photoluminescence of high-density and sub-20-nm GaAs nanodisks fabricated with a neutral beam etching process and MOVPE regrowth for high performance QDs devices

    Yosuke Tamura, Akio Higo, Takayuki Kiba, Wang Yunpeng, Makoto Igarashi, Cedric Thomas, Weiguo Hu, Mohd Erman Fauzi, Akihiro Murayama, Masakazu Sugiyama, Yoshiaki Nakano, Seiji Samukawa

    Proceedings of the IEEE Conference on Nanotechnology   872 - 875   2013年 (   ISSN:1944-9399   eISSN:1944-9380 )

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    記述言語:英語  

    III-V compound semiconductor quantum dots photonic devices are very attractive because of their low power consumption, temperature stability, and high-speed modulation. We studied and developed a defect-free top-down fabrication process for sub-20-nm GaAs nanodisks (NDs) that uses bio-template and neutral beam etching. We successfully fabricated 100-nm-high nanopillars embedding 4- and 8-nm-thick GaAs quantum well and 30-nm-thick Al 0.3Ga0.7As barrier-stacked structures. The nanopillars were mounted by metalorganic vapor phase epitaxy. We measured visible light photoluminescence at a low temperature originating from the GaAs NDs. Nanodisks fabricated by the top-down process have a great potential for use in high-performance III-V photonic devices. © 2013 IEEE.

    DOI: 10.1109/NANO.2013.6720889

  • Selective area MOVPE of InGaAsP and InGaN systems as process analytical and design tools for OEICs

    Yukihiro Shimogaki, Masakazu Sugiyama, Yoshiaki Nakano

    Conference Proceedings - International Conference on Indium Phosphide and Related Materials   2013年 (   ISSN:1092-8669 )

     詳細

    記述言語:英語  

    Numerical simulation on growth rate non-uniformity of selective area growth (SAG) in metal-organic vapor phase epitaxy (MOVPE) is an effective method to examine the surface reaction kinetics, which is normally hindered by mass transport rate of precursors. SAG is also an effective tool to fabricate opto-electonic integrated circuits (OEICs) to reduce the process steps. In the present talk, the kinetic analyses on InGaAsP and InGaN MOVPE processes using SAG will be presented. © 2013 IEEE.

    DOI: 10.1109/ICIPRM.2013.6562576

  • Self-Aligned InP/InGaAsP Polarization Converter for Polarization-Multiplexed Photonic Integrated Circuits

    Masaru Zaitsu, Takuo Tanemura, Akio Higo, Yoshiaki Nakano

    2013 OPTICAL FIBER COMMUNICATION CONFERENCE AND EXPOSITION AND THE NATIONAL FIBER OPTIC ENGINEERS CONFERENCE (OFC/NFOEC)   2013年

     詳細

    記述言語:英語   出版者・発行元:IEEE  

    We experimentally demonstrate a compact and low-loss InP/InGaAsP polarization converter, fabricated by a simple self-aligned process. The mode-conversion of 96% and the excess loss of less than 1.0 dB are obtained over the entire C-band.

  • Self-Aligned InP/InGaAsP Polarization Converter for Polarization-Multiplexed Photonic Integrated Circuits

    Masaru Zaitsu, Takuo Tanemura, Akio Higo, Yoshiaki Nakano

    2013 OPTICAL FIBER COMMUNICATION CONFERENCE AND EXPOSITION AND THE NATIONAL FIBER OPTIC ENGINEERS CONFERENCE (OFC/NFOEC)   2013年

     詳細

    記述言語:英語   出版者・発行元:IEEE  

    We experimentally demonstrate a compact and low-loss InP/InGaAsP polarization converter, fabricated by a simple self-aligned process. The mode-conversion of 96% and the excess loss of less than 1.0 dB are obtained over the entire C-band.

  • Over 12% light to hydrogen energy conversion efficiency of hydrogen generation from water: New system concept, concentrated photovoltaic electrochemical cell (CPEC)

    Katsushi Fujii, Shinichiro Nakamura, Kentaroh Watanabe, Behgol Bagheri, Masakazu Sugiyama, Yoshiaki Nakano

    Materials Research Society Symposium Proceedings   1491   52 - 57   2013年 (   ISSN:0272-9172 )

     詳細

    記述言語:英語   出版者・発行元:Materials Research Society  

    Energy storage is a key technology for establishing a stand-alone renewable energy system. Current energy-storage technologies are, however, not suitable for such an energy system. They are cost ineffective and/or are with low energy-conversion efficiency. Hydrogen generation and storage from water by sunlight is one of these technologies. In this study, a simple concept of hydrogen generation from water by using sunlight, "concentrated photovoltaic electrochemical cell (CPEC)" is proposed. It is experimentally shown that the CPEC operates stably and achieves conversion efficiency from light to hydrogen energy of over 12%.© 2013 Materials Research Society.

    DOI: 10.1557/opl.2012.1739

  • Sulfur cleaning for (100) (111)A and (111)B InGaAs surfaces with in content of 0.53 and 0.70 and their Al2O3/InGaAs MOS interface properties

    Masafumi Yokoyama, Noriyuki Taoka, Rena Suzuki, Osamu Ichikawa, Hisashi Yamada, Noboru Fukuhara, Masahiko Hata, Masakazu Sugiyama, Yoshiaki Nakano, Mitsuru Takenaka, Shinichi Takagi

    2012 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM)   167 - 170   2013年 (   ISSN:1092-8669 )

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    記述言語:英語   出版者・発行元:IEEE  

    We have studied the impact of sulfur cleaning for (100), (111)A, (111)B InGaAs MOS interfaces using an (NH4)(2)S-x solution. We found that the sulfur cleaning can effectively remove native oxides from InGaAs sufaces and passivate the InGaAs surfaces by sulfur atoms. Combining with trivalent oxide passivation using Al2O3, the Al2O3/InGaAs MOS interfaces with sulfur cleaning can realize good interface properties with small frequency dispersion of the capacitance versus voltage (C - V) curves in accumulation region with independent of In content and the surface orientations.

    DOI: 10.1109/ICIPRM.2012.6403348

  • Thickness optimization of GaN layers by in-situ observation of GaN MOVPE on Si (111)

    Cai Liu, Hassanet Sodabanlu, Masakazu Sugiyama, Yoshiaki Nakano

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 11   10 ( 11 )   1541 - 1544   2013年 (   ISSN:1862-6351 )

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    記述言語:英語   出版者・発行元:WILEY-V C H VERLAG GMBH  

    For MOVPE grown GaN on Si (111) employing low temperature AlN interlayers, in terms of compressive stress introduction to avoid cracking, factors determining the proper thickness of GaN layers were investigated, with the help of in-situ observation of multi-wavelength reflectance patterns and curvature transition. For the 1st GaN layer, the stress behavior of it depends on the growth conditions of AlN buffer layer. For the case on an improper AlN buffer layer, GaN takes tensile stress easily and thus its thickness should be limited to reduce the amount of tensile stress. On the contrary, on the optimized AlN buffer layer, the GaN on it was compressively strained and its thickness can be large to introduce more compressive stress. For GaN layers in between AlN interlayers, the thickness should be limited to be less than the critical thickness in which the layer starts to relax. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

    DOI: 10.1002/pssc.201300266

  • Optimization of Compact Photonic Crystal Cavity Using the Gentle Confinement Method

    Jon Oyvind Kjellman, Takuo Tanemura, Yoshiaki Nakano

    2013 IEEE PHOTONICS SOCIETY SUMMER TOPICAL MEETING SERIES   44 - 45   2013年

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    記述言語:英語   出版者・発行元:IEEE  

    We demonstrate that the gentle confinement method is effective for optimizing area-limited photonic crystal cavities. We also show the importance of the boundary and that optimal boundary parameters improves the Q-factor significantly.

    DOI: 10.1109/PHOSST.2013.6614491

  • Orange/yellow InGaN/AlN nanodisk light emitting diodes

    Manish Mathew, Hassanet Sodabanalu, Masakazu Sugiyama, Yoshiaki Nakano

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 11   10 ( 11 )   1525 - 1528   2013年 (   ISSN:1862-6351 )

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    記述言語:英語   出版者・発行元:WILEY-V C H VERLAG GMBH  

    Indium gallium nitride (InGaN)/aluminium nitride (AlN) self-assembled nanodisk light emitting diode (LED) structures were grown on sapphire substrate using metalorganic vapor phase epitaxy (MOVPE). Structural analysis shows that the initial AlN layer plays a crucial role in the formation of nanodisk structure. Nanodisks were formed due to cracks introduced in the first AlN layer on n-GaN template. The succeeding InGaN/AlN layers introduced branching of the nanodisks due to cracks from the initial AlN layer. The structural proper-ties of nanodisk were confirmed from atomic force microscopy (AFM) and high-angle annular dark-field (HAADF) images. Observation of electroluminescence (EL) showed that, at lower injection current orange (605 nm) color light was emitted and that when the injection current increased the wavelength shifted from orange to yellow (586 nm). This large EL blue shift observed in the nanodisk LED was due weakening of the quantum confined stark effect (QCSE) at high injection current. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

    DOI: 10.1002/pssc.201300258

  • 未開拓THz帯レーザ開発に向けたサブバンド間遷移に関する研究

    伊藤成顕, SODABANLU Hassanet, 杉山正和, 中野義昭

    日本赤外線学会研究発表会資料   23rd   25 - 26   2013年

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    記述言語:日本語  

  • InGaAs/GaAsP歪補償量子井戸太陽電池中の光励起キャリア発光再結合過程の評価

    小島慶也, 中野陽介, 相原健人, 福山敦彦, 碇哲雄, 藤井宏昌, 杉山正和, 中野義昭

    応用物理学会九州支部学術講演会講演予稿集   38   129   2012年12月

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    記述言語:日本語  

  • Integrated optical buffer using InP 1×8 switch and silica-based delay line circuit

    M. J. Kwack, T. Oyama, Y. Hashizume, S. Mino, M. Zaitsu, T. Tanemura, Y. Nakano

    Optics InfoBase Conference Papers   2012年12月 (     eISSN:2162-2701 )

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    We demonstrate a compact optical buffer module, comprising an InP 1×8 phased-array switch and a silica-based delay line circuit. Tunable and uniform buffering of up to 21 ns is obtained with a 3-ns temporal resolution. © 2012 Optical Society of America.

  • 圧電素子光熱分光法を用いたInGaAs/GaAsP超格子構造太陽電池のミニバンド形成過程の研究

    横山祐貴, 小島慶也, 相原健人, 福山敦彦, 碇哲雄, WANG Y, 杉山正和, 中野義昭

    応用物理学会九州支部学術講演会講演予稿集   38   52   2012年12月

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    記述言語:日本語  

  • Monolithic InP strictly non-blocking 8×8 switch for high-speed WDM optical interconnection

    Myung Joon Kwack, Takuo Tanemura, Akio Higo, Yoshiaki Nakano

    Optics Express   20 ( 27 )   28734 - 28741   2012年12月 (   ISSN:1094-4087 )

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    記述言語:英語  

    A strictly non-blocking 8 × 8 switch for high-speed WDM optical interconnection is realized on InP by using the phased-array scheme for the first time. The matrix switch architecture consists of over 200 functional devices such as star couplers, phase-shifters and so on without any waveguide cross-section. We demonstrate ultra-broad optical bandwidth covering the entire C-band through several Input/Output ports combination with extinction ratio performance of more than 20dB. Also, nanoseconds reconfiguration time was successfully achieved by dynamic switching experiment. Error-free transmission was verified for 40-Gbps (10-Gbps × 4ch) WDM signal. © 2012 Optical Society of America.

    DOI: 10.1364/OE.20.028734

  • Monolithic InP strictly non-blocking 8×8 switch for high-speed WDM optical interconnection

    Myung Joon Kwack, Takuo Tanemura, Akio Higo, Yoshiaki Nakano

    European Conference and Exhibition on Optical Communication, ECEOC 2012   20 ( 27 )   28734 - 28741   2012年12月 (   ISSN:1094-4087 )

     詳細

    記述言語:英語  

    A strictly non-blocking 8×8 switch is realized on InP by using the phased-array scheme for the first time. We demonstrate nanoseconds reconfiguration time, ultra-broad optical bandwidth covering the entire C-band, and error-free transmission of 40-Gbps (10-Gbps 4ch) WDM signal. © 2012 OSA.

    DOI: 10.1364/OE.20.028734

  • InP斜めエッチングを用いた垂直出射型光カプラの開発

    CHOI Sunghan, 肥後昭男, 財津優, 年吉洋, 中野義昭

    センサ・マイクロマシンと応用システムシンポジウム(CD-ROM)   29th   ROMBUNNO.3F2-5   2012年10月

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    記述言語:日本語  

  • 微小領域選択成長MOVPEによるSi基板上InGaAsディスクのフォトルミネッセンス測定

    藤本悠, 肥後昭男, KJELLMAN J.O, 渡邉翔大, 杉山正和, 中野義昭

    センサ・マイクロマシンと応用システムシンポジウム(CD-ROM)   29th   ROMBUNNO.3F3-1   2012年10月

     詳細

    記述言語:日本語  

  • 高効率太陽電池とその開発動向

    中野義昭, 杉山正和, 渡辺健太郎

    光技術コンタクト   50 ( 10 )   4 - 13   2012年10月 (   ISSN:0913-7289 )

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    記述言語:日本語   出版者・発行元:光学工業技術協会  

  • モノリシック偏波多重送信回路のためのInP偏波変換器の試作と評価(超高速伝送・変復調・分散補償技術,超高速光信号処理技術,広帯域光増幅・WDM技術,受光デバイス,高光出力伝送技術,一般(ECOC報告))

    財津 優, 肥後 昭男, 種村 拓夫, 中野 義昭

    電子情報通信学会技術研究報告. OPE, 光エレクトロニクス   112 ( 259 )   155 - 160   2012年10月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    InP系モノリシック光集積回路を用いた偏波多重伝送回路の実現をめざした導波路型偏波変換器の試作・評価結果について報告する.本素子は斜め蒸着法を用いたセルフアラインプロセスで作製される非対称構造を有しており,一般的なリッジ導波路および半導体レーザと容易に集積が可能な偏波変換素子となっている.試作した素子について特性評価を行い,1510〜1575nmの広い波長帯において96%以上のTE/TM変換率を,素子長150μm,過剰損失1.6dB以下で実証した.さらに,長さの異なる同素子を用いて出力のストークスパラメータを測定することにより,変換器内での偏波の振る舞いを実験的に示した.

  • モノリシック偏波多重送信回路のためのInp偏波変換器の試作と評価

    財津 優, 肥後 昭男, 種村 拓夫, 中野 義昭

    電子情報通信学会技術研究報告. OPE, 光エレクトロニクス   112 ( 259 )   155 - 160   2012年10月

     詳細

    記述言語:日本語  

  • モノリシック偏波多重送信回路のためのInp偏波変換器の試作と評価

    財津 優, 肥後 昭男, 種村 拓夫, 中野 義昭

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   112 ( 260 )   155 - 160   2012年10月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    InP系モノリシック光集積回路を用いた偏波多重伝送回路の実現をめざした導波路型偏波変換器の試作・評価結果について報告する.本素子は斜め蒸着法を用いたセルフアラインプロセスで作製される非対称構造を有しており,一般的なリッジ導波路および半導体レーザと容易に集積が可能な偏波変換素子となっている.試作した素子について特性評価を行い,1510〜1575nmの広い波長帯において96%以上のTE/TM変換率を,素子長150μm,過剰損失1.6dB以下で実証した.さらに,長さの異なる同素子を用いて出力のストークスパラメータを測定することにより,変換器内での偏波の振る舞いを実験的に示した.

  • モノリシック偏波多重送信回路のためのInP偏波変換器の試作と評価

    財津優, 肥後昭男, 種村拓夫, 中野義昭

    電子情報通信学会技術研究報告   112 ( 258(OCS2012 41-75) )   155 - 160   2012年10月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語  

  • モノリシック偏波多重送信回路のためのInp偏波変換器の試作と評価

    財津 優, 肥後 昭男, 種村 拓夫, 中野 義昭

    電子情報通信学会技術研究報告. OCS, 光通信システム   112 ( 258 )   155 - 160   2012年10月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    InP系モノリシック光集積回路を用いた偏波多重伝送回路の実現をめざした導波路型偏波変換器の試作・評価結果について報告する.本素子は斜め蒸着法を用いたセルフアラインプロセスで作製される非対称構造を有しており,一般的なリッジ導波路および半導体レーザと容易に集積が可能な偏波変換素子となっている.試作した素子について特性評価を行い,1510〜1575nmの広い波長帯において96%以上のTE/TM変換率を,素子長150μm,過剰損失1.6dB以下で実証した.さらに,長さの異なる同素子を用いて出力のストークスパラメータを測定することにより,変換器内での偏波の振る舞いを実験的に示した.

  • モノリシック偏波多重送信回路のためのInP偏波変換器の試作と評価(超高速伝送・変復調・分散補償技術,超高速光信号処理技術,広帯域光増幅・WDM技術,受光デバイス,高光出力伝送技術,一般(ECOC報告))

    財津 優, 肥後 昭男, 種村 拓夫, 中野 義昭

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   112 ( 260 )   155 - 160   2012年10月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    InP系モノリシック光集積回路を用いた偏波多重伝送回路の実現をめざした導波路型偏波変換器の試作・評価結果について報告する.本素子は斜め蒸着法を用いたセルフアラインプロセスで作製される非対称構造を有しており,一般的なリッジ導波路および半導体レーザと容易に集積が可能な偏波変換素子となっている.試作した素子について特性評価を行い,1510〜1575nmの広い波長帯において96%以上のTE/TM変換率を,素子長150μm,過剰損失1.6dB以下で実証した.さらに,長さの異なる同素子を用いて出力のストークスパラメータを測定することにより,変換器内での偏波の振る舞いを実験的に示した.

  • モノリシック偏波多重送信回路のためのInP偏波変換器の試作と評価(超高速伝送・変復調・分散補償技術,超高速光信号処理技術,広帯域光増幅・WDM技術,受光デバイス,高光出力伝送技術,一般(ECOC報告))

    財津 優, 肥後 昭男, 種村 拓夫, 中野 義昭

    電子情報通信学会技術研究報告. OCS, 光通信システム   112 ( 258 )   155 - 160   2012年10月 (   ISSN:0913-5685 )

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    InP系モノリシック光集積回路を用いた偏波多重伝送回路の実現をめざした導波路型偏波変換器の試作・評価結果について報告する.本素子は斜め蒸着法を用いたセルフアラインプロセスで作製される非対称構造を有しており,一般的なリッジ導波路および半導体レーザと容易に集積が可能な偏波変換素子となっている.試作した素子について特性評価を行い,1510〜1575nmの広い波長帯において96%以上のTE/TM変換率を,素子長150μm,過剰損失1.6dB以下で実証した.さらに,長さの異なる同素子を用いて出力のストークスパラメータを測定することにより,変換器内での偏波の振る舞いを実験的に示した.

  • Fabrication of Monolithic Integrated Series-Connected GaAs Photovoltaic Cells for Concentrator Applications

    Kentaroh Watanabe, Yugo Yamada, Minato Senou, Masakazu Sugiyama, Yoshiaki Nakano

    JAPANESE JOURNAL OF APPLIED PHYSICS   51 ( 10 )   2012年10月 (   ISSN:0021-4922   eISSN:1347-4065 )

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    記述言語:英語   出版者・発行元:JAPAN SOC APPLIED PHYSICS  

    Aiming at reducting in Joule energy loss of a photovoltaic cell under sunlight concentration, monolithic integration of GaAs cells has been realized, in which five subcells were connected in series and the total surface area of the cells occupied over 80% of the whole chip area. Using plasma etching with Cl-2, a sufficiently sharp mesa for device isolation was obtained. Insulation between etched mesa sidewalls and interconnect electrodes proved to be the most significant issues for the purpose of eliminating shunt resistance and securing a reasonable fill factor; the SiO2 layer deposited by sputtering was much superior to polyimide as an insulator. The fabricated test device showed a short circuit current density of 20.7 mA/cm(2) and an open circuit voltage of 4.79 V, which were consistent with the values for a single subcell. (C) 2012 The Japan Society of Applied Physics

    DOI: 10.1143/JJAP.51.10ND18

  • Effect of Quantum Well on the Efficiency of Carrier Collection in InGaAs/GaAsP Multiple Quantum Well Solar Cells

    Hiromasa Fujii, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano

    JAPANESE JOURNAL OF APPLIED PHYSICS   51 ( 10 )   2012年10月 (   ISSN:0021-4922   eISSN:1347-4065 )

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    記述言語:英語   出版者・発行元:IOP PUBLISHING LTD  

    For a quantitative evaluation of the carrier transport dynamics of multiple quantum well (MQW) solar cells, carrier collection efficiency (CCE) was defined and its measurement procedure was proposed. CCE is essentially the quantum efficiency normalized to the saturation value at a reverse bias. It allows us to know whether substantial carriers are actually extracted at any bias voltage, and to uncover the bottleneck problems of carrier transport that emerge at the operation bias. The advantage of CCE analysis is that the dynamics of photoexcited carriers can be selectively examined independently of the diode characteristics of the devices if the effects of resistance are small enough. In the present study, GaAs p-i-n solar cells including various numbers of InGaAs/GaAsP MQWs with a band gap of 1.2 eV in the i-region of equal thickness were fabricated and characterized. Interfered carrier transport by increasing the well number was quantitatively and directly evaluated. With up to 30 periods of MQWs, the carriers generated, especially in the wells, were less likely to be collected than those generated in the top p-region at a moderate forward bias, but collection of both was found to be degraded severely with 40 periods of MQWs. (C) 2012 The Japan Society of Applied Physics

    DOI: 10.1143/JJAP.51.10ND04

  • Effects of Background Zn Doping on the Performance of InGaAs/GaAsP Multiple Quantum Well Solar Cells Grown by a Planetary Metal Organic Vapor Phase Epitaxy Reactor

    Hassanet Sodabanlu, Shaojun Ma, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano

    JAPANESE JOURNAL OF APPLIED PHYSICS   51 ( 10 )   2012年10月 (   ISSN:0021-4922   eISSN:1347-4065 )

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    記述言語:英語   出版者・発行元:JAPAN SOC APPLIED PHYSICS  

    The effects of background Zn doping on the performance of p-i-n GaAs solar cells with InGaAs/GaAsP multiple quantum wells (MQWs) in i-GaAs layer have been studied. The crystal growth was done by a planetary metalorganic vapor phase epitaxy (MOVPE) reactor. The background Zn doping, in an order of 10(17) cm(-3), degraded the solar cell efficiency by modifying the energy band diagram in a way that obstructed carrier transports. It was shown by calculation that the carrier transports across the MQWs region suffered from decrease in built-in electric field in absorber layers, leading to an efficiency loss by radiative and nonradiative recombinations. Consequently, the external quantum efficiency and the current density of a Zn-contaminated MQW solar cell were terribly poor. Reactor baking at 850 degrees C for 20 min seems to remove Zn residues effectively without noticeable effects on the succeeding growth of MQW solar cells. The InGaAs/GaAsP MQWs fabricated in the thermally cleaned reactor have shown a potential to extend the absorption edge of GaAs solar cells and to improve the efficiency of multi-junction solar cells by current matching. Therefore, the growth of InGaAs/GaAsP MQWs by planetary MOVPE reactors requires a careful treatment regarding the background doping issue. (C) 2012 The Japan Society of Applied Physics

    DOI: 10.1143/JJAP.51.10ND15

  • Impact of Strain Accumulation on InGaAs/GaAsP Multiple-Quantum-Well Solar Cells: Direct Correlation between In situ Strain Measurement and Cell Performances

    Hassanet Sodabanlu, Shaojun Ma, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano

    JAPANESE JOURNAL OF APPLIED PHYSICS   51 ( 10 )   2012年10月 (   ISSN:0021-4922   eISSN:1347-4065 )

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    記述言語:英語   出版者・発行元:JAPAN SOC APPLIED PHYSICS  

    The effects of accumulating strain inside InGaAs/GaAsP multiple-quantum-well (MQW) solar cells were investigated and their correlation with in situ wafer curvature measurement was examined. The p-i-n GaAs solar cells, containing 20-period InGaAs/GaAsP MQWs in an i-GaAs layer, were fabricated by metalorganic vapor phase epitaxy. The strain inside MQWs was varied by changing In content in an InGaAs well, while maintaining other parameters. As evidenced by curvature transience, the excessive strain led to lattice relaxation, resulting in defects, dislocations, and poor crystal quality. Consequently, short circuit current density and open circuit voltage deteriorated, and solar cell performance degraded. The highest conversion efficiency was obtained in a strain-balanced MQW solar cell. InGaAs/GaAsP MQWs have a great potential for extending the absorption edge of GaAs cells and for enhancing the efficiency of III/V multijunction solar cells by current matching. Hence, the growth of InGaAs/GaAsP MQWs for photovoltaic application requires a strain monitoring system and careful control such that the accumulating strain is minimized. (C) 2012 The Japan Society of Applied Physics

    DOI: 10.1143/JJAP.51.10ND16

  • Optimization of Gas-Switching Sequence for InGaAs/GaAsP Superlattice Structures Using In situ Wafer Curvature Monitoring

    ShaoJun Ma, Hassanet Sodabanlu, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano

    JAPANESE JOURNAL OF APPLIED PHYSICS   51 ( 10 )   2012年10月 (   ISSN:0021-4922   eISSN:1347-4065 )

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    記述言語:英語   出版者・発行元:IOP PUBLISHING LTD  

    By high-accuracy in situ curvature measurement during the growth of InGaAs/GaAsP superlattice structures by metal organic vapor phase epitaxy, we have successfully observed the effect of thin GaAs insertion layers between InGaAs wells and GaAsP barriers on strain control. By analyzing curvature transients, we found that an inadequate gas-switching sequence induces the carry over of indium from the InGaAs layer to the overlying GaAs insertion layer. The resulting carry-over layer has an estimated thickness of 0.6nm and adversely affects the average strain of the structure. Through consideration of the kinetics of surface atoms, it has been revealed that an optimized gas-switching sequence with a 1 s hydrogen purge after the growth of InGaAs wells is effective for preventing the carry over. (C) 2012 The Japan Society of Applied Physics

    DOI: 10.1143/JJAP.51.10ND09

  • 高効率太陽電池とその開発動向 (特集 グリーンエネルギーにおける太陽光発電・太陽電池の現状と課題)

    中野 義昭, 杉山 正和, 渡辺 健太郎

    光技術コンタクト = Optical and electro-optical engineering contact   50 ( 10 )   4 - 13   2012年10月 (   ISSN:0913-7289 )

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    記述言語:日本語   出版者・発行元:光学工業技術協会  

  • CI-2-8 新技術による新市場の創造を目指して : 大学発ベンチャーの挑戦(CI-2.基礎研究から実用化に至る死の谷越えの視点からみた光デバイスの課題,依頼シンポジウム,ソサイエティ企画)

    Yit Foo Cheong, 宋 学良, 中野 義昭

    電子情報通信学会ソサイエティ大会講演論文集   2012 ( 1 )   "SS - 29"-"SS-30"   2012年8月

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • CI-1-2 InP光集積回路に適合した導波路型偏波変換器(CI-1.偏波多重伝送用導波路デバイスにおける偏波制御技術,依頼シンポジウム,ソサイエティ企画)

    財津 優, 肥後 昭男, 種村 拓夫, 中野 義昭

    電子情報通信学会ソサイエティ大会講演論文集   2012 ( 1 )   "SS - 3"-"SS-4"   2012年8月

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • AlGaN/GaN光電気化学電極における溶液の影響

    中村亮裕, 杉山正和, 中野義昭, 藤井克司

    応用物理学会学術講演会講演予稿集(CD-ROM)   73rd   ROMBUNNO.11P-H7-5   2012年8月

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    記述言語:日本語  

  • InGaAs/GaAsP量子井戸太陽電池におけるバックグラウンドドーピングの影響

    藤井宏昌, 王云鵬, 渡辺健太郎, 杉山正和, 中野義昭

    応用物理学会学術講演会講演予稿集(CD-ROM)   73rd   ROMBUNNO.12A-H8-1   2012年8月

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    記述言語:日本語  

  • X線マイクロ回折法によるSi(111)上InGaAsの成長メカニズム解析

    渡邉翔大, 藤本悠, 渡辺健太郎, 肥後昭男, 今井康彦, 木村滋, 杉山正和, 中野義昭

    応用物理学会学術講演会講演予稿集(CD-ROM)   73rd   ROMBUNNO.11P-J-2   2012年8月

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    記述言語:日本語  

  • 光閉じ込め構造を用いた高効率量子井戸太陽電池の作製

    KIM B, 渡辺健太郎, 杉山正和, 中野義昭

    応用物理学会学術講演会講演予稿集(CD-ROM)   73rd   ROMBUNNO.12A-H8-2   2012年8月

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    記述言語:日本語  

  • 光学的に薄い吸収層を持つ太陽電池における薄膜化光閉じ込め構造

    渡辺健太郎, KIM B, SODABANLU H, MA S. J, 杉山正和, 中野義昭

    応用物理学会学術講演会講演予稿集(CD-ROM)   73rd   ROMBUNNO.11P-H8-10   2012年8月

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    記述言語:日本語  

  • Si(111)上InAsの選択ヘテロエピタキシャル成長における界面電気伝導特性

    渡邉翔大, 杉山正和, 渡辺健太郎, 肥後昭男, 中野義昭

    化学工学会秋季大会研究発表講演要旨集(CD-ROM)   44th   ROMBUNNO.G219   2012年8月

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    記述言語:日本語  

  • 補償ドーピングによるInGaAs/GaAsP量子井戸太陽電池のキャリア回収効率向上

    藤井宏昌, 杉山正和, 王云鵬, 渡辺健太郎, 中野義昭

    化学工学会秋季大会研究発表講演要旨集(CD-ROM)   44th   ROMBUNNO.G217   2012年8月

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    記述言語:日本語  

  • 高集光発電用マイクロ集積直列接続GaAs太陽電池の試作

    瀬能未奈都, 渡辺健太郎, 杉山正和, 中野義昭

    化学工学会秋季大会研究発表講演要旨集(CD-ROM)   44th   ROMBUNNO.G215   2012年8月

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    記述言語:日本語  

  • Effect of hetero-interfaces on in situ wafer curvature behavior in InGaAs/GaAsP strain-balanced MQWs

    ShaoJun Ma, Yunpeng Wang, Hassanet Sodabanlu, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano

    JOURNAL OF CRYSTAL GROWTH   352 ( 1 )   245 - 248   2012年8月 (   ISSN:0022-0248   eISSN:1873-5002 )

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    記述言語:英語   出版者・発行元:ELSEVIER SCIENCE BV  

    Using high-accuracy in situ curvature measurement during growth of InGaAs/GaAsP strain-compensated multiple quantum wells (MQWs) by metal organic vapor phase epitaxy (MOVPE), we have successfully clarified the effect of hetero-interfaces on strain control in InGaAs/GaAsP strain-balanced MQWs. By analyzing curvature transients and X-ray diffraction (XRD) fringe patterns, we found that an inadequate gas-switching sequence induces unintended atomic content at the interfaces between InGaAs and GaAsP and then influences the average strain of the structure. Through considering the atomic characteristics and measuring the reflectance anisotropy transient during growth, it has been revealed that the optimized stabilization time for arsenic and phosphorus mixture before GaAsP barrier growth should be longer than 3 s at 610 degrees C. (C) 2011 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jcrysgro.2011.11.040

  • Management of highly-strained heterointerface in InGaAs/GaAsP strain-balanced superlattice for photovoltaic application

    Yun Peng Wang, Shao Jun Ma, Kentarou Watanabe, Masakazu Sugiyama, Yoshiaki Nakano

    JOURNAL OF CRYSTAL GROWTH   352 ( 1 )   194 - 198   2012年8月 (   ISSN:0022-0248   eISSN:1873-5002 )

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    記述言語:英語   出版者・発行元:ELSEVIER SCIENCE BV  

    We report an implementation of a strain-balanced superlattice structure in a photovoltaic device. A thin-period structure is an appropriate design for a strain-balanced epitaxy allowing minimum stress accumulation in the highly strained quantum well (QW). However, a large number of interfaces cause a serious issue as critical as strain balancing. Such a structure suffers from degraded crystal quality with the increase of number of interfaces; and the atomic contents within the well or barrier also become difficult to control. With help from in situ reflectivity measurement and x-ray diffraction, it was deduced that such an interface issue could result from unpredictable interfacial strain relaxation and irregular interface morphology between strained well and barrier. According to this mechanism, we developed a smart interface management, insertion of a monolayer-thin strain-neutral GaAs, to avoid diffused interfaces and morphology degradation. The modified superlattice solar cell exhibits good performance. (c) 2011 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jcrysgro.2011.12.049

  • Uniformity improvement of selectively-grown InGaAs micro-discs on Si

    Masakazu Sugiyama, Yoshiyuki Kondo, Mitsuru Takenaka, Shinichi Takagi, Yoshiaki Nakano

    JOURNAL OF CRYSTAL GROWTH   352 ( 1 )   229 - 234   2012年8月 (   ISSN:0022-0248   eISSN:1873-5002 )

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    記述言語:英語   出版者・発行元:ELSEVIER SCIENCE BV  

    Dislocation-free InGaAs micro-disks, having a diameter of approximately 5 mu m and a thickness of approximately 0.2 mu m, have been grown on Si(111) substrate patterned with SiO2, with excellent uniformity in shape. This shape uniformity was dependent on the initial growth of InAs on Si windows. For the growth of well-controlled lateral islands, it is mandatory to cover the openings completely with a single-domain InAs crystal prior to the subsequent growth of InGaAs, the Ga content of which is essential for lateral growth. Moreover, the shape uniformity of InAs islands strongly affected the uniformity of the InGaAs islands' shape. On the basis of these observations, the diameter of Si openings was reduced to 1 mu m to make it easier to fill the openings with InAs without failure. A two-step growth of InAs was devised to achieve void-less nucleation and lateral growth at the same time. It was also found that the recess at the boundary between Si and the SiO2 mask played a vital role to limit the lateral size of InAs islands: when an InAs island hit that boundary, the lateral growth was suppressed and a stable {-110} facet emerged, and the growth seemed to wait for all the {-110} sidewalls to emerge. This mechanism compensated variation in the progress of InAs growth due to scattered timing of InAs nucleation. Therefore, for the purpose of improving the shape uniformity of InGaAs micro-disks, transition from InAs to InGaAs growth should be attempted after all the sidewalls are covered with {-110} facets and before vertical growth starts. (C) 2011 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jcrysgro.2011.11.044

  • Suppressed lattice relaxation during InGaAs/GaAsP MQW growth with InGaAs and GaAs ultra-thin interlayers

    Hiromasa Fujii, Yunpeng Wang, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano

    JOURNAL OF CRYSTAL GROWTH   352 ( 1 )   239 - 244   2012年8月 (   ISSN:0022-0248   eISSN:1873-5002 )

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    記述言語:英語   出版者・発行元:ELSEVIER SCIENCE BV  

    InGaAs/GaAsP strain-compensated multiple quantum wells (MQW) with an effective bandgap of 1.2 eV are promising candidate materials for solar cells applications. Since high indium content in wells is needed to achieve such a low bandgap, lattice relaxation can easily occur during crystal growth. Here, we propose graded interlayers, consisting of ultra-thin GaAs and InGaAs with lower indium content, inserted between wells and barriers to prevent relaxation during growth and to achieve better crystal quality. Lattice relaxation was detected by in-situ monitoring of surface reflectance including an anisotropic component. Our method allowed the number of MQW periods before detectable lattice relaxation to reach approximately three times that without interlayers. Over 100 periods of In0.26Ga0.74As (7.0 nm)/GaAs0.60P0.40 (9.2 nm) MQW, with an absorption edge at 1.2 eV, were successfully piled up as a result. Lattice relaxation without interlayers was caused dominantly by dislocations due to the large lattice mismatch between a well and a barrier, and graded interlayers made the hetero-interfaces smoother so that the subsequent layers could be more easily grown. Transmission electron microscopy confirmed the existence of the interlayer at both ends of In0.26Ga0.74As layer, with graded indium content and the thickness of 1.2-1.8 nm. (C) 2011 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jcrysgro.2011.11.036

  • The effect of thin gap insertion layer on InP nanostructure grown by metal-organic vapour phase epitaxys

    Soe Soe Han, Somsak Panyakeow, Somchai Ratanathammaphan, Akio Higo, Wang Yunpeng, Momoko Deura, Masakasu Sugiyama, Yoshiaki Nakano

    CANADIAN JOURNAL OF CHEMICAL ENGINEERING   90 ( 4 )   915 - 918   2012年8月 (   ISSN:0008-4034 )

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    記述言語:英語   出版者・発行元:WILEY-BLACKWELL  

    The effect of thin GaP insertion layers on the structural and optical properties of InP/In0.49Ga0.51P self-assembled quantum dots (SAQDs) on GaAs (001) substrate grown by metalorganic vapour phase epitaxy has been reported. The properties of InP/In0.49Ga0.51P SAQDs are modified when a thin (14 ML) GaP layer is inserted underneath the InP quantum dots (QDs). Deposition of the GaP insertion layer affects the dot dimension and improves the size uniformity. The density, dimension and uniformity of InP QDs strongly depend on the GaP insertion layer thickness. This variation in QD size is a result of a material nucleation effect caused by atomic intermixing between the InP QDs and underlying GaP insertion layer and surface energy. The insertion of GaP layer led to tuning the emission wavelength and narrowing of full width at half maximum (FWHM) when they are characterised by PL measurements at room temperature. (C) 2012 Canadian Society for Chemical Engineering

    DOI: 10.1002/cjce.21648

  • 次世代高効率太陽電池の研究開発動向―50%超の変換効率を目指して

    中野義昭, 渡辺健太郎, 杉山正和

    マリンエンジニアリング   47 ( 4 )   535 - 542   2012年7月 (   ISSN:1346-1427 )

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    記述言語:日本語  

    DOI: 10.5988/jime.47.535

  • 次世代高効率太陽電池の研究開発動向 : 50%超の変換効率を目指して

    中野 義昭, 渡辺 健太郎, 杉山 正和

    Marine engineering : journal of the Japan Institution of Marine Engineering = マリンエンジニアリング : 日本マリンエンジニアリング学会誌   47 ( 4 )   535 - 542   2012年7月 (   ISSN:1346-1427 )

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    記述言語:日本語  

    DOI: 10.5988/jime.47.535

  • III-V/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding

    Masafumi Yokoyama, Sanghyeon Kim, Rui Zhang, Noriyuki Taoka, Yuji Urabe, Tatsuro Maeda, Hideki Takagi, Tetsuji Yasuda, Hisashi Yamada, Osamu Ichikawa, Noboru Fukuhara, Masahiko Hata, Masakazu Sugiyama, Yoshiaki Nakano, Mitsuru Takenaka, Shinichi Takagi

    APPLIED PHYSICS EXPRESS   5 ( 7 )   2012年7月 (   ISSN:1882-0778   eISSN:1882-0786 )

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    記述言語:英語   出版者・発行元:JAPAN SOC APPLIED PHYSICS  

    We demonstrated the integration of high-mobility channel InGaAs n-channel and Ge p-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs and pMOSFETs) with self-aligned Ni-InGaAs and Ni-Ge metal source/drain (S/D) on a Ge substrate by direct wafer bonding (DWB). Ni-based metal S/D and Al2O3-based gate stacks have realized the fabrication of high-electron-mobility InGaAs-on-insulator (InGaAs-OI) nMOSFETs and high-hole-mobility Ge pMOSFETs at the same time. The InGaAs-OI nMOSFETs and Ge pMOSFETs exhibited high electron and hole mobilities of 1800 and 260 cm(2) V-1 s(-1) and mobility enhancements against Si of 3.5x and 2.3x, respectively. (C) 2012 The Japan Society of Applied Physics

    DOI: 10.1143/APEX.5.076501

  • Integrated phased-array switches for large-scale photonic routing on chip

    Ibrahim M. Soganci, Takuo Tanemura, Yoshiaki Nakano

    LASER & PHOTONICS REVIEWS   6 ( 4 )   549 - 563   2012年7月 (   ISSN:1863-8880   eISSN:1863-8899 )

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    記述言語:英語   出版者・発行元:WILEY-V C H VERLAG GMBH  

    Integrated phased-array optical switches, having a high port-count scalability and broad spectral coverage, can potentially be used as building blocks of large-scale optical routers. In this article, recent works on monolithically integrated InP phased-array switches and their applications to optical packet switching (OPS) are reviewed. After describing the theory of integrated phased-array switches, experimental results on a single-stage 1 x 16 switch, which features wavelength-independent nanosecond switching characteristics, are presented. A series of OPS experiments, employing high-bit-rate optical packets with different modulation formats and a tunable optical buffering experiment are presented as potential applications of these switches. Finally, a large-scale monolithic switch with as many as 100 ports is realized on a single photonic integrated circuit by cascading the phased-array switches.

    DOI: 10.1002/lpor.201100015

  • Photocurrent Generation by Two-Step Photon Absorption With Quantum-Well Superlattice Cell

    Masakazu Sugiyama, Yunpeng Wang, Kentaroh Watanabe, Takayuki Morioka, Yoshitaka Okada, Yoshiaki Nakano

    IEEE JOURNAL OF PHOTOVOLTAICS   2 ( 3 )   298 - 302   2012年7月 (   ISSN:2156-3381   eISSN:2156-3403 )

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    記述言語:英語   出版者・発行元:IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC  

    We have observed photocurrent due to two-step photon absorption using an InGaAs/GaAsP strain-balanced quantum-well (QW) superlattice cell, with barrier thickness of 3 nm. Upon infrared irradiation with a filtered air mass 1.5 light source (lambda &gt; 1.4 mu m), quantum efficiency was increased by 0.8% at the wavelength range corresponding to the absorption of the quantum wells. No efficiency enhancement was observed either for a conventional QW solar cell with thick (11 nm) barriers or for a GaAs pin cell, suggesting that efficient separation of photogenerated electrons and holes in the superlattice is essential for this achievement of two-step photon absorption. The quantum efficiency of such two-step photocurrent generation can be enhanced by specific tailoring of a superlattice layer structure, by which the QW superlattice will be a possible active region for an intermediate-band solar cell.

    DOI: 10.1109/JPHOTOV.2012.2196258

  • InGaAsP/InPフェーズドアレイ光偏向素子の設計および特性検討

    CHOI Sunghan, KWACK Myung‐Joon, 財津優, CHOI Soohyeck, 肥後昭男, 種村拓夫, 中野義昭

    光学シンポジウム講演予稿集   37th   49 - 50   2012年6月

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    記述言語:日本語  

  • Effects of Strain on the Performance of InGaAs/GaAsP Multiple-Quantum-Well Solar Cells Correlated with In situ Curvature Monitoring

    Hassanet Sodabanlu, Shaojun Ma, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano

    APPLIED PHYSICS EXPRESS   5 ( 6 )   2012年6月 (   ISSN:1882-0778 )

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    記述言語:英語   出版者・発行元:JAPAN SOC APPLIED PHYSICS  

    The performance of InGaAs/GaAsP multiple-quantum-well (MQW) solar cells was evaluated and correlated with in situ curvature measurement. The average strain inside MQWs was varied by changing the GaAsP thickness. Strain-balanced MQW cells exhibited the best performance. Highly strained MQW cells suffered from defects and dislocations, resulting in poor efficiency. The average strain inside the structure had good agreement with cell properties. Strain-balanced InGaAs/GaAsP MQWs seem to have good potential for enhancing the efficiency of lattice-matched III-V/Ge multiple-junction solar cells. Hence, the crystal growth process should be precisely monitored and carefully controlled in a manner such that the extent of strain accumulation is minimized. (C) 2012 The Japan Society of Applied Physics

    DOI: 10.1143/APEX.5.062301

  • Integrated optical buffer using InP 18 switch and silica-based delay line circuit

    M. J. Kwack, T. Oyama, Y. Hashizume, S. Mino, M. Zaitsu, T. Tanemura, Y. Nakano

    2012 Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference, OFC/NFOEC 2012   2012年5月 (     eISSN:2162-2701 )

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    We demonstrate a compact optical buffer module, comprising an InP 18 phased-array switch and a silica-based delay line circuit. Tunable and uniform buffering of up to 21 ns is obtained with a 3-ns temporal resolution. © 2012 OSA.

  • InP光集積回路による省エネルギー光スイッチング技術

    種村拓夫, 中野義昭

    レーザー研究   40 ( 5 )   344 - 350   2012年5月 (   ISSN:0387-0200 )

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    記述言語:日本語   出版者・発行元:レーザー学会  

  • InP光集積回路による省エネルギー光スイッチング技術

    種村 拓夫, 中野 義昭

    レーザー研究   40 ( 5 )   344 - 350   2012年5月 (   ISSN:0387-0200 )

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    記述言語:日本語   出版者・発行元:レーザー学会  

  • Control of In Surface Segregation and Inter-Diffusion in GaAs on InGaP Grown by Metal-Organic Vapor Phase Epitaxy

    Yasuyuki Fukushima, Takayuki Nakano, Yoshiaki Nakano, Yukihiro Shimogaki

    JAPANESE JOURNAL OF APPLIED PHYSICS   51 ( 5 )   2012年5月 (   ISSN:0021-4922 )

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    記述言語:英語   出版者・発行元:JAPAN SOC APPLIED PHYSICS  

    In order to fabricate abrupt heterointerfaces of the GaAs/InGaP system by metal-organic vapor phase epitaxy (MOVPE), we studied the In atom distribution by X-ray photoelectron spectroscopy (XPS). The systematic XPS depth profile analyses revealed that the InGaP surface contains an excess amount of In atoms owing to surface segregation. The excess In atoms diffuse into the GaAs layer and cause compositional mixing at the interface of GaAs on InGaP. In order to suppress the interdiffusion and surface segregation of In atoms into GaAs on InGaP, we have developed a novel gas switching sequence for growing GaAs on InGaP. That is, after the growth of InGaP, only tertiarybutylphosphine (TBP) was introduced, and after stopping the supply of TBP, trimethylgallium (TMGa) was pre-introduced to the reactor before the growth of GaAs. Then tertiarybutylarsine (TBAs) was allowed to flow to initiate GaAs growth. This novel gas switching sequence contributed to the formation of abrupt heterointerfaces of GaAs on InGaP. (C) 2012 The Japan Society of Applied Physics

    DOI: 10.1143/JJAP.51.055601

  • Precise structure control of GaAs/InGaP hetero-interfaces using metal organic vapor phase epitaxy and its abruptness analyzed by STEM

    Takayuki Nakano, Tomonari Shioda, Naomi Enomoto, Eiji Abe, Masakazu Sugiyama, Yoshiaki Nakano, Yukihiro Shimogaki

    JOURNAL OF CRYSTAL GROWTH   347 ( 1 )   25 - 30   2012年5月 (   ISSN:0022-0248   eISSN:1873-5002 )

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    記述言語:英語   出版者・発行元:ELSEVIER SCIENCE BV  

    Fabrication of abrupt InGaP on GaAs (InGaP/GaAs) and GaAs on InGaP (GaAs/InGaP) hetero-interfaces has been difficult using metal organic vapor phase epitaxy (MOVPE) due to the exchange of P and As during the fabrication steps. Indium (In) surface segregation during InGaP growth also degrades the abruptness. Here, the MOVPE gas-switching sequence to fabricate atomically abrupt hetero-interfaces was optimized and the effects of this optimization on the hetero-interface abruptness were quantitatively evaluated using the Z-contrast method with scanning transmission electron microscopy (STEM). Results revealed that (a) in the fabrication of InGaP/GaAs hetero-interface, the GaAs top layer should be stabilized using As-source gas supply, and the excess As layer on GaAs should be terminated using an additional supply of Ga species, and (b) in the fabrication of GaAs/InGaP interface, the InGaP layer should be grown using the flow modulation method to suppress In surface segregation. In conclusion, the abruptness of hetero-interfaces of InGaP/GaAs and GaAs/InGaP was improved by using these optimized gas-switching sequences. (C) 2012 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jcrysgro.2012.02.038

  • Strain-Balanced InGaAs/GaAsP Superlattice Solar Cell with Enhanced Short-Circuit Current and a Minimal Drop in Open-Circuit Voltage

    Yun Peng Wang, Kentaroh Watanabe, Yu Wen, Masakazu Sugiyama, Yoshiaki Nakano

    APPLIED PHYSICS EXPRESS   5 ( 5 )   2012年5月 (   ISSN:1882-0778   eISSN:1882-0786 )

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    記述言語:英語   出版者・発行元:IOP PUBLISHING LTD  

    A strain-balanced InGaAs/GaAsP superlattice (SL) was inserted in the intrinsic region of a p-i-n GaAs to adjust the performance of a photovoltaic device. The SL cell exhibited an excellent enhancement in short-circuit current (I-sc) of 3.0 mA/cm(2), while maintaining a minimum drop of open-circuit voltage (V-oc) of 0.03 V compared with those of a control GaAs p-i-n cell. For the device fabrication, the implementation of a strain-balanced epitaxy by using an interface managing (IM) technique is a primary breakthrough to obtain SL with a high crystal quality. The formation of superlattice may enable a hybrid carrier extraction mechanism, combining tunneling and thermal hopping, which may enhance the carrier transportation within the SL region. (c) 2012 The Japan Society of Applied Physics

    DOI: 10.1143/APEX.5.052301

  • C-3-80 フェーズドアレイを用いた半導体光偏向素子の設計(C-3.光エレクトロニクス,一般セッション)

    崔 成漢, 郭 命俊, 財津 優, 崔 洙赫, 肥後 昭男, 種村 昭男, 中野 義昭

    電子情報通信学会総合大会講演論文集   2012 ( 1 )   229 - 229   2012年3月

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • 垂直出射型光導波路素子のためのInP斜めドライエッチングの開発

    菊田和孝, 肥後昭男, 中野義昭

    電気学会全国大会講演論文集   2012 ( 3 )   186   2012年3月

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    記述言語:日本語  

  • InGaAs/GaAsP歪み補償超格子太陽電池における開放電圧の集光依存性

    渡辺健太郎, WANG Y, SODABANLU H, MA S.J, 杉山正和, 中野義昭

    応用物理学関係連合講演会講演予稿集(CD-ROM)   59th   ROMBUNNO.18P-C1-6   2012年2月

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    記述言語:日本語  

  • Si(111)上InAsの選択ヘテロエピタキシャル成長における界面電気伝導特性

    渡邉翔大, 渡辺健太郎, 杉山正和, 中野義昭

    応用物理学関係連合講演会講演予稿集(CD-ROM)   59th   ROMBUNNO.16A-A8-2   2012年2月

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    記述言語:日本語  

  • 圧電素子光熱変換分光法によるInGaAs/GaAsP歪補償量子井戸太陽電池のキャリア再結合損失過程の積層数依存性

    中野陽介, 相原健人, 藤井宏昌, 福山敦彦, 杉山正和, 中野義昭, 碇哲雄

    応用物理学関係連合講演会講演予稿集(CD-ROM)   59th   ROMBUNNO.17A-E1-3   2012年2月

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    記述言語:日本語  

  • 次世代高性能CMOS実現に向けた高移動度III‐V/GeチャネルMOSFETの集積化

    横山正史, KIM Sanghyeon, ZHANG Rui, 田岡紀之, 卜部友二, 前田辰郎, 高木秀樹, 安田哲二, 山田永, 市川磨, 福原昇, 秦雅彦, 杉山正和, 中野義昭, 竹中充, 高木信一

    応用物理学関係連合講演会講演予稿集(CD-ROM)   59th   ROMBUNNO.16A-A1-1   2012年2月

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    記述言語:日本語  

  • 補償ドーピングによるInGaAs/GaAsP量子井戸太陽電池のキャリア回収効率向上

    藤井宏昌, 渡辺健太郎, 杉山正和, 中野義昭

    応用物理学関係連合講演会講演予稿集(CD-ROM)   59th   ROMBUNNO.18A-C1-5   2012年2月

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    記述言語:日本語  

  • 硫化アンモニウム溶液で表面処理したInGaAs(100),(111)A,(111)BのMOS界面特性

    横山正史, 鈴木麗菜, 田岡紀之, JEVASUWAN Wipakorn, 前田辰郎, 安田哲二, 市川磨, 山田永, 福原昇, 秦雅彦, 杉山正和, 中野義昭, 竹中充, 高木信一

    応用物理学関係連合講演会講演予稿集(CD-ROM)   59th   ROMBUNNO.17P-A4-17   2012年2月

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    記述言語:日本語  

  • 高集光発電用マイクロ集積直列接続GaAs太陽電池の試作

    瀬能未奈都, 渡辺健太郎, 杉山正和, 中野義昭

    応用物理学関係連合講演会講演予稿集(CD-ROM)   59th   ROMBUNNO.18A-C1-7   2012年2月

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    記述言語:日本語  

  • 高アスペクト比垂直ナノギャップを用いた高圧対応MEMSピラニーゲージ

    久保田雅則, 三田吉郎, 百瀬健, 近藤愛子, 霜垣幸浩, 中野義昭, 杉山正和

    応用物理学関係連合講演会講演予稿集(CD-ROM)   59th   ROMBUNNO.16A-E3-9   2012年2月

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    記述言語:日本語  

  • Design of Photonic Crystal Cavity for Hexagonal Islands

    Jon Oyvind Kjellman, Akio Higo, Yoshiaki Nakano

    2012 IEEE PHOTONICS CONFERENCE (IPC)   272 - 273   2012年 (   ISSN:2374-0140 )

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    記述言語:英語   出版者・発行元:IEEE  

    A novel photonic crystal cavity is proposed for applications with strict area limitations. Initial FDTD simulations shows higher Q-factor at the cost of a larger mode volume when compared with an optimized H1 cavity.

    DOI: 10.1109/IPCon.2012.6358597

  • A 50 nm-wide 5 μm-deep copper vertical gap formation method by a gap-narrowing post-process with Supercritical Fluid Deposition for Pirani gauge operating over atmospheric pressure

    Masanori Kubota, Yoshio Mita, Takeshi Momose, Aiko Kondo, Yukihiro Shimogaki, Yoshiaki Nakano, Masakazu Sugiyama

    Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)   204 - 207   2012年 (   ISSN:1084-6999 )

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    記述言語:英語  

    This paper describes a method to narrow trenches by metal layer growth on sidewalls with Supercritical Fluid Deposition (SCFD). Trenches are fabricated by Deep Reactive Ion Etching (DRIE) of silicon followed by copper layer deposition with SCFD. Trenches of 440 nm-wide and 5 μm-deep were eventually narrowed to 50 nm. As an application, a Pirani gauge that utilizes such 50 nm gaps to achieve operation over atmospheric pressure was fabricated and operation up to at least 0.116 MPa (1.2 bar) was confirmed. The estimated upper limit of the operation range is 1 MPa (10 bar). © 2012 IEEE.

    DOI: 10.1109/MEMSYS.2012.6170126

  • A MULTI-STEP SUPERLATTICE SOLAR CELL WITH ENHANCED SUBBAND ABSORPTION AND OPEN CIRCUIT VOLTAGE

    YunPeng Wang, Hassanet Sodabanlu, ShaoJun Ma, Hirosama Fujii, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano

    2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)   1940 - 1943   2012年 (   ISSN:0160-8371 )

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    記述言語:英語   出版者・発行元:IEEE  

    In the report, we propose a multiple stepped superlattice (MS-SL) structure, in which GaAs stepped-potential layers are sandwiched between strain-balanced InGaAs wells and GaAsP barriers, for photovoltaic application. Comparison between the normal SL cell and MS-SL cell indicate that the step design in MS-SL cell enhanced sunband absorption to the host bulk material, while reduced overall recombination loss, exhibited a surprising advantage over SL cell in conversion efficiency. According to experimental results, discussions have been made on the competition process between carrier recombinations and carrier escape kinetics from the wells.

    DOI: 10.1109/PVSC.2012.6317974

  • A Slanted InP Waveguide for Fiber Coupler using Skewed Dry Etching Process

    S. Choi, A. Higo, K. Kikuta, H. Toshiyoshi, Y. Nakano

    2012 INTERNATIONAL CONFERENCE ON OPTICAL MEMS AND NANOPHOTONICS (OMN)   202 - 203   2012年 (   ISSN:2160-5033 )

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    記述言語:英語   出版者・発行元:IEEE  

    We propose a simple and efficient off-chip coupler for vertical coupling between optical fibers and InP-based slab waveguides. Etching angle of the waveguide edge is controlled by an etching jig made of SiO2-coated aluminum for ICP-RIE. Simulation shows that maximum 71% coupling efficiency would be obtained by matrix expansion methods.

    DOI: 10.1109/OMEMS.2012.6318873

  • Carrier sweep-out time in InGaAs/GaAsP multiple quantum well solar cells by time-resolved photoluminescence: effects of well depth and barrier thickness

    Hassanet Sodabanlu, Shaojun Ma, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano

    2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)   1922 - 1925   2012年 (   ISSN:0160-8371 )

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    記述言語:英語   出版者・発行元:IEEE  

    Sweep-out times for cross-well transport in p-i-n GaAs solar cells containing 20-period of InGaAs/GaAsP multiple quantum wells were evaluated by biased time-resolved photoluminescence. Effects of InGaAs well depth and GaAsP barrier thickness were analyzed and compared with simulation of carrier escape times from a single quantum well in a presence of an electric field. The tendencies and relative values of calculated escape rates suggested that the effective barrier height is the most important parameter to determine the carrier escape times in a quantum well. The dominant transport mechanism for the MQW in this work is most likely the thermionic emission from electron ground states followed by thermal assisted tunneling depending on the structure. In order to extend the absorption edge of the MQWs while keeping strain balance, thick GaAsP barriers with a small P content is preferable in the viewpoint of carrier extraction.

    DOI: 10.1109/PVSC.2012.6317969

  • High-aspect-ratio structures for efficient light absorption and carrier transport in InGaAs/GaAsP multiple quantum well solar cells

    Hiromasa Fujii, Yunpeng Wang, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano

    Conference Record of the IEEE Photovoltaic Specialists Conference   ( 2 )   2012年 (   ISSN:0160-8371 )

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    記述言語:英語  

    High-aspect-ratio (HAR) quantum well was proposed as a general design principle to overcome the trade-off problem between the light absorption and the carrier collection in multiple quantum well (MQW) solar cells. HAR-MQW structure consists of thin wells and barriers, and its fundamental strategies are: (i) Thinner wells enhance the light absorption for 1HH transition, and make it possible to absorb the same amount of light with a thinner MQW region. (ii) Thinner barriers allow the photo-generated carriers to be extracted by means of tunneling transport. (iii) The wells must be deeper to obtain the same effective bandgap as thicker wells because of the stronger confinement. The enhanced absorption coefficient for HAR-MQW was proved by the measurement of both photo-absorption and the quantum efficiency at a sufficiently-large reverse bias. Stronger photon absorption via 1HH transition was achieved with a smaller total thickness of the wells area. In the HAR-MQW cell, although the transport of the heavy holes was found to be still dominated by thermionic processes due to its large effective mass, tunneling of the electrons was clearly observed, and the extraction efficiency of photo-excited electrons remained much higher than that of a normal MQW cell at forward biases. © 2012 IEEE.

    DOI: 10.1109/PVSC-Vol2.2013.6656741

  • InGaAsP/InP MQW FP laser and silicon platform integration by direct bonding

    Akio Higo, Ling Han Li, Eiji Higurashi, Masakazu Sugiyama, Yoshiaki Nakano

    10th International Conference on Optical Internet, COIN 2012   24 - 25   2012年 ( ISBN:9784885522635 )

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    InGaAsP/InP active layer on silicon heterointegration by Ar/O2 plasma assisted direct bonding in air was reported. The efficient current injection from SOI micro rib to InGaAsP active layer has been achieved to realized a direct-current-pumped Fabry-Perot Laser by pulse operation at 43 mA threshold current. © 2012 IEICE Institute of Electronics Informati.

  • InGaAs/GaAsP quantum-well superlattice solar cell for better carrier collection and higher efficiency

    M. Sugiyama, H. Fujii, Y. Wen, Y. Wang, H. Sodabanlu, K. Watanabe, Y. Nakano

    2012 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES (COMMAD 2012)   125 - +   2012年 (   ISSN:1097-2137 )

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    記述言語:英語   出版者・発行元:IEEE  

    InGaAs/GaAsP quantum wells (QWs) have been inserted into a GaAs p-i-n cell aiming at a better current matching of an InGaP/GaAs/Ge tandem solar cell: photon absorption at a longer wavelength range than the GaAs bandedge was attempted while keeping pseudolattice-matching to GaAs for the QW structure as a whole. The efficient extraction of photo-generated carriers from the InGaAs wells to an external circuit was vital for minimizing the drop in open-circuit voltage, which necessitated extremely-thin (similar to 3 nm) GaAsP barriers and tunnelling-assisted carrier transport. Such a superlattice structure was grown by metal-organic vapour-phase epitaxy (MOVPE) and evidenced a promising gain in current output. Under sunlight concentration (similar to 100 suns), the open-circuit voltage of the GaAs p-i-n cell was almost unchanged upon the insertion of the superlattice and the superlattice just resulted in the gain in current output.

    DOI: 10.1109/COMMAD.2012.6472392

  • InGaAs/GaAsP asymmetric quantum wells for enhancing carrier escape through resonant tunneling

    ShaoJun Ma, Hassanet Sodabanlu, YunPeng Wang, Kentaroh Watanabe, Masakazu Sugiyama, Yoshiaki Nakano

    2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)   1908 - 1910   2012年 (   ISSN:0160-8371 )

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    記述言語:英語   出版者・発行元:IEEE  

    In the multiple quantum wells system, deep well supplies wide absorption range. But at the same time, the large band offset would increase the thermionic escape time constant of carriers exponentially. We utilized resonant tunneling effect to assist the carrier collection in InGaAs/GaAsP strain-balanced multiple quantum wells (MQWs). Through the optimization of confinement energy levels and barrier thicknesses, the collection time of photo-generated carriers is calculated to be reduced significantly from several ns to a few hundred ps compared with conventional multiple quantum wells. The asymmetric MQWs for tunneling-assisted carrier escape were fabricated successfully and the carrier collection time was investigated using time-resolved photoluminescence. The advantage of the tunneling design has been confirmed.

    DOI: 10.1109/PVSC.2012.6317966

  • Monolithic inp strictly non-blocking 8×8 switch for high-speed WDM optical interconnection

    Myung Joon Kwack, Takuo Tanemura, Akio Higo, Yoshiaki Nakano

    European Conference on Optical Communication, ECOC   2012年

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    記述言語:英語  

    A strictly non-blocking 8×8 switch is realized on InP by using the phased-array scheme for the first time. We demonstrate nanoseconds reconfiguration time, ultra-broad optical bandwidth covering the entire C-band, and error-free transmission of 40-Gbps (10-Gbps × 4ch) WDM signal. © 2012 OSA.

    DOI: 10.1364/ECEOC.2012.Th.3.B.3

  • Light Trapping Structure with Backside Scatterer for Enhanced Photo-Absorption by Quantum Structures

    Kentaroh Watanabe, Boram Kim, Hassanet Sodabanlu, Masanao Goto, Keisuke Nakahyama, Shinya Hayashi, Masakazu Sugiyama, Kenjiro Miyano, Yoshiaki Nakano

    2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)   113 - 117   2012年 (   ISSN:0160-8371 )

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    記述言語:英語   出版者・発行元:IEEE  

    A strategy is demonstrated that maximizes the contribution of quantum structures for third-generation cells such as an intermediate-band cell: an optical cavity composed of (1) an optically-thin substrate in the absorption range of a quantum structure and (2) a backside scatterer that reflects light to the direction allowing total reflection. An InGaAs/GaAsP multiple quantum wells (MQWs) were used as an example of quantum structures and the effect of optical cavity was evaluated in terms of an enhancement in the external quantum efficiency (EQE) in the wavelength range 850-1000 nm. A PV cell using a semi-insulating GaAs substrate and front contact has been employed for proof of concept. Two kinds of backside scatterers were examined: a self-assembled array of Ag nanoparticles and a periodic groove texture by lithography and wet etching. Both the structures enhanced the EQE for the MQWs by approximately 20-30% and further enhancement is expected by improving the scattering efficiency and the use of an ultra-thin substrate with a light-scattering back contact.

    DOI: 10.1109/PVSC.2012.6317580

  • Non-Radiative Carrier Recombination Mechanism In The InGaAs/GaAsP Strain-Balanced Quantum Well Solar Cells With Different Number Of Stacks By Using a Piezoelectric Photothermal Method

    Atsuhiko Fukuyama, Yosuke Nakano, Taketo Aihara, Hiroaki Fujii, Masakazu Sugiyama, Yoshiaki Nakano, Tetsuo Ikari

    8TH INTERNATIONAL CONFERENCE ON CONCENTRATING PHOTOVOLTAIC SYSTEMS (CPV-8)   1477   185 - 188   2012年 (   ISSN:0094-243X )

     詳細

    記述言語:英語   出版者・発行元:AMER INST PHYSICS  

    To optimize the multiple quantum well (QW) structure of the strain-balanced InGaAs/GaAsP inserted into GaAs p-i-n solar cell, carrier escaping process from QW, carrier radiative and non-radiative recombination processes in QW were investigated by using surface photovoltage (SPV), photoluminescence (PL) and piezoelectric photothermal (PPT) spectroscopies, respectively. Distinctive peaks at 1.19 eV were observed for all spectra below the bandgap of GaAs substrate (1.42 eV) and concluded that the peak was arisen from the excitonic transitions associated between the 1st order subbband in QWs. Although the optical absorption intensity of this transition was proportional to the number of QW stacks, SPV and PPT signals showed saturation above the QW stacks of 20. Band diagram calculation showed that an entire region of 10-stacked QWs was located in the flat band potential area, whereas a part of 20-stacked QWs was placed in an internal electric field. It was then suggested that the potential barrier height of 20-stacked QWs is small than that of 10-stacked QW.

    DOI: 10.1063/1.4753864

  • Progress of InP monolithically integrated photonic circuits for switching and digital processing

    Yoshiaki Nakano, Takuo Tanemura

    Technical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012   230 - 231   2012年

     詳細

    記述言語:英語  

    We review our research on InP monolithically integrated photonic circuits for optical switching and digital processing applications. In particular, a 1x100 phased array optical switch circuit and a circuit consisting of an optical flip-flop and an optical gate are presented. © 2012 IEEE.

    DOI: 10.1109/OECC.2012.6276455

  • Photoluminescence of InGaAs Islands on Si (111) Substrate Grown using Micro-Channel Selective-Area MOVPE

    Y. Fujimoto, A. Higo, J. O. Kjellman, S. Watanabe, M. Sugiyama, Y. Nakano

    2012 INTERNATIONAL CONFERENCE ON OPTICAL MEMS AND NANOPHOTONICS (OMN)   200 - +   2012年 (   ISSN:2160-5033 )

     詳細

    記述言語:英語   出版者・発行元:IEEE  

    III-V hetero-integration on silicon is most attractive for lasers, SOAs, and detectors for silicon photonics. InGaAs disks on Si substrate have been grown using micro-channel selective-area metal-organic vapor phase epitaxy. We have measured the luminescent spectra by using the micro-photoluminescence systems and obtained broadband spectra in 1.3 - 2.1 mu m range, suitable for the telecom and the data-communication wavelength.

    DOI: 10.1109/OMEMS.2012.6318872

  • Open-Circuit-Voltage Enhancement Of The III-V Super-Lattice Solar Cells Under Optical Concentration

    Kentaroh Watanabe, Yunpeng Wang, Hassanet Sodabanlu, Shaojun Ma, Boram Kim, Masakazu Sugiyama, Yoshiaki Nakano

    8TH INTERNATIONAL CONFERENCE ON CONCENTRATING PHOTOVOLTAIC SYSTEMS (CPV-8)   1477   40 - 43   2012年 (   ISSN:0094-243X )

     詳細

    記述言語:英語   出版者・発行元:AMER INST PHYSICS  

    The GaAs single junction solar cell containing the nano-structure of multiple quantum wells (MQWs) or super-lattice (SL) consists of the InGaAs/GaAsP strain-balanced wells and barriers grown by MOVPE was evaluated under the concentrated illumination. Defining the concentration ratio C-J as a ratio of saturated current density ratio of under the concentrated illuminations versus 1SUN, the increasing dependency of open-circuit-voltage (V-OC) on C-J showed steeper tendency for only SL inserted sample then the conventional multiple quantum wells (MQWs) case. This result indicated that the carrier transport enhancement by tunneling effect by thinning each barriers contribute the V-OC increment at the high concentrated illumination.

    DOI: 10.1063/1.4753829

  • SOI platform and III-V integrated active photonic device by direct bonding for data communication

    Linghan Li, Akio Higo, Eiji Higurashi, Masakazu Sugiyama, Yoshiaki Nakano

    Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012   87   2012年 ( ISBN:9781467307420 )

     詳細

    The recent research progress of Si/III-V hetero-integration by Ar/O 2 plasma assisted direct bonding in air ambient was reported. The efficient current injection from SOI micro rib to InGaAsP active layer has been achieved. The InGaAsP MQW layer was bonded onto the SOI platform to realize several hetero-integrated active photonic devices such as a direct-current- pumped Fabry-Perot Laser and a waveguide photodiode. The Si/III-V Fabry-Perot Laser demonstrated cw operation under 5 0C with 75mA threshold current. The Si/III-V photodiode showed 65% quantum efficiency at 1550nm. © 2012 IEEE.

    DOI: 10.1109/LTB-3D.2012.6238055

  • 復興と防災の工学

    酒井 啓司, 中埜 良昭, 中野 義昭

    生産研究   64 ( 5 )   679 - 682   2012年 (   ISSN:0037-105X )

     詳細

    記述言語:日本語   出版者・発行元:Institute of Industrial Science The University of Tokyo  

    DOI: 10.11188/seisankenkyu.64.679

  • InGaAs/GaAsP歪補償量子井戸太陽電池におけるキャリア再結合損失過程の積層数依存性

    中野陽介, 相原健人, 藤井宏晶, 福山敦彦, 杉山正和, 中野義昭, 碇哲雄

    応用物理学会九州支部学術講演会講演予稿集   37   129   2011年11月

     詳細

    記述言語:日本語  

  • 結合モードDBRレーザを用いた光クロック同期全光フリップ・フロップの数値解析(超高速伝送・変復調・分散補償技術,超高速光信号処理技術,広帯域光増幅・WDM技術,受光デバイス,高光出力伝送技術,一般,(ECOC報告))

    財津 優, 肥後 昭男, 種村 拓夫, 中野 義昭

    電子情報通信学会技術研究報告. OCS, 光通信システム   111 ( 265 )   87 - 92   2011年10月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    デジタル光集積回路の実現にむけて,光クロック同期動作が可能な全光フリップ・フロップは必要不可欠な要素素子である.その動作を実現できる新たな構造として,我々は分布ブラッグ反射器(DBR)と過飽和吸収体を組み合わせた結合モードDBRレーザを提案している.素子が有するDBRがセット・リセット入力光を選択的に反射することで,強度歪みのないデジタルな出力波形が得られる.結合レート方程式に基づいた解析モデルを用いて,数値計算によって同素子の動作および特性を検証する.双安定性の解析によって同素子の双安定性を明らかにし,静的モード切換え動作を検証する.さらに動的動作の解析を行い,デジタルな出力波形を持った光クロック同期フリップ・フロップ動作を実証する.

  • 結合モードDBRレーザを用いた光クロック同期全光フリップ・フロップの数値解析

    財津優, 肥後昭男, 種村拓夫, 中野義昭

    電子情報通信学会技術研究報告   111 ( 265(OCS2011 54-94) )   87 - 92   2011年10月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    デジタル光集積回路の実現にむけて,光クロック同期動作が可能な全光フリップ・フロップは必要不可欠な要素素子である.その動作を実現できる新たな構造として,我々は分布ブラッグ反射器(DBR)と過飽和吸収体を組み合わせた結合モードDBRレーザを提案している.素子が有するDBRがセット・リセット入力光を選択的に反射することで,強度歪みのないデジタルな出力波形が得られる.結合レート方程式に基づいた解析モデルを用いて,数値計算によって同素子の動作および特性を検証する.双安定性の解析によって同素子の双安定性を明らかにし,静的モード切換え動作を検証する.さらに動的動作の解析を行い,デジタルな出力波形を持った光クロック同期フリップ・フロップ動作を実証する.

  • 結合モードDBRレーザを用いた光クロック同期全光フリップ・フロップの数値解析(超高速伝送・変復調・分散補償技術,超高速光信号処理技術,広帯域光増幅・WDM技術,受光デバイス,高光出力伝送技術,一般,(ECOC報告))

    財津 優, 肥後 昭男, 種村 拓夫, 中野 義昭

    電子情報通信学会技術研究報告. OPE, 光エレクトロニクス   111 ( 266 )   87 - 92   2011年10月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    デジタル光集積回路の実現にむけて,光クロック同期動作が可能な全光フリップ・フロップは必要不可欠な要素素子である.その動作を実現できる新たな構造として,我々は分布ブラッグ反射器(DBR)と過飽和吸収体を組み合わせた結合モードDBRレーザを提案している.素子が有するDBRがセット・リセット入力光を選択的に反射することで,強度歪みのないデジタルな出力波形が得られる.結合レート方程式に基づいた解析モデルを用いて,数値計算によって同素子の動作および特性を検証する.双安定性の解析によって同素子の双安定性を明らかにし,静的モード切換え動作を検証する.さらに動的動作の解析を行い,デジタルな出力波形を持った光クロック同期フリップ・フロップ動作を実証する.

  • 結合モードDBRレーザを用いた光クロック同期全光フリップ・フロップの数値解析(超高速伝送・変復調・分散補償技術,超高速光信号処理技術,広帯域光増幅・WDM技術,受光デバイス,高光出力伝送技術,一般,(ECOC報告))

    財津 優, 肥後 昭男, 種村 拓夫, 中野 義昭

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   111 ( 267 )   87 - 92   2011年10月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    デジタル光集積回路の実現にむけて,光クロック同期動作が可能な全光フリップ・フロップは必要不可欠な要素素子である.その動作を実現できる新たな構造として,我々は分布ブラッグ反射器(DBR)と過飽和吸収体を組み合わせた結合モードDBRレーザを提案している.素子が有するDBRがセット・リセット入力光を選択的に反射することで,強度歪みのないデジタルな出力波形が得られる.結合レート方程式に基づいた解析モデルを用いて,数値計算によって同素子の動作および特性を検証する.双安定性の解析によって同素子の双安定性を明らかにし,静的モード切換え動作を検証する.さらに動的動作の解析を行い,デジタルな出力波形を持った光クロック同期フリップ・フロップ動作を実証する.

  • Intersubband absorption saturation in AlN-based waveguide with GaN/AlN multiple quantum wells grown by metalorganic vapor phase epitaxy

    Hassanet Sodabanlu, Jung Seung Yang, Takuo Tanemura, Masakazu Sugiyama, Masakazu Sugiyama, Yukihiro Shimogaki, Yoshiaki Nakano, Yoshiaki Nakano

    Applied Physics Letters   99   2011年10月 (   ISSN:0003-6951 )

     詳細

    Intersubband absorption saturation at 1.57 m wavelength was observed in a 400-m long Si3N4-rib AlN-based waveguide with GaN/AlN multiple quantum wells (MQWs) fabricated by metalorganic vapor phase epitaxy (MOVPE). The self-saturation measurement was employed using a 1.56-m short pulse laser which has a temporal width of 0.4 ps (full-width at half-maximum) and a repetition rate of 63 MHz. An intersubband absorption saturation by 5 dB was achieved using a pulse energy of 115 pJ. We have demonstrated the capability of MOVPE-grown GaN/AlN MQWs for intersubband optical devices operated at communication wavelength. © 2011 American Institute of Physics.

    DOI: 10.1063/1.3650929

  • 波長依存ナノワイヤグリッド偏光板による可変色カラーピクセル

    肥後昭男, LEE Taelim, 丸山智史, 藤田博之, 中野義昭, 年吉洋

    センサ・マイクロマシンと応用システムシンポジウム(CD-ROM)   28th   ROMBUNNO.D1-3   2011年9月

     詳細

    記述言語:日本語  

  • C-3-42 ビーム曲折型1xN光スイッチの部分エッチングによるクロストーク低減(光スイッチ,C-3.光エレクトロニクス,一般セッション)

    崔 洙赫, 財津 優, 肥後 昭男, 種村 拓夫, 中野 義昭

    電子情報通信学会ソサイエティ大会講演論文集   2011 ( 1 )   164 - 164   2011年8月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • C-3-14 光集積回路におけるInGaAsP/InP偏波コンバータの作製(導波路デバイス(I),C-3.光エレクトロニクス,一般セッション)

    大和 文彦, 財津 優, 肥後 昭男, 種村 拓夫, 中野 義昭

    電子情報通信学会ソサイエティ大会講演論文集   2011 ( 1 )   136 - 136   2011年8月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • C-3-73 フェーズアレイ1×8集積光スイッチと石英系PLC遅延回路を用いた小型光バッファ(光ファイバー・光メモリ(II),C-3.光エレクトロニクス,一般セッション)

    郭 命俊, 橋詰 泰彰, 美野 真司, 財津 優, 種村 拓夫, 中野 義昭

    電子情報通信学会ソサイエティ大会講演論文集   2011 ( 1 )   195 - 195   2011年8月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • GaAs/InGaAs緩衝層を用いたInGaAs/GaAsP多重量子井戸の成長

    藤井宏昌, WANG Yunpeng, 杉山正和, 中野義昭

    応用物理学会学術講演会講演予稿集(CD-ROM)   72nd   ROMBUNNO.31A-ZA-14   2011年8月

     詳細

    記述言語:日本語  

  • InGaAs/GaAsP歪補償量子井戸太陽電池吸収層でのキャリア再結合損失評価

    相原健人, 福山敦彦, WANG Y, 杉山正和, 中野義昭, 碇哲雄

    応用物理学会学術講演会講演予稿集(CD-ROM)   72nd   ROMBUNNO.1A-H-8   2011年8月

     詳細

    記述言語:日本語  

  • MOVPE法によるInGaN/AlN多重量子井戸の結晶成長および評価

    穴澤風彦, HASSANET Sodabanlu, 藤井克司, 中野義昭, 杉山正和

    応用物理学会学術講演会講演予稿集(CD-ROM)   72nd   ROMBUNNO.31A-ZE-8   2011年8月

     詳細

    記述言語:日本語  

  • 基板貼り合わせ法を用いたIII‐V/Ge CMOSトランジスタ集積化

    横山正史, KIM Sanghyeon, ZHANG Rui, 田岡紀之, 卜部友二, 前田辰郎, 高木秀樹, 安田哲二, 山田永, 市川磨, 福原昇, 秦雅彦, 杉山正和, 中野義昭, 竹中充, 高木信一

    応用物理学会学術講演会講演予稿集(CD-ROM)   72nd   ROMBUNNO.1A-P7-7   2011年8月

     詳細

    記述言語:日本語  

  • 結合モードDBRレーザを用いた緩和振動低減全光フリップ・フロップ動作

    財津優, 肥後昭男, 種村拓夫, 中野義昭

    応用物理学会学術講演会講演予稿集(CD-ROM)   72nd   ROMBUNNO.31A-ZN-8   2011年8月

     詳細

    記述言語:日本語  

  • 集光錐と光キャビティによる集光型太陽電池用2次光学素子の検討

    渡辺健太郎, 渡邊良祐, 杉山正和, 宮野健次郎, 中野義昭

    応用物理学会学術講演会講演予稿集(CD-ROM)   72nd   ROMBUNNO.1A-H-3   2011年8月

     詳細

    記述言語:日本語  

  • InxGa(1-x)PのMOVPEにおけるその場曲率観察による組成決定の手法

    渡辺健太郎, HASSANET Sodabandu, 馬少駿, 杉山正和, 中野義昭

    化学工学会秋季大会研究発表講演要旨集(CD-ROM)   43rd   ROMBUNNO.U217   2011年8月

     詳細

    記述言語:日本語  

  • 高効率太陽電池用InGaAs/GaAsP超格子のMOVPEにおけるヘテロ界面制御

    杉山正和, 王云鵬, 渡辺健太郎, 中野義昭

    化学工学会秋季大会研究発表講演要旨集(CD-ROM)   43rd   ROMBUNNO.U215   2011年8月

     詳細

    記述言語:日本語  

  • High-temperature annealing effect of Si in group-V ambient prior to heteroepitaxy of InAs in metal-organic vapor phase epitaxy

    Momoko Deura, Yoshiyuki Kondo, Mitsuru Takenaka, Shinichi Takagi, Yukihiro Shimogaki, Yoshiaki Nakano, Yoshiaki Nakano, Masakazu Sugiyama, Masakazu Sugiyama

    Japanese Journal of Applied Physics   50   2011年4月 (   ISSN:0021-4922 )

     詳細

    We investigated the state of the Si(111) surface and its effect on InAs growth after annealing at high temperature with and without an As or P source flow in H2 ambient in metal-organic vapor phase epitaxy (MOVPE). In multi-step growth of InGaAs by micro-channel selective-area growth, perfect coverage of Si growth areas by InAs, which is grown first, by controlling the state of the Si surface is critical for the following InGaAs lateral growth. Although both As and P sources protect the surface against contamination from inside the reactor, annealing with the P source at high temperature is optimal in terms of InAs nucleation and coverage of growth areas by InAs. The amount of O contamination after P annealing at high temperature was significantly lower than that under other annealing conditions. Therefore, O is the most critical contamination in InAs nucleation. © 2011 The Japan Society of Applied Physics.

    DOI: 10.1143/JJAP.50.04DH07

  • ALD Al2O3を用いたIII‐V CMOS Photonics用貼り合わせ基板の特性改善

    一宮佑希, 横山正史, 飯田亮, 杉山正和, 中野義昭, 竹中充, 高木信一

    応用物理学関係連合講演会講演予稿集(CD-ROM)   58th   ROMBUNNO.26P-KB-12   2011年3月

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    記述言語:日本語  

  • ICTと環境エネルギーデバイス

    中野 義昭

    応用物理学会学術講演会講演予稿集   2011.1   343 - 343   2011年3月 (     eISSN:2436-7613 )

     詳細

    記述言語:日本語   出版者・発行元:公益社団法人 応用物理学会  

    DOI: 10.11470/jsapmeeting.2011.1.0_343

  • InGaAs/GaAsP歪補償量子井戸太陽電池吸収層でのキャリア再結合損失評価

    相原健人, 福山敦彦, WANG Y, 杉山正和, 中野義昭, 碇哲雄

    応用物理学関係連合講演会講演予稿集(CD-ROM)   58th   ROMBUNNO.24P-BU-2   2011年3月

     詳細

    記述言語:日本語  

  • InxGa(1-x)PのMOVPEにおけるin situ曲率観察による組成決定

    渡辺健太郎, SODABANLU H, MA S. J, 杉山正和, 中野義昭

    応用物理学関係連合講演会講演予稿集(CD-ROM)   58th   ROMBUNNO.25A-BQ-3   2011年3月

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    記述言語:日本語  

  • SiO2微小粒子の自己配列を利用した3次元反射防止誘電体構造

    浜本寧, 渡辺健太郎, 杉山正和, 肥後昭男, 中野義昭

    応用物理学関係連合講演会講演予稿集(CD-ROM)   58th   ROMBUNNO.24P-BU-12   2011年3月

     詳細

    記述言語:日本語  

  • ナノ粒子配列を用いた微細加工Si(111)基板上のGaN MOVPE

    田中肇, SODABANLU Hassanet, 肥後昭男, 中野義昭, 杉山正和

    応用物理学関係連合講演会講演予稿集(CD-ROM)   58th   ROMBUNNO.26A-BY-10   2011年3月

     詳細

    記述言語:日本語  

  • 波長0.7μm~2.3μmに対応した多成分用レーザ式ガス分析計

    東亮一, 東亮一, 平山紀友, 種村拓夫, 中野義昭

    応用物理学関係連合講演会講演予稿集(CD-ROM)   58th   ROMBUNNO.24P-KF-7   2011年3月

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    記述言語:日本語  

  • 気相ドーピング法を用いたGeフォトディテクターの暗電流低減

    竹中充, 森井清仁, 杉山正和, 中野義昭, 高木信一

    応用物理学関係連合講演会講演予稿集(CD-ROM)   58th   ROMBUNNO.24P-KB-5   2011年3月

     詳細

    記述言語:日本語  

  • 薄膜BOX層を有する膜厚10nm以下の極薄膜InGaAs‐OI MOSFET

    横山正史, 飯田亮, KIM Sanghyeon, 田岡紀之, 卜部友二, 安田哲二, 高木秀樹, 山田永, 福原昇, 秦雅彦, 杉山正和, 中野義昭, 竹中充, 高木信一

    応用物理学関係連合講演会講演予稿集(CD-ROM)   58th   ROMBUNNO.26A-KD-5   2011年3月

     詳細

    記述言語:日本語  

  • 結合DBRレーザを用いた光クロック同期全光フリップ・フロップ

    財津優, 肥後昭男, 種村拓夫, 中野義昭

    応用物理学関係連合講演会講演予稿集(CD-ROM)   58th   ROMBUNNO.24P-KA-12   2011年3月

     詳細

    記述言語:日本語  

  • 集光応用を目指したIII‐Vモノリシック集積直列接続太陽電池の試作

    山田雄吾, 渡辺健太郎, 肥後昭男, 杉山正和, 中野義昭

    応用物理学関係連合講演会講演予稿集(CD-ROM)   58th   ROMBUNNO.24P-BU-3   2011年3月

     詳細

    記述言語:日本語  

  • III‐V太陽電池のための広帯域サブ波長反射防止構造の設計と試作

    肥後昭男, 渡辺健太郎, 杉山正和, 中野義昭

    電気学会全国大会講演論文集   2011 ( 3 )   192   2011年3月

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    記述言語:日本語  

  • Fabrication of n-type GaN layers by the pulse injection method at 950°C for intersubband devices

    Jung Seung Yang, Hassanet Sodabanlu, Masakazu Sugiyama, Masakazu Sugiyama, Yoshiaki Nakano, Yoshiaki Nakano, Yukihiro Shimogaki

    Electrochemical and Solid-State Letters   14   2011年2月 (   ISSN:1099-0062 )

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    n-type GaN layers were grown at 950C by metallorganic vapor-phase epitaxy using a pulse injection (PI) method. Carrier densities of 1.6 1019 cm-3 and atomically flat surfaces were realized at 950C by decreasing the partial pressure of trimethylgallium (TMGa) to enhance the surface migration of Ga-species and reduce carbon incorporation. The intersubband transition (ISBT) in AlN/GaN multiquantum wells was first appeared using the PI method, and the ISBT properties were much improved compared to those of MQWs grown by the conventional method. This improvement was due to the improved interface abruptness and layer uniformity. © 2011 The Electrochemical Society.

    DOI: 10.1149/1.3533660

  • フェーズアレイとSOAを用いたモノリシック集積1×100光スイッチ

    ソーアンジ イブラーヒム・ムラット, 種村 拓夫, 武田 浩司, 財津 優, 竹中 充, 中野 義昭

    電気学会研究会資料. EMT, 電磁界理論研究会   2011 ( 1 )   93 - 97   2011年1月

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    記述言語:英語  

  • フェーズアレイとSOAを用いたモノリシック集積1×100光スイッチ(一般,フォトニックNW・デバイス,フォトニック結晶・ファイバとその応用,光集積回路,光導波路素子,光スイッチング,導波路解析,一般)

    ソーアンジ イブラーヒム・ムラット, 種村 拓夫, 武田 浩司, 財津 優, 竹中 充, 中野 義昭

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   110 ( 396 )   93 - 97   2011年1月 (   ISSN:0913-5685 )

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    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    1×100高速光スイッチング機能を持つInP光集積回路を作製したので報告する.本素子は,2段フェーズアレイ型光スイッチと半導体増幅器(SOA)アレイを縦続接続した構成を取り,計135個の位相シフタ,100個のSOA,22個のスターカプラ,および,数100本のパッシブ光導波路をオフセット量子井戸手法によりモノリシック集積している.10Gbpsにおいて1dB以下のパワーペナルティ,50dB以上の消光比など,基本特性を実証した.

  • フェーズアレイとSOAを用いたモノリシック集積1×100光スイッチ(一般,フォトニックNW・デバイス,フォトニック結晶・ファイバとその応用,光集積回路,光導波路素子,光スイッチング,導波路解析,一般)

    ソーアンジ イブラーヒム・ムラット, 種村 拓夫, 武田 浩司, 財津 優, 竹中 充, 中野 義昭

    電子情報通信学会技術研究報告. PN, フォトニックネットワーク   110 ( 394 )   93 - 97   2011年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    1×100高速光スイッチング機能を持つInP光集積回路を作製したので報告する.本素子は,2段フェーズアレイ型光スイッチと半導体増幅器(SOA)アレイを縦続接続した構成を取り,計135個の位相シフタ,100個のSOA,22個のスターカプラ,および,数100本のパッシブ光導波路をオフセット量子井戸手法によりモノリシック集積している.10Gbpsにおいて1dB以下のパワーペナルティ,50dB以上の消光比など,基本特性を実証した.

  • フェーズアレイとSOAを用いたモノリシック集積1×100光スイッチ(一般,フォトニックNW・デバイス,フォトニック結晶・ファイバとその応用,光集積回路,光導波路素子,光スイッチング,導波路解析,一般)

    ソーアンジ イブラーヒム・ムラット, 種村 拓夫, 武田 浩司, 財津 優, 竹中 充, 中野 義昭

    電子情報通信学会技術研究報告. OPE, 光エレクトロニクス   110 ( 395 )   93 - 97   2011年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    1×100高速光スイッチング機能を持つInP光集積回路を作製したので報告する.本素子は,2段フェーズアレイ型光スイッチと半導体増幅器(SOA)アレイを縦続接続した構成を取り,計135個の位相シフタ,100個のSOA,22個のスターカプラ,および,数100本のパッシブ光導波路をオフセット量子井戸手法によりモノリシック集積している.10Gbpsにおいて1dB以下のパワーペナルティ,50dB以上の消光比など,基本特性を実証した.

  • Characterization of indium segregation in metalorganic vapor phase epitaxy-grown InGaP by schottky barrier height measurement

    Osamu Ichikawa, Osamu Ichikawa, Noboru Fukuhara, Noboru Fukuhara, Masahiko Hata, Masahiko Hata, Takayuki Nakano, Takayuki Nakano, Masakazu Sugiyama, Masakazu Sugiyama, Yoshiaki Nakano, Yoshiaki Nakano, Yukihiro Shimogaki, Yukihiro Shimogaki

    Japanese Journal of Applied Physics   50   2011年1月 (   ISSN:0021-4922 )

     詳細

    Surface/interface segregation of indium in InGaP layers grown by metalorganic vapor phase epitaxy has been studied. Al/InGaP Schottky barrier height (θB) measurement was used for the evaluation of the segregation. It is shown that B of GaAs/InGaP/GaAs double heterostructure (DH) is larger than that of InGaP/GaAs single heterostructure (SH), suggesting the diffusion of indium into upper GaAs layer. It is shown that the indium segregation progresses at the initial stage of InGaP growth and saturates when the InGaP thickness reaches about 15 nm. Using the segregation model, we calculated the exchange coefficient of indium as 0.76 at 620 °C. © 2011 The Japan Society of Applied Physics.

    DOI: 10.1143/JJAP.50.011201

  • Intersubband transition at 1.55 μm in AlN/GaN multiple quantum wells by metal organic vapor phase epitaxy using the pulse injection method at 770 °C

    Jung Seung Yang, Hassanet Sodabanlu, Masakazu Sugiyama, Masakazu Sugiyama, Yoshiaki Nakano, Yoshiaki Nakano, Yukihiro Shimogaki

    Journal of Crystal Growth   314   252 - 257   2011年1月 (   ISSN:0022-0248 )

     詳細

    Intersubband transition (ISBT) at 1.55 μm in AlN/GaN multi quantum wells (MQWs) was realized by metal organic vapor phase epitaxy (MOVPE) using the pulse injection (PI) method to grow GaN well layers at 770 °C. It was shown that a main factor for shifting ISBT wavelength to shorter region to cover 1.55 μm and improving ISBT properties of MQWs is the growth temperature of MQWs. Best structural and ISBT properties are observed at low growth temperature of 770 °C in this study. Carbon incorporation level in GaN layer grown by the PI method (PI-GaN) showed one order smaller value compared with that by the conventional continuous method. Moreover, further decrease in growth temperature to 770 °C did not show significant increase in carbon incorporation in PI-GaN layer. It clearly indicates that the PI method is very effective in reducing carbon concentration in GaN layer, especially at low temperature region. The low carbon concentration of 4×1018 cm-3 released by the PI method was indispensable for realizing enough carrier concentration of 1.6×1019 cm-3 to achieve strong ISBT at 1.55 μm. © 2010 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jcrysgro.2010.10.034

  • Post and In Situ Characterization of Strain Control and Crystal Quality in Quantum Well Solar Cell Structure

    Y. P. Wang, M. Deura, M. Sugiyama, Y. Nakano

    Materials Science Forum   655-677   73 - 76   2011年

  • タンデム型太陽電池の高効率化へ向けた量子井戸構造の開発

    渡辺健太郎, 王云鵬, SODABANLU, Hassanet, 文楡, 馬少駿, 劉才, 藤井宏昌, BORAM Kim, 瀬能未奈都, 杉山正和, 中野義昭

    薄膜太陽電池セミナー   3rd   68   2011年

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    記述言語:日本語  

  • インラインパワーモニタを集積したInP 1x8フェーズアレイ光スイッチ

    小山智史, SOGANSCI Ibrahim Murat, 種村拓夫, 中野義昭

    電子情報通信学会技術研究報告   110 ( 431(PN2010 54-81) )   81 - 84   2011年 (   ISSN:0913-5685 )

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    記述言語:英語  

  • インラインパワーモニタを集積したInP 1x8フェーズアレイ光スイッチ(フォトニックネットワーク関連技術,一般)

    小山 智史, ソーアンジ イブラーヒム ムラット, 種村 拓夫, 中野 義昭

    電子情報通信学会技術研究報告. PN, フォトニックネットワーク   110 ( 431 )   81 - 84   2011年 (   ISSN:0913-5685 )

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    低損失なインラインパワーモニタをモノリシック集積したInP1x8フェーズアレイ光スイッチを作製した。パワーモニタで検出された光電流は実際の光強度によく対応していることが確認できた。スイッチの各出力ポートに集積したパワーモニタからのフィードバック信号によりオンチップでスイッチング条件の最適化を行うことに成功した。

  • 日本のものづくり-世界のトップを走り続けるために-

    酒井 啓司, 野城 智也, 中野 義昭

    生産研究   63 ( 5 )   589 - 592   2011年 (   ISSN:0037-105X )

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    出版者・発行元:Institute of Industrial Science The University of Tokyo  

    DOI: 10.11188/seisankenkyu.63.589

  • 科学技術・研究開発の国際比較 2011年版 電子情報通信分野

    桜井貴康, 木本恒暢, 嘉田守宏, 黒田忠広, 染谷隆夫, 竹内健, 平本俊郎, 原和裕, 藤田昌宏, 松澤昭, 最上徹, 安浦寛人, 伊東義曜, 中野義昭, 伊藤雅英, 井元信之, 小柴正則, 後藤顕也, 小山理, 進藤典男, 馬場俊彦, 桃井恒浩, 宮本裕, 石塚満, 相澤清晴, 上田和紀, 尾内理紀夫, 喜連川優, 坂井修一, 高木英明, 近山隆, 辻井潤一, 平木敬, 本位田真一, 古原和邦, 井沼学, 今福健太郎, 衛藤将史, 光来健一, 須崎有康

    科学技術・研究開発の国際比較 2011年版 電子情報通信分野   197P   2011年

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    記述言語:日本語  

  • Monolithically integrated InGaN-based multicolor light-emitting diodes fabricated by wide-stripe selective area metal-organic vapor phase epitaxy

    Tomonari Shioda, Tomonari Shioda, Masakazu Sugiyama, Yukihiro Shimogaki, Yoshiaki Nakano, Yoshiaki Nakano

    Applied Physics Express   3   2010年9月 (   ISSN:1882-0778 )

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    We have demonstrated monolithic integration of multicolor light-emitting diodes (LEDs) by selective-area metalorganic vapor phase epitaxy (SAMOVPE). The use of relatively wide (&gt;30 μm) masks resulted in a large in-plane modulation of both InGaN layer thickness and composition, allowing us a wide range of wavelength modulation. A wider mask shifted the electroluminescence spectrum to longer wavelengths due to vaporphase diffusion of precursors. LED elements were formed at the center of the 60-μm-wide growth area, the peak wavelength of which covered 454-545nm around turn-on voltages and 454-485nm under a high-injection condition. © 2010 The Japan Society of Applied Physics.

    DOI: 10.1143/APEX.3.092104

  • 基調講演 ソーラークエスト--太陽光エネルギー利用の未来を拓く国際研究拠点 (特集 駒場リサーチオープンキャンパス公開)

    中野 義昭

    生産研究   62 ( 5 )   457 - 460   2010年9月 (   ISSN:0037-105X )

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    記述言語:日本語   出版者・発行元:東京大学生産技術研究所  

  • B-12-11 フェーズアレイ1×16集積光スイッチと小型ファイバ遅延線を用いた可変光バッファ(B-12.フォトニックネットワーク,一般セッション)

    小山 智史, ソーアンジ イブラーヒム・ムラット, 大山 貴晴, 美野 真司, 種村 拓夫, 中野 義昭

    電子情報通信学会ソサイエティ大会講演論文集   2010 ( 2 )   301 - 301   2010年8月

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • Al2O3埋め込み酸化膜とS処理によるIII‐V‐OI MOSFETの電子移動度に対するチャネル膜厚依存性の改善

    横山正史, 山田永, 安田哲二, 高木秀樹, 卜部友二, 宮田典幸, 福原昇, 秦雅彦, 杉山正和, 中野義昭, 竹中充, 高木信一

    応用物理学会学術講演会講演予稿集(CD-ROM)   71st   ROMBUNNO.16A-ZE-7   2010年8月

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    記述言語:日本語  

  • III‐V CMOS photonicsプラットフォーム実現に向けたグレーティングカプラの作製

    竹中充, 横山正史, 杉山正和, 中野義昭, 高木信一

    応用物理学会学術講演会講演予稿集(CD-ROM)   71st   ROMBUNNO.14P-G-17   2010年8月

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    記述言語:日本語  

  • MOVPEで作製したInGaAs/GaAsP歪み補償超格子におけるヘテロ界面急峻化の検証

    杉山正和, WANG Yunpeng, 中野義昭

    応用物理学会学術講演会講演予稿集(CD-ROM)   71st   ROMBUNNO.16A-ZV-6   2010年8月

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    記述言語:日本語  

  • ピラミッド上半極性面InGaN/GaN多重量子井戸の気相拡散に基づく発光波長変調

    藤原達記, 中野義昭, 杉山正和

    応用物理学会学術講演会講演予稿集(CD-ROM)   71st   ROMBUNNO.15A-C-7   2010年8月

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    記述言語:日本語  

  • 光クロック信号に同期した全光フリップ・フロップ動作の数値解析

    財津優, 肥後昭男, 種村拓夫, 中野義昭

    応用物理学会学術講演会講演予稿集(CD-ROM)   71st   ROMBUNNO.14P-G-6   2010年8月

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    記述言語:日本語  

  • 半導体集積光制御デバイスの研究動向と展望

    中野義昭

    応用物理学会学術講演会講演予稿集(CD-ROM)   71st   ROMBUNNO.14P-G-1 - 901   2010年8月 (     eISSN:2436-7613 )

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    記述言語:日本語   出版者・発行元:公益社団法人 応用物理学会  

    DOI: 10.11470/jsapmeeting.2010.2.0_901

  • 微小領域選択MOVPEを用いたSi上InAs成長の基板表面処理条件依存性

    出浦桃子, 近藤佳幸, 竹中充, 高木信一, 中野義昭, 杉山正和

    応用物理学会学術講演会講演予稿集(CD-ROM)   71st   ROMBUNNO.16A-ZV-8   2010年8月

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    記述言語:日本語  

  • 微小領域選択MOVPEにおけるSi(111)選択成長領域のInAsによる完全被覆とInGaAs横方向成長への影響

    近藤佳幸, 出浦桃子, 竹中充, 高木信一, 中野義昭, 杉山正和

    応用物理学会学術講演会講演予稿集(CD-ROM)   71st   ROMBUNNO.16A-ZV-7   2010年8月

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    記述言語:日本語  

  • 高原料効率MOVPEにより作製したGaAs太陽電池における不純物の影響

    鬼塚隆祐, 杉山正和, 中野義昭

    応用物理学会学術講演会講演予稿集(CD-ROM)   71st   ROMBUNNO.16A-ZV-4   2010年8月

     詳細

    記述言語:日本語  

  • Examination of intermediate species in GaN metal-organic vapor-phase epitaxy by selective-area growth

    Masakazu Sugiyama, Masakazu Sugiyama, Satoshi Yasukochi, Tomonari Shioda, Yukihiro Shimogaki, Yoshiaki Nakano

    Physica Status Solidi (C) Current Topics in Solid State Physics   7   2085 - 2087   2010年8月 (   ISSN:1862-6351 )

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    The major reactive intermediate species of GaN has been deduced and its surface reaction rate constant has been obtained through the analysis of multi-scale growth-rate profiles both in the reactor-scale and in the micrometer-scale that were obtained by selective-area growth. Usually, it is difficult to explore surface reaction kinetics, especially for metal-organic vapour phase epitaxy (MOVPE), because of mass-transfer-limited kinetics. This multi-scale analysis, however, has clarified that a single precursor, a gas-phase reaction product between (CH3)3Ga and NH 3, leads to the growth of GaN with a surface reaction probability of approximately 0.4 at 1400 K which is a typical growth temperature of GaN. Contribution of higher-order polymers was not significant in growth rate, but they seemed to be a cause of degraded surface morphology. A lumped reaction model of GaN MOVPE was proposed that led to reasonable agreement between a simulated growth-rate profile in the reactor-scale and a corresponding measured profile, which would lead to improved design of reactors and growth conditions. © 2010 Wiley-VCH Verlag GmbH &amp; Co. KGaA.

    DOI: 10.1002/pssc.200983559

  • 高性能光電子集積回路実現に向けたIII‐V CMOSプラットフォーム技術

    竹中充, 横山正史, 杉山正和, 中野義昭, 高木信一

    電子情報通信学会技術研究報告   110 ( 181(LQE2010 24-60) )   45 - 48   2010年8月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    III-V-on-Insulator (III-V-OI)構造を利用した超小型InP系光素子とIII-V CMOSトランジスタをモノリシック集積可能なIII-V CMOS photonicsプラットフォーム技術を提案する。熱酸化Si基板とInGaAsP/InP基板を直接接合することでIII-V-OI基板を実現することに成功した。このSi上III-V-OI基板を用いたInGaAsP細線導波路において、曲率半径5μmにおいても低損失なベンド導波路を実現することに成功した。また同様に細線導波路を用いて、InP系アレイ導波路グレーティング(AWG)の超小型化を実現した。チャンネル間隔600GHzの4チャンネルAWGにおいて、素子サイズを147×92μm^2まで小型化することに成功した。

  • 高性能光電子集積回路実現に向けたIII-V CMOSプラットフォーム技術(光部品・電子デバイス実装技術,一般)

    竹中 充, 横山 正史, 杉山 正和, 中野 義昭, 高木 信一

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   110 ( 181 )   45 - 48   2010年8月 (   ISSN:0913-5685 )

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    III-V-on-Insulator (III-V-OI)構造を利用した超小型InP系光素子とIII-V CMOSトランジスタをモノリシック集積可能なIII-V CMOS photonicsプラットフォーム技術を提案する。熱酸化Si基板とInGaAsP/InP基板を直接接合することでIII-V-OI基板を実現することに成功した。このSi上III-V-OI基板を用いたInGaAsP細線導波路において、曲率半径5μmにおいても低損失なベンド導波路を実現することに成功した。また同様に細線導波路を用いて、InP系アレイ導波路グレーティング(AWG)の超小型化を実現した。チャンネル間隔600GHzの4チャンネルAWGにおいて、素子サイズを147×92μm^2まで小型化することに成功した。

  • 高性能光電子集積回路実現に向けたIII-V CMOSプラットフォーム技術(光部品・電子デバイス実装技術,一般)

    竹中 充, 横山 正史, 杉山 正和, 中野 義昭, 高木 信一

    電子情報通信学会技術研究報告. EMD, 機構デバイス   110 ( 178 )   45 - 48   2010年8月 (   ISSN:0913-5685 )

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    III-V-on-Insulator (III-V-OI)構造を利用した超小型InP系光素子とIII-V CMOSトランジスタをモノリシック集積可能なIII-V CMOS photonicsプラットフォーム技術を提案する。熱酸化Si基板とInGaAsP/InP基板を直接接合することでIII-V-OI基板を実現することに成功した。このSi上III-V-OI基板を用いたInGaAsP細線導波路において、曲率半径5μmにおいても低損失なベンド導波路を実現することに成功した。また同様に細線導波路を用いて、InP系アレイ導波路グレーティング(AWG)の超小型化を実現した。チャンネル間隔600GHzの4チャンネルAWGにおいて、素子サイズを147×92μm^2まで小型化することに成功した。

  • 高性能光電子集積回路実現に向けたIII-V CMOSプラットフォーム技術(光部品・電子デバイス実装技術,一般)

    竹中 充, 横山 正史, 杉山 正和, 中野 義昭, 高木 信一

    電子情報通信学会技術研究報告. OPE, 光エレクトロニクス   110 ( 180 )   45 - 48   2010年8月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    III-V-on-Insulator (III-V-OI)構造を利用した超小型InP系光素子とIII-V CMOSトランジスタをモノリシック集積可能なIII-V CMOS photonicsプラットフォーム技術を提案する。熱酸化Si基板とInGaAsP/InP基板を直接接合することでIII-V-OI基板を実現することに成功した。このSi上III-V-OI基板を用いたInGaAsP細線導波路において、曲率半径5μmにおいても低損失なベンド導波路を実現することに成功した。また同様に細線導波路を用いて、InP系アレイ導波路グレーティング(AWG)の超小型化を実現した。チャンネル間隔600GHzの4チャンネルAWGにおいて、素子サイズを147×92μm^2まで小型化することに成功した。

  • 高性能光電子集積回路実現に向けたIII-V CMOSプラットフォーム技術(光部品・電子デバイス実装技術,一般)

    竹中 充, 横山 正史, 杉山 正和, 中野 義昭, 高木 信一

    電子情報通信学会技術研究報告. CPM, 電子部品・材料   110 ( 179 )   45 - 48   2010年8月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    III-V-on-Insulator (III-V-OI)構造を利用した超小型InP系光素子とIII-V CMOSトランジスタをモノリシック集積可能なIII-V CMOS photonicsプラットフォーム技術を提案する。熱酸化Si基板とInGaAsP/InP基板を直接接合することでIII-V-OI基板を実現することに成功した。このSi上III-V-OI基板を用いたInGaAsP細線導波路において、曲率半径5μmにおいても低損失なベンド導波路を実現することに成功した。また同様に細線導波路を用いて、InP系アレイ導波路グレーティング(AWG)の超小型化を実現した。チャンネル間隔600GHzの4チャンネルAWGにおいて、素子サイズを147×92μm^2まで小型化することに成功した。

  • 大型反応器でのGaAs選択MOVPE成長の解析と制御

    前代武瑠, 市川磨, 秦雅彦, 杉山正和, 中野義昭, 霜垣幸浩

    化学工学会秋季大会研究発表講演要旨集(CD-ROM)   42nd   ROMBUNNO.N322 - 559   2010年8月

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    記述言語:日本語   出版者・発行元:公益社団法人 化学工学会  

    DOI: 10.11491/scej.2010f.0.559.0

  • 成長領域狭窄化選択MOVPEによるSi上InGaAsの高横/縦比成長

    近藤佳幸, 出浦桃子, 竹中充, 高木信一, 中野義昭, 杉山正和

    化学工学会秋季大会研究発表講演要旨集(CD-ROM)   42nd   ROMBUNNO.N321 - 558   2010年8月

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    記述言語:日本語   出版者・発行元:公益社団法人 化学工学会  

    DOI: 10.11491/scej.2010f.0.558.0

  • 微小領域選択MOVPEを用いたSi上InGaAsの形状均一化に向けたSi表面状態とInAs成長の関係

    出浦桃子, 近藤佳幸, 竹中充, 高木信一, 霜垣幸浩, 中野義昭, 杉山正和

    化学工学会秋季大会研究発表講演要旨集(CD-ROM)   42nd   ROMBUNNO.N320 - 557   2010年8月

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    記述言語:日本語   出版者・発行元:公益社団法人 化学工学会  

    DOI: 10.11491/scej.2010f.0.557.0

  • 高原料効率GaAs‐MOVPEにおける不純物濃度制御と太陽電池応用

    鬼塚隆祐, 杉山正和, 中野義昭

    化学工学会秋季大会研究発表講演要旨集(CD-ROM)   42nd   ROMBUNNO.N323 - 560   2010年8月

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    記述言語:日本語   出版者・発行元:公益社団法人 化学工学会  

    DOI: 10.11491/scej.2010f.0.560.0

  • Selectivity enhancement by hydrogen addition in selective area metal-organic vapor phase epitaxy of GaN and InGaN

    Tomonari Shioda, Tomonari Shioda, Masakazu Sugiyama, Yukihiro Shimogaki, Yoshiaki Nakano, Yoshiaki Nakano

    Physica Status Solidi (A) Applications and Materials Science   207   1375 - 1378   2010年6月 (   ISSN:1862-6300 )

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    Selective area metal-organic vapor phase epitaxy (SA-MOVPE) allows in-plane control of layer composition and thickness. The use of relatively wide (&gt;10 mm) selective masks brings about large wavelength modulation, taking advantage of vapor-phase diffusion of precursors. The wide masks, however, tendtoinduce nucleation onthem, leading tomuch reduced and uncontrollable wavelength modulation. To obtain deposition selectivity between masks and crystal surface, hydrogen addition was proved to be effective by preventing GaN nucleation on masks. Consequently, the maximum growth rate enhancement of 4.8 and the photoluminescence peak shift of 54nm (nominally 11% shift in the indium composition) were achieved for InGaN bulk layer. © 2010 WILEY-VCH Verlag GmbH &amp; Co. KGaA, Weinheim.

    DOI: 10.1002/pssa.200983606

  • 高効率量子タンデム太陽電池

    杉山 正和, 渡辺 健太郎, 肥後 昭男, 中野 義昭

    應用物理   79 ( 5 )   435 - 439   2010年5月 (   ISSN:0369-8009 )

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    記述言語:日本語   出版者・発行元:応用物理学会  

  • 高効率量子タンデム太陽電池

    杉山正和, 渡辺健太郎, 肥後昭男, 中野義昭

    応用物理   79 ( 5 )   435 - 439   2010年5月 (   ISSN:0369-8009 )

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    記述言語:日本語   出版者・発行元:応用物理学会  

  • In situ anti-oxidation treatment in GaAs MOVPE by as desorption and passivation with AlP

    Yuki Terada, Yukihiro Shimogaki, Yoshiaki Nakano, Yoshiaki Nakano, Masakazu Sugiyama, Masakazu Sugiyama

    Journal of Crystal Growth   312   1359 - 1363   2010年4月 (   ISSN:0022-0248 )

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    In situ anti-oxidation treatment after the growth of GaAs is essential for an ideal interface between GaAs and an Al 2O 3 gate dielectric, because the arsenic oxide is a major origin of interface states. The growth of AlP epitaxial layer on the top of GaAs was proposed as a novel anti-oxidation passivation method. The AlP layer almost converted to Al 2O 3 upon air exposure, serving as both a stable anti-oxidation layer and as part of a gate dielectric. Compared with surface passivation with Al by exposure to TMAl (trimethylaluminum), which we have proposed previously, the morphology of the passivated surface, which is a critical factor for the performance of a metal-insulator-semiconductor (MIS) structure, was dramatically improved due to the coexistence of a group-V precursor. For an ideal interface without arsenic oxide, an arsenic-free surface prior to the AlP growth was also required. H 2S treatment allowed us to obtain the low-As-content c(8×2) surface reconstruction of GaAs for the first time by MOVPE. Passivation by AlP on the low-As-content c(8×2) surface reconstruction of GaAs has made it possible to obtain an Al 2O 3/GaAs gate stack which exhibited smooth morphology and complete suppression of arsenic oxide. Reduction of interface states by this passivation was evidenced by the improved photoluminescence intensity from GaAs. © 2009 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jcrysgro.2009.11.065

  • Metalorganic vapor phase epitaxy of GaAs with AlP Surface passivation layer for improved metal oxide semiconductor characteristics

    Yuki Terada, Yukihiro Shimogaki, Yoshiaki Nakano, Yoshiaki Nakano, Masakazu Sugiyama, Masakazu Sugiyama

    Japanese Journal of Applied Physics   49   2010年4月 (   ISSN:0021-4922 )

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    Growth of an AlP epitaxial layer on the top of GaAs was proposed as a novel in situ passivation method. The AlP layer was almost converted to AlO x upon air exposure, forming a part of a gate dielectric. Removal of AlAs at the GaAs/AlP interface was mandatory for avoiding As-oxide formation upon air exposure, which necessitated complete As removal from the surface when switching growth from GaAs to AlP. H2S treatment allowed us to obtain low-As-content c(8 × 2) surface reconstruction for the first time with metalorganic vapor phase epitaxy (MOVPE). AlP on the c(8 × 2) GaAs surface has made it possible to obtain a smooth morphology and complete suppression of arsenic oxide. PL intensity increased by a factor of three with the AlP growth for 10 s at 500 °C, corresponding to a thickness of 0.5 nm. Accumulation capacitance obtained from capacitance-voltage (C-V) curves was the largest with that growth a condition of AlP, suggesting reduction in interface states. © 2010 The Japan Society of Applied Physics.

    DOI: 10.1143/JJAP.49.04DF04

  • III‐V CMOS photonics技術を用いた超小型InP系AWGの作製

    竹中充, 横山正史, 杉山正和, 中野義昭, 高木信一

    応用物理学関係連合講演会講演予稿集(CD-ROM)   57th   ROMBUNNO.17A-N-8   2010年3月

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    記述言語:日本語  

  • GaAs太陽電池用の高原料効率で性能劣化のないMOVPE

    鬼塚隆祐, 種村拓夫, 杉山正和, 中野義昭

    応用物理学関係連合講演会講演予稿集(CD-ROM)   57th   ROMBUNNO.19A-TW-3   2010年3月

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    記述言語:日本語  

  • MOVPE in situ AlPパッシベーション層の膜厚最適化によるGaAs MOSの界面準位低減

    寺田雄紀, 霜垣幸浩, 竹中充, 高木信一, 中野義昭, 杉山正和

    応用物理学関係連合講演会講演予稿集(CD-ROM)   57th   ROMBUNNO.19A-TK-4   2010年3月

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    記述言語:日本語  

  • MZI双安定レーザ型全光フリップ・フロップの光クロック動作

    財津優, 武田浩司, 竹中充, 種村拓夫, 中野義昭

    応用物理学関係連合講演会講演予稿集(CD-ROM)   57th   ROMBUNNO.18A-N-2   2010年3月

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    記述言語:日本語  

  • TMモード導波路型アイソレータを集積化した半導体リングレーザーの設計

    高橋元悟, 武田浩司, 雨宮智宏, 種村拓夫, 肥後昭男, 中野義昭

    応用物理学関係連合講演会講演予稿集(CD-ROM)   57th   ROMBUNNO.18A-N-8   2010年3月

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    記述言語:日本語  

  • 大型MOVPE反応炉での選択成長プロファイルによるGaAs成長反応機構の考察

    前代武瑠, 市川磨, 秦雅彦, 杉山正和, 中野義昭, 霜垣幸浩

    応用物理学関係連合講演会講演予稿集(CD-ROM)   57th   ROMBUNNO.19A-TW-1   2010年3月

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    記述言語:日本語  

  • 微小領域選択MOVPEを用いたSi上InGaAs多段階成長の時間発展

    出浦桃子, 近藤佳幸, 竹中充, 高木信一, 中野義昭, 杉山正和

    応用物理学関係連合講演会講演予稿集(CD-ROM)   57th   ROMBUNNO.19A-TW-9   2010年3月

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    記述言語:日本語  

  • 干渉型全光フリップ・フロップと全光パケットスイッチングへの応用

    武田浩司, 竹中充, 種村拓夫, 財津優, 中野義昭

    応用物理学関係連合講演会講演予稿集(CD-ROM)   57th   ROMBUNNO.18A-N-1   2010年3月

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    記述言語:日本語  

  • 極薄膜III‐V‐OI MOSFETにおける電子移動度の向上

    横山正史, 山田永, 安田哲二, 高木秀樹, 卜部友二, 石井裕之, 宮田典幸, 福原昇, 秦雅彦, 杉山正和, 中野義昭, 竹中充, 高木信一

    応用物理学関係連合講演会講演予稿集(CD-ROM)   57th   ROMBUNNO.18A-B-11   2010年3月

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    記述言語:日本語  

  • 選択MOVPEによるSi上InGaAs成長の成長領域狭窄化による横方向成長促進

    近藤佳幸, 出浦桃子, 竹中充, 高木信一, 中野義昭, 杉山正和

    応用物理学関係連合講演会講演予稿集(CD-ROM)   57th   ROMBUNNO.19A-TW-8   2010年3月

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    記述言語:日本語  

  • 量子井戸太陽電池用InGaAs/GaAsP歪み補償量子井戸成長のin situ観察

    杉山正和, 杉田憲一, WANG Yunpeng, 中野義昭

    応用物理学関係連合講演会講演予稿集(CD-ROM)   57th   ROMBUNNO.19A-TW-2   2010年3月

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    記述言語:日本語  

  • B-12-15 フェーズアレイ1×8集積光スイッチを用いた可変光バッファ(B-12.フォトニックネットワーク,一般セッション)

    小山 智史, 種村 拓夫, ソーアンジ イブラヒム・ムラット, 大山 貴晴, 美野 真司, 中野 義昭

    電子情報通信学会総合大会講演論文集   2010 ( 2 )   2010年3月 (     eISSN:2162-2701 )

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • C-4-7 大容量光ルータのための広帯域フェーズアレイ型モノリシック光スイッチ(C-4.レーザ・量子エレクトロニクス,一般セッション)

    ソーアンジ イブラーヒム・ムラット, 種村 拓夫, 中野 義昭

    電子情報通信学会総合大会講演論文集   2010 ( 1 )   258 - 258   2010年3月

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    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

  • フェーズアレイ1×8集積光スイッチを用いた可変光バッファ

    小山智史, 種村拓夫, SOGANCI Ibrahim Murat, 大山貴晴, 美野真司, 中野義昭

    電子情報通信学会大会講演論文集   2010   476   2010年3月 (   ISSN:1349-1369 )

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    記述言語:日本語  

  • パラダイムシフトを支える環境調和型実装技術 情報ネットワーク省電力化に向けた光パケットスイッチング技術

    種村拓夫, 中野義昭

    エレクトロニクス実装学会誌   13 ( 2 )   122 - 127   2010年3月 (   ISSN:1343-9677 )

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    記述言語:日本語  

    DOI: 10.5104/jiep.13.122

  • 多波長環境におけるSOAスイッチのダイナミックレンジ評価実験(フォトニックネットワーク関連技術,一般)

    李 慧, 今泉 英明, 種村 拓夫, 中野 義昭, 森川 博之

    電子情報通信学会技術研究報告. PN, フォトニックネットワーク   109 ( 455 )   67 - 72   2010年3月 (   ISSN:0913-5685 )

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    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    本稿では,SOA型光スイッチに基づいて多波長光パケット交換方式を実現する上で問題となる,SOA型光スイッチの非線形効果による波長数制約に関して特性評価を行う.超広帯域インターネットを実現する上で,低消費電力で動作可能な光パケット交換技術の実現が必須となる.その中でも特に,多波長光パケット交換技術は,1つのパケットを複数の波長に分割・符号化し,波長依存性の低い光スイッチにより一括で交換することで,光パケット交換ノードを構成する光デバイス数を劇的に減少させる.そのため,単波長光パケット交換に比べて飛躍的に消費電力を低減できる可能性がある.高速応答性と高消光比の観点から,我々はSOA型光スイッチを用いた多波長光パケット交換技術を検討している.SOA型光スイッチは,大規模化が容易なブロードキャストアンドセレクト方式と高い親和性を備えるため,光パケット交換に適していると考えられる.しかし一方では,入力信号強度が強くなると非線形光学効果によって光信号雑音比(OSNR)が劣化するため,入力される波長数や波長間隔に制約を与える.本稿では,光信号雑音と利用する波長数,波長間隔,SOA型光スイッチのゲインなどの要素間の関係を明らかにするために,入力信号強度のダイナミックレンジ評価を行った.その結果,SOA型光スイッチのゲインが6dBのとき,100GHz間隔の15波長でダイナミックレンジが15dBであり,ゲインを更に小さくすれば十分な波長数が確保できることが分かった.

  • ハイブリッド型光 Add/Drop リングネットワークにおける交換ノードの初期的検証実験

    李 慧, 今泉 英明, 種村 拓夫, 中野 義昭, 森川 博之

    電気学会研究会資料. EMT, 電磁界理論研究会   2010 ( 1 )   47 - 51   2010年1月

     詳細

    記述言語:英語  

  • ハイブリッド型光Add/Dropリングネットワークにおける交換ノードの初期的検証実験(フォトニックNW・デバイス,フォトニック結晶・ファイバとその応用,光集積回路,光導波路素子,光スイッチング,導波路解析,及び一般)

    李 慧, 今泉 英明, 種村 拓夫, 中野 義昭, 森川 博之

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   109 ( 403 )   47 - 51   2010年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    本稿では,メトロエリアにおいて将来の多彩なアプリケーションを支援することを目的とし,光回線交換(OCS)方式と多波長光パケット交換(MW-OPS)方式を組み合わせたハイブリッド型光Add/Dropリングネットワーク技術を提案する.現在メトロエリアでは,OCS方式を基礎とするROADM (Reconfigurable Optical Add/Drop Multiplexe)技術を用いたリングネットワークが広く利用されている.ROADM技術では,OCS方式の特徴によりQoSを容易に保証できるが,帯域利用効率の低さが問題となる.一方で,近年登場したバースト交換方式を基礎とするリングバースト技術では,高い帯域利用効率を提供できるが,QoS保証を行うにはスロット割当を非常に高い精度で行わなければならない.本稿では,双方の利点を同時に実現するために,OCS方式とMW-OPS方式を組み合わせたリングネットワークアーキテクチャを提案し,交換ノードを設計する.120(12波長×10)Gb/s交換ノードを実装し,初期的検証実験を行う.

  • ハイブリッド型光Add/Dropリングネットワークにおける交換ノードの初期的検証実験(フォトニック NW・デバイス,フォトニック結晶・ファイバとその応用,光集積回路,光導波路素子,光スイッチング,導波路解析,及び一般)

    李 慧, 今泉 英明, 種村 拓夫, 中野 義昭, 森川 博之

    電子情報通信学会技術研究報告. PN, フォトニックネットワーク   109 ( 401 )   47 - 51   2010年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    本稿では,メトロエリアにおいて将来の多彩なアプリケーションを支援することを目的とし,光回線交換(OCS)方式と多波長光パケット交換(MW-OPS)方式を組み合わせたハイブリッド型光Add/Dropリングネットワーク技術を提案する.現在メトロエリアでは,OCS方式を基礎とするROADM(Reconfigurable Optical Add/Drop Multiplexer)技術を用いたリングネットワークが広く利用されている.ROADM技術では,OCS方式の特徴によりQoSを容易に保証できるが,帯域利用効率の低さが問題となる.一方で,近年登場したバースト交換方式を基礎とするリングバースト技術では,高い帯域利用効率を提供できるが,QoS保証を行うにはスロット割当を非常に高い精度で行われなければならない.本稿では,双方の利点を同時に実現するために,OCS方式とMW-OPS方式を組み合わせたリングネットワークアーキテクチャを提案し,交換ノードを設計する.120(12波長×10)Gb/s交換ノードを実装し,初期的検証実験を行う.

  • ハイブリッド型光Add/Dropリングネットワークにおける交換ノードの初期的検証実験(フォトニック NW・デバイス,フォトニック結晶・ファイバとその応用,光集積回路,光導波路素子,光スイッチング,導波路解析,及び一般)

    李 慧, 今泉 英明, 種村 拓夫, 中野 義昭, 森川 博之

    電子情報通信学会技術研究報告. OPE, 光エレクトロニクス   109 ( 402 )   47 - 51   2010年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    本稿では,メトロエリアにおいて将来の多彩なアプリケーションを支援することを目的とし,光回線交換(OCS)方式と多波長光パケット交換(MW-OPS)方式を組み合わせたハイブリッド型光Add/Dropリングネットワーク技術を提案する.現在メトロエリアでは,OCS方式を基礎とするROADM(Reconfigurable Optical Add/Drop Multiplexer)技術を用いたリングネットワークが広く利用されている. ROADM技術では,OCS方式の特徴によりQoSを容易に保証できるが,帯域利用効率の低さが問題となる.一方で,近年登場したバースト交換方式を基礎とするリングバースト技術では,高い帯域利用効率を提供できるが, QoS保証を行うにはスロット割当を非常に高い精度で行わなければならない.本稿では,双方の利点を同時に実現するために, OCS方式とMW-OPS方式を組み合わせたリングネットワークアーキテクチャを提案し,交換ノードを設計する. 120(12波長×10)Gb/s交換ノードを実装し,初期的検証実験を行う.

  • 特集に寄せて

    中野 義昭

    エレクトロニクス実装学会誌 = Journal of Japan Institute of Electronics Packaging   13 ( 1 )   1   2010年1月 (   ISSN:1343-9677   eISSN:1884-121X )

     詳細

    記述言語:日本語   出版者・発行元:The Japan Institute of Electronics Packaging  

    DOI: 10.5104/jiep.13.1

  • 特集に寄せて

    中野 義昭

    エレクトロニクス実装学会誌   13 ( 1 )   1   2010年1月 (   ISSN:1343-9677   eISSN:1884-121X )

     詳細

    記述言語:日本語   出版者・発行元:The Japan Institute of Electronics Packaging  

    DOI: 10.5104/jiep.13.1

  • Dependences of Initial Nucleation on Growth Conditions of InAs on Si by Micro-Channel Selective-Area Metal-Organic Vapor Phase Epitaxy

    Y. Kondo, M. Deura, M. Takenaka, S. Takagi, Y. Nakano, M. Sugiyama

    Japanese Journal of Applied Physics   49 ( 12 )   125601   2010年

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  • Initial growth of InAs on P-terminated Si(111) surfaces to promote uniform lateral growth of InGaAs micro-discs on patterned Si

    Y. Kondo, M. Deura, Y. Terada, T. Hoshii, M. Takenaka, S. Takagi, Y. Nakano, M. Sugiyama

    Journal of Crystal Growth   312 ( 8 )   1348 - 1352   2010年

  • Twin-free InGaAs thin layer on Si by multi-step growth using micro-channel selective-area MOVPE

    M. Deura, Y. Kondo, M. Takenaka, S. Takagi, Y. Nakano, M. Sugiyama

    Journal of Crystal Growth   312 ( 8 )   1353 - 1358   2010年

  • 「ソーラークエスト:太陽光エネルギー利用の未来を拓く国際研究拠点」

    中野 義昭

    生産研究   62 ( 5 )   458 - 460   2010年 (   ISSN:0037-105X )

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    出版者・発行元:Institute of Industrial Science The University of Tokyo  

    DOI: 10.11188/seisankenkyu.62.458

  • プラズモン光学を応用したMEMS型可変色デバイスの検討

    李 泰林, 肥後 昭男, 中野 義昭, 藤田 博之, 年吉 洋

    電気学会研究会資料. MSS, マイクロマシン・センサシステム研究会   2010 ( 1 )   107 - 108   2010年

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    記述言語:英語  

    DOI: 10.1109/OMEMS.2010.5672160

  • プラズモン光学を応用したMEMS型可変色デバイスの検討

    LEE Taelim, 肥後昭男, 中野義昭, 藤田博之, 年吉洋

    電気学会マイクロマシン・センサシステム研究会資料   MSS-10 ( 1-6.8-16.18-30 )   107 - 108   2010年

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    記述言語:英語  

    DOI: 10.1109/OMEMS.2010.5672160

  • 中国・日本科学最前線―研究の現場から―環境・エネルギー Part2―低炭素社会実現に向けた新技術の開発 次世代高効率太陽電池の開発と展望

    中野義昭

    中国・日本科学最前線-研究の現場から 2010年版   457 - 460   2010年

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    記述言語:日本語  

  • 大型反応器でのGaAs選択MOVPE成長の解析と制御

    前代 武瑠, 市川 磨, 秦 雅彦, 杉山 正和, 中野 義昭, 霜垣 幸浩

    化学工学会 研究発表講演要旨集   2010 ( 0 )   559 - 559   2010年

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    記述言語:日本語   出版者・発行元:The Society of Chemical Engineers, Japan  

    DOI: 10.11491/scej.2010f.0.559.0

  • 成長領域狭窄化選択MOVPEによるSi上InGaAsの高横/縦比成長

    近藤 佳幸, 出浦 桃子, 竹中 充, 高木 信一, 中野 義昭, 杉山 正和

    化学工学会 研究発表講演要旨集   2010 ( 0 )   558 - 558   2010年

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    記述言語:日本語   出版者・発行元:The Society of Chemical Engineers, Japan  

    DOI: 10.11491/scej.2010f.0.558.0

  • 微小領域選択MOVPEを用いたSi上InGaAsの形状均一化に向けたSi表面状態とInAs成長の関係

    出浦 桃子, 近藤 佳幸, 竹中 充, 高木 信一, 霜垣 幸浩, 中野 義昭, 杉山 正和

    化学工学会 研究発表講演要旨集   2010 ( 0 )   557 - 557   2010年

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    記述言語:日本語   出版者・発行元:The Society of Chemical Engineers, Japan  

    DOI: 10.11491/scej.2010f.0.557.0

  • 高原料効率GaAs-MOVPEにおける不純物濃度制御と太陽電池応用

    鬼塚 隆祐, 杉山 正和, 中野 義昭

    化学工学会 研究発表講演要旨集   2010 ( 0 )   560 - 560   2010年

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    記述言語:日本語   出版者・発行元:The Society of Chemical Engineers, Japan  

    DOI: 10.11491/scej.2010f.0.560.0

  • Ce:YIGを有するInGaAsP/InP非対称導波路からなる非相反偏波コンバータ(半導体レーザ関連技術,及び一般)

    雨宮 智宏, 阿部 健治, 種村 拓夫, 水本 哲弥, 中野 義昭

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   109 ( 331 )   11 - 17   2009年12月 (   ISSN:0913-5685 )

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    今回我々は非相反偏波コンバータの提案・実証を行った。提案する非相反偏波コンバータはInGaAsP/InPの非対称リブ型導波路の上部に強磁性Ce:YIGを配置した構造を持つ。シミュレーションから、適切な設計を行うことで、0.27mmの素子において、およそ92%の非相反な偏波変換(前進波:TE→TE,後退波:TE→TM)を得られることを予測した。その結果に基づいて実際の素子の作製に成功し、波長1.52μmから1.58μmの光に対し38%の非相反偏波変換を実現した。

  • Ce:YIGを有するInGaAsP/InP非対称導波路からなる非相反偏波コンバータ

    雨宮智宏, 阿部健治, 種村拓夫, 水本哲弥, 中野義昭

    電子情報通信学会技術研究報告   109 ( 331(LQE2009 139-153) )   11 - 17   2009年12月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    今回我々は非相反偏波コンバータの提案・実証を行った。提案する非相反偏波コンバータはInGaAsP/InPの非対称リブ型導波路の上部に強磁性Ce:YIGを配置した構造を持つ。シミュレーションから、適切な設計を行うことで、0.27mmの素子において、およそ92%の非相反な偏波変換(前進波:TE→TE,後退波:TE→TM)を得られることを予測した。その結果に基づいて実際の素子の作製に成功し、波長1.52μmから1.58μmの光に対し38%の非相反偏波変換を実現した。

  • Blueshift of intersubband transition wavelength in AlN/GaN multiple quantum wells by low temperature metal organic vapor phase epitaxy using pulse injection method

    Jung Seung Yang, Hassanet Sodabanlu, Masakazu Sugiyama, Masakazu Sugiyama, Yoshiaki Nakano, Yoshiaki Nakano, Yukihiro Shimogaki

    Applied Physics Letters   95   2009年11月 (   ISSN:0003-6951 )

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    AlN/GaN multiquantum wells (MQWs) were grown at different growth temperatures via a metal organic vapor phase epitaxy (MOVPE) system using a pulse injection method and their intersubband transition (ISBT) properties were investigated. Strong ISBT at 1.58 μm measured at room temperature was realized with MQWs grown at 770°C and its absorption properties was the best reported in MOVPE system using GaN buffer layer. Clear blueshift of ISB absorption wavelength by lowering growth temperature was observed, which suggests that interdiffusion within MQWs was suppressed at lower growth temperatures. © 2009 American Institute of Physics.

    DOI: 10.1063/1.3254230

  • Strain effects on the intersubband transitions in GaN/AlN multiple quantum wells grown by low-temperature metal organic vapor phase epitaxy with AlGaN interlayer

    Hassanet Sodabanlu, Jung Seung Yang, Masakazu Sugiyama, Yukihiro Shimogaki, Yoshiaki Nakano

    Applied Physics Letters   95   2009年11月 (   ISSN:0003-6951 )

     詳細

    The strain in low-temperature-grown GaN/AlN multiple quantum wells (MQWs) have been tailored by inserting an AlGaN interlayer between an AlN template and the MQWs, for the purpose of intersubband transition (ISBT) at shorter wavelength (1.52 μm) with smaller full-width at half-maximum (FWHM) (113 meV). The strain in GaN wells, ISBT wavelength and its FWHM were dependent on Al-content in the AlGaN interlayer. The compressive strain in GaN wells shifted ISBT to shorter wavelengths and narrowed absorption peaks. The interlayer with an appropriate Al-content has been proved to be mandatory for achieving strong and short-wavelength ISBT by metal organic vapor phase epitaxy-grown GaN/AlN MQWs. © 2009 American Institute of Physics.

    DOI: 10.1063/1.3253715

  • In situ passivation of InP surface using H2 S during metal organic vapor phase epitaxy

    Hong Liang Lu, Yuki Terada, Yukihiro Shimogaki, Yoshiaki Nakano, Yoshiaki Nakano, Masakazu Sugiyama, Masakazu Sugiyama

    Applied Physics Letters   95   2009年10月 (   ISSN:0003-6951 )

     詳細

    An in situ surface passivation of InP(100) using H2 S during metal organic vapor phase epitaxy has been characterized by x-ray photoemission spectroscopy and photoluminescence. X-ray photoelectron spectra indicate that the H2 S -treated InP at 300°C is free of P and In oxides even after exposure to air. The enhancement of photoluminescence intensity confirms that H2 S passivation of an InP epilayer can reduce the surface defects. It is shown that H2 S treatment results in In-S bonds, which dominate the sulfur-passivated InP surface, effectively suppressing interface oxidation during the subsequent ultrathin Al2 O3 dielectric film growth. © 2009 American Institute of Physics.

    DOI: 10.1063/1.3233935

  • マッハ・ツェンダ干渉器型双安定レーザの全光フリップ・フロップ動作実証(超高速伝送・変復調・分散補償技術,超高速光信号処理技術,広帯域光増幅・WDM技術,受光デバイス,高光出力伝送技術,一般,(ECOC報告))

    武田 浩司, 竹中 充, 種村 拓夫, 財津 優, 中野 義昭

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   109 ( 245 )   121 - 124   2009年10月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    近年様々な光信号処理用の素子が開発されており,中でも全光フリップ・フロップはそのメモリ機能や信号再生への応用から実現が期待されている.今回我々はマッハ・ツェンダ干渉器型双安定レーザの全光フリップ・フロップ動作実証を報告する.これは2つの発振モード間の双安定性を利用しており,2モードが利得領域において100%の重なりを持つことによる高速動作,低駆動エネルギー,また可飽和吸収体による広帯域動作を狙ったものである.DBRを集積することで単一モード発振が得られ,2つの発振モード間でSRフリップ・フロップ動作が実証された.67pJ以下の光パルスで駆動し,立ち上がり,立下りの時間はそれぞれ320,68ps以下であった.

  • III‐V CMOS photonics実現に向けたInP系フォトニックワイヤーの作製

    竹中充, 横山正史, 種村拓夫, 杉山正和, 中野義昭, 高木信一

    応用物理学会学術講演会講演予稿集   70th ( 3 )   1086   2009年9月

     詳細

    記述言語:日本語  

  • MOVPEにおけるin situ AIPパッシベーションによるGaAs表面準位抑制

    寺田雄紀, 出浦桃子, 霜垣幸浩, 竹中充, 高木信一, 中野義昭, 杉山正和

    応用物理学会学術講演会講演予稿集   70th ( 1 )   319   2009年9月

     詳細

    記述言語:日本語  

  • In‐situ観察MOVPEによるGaAs太陽電池構造の高原料効率成長

    鬼塚隆祐, 杉山正和, 中野義昭

    応用物理学会学術講演会講演予稿集   70th ( 1 )   319   2009年9月

     詳細

    記述言語:日本語  

  • MZI双安定レーザーを用いた全光フリップ・フロップの動的動作実証

    武田浩司, 竹中充, 種村拓夫, 財津優, 中野義昭

    応用物理学会学術講演会講演予稿集   70th ( 3 )   1085   2009年9月

     詳細

    記述言語:日本語  

  • 基板貼り合わせによるSi基板上メタルS/D III‐V‐OI n‐MOSFETの移動度向上とp‐MOSFET動作

    横山正史, 安田哲二, 高木秀樹, 山田永, 福原昇, 秦雅彦, 杉山正和, 中野義昭, 竹中充, 高木信一

    応用物理学会学術講演会講演予稿集   70th ( 2 )   803   2009年9月

     詳細

    記述言語:日本語  

  • 微小領域選択MOVPEにおける表面P終端SiからのInAs均一核発生

    近藤佳幸, 出浦桃子, 竹中充, 高木信一, 中野義昭, 杉山正和

    応用物理学会学術講演会講演予稿集   70th ( 1 )   321   2009年9月

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    記述言語:日本語  

  • 微小領域選択MOVPEによるSi上InGaAs結晶最表部における双晶消滅層の形成と評価

    出浦桃子, 近藤佳幸, 竹中充, 高木信一, 中野義昭, 杉山正和

    応用物理学会学術講演会講演予稿集   70th ( 1 )   321   2009年9月

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    記述言語:日本語  

  • 直接基板接合によるSi基板上III‐V CMOSトランジスタ

    竹中充, 横山正史, 杉山正和, 中野義昭, 高木信一

    応用物理学会学術講演会講演予稿集   70th ( 0 )   87   2009年9月

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    記述言語:日本語  

  • 高効率太陽電池用InGaAs/GaAsP歪み補償量子井戸におけるヘテロ界面急峻性

    杉山正和, WANG Yunpeng, 出浦桃子, 鬼塚隆祐, 中野義昭

    応用物理学会学術講演会講演予稿集   70th ( 1 )   319   2009年9月

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    記述言語:日本語  

  • III‐V MISFET on Siを目指したSi(111)上InGaAsの選択ヘテロエピタキシャル成長

    杉山正和, 出浦桃子, 竹中充, 中野義昭, 高木信一

    電気学会電子・情報・システム部門大会講演論文集(CD-ROM)   2009   ROMBUNNO.TC1-2   2009年9月

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    記述言語:日本語  

  • AlPおよびH2Sを用いたGaAs表面のMOVPE反応炉内in situパッシベーション

    寺田雄紀, 出浦桃子, 霜垣幸浩, 杉山正和, 中野義昭

    化学工学会秋季大会研究発表講演要旨集(CD-ROM)   41st   A117 - 11   2009年8月

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    記述言語:日本語   出版者・発行元:公益社団法人 化学工学会  

    DOI: 10.11491/scej.2009f.0.11.0

  • InGaN/GaN選択MOVPEによる可視光発光波長シフトのメカニズム

    杉山正和, 塩田倫也, 富田祐貴, 霜垣幸浩, 中野義昭

    化学工学会秋季大会研究発表講演要旨集(CD-ROM)   41st   A104 - 1   2009年8月

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    記述言語:日本語   出版者・発行元:公益社団法人 化学工学会  

    DOI: 10.11491/scej.2009f.0.1.0

  • MOVPE微小領域選択成長におけるSi上InAs核発生の成長条件依存性

    近藤佳幸, 出浦桃子, 竹中充, 高木信一, 中野義昭, 杉山正和

    化学工学会秋季大会研究発表講演要旨集(CD-ROM)   41st   A120 - 13   2009年8月

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    記述言語:日本語   出版者・発行元:公益社団法人 化学工学会  

    DOI: 10.11491/scej.2009f.0.13.0

  • マルチスケール解析によるGaN MOVPE反応メカニズムの検討

    杉山正和, 安河内諭, 塩田倫也, 霜垣幸浩, 中野義昭

    化学工学会秋季大会研究発表講演要旨集(CD-ROM)   41st   A121 - 14   2009年8月

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    記述言語:日本語   出版者・発行元:公益社団法人 化学工学会  

    DOI: 10.11491/scej.2009f.0.14.0

  • 微小領域選択MOVPEにおけるSi上InGaAsの原子構造と光学特性解析

    出浦桃子, 近藤佳幸, 星井拓也, 竹中充, 高木信一, 中野義昭, 杉山正和

    化学工学会秋季大会研究発表講演要旨集(CD-ROM)   41st   A105 - 2   2009年8月

     詳細

    記述言語:日本語   出版者・発行元:公益社団法人 化学工学会  

    DOI: 10.11491/scej.2009f.0.2.0

  • 1×16フェーズアレイ型半導体光パケットスイッチ(光部品・電子デバイス実装技術,一般)

    種村 拓夫, ソーアンジ イブラーヒム・ムラット, 樋口 和英, 武田 浩司, 中野 義昭

    電子情報通信学会技術研究報告. EMD, 機構デバイス   109 ( 173 )   17 - 20   2009年8月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    次世代の大容量光パケットスイッチング(OPS:optical packet switching)ネットワークや光インターコネクションシステムにおいて,数ナノ秒以下の応答速度と広帯域な波長透過特性を持つ大規模光スイッチは,不可欠な技術である.我々は,ポート数の拡張に対して優位なスケーラビリティが期待されるフェーズアレイ型光スイッチに注目し,研究を進めてきた.今回,InPチップ上にモノリシック集積した1×16光スイッチの作製に初めて成功し,Cバンド全域(1530-1565nm)における波長無依存動作,17dBの消光比,4〜8dBのオンチップ光損失,40Gbps信号の低ペナルティ透過特性など,諸特性の実証を行った.さらに,専用のスイッチドライバ回路を開発し,11nsの切り替え速度で全16ポートへの高速スイッチングの実証に成功した.

  • 1×16フェーズアレイ型半導体光パケットスイッチ

    種村拓夫, SOGANCI Ibrahim Murat, 樋口和英, 武田浩司, 中野義昭

    電子情報通信学会技術研究報告   109 ( 173(EMD2009 26-58) )   17 - 20   2009年8月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    次世代の大容量光パケットスイッチング(OPS:optical packet switching)ネットワークや光インターコネクションシステムにおいて,数ナノ秒以下の応答速度と広帯域な波長透過特性を持つ大規模光スイッチは,不可欠な技術である.我々は,ポート数の拡張に対して優位なスケーラビリティが期待されるフェーズアレイ型光スイッチに注目し,研究を進めてきた.今回,InPチップ上にモノリシック集積した1×16光スイッチの作製に初めて成功し,Cバンド全域(1530-1565nm)における波長無依存動作,17dBの消光比,4〜8dBのオンチップ光損失,40Gbps信号の低ペナルティ透過特性など,諸特性の実証を行った.さらに,専用のスイッチドライバ回路を開発し,11nsの切り替え速度で全16ポートへの高速スイッチングの実証に成功した.

  • 1×16フェーズアレイ型半導体光パケットスイッチ(光部品・電子デバイス実装技術,一般)

    種村 拓夫, ソーアンジ イブラーヒム・ムラット, 樋口 和英, 武田 浩司, 中野 義昭

    電子情報通信学会技術研究報告. OPE, 光エレクトロニクス   109 ( 175 )   17 - 20   2009年8月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    次世代の大容量光パケットスイッチング(OPS:optical packet switching)ネットワークや光インターコネクションシステムにおいて,数ナノ秒以下の応答速度と広帯域な波長透過特性を持つ大規模光スイッチは,不可欠な技術である.我々は,ポート数の拡張に対して優位なスケーラビリティが期待されるフェーズアレイ型光スイッチに注目し,研究を進めてきた.今回,InPチップ上にモノリシック集積した1×16光スイッチの作製に初めて成功し,Cバンド全域(1530-1565nm)における波長無依存動作,17dBの消光比,4〜8dBのオンチップ光損失,40Gbps信号の低ペナルティ透過特性など,諸特性の実証を行った.さらに,専用のスイッチドライバ回路を開発し,11nsの切り替え速度で全16ポートへの高速スイッチングの実証に成功した.

  • 1×16フェーズアレイ型半導体光パケットスイッチ(光部品・電子デバイス実装技術,一般)

    種村 拓夫, ソーアンジ イブラーヒム・ムラット, 樋口 和英, 武田 浩司, 中野 義昭

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   109 ( 176 )   17 - 20   2009年8月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    次世代の大容量光パケットスイッチング(OPS:optical packet switching)ネットワークや光インターコネクションシステムにおいて,数ナノ秒以下の応答速度と広帯域な波長透過特性を持つ大規模光スイッチは,不可欠な技術である.我々は,ポート数の拡張に対して優位なスケーラビリティが期待されるフェーズアレイ型光スイッチに注目し,研究を進めてきた.今回,InPチップ上にモノリシック集積した1×16光スイッチの作製に初めて成功し,Cバンド全域(1530-1565nm)における波長無依存動作,17dBの消光比,4〜8dBのオンチップ光損失,40Gbps信号の低ペナルティ透過特性など,諸特性の実証を行った.さらに,専用のスイッチドライバ回路を開発し,11nsの切り替え速度で全16ポートへの高速スイッチングの実証に成功した.

  • 1×16フェーズアレイ型半導体光パケットスイッチ(光部品・電子デバイス実装技術,一般)

    種村 拓夫, ソーアンジ イブラーヒム・ムラット, 樋口 和英, 武田 浩司, 中野 義昭

    電子情報通信学会技術研究報告. CPM, 電子部品・材料   109 ( 174 )   17 - 20   2009年8月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    次世代の大容量光パケットスイッチング(OPS:optical packet switching)ネットワークや光インターコネクションシステムにおいて,数ナノ秒以下の応答速度と広帯域な波長透過特性を持つ大規模光スイッチは,不可欠な技術である.我々は,ポート数の拡張に対して優位なスケーラビリティが期待されるフェーズアレイ型光スイッチに注目し,研究を進めてきた.今回,InPチップ上にモノリシック集積した1×16光スイッチの作製に初めて成功し,Cバンド全域(1530-1565nm)における波長無依存動作,17dBの消光比,4〜8dBのオンチップ光損失,40Gbps信号の低ペナルティ透過特性など,諸特性の実証を行った.さらに,専用のスイッチドライバ回路を開発し,11nsの切り替え速度で全16ポートへの高速スイッチングの実証に成功した.

  • 半導体集積光デバイス・モノリシック光集積回路の現状と展望(集積光デバイス技術,<特集>エレクトロニクスソサイエティ和文論文誌500号記念論文)

    種村 拓夫, 中野 義昭

    電子情報通信学会論文誌. C, エレクトロニクス   92 ( 8 )   498 - 505   2009年8月 (   ISSN:1345-2827 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    光集積回路(PIC:photonic integrated circuit)の概念がS.E.Millerによって初めて提唱されてから実に40年の月日が経つ.以来,変調器一体集積レーザに始まり,多波長送受信器,波長変換素子に至るまで,種々の高機能光集積素子が実現してきた.最近では,米インフィネラ社による1.6Tbit/s(40チャネル×40Gbit/s)送信器をはじめとし,大規模PICの発展が著しい.本論文では,InP系化合物半導体光集積回路の発展の歴史を振り返り,最近の主要技術を紹介するとともに,今後の展望について概説する.

  • 半導体集積光デバイス・モノリシック光集積回路の現状と展望

    種村拓夫, 中野義昭

    電子情報通信学会論文誌 C   J92-C ( 8 )   498 - 505   2009年8月 (   ISSN:1345-2827 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    光集積回路(PIC:photonic integrated circuit)の概念がS.E.Millerによって初めて提唱されてから実に40年の月日が経つ.以来,変調器一体集積レーザに始まり,多波長送受信器,波長変換素子に至るまで,種々の高機能光集積素子が実現してきた.最近では,米インフィネラ社による1.6Tbit/s(40チャネル×40Gbit/s)送信器をはじめとし,大規模PICの発展が著しい.本論文では,InP系化合物半導体光集積回路の発展の歴史を振り返り,最近の主要技術を紹介するとともに,今後の展望について概説する.

  • Selective area metal-organic vapor phase epitaxy of nitride semiconductors for multicolor emission

    Tomonari Shioda, Yuki Tomita, Masakazu Sugiyama, Yukihiro Shimogaki, Yoshiaki Nakano

    IEEE Journal on Selected Topics in Quantum Electronics   15   1053 - 1065   2009年7月 (   ISSN:1077-260X )

     詳細

    Selective area metalorganic vapor phase epitaxy (SA-MOVPE) allows in-plane control of emission wavelength by tailored width of masks. For InGaN/GaN multiple quantum wells (MQWs), modulation of luminescence wavelength was achieved based on a balance between vapor-phase diffusion of group-III precursors and their surface incorporation. For the basic understanding of the SA-MOVPE of nitride semiconductors, thickness profiles of GaN, InN, AlN, and InGaN layers around relatively wide (&gt;10 μm) masks were investigated. The effective lateral diffusion length D/Ks which is the ratio of the vapor-phase mass diffusivity of a precursor to its surface incorporation rate constant, was extracted for GaN and InN. The value was much larger for InN due to smaller surface incorporation rate. In the SA-MOVPE of InGaN bulk layer at around 800°C indium incorporation rate seems to be limited by the surface flux of a gallium precursor, resulting in no variation in the indium content. Varied width of the InGaN wells by the existence of masks seems to govern the shift in the luminescence wavelength from InGaN/GaN MQWs. Therefore, design of the thickness distribution of GaN based on the quantitative model is essential to the controlled in-plane color modulation of solid-state lighting devices using SA-MOVPE. © 2006 IEEE.

    DOI: 10.1109/JSTQE.2009.2015433

  • Intersubband transition at 1.52μm in GAN/ALN multiple quantum wells grown by metal organic vapor phase epitaxy

    Hassanet Sodabanlu, Jung Seung Yang, Masakazu Sugiyama, Masakazu Sugiyama, Yukihiro Shimogaki, Yoshiaki Nakano, Yoshiaki Nakano

    Applied Physics Express   2   2009年6月 (   ISSN:1882-0778 )

     詳細

    We have achieved the intersubband transition at 1.52 μm in metal organic vapor phase epitaxy (MOVPE) grown 40-period GaN (1.4 nm)/ AlN (4.3 nm) multiple quantum wells (MQWs). Two breakthroughs led us to this achievement: (1) the low temperature growth of MQWs at 830 °C on a high-quality AlGaN/AlN template grown at higher temperatures led to excellent GaN/AlN interfaces, and (2) reduction of carbon impurity in the GaN wells by pulse injection method resulted in a carrier density as high as 2 × 1019 cm-3 in spite of the low temperature growth. A strong absorption peak at 1.52 μm with a full-width at half-maximum of 113meV was clearly observed at room temperature. ©2009 The Japan Society of Applied Physics.

    DOI: 10.1143/APEX.2.061002

  • ポストSi高効率太陽電池技術の開発 量子ドット超格子,ハイブリッド素材などの新技術 エネルギー・環境技術国際研究拠点SOLAR QUESTが発足

    中野義昭, 瀬川浩司, 岡田至崇, 杉山正和

    Semicond FPD World   28 ( 7 )   40 - 42   2009年5月

     詳細

    記述言語:日本語  

  • Fabrication of abrupt AlN/GaN multi quantum wells by low temperature metal organic vapor phase epitaxy

    Jung Seung Yang, Hassanet Sodabanlu, Masakazu Sugiyama, Masakazu Sugiyama, Yoshiaki Nakano, Yoshiaki Nakano, Yukihiro Shimogaki

    Applied Physics Express   2   2009年5月 (   ISSN:1882-0778 )

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    AlN/GaN multi quantum wells (MQWs) with abrupt interface were grown by metal organic vapor phase epitaxy (MOVPE). It was revealed that the interface abruptness and coherency of AlN/GaN MQWs to AlN buffer layer were improved at lower temperature of 930 °C. We suggest that the inter-diffusion between wells and barriers was suppressed by lowering growth temperature. The surface of MQWs became smooth at lower temperature of 930 °C showing 0.86nm of root mean square (RMS) value. Therefore, it is strongly suggested that the low temperature growth at 930 °C is essential for the fabrication of abrupt and smooth AlN/GaN MQWs by MOVPE. © 2009 The Japan Society of Applied Physics.

    DOI: 10.1143/APEX.2.051004

  • Selective area metal-organic vapor-phase epitaxy of InN, GaN and InGaN covering whole composition range

    Tomonari Shioda, Tomonari Shioda, Masakazu Sugiyama, Yukihiro Shimogaki, Yoshiaki Nakano, Yoshiaki Nakano

    Journal of Crystal Growth   311   2809 - 2812   2009年5月 (   ISSN:0022-0248 )

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    To investigate mask effects on InGaN selective area metal-organic vapor-phase epitaxy (SA-MOVPE), in-plane thickness profiles of InGaN were investigated with various indium contents covering between InN and GaN. A numerical simulation employing vapor-phase diffusion (VPD) model was also carried out for the quantitative analysis of VPD effect. At the growth temperatures of 650 and 700 °C, the indium content in the vapor phase and that in the solid phase exhibited almost linear relationship, suggesting that the growth of InGaN can be approximated as the superposition of the growth of InN and GaN. The effective vapor-phase diffusion length D/ks of GaN was much smaller than InN. The profile of the InGaN growth rate in the selective area became more gradual as the solid indium content increased, and the trend seems to be the linear interpolation between the profiles of GaN and InN. However, as the indium content increases, deposition selectivity between mask and crystal surface become degenerated, and the VPD effect was almost canceled when the solid indium content exceeds 0.5. Although further improvement on the growth conditions is necessary to improve selectivity, basic information for the design of the SA-MOVPE of InGaN has been obtained, which will contribute to InGaN-based monolithically integrated multi-wavelength devices. © 2008 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jcrysgro.2009.01.013

  • Role of vapor-phase diffusion in selective-area MOVPE of InGaN/GaN MQWs

    Y. Tomita, T. Shioda, M. Sugiyama, Y. Shimogaki, Y. Nakano

    JOURNAL OF CRYSTAL GROWTH   311 ( 10 )   2813 - 2816   2009年5月 (   ISSN:0022-0248   eISSN:1873-5002 )

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    記述言語:英語   出版者・発行元:ELSEVIER SCIENCE BV  

    Selective-area growth (SAG) of InGaN/GaN multiple quantum wells (MQWs) was performed by metalorganic vapor phase epitaxy (MOVPE). The layers of a blue light-emitting diode (LED), that includes five InGaN quantum wells, were grown on a patterned GaN template on a sapphire substrate. In order to elucidate the contribution of vapor-phase diffusion of group-III precursors to the in-plane modulation of luminescence wavelength, the width of a stripe selective growth area was 60 mu m that is sufficiently larger than the typical surface diffusion length, with the mask width varied stepwise between 30 and 240 mu m. The distribution of the luminescence wavelength from the MQWs was measured with cathode luminescence (CL) across the stripe growth area. The peak wavelength ranged between 420 and 500 nm. The peak shifted to longer wavelengths and became broader as the measured point approached to the mask edge. Such a shift in the peak wavelength exhibited parabolic profile in the growth area and the wider mask shifted the entire peak positions to longer wavelengths. These trends clearly indicate that the vapor-phase diffusion play a dominant role in the in-plane modulation of the luminescence wavelength in the SA-MOVPE of InGaN MQWs, when the size of a growth area and/or the mask width exceeds approximately 10 mu m. (C) 2009 Published by Elsevier B.V.

    DOI: 10.1016/j.jcrysgro.2009.01.014

  • Kinetic analysis of INASP by metalorganic vapor phase epitaxy selective area growth technique

    Yunpeng Wang, Yunpeng Wang, Haizheng Song, Haizheng Song, Masakazu Sugiyama, Masakazu Sugiyama, Yoshiaki Nakano, Yoshiaki Nakano, Yukihiro Shimogaki

    Japanese Journal of Applied Physics   48   2009年4月 (   ISSN:0021-4922 )

     詳細

    The fundamental kinetics of metal organic vapor phase epitaxy (MOVPE) related ternary compound-InAsP has been systematically investigated by analyzing selective area growth. The overall surface reaction rate constant (k s-overal) of indium species in this material system is successfully obtained, it shows a composition dependence in which ks-overall increases with the amount of P in InAs1-xPx . On the basis of binary kinetics of InAs and InP, ks-overall can be estimated from the linear combination of the surface reaction rate constant (ks) in the As site and the ks in the P site. Result shows that the linear estimation of ks-overall is consistent with experimental data, which indicates that the incorporations of indium species in the P and As sites should be almost independent of each other. These results revealed that the real surface process of the ternary material system provides significant information and fundamental concepts for further modeling of more complicated quaternary compounds, such as InGaAsP. ©2009 The Japan Society of Applied Physics.

    DOI: 10.1143/JJAP.48.041102

  • III‐V化合物半導体高効率太陽電池のエピタキシャル成長技術

    杉山正和, 霜垣幸浩, 岡田至崇, 中野義昭

    応用物理学関係連合講演会講演予稿集   56th ( 0 )   126   2009年3月

     詳細

    記述言語:日本語  

  • III‐V nMOSFET実現に向けた埋め込み再成長n+InP S/D形成

    竹中充, 武田浩司, 星井拓也, 種村拓夫, 杉山正和, 中野義昭, 高木信一

    応用物理学関係連合講演会講演予稿集   56th ( 2 )   875   2009年3月

     詳細

    記述言語:日本語  

  • InGaAsP/InPビーム曲折型1×N光スイッチに関する研究

    藤村拓也, 種村拓夫, 中野義昭

    応用物理学関係連合講演会講演予稿集   56th ( 3 )   1238   2009年3月

     詳細

    記述言語:日本語  

  • InGaNのMOVPE選択成長における水素添加の効果

    塩田倫也, 富田祐貴, 杉山正和, 霜垣幸浩, 中野義昭

    応用物理学関係連合講演会講演予稿集   56th ( 1 )   403   2009年3月

     詳細

    記述言語:日本語  

  • MOVPEにおけるin situ H2S処理およびAl終端処理によるGaAsの表面酸化抑制

    寺田雄紀, 出浦桃子, 霜垣幸浩, 杉山正和, 中野義昭

    応用物理学関係連合講演会講演予稿集   56th ( 1 )   372   2009年3月

     詳細

    記述言語:日本語  

  • MOVPEによる砒素気相ドーピングのGe面方位依存性

    竹中充, 杉山正和, 中野義昭, 高木信一

    応用物理学関係連合講演会講演予稿集   56th ( 2 )   886   2009年3月

     詳細

    記述言語:日本語  

  • MZI双安定レーザーによる静的全光フリップ・フロップ動作の実証

    武田浩司, 竹中充, 種村拓夫, 中野義昭

    応用物理学関係連合講演会講演予稿集   56th ( 3 )   1234   2009年3月

     詳細

    記述言語:日本語  

  • MOVPE装置を用いたAs気相ドーピングによるGe p‐n接合の電気特性

    森井清仁, 中根了昌, 杉山正和, 中野義昭, 竹中充, 高木信一

    応用物理学関係連合講演会講演予稿集   56th ( 2 )   887   2009年3月

     詳細

    記述言語:日本語  

  • Pulse Injection MOVPEによるInGaNの結晶性向上

    谷和樹, 杉山正和, 中野義昭, 霜垣幸浩

    応用物理学関係連合講演会講演予稿集   56th ( 1 )   402   2009年3月

     詳細

    記述言語:日本語  

  • フォトニックネットワークを支える半導体集積光デバイス技術

    中野義昭, 種村拓夫

    応用物理学関係連合講演会講演予稿集   56th ( 0 )   23   2009年3月

     詳細

    記述言語:日本語  

  • マルチスケールの成長速度分布を用いたGaN MOVPE反応メカニズムの考察

    安河内諭, 塩田倫也, 杉山正和, 霜垣幸浩, 中野義昭

    応用物理学関係連合講演会講演予稿集   56th ( 1 )   397   2009年3月

     詳細

    記述言語:日本語  

  • 多段階成長を用いた微小領域選択MOVPEにおけるSi上InGaAsの面内均一化

    出浦桃子, 近藤佳幸, 星井拓也, 竹中充, 高木信一, 中野義昭, 杉山正和

    応用物理学関係連合講演会講演予稿集   56th ( 1 )   369   2009年3月

     詳細

    記述言語:日本語  

  • 基板貼り合わせによるSi基板上メタルS/D III‐V‐OI MOSFETの動作実証

    横山正史, 安田哲二, 山田永, 福原昇, 秦雅彦, 杉山正和, 中野義昭, 竹中充, 高木信一

    応用物理学関係連合講演会講演予稿集   56th ( 2 )   909   2009年3月

     詳細

    記述言語:日本語  

  • 微小領域選択MOVPEにおけるSi上InAs核発生の成長条件依存性

    近藤佳幸, 出浦桃子, 竹中充, 高木信一, 中野義昭, 杉山正和

    応用物理学関係連合講演会講演予稿集   56th ( 1 )   369   2009年3月

     詳細

    記述言語:日本語  

  • 選択MOVPEにおけるInGaN量子井戸発光波長シフトに対する井戸厚の効果

    富田祐貴, 塩田倫也, 霜垣幸浩, 中野義昭, 杉山正和

    応用物理学関係連合講演会講演予稿集   56th ( 1 )   403   2009年3月

     詳細

    記述言語:日本語  

  • 非対称Rib型導波路構造を有するInGaAsP/InP偏波コンバータ

    雨宮智宏, 高橋元悟, 武田浩司, 胆後昭男, 種村拓夫, 中野義昭

    応用物理学関係連合講演会講演予稿集   56th ( 3 )   1240   2009年3月

     詳細

    記述言語:日本語  

  • 1X2シリコンフォトニックMEMSスイッチの作製方法の検討

    肥後昭男, 石塚彰, 中野義昭

    電気学会全国大会講演論文集   2009 ( 3 )   200   2009年3月

     詳細

    記述言語:日本語  

  • SiフォトニックMEMS gratingの作製方法についての検討

    石塚彰, 肥後昭男, 中野義昭

    電気学会全国大会講演論文集   2009 ( 3 )   199   2009年3月

     詳細

    記述言語:日本語  

  • フェーズアレイ型半導体光パケットスイッチの研究開発(フォトニックネットワーク関連技術,一般)

    種村 拓夫, ソーアンジ イプラーヒム・ムラット, 武田 浩司, 中野 義昭

    電子情報通信学会技術研究報告. PN, フォトニックネットワーク   108 ( 476 )   19 - 22   2009年3月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    次世代の大容量光パケットスイッチング(OPS:optical packet switching)ネットワークや光インターコネクションシステムにおいて,ナノ秒オーダーの応答速度と広帯域な波長透過特性を持つ大規模光スイッチは,不可欠な技術である.我々は,ポート数の拡張に対して優位なスケーラビリティが期待される光フェーズアレイ型1×N光スイッチに注目し,研究を進めてきた.これまでに,InP基板上にモノリシック集積した1×5および1×8光スイッチを試作し,100mA以下の注入電流による低消費電力かつ高速な光スイッチング動作の実証に成功した.さらに,320Gbps(40Gbps×8)波長多重光パケットスイッチ実験を行い,OPSシステムへの適用可能性を実証したので報告する.

  • 共有波長資源配分比可変型ハイブリッド光交換ノードの設計と実装(フォトニックネットワーク関連技術,一般)

    高木 衛, 李 慧, 渡部 克弥, 今泉 英明, 種村 拓夫, 中野 義昭, 森川 博之

    電子情報通信学会技術研究報告. PN, フォトニックネットワーク   108 ( 476 )   35 - 40   2009年3月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    従来のアプリケーションに加え,高精細動画配信のようなアプリケーションが一般的となる将来のインターネットでは,(1)低消費電力,(2)広帯域性,(3)QoS保証を含む多様なアプリケーションの支援,の3要件を満たすネットワークアーキテクチャが必要となる.これらの要件を満たす技術として,パケット毎の処理を省くことで超低消費電力を実現する光パス交換に基づくネットワークアーキテクチャが広く研究されている.しかし,インタラクティブ性の高いアプリケーションでは,光パス確立時間や帯域利用効率が問題となる.一方,光パケット交換技術を用いたネットワークアーキテクチャではQoS保証が困難であるため上述した要件を満たすことができない.このような観点から筆者らは,より低消費電力化の実現が可能な多波長光パケット交換と光パス交換を組み合わせたハイブリッド型光ネットワークアーキテクチャを検討している.本ネットワークでは光パス/多波長光パケットで共有している波長資源の配分比率を動的に変更することにより,帯域利用効率を向上させることができる.本稿では,本ネットワークを実現するハイブリッド光交換ノードについて述べるとともに,交換ノードの実証を目的として行った400Gb/sハイブリッド光交換ノードの実証実験について述べる.

  • 共有波長資源配分比可変型ハイブリッド光交換ノードの設計と実装

    高木衛, LI Hui, 渡部克弥, 今泉英明, 種村拓夫, 中野義昭, 森川博之

    電子情報通信学会技術研究報告   108 ( 476(PN2008 84-103) )   35 - 40   2009年3月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    従来のアプリケーションに加え,高精細動画配信のようなアプリケーションが一般的となる将来のインターネットでは,(1)低消費電力,(2)広帯域性,(3)QoS保証を含む多様なアプリケーションの支援,の3要件を満たすネットワークアーキテクチャが必要となる.これらの要件を満たす技術として,パケット毎の処理を省くことで超低消費電力を実現する光パス交換に基づくネットワークアーキテクチャが広く研究されている.しかし,インタラクティブ性の高いアプリケーションでは,光パス確立時間や帯域利用効率が問題となる.一方,光パケット交換技術を用いたネットワークアーキテクチャではQoS保証が困難であるため上述した要件を満たすことができない.このような観点から筆者らは,より低消費電力化の実現が可能な多波長光パケット交換と光パス交換を組み合わせたハイブリッド型光ネットワークアーキテクチャを検討している.本ネットワークでは光パス/多波長光パケットで共有している波長資源の配分比率を動的に変更することにより,帯域利用効率を向上させることができる.本稿では,本ネットワークを実現するハイブリッド光交換ノードについて述べるとともに,交換ノードの実証を目的として行った400Gb/sハイブリッド光交換ノードの実証実験について述べる.

  • Zn and s doping in GaAs selective area growth by metal-organic vapor phase epitaxy

    Haizheng Song, Yunpeng Wang, Masakazu Sugiyama, Masakazu Sugiyama, Yoshiaki Nakano, Yoshiaki Nakano, Yukihiro Shimogaki

    Japanese Journal of Applied Physics   48   031101   2009年3月 (   ISSN:0021-4922 )

     詳細

    The surface reaction rate constant (ks) is one of the most important parameters in metal-organic vapor phase epitaxy (MOVPE), since it affects the growth rate and the composition of the epitaxial layer in selective area growth (SAG). It is possible to predict the properties of the epitaxial layer from the value of ks. The value of ks can be extracted through a two-dimensional numerical simulation of SAG, and it strongly depends on growth conditions. In this paper, zinc and sulfur doping in GaAs SAG are studied. It is shown that the ks of GaAs is independent of dopant input pressure at low Zn or S pressure. This implies that under these conditions, the growth rate will not be affected by doping. Furthermore, the database of ks values based on undoped GaAs-SAG can be used directly in doping processes. The ks value is reduced when Zn input pressure is of the same order of magnitude as Ga partial pressure. When the mask width is less than 100 μm, the masks will not influence ks. However, the ks value is reduced when 200μm masks are used due to the excessive enhancement of trimethylgallium local pressure, which leads to a nonlinear reaction mode. The dopant concentration in SAG samples has been measured using secondary ion mass spectroscopy (SIMS). The effect of mask width on dopant incorporation can be simplified as the effect from Ga-species pressure. Zn concentration in the epitaxial layer is nearly independent of Ga partial pressure or the mask width. S concentration increases with increasing Ga partial pressure. These phenomena can be understood from their doping behavior and reactions. With increasing mask width, S incorporation in GaAs slightly increases, but is reduced when 200 μm masks are used. This reduction may be caused by the adsorption of S species on SiO2 masks. © 2009 The Japan Society of Applied Physics.

    DOI: 10.1143/JJAP.48.031101

  • Pulse injection MOVPEによるInGaNの結晶性向上

    谷和樹, 杉山正和, 中野義昭, 霜垣幸浩

    化学工学会年会研究発表講演要旨集(CD-ROM)   74th   A113 - 7   2009年2月

     詳細

    記述言語:日本語   出版者・発行元:公益社団法人 化学工学会  

    DOI: 10.11491/scej.2009.0.7.0

  • Si上InGaAsの微小領域選択MOVPEにおける横方向成長促進と均一性向上

    出浦桃子, 星井拓也, 竹中充, 高木信一, 中野義昭, 杉山正和

    化学工学会年会研究発表講演要旨集(CD-ROM)   74th   A114   2009年2月

     詳細

    記述言語:日本語  

  • Integrated broadband 1x8 optical phased-array switch with low polarization sensitivity and nanosecond-scale reconfiguration time (フォトニックネットワーク)

    Soganci Ibrahim Murat, 種村 拓夫, 中野 義昭

    電子情報通信学会技術研究報告   108 ( 417 )   59 - 63   2009年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:英語   出版者・発行元:電子情報通信学会  

  • 広帯域1×8光集積フェーズアレイ型スイッチの作製と評価 : 低偏波依存・ナノ秒スイッチング特性の検証

    ソーアンジ イブラーヒム ムラット, 種村 拓夫, 中野 義昭

    電気学会研究会資料. EMT, 電磁界理論研究会   2009 ( 1 )   59 - 63   2009年1月

     詳細

    記述言語:英語  

  • λアクセスネットワークにおけるテラビット級LAN多重アクセス技術(光ノード,光インタフェース,波長多重ネットワーク技術,光ノード技術,WDM技術,光LAN技術,光信号処理技術,一般)

    今泉 英明, 渡部 克弥, 種村 拓夫, 中野 義昭, 森川 博之

    電子情報通信学会技術研究報告. OCS, 光通信システム   108 ( 423 )   43 - 48   2009年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    本論文では,λアクセスネットワークにおけるテラビット級LAN多重アクセス技術として,多波長光パケット交換と光回線交換を組み合わせたハイブリッド型光ネットワーク技術について述べる.本ネットワークにおいては,広域な通信またはQoS保証が必要な通信には光回線交換を適用し,ローカルエリアの通信には光パスで使っていない波長群を多波長光パケット交換を用いる.本論文では,本ネットワークを実現する上で必要となる要素技術に関する検証実験として,Feed-Forward型衝突回避機構付き320Gbps多波長光パケット交換検証実験および共有波長資源配分比可変型400Gbpsハイブリッド光交換ノード検証実験に関して報告を行う.

  • λアクセスネットワークにおけるテラビット級LAN多重アクセス技術

    今泉英明, 渡部克弥, 種村拓夫, 中野義昭, 森川博之

    電子情報通信学会技術研究報告   108 ( 423(OCS2008 106-122) )   43 - 48   2009年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    本論文では,λアクセスネットワークにおけるテラビット級LAN多重アクセス技術として,多波長光パケット交換と光回線交換を組み合わせたハイブリッド型光ネットワーク技術について述べる.本ネットワークにおいては,広域な通信またはQoS保証が必要な通信には光回線交換を適用し,ローカルエリアの通信には光パスで使っていない波長群を多波長光パケット交換を用いる.本論文では,本ネットワークを実現する上で必要となる要素技術に関する検証実験として,Feed-Forward型衝突回避機構付き320Gbps多波長光パケット交換検証実験および共有波長資源配分比可変型400Gbpsハイブリッド光交換ノード検証実験に関して報告を行う.

  • 広帯域1×8光集積フェーズアレイ型スイッチの作製と評価 : 低偏波依存・ナノ秒スイッチング特性の検証(フォトニックNWシステム・デバイス,フォトニック結晶・ファイバとその応用,光集積回路,光導波路素子,光スイッチング,導波路解析,及び一般)

    ソーアンジ イブラーヒム ムラット, 種村 拓夫, 中野 義昭

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   108 ( 419 )   59 - 63   2009年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    将来の大容量光パケットスイッチングネットワークの実現に向けて,1×8InP/InGaAsP集積光フェーズアレイスイッチの設計・作製・評価を行った.電流注入型位相変調アレイを用いることで,Cバンド全域(1520-1580nm)にわたり,TE/TM両偏波状態について良好なスイッチング特性を実証した.偏波依存損失は2.2dB以下,波長依存性は2.5dBであり,100mA以下の注入電流で17.7dBの平均消光比が得られた.動的スイッチング実験から,スイッチング応答時間は6ns以下であると見積もられた.

  • 広帯域1×8光集積フェーズアレイ型スイッチの作製と評価 : 低偏波依存・ナノ秒スイッチング特性の検証(フォトニックNWシステム・デバイス,フォトニック結晶・ファイバとその応用,光集積回路,光導波路素子,光スイッチング,導波路解析,及び一般)

    ソーアンジ イブラーヒム ムラット, 種村 拓夫, 中野 義昭

    電子情報通信学会技術研究報告. OPE, 光エレクトロニクス   108 ( 418 )   59 - 63   2009年1月 (   ISSN:0913-5685 )

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    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    将来の大容量光パケットスイッチングネットワークの実現に向けて,1×8 InP/InGaAsP集積光フェーズアレイスイッチの設計・作製・評価を行った.電流注入型位相変調アレイを用いることで,Cバンド全域(1520-1580nm)にわたり,TE/TM両偏波状態について良好なスイッチング特性を実証した.偏波依存損失は2.2dB以下,波長依存性は2.5dBであり,100mA以下の注入電流で17.7dBの平均消光比が得られた.動的スイッチング実験から,スイッチング応答時間は6ns以下であると見積もられた.

  • 広帯域1×8光集積フェーズアレイ型スイッチの作製と評価 : 低偏波依存・ナノ秒スイッチング特性の検証(フォトニックNWシステム・デバイス,フォトニック結晶・ファイバとその応用,光集積回路,光導波路素子,光スイッチング,導波路解析,及び一般)

    ソーアンジ イブラーヒム ムラット, 種村 拓夫, 中野 義昭

    電子情報通信学会技術研究報告. PN, フォトニックネットワーク   108 ( 417 )   59 - 63   2009年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    将来の大容量光パケットスイッチングネットワークの実現に向けて,1×8InP/InGaAsP集積光フェーズアレイスイッチの設計・作製・評価を行った.電流注入型位相変調アレイを用いることで,Cバンド全域(1520-1580nm)にわたり,TE/TM両偏波状態について良好なスイッチング特性を実証した.偏波依存損失は2.2dB以下,波長依存性は2.5dBであり,100mA以下の注入電流で17.7dBの平均消光比が得られた.動的スイッチング実験から,スイッチング応答時間は6ns以下であると見積もられた.

  • Competitive kinetics model to explain surface segregation of indium during InGaP growth by using metal organic vapor phase epitaxy

    Takayuki Nakano, Takayuki Nakano, Tomonari Shioda, Tomonari Shioda, Masakazu Sugiyama, Masakazu Sugiyama, Yoshiaki Nakano, Yoshiaki Nakano, Yukihiro Shimogaki, Yukihiro Shimogaki

    Japanese Journal of Applied Physics   48   2009年1月 (   ISSN:0021-4922 )

     詳細

    An InGaP layer grown by metal organic vapor phase epitaxy (MOVPE) often has an In-rich region within ∼5 nm from the top of the layer. This surface segregation degrades the Interface abruptness of InGaP/GaAs systems, which is attractive for high-performance devices such as high electron mobility transistors (HEMTs). This segregation in lattice-matched InGaP/GaAs systems can be explained by considering a &quot;subsurface&quot; in which a surface adsorption layer controls the composition of grown epitaxial layers. In this study, the existence of a subsurface during MOVPE growth of InGaP was experimentally confirmed through kinetic analysis involving a flow modulation method. The kinetic parameters of a subsurface model, such as adsorption and desorption rate constants of each species, were estimated based on experimental data obtained from flow modulation, and then used to successfully explain the In surface segregation in InGaP-MOVPE. © 2009 The Japan Society of Applied Physics.

    DOI: 10.1143/JJAP.48.011101

  • Process design of the pulse injection method for low-temperature metal organic vapor phase epitaxial growth of AlN at 800 °C

    Jung Seung Yang, Jung Seung Yang, Hassanet Sodabanlu, Ichitaro Waki, Masakazu Sugiyama, Masakazu Sugiyama, Yoshiaki Nakano, Yoshiaki Nakano, Yukihiro Shimogaki, Yukihiro Shimogaki

    Journal of Crystal Growth   311   383 - 388   2009年1月 (   ISSN:0022-0248 )

     詳細

    The pulse injection (PI) growth method in which trimethylaluminium (TMAl) and NH3 are alternately supplied was used to grow AlN layer at 800 °C. It was found that the process parameters in the PI method such as TMAl supply time (τTMAl), TMAl partial pressure (PTMAl), and 1st H2 purge time (τH1) had great influence on the crystal quality and surface morphology. Control of the growth rate to 1 monolayer (ML)/cycle resulted in highly improved crystal quality. 3.91×10-4 mbar of PTMAl and 1 s of τH1 were also found to be very effective in realizing high crystal quality showing narrow (0 0 0 2) and (1 0 1̄ 2) full-width at half-maximum (FWHM) values confirmed by high-resolution X-ray diffraction (HRXRD) rocking curve measurement. This is because the agglomeration of initial AlN islands and adducts formation by the gas-phase reaction could be suppressed under these conditions. According to the second ion mass spectroscopy (SIMS) measurement for the AlN layer grown by PI method (PI-AlN), the impurities concentrations of hydrogen, carbon, and oxygen showed several times lower levels than those of AlN layer grown by the conventional continuous method (C-AlN) at same 800 °C. Moreover, the impurities concentrations in PI-AlN layer were almost same with those of C-AlN grown at 1240 °C. It clearly shows the effectiveness of PI method in enhancing reduction reaction by NH3. © 2008 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jcrysgro.2008.10.086

  • 特集に寄せて(<特集>エレクトロニクス実装技術の現状と展望)

    中野 義昭

    エレクトロニクス実装学会誌   12 ( 1 )   1 - 1   2009年1月 (   ISSN:1343-9677 )

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    記述言語:日本語   出版者・発行元:社団法人エレクトロニクス実装学会  

    DOI: 10.5104/jiep.12.14

  • 特集 エレクトロニクス実装技術の現状と展望—Special articles: Electronics packaging technology: the current status and perspective

    中野義昭

    エレクトロニクス実装学会誌 = Journal of the Japan Institute of Electronics Packaging   12 ( 1 )   1 - 45   2009年1月 (   ISSN:1343-9677 )

     詳細

    記述言語:日本語   出版者・発行元:東京 : エレクトロニクス実装学会  

    記事種別: 特集

    その他リンク: https://ndlsearch.ndl.go.jp/books/R000000004-I9786446

  • AlPおよびH2Sを用いたGaAs表面のMOVPE反応炉内in situパッシベーション

    寺田 雄紀, 出浦 桃子, 霜垣 幸浩, 杉山 正和, 中野 義昭

    化学工学会 研究発表講演要旨集   2009 ( 0 )   11 - 11   2009年

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    記述言語:日本語   出版者・発行元:The Society of Chemical Engineers, Japan  

    DOI: 10.11491/scej.2009f.0.11.0

  • In Situ monitoring of the initial nucleation for the formation of uniform InGaAs micro-discs on Si

    M. Deura, Y. Kondo, T. Hoshii, M. Takenaka, S. Takagi, Y. Nakano, M. Sugiyama

    ECS Transactions   25 ( 8 )   521 - 524   2009年

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  • In-situ表面異方性観察を用いたGaAs MOVPE成長の高原料効率化

    鬼塚 隆祐, 杉山 正和, 中野 義昭

    化学工学会 研究発表講演要旨集   2009 ( 0 )   12 - 12   2009年

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    記述言語:日本語   出版者・発行元:The Society of Chemical Engineers, Japan  

    DOI: 10.11491/scej.2009f.0.12.0

  • In situ growth monitoring of strain-balanced quantum-well solar cells by metal-organic vapor phase epitaxy

    M. Sugiyama, Y. P. Wang, M. Deura, R. Onitsuka, Y. Nakano

    Proceedings of 34th IEEE Photovoltaic Specialists Conference   001879-001882   2009年

  • InGaN/GaN選択MOVPEによる可視光発光波長シフトのメカニズム

    杉山 正和, 塩田 倫也, 富田 祐貴, 霜垣 幸浩, 中野 義昭

    化学工学会 研究発表講演要旨集   2009 ( 0 )   1 - 1   2009年

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    記述言語:日本語   出版者・発行元:The Society of Chemical Engineers, Japan  

    DOI: 10.11491/scej.2009f.0.1.0

  • MOVPE微小領域選択成長におけるSi上InAs核発生の成長条件依存性

    近藤 佳幸, 出浦 桃子, 竹中 充, 高木 信一, 中野 義昭, 杉山 正和

    化学工学会 研究発表講演要旨集   2009 ( 0 )   13 - 13   2009年

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    記述言語:日本語   出版者・発行元:The Society of Chemical Engineers, Japan  

    DOI: 10.11491/scej.2009f.0.13.0

  • Pulse Injection MOVPEによるInGaNの結晶性向上

    谷 和樹, 杉山 正和, 中野 義昭, 霜垣 幸浩

    化学工学会 研究発表講演要旨集   2009 ( 0 )   7 - 7   2009年

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    記述言語:日本語   出版者・発行元:The Society of Chemical Engineers, Japan  

    DOI: 10.11491/scej.2009.0.7.0

  • Uniform InGaAs micro-discs on Si by micro-channel selective-area MOVPE

    M. Deura, T. Hoshii, M. Takenaka, S. Takagi, Y. Nakano, M. Sugiyama

    Proceedings of 21st IEEE International Conference on Indium Phosphide & Related Materials   48 - 51   2009年

  • Si上InGaAsの微小領域選択MOVPEにおける横方向成長促進と均一性向上

    出浦 桃子, 星井 拓也, 竹中 充, 高木 信一, 中野 義昭, 杉山 正和

    化学工学会 研究発表講演要旨集   2009 ( 0 )   8 - 8   2009年

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    記述言語:日本語   出版者・発行元:The Society of Chemical Engineers, Japan  

    DOI: 10.11491/scej.2009.0.8.0

  • マルチスケール解析によるGaN MOVPE反応メカニズムの検討

    杉山 正和, 安河内 諭, 塩田 倫也, 霜垣 幸浩, 中野 義昭

    化学工学会 研究発表講演要旨集   2009 ( 0 )   14 - 14   2009年

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    記述言語:日本語   出版者・発行元:The Society of Chemical Engineers, Japan  

    DOI: 10.11491/scej.2009f.0.14.0

  • マッハ・ツェンダ干渉器型双安定レーザの全光フリップ・フロップ動作実証

    武田浩司, 竹中充, 種村拓夫, 財津優, 中野義昭

    電子情報通信学会技術研究報告   109 ( 245(LQE2009 66-106) )   121 - 124   2009年 (   ISSN:0913-5685 )

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    記述言語:英語  

  • マッハ・ツェンダ干渉器型双安定レーザの全光フリップ・フロップ動作実証(超高速伝送・変復調・分散補償技術,超高速光信号処理技術,広帯域光増幅・WDM技術,受光デバイス,高光出力伝送技術,一般,(ECOC報告))

    武田 浩司, 竹中 充, 種村 拓夫, 財津 優, 中野 義昭

    電子情報通信学会技術研究報告. OCS, 光通信システム   109 ( 243 )   121 - 124   2009年 (   ISSN:0913-5685 )

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    近年様々な光信号処理用の素子が開発されており,中でも全光フリップ・フロップはそのメモリ機能や信号再生への応用から実現が期待されている.今回我々はマッハ・ツェンダ干渉器型双安定レーザの全光フリップ・フロップ動作実証を報告する.これは2つの発振モード間の双安定性を利用しており,2モードが利得領域において100%の重なりを持つことによる高速動作,低駆動エネルギー,また可飽和吸収体による広帯域動作を狙ったものである.DBRを集積することで単一モード発振が得られ,2つの発振モード間でSRフリップ・フロップ動作が実証された.67pJ以下の光パルスで駆動し,立ち上がり,立下りの時間はそれぞれ320,68ps以下であった.

  • マッハ・ツェンダ干渉器型双安定レーザの全光フリップ・フロップ動作実証(超高速伝送・変復調・分散補償技術,超高速光信号処理技術,広帯域光増幅・WDM技術,受光デバイス,高光出力伝送技術,一般,(ECOC報告))

    武田 浩司, 竹中 充, 種村 拓夫, 財津 優, 中野 義昭

    電子情報通信学会技術研究報告. OPE, 光エレクトロニクス   109 ( 244 )   121 - 124   2009年 (   ISSN:0913-5685 )

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    近年様々な光信号処理用の素子が開発されており,中でも全光フリップ・フロップはそのメモリ機能や信号再生への応用から実現が期待されている.今回我々はマッハ・ツェンダ干渉器型双安定レーザの全光フリップ・フロップ動作実証を報告する.これは2つの発振モード間の双安定性を利用しており,2モードが利得領域において100%の重なりを持つことによる高速動作,低駆動エネルギー,また可飽和吸収体による広帯域動作を狙ったものである.DBRを集積することで単一モード発振が得られ,2つの発振モード間でSRフリップ・フロップ動作が実証された.67pJ以下の光パルスで駆動し,立ち上がり,立下りの時間はそれぞれ320,68ps以下であった.

  • 微小領域選択MOVPEにおけるSi上InGaAsの原子構造と光学特性解析

    出浦 桃子, 近藤 佳幸, 星井 拓也, 竹中 充, 高木 信一, 中野 義昭, 杉山 正和

    化学工学会 研究発表講演要旨集   2009 ( 0 )   2 - 2   2009年

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    記述言語:日本語   出版者・発行元:The Society of Chemical Engineers, Japan  

    DOI: 10.11491/scej.2009f.0.2.0

  • 量子井戸太陽電池用InGaAs/GaAsP歪み補償量子井戸成長のin situモニタリング

    杉山正和, WANG Yunpeng, 出浦桃子, 杉田憲一, 中野義昭

    結晶成長国内会議予稿集   39th   213   2009年 (   ISSN:0385-6275 )

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    記述言語:日本語  

  • 共有波長資源配分比可変型400Gb/sハイブリッド光交換ノードの実証実験(フォトニックネットワークシステム,光ルーティング,ブロードバンドアプリケーション,一般)

    高木 衛, 李 慧, 渡部 克弥, 今泉 英明, 種村 拓夫, 中野 義昭, 森川 博之

    電子情報通信学会技術研究報告. PN, フォトニックネットワーク   108 ( 360 )   47 - 52   2008年12月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    従来のアプリケーションに加え,高精細動画配信のようなアプリケーションが一般的となる将来のインターネットでは,(1)低消費電力,(2)広帯域性,(3)QoS保証を含む多様なアプリケーションの支援,の3要件を満たすネットワークアーキテクチャが必要となる.これらの要件を満たす技術として,パケット毎の処理を省くことで超低消費電力を実現する光パス交換に基づくネットワークアーキテクチャが広く研究されている.しかし,インタラクティブ性の高いアプリケーションでは,光パス確立時間や帯域利用効率が問題となる.一方,光パケット交換技術を用いたネットワークアーキテクチャではQoS保証が困難であるため上述した要件を満たすことができない.このような観点から筆者らは,より低消費電力化の実現が可能な多波長光パケット交換と光パス交換を組み合わせたハイブリッド型光ネットワークアーキテクチャを検討している.本ネットワークでは光パス/多波長光パケットで共有している波長資源の配分比率を動的に変更することにより,帯域利用効率を向上させることができる.本稿では,本ネットワークの特徴である共有波長資源の動的な配分比率変更を実現する400Gb/sハイブリッド光交換ノードの実証実験について述べる。

  • 共有波長資源配分比可変型400Gb/sハイブリッド光交換ノードの実証実験

    高木衛, LI Hui, 渡部克弥, 今泉英明, 種村拓夫, 中野義昭, 森川博之

    電子情報通信学会技術研究報告   108 ( 360(PN2008 32-41) )   47 - 52   2008年12月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    従来のアプリケーションに加え,高精細動画配信のようなアプリケーションが一般的となる将来のインターネットでは,(1)低消費電力,(2)広帯域性,(3)QoS保証を含む多様なアプリケーションの支援,の3要件を満たすネットワークアーキテクチャが必要となる.これらの要件を満たす技術として,パケット毎の処理を省くことで超低消費電力を実現する光パス交換に基づくネットワークアーキテクチャが広く研究されている.しかし,インタラクティブ性の高いアプリケーションでは,光パス確立時間や帯域利用効率が問題となる.一方,光パケット交換技術を用いたネットワークアーキテクチャではQoS保証が困難であるため上述した要件を満たすことができない.このような観点から筆者らは,より低消費電力化の実現が可能な多波長光パケット交換と光パス交換を組み合わせたハイブリッド型光ネットワークアーキテクチャを検討している.本ネットワークでは光パス/多波長光パケットで共有している波長資源の配分比率を動的に変更することにより,帯域利用効率を向上させることができる.本稿では,本ネットワークの特徴である共有波長資源の動的な配分比率変更を実現する400Gb/sハイブリッド光交換ノードの実証実験について述べる。

  • 選択領域有機金属気相成長の気相拡散効果を用いたInGaN系多波長発光素子の検討(窒化物半導体光・電子デバイス・材料,及び関連技術,及び一般)

    塩田 倫也, 富田 祐貴, 杉山 正和, 霜垣 幸浩, 中野 義昭

    電子情報通信学会技術研究報告. CPM, 電子部品・材料   108 ( 322 )   13 - 16   2008年11月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    有機金属気相成長(MOVPE:Metal-Organic Vapor Phase Epitaxy)の選択成長(Selective Area Growth)を用いることで,1回の結晶成長で同一基板面内に異なる組成(波長,歪み)や膜厚を持つ多波長発光素子を作成することが可能である.本論文では大きな気相拡散効果を生じる広幅(&gt;10μm)なマスクに着目し,マスク周辺における膜厚・発光波長分布を調べた.一方で,選択成長を数理化した気相拡散モデルを用い,製膜種の気相拡散の振る舞いを定量的に解析した.その結果InGaN成長条件下においては,GaN製膜種の拡散長が10μm程度と短く,大きな面内膜厚変調を生じることを見出した.更に,マスク上でのGaNの核発生を抑制するために水素添加を提案し,良好な選択性を達成した.選択性向上により気相拡散の効果が促進され,バルクInGaNの成長増大係数の最大値4.8,発光波長54nm(組成比換算11%)シフトを得た.

  • 選択領域有機金属気相成長の気相拡散効果を用いたInGaN系多波長発光素子の検討

    塩田倫也, 富田祐貴, 杉山正和, 霜垣幸浩, 中野義昭

    電子情報通信学会技術研究報告   108 ( 321(ED2008 152-183) )   13 - 16   2008年11月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    有機金属気相成長(MOVPE:Metal-Organic Vapor Phase Epitaxy)の選択成長(Selective Area Growth)を用いることで,1回の結晶成長で同一基板面内に異なる組成(波長,歪み)や膜厚を持つ多波長発光素子を作成することが可能である.本論文では大きな気相拡散効果を生じる広幅(>10μm)なマスクに着目し,マスク周辺における膜厚・発光波長分布を調べた.一方で,選択成長を数理化した気相拡散モデルを用い,製膜種の気相拡散の振る舞いを定量的に解析した.その結果InGaN成長条件下においては,GaN製膜種の拡散長が10μm程度と短く,大きな面内膜厚変調を生じることを見出した.更に,マスク上でのGaNの核発生を抑制するために水素添加を提案し,良好な選択性を達成した.選択性向上により気相拡散の効果が促進され,バルクInGaNの成長増大係数の最大値4.8,発光波長54nm(組成比換算11%)シフトを得た.

  • 選択領域有機金属気相成長の気相拡散効果を用いたInGaN系多波長発光素子の検討(窒化物半導体光・電子デバイス・材料,及び関連技術,及び一般)

    塩田 倫也, 富田 祐貴, 杉山 正和, 霜垣 幸浩, 中野 義昭

    電子情報通信学会技術研究報告. ED, 電子デバイス   108 ( 321 )   13 - 16   2008年11月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    有機金属気相成長(MOVPE:Metal-Organic Vapor Phase Epitaxy)の選択成長(Selective Area Growth)を用いることで,1回の結晶成長で同一基板面内に異なる組成(波長,歪み)や膜厚を持つ多波長発光素子を作成することが可能である.本論文では大きな気相拡散効果を生じる広幅(&gt;10μm)なマスクに着目し,マスク周辺における膜厚・発光波長分布を調べた.一方で,選択成長を数理化した気相拡散モデルを用い,製膜種の気相拡散の振る舞いを定量的に解析した.その結果InGaN成長条件下においては,GaN製膜種の拡散長が10μm程度と短く,大きな面内膜厚変調を生じることを見出した.更に,マスク上でのGaNの核発生を抑制するために水素添加を提案し,良好な選択性を達成した.選択性向上により気相拡散の効果が促進され,バルクInGaNの成長増大係数の最大値4.8,発光波長54nm(組成比換算11%)シフトを得た.

  • 選択領域有機金属気相成長の気相拡散効果を用いたInGaN系多波長発光素子の検討(窒化物半導体光・電子デバイス・材料,及び関連技術,及び一般)

    塩田 倫也, 富田 祐貴, 杉山 正和, 霜垣 幸浩, 中野 義昭

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   108 ( 323 )   13 - 16   2008年11月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    有機金属気相成長(MOVPE:Metal-Organic Vapor Phase Epitaxy)の選択成長(Selective Area Growth)を用いることで,1回の結晶成長で同一基板面内に異なる組成(波長,歪み)や膜厚を持つ多波長発光素子を作成することが可能である.本論文では大きな気相拡散効果を生じる広幅(&gt;10μm)なマスクに着目し,マスク周辺における膜厚・発光波長分布を調べた.一方で,選択成長を数理化した気相拡散モデルを用い,製膜種の気相拡散の振る舞いを定量的に解析した.その結果InGaN成長条件下においては,GaN製膜種の拡散長が10μm程度と短く,大きな面内膜厚変調を生じることを見出した.更に,マスク上でのGaNの核発生を抑制するために水素添加を提案し,良好な選択性を達成した.選択性向上により気相拡散の効果が促進され,バルクInGaNの成長増大係数の最大値4.8,発光波長54nm(組成比換算11%)シフトを得た.

  • In situ passivation of GaAs surface with aluminum oxide with MOVPE

    Yuki Terada, Momoko Deura, Yukihiro Shimogaki, Masakazu Sugiyama, Masakazu Sugiyama, Yoshiaki Nakano, Yoshiaki Nakano

    Journal of Crystal Growth   310   4808 - 4812   2008年11月 (   ISSN:0022-0248 )

     詳細

    In situ passivation of GaAs surface subsequent to the growth in a metalorganic vapor phase epitaxy (MOVPE) reactor has been made possible using trimethylaluminum (TMAl). The adsorption layer on GaAs, presumably consisting of aluminum and the decomposition product of TMAl, was oxidized upon exposure to air to form thin AlOx layer. TMAl supply of only 0.5 monolayer completely prevented the oxidation of As on the surface, as confirmed by XPS. The passivation layer mostly prevented the oxidation of As upon O2 annealing for 5 min at 250 °C. For the successful passivation, complete desorption of excess As on the GaAs surface was essential prior to the injection of TMAl. Otherwise, AlAs layer was formed and arsenic oxide was inevitably formed. The optimum length of H2 purge to desorb As was determined to be 2 min with in situ surface monitoring using reflectance anisotropy spectroscopy (RAS). This passivation method, combined with the succeeding deposition of Al2O3 as a gate dielectric in a different reactor, provides the GaAs/gate interface without As-oxide. The method is applicable to the MOVPE growth of electron channel layers containing As for III-V metal-insulator-semiconductor field effect transistors (MISFETs). © 2008 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jcrysgro.2008.09.018

  • Kinetic analysis of surface adsorption layer for InGaAsP-related binary materials using in situ RAS

    Momoko Deura, Yukihiro Shimogaki, Yoshiaki Nakano, Yoshiaki Nakano, Masakazu Sugiyama, Masakazu Sugiyama

    Journal of Crystal Growth   310   4736 - 4740   2008年11月 (   ISSN:0022-0248 )

     詳細

    Kinetic analysis of the surface adsorption layer on GaAs, InAs, InP, and GaP surfaces during metalorganic vapor phase epitaxy (MOVPE) was performed by in situ monitoring of the temporal behavior of surface reconstructions using reflectance anisotropy spectroscopy (RAS). When the flow of group-III sources was switched on/off, the transient RA signal exhibited two time constants t0 and t1 in response to the generation/extinction of the adsorption layer. It was considered that t0, when the supply of group-III sources was started, corresponds to the adsorption of group-III atoms from the gas phase to the adsorption layer, and that t1, when the supply of group-III sources was terminated, is associated with the incorporation of adsorbed group-III atoms to the crystal. The rate constant of adsorption, 1/t0, was approximately 2 s-1 for all surfaces except for GaP. The rate constant of incorporation, 1/t1, ranged from 0.1 to 10 s-1. It was found that 1/t1 for the As-containing materials was faster than that for P-related materials, and 1/t1 for In-containing materials was faster than that for the Ga-containing materials. For the As-containing materials, 1/t1 agreed with the incorporation rate constants of adsorbed group-III precursors obtained using the Langmuir-Hinshelwood model by the analysis of selective-area growth (SAG). © 2008 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jcrysgro.2008.08.019

  • Non-linear surface reaction kinetics in GaAs selective area MOVPE

    Haizheng Song, Yunpeng Wang, Masakazu Sugiyama, Yoshiaki Nakano, Yukihiro Shimogaki

    Journal of Crystal Growth   310   4731 - 4735   2008年11月 (   ISSN:0022-0248 )

     詳細

    Two-dimensional numerical simulation on growth rate non-uniformity of selective area growth (SAG) in metal-organic vapor phase epitaxy (MOVPE) is an effective method to examine the surface reaction kinetics, which is difficult to be investigated in mass-transport limited growth regime. Non-linear kinetic analysis based on the Langmuir-Hinshelwood mechanism is revealing the intrinsic process in MOVPE. Two important kinetic parameters, surface reaction rate constant (ks n) and adsorption equilibrium coefficient (K), were successfully extracted from GaAs SAG-MOVPE on (1 0 0) exact and 2° off misoriented substrates in the temperature range of 520-600 °C. The activation energy is 126-127 kJ/mol for ks n, and -53 to -59 kJ/mol for K. The surface coverage of Ga-species during the GaAs growth can be estimated from these kinetic parameters as 0.05-0.60. There is a critical temperature (Tc) for the conversion of GaAs surface reaction mode. When growth temperature is higher than Tc, non-linear kinetic can be simplified as linear kinetic mode which is easier in calculation. Tc was found to be 600 °C for (1 0 0) exact GaAs substrate and 650 °C for 2° off substrate. © 2008 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jcrysgro.2008.06.061

  • Nonlinear kinetic analysis of InP and InAs metal organic vapor phase epitaxy by selective area growth technique

    Yunpeng Wang, Yunpeng Wang, Haizheng Song, Haizheng Song, Masakazu Sugiyama, Masakazu Sugiyama, Yoshiaki Nakano, Yoshiaki Nakano, Yukihiro Shimogaki, Yukihiro Shimogaki

    Japanese Journal of Applied Physics   47   8269 - 8274   2008年11月 (   ISSN:0021-4922 )

     詳細

    Kinetic analysis based on the combination of selective area metal organic vapor phase epitaxy (SA-MOVPE) and twodimensional numerical simulation can be used to extract real surface kinetics, which usually remain unknown because the growth rate of deposited film is limited by diffusional mass-transfer rate in SA-MOVPE. To explain previously observed concentration dependency on surface reaction rate constant and to establish a more reliable model for the surface process, nonlinear surface kinetics were used in this study to analyze SA-MOVPE process for InP and InAs. Surface reaction rate constant (ks n) and adsorption equilibrium constant (Κ) of a film precursor in a nonlinear model was successfully extracted in SA-MOVPE for InP and InAs. Results show that a nonlinear model that takes adsorption-desorption equilibrium into account can well explain the concentration dependency and can be potentially used in predicting growth behavior regardless of mask width or partial pressure influence. © 2008 The Japan Society of Applied Physics.

    DOI: 10.1143/JJAP.47.8269

  • SiNを上部クラッドとするGaN/AlN光導波路のサブバンド間吸収(超高速伝送・変復調・分散補償技術,超高速光信号処理技術,広帯域光増幅・WDM技術、受光デバイス,高光出力伝送技術,一般,(ECOC報告))

    飯塚 紀夫, 清水 俊匡, 吉田 春彦, 真名垣 暢人, ハッサネット ソダーバンル, 杉山 正和, 中野 義昭

    電子情報通信学会技術研究報告. OPE, 光エレクトロニクス   108 ( 260 )   113 - 116   2008年10月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    GaN/AlNサブバンド間遷移スイッチへの応用を目的として、AlNを下部クラッド層、GaNをコア層とし中央に量子井戸層を設け、SiNを上部クラッドとする導波路構造でサブバンド間吸収を実現した。同時に、SiNをクラッドとしたスポットサイズ変換を実証した。この結果は、GaN/AlNサブバンド間遷移光スイッチの動作エネルギー低減可能性、および、集積光デバイスへの適用可能性を示唆するものでもある。

  • SiNを上部クラッドとするGaN/AlN光導波路のサブバンド間吸収

    飯塚紀夫, 清水俊匡, 吉田春彦, 真名垣暢人, HASSANET Sodabanlu, 杉山正和, 中野義昭

    電子情報通信学会技術研究報告   108 ( 261(LQE2008 59-95) )   113 - 116   2008年10月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    GaN/AlNサブバンド間遷移スイッチへの応用を目的として、AlNを下部クラッド層、GaNをコア層とし中央に量子井戸層を設け、SiNを上部クラッドとする導波路構造でサブバンド間吸収を実現した。同時に、SiNをクラッドとしたスポットサイズ変換を実証した。この結果は、GaN/AlNサブバンド間遷移光スイッチの動作エネルギー低減可能性、および、集積光デバイスへの適用可能性を示唆するものでもある。

  • SiNを上部クラッドとするGaN/AlN光導波路のサブバンド間吸収(超高速伝送・変復調・分散補償技術,超高速光信号処理技術,広帯域光増幅・WDM技術、受光デバイス,高光出力伝送技術,一般,(ECOC報告))

    飯塚 紀夫, 清水 俊匡, 吉田 春彦, 真名垣 暢人, ハッサネット ソダーバンル, 杉山 正和, 中野 義昭

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   108 ( 261 )   113 - 116   2008年10月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    GaN/AlNサブバンド間遷移スイッチへの応用を目的として、AlNを下部クラッド層、GaNをコア層とし中央に量子井戸層を設け、SiNを上部クラッドとする導波路構造でサブバンド間吸収を実現した。同時に、SiNをクラッドとしたスポットサイズ変換を実証した。この結果は、GaN/AlNサブバンド間遷移光スイッチの動作エネルギー低減可能性、および、集積光デバイスへの適用可能性を示唆するものでもある。

  • SiNを上部クラッドとするGaN/AlN光導波路のサブバンド間吸収(超高速伝送・変復調・分散補償技術,超高速光信号処理技術,広帯域光増幅・WDM技術、受光デバイス,高光出力伝送技術,一般,(ECOC報告))

    飯塚 紀夫, 清水 俊匡, 吉田 春彦, 真名垣 暢人, ハッサネット ソダーバンル, 杉山 正和, 中野 義昭

    電子情報通信学会技術研究報告. OCS, 光通信システム   108 ( 259 )   113 - 116   2008年10月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    GaN/AlNサブバンド間遷移スイッチへの応用を目的として、AlNを下部クラッド層、GaNをコア層とし中央に量子井戸層を設け、SiNを上部クラッドとする導波路構造でサブバンド間吸収を実現した。同時に、SiNをクラッドとしたスポットサイズ変換を実証した。この結果は、GaN/AlNサブバンド間遷移光スイッチの動作エネルギー低減可能性、および、集積光デバイスへの適用可能性を示唆するものでもある。

  • BS-9-4 テラビット級LANにおけるハイブリッド型光ネットワークアーキテクチャ(BS-9.テラビットLAN/MANを実現する光波長アクセス技術,シンポジウムセッション)

    今泉 英明, 渡部 克弥, 種村 拓夫, 中野 義昭, 森川 博之

    電子情報通信学会ソサイエティ大会講演論文集   2008 ( 2 )   "S - 79"-"S-80"   2008年9月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • B-12-5 動的な波長資源割当可能なハイブリッド光交換ノードの実証実験(B-12.フォトニックネットワーク,一般セッション)

    高木 衛, 渡部 克弥, 今泉 英明, 種村 拓夫, 中野 義昭, 森川 博之

    電子情報通信学会ソサイエティ大会講演論文集   2008 ( 2 )   247 - 247   2008年9月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • C-3-54 光パケットスイッチング用InP集積フェーズアレイ型1×N光スイッチ(C-3.光エレクトロニクス,一般セッション)

    種村 拓夫, ソーアンジ イブラヒム ムラット, 武田 浩司, 中野 義昭

    電子情報通信学会ソサイエティ大会講演論文集   2008 ( 1 )   176 - 176   2008年9月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • DBR‐MMI‐BLD全光フリップ・フロップの波長可変特性

    武田浩司, 竹中充, 種村拓夫, 中野義昭

    応用物理学会学術講演会講演予稿集   69th ( 3 )   1047   2008年9月

     詳細

    記述言語:日本語  

  • MOVPE選択成長InGaNの気相拡散モデルによる解析

    塩田倫也, 杉山正和, 霜垣幸浩, 中野義昭

    応用物理学会学術講演会講演予稿集   69th ( 1 )   330   2008年9月

     詳細

    記述言語:日本語  

  • アルミニウム原料を用いたGaAs(001)面のMOVPE内in situパッシベーション

    寺田雄紀, 出浦桃子, 霜垣幸浩, 杉山正和, 中野義昭

    応用物理学会学術講演会講演予稿集   69th ( 1 )   288   2008年9月

     詳細

    記述言語:日本語  

  • 微小領域選択MOVPEにおけるSi上InGaAsの横方向成長過程

    出浦桃子, 星井拓也, 竹中充, 高木信一, 中野義昭, 杉山正和

    応用物理学会学術講演会講演予稿集   69th ( 1 )   288   2008年9月

     詳細

    記述言語:日本語  

  • 微小領域選択MOVPEにおけるSi上InGaAsのGa組成と結晶構造

    出浦桃子, 星井拓也, 山本剛久, 幾原雄一, 竹中充, 高木信一, 中野義昭, 杉山正和

    応用物理学会学術講演会講演予稿集   69th ( 1 )   288   2008年9月

     詳細

    記述言語:日本語  

  • 選択MOVPEにおけるInGaN量子井戸発光波長シフトの起源

    富田祐貴, 塩田倫也, 杉山正和, 霜垣幸浩, 中野義昭

    応用物理学会学術講演会講演予稿集   69th ( 1 )   330   2008年9月

     詳細

    記述言語:日本語  

  • InGaAsP系MOVPEにおける表面吸着層速度過程のin situ観察とモデル化

    出浦桃子, 霜垣幸浩, 中野義昭, 杉山正和

    化学工学会秋季大会研究発表講演要旨集(CD-ROM)   40th   T302 - 799   2008年8月

     詳細

    記述言語:日本語   出版者・発行元:公益社団法人 化学工学会  

    DOI: 10.11491/scej.2008f.0.799.0

  • MOVPEにおける酸化アルミニウムによるGaAs(001)面のin situパッシベーション

    寺田雄紀, 出浦桃子, 霜垣幸浩, 杉山正和, 中野義昭

    化学工学会秋季大会研究発表講演要旨集(CD-ROM)   40th   T313 - 807   2008年8月

     詳細

    記述言語:日本語   出版者・発行元:公益社団法人 化学工学会  

    DOI: 10.11491/scej.2008f.0.807.0

  • InGaAsP系MOVPEにおける反応炉形状依存性

    鬼塚隆祐, 杉山正和, 霜垣幸浩, 中野義昭

    化学工学会秋季大会研究発表講演要旨集(CD-ROM)   40th   T301 - 798   2008年8月

     詳細

    記述言語:日本語   出版者・発行元:公益社団法人 化学工学会  

    DOI: 10.11491/scej.2008f.0.798.0

  • MOVPE選択成長におけるInN成長速度分布の解析

    塩田倫也, 杉山正和, 霜垣幸浩, 中野義昭

    化学工学会秋季大会研究発表講演要旨集(CD-ROM)   40th   T307 - 804   2008年8月

     詳細

    記述言語:日本語   出版者・発行元:公益社団法人 化学工学会  

    DOI: 10.11491/scej.2008f.0.804.0

  • 選択成長InGaN量子井戸における気相拡散の効果

    富田祐貴, 塩田倫也, 杉山正和, 霜垣幸浩, 中野義昭

    化学工学会秋季大会研究発表講演要旨集(CD-ROM)   40th   T306 - 803   2008年8月

     詳細

    記述言語:日本語   出版者・発行元:公益社団法人 化学工学会  

    DOI: 10.11491/scej.2008f.0.803.0

  • 分布ブラッグ反射鏡を用いた全光フリップ・フロップの波長可変特性

    武田浩司, 竹中充, 種村拓夫, 中野義昭

    電子情報通信学会技術研究報告   108 ( 183(PN2008 14-24) )   61 - 64   2008年8月 (   ISSN:0913-5685 )

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    我々はこれまで提案実証してきた全光フリップ・フロップは、分布ブラッグ反射鏡を用いることによりモノリシック集積化が可能である。この全光フリップ・フロップを複数個集積化した際に、その出力光が同じだと後に分離することができず、また出力光同士での干渉が起こってしまう。今回この問題を回避するために、我々はDBR領域に電流を注入することによって発振波長を変化させることに成功した。可変範囲全域にわたり消光比24.7dB以上、副モード抑圧比21.5dB以上の単一モード発振を得ることができ、その可変範囲は短波側に3.1nmであった。連続光を注入することにより、可変範囲全域で静的なフリップ・フロップ動作が得られている。

  • 分布ブラッグ反射鏡を用いた全光フリップ・フロップの波長可変特性

    武田 浩司, 竹中 充, 種村 拓夫, 中野 義昭

    電子情報通信学会技術研究報告. PN, フォトニックネットワーク   108 ( 183 )   61 - 64   2008年8月 (   ISSN:0913-5685 )

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    我々はこれまで提案実証してきた全光フリップ・フロップは、分布ブラッグ反射鏡を用いることによりモノリシック集積化が可能である。この全光フリップ・フロップを複数個集積化した際に、その出力光が同じだと後に分離することができず、また出力光同士での干渉が起こってしまう。今回この問題を回避するために、我々はDBR領域に電流を注入することによって発振波長を変化させることに成功した。可変範囲全域にわたり消光比24.7dB以上、副モード抑圧比21.5dB以上の単一モード発振を得ることができ、その可変範囲は短波側に3.1nmであった。連続光を注入することにより、可変範囲全域で静的なフリップ・フロップ動作が得られている。

  • 2A1-F03 パリレン保護によるSi細線MEMS変調素子の作製方法の検討(MEMSとナノテクノロジー)

    肥後 昭男, 高橋 一浩, 中田 宗樹, 中野 義昭, 藤田 博之, 年吉 洋

    ロボティクス・メカトロニクス講演会講演概要集   2008   "2A1 - F03(1)"-"2A1-F03(2)"   2008年6月

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    記述言語:日本語   出版者・発行元:一般社団法人日本機械学会  

    We have already reported the design and fabrication process of photonic MEMS actuators for optical attenuators integrated with a silicon photonic wire waveguide. This paper presents the tolerability of parylene against HF vapor and BPM TE mode simulation of silicon wire waveguide with parylene upper clad in order to combine conventional photonic IC technology.

  • パリレン保護によるSi細線MEMS変調素子の作製方法の検討

    肥後昭男, 高橋一浩, 中田宗樹, 中野義昭, 藤田博之, 年吉洋

    日本機械学会ロボティクス・メカトロニクス講演会講演論文集(CD-ROM)   2008   ROMBUNNO.2A1-F03   2008年6月

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    記述言語:日本語  

  • GaN/AlNサブバンド間遷移光スイッチの吸収飽和特性改善

    飯塚紀夫, 清水俊匡, KUMTORNKITTIKUL C, 杉山正和, 中野義昭

    応用物理学関係連合講演会講演予稿集   55th ( 3 )   1247   2008年3月

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    記述言語:日本語  

  • MOVPEにおけるin situ硫黄被覆によるGaAs(001)表面の酸化抑制

    寺田雄紀, 出浦桃子, 杉山正和, 霜垣幸浩, 中野義昭

    応用物理学関係連合講演会講演予稿集   55th ( 2 )   649   2008年3月

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    記述言語:日本語  

  • MOVPE選択成長の反応モデリング:気相拡散モデルによるGaN選択成長の解析

    塩田倫也, 富田祐貴, 杉山正和, 霜垣幸浩, 中野義昭

    応用物理学関係連合講演会講演予稿集   55th ( 1 )   391   2008年3月

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    記述言語:日本語  

  • MOVPE法によるInGaAs/InAlAs FACQWの作製と位相変調特性評価

    長谷川亮, 雨宮智宏, 荒川太郎, 種村拓夫, 清水大雅, 杉山正和, 多田邦雄, 中野義昭

    応用物理学関係連合講演会講演予稿集   55th ( 3 )   1233   2008年3月

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    記述言語:日本語  

  • 伸張歪を用いた偏波無依存MMI‐BLD全光フリップ・フロップ動作

    金間泰樹, 武田浩司, 竹中充, 種村拓夫, 中野義昭

    応用物理学関係連合講演会講演予稿集   55th ( 3 )   1243   2008年3月

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    記述言語:日本語  

  • 微小領域選択成長によるSi(111)基板上へのInAsピラーの形成

    星井拓也, 出浦桃子, 杉山正和, 中根了昌, 菅原聡, 竹中充, 中野義昭, 高木信一

    応用物理学関係連合講演会講演予稿集   55th ( 1 )   360   2008年3月

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    記述言語:日本語  

  • 微小領域選択MOVPEにおけるSi上InGaAsの横方向成長に対するGa組成の影響

    出浦桃子, 星井拓也, 杉山正和, 中根了昌, 竹中充, 菅原聡, 高木信一, 中野義昭

    応用物理学関係連合講演会講演予稿集   55th ( 1 )   359   2008年3月

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    記述言語:日本語  

  • 微小領域選択MOVPEにより作製したSi(111)面上InGaAsの構造解析

    杉山正和, 出浦桃子, 星井拓也, 山本剛久, 幾原雄一, 田尻寛男, 坂田修身, 木村滋, 中根了昌, 竹中充, 菅原聡, 高木信一, 中野義昭

    応用物理学関係連合講演会講演予稿集   55th ( 1 )   359   2008年3月

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    記述言語:日本語  

  • 選択成長InGaN量子井戸における気相拡散による発光波長シフト

    富田祐貴, 塩田倫也, 杉山正和, 霜垣幸浩, 中野義昭

    応用物理学関係連合講演会講演予稿集   55th ( 1 )   391   2008年3月

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    記述言語:日本語  

  • 高性能Ge nMOSFETに向けたMOVPEによる砒素気相ドーピング

    竹中充, 杉山正和, 中野義昭, 高木信一

    応用物理学関係連合講演会講演予稿集   55th ( 2 )   924   2008年3月

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    記述言語:日本語  

  • PLZT型光スイッチを用いたフィードフォワード型入力バッファ付き320Gb/s多波長光パケット交換の実証実験(フォトニックネットワーク関連技術,一般)

    高木 衛, 渡部 克弥, 町田 啓太, 今泉 英明, 種村 拓夫, 中野 義昭, 森川 博之

    電子情報通信学会技術研究報告. PN, フォトニックネットワーク   107 ( 544 )   25 - 28   2008年3月 (   ISSN:0913-5685 )

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    本稿では,衝突回避機構を備えた多波長光パケット交換ノードの実現性を示すことを目的とし,PLZT型光スイッチを用いた320Gb/s(40Gb/sx8)多波長光パケット交換の実証実験を行う.多波長光パケット交換方式は,単一ペイロードを多波長にわたって符号化し,波長依存性の無い光スイッチで一括交換する方式である.このため,光デバイス数が波長数に依存しないシステムの構築が可能となる.本稿で行った実証実験の結果,衝突回避機構付き多波長光パケット交換ノードの実現性を確認した.

  • PLZT型光スイッチを用いたフィードフォワード型入力バッファ付き320Gb/s多波長光パケット交換の実証実験

    高木衛, 渡部克弥, 町田啓太, 今泉英明, 種村拓夫, 中野義昭, 森川博之

    電子情報通信学会技術研究報告   107 ( 544(PN2007 73-94) )   25 - 28   2008年3月 (   ISSN:0913-5685 )

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    本稿では,衝突回避機構を備えた多波長光パケット交換ノードの実現性を示すことを目的とし,PLZT型光スイッチを用いた320Gb/s(40Gb/sx8)多波長光パケット交換の実証実験を行う.多波長光パケット交換方式は,単一ペイロードを多波長にわたって符号化し,波長依存性の無い光スイッチで一括交換する方式である.このため,光デバイス数が波長数に依存しないシステムの構築が可能となる.本稿で行った実証実験の結果,衝突回避機構付き多波長光パケット交換ノードの実現性を確認した.

  • 伸張歪MQWを用いたMMI-BLDの偏波無依存フリップ・プロップ動作(フォトニックネットワーク関連技術,一般)

    金間 泰樹, 武田 浩司, 竹中 充, 種村 拓夫, 中野 義昭

    電子情報通信学会技術研究報告. PN, フォトニックネットワーク   107 ( 544 )   81 - 85   2008年3月 (   ISSN:0913-5685 )

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    将来のフォトニックネットワークにおいて、全光で動作する高速な光メモリー、および光バッファの実現が切望されている。筆者らはこれまで多モード干渉(MMI)を用いた双安定レーザー(BLD)によって全光フリップ・フロップを作製し、その動作と、光パケットスイッチングへの適用性を検証してきた。本報告においては、MMI-BLD全光フリップ・フロップの入射光偏波無依存動作を目標とし、レーザーの活性層であるInGaAsP多重量子井戸(MQW)に伸張歪を導入することにより、10nsの光パルスによる320ns周期での偏波無依存フリップ・フロップ動作を実現したので報告する。

  • 光ネットワークに向けた半導体集積光デバイス―デジタルフォトニクスに向けて―

    中野義昭

    電子情報通信学会技術研究報告   107 ( 544(PN2007 73-94) )   47 - 52   2008年3月 (   ISSN:0913-5685 )

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    記述言語:日本語  

  • 光ネットワークに向けた半導体集積光デバイス : デジタルフォトニクスに向けて(特別セッション,フォトニックネットワーク関連技術,一般)

    中野 義昭

    電子情報通信学会技術研究報告. PN, フォトニックネットワーク   107 ( 544 )   47 - 52   2008年3月 (   ISSN:0913-5685 )

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    本稿では,フォトニックネットワークの構築に資する目的で筆者のグループが行っている半導体光集積デバイスおよび光集積回路の研究開発について紹介する.特に,最近注力している半導体導波路型光アイソレータ,同素子の分布帰還型レーザとの集積化,全光スイッチ回路,全光フリップフロップ,およびこれらを応用した全光パケットスイッチング実験について論じる.

  • 多波長光パケット交換を用いたパス/パケット混在型光ネットワークにおける交換ノードの設計と実装(フォトニックネットワーク関連技術,一般)

    渡部 克弥, 高木 衛, 今泉 英明, 種村 拓夫, 中野 義昭, 森川 博之

    電子情報通信学会技術研究報告. PN, フォトニックネットワーク   107 ( 544 )   11 - 16   2008年3月 (   ISSN:0913-5685 )

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    アプリケーションの多様化により,将来のインターネットには広帯域かつ複数の異なる通信サービスクラスを提供する機構が求められている.これまでの複数の転送パラダイムを組み合わせたハイブリッド光ネットワーク機構では,通信サービスクラスは2レベルに限定される上,各波長ごとに独立して光パケット交換処理を行うため波長数×ポート数に比例した数の光デバイスを必要とした.これらの問題に対し,筆者らは多波長光パケット交換と波長パス交換を組み合わせたハイブリッド型光ネットワークを検討している.本ネットワークは,(1)経路ごとの通信品質の違いを利用し,複数の異なる通信サービスクラスの提供が可能,(2)多波長光パケット交換の特性から,光パケット交換に関しては波長数増減の影響を受けずに交換ノードを構成可能,(3)転送パラダイム間の波長数比率を動的に変更可能,といった特徴を持つ.本稿では,本ネットワークの基盤技術となる&quot;波長パス交換と多波長光パケット交換を同時に提供可能な交換ノード&quot;の設計と実装について述べる.

  • 多波長光パケット交換を用いたパス/パケット混在型光ネットワークにおける交換ノードの設計と実装

    渡部克弥, 高木衛, 今泉英明, 種村拓夫, 中野義昭, 森川博之

    電子情報通信学会技術研究報告   107 ( 544(PN2007 73-94) )   11 - 16   2008年3月 (   ISSN:0913-5685 )

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    記述言語:日本語  

  • B-12-3 92kmフィールド伝送系におけるPLZT光バーストスイッチノードの実環境試験(B-12. フォトニックネットワーク,一般セッション)

    種村 拓夫, アルアミン アブドゥラー, 中野 義昭

    電子情報通信学会総合大会講演論文集   2008 ( 2 )   417 - 417   2008年3月

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • B-12-16 ハイブリッド型光ネットワークを実現する交換ノードの設計と実装(B-12. フォトニックネットワーク,一般セッション)

    渡部 克弥, 高木 衛, 今泉 英明, 種村 拓夫, 中野 義昭, 森川 博之

    電子情報通信学会総合大会講演論文集   2008 ( 2 )   430 - 430   2008年3月

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • 92kmフィールド伝送系におけるPLZT光バーストスイッチノードの実環境試験

    種村拓夫, AL AMIN Abdullah, 中野義昭

    電子情報通信学会大会講演論文集   2008 ( 2 )   417 - 417   2008年3月 (   ISSN:1349-1369 )

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • PLZT型光スイッチを用いた衝突回避機構付き320Gb/s多波長光パケット交換の検証

    高木衛, 渡部克弥, 町田啓太, 今泉英明, 種村拓夫, 中野義昭, 森川博之

    電子情報通信学会大会講演論文集   2008   423   2008年3月 (   ISSN:1349-1369 )

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    記述言語:日本語  

  • PLZT導波路偏向型光マトリックススイッチを用いた光バーストスイッチサブシステム(交換)

    尾中 寛, 甲斐 雄高, 瀧田 裕, 菅間 明夫, 青木 重憲, 佐藤 桂輔, アルアミン アブドゥッラー, 種村 拓夫, 中野 義昭

    電子情報通信学会論文誌. B, 通信   91 ( 3 )   227 - 238   2008年3月 (   ISSN:1344-4697 )

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    高速で拡張性の高いPLZT導波路偏向型光スイッチを用いた光バーストスイッチサブシステムを開発した.光バーストスイッチングノード内での光出力一定制御(ALC)を実現する光可変減衰(VOA)機能を実装し,ALC制御を行った場合でも8μs以下のスイッチングを実現するとともに,40Gbit/sにおける良好な伝送特性を確認した.

  • PLZT導波路偏向型光マトリックススイッチを用いた光バーストスイッチサブシステム

    尾中寛, 甲斐雄高, 瀧田裕, 菅間明夫, 青木重憲, 佐藤桂輔, AL AMIN Abdullah, 種村拓夫, 中野義昭

    電子情報通信学会論文誌 B   J91-B ( 3 )   227 - 238   2008年3月 (   ISSN:1344-4697 )

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    高速で拡張性の高いPLZT導波路偏向型光スイッチを用いた光バーストスイッチサブシステムを開発した.光バーストスイッチングノード内での光出力一定制御(ALC)を実現する光可変減衰(VOA)機能を実装し,ALC制御を行った場合でも8μs以下のスイッチングを実現するとともに,40Gbit/sにおける良好な伝送特性を確認した.

  • 特集に寄せて(<特集1>光回路実装技術の標準化動向)

    中野 義昭

    エレクトロニクス実装学会誌   11 ( 2 )   115 - 115   2008年3月 (   ISSN:1343-9677 )

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    記述言語:日本語   出版者・発行元:社団法人エレクトロニクス実装学会  

  • 特集に寄せて

    中野 義昭

    エレクトロニクス実装学会誌   11 ( 2 )   115 - 115   2008年3月 (   ISSN:1343-9677 )

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    記述言語:日本語   出版者・発行元:The Japan Institute of Electronics Packaging  

    DOI: 10.5104/jiep.11.115

  • 微小領域選択成長によるSi上III/V化合物半導体層の形成

    出浦桃子, 星井拓也, 杉山正和, 中根了昌, 菅原聡, 竹中充, 高木信一, 中野義昭

    化学工学会年会研究発表講演要旨集   73rd   202 - 208   2008年2月

     詳細

    記述言語:日本語   出版者・発行元:公益社団法人 化学工学会  

    DOI: 10.11491/scej.2008.0.208.0

  • 窒化ガリウムの選択領域有機金属気相成長における気相拡散の効果

    塩田倫也, 富田祐貴, 杉山正和, 霜垣幸浩, 中野義昭

    化学工学会年会研究発表講演要旨集   73rd   198 - 204   2008年2月

     詳細

    記述言語:日本語   出版者・発行元:公益社団法人 化学工学会  

    DOI: 10.11491/scej.2008.0.204.0

  • INTERVIEW APEX創刊で日本のプレゼンス向上を!!--東京大学 中野義昭教授に聞く

    中野 義昭

    オプトロニクス   27 ( 2 )   75 - 78   2008年2月 (   ISSN:0286-9659 )

     詳細

    記述言語:日本語   出版者・発行元:オプトロニクス社  

  • MMI双安定レーザー型全光フリップ・フロップの偏波無依存化に向けた実験的検証

    武田浩司, 金間泰樹, 竹中充, 種村拓夫, 中野義昭

    電気学会電磁界理論研究会資料   EMT-08 ( 1-36 )   163 - 167   2008年1月

     詳細

    記述言語:日本語  

  • MMI双安定レーザー型全光フリップ・フロップの偏波無依存化に向けた実験的検証

    武田 浩司, 金間 泰樹, 竹中 充, 種村 拓夫, 中野 義昭

    電気学会研究会資料. EMT, 電磁界理論研究会   2008 ( 1 )   163 - 167   2008年1月

     詳細

    記述言語:日本語  

  • フェーズアレイ型1×N半導体光スイッチの試作と理論検討

    種村拓夫, 武田浩司, 中野義昭

    電気学会電磁界理論研究会資料   EMT-08 ( 1-36 )   157 - 162   2008年1月

     詳細

    記述言語:日本語  

  • フェーズアレイ型1×N半導体光スイッチの試作と理論検討

    種村 拓夫, 武田 浩司, 中野 義昭

    電気学会研究会資料. EMT, 電磁界理論研究会   2008 ( 1 )   157 - 162   2008年1月

     詳細

    記述言語:日本語  

  • MMI双安定レーザー型全光フリップ・フロップの偏波無依存化に向けた実験的検証(フォトニックNW・デバイス,フォトニック結晶・ファイバとその応用,光集積回路,光導波路素子光スイッチング,導波路解析,および一般)

    武田 浩司, 金間 泰樹, 竹中 充, 種村 拓夫, 中野 義昭

    電子情報通信学会技術研究報告. OPE, 光エレクトロニクス   107 ( 465 )   163 - 167   2008年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    将来のフオトニックネットワークにおいて、全光で動作する高速な光メモリー、および光バッフアの実現が切望されている。筆者らはこれまで多モード干渉(MMI)を用いた双安定レーザー(BLD)によって全光フリップ・フロップを作製し、その動作と、光パケットスイッチングへの適用性を検証してきた。本報告においては、MMI-BLD全光フリップ・フロップの入射光偏波無依存動作を目標とし、レーザーの活性層であるInGaAsP多重量子井戸(MQW)に伸張歪を導入することにより、偏波無依存フリップ・フロップ動作の原理検証実験を行ったので報告する。

  • MMI双安定レーザー型全光フリップ・フロップの偏波無依存化に向けた実験的検証(フォトニックNW・デバイス,フォトニック結晶・ファイバとその応用,光集積回路,光導波路素子,光スイッチング,導波路解析,および一般)

    武田 浩司, 金間 泰樹, 竹中 充, 種村 拓夫, 中野 義昭

    電子情報通信学会技術研究報告. PN, フォトニックネットワーク   107 ( 464 )   163 - 167   2008年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    将来のフォトニックネットワークにおいて、全光で動作する高速な光メモリー、および光バッファの実現が切望されている。筆者らはこれまで多モード干渉(MMI)を用いた双安定レーザー(BLD)によって全光フリップ・フロップを作製し、その動作と、光パケットスイッチングへの適用性を検証してきた。本報告においては、MMI-BLD全光フリップ・フロップの入射光偏波無依存動作を目標とし、レーザーの活性層であるInGaAsP多重量子井戸(MQW)に伸張歪を導入することにより、偏波無依存フリップ・プロップ動作の原理検証実験を行ったので報告する。

  • MMI双安定レーザー型全光フリップ・フロップの偏波無依存化に向けた実験的検証(フォトニックNW・デバイス,フォトニック結晶・ファイバとその応用,光集積回路,光導波路素子光スイッチング,導波路解析,および一般)

    武田 浩司, 金間 泰樹, 竹中 充, 種村 拓夫, 中野 義昭

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   107 ( 466 )   163 - 167   2008年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    将来のフオトニックネットワークにおいて、全光で動作する高速な光メモリー、および光バッフアの実現が切望されている。筆者らはこれまで多モード干渉(MMI)を用いた双安定レーザー(BLD)によって全光フリップ・フロップを作製し、その動作と、光パケットスイッチングへの適用性を検証してきた。本報告においては、MMI-BLD全光フリップ・フロップの入射光偏波無依存動作を目標とし、レーザーの活性層であるInGaAsP多重量子井戸(MQW)に伸張歪を導入することにより、偏波無依存フリップ・フロップ動作の原理検証実験を行ったので報告する。

  • フェーズアレイ型1×N半導体光スイッチの試作と理論検討(フォトニックNW・デバイス,フォトニック結晶・ファイバとその応用,光集積回路,光導波路素子光スイッチング,導波路解析,および一般)

    種村 拓夫, 武田 浩司, 中野 義昭

    電子情報通信学会技術研究報告. OPE, 光エレクトロニクス   107 ( 465 )   157 - 162   2008年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    大容量光パケットスイッチネットワークにおいて不可欠となる大規模光スイッチの実現に向けて,フェーズアレイ型1×N半導体光スイッチに着目し,スケーラビリティに関する理論検討と試作デバイスの設計・作製を行った.ポート数Nの増大に対して変調器の段数が変化しないため,1×2スイッチをツリー状に多段接続する構成に比べてコンパクトなデバイスが実現できる可能性を明らかにした.また,InP/InGaAsP 1×5光スイッチを試作し,1520〜1580nmの波長無依存動作と10ns以下の応答時間を実証し,波長多重光パケットスイッチノードへの適用可能性を示した.

  • フェーズアレイ型1×N半導体光スイッチの試作と理論検討(フォトニックNW・デバイス,フォトニック結晶・ファイバとその応用,光集積回路,光導波路素子,光スイッチング,導波路解析,および一般)

    種村 拓夫, 武田 浩司, 中野 義昭

    電子情報通信学会技術研究報告. PN, フォトニックネットワーク   107 ( 464 )   157 - 162   2008年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    大容量光パケットスイッチネットワークにおいて不可欠となる大規模光スイッチの実現に向けて,フェーズアレイ型1×N半導体光スイッチに着目し,スケーラビリティに関する理論検討と試作デバイスの設計・作製を行った.ポート数Nの増大に対して変調器の段数が変化しないため,1×2スイッチをツリー状に多段接続する構成に比べてコンパクトなデバイスが実現できる可能性を明らかにした.また,InP/InGaAsP 1×5光スイッチを試作し,1520〜1580nmの波長無依存動作と10ns以下の応答時間を実証し,波長多重光パケットスイッチノードへの適用可能性を示した.

  • フェーズアレイ型1×N半導体光スイッチの試作と理論検討(フォトニックNW・デバイス,フォトニック結晶・ファイバとその応用,光集積回路,光導波路素子光スイッチング,導波路解析,および一般)

    種村 拓夫, 武田 浩司, 中野 義昭

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   107 ( 466 )   157 - 162   2008年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    大容量光パケットスイッチネットワークにおいて不可欠となる大規模光スイッチの実現に向けて,フェーズアレイ型1×N半導体光スイッチに着目し,スケーラビリティに関する理論検討と試作デバイスの設計・作製を行った.ポート数Nの増大に対して変調器の段数が変化しないため,1×2スイッチをツリー状に多段接続する構成に比べてコンパクトなデバイスが実現できる可能性を明らかにした.また,InP/InGaAsP 1×5光スイッチを試作し,1520〜1580nmの波長無依存動作と10ns以下の応答時間を実証し,波長多重光パケットスイッチノードへの適用可能性を示した.

  • B-12-9 PLZT型光スイッチを用いた衝突回避機構付き320Gb/s多波長光パケット交換の検証(B-12. フォトニックネットワーク,一般セッション)

    高木 衛, 渡部 克弥, 町田 啓太, 今泉 英明, 種村 拓夫, 中野 義昭

    電子情報通信学会総合大会講演論文集   2008 ( 2 )   1641 - +   2008年

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

  • Effect of Ga content on crystal shape in micro-channel selective-area MOVPE of InGaAs on Si

    M. Deura, T. Hoshii, M. Takenaka, S. Takagi, Y. Nakano, M. Sugiyama

    Journal of Crystal Growth   310 ( 23 )   4768 - 4771   2008年

  • InGaAsP系MOVPEにおける表面吸着層速度過程のin situ観察とモデル化

    出浦 桃子, 霜垣 幸浩, 中野 義昭, 杉山 正和

    化学工学会 研究発表講演要旨集   2008 ( 0 )   799 - 799   2008年

     詳細

    記述言語:日本語   出版者・発行元:The Society of Chemical Engineers, Japan  

    DOI: 10.11491/scej.2008f.0.799.0

  • MOVPEにおける酸化アルミニウムによるGaAs(001)面のin situ パッシベーション

    寺田 雄紀, 出浦 桃子, 霜垣 幸浩, 中野 義昭, 杉山 正和

    化学工学会 研究発表講演要旨集   2008 ( 0 )   807 - 807   2008年

     詳細

    記述言語:日本語   出版者・発行元:The Society of Chemical Engineers, Japan  

    DOI: 10.11491/scej.2008f.0.807.0

  • InGaAsP系MOVPEにおける反応炉形状依存性

    鬼塚 隆祐, 杉山 正和, 霜垣 幸浩, 中野 義昭

    化学工学会 研究発表講演要旨集   2008 ( 0 )   798 - 798   2008年

     詳細

    記述言語:日本語   出版者・発行元:The Society of Chemical Engineers, Japan  

    DOI: 10.11491/scej.2008f.0.798.0

  • MOVPE選択成長におけるInN成長速度分布の解析

    塩田 倫也, 杉山 正和, 霜垣 幸浩, 中野 義昭

    化学工学会 研究発表講演要旨集   2008 ( 0 )   804 - 804   2008年

     詳細

    記述言語:日本語   出版者・発行元:The Society of Chemical Engineers, Japan  

    DOI: 10.11491/scej.2008f.0.804.0

  • フィールドテストベッドにおける5x5光バーストスイッチングノードの40Gbpsイーサーレイヤ評価(フォトニックネットワーク関連技術,一般)

    アルアミン アブドゥッラー, 種村 拓夫, 中野 義昭

    電子情報通信学会技術研究報告. PN, フォトニックネットワーク   107 ( 544 )   29 - 33   2008年 (   ISSN:0913-5685 )

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    5x5 PLZT光マトリックススイッチに基づく光バーストスイッチングノードプロトタイプの実環境での性能を確認するため、50km・2ホップのフィールドファイバを用いて光バーストスイッチングテストベッドを構築した。2つのコアノードと2つのエッジノードからなる波長多重40Gbps光バースト転送系においてイーサーフレームをエラーフリー(フレームロス率10^&lt;-6&gt;以下)転送することに成功した。更に動画ストリミングやビデオ会議などのアプリケーションに関して、フィールド実験での光バーストスイッチングによる40Gbps転送としてはじめて実証した。こららの結果により、MANの物理層に対する光バーストスイッチングの可能性の指針を得た。

    DOI: 10.1109/ECOC.2008.4729182

  • フィールドテストベッドにおける5x5光バーストスイッチングノードの40Gbpsイーサーレイヤ評価

    AL AMIN Abdullah, 種村拓夫, 中野義昭

    電子情報通信学会技術研究報告   107 ( 544(PN2007 73-94) )   29 - 33   2008年 (   ISSN:0913-5685 )

     詳細

    記述言語:英語  

    DOI: 10.1109/ECOC.2008.4729182

  • 微小領域選択成長によるSi上III/V化合物半導体層の形成

    出浦 桃子, 星井 拓也, 杉山 正和, 中根 了昌, 菅原 聡, 竹中 充, 高木 信一, 中野 義昭

    化学工学会 研究発表講演要旨集   2008 ( 0 )   208 - 208   2008年

     詳細

    記述言語:日本語   出版者・発行元:The Society of Chemical Engineers, Japan  

    DOI: 10.11491/scej.2008.0.208.0

  • 選択成長InGaN量子井戸における気相拡散の効果

    富田 祐貴, 塩田 倫也, 杉山 正和, 霜垣 幸浩, 中野 義昭

    化学工学会 研究発表講演要旨集   2008 ( 0 )   803 - 803   2008年

     詳細

    記述言語:日本語   出版者・発行元:The Society of Chemical Engineers, Japan  

    DOI: 10.11491/scej.2008f.0.803.0

  • 窒化ガリウムの選択領域有機金属気相成長における気相拡散の効果

    塩田 倫也, 富田 祐貴, 杉山 正和, 霜垣 幸浩, 中野 義昭

    化学工学会 研究発表講演要旨集   2008 ( 0 )   204 - 204   2008年

     詳細

    記述言語:日本語   出版者・発行元:The Society of Chemical Engineers, Japan  

    DOI: 10.11491/scej.2008.0.204.0

  • 選択MOVPEプロセスの解析によるInAsP成長の速度論

    王 云鵬, 宋 海政, 杉山 正和, 中野 義昭, 霜垣 幸浩

    化学工学会 研究発表講演要旨集   2008 ( 0 )   201 - 201   2008年

     詳細

    記述言語:日本語   出版者・発行元:The Society of Chemical Engineers, Japan  

    DOI: 10.11491/scej.2008.0.201.0

  • 非相反デジタル光集積回路の開発と全光ネットワークへの応用

    中野義昭

    戦略的創造研究推進事業発展研究(SORST) 平成18年度終了課題 研究終了報告書(CD-ROM)   ROMBUNNO.2.-9   2008年

     詳細

    記述言語:日本語  

  • 欧文新レター誌"Applied Physics Express (APEX)"の発刊について

    中野 義昭

    應用物理   76 ( 11 )   1221 - 1221   2007年11月 (   ISSN:0369-8009 )

     詳細

    記述言語:日本語  

  • 私の発言 APEX--研究成果を世界で競う新たな舞台

    中野 義昭

    O plus E   29 ( 11 )   1106 - 1113   2007年11月 (   ISSN:0911-5943 )

     詳細

    記述言語:日本語   出版者・発行元:新技術コミュニケ-ションズ  

  • GaN-Based High-Speed Intersubband Optical Switches

    IIZUKA Norio, KANEKO Kei, SUZUKI Nobuo, KUMTORNKITTIKUL Chaiyasit, SHIMIZU Toshimasa, SUGIYAMA Masakazu, NAKANO Yoshiaki

    Extended abstracts of the ... Conference on Solid State Devices and Materials   2007   980 - 981   2007年9月

     詳細

    記述言語:英語  

  • AlN/GaN‐MQWサブバンド間遷移導波路デバイスへのSiNxクラッドの適用

    清水俊匡, SODABANLU Hassanet, YANG Jung Seung, 杉山正和, 霜垣幸浩, 中野義昭

    応用物理学会学術講演会講演予稿集   68th ( 3 )   1190   2007年9月

     詳細

    記述言語:日本語  

  • InGaAsP/InP系MOVPE選択成長による能動素子利得の偏波制御

    塩田倫也, 杉山正和, 中野義昭

    応用物理学会学術講演会講演予稿集   68th ( 3 )   1192   2007年9月

     詳細

    記述言語:日本語  

  • InGaAsP/InPフェーズアレイ型1×5光スイッチの試作

    種村拓夫, 竹中充, ABDULLAH A. A, 武田浩司, 塩田倫也, 杉山正和, 中野義昭

    応用物理学会学術講演会講演予稿集   68th ( 3 )   194   2007年9月

     詳細

    記述言語:日本語  

  • InGaAsP選択MOVPEにおける結晶組成によるマスク効果の変化

    鬼塚隆祐, 塩田倫也, 杉山正和, 霜垣幸浩, 中野義昭

    応用物理学会学術講演会講演予稿集   68th ( 1 )   346   2007年9月

     詳細

    記述言語:日本語  

  • MOVPEにおける表面吸着層モデルに基づくGaAsおよびInPの表面反応解析

    出浦桃子, 杉山正和, 霜垣幸浩, 中野義昭

    応用物理学会学術講演会講演予稿集   68th ( 1 )   346   2007年9月

     詳細

    記述言語:日本語  

  • MOVPE法とMBE法によるInGaAs/InAlAs FACQW構造の作製と特性評価

    長谷川亮, 大江英輝, 荒川太郎, 清水大雅, 杉山正和, 多田邦雄, 中野義昭

    応用物理学会学術講演会講演予稿集   68th ( 3 )   1417   2007年9月

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    記述言語:日本語  

  • Si上III/V族化合物半導体の選択MOVPEにおける初期核発生過程の観察と制御

    出浦桃子, 杉山正和, 星井拓也, 中根了昌, 竹中充, 菅原聡, 高木信一, 中野義昭

    応用物理学会学術講演会講演予稿集   68th ( 1 )   343   2007年9月

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    記述言語:日本語  

  • スピンフォトニクスデバイス用MnSb薄膜の結晶性評価

    小川悠介, SCHALLENBERG Timo, 宗片比呂夫, 雨宮智宏, 清水大雅, 中野義昭

    応用物理学会学術講演会講演予稿集   68th ( 1 )   481   2007年9月

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    記述言語:日本語  

  • 半導体能動導波路光アイソレータの非線形な非相反伝搬特性の評価

    清水大雅, VAN PARYS Wouter, BAETS Roel, 中野義昭

    応用物理学会学術講演会講演予稿集   68th ( 3 )   1195   2007年9月

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    記述言語:日本語  

  • 微小孔を介したSi基板上InGaAs成長におけるモフォロジー向上

    星井拓也, 出浦桃子, 杉山正和, 中根了昌, 菅原聡, 竹中充, 中野義昭, 高木信一

    応用物理学会学術講演会講演予稿集   68th ( 1 )   343   2007年9月

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    記述言語:日本語  

  • 強磁性MnSbを用いた非相反損失による導波路型光アイソレータの高温特性

    雨宮智宏, 小川悠介, 清水大雅, 宗片比呂夫, 中野義昭

    応用物理学会学術講演会講演予稿集   68th ( 3 )   1195   2007年9月

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    記述言語:日本語  

  • 電子制御型光バーストスイッチングノードプロトタイプの開発

    西村公佐, AMIN A. Al, 竹中充, 種村拓也, 猪原涼, 宇佐見正士, 中野義昭

    応用物理学会学術講演会講演予稿集   68th ( 0 )   47   2007年9月

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    記述言語:日本語  

  • B-12-4 フェーズアレイ型1×N半導体光スイッチのスケーラビリティ(B-12.フォトニックネットワーク,一般講演)

    種村 拓夫, 竹中 充, アルアミン アブドゥラー, 中野 義昭

    電子情報通信学会ソサイエティ大会講演論文集   2007 ( 2 )   287 - 287   2007年8月

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • C-3-69 導波路型アイソレータのための非相反偏波コンバータの提案(パッシブデバイス,C-3.光エレクトロニクス,一般講演)

    雨宮 智宏, 種村 拓夫, 中野 義昭

    電子情報通信学会ソサイエティ大会講演論文集   2007 ( 1 )   192 - 192   2007年8月

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • 導波路型アイソレータのための非相反偏波コンバータの提案

    雨宮智宏, 種村拓夫, 中野義昭

    電子情報通信学会大会講演論文集   2007   192   2007年8月 (   ISSN:1349-1369 )

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    記述言語:日本語  

  • GaAsおよびInPのMOVPEにおける表面吸着層の速度過程比較

    出浦桃子, 杉山正和, 霜垣幸浩, 中野義昭

    化学工学会秋季大会研究発表講演要旨集(CD-ROM)   39th   L303   2007年8月

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    記述言語:日本語  

  • InGaAsP系MOVPEにおけるV族吸脱着速度と固相組成

    鬼塚隆祐, 杉山正和, 霜垣幸浩, 中野義昭

    化学工学会秋季大会研究発表講演要旨集(CD-ROM)   39th   L302   2007年8月

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    記述言語:日本語  

  • MOVPEにおける表面反応速度と表面原子構造の関係

    杉山正和, 出浦桃子, 宋海政, 王云鵬, 中野義昭, 霜垣幸浩

    化学工学会秋季大会研究発表講演要旨集(CD-ROM)   39th   L306   2007年8月

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    記述言語:日本語  

  • パルスインジェクションを用いたInPのMOVPE選択成長における端面異常成長の抑制

    谷和樹, 出浦桃子, 杉山正和, 中野義昭, 霜垣幸浩

    化学工学会秋季大会研究発表講演要旨集(CD-ROM)   39th   L314   2007年8月

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    記述言語:日本語  

  • 固体物理学と産業をつないで

    田中 昭二, 神谷 武志, 田島 節子, 小原 春彦, 中野 義昭

    應用物理   76 ( 8 )   885 - 891   2007年8月 (   ISSN:0369-8009 )

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    記述言語:日本語   出版者・発行元:応用物理学会  

  • 光ネットワークデバイスと光ラベルスイッチングノードプロトタイプの開発 (特集 甦る超大容量光ファイバー通信)

    中野 義昭

    O plus E   29 ( 8 )   784 - 790   2007年8月 (   ISSN:0911-5943 )

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    記述言語:日本語   出版者・発行元:新技術コミュニケ-ションズ  

  • 甦る超大容量光ファイバー通信 光ネットワークデバイスと光ラベルスイッチングノードプロトタイプの開発~NEDOフォトニックネットワーク技術開発プロジェクト~

    中野義昭

    O plus E   ( 333 )   784-790,HYOSHI   2007年7月 (   ISSN:0911-5943 )

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    記述言語:日本語  

  • AlN/GaN‐MQWサブバンド間遷移スイッチの吸収飽和特性改善に向けた導波路作製の検討

    清水俊匡, 飯塚紀夫, 杉山正和, 中野義昭

    応用物理学関係連合講演会講演予稿集   54th ( 3 )   1268   2007年3月

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    記述言語:日本語  

  • InGaAsP/InP系MOVPE選択成長における能動素子/受動素子集積に対するマスクの最適化

    塩田倫也, 杉山正和, 中野義昭

    応用物理学関係連合講演会講演予稿集   54th ( 1 )   362   2007年3月

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    記述言語:日本語  

  • In situ RASを用いたGaAs‐MOVPEにおけるサブサーフェスの速度論的解析

    出浦桃子, 杉山正和, 中野貴之, 霜垣幸浩, 中野義昭

    応用物理学関係連合講演会講演予稿集   54th ( 1 )   360   2007年3月

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    記述言語:日本語  

  • InGaAsP系MOVPE反応炉シミュレーションにおけるV族組成の予測

    鬼塚隆祐, 出浦桃子, 塩田倫也, 杉山正和, 霜垣幸浩, 中野義昭

    応用物理学関係連合講演会講演予稿集   54th ( 1 )   361   2007年3月

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    記述言語:日本語  

  • Si基板上へのInGaAsの成長におけるInPバッファーの有効性

    星井拓也, 出浦桃子, 七条真人, 杉山正和, 菅原聡, 中野義昭, 高木信一

    応用物理学関係連合講演会講演予稿集   54th ( 1 )   365   2007年3月

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    記述言語:日本語  

  • Si上高品質III/V族化合物半導体薄膜形成に向けたMOVPEバッファ層の初期成長過程観察

    出浦桃子, 杉山正和, 星井拓也, 菅原聡, 高木信一, 中野義昭

    応用物理学関係連合講演会講演予稿集   54th ( 1 )   365   2007年3月

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    記述言語:日本語  

  • パルスインジェクション法で成長したAlN薄膜の極性と不純物濃度

    梁正承, ハッサネット ソンダンルー, 脇一太郎, 杉山正和, 中野義昭, 霜垣幸浩

    応用物理学関係連合講演会講演予稿集   54th ( 1 )   371   2007年3月

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    記述言語:日本語  

  • 不純物を含むMQWにおける逆バイアス時のキャリア効果と光位相変調器への応用可能性

    大江英輝, 清水大雅, 中野義昭

    応用物理学関係連合講演会講演予稿集   54th ( 3 )   1263   2007年3月

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    記述言語:日本語  

  • 強磁性体・半導体ハイブリッド構造光デバイスのためのMnSb結晶薄膜の成長と評価

    小川悠介, SCHALLENBERG Timo, 宗片比呂夫, 雨宮智宏, 清水大雅, 中野義昭

    応用物理学関係連合講演会講演予稿集   54th ( 1 )   509   2007年3月

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    記述言語:日本語  

  • 非相反損失による導波路光アイソレータの低損失化および単一モード伝搬の確認

    雨宮智宏, 清水大雅, 横山正史, HAI P. N, 田中雅明, 中野義昭

    応用物理学関係連合講演会講演予稿集   54th ( 3 )   1270   2007年3月

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    記述言語:日本語  

  • BCS-1-6 半導体双安定レーザフリップフロップを用いた光パケットスイッチング技術(BCS-1.フォトニックネットワークを支える光スイッチ技術,シンポジウム)

    竹中 充, 武田 浩司, 金間 泰樹, レイバン モーラ, 宮原 利治, 上塚 尚登, 中野 義昭

    電子情報通信学会総合大会講演論文集   2007 ( 1 )   "S - 11"-"S-12"   2007年3月

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • B-12-1 多波長光パケットと波長パスを組み合わせたハイブリッド型光ネットワーク(B-12.フォトニックネットワーク,一般講演)

    今泉 英明, 渡部 克弥, 斉藤 哲也, 松本 延孝, 種村 拓夫, アルアミン アブゥラー, 竹中 充, 中野 義昭, 森川 博之

    電子情報通信学会総合大会講演論文集   2007 ( 2 )   456 - 456   2007年3月

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • B-12-5 PLZT型光スイッチを用いた80Gb/s多波長パケット交換の検証(B-12.フォトニックネットワーク,一般講演)

    渡部 克弥, 松本 延孝, 今泉 英明, 竹中 充, 中野 義昭, 森川 博之

    電子情報通信学会総合大会講演論文集   2007 ( 2 )   460 - 460   2007年3月

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • BCS-1-6 半導体双安定レーザフリップフロップを用いた光パケットスイッチング技術(BCS-1,フォトニックネットワークを支える光スイッチ技術,シンポジウム)

    竹中 充, 武田 浩司, 金間 泰樹, レイバン モーラ, 宮原 利治, 上塚 尚登, 中野 義昭

    電子情報通信学会総合大会講演論文集   2007 ( 2 )   "S - 21"-"S-22"   2007年3月

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • Nonreciprocal propagation of light without external magnetic fields in a semiconductor waveguide isolator with a MnAs layer

    T. Amemiya, H. Shimizu, P. N. Hai, M. Tanaka, Y. Nakano

    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS   310 ( 2 )   2161 - 2163   2007年3月 (   ISSN:0304-8853 )

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    記述言語:英語   出版者・発行元:ELSEVIER SCIENCE BV  

    A 1.5-mu m, TM-mode waveguide optical isolator was developed for use in photonic integrated circuits. It consists of an InGaAlAs-based optical waveguide with a ferromagnetic MnAs layer and makes use of nonreciprocal propagation loss of light induced by the magnetized MnAs layer. With a large-remanence MnAs layer grown with the Mn-template epitaxy method, the isolator successfully showed an 8.7 dB/mm isolation ratio without external magnetic fields. (c) 2006 Elsevier B.V. All rights reserved.

    DOI: 10.1016/j.jmmm.2006.11.039

  • PLZT型光スイッチを用いた80Gb/s多波長光パケット転送実験

    渡部 克弥, 斉藤 哲也, 松本 延孝, 種村 拓夫, 今泉 英明, アルアミン アブドゥラー, 竹中 充, 中野 義昭, 森川 博之

    電子情報通信学会技術研究報告. PN, フォトニックネットワーク   106 ( 546 )   81 - 84   2007年2月 (   ISSN:0913-5685 )

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    ネットワークの広帯域化に向け,多波長光パケット転送技術が注目されている.多波長光パケット転送技術は,単一ペイロードを多波長にわたって分割・構成し,一つの光スイッチにより光領域で一括転送する方式である.この方式により,波長数の増加による装置コスト,空間的規模の問題を軽減でき,より規模性のあるシステム構築が可能となる.本論文では,多波長光パケット転送の実現性を評価する目的で,10Gb/sを8波長多重した80Gb/s多波長光パケット転送をPLZT型光パケットを用いて検証した.そしてPLZT型光スイッチを用いた多波長光パケット転送の実現性を示した.

  • PLZT型光スイッチを用いた80Gb/s多波長パケット転送実験

    渡部克弥, 斉藤哲也, 松本延孝, 種村拓夫, 今泉英明, AL AMIN Abdullah, 竹中充, 中野義昭, 森川博之

    電子情報通信学会技術研究報告   106 ( 546(PN2006 81-104) )   81 - 84   2007年2月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    ネットワークの広帯域化に向け,多波長光パケット転送技術が注目されている.多波長光パケット転送技術は,単一ペイロードを多波長にわたって分割・構成し,一つの光スイッチにより光領域で一括転送する方式である.この方式により,波長数の増加による装置コスト,空間的規模の問題を軽減でき,より規模性のあるシステム構築が可能となる.本論文では,多波長光パケット転送の実現性を評価する目的で,10Gb/sを8波長多重した80Gb/s多波長光パケット転送をPLZT型光パケットを用いて検証した.そしてPLZT型光スイッチを用いた多波長光パケット転送の実現性を示した.

  • 多波長光パケット交換と光回線交換を用いたハイブリッドネットワークに関する検討

    今泉 英明, 渡部 克弥, 斉藤 哲也, 松本 延孝, 種村 拓夫, アルアミン アブドゥラー, 竹中 充, 中野 義昭, 森川 博之

    電子情報通信学会技術研究報告. PN, フォトニックネットワーク   106 ( 546 )   65 - 68   2007年2月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    将来のインターネットでは大容量転送能力のみならず,QoS保証機能が要求される.これらの達成を目的とする既存のハイブリッド光ネットワークでは,波長ごとに独立したパケット交換用のコンポーネントが必要となり,波長数が増加した場合その規模性に問題があった.この問題を解決するために,本論文では多波長光パケット交換と光回線交換を組み合わせた新しいハイブリッド光ネットワークアーキテクチャHOTARUを提案,その特徴について論じ,必要となる機能に関して検討する.本ネットワークでは,光回線交換によりQoS保証を行ない,残りの空波長領域を用いて多波長光パケット交換を行うことで,高い帯域利用効率とQoS保証の達成を目的とする.本論文では,本ネットワークを実現する上での機能を整理し,ラベル方式,波長割当方法,コントロールプレーンについて議論し,コアノードアーキテクチャに関して論じる.

  • 多波長光パケット交換と光回線交換を用いたハイブリッドネットワークに関する検討

    今泉英明, 渡部克弥, 斉藤哲也, 松本延孝, 種村拓夫, AL AMIN Abdullah, 竹中充, 中野義昭, 森川博之

    電子情報通信学会技術研究報告   106 ( 546(PN2006 81-104) )   65 - 68   2007年2月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    将来のインターネットでは大容量転送能力のみならず,QoS保証機能が要求される.これらの達成を目的とする既存のハイブリッド光ネットワークでは,波長ごとに独立したパケット交換用のコンポーネントが必要となり,波長数が増加した場合その規模性に問題があった.この問題を解決するために,本論文では多波長光パケット交換と光回線交換を組み合わせた新しいハイブリッド光ネットワークアーキテクチャHOTARUを提案,その特徴について論じ,必要となる機能に関して検討する.本ネットワークでは,光回線交換によりQoS保証を行ない,残りの空波長領域を用いて多波長光パケット交換を行うことで,高い帯域利用効率とQoS保証の達成を目的とする.本論文では,本ネットワークを実現する上での機能を整理し,ラベル方式,波長割当方法,コントロールプレーンについて議論し,コアノードアーキテクチャに関して論じる.

  • GaAs‐MOVPEにおける表面吸着層のin situ観察および解析

    出浦桃子, 出浦桃子, 杉山正和, 中野貴之, 中野義昭, 霜垣幸浩

    化学工学会年会研究発表講演要旨集   72nd   625 - 666   2007年2月

     詳細

    記述言語:日本語   出版者・発行元:公益社団法人 化学工学会  

    DOI: 10.11491/scej.2007.0.666.0

  • InGaAsP/InP系有機金属気相成長における表面マイグレーション長の成長条件依存性

    塩田倫也, 鬼塚隆祐, 王雲鵬, 杉山正和, 霜垣幸浩, 中野義昭

    化学工学会年会研究発表講演要旨集   72nd   627 - 668   2007年2月

     詳細

    記述言語:日本語   出版者・発行元:公益社団法人 化学工学会  

    DOI: 10.11491/scej.2007.0.668.0

  • InGaAsP系選択MOVPEにおけるリアクタースケール分布

    鬼塚隆祐, 塩田倫也, 宋海政, 杉山正和, 霜垣幸浩, 中野義昭

    化学工学会年会研究発表講演要旨集   72nd   628 - 669   2007年2月

     詳細

    記述言語:日本語   出版者・発行元:公益社団法人 化学工学会  

    DOI: 10.11491/scej.2007.0.669.0

  • MMI型光ラベル・メモリによる320Gb/s光パケット・スイッチング

    竹中 充, 武田 浩司, 金間 泰樹, レイバン モーラ, 宮原 利治, 上塚 尚登, 中野 義昭

    電気学会研究会資料. : The Papers of Technical Meeting on Electromagnetic Theory, IEE Japan. EMT, 電磁界理論研究会   2007 ( 1 )   37 - 40   2007年1月

     詳細

    記述言語:日本語  

  • MMI型光ラベル・メモリによる320Gb/s光パケット・スイッチング

    竹中充, 武田浩司, 金間泰樹, RABURN Maura, 宮原利治, 上塚尚登, 中野義昭

    電気学会電磁界理論研究会資料   EMT-07 ( 1-16.18-35 )   37 - 40   2007年1月

     詳細

    記述言語:日本語  

  • 光バーストルータープロトタイプにおける40/10Gbpsビットレート無依存スイッチングおよび波長変換による衝突回避の実証

    アルアミン アブドゥッラー, 清水 克宏, 竹中 充, 種村 拓夫, 西村 公佐, 猪原 涼, 堀内 幸夫, 宇佐見 正士, 瀧田 裕, 甲斐 雄高, 青木 泰彦, 尾中 寛, 宮崎 泰典, 宮原 利治, 八田 竜夫, 本島 邦明, 鍵本 太志, 黒部 立郎, 粕川 秋彦, 有本 英生, 辻 伸二, 上塚 尚登, 中野 義昭

    電気学会研究会資料. : The Papers of Technical Meeting on Electromagnetic Theory, IEE Japan. EMT, 電磁界理論研究会   2007 ( 1 )   155 - 160   2007年1月

     詳細

    記述言語:日本語  

  • 光バーストルータープロトタイプにおける40/10Gbpsビットレート無依存スイッチングおよび波長変換による衝突回避の実証

    AL AMIN Abdullah, 清水克宏, 竹中充, 種村拓夫, 西村公佐, 猪原涼, 堀内幸夫, 宇佐見正士, 瀧田裕, 甲斐雄高, 青木泰彦, 尾中寛, 宮崎泰典, 宮原利治, 八田竜夫, 本島邦明, 鍵本太志, 黒部立郎, 粕川秋彦, 有本英生, 辻伸二, 上塚尚登, 中野義昭

    電気学会電磁界理論研究会資料   EMT-07 ( 1-16.18-35 )   155 - 160   2007年1月

     詳細

    記述言語:日本語  

  • MMI型光ラベル・メモリによる320Gb/s光パケット・スイッチング(フォトニックNW・デバイス,フォトニック結晶・ファイバとその応用,光集積回路,光導波路素子,光スイッチング,導波路解析,一般)

    竹中 充, 武田 浩司, 金間 泰樹, レイバン モーラ, 宮原 利治, 上塚 尚登, 中野 義昭

    電子情報通信学会技術研究報告. PN, フォトニックネットワーク   106 ( 513 )   37 - 40   2007年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    従来の光パケットノードは、入力された光ラベルを最終的に電気信号へ変換し、ドライバ回路を通して光スイッチを駆動する構成となっている。このため光切り替え時間はドライバ回路によって制限され1ns以下の高速化は困難となっている。筆者らは、より高速な光切り替え時間を実現するために、光フリップ・フロップを用いた全光処理ノードの提案を行ってきた。光フリップ・フロップで光ラベル処理、光スイッチ駆動を行うことで、1ns以下の超高速スイッチングを実現することができる。本論文では、我々が開発したMMI-BLD光フリップ・フロップを用いることで、320Gb/s多波長パケットを300psでスイッチングした結果を報告する。

  • MMI型光ラベル・メモリによる320Gb/s光パケット・スイッチング

    竹中 充, 武田 浩司, 金間 泰樹, レイバン モーラ, 宮原 利治, 上塚 尚登, 中野 義昭

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   106 ( 515 )   37 - 40   2007年1月

     詳細

    記述言語:日本語  

  • MMI型光ラベル・メモリによる320Gb/s光パケット・スイッチング(フォトニックNW・デバイス,フォトニック結晶・ファイバとその応用,光集積回路,光導波路素子,光スイッチング,導波路解析,一般)

    竹中 充, 武田 浩司, 金間 泰樹, レイバン モーラ, 宮原 利治, 上塚 尚登, 中野 義昭

    電子情報通信学会技術研究報告. OPE, 光エレクトロニクス   106 ( 514 )   37 - 40   2007年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    従来の光パケットノードは、入力された光ラベルを最終的に電気信号へ変換し、ドライバ回路を通して光スイッチを駆動する構成となっている。このため光切り替え時間はドライバ回路によって制限され1ns以下の高速化は困難となっている。筆者らは、より高速な光切り替え時間を実現するために、光フリップ・フロップを用いた全光処理ノードの提案を行ってきた。光フリップ・フロップで光ラベル処理、光スイッチ駆動を行うことで、1ns以下の超高速スイッチングを実現することができる。本論文では、我々が開発したMMI-BLD光フリップ・フロップを用いることで、320Gb/s多波長パケットを300psでスイッチングした結果を報告する。

  • MMI型光ラベル・メモリによる320Gb/s光パケット・スイッチング(フォトニックNW・デバイス,フォトニック結晶・ファイバとその応用,光集積回路,光導波路素子,光スイッチング,導波路解析,一般)

    竹中 充, 武田 浩司, 金間 泰樹, レイバン モーラ, 宮原 利治, 上塚 尚登, 中野 義昭

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   106 ( 515 )   37 - 40   2007年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    従来の光パケットノードは、入力された光ラベルを最終的に電気信号へ変換し、ドライバ回路を通して光スイッチを駆動する構成となっている。このため光切り替え時間はドライバ回路によって制限され1ns以下の高速化は困難となっている。筆者らは、より高速な光切り替え時間を実現するために、光フリップ・フロップを用いた全光処理ノードの提案を行ってきた。光フリップ・フロップで光ラベル処理、光スイッチ駆動を行うことで、1ns以下の超高速スイッチングを実現することができる。本論文では、我々が開発したMMI-BLD光フリップ・フロップを用いることで、320Gb/s多波長パケットを300psでスイッチングした結果を報告する。

  • 光バーストルータープロトタイプにおける40/10Gbpsビットレート無依存スイッチングおよび波長変換による衝突回避の実証(フォトニックNW・デバイス,フォトニック結晶・ファイバとその応用,光集積回路,光導波路素子,光スイッチング,導波路解析,一般)

    アルアミン アブドゥッラー, 清水 克宏, 竹中 充, 種村 拓夫, 西村 公佐, 猪原 涼, 堀内 幸夫, 宇佐見 正士, 瀧田 裕, 甲斐 雄高, 青木 泰彦, 尾中 寛, 宮崎 泰典, 宮原 利治, 八田 竜夫, 本島 邦明, 鍵本 太志, 黒部 立郎, 粕川 秋彦, 有本 英生, 辻 伸二, 上塚 尚登, 中野 義昭

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   106 ( 515 )   155 - 160   2007年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    5x5高速PLZT光マトリックススイッチを用いた光バーストスイッチングルーターのプロトタイプのビットレート無依存動作を報告する。2波長の2x2光バーストノードにおいて光ラベルによる動的なスイッチングおよび、MZI-SOA波長変換器により10Gbps、40Gbps両方のペイロードに対するバースト衝突回避を初めて実証した。両ビットレートに対して同一動作条件の元でエラーフリー特性が得られ、トランスペアレントな光バーストスイッチングの可能性を示した。

  • 光バーストルータープロトタイプにおける40/10Gbpsビットレート無依存スイッチングおよび波長変換による衝突回避の実証

    アルアミン アブドゥッラー, 清水 克宏, 竹中 充, 種村 拓夫, 西村 公佐, 猪原 涼, 堀内 幸夫, 宇佐見 正士, 瀧田 裕, 甲斐 雄高, 青木 泰彦, 尾中 寛, 宮崎 泰典, 宮原 利治, 八田 竜夫, 本島 邦明, 鍵本 太志, 黒部 立郎, 粕川 秋彦, 有本 英生, 辻 伸二, 上塚 尚登, 中野 義昭

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   106 ( 515 )   155 - 160   2007年1月

     詳細

    記述言語:日本語  

  • 光バーストルータープロトタイプにおける40/10Gbpsビットレート無依存スイッチングおよび波長変換による衝突回避の実証(フォトニックNW・デバイス,フォトニック結晶・ファイバとその応用,光集積回路,光導波路素子,光スイッチング,導波路解析,一般)

    アルアミン アブドゥッラー, 清水 克宏, 竹中 充, 種村 拓夫, 西村 公佐, 猪原 涼, 堀内 幸夫, 宇佐見 正士, 瀧田 裕, 甲斐 雄高, 青木 泰彦, 尾中 寛, 宮崎 泰典, 宮原 利治, 八田 竜夫, 本島 邦明, 鍵本 太志, 黒部 立郎, 粕川 秋彦, 有本 英生, 辻 伸二, 上塚 尚登, 中野 義昭

    電子情報通信学会技術研究報告. OPE, 光エレクトロニクス   106 ( 514 )   155 - 160   2007年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    5x5高速PLZT光マトリックススイッチを用いた光バーストスイッチングルーターのプロトタイプのビットレート無依存動作を報告する。2波長の2x2光バーストノードにおいて光ラベルによる動的なスイッチングおよび、MZI-SOA波長変換器により10Gbps、40Gbps両方のペイロードに対するバースト衝突回避を初めて実証した。両ビットレートに対して同一動作条件の元でエラーフリー特性が得られ、トランスペアレントな光バーストスイッチングの可能性を示した。

  • 光バーストルータープロトタイプにおける40/10Gbpsビットレート無依存スイッチングおよび波長変換による衝突回避の実証(フォトニックNW・デバイス,フォトニック結晶・ファイバとその応用,光集積回路,光導波路素子,光スイッチング,導波路解析,一般)

    アルアミン アブドゥッラー, 清水 克宏, 竹中 充, 種村 拓夫, 西村 公佐, 猪原 涼, 堀内 幸夫, 宇佐見 正士, 瀧田 裕, 甲斐 雄高, 青木 泰彦, 尾中 寛, 宮崎 泰典, 宮原 利治, 八田 竜夫, 本島 邦明, 鍵本 太志, 黒部 立郎, 粕川 秋彦, 有本 英生, 辻 伸二, 上塚 尚登, 中野 義昭

    電子情報通信学会技術研究報告. PN, フォトニックネットワーク   106 ( 513 )   155 - 160   2007年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    5x5高速PLZT光マトリックススイッチを用いた光バーストスイッチングルーターのプロトタイプのビットレート無依存動作を報告する。2波長の2x2光バーストノードにおいて光ラベルによる動的なスイッチングおよび、MZI-SOA波長変換器により10Gbps、40Gbps両方のペイロードに対するバースト衝突回避を初めて実証した。両ビットレートに対して同一動作条件の元でエラーフリー特性が得られ、トランスペアレントな光バーストスイッチングの可能性を示した。

  • 波長変換を用いた光バーストスイッチングノードとその多段接続性について((フォトニック)IPネットワーク技術,(光)ノード技術,WDM技術,一般)

    清水 克宏, アルアミン アブドゥッラー, 竹中 充, 種村 拓夫, 猪原 涼, 西村 公佐, 堀内 幸夫, 宇佐見 正士, 瀧田 裕, 甲斐 雄高, 青木 泰彦, 尾中 寛, 宮原 利治, 八田 竜夫, 本島 邦明, 小野 元司, 近藤 裕己, 陰山 淳一, 杉本 直樹, 小倉 一郎, 中野 義昭

    電子情報通信学会技術研究報告. OCS, 光通信システム   106 ( 493 )   1 - 6   2007年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    ネットワークリソースの効率利用を目的とした共有型波長変換を用いた光バーストスイッチングノードを開発した。10Gbpsおよび40Gbpsのペイロード信号の共存が可能であること、10Gbps信号を10ノード以上多段接続できることを確認した。

  • 波長変換を用いた光バーストスイッチングノードとその多段接続性について

    清水克宏, AL AMIN Abdullah, 竹中充, 種村拓夫, 猪原涼, 西村公佐, 堀内幸夫, 宇佐見正士, 瀧田裕, 甲斐雄高, 青木泰彦, 尾中寛, 宮原利治, 八田竜夫, 本島邦明, 小野元司, 近藤裕己, 陰山淳一, 杉本直樹, 小倉一郎, 中野義昭

    電子情報通信学会技術研究報告   106 ( 493(OCS2006 74-89) )   1 - 6   2007年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    ネットワークリソースの効率利用を目的とした共有型波長変換を用いた光バーストスイッチングノードを開発した。10Gbpsおよび40Gbpsのペイロード信号の共存が可能であること、10Gbps信号を10ノード以上多段接続できることを確認した。

  • GaAsおよびInPのMOVPEにおける表面吸着層の速度過程比較

    出浦 桃子, 杉山 正和, 霜垣 幸浩, 中野 義昭

    化学工学会 研究発表講演要旨集   2007 ( 0 )   1145 - 1145   2007年

     詳細

    記述言語:日本語   出版者・発行元:The Society of Chemical Engineers, Japan  

  • GaAs-MOVPEにおける表面吸着層のin situ観察および解析

    出浦 桃子, 杉山 正和, 中野 貴之, 中野 義昭, 霜垣 幸浩

    化学工学会 研究発表講演要旨集   2007 ( 0 )   666 - 666   2007年

     詳細

    記述言語:日本語   出版者・発行元:The Society of Chemical Engineers, Japan  

    DOI: 10.11491/scej.2007.0.666.0

  • High temperature operation of TM-mode nonreciprocal-loss waveguide optical isolator with ferromagnetic MnSb

    T. Amemiya, Y. Ogawa, H. Shimizu, H. Munekata, Y. Nakano

    2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2   727 - +   2007年 (   ISSN:1092-8081 )

     詳細

    記述言語:英語   出版者・発行元:IEEE  

    A TM-mode waveguide optical isolator consisting of a semiconductor waveguide combined with a ferromagnetic MnSb layer was developed. An isolation ratio of 12 dB/mm was achieved at a wavelength of 1.54 mu m and a temperature range of 20-70 degrees C.

    DOI: 10.1109/LEOS.2007.4382613

  • Impact of Atomistic Surface Structure on Macroscopic Surface Reaction Rate in MOVPE of GaAs

    M. Sugiyama, H. Z. Song, M. Deura, Y. Nakano, Y. Shimogaki

    Electrochemical Solid-State Letters   10 ( 4 )   H123-H126   2007年

     詳細

  • InGaAsP系選択MOVPEにおけるリアクタースケール分布

    鬼塚 隆祐, 塩田 倫也, 宋 海政, 杉山 正和, 霜垣 幸浩, 中野 義昭

    化学工学会 研究発表講演要旨集   2007 ( 0 )   669 - 669   2007年

     詳細

    記述言語:日本語   出版者・発行元:The Society of Chemical Engineers, Japan  

    DOI: 10.11491/scej.2007.0.669.0

  • MMI型双安定レーザーの研究開発および全光パケットスイッチングへの応用

    竹中 充, 武田 浩司, 金間 泰樹, レイバン モーラ, 宮原 利治, 上塚 尚登, 中野 義昭

    レーザー研究   35 ( 0 )   188 - 189   2007年 (   ISSN:0387-0200 )

     詳細

    記述言語:日本語   出版者・発行元:The Laser Society of Japan  

  • MOVPEにおける表面反応速度と表面原子構造の関係

    杉山 正和, 出浦 桃子, 宋 海政, 王 云鵬, 中野 義昭, 霜垣 幸浩

    化学工学会 研究発表講演要旨集   2007 ( 0 )   1148 - 1148   2007年

     詳細

    記述言語:日本語   出版者・発行元:The Society of Chemical Engineers, Japan  

  • InGaAsP/InP系有機金属気相成長における表面マイグレーション長の成長条件依存性

    塩田 倫也, 鬼塚 隆祐, 王 雲鵬, 杉山 正和, 霜垣 幸浩, 中野 義昭

    化学工学会 研究発表講演要旨集   2007 ( 0 )   668 - 668   2007年

     詳細

    記述言語:日本語   出版者・発行元:The Society of Chemical Engineers, Japan  

    DOI: 10.11491/scej.2007.0.668.0

  • InGaAsP系MOVPEにおけるV族吸脱着速度と固相組成

    鬼塚 隆祐, 杉山 正和, 霜垣 幸浩, 中野 義昭

    化学工学会 研究発表講演要旨集   2007 ( 0 )   1144 - 1144   2007年

     詳細

    記述言語:日本語   出版者・発行元:The Society of Chemical Engineers, Japan  

  • Kinetic Analysis of Surface Adsorption Layer in GaAs(001) Metalorganic Vapor Phase Epitaxy by In situ Reflectance Anisotropy Spectroscopy

    M. Deura, M. Sugiyama, T. Nakano, Y. Nakano, Y. Shimogaki

    Japanese Journal of Applied Physics   46 ( 10A )   6519 - 6524   2007年

     詳細

  • パルスインジェクション方式による高品質 GaNの低温MOVPE成長

    梁 正承, Sodabanulu Hassanet, 杉山 正和, 中野 義昭, 霜垣 幸浩

    化学工学会 研究発表講演要旨集   2007 ( 0 )   1152 - 1152   2007年

     詳細

    記述言語:日本語   出版者・発行元:The Society of Chemical Engineers, Japan  

  • パルスインジェクションを用いたInPの選択MOVPE成長における端面異常成長の抑制

    谷 和樹, 出浦 桃子, 杉山 正和, 中野 義昭, 霜垣 幸浩

    化学工学会 研究発表講演要旨集   2007 ( 0 )   1153 - 1153   2007年

     詳細

    記述言語:日本語   出版者・発行元:The Society of Chemical Engineers, Japan  

  • 半導体デジタル光デバイス/光集積回路の開発―デジタルフォトニクスに向けて―

    中野義昭

    新「物質・機能」の開拓と未来への展望 JST-SORST(物理・情報系)フォーラム 平成19年   21 - 25   2007年

     詳細

    記述言語:日本語  

  • 選択成長プロファイル解析によるInP,InAs-MOVPE成長の速度論

    王 雲鵬, 宋 海政, 杉山 正和, 中野 義昭, 霜垣 幸浩

    化学工学会 研究発表講演要旨集   2007 ( 0 )   1147 - 1147   2007年

     詳細

    記述言語:日本語   出版者・発行元:The Society of Chemical Engineers, Japan  

  • 選択成長を利用したGaAs-MOVPEプロセスの表面反応機構解析

    宋 海政, 杉山 正和, 中野 義昭, 霜垣 幸浩

    化学工学会 研究発表講演要旨集   2007 ( 0 )   667 - 667   2007年

     詳細

    記述言語:日本語   出版者・発行元:The Society of Chemical Engineers, Japan  

    DOI: 10.11491/scej.2007.0.667.0

  • Zコントラスト法による化合物半導体ヘテロ界面急峻性評価

    中野 貴之, 杉山 正和, 阿部 英司, 霜垣 幸浩, 中野 義昭

    まてりあ : 日本金属学会会報   45 ( 12 )   853 - 853   2006年12月 (   ISSN:1340-2625 )

     詳細

    記述言語:日本語   出版者・発行元:公益社団法人 日本金属学会  

    DOI: 10.2320/materia.45.853

  • 強磁性MnAsによる非相反損失にもとづくTMモード導波路型光アイソレータ(光パッシブコンポーネント(フィルタ,コネクタ、MEMS)・光ファイバ、一般)

    雨宮 智宏, 清水 大雅, 横山 正史, YOKOYAMA Masafumi, 田中 雅明, 中野 義昭

    電子情報通信学会技術研究報告. OPE, 光エレクトロニクス   106 ( 435 )   19 - 22   2006年12月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    我々はこれまで、非相反損失に基づくTMモード半導体能動導波路光アイソレータの実証を行ってきた。TMモード半導体導波路光アイソレータにおいて、非相反効果をもたらす磁気光学材料として、エピタキシャル強磁性金属MnAsを用いてきた。今回我々はリッジ導波路型の素子の作製に成功し、波長1530-1550nmの光に対し7.2dB/mmの消光比を実現した。横モードの制御、伝搬損失の大きさが従来の利得導波型の素子において問題となっていたが、リッジ導波路型の素子の実現により、横単一モード伝搬の確認と伝搬損失の20dBの改善に成功した。

  • 強磁性MnAsによる非相反損失にもとづくTMモード導波路型光アイソレータ

    雨宮智宏, 清水大雅, 横山正史, HAI P. N, 田中雅明, 中野義昭

    電子情報通信学会技術研究報告   106 ( 435(OPE2006 123-128) )   19 - 22   2006年12月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語  

  • MOVPE選択成長における1.55μm波長帯集積型4チャネルCWDM DFBレーザアレイ(半導体レーザ関連技術,及び一般)

    ダルジャ ジェッシー, チャン メルヴィン, 杉山 正和, 中野 義昭

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   106 ( 404 )   55 - 59   2006年12月 (   ISSN:0913-5685 )

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    機金属気相成長(MOVPE)による選択成長(SAG)を用い1.55μm低密度波長多重(CWDM)システム向けの4チャネル集積型DFBレーザアレイを作製しました.20nmというチャネル間隔を得るのにワイドストライプSAGとEB描画を用いた。波長の異なるレーザから単一モード光ファイバーへ結合するためにMMIカプラーが使われる。レーザアレイと光カプラーを集積化することにより、デバイスのパッケージングが単純化できるというメリットがあると考えられる。

  • DBR型MMI‐BLDの動的全光フリップ・フロップ動作

    武田浩司, 竹中充, RABURN Maura, 金間泰樹, SONG Xueliang, BARTON Jonathon S, 中野義昭

    応用物理学会学術講演会講演予稿集   67th ( 3 )   1090   2006年8月

     詳細

    記述言語:日本語  

  • InGaAsP/InP系MOVPE選択成長の反応モデリング:表面拡散長の組成比依存性

    塩田倫也, 鬼塚隆祐, 杉山正和, 霜垣幸浩, 中野義昭

    応用物理学会学術講演会講演予稿集   67th ( 1 )   286   2006年8月

     詳細

    記述言語:日本語  

  • InGaAs/InAlAs結合量子井戸を用いた電気光学位相変調器の作製と評価

    大江英輝, 清水大雅, 中野義昭

    応用物理学会学術講演会講演予稿集   67th ( 3 )   1094   2006年8月

     詳細

    記述言語:日本語  

  • In situ RASを用いたGaAs‐MOVPEにおけるサブサーフェスの観察

    出浦桃子, 杉山正和, 中野貴之, 霜垣幸浩, 中野義昭

    応用物理学会学術講演会講演予稿集   67th ( 1 )   286   2006年8月

     詳細

    記述言語:日本語  

  • InGaAsP系選択成長MOVPEにおける反応炉内位置によるマスク効果の変化

    鬼塚隆祐, 塩田倫也, 杉山正和, 霜垣幸浩, 中野義昭

    応用物理学会学術講演会講演予稿集   67th ( 1 )   287   2006年8月

     詳細

    記述言語:日本語  

  • MOVPEによるGaAs/InGaPヘテロ界面形成の精緻化とZ‐STEM法を用いた急峻性評価

    中野貴之, 阿部英司, 杉山正和, 中野義昭, 霜垣幸浩

    応用物理学会学術講演会講演予稿集   67th ( 1 )   296   2006年8月

     詳細

    記述言語:日本語  

  • ISBTスイッチング実現に向けたICPエッチングによるAINベース導波路作製と吸収測定

    清水俊匡, KUMTOMKITTIKUL C, KUMTOMKITTIKUL C, 飯塚紀夫, 鈴木信夫, 杉山正和, 霜垣幸浩, 中野義昭

    応用物理学会学術講演会講演予稿集   67th ( 3 )   1077   2006年8月

     詳細

    記述言語:日本語  

  • 強磁性MnAsによる非相反損失を用いた導波路型光アイソレータのゼロ磁場動作

    雨宮智宏, 清水大雅, HAI P. N, 田中雅明, 中野義昭

    応用物理学会学術講演会講演予稿集   67th ( 3 )   1095   2006年8月

     詳細

    記述言語:日本語  

  • InGaAs/InAlAs二重結合量子井戸を用いた小型・低電圧電気光学位相変調器(量子効果デバイス(光信号処理,LD,光増幅,変調等)と集積化技術,一般)

    大江 英輝, 雨宮 智宏, 清水 大雅, 中野 義昭

    電子情報通信学会技術研究報告. OPE, 光エレクトロニクス   106 ( 133 )   35 - 38   2006年6月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    小型・低駆動電圧の光位相変調器を実現するため、活性層にInGaAs/InAlAs二重結合量子井戸を用いた光位相変調器をMOCVDにより試作した。長さ850μmの素子に対してファブリー・ペロー法による静特性の測定を行った結果、バイアスを+0.5Vから-0.5Vに変化させた際、波長1580nmのTEモード光に対し、強度変調を伴わない75°/V/mmの位相変調効果が観測された。

  • InGaAs/InAlAs二重結合量子井戸を用いた小型・低電圧電気光学位相変調器

    大江英輝, 雨宮智宏, 清水大雅, 中野義昭

    電子情報通信学会技術研究報告   106 ( 134(LQE2006 19-31) )   35 - 38   2006年6月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    小型・低駆動電圧の光位相変調器を実現するため、活性層にInGaAs/InAlAs二重結合量子井戸を用いた光位相変調器をMOCVDにより試作した。長さ850μmの素子に対してファブリー・ペロー法による静特性の測定を行った結果、バイアスを+0.5Vから-0.5Vに変化させた際、波長1580nmのTEモード光に対し、強度変調を伴わない75°/V/mmの位相変調効果が観測された。

  • InGaAs/InAlAs二重結合量子井戸を用いた小型・低電圧電気光学位相変調器(量子効果デバイス(光信号処理,LD,光増幅,変調等)と集積化技術,一般)

    大江 英輝, 雨宮 智宏, 清水 大雅, 中野 義昭

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   106 ( 134 )   35 - 38   2006年6月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    小型・低駆動電圧の光位相変調器を実現するため、活性層にInGaAs/InAlAs二重結合量子井戸を用いた光位相変調器をMOCVDにより試作した。長さ850μmの素子に対してファブリー・ペロー法による静特性の測定を行った結果、バイアスを+0.5Vから-0.5Vに変化させた際、波長1580nmのTEモード光に対し、強度変調を伴わない75°/V/mmの位相変調効果が観刺された。

  • 高密度光IC用ファイバアレイOPLEAF

    薗部忠, 広井典良, 竹中充, 中野義昭, 藤田博之

    電気学会論文誌 E   126 ( 6 )   255 - 260   2006年6月 (   ISSN:1341-8939 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人 電気学会  

    We propose an OPtical LEAd Frame (OPLEAF) that serves as the interface between an optical fiber array and high density optical IC. OPLEAF allows significant size reduction of optical IC. Recent advances in the miniaturization of optical ICs have made it possible to realize adjacent optical device spacing of 10&mu;m-order. The OPLEAF converts the pitch from 250&mu;m to 30&mu;m and provides a miniaturized interface between fibers and the optical IC. OPLEAF is unification with tape fiber (fiber array) and connected to the optical IC directly; thus alignment is necessary only at one end. The maximum loss due to the curvature was evaluated to be 1.5dB from optical experiment. The value agrees well with the 1.3dB obtained from Beam Propagation Method (BPM) simulation.

    DOI: 10.1541/ieejsmas.126.255

  • 高密度光IC用ファイバアレイOPLEAF

    薗部 忠, 広井 典良, 竹中 充, 中野 義昭, 藤田 博之

    電気学会論文誌. E, センサ・マイクロマシン準部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A publication of Sensors and Micromachines Society   126 ( 6 )   255 - 260   2006年6月 (   ISSN:1341-8939 )

     詳細

    記述言語:日本語   出版者・発行元:The Institute of Electrical Engineers of Japan  

    We propose an OPtical LEAd Frame (OPLEAF) that serves as the interface between an optical fiber array and high density optical IC. OPLEAF allows significant size reduction of optical IC. Recent advances in the miniaturization of optical ICs have made it possible to realize adjacent optical device spacing of 10μm-order. The OPLEAF converts the pitch from 250μm to 30μm and provides a miniaturized interface between fibers and the optical IC. OPLEAF is unification with tape fiber (fiber array) and connected to the optical IC directly; thus alignment is necessary only at one end. The maximum loss due to the curvature was evaluated to be 1.5dB from optical experiment. The value agrees well with the 1.3dB obtained from Beam Propagation Method (BPM) simulation.

    DOI: 10.1541/ieejsmas.126.255

  • 光バースト信号の一定利得増幅とその波長変換への影響の実験的評価(MPλ(Lambda)S,フォトニックネットワーク/制御,光波長変換,スイッチング,PON,一般)

    アルアミン アブドゥツラー, 清水 克宏, 田中 俊輔, 竹中 充, 宮原 利治, 八田 竜夫, 本島 邦明, 小野 元司, 近藤 裕己, 杉本 直樹, 小倉 一郎, 中野 義昭

    電子情報通信学会技術研究報告. PN, フォトニックネットワーク   106 ( 70 )   1 - 5   2006年5月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    光バーストネットワークへの適用を目指してビスマス系エルビウムドープ導波路型増幅器の高速利得制御方式を検討した。励起強度のフィードバック制御により光バーストに対する増幅器過渡応答は0.5dB以下に抑制された。また過渡応答と波長変換特性の関係を実験的に検証し、本方式が光バーストスイッチングネットワークにおいてペナルティフリーの波長変換を実現するために有用であることを確認した。

  • 光バースト信号の一定利得増幅とその波長変換への影響の実験的評価

    AL AMIN Abdullah, 清水克宏, 田中俊輔, 竹中充, 宮原利治, 八田竜夫, 本島邦明, 小野元司, 近藤裕己, 杉本直樹, 小倉一郎, 中野義昭

    電子情報通信学会技術研究報告   106 ( 70(PN2006 1-9) )   1 - 5   2006年5月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    光バーストネットワークへの適用を目指してビスマス系エルビウムドープ導波路型増幅器の高速利得制御方式を検討した。励起強度のフィードバック制御により光バーストに対する増幅器過渡応答は0.5dB以下に抑制された。また過渡応答と波長変換特性の関係を実験的に検証し、本方式が光バーストスイッチングネットワークにおいてペナルティフリーの波長変換を実現するために有用であることを確認した。

  • 自己整合法による微小球レンズ装荷裏面入射型高速受光素子アレイ(光部品の実装・信頼性,一般)

    西出 和広, 池田 健志, 宋 学良, 王 書栄, 中野 義昭

    電子情報通信学会技術研究報告. CPM, 電子部品・材料   106 ( 18 )   13 - 16   2006年4月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    本論文は,アレイ化した受光素子を高速化のために受光面を小さく且つ裏面入射型にし,各受光面に対応した微小球レンズを装着して,感度の向上と単一モードファイバとの位置合わせ精度の許容幅(トレランス)拡大を狙ったものである.受光部は,直径40μmのInGaAs系のp-n接合で,250μmのピッチで4個アレイ化してある.厚さ160μmのチップで受光部に対向する位置に直径50μmの凹部を形成し,そこに透明性樹脂を用いて直径180μmの球形ガラスレンズを自己整合で位置合わせし,固定している.単一モードファイバを介し,波長1.31μmと1.55μmレーザ光を照射した測定の結果,球レンズによって光の結合効率は3.43倍向上し,光軸に平行(9.23倍)・垂直方向(2.17倍)のトレランスも大幅に改善している.

  • 自己整合法による微小球レンズ装荷裏面入射型高速受光素子アレイ

    西出和広, 池田健志, SONG Xueliang, WANG Shurong, 中野義昭

    電子情報通信学会技術研究報告   106 ( 17(R2006 1-6) )   13 - 16   2006年4月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    本論文は,アレイ化した受光素子を高速化のために受光面を小さく且つ裏面入射型にし,各受光面に対応した微小球レンズを装着して,感度の向上と単一モードファイバとの位置合わせ精度の許容幅(トレランス)拡大を狙ったものである.受光部は,直径40μmのInGaAs系のp-n接合で,250μmのピッチで4個アレイ化してある.厚さ160μmのチップで受光部に対向する位置に直径50μmの凹部を形成し,そこに透明性樹脂を用いて直径180μmの球形ガラスレンズを自己整合で位置合わせし,固定している.単一モードファイバを介し,波長1.31μmと1.55μmレーザ光を照射した測定の結果,球レンズによって光の結合効率は3.43倍向上し,光軸に平行(9.23倍)・垂直方向(2.17倍)のトレランスも大幅に改善している.

  • 自己整合法による微小球レンズ装荷裏面入射型高速受光素子アレイ(光部品の実装・信頼性,一般)

    西出 和広, 池田 健志, 宋 学良, 王 書栄, 中野 義昭

    電子情報通信学会技術研究報告. OPE, 光エレクトロニクス   106 ( 19 )   13 - 16   2006年4月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    本論文は,アレイ化した受光素子を高速化のために受光面を小さく且つ裏面入射型にし,各受光面に対応した微小球レンズを装着して,感度の向上と単一モードファイバとの位置合わせ精度の許容幅(トレランス)拡大を狙ったものである.受光部は,直径40μmのInGaAs系のp-n接合で,250μmのピッチで4個アレイ化してある.厚さ160μmのチップで受光部に対向する位置に直径50μmの凹部を形成し,そこに透明性樹脂を用いて直径180μmの球形ガラスレンズを自己整合で位置合わせし,固定している.単一モードファイバを介し,波長1.31μmと1.55μmレーザ光を照射した測定の結果,球レンズによって光の結合効率は3.43倍向上し,光軸に平行(9.23倍)・垂直方向(2.17倍)のトレランスも大幅に改善している.

  • 自己整合法による微小球レンズ装荷裏面入射型高速受光素子アレイ(光部品の実装・信頼性,一般)

    西出 和広, 池田 健志, 宋 学良, 王 書栄, 中野 義昭

    電子情報通信学会技術研究報告. R, 信頼性   106 ( 17 )   13 - 16   2006年4月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    本論文は,アレイ化した受光素子を高速化のために受光面を小さく且つ裏面入射型にし,各受光面に対応した微小球レンズを装着して,感度の向上と単一モードファイバとの位置合わせ精度の許容幅(トレランス)拡大を狙ったものである.受光部は,直径40μmのInGaAs系のp-n接合で,250μmのピッチで4個アレイ化してある.厚さ160μmのチップで受光部に対向する位置に直径50μmの凹部を形成し,そこに透明性樹脂を用いて直径180μmの球形ガラスレンズを自己整合で位置合わせし,固定している.単一モードファイバを介し,波長1.31μmと1.55μmレーザ光を照射した測定の結果,球レンズによって光の結合効率は3.43倍向上し,光軸に平行(9.23倍)・垂直方向(2.17倍)のトレランスも大幅に改善している.

  • DBRを用いたMMI全光フリップ・フロップの単一モード発振及びCバンド全域動作

    武田浩司, RABURN Maura, 竹中充, BARTON Jonathon S, SONG Xueliang, 中野義昭

    応用物理学関係連合講演会講演予稿集   53rd ( 3 )   1246   2006年3月

     詳細

    記述言語:日本語  

  • InGaAsP/InP系MOVPE選択成長における歪と偏波の制御

    塩田倫也, YIT Foo Cheong, SONG Xueliang, 杉山正和, 霜垣幸浩, 中野義昭

    応用物理学関係連合講演会講演予稿集   53rd ( 1 )   335   2006年3月

     詳細

    記述言語:日本語  

  • エピタキシャル強磁性電極MnAsを用いた非相反損失変化による導波路型光アイソレータ

    雨宮智宏, 清水大雅, HAI P. N, 横山正史, 田中雅明, 中野義昭

    応用物理学関係連合講演会講演予稿集   53rd ( 3 )   1265   2006年3月

     詳細

    記述言語:日本語  

  • 光IC用高密度ピッチ変換光ファイバアレイOPLEAFの材料変更による損失改善

    広井典良, 薗部忠, 藤田博之, 竹中充, 中野義昭

    応用物理学関係連合講演会講演予稿集   53rd ( 3 )   1275   2006年3月

     詳細

    記述言語:日本語  

  • 選択成長を利用したGaAs‐MOVPE表面反応機構の解析

    霜垣幸浩, SONG Haizheng, 杉山正和, 中野義昭

    応用物理学関係連合講演会講演予稿集   53rd ( 1 )   334   2006年3月

     詳細

    記述言語:日本語  

  • 選択MOVPEによるモノリシック集積型マッハ・ツェンダSOA全光スイッチにおける能動‐受動接合部の特性

    YIT FooCheong, SONG Xueliang, CHAN Melvin J, 杉山正和, 中野義昭

    応用物理学関係連合講演会講演予稿集   53rd ( 3 )   1243   2006年3月

     詳細

    記述言語:日本語  

  • 非相反損失に基づく導波路光アイソレータモノリシック集積DFBレーザの実証

    清水大雅, 中野義昭

    応用物理学関係連合講演会講演予稿集   53rd ( 3 )   1253   2006年3月

     詳細

    記述言語:日本語  

  • 2005年量子エレクトロニクス国際会議およびレーザー・電気光学に関する環太平洋会議(IQEC CLEO-PR 2005)報告

    中野 義昭, 石川 正行

    應用物理   75 ( 3 )   352 - 352   2006年3月 (   ISSN:0369-8009 )

     詳細

    記述言語:日本語  

  • OPLEAFによる光ICとテープファイバの高密度実装

    広井典良, 薗部忠, 藤田博之, 竹中充, 中野義昭

    エレクトロニクス実装学会講演大会講演論文集   20th   69 - 70   2006年3月 (   ISSN:1880-4616 )

     詳細

    記述言語:日本語  

    DOI: 10.11486/ejisso.20.0.69.0

  • C-3-23 MMI光フリップ・フロップを用いた全光パケット・スイッチング(光信号処理・波長変換,C-3.光エレクトロニクス,一般講演)

    竹中 充, 武田 浩司, 中野 義昭

    電子情報通信学会総合大会講演論文集   2006 ( 1 )   158 - 158   2006年3月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • B-12-24 4x4マトリクススイッチを用いた光バーストスイッチングノードの衝突回避の実証(B-12.フォトニックネットワーク,一般講演)

    アルアミン アブドゥッラー, 清水 克宏, 田中 俊輔, 竹中 充, 中野 義昭

    電子情報通信学会総合大会講演論文集   2006 ( 2 )   465 - 465   2006年3月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • 4x4マトリクススイッチを用いた光バーストスイッチングノードの衝突回避の実証

    AL AMIN Abdullah, 清水克宏, 田中俊輔, 竹中充, 中野義昭

    電子情報通信学会大会講演論文集   2006 ( 2 )   465 - 465   2006年3月 (   ISSN:1349-1369 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • C-4-15 球レンズ装荷裏面入射型高速受光アレイ素子の試作(C-4.レーザ・量子エレクトロニクス,一般講演)

    西出 和広, 池田 健志, 宋 学良, 王 書栄, 中野 義昭

    電子情報通信学会総合大会講演論文集   2006 ( 1 )   259 - 259   2006年3月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • C-3-61 高密度ピッチ変換光ファイバアレイ"OPLEAF"の開発(2)(導波路デバイス(2),C-3.光エレクトロニクス,一般講演)

    広井 典良, 薗部 忠, 竹中 充, 藤田 博之, 中野 義昭

    電子情報通信学会総合大会講演論文集   2006 ( 1 )   196 - 196   2006年3月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • C-3-59 金属磁性による非相反SPPモード(導波路デバイス(2),C-3.光エレクトロニクス,一般講演)

    堀口 勝正, 片桐 祥雅, 中野 義昭, 光岡 靖幸, 小林 郁太郎

    電子情報通信学会総合大会講演論文集   2006 ( 1 )   194 - 194   2006年3月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • 特集に寄せて(<特集>ここまできた光回路実装の標準化-JPCAにおける標準化の最新動向)

    中野 義昭

    エレクトロニクス実装学会誌   9 ( 2 )   81 - 99   2006年3月 (   ISSN:1343-9677 )

     詳細

    記述言語:日本語   出版者・発行元:社団法人エレクトロニクス実装学会  

    DOI: 10.5104/jiep.9.86

  • InGaAsP/InP系MOVPE選択成長の気相拡散・表面拡散複合成長モデル

    塩田倫也, 杉山正和, 霜垣幸浩, 中野義昭

    化学工学会年会研究発表講演要旨集   71st   332   2006年2月

     詳細

    記述言語:日本語  

  • 特集に寄せて

    中野 義昭

    エレクトロニクス実装学会誌   9 ( 2 )   81 - 81   2006年 (   ISSN:1343-9677 )

     詳細

    出版者・発行元:The Japan Institute of Electronics Packaging  

  • GaAs選択MOVPE成長における不純物添加ガスの影響

    宋 海政, 杉山 正和, 中野 義昭, 霜垣 幸浩

    化学工学会 研究発表講演要旨集   2006 ( 0 )   798 - 798   2006年

     詳細

    記述言語:日本語   出版者・発行元:The Society of Chemical Engineers, Japan  

    DOI: 10.11491/scej.2006f.0.798.0

  • OPLEAFによる光ICとテープファイバの高密度実装

    広井 典良, 薗部 忠, 藤田 博之, 竹中 充, 中野 義昭

    エレクトロニクス実装学術講演大会講演論文集   20 ( 0 )   69 - 71   2006年

     詳細

    出版者・発行元:The Japan Institute of Electronics Packaging  

    最近、光ICの研究開発報告が盛んである。この光ICを通常の光ファイバアレイと接続する場合、光ファイバアレイの導波路間隔は250μmのため、導波路面積が非常に大きくなり、コストが激増し、さらに導波路部の伝搬損失大きくなってしまう。この問題を解決するため、我々はOPLEAFを提案する。OPLEAFは通常のテープファイバを細径化し並べなおすことで、光ICのチップ面積を大幅に減少することが可能である。同時に光IC内部の導波損失を低減できる。今回試作したOPLEAFは、テープファイバをウェットエッチングで細径化した後、深掘りSi基板に挿入しUV硬化接着剤で固定した。また先端はSi製V溝で整列させた。この結果、30μmピッチのファイバアレイを作製できた。OPLEAFの伝搬損失を測定した結果、BPM計算による設計値に近い値が得られた。またOPLEAFによる高密度光ICパッケージを示すことができた。

    DOI: 10.11486/ejisso.20.0.69.0

  • 選択成長を利用したInP-MOVPEプロセスの解析

    王 云鵬, 宋 海政, 杉山 正和, 中野 義昭, 霜垣 幸浩

    化学工学会 研究発表講演要旨集   2006 ( 0 )   799 - 799   2006年

     詳細

    記述言語:日本語   出版者・発行元:The Society of Chemical Engineers, Japan  

    DOI: 10.11491/scej.2006f.0.799.0

  • 高速光スイッチと共有型波長変換器を用いた光バーストスイッチングノードの開発(フォトニックネットワーク(IP+オプティカル)システム, 光ルーティング技術, 一般)

    清水 克宏, アブドゥッラー アルアミン, 竹中 充, 猪原 涼, 西村 公佐, 堀内 幸夫, 宇佐見 正士, 瀧田 裕, 甲斐 雄高, 青木 泰彦, 尾中 寛, 宮原 利治, 八田 竜夫, 本島 邦明, 中野 義昭

    電子情報通信学会技術研究報告. PN, フォトニックネットワーク   105 ( 471 )   65 - 70   2005年12月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    ネットワークリソースの効率利用を目的とした光バーストスイッチングノードを開発した。インバンドSCM方式のラベル処理技術、高速光スイッチ、高速波長変換器を用いることにより、10Gbpsにおける良好なルーティング動作、衝突回避動作を確認した。また、各デバイスが、ノートの多段接続を実現するポテンシャルを持つことを示した。

  • 高速光スイッチと共有型波長変換器を用いた光バーストスイッチングノードの開発

    清水克宏, AL AMIN Abdullah, 竹中充, 猪原涼, 西村公佐, 堀内幸夫, 宇佐見正士, 瀧田裕, 甲斐雄高, 青木泰彦, 尾中寛, 宮原利治, 八田竜夫, 本島邦明, 中野義昭

    電子情報通信学会技術研究報告   105 ( 471(PN2005 46-61) )   65 - 70   2005年12月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    ネットワークリソースの効率利用を目的とした光バーストスイッチングノードを開発した。インバンドSCM方式のラベル処理技術、高速光スイッチ、高速波長変換器を用いることにより、10Gbpsにおける良好なルーティング動作、衝突回避動作を確認した。また、各デバイスが、ノートの多段接続を実現するポテンシャルを持つことを示した。

  • 光情報通信を支える規格/標準 光回路実装の国内および国際標準化動向=日本発の標準をめざして=

    中野義昭, 高原秀行

    光アライアンス   16 ( 11 )   1 - 3   2005年11月 (   ISSN:0917-026X )

     詳細

    記述言語:日本語   出版者・発行元:日本工業出版  

  • 光回路実装の国内および国際標準化動向--日本発の標準をめざして (特集:光情報通信を支える規格/標準)

    中野 義昭, 高原 秀行

    光アライアンス   16 ( 11 )   1 - 3   2005年11月 (   ISSN:0917-026X )

     詳細

    記述言語:日本語   出版者・発行元:日本工業出版  

  • C-3-35 能動MMI型全光フリップ・フロップおよびマッハ・ツェンダー型SOAを用いた信号再生型波長変換動作(C-3. 光エレクトロニクス(光スイッチ), エレクトロニクス1)

    竹中 充, レイバン モーラ, 武田 浩司, イット フーチョン, 宋 学良, 中野 義昭

    電子情報通信学会ソサイエティ大会講演論文集   2005 ( 1 )   179 - 179   2005年9月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • BS-6-1 波長変換共有型光バーストスイッチングノードの設計と縦続接続性の評価(BS-6.光バーストスイッチング技術の進展とグリッドネットワーク応用への期待, 通信2)

    アルアミン アブドゥッラー, 清水 克宏, グアルド エリック, 竹中 充, 中野 義昭

    電子情報通信学会ソサイエティ大会講演論文集   2005 ( 2 )   "S - 54"-"S-55"   2005年9月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • C-3-34 選択MOVPEによるモノリシック集積型マイケルソンSOA全光スイッチにおける時分DEMUX動作(C-3. 光エレクトロニクス(光スイッチ), エレクトロニクス1)

    イット フーチョン, 宋 学良, 宋 海政, 杉山 正和, 中野 義昭

    電子情報通信学会ソサイエティ大会講演論文集   2005 ( 1 )   178 - 178   2005年9月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • CS-8-7 DBR MMI双安定レーザ構造集積全光フリップフロップの設計と予備試作(CS-8. ナノスケール光集積回路技術の展望, エレクトロニクス1)

    レイバン モーラ, 竹中 充, バルトン ジョナサン S, 宋 学良, 武田 浩司, 中野 義昭

    電子情報通信学会ソサイエティ大会講演論文集   2005 ( 1 )   "S - 81"-"S-82"   2005年9月

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

  • CS-8-10 非相反損失変化に基づく集積化可能な導波路型光アイソレータ(CS-8. ナノスケール光集積回路技術の展望, エレクトロニクス1)

    清水 大雅, 雨宮 智宏, ハイ ファムナム, 横山 正史, 田中 雅明, 中野 義昭

    電子情報通信学会ソサイエティ大会講演論文集   2005 ( 1 )   "S - 87"-"S-88"   2005年9月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • InGaAsP/InP系MOVPE選択成長のモデリングにおける表面拡散の影響

    塩田倫也, SONG Xueliang, AMIN A. Al, AMIN A. Al, 杉山正和, 霜垣幸浩, 中野義昭

    応用物理学会学術講演会講演予稿集   66th ( 1 )   244   2005年9月

     詳細

    記述言語:日本語  

  • MOVPE‐InGaP成長におけるIn表面偏析現象の解析とショットキー接合特性評価

    中野貴之, 市川磨, 杉山正和, 秦雅彦, 中野義昭, 霜垣幸浩

    応用物理学会学術講演会講演予稿集   66th ( 1 )   243   2005年9月

     詳細

    記述言語:日本語  

  • テーパーマスクを用いたMOVPE選択成長による半導体光増幅器の試作

    AL AMIN A, 塩田倫也, 杉山正和, 中野義昭

    応用物理学会学術講演会講演予稿集   66th ( 3 )   1030   2005年9月

     詳細

    記述言語:日本語  

  • マストランスポートInAsP量子細線のサイズおよび発光波長の制御

    中田宗樹, 大塚節文, 杉山正和, 中野義昭

    応用物理学会学術講演会講演予稿集   66th ( 3 )   1223   2005年9月

     詳細

    記述言語:日本語  

  • 非相反損失変化に基づく導波路光アイソレータと半導体レーザの集積化の検討

    清水大雅, 中野義昭

    応用物理学会学術講演会講演予稿集   66th ( 3 )   1040   2005年9月

     詳細

    記述言語:日本語  

  • 化合物半導体MOVPE法の表面反応メカニズム解析

    中野貴之, 杉山正和, 中野義昭, 霜垣幸浩

    化学工学会秋季大会研究発表講演要旨集(CD-ROM)   37th   J308   2005年9月

     詳細

    記述言語:日本語  

  • 非相反損失変化に基づく半導体導波路型光アイソレータ(量子効果型光デバイス・光集積化技術, 及び一般)

    清水 大雅, 中野 義昭

    電子情報通信学会技術研究報告. OPE, 光エレクトロニクス   105 ( 142 )   51 - 54   2005年6月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    ガーネット等の磁気光学効果を用いる光アイソレータは半導体レーザとの集積化が最も難しい素子の一つであるが、半導体レーザの安定動作や素子の縦続接続が必要な高機能モノリシック光集積回路の実現には不可欠な素子である。我々は、InGaAsP半導体光増幅器と強磁性金属の組み合わせという簡易な構成で、集積化に適した「非相反損失変化に基づくTEモード半導体導波路型光アイソレータ」を提案し、波長1550nmで14.7dB/mmの非相反損失変化の実証に初めて成功した。

  • 非相反損失変化に基づく半導体導波路型光アイソレータ

    清水大雅, 中野義昭

    電子情報通信学会技術研究報告   105 ( 142(OPE2005 14-26) )   51 - 54   2005年6月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語  

  • 非相反損失変化に基づく半導体導波路型光アイソレータ(量子効果型光デバイス・光集積化技術, 及び一般)

    清水 大雅, 中野 義昭

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   105 ( 143 )   51 - 54   2005年6月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    ガーネット等の磁気光学効果を用いる光アイソレータは半導体レーザとの集積化が最も難しい素子の一つであるが、半導体レーザの安定動作や素子の縦続接続が必要な高機能モノリシック光集積回路の実現には不可欠な素子である。我々は、InGaAsP半導体光増幅器と強磁性金属の組み合わせという簡易な構成で、集積化に適した「非相反損失変化に基づくTEモード半導体導波路型光アイソレータ」を提案し、波長1550nmで14.7dB/mmの非相反損失変化の実証に初めて成功した。

  • 光パケット・ルーティングに向けた能動多モード干渉カプラ型光フリップ・フロップの縦続接続性に関する検討

    竹中充, RABURN Maura, 中野義昭

    電子情報通信学会技術研究報告   105 ( 77(PN2005 7-19) )   7 - 10   2005年5月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    光フリップ・フロップを用いて光パケット・ルーティングや光RAMなどの機能を実現するためには、光フリップ・フロップの出力で直接他の全光デバイスを駆動することが求められる。今回、我々がこれまでに提案、実証してきた能動多モード干渉カプラ型光フリップ・フロップで半導体光増幅器を駆動することで、相互利得変調による波長変換動作が得られることを実験的に確認した。これにより、光フリップ・フロップが高い縦続接続性を有し、光パケットのセルフ・ルーティングに利用できることを実証した。

  • 光パケット・ルーティングに向けた能動多モード干渉カプラ型 : 光フリップ・フロップの縦続接続性に関する検討(MPλ(Lambda)S、フォトニックネットワーク/制御、光波長変換、スイッチング、一般)

    竹中 充, レイバン モーラ, 中野 義昭

    電子情報通信学会技術研究報告. PN, フォトニックネットワーク   105 ( 77 )   7 - 10   2005年5月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    光フリップ・フロップを用いて光パケット・ルーティングや光RAMなどの機能を実現するためには、光フリップ・フロップの出力で直接他の全光デバイスを駆動することが求められる。今回、我々がこれまでに提案、実証してきた能動多モード干渉カプラ型光フリップ・フロップで半導体光増幅器を駆動することで、相互利得変調による波長変換動作が得られることを実験的に確認した。これにより、光フリップ・フロップが高い縦続接続性を有し、光パケットのセルフ・ルーティングに利用できることを実証した。

  • GRIN‐SCH構造によるMOVPE選択成長光導波路の内部損失低減

    ZHANG Zhenrui, SONG Xueliang, YIT Foocheong, 竹中充, 杉山正和, 中野義昭

    応用物理学関係連合講演会講演予稿集   52nd ( 3 )   1353   2005年3月

     詳細

    記述言語:日本語  

  • InGaAsP/InP半導体光増幅器導波路におけるTEモード非相反損失現象の初の実証

    清水大雅, 中野義昭

    応用物理学関係連合講演会講演予稿集   52nd ( 3 )   1340   2005年3月

     詳細

    記述言語:日本語  

  • MOVPE選択成長のモデリングを用いたInGaAsP/InP系選択成長の特性予測

    塩田倫也, AL AMIN Abdullah, 杉山正和, 霜垣幸浩, 中野義昭

    応用物理学関係連合講演会講演予稿集   52nd ( 1 )   362   2005年3月

     詳細

    記述言語:日本語  

  • MOVPE法における結晶成長中での表面反応メカニズムの解明(4)

    中野貴之, 杉山正和, 中野義昭, 霜垣幸浩

    応用物理学関係連合講演会講演予稿集   52nd ( 1 )   370   2005年3月

     詳細

    記述言語:日本語  

  • MOVPE成長GaN/AlN多重量子井戸中のサブバンド間遷移に寄与する電子密度の評価

    大谷洋, KUMTORNKITTIKUL C, 杉山正和, 中野義昭

    応用物理学関係連合講演会講演予稿集   52nd ( 1 )   424   2005年3月

     詳細

    記述言語:日本語  

  • TMモード非相反伝搬損失導波路の作製と実証

    雨宮智宏, 清水大雅, 中野義昭

    応用物理学関係連合講演会講演予稿集   52nd ( 3 )   1341   2005年3月

     詳細

    記述言語:日本語  

  • マッハ・ツェンダ型SOA全光スイッチにおける4バンドギャップモノリシック集積

    YIT FooCheong, SONG Xueliang, ZHANG Zhenrui, SONG Haizheng, 杉山正和, 中野義昭

    応用物理学関係連合講演会講演予稿集   52nd ( 3 )   1344   2005年3月

     詳細

    記述言語:日本語  

  • 光IC用高密度ピッチ変換光ファイバアレイの開発

    広井典良, 薗部忠, 藤田博之, 竹中充, 中野義昭

    応用物理学関係連合講演会講演予稿集   52nd ( 3 )   1326   2005年3月

     詳細

    記述言語:日本語  

  • 半導体/強磁性金属ハイブリッドによる光通信波長帯導波路型光アイソレータ

    清水大雅, 中野義昭

    応用物理学関係連合講演会講演予稿集   52nd ( 0 )   99   2005年3月

     詳細

    記述言語:日本語  

  • 多モード干渉カプラ型双安定レーザおよび半導体光増幅器を用いた信号再生波長変換器の検討

    竹中充, RABURN M, 中野義昭

    応用物理学関係連合講演会講演予稿集   52nd ( 3 )   1343   2005年3月

     詳細

    記述言語:日本語  

  • C-3-30 光IC用高密度ピッチ変換光ファイバアレイ"OPLEAF"の開発(C-3. 光エレクトロニクス, エレクトロニクス1)

    広井 典良, 薗部 忠, 竹中 充, 藤田 博之, 中野 義昭

    電子情報通信学会総合大会講演論文集   2005 ( 1 )   200 - 200   2005年3月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • C-3-19 選択成長による光合分波器と半導体光増幅器の集積化(C-3. 光エレクトロニクス, エレクトロニクス1)

    櫻井 謙司, アルアミン アブドゥッラー, 塩田 倫也, 杉山 正和, 中野 義昭

    電子情報通信学会総合大会講演論文集   2005 ( 1 )   189 - 189   2005年3月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • 光IC用高密度ピッチ変換光ファイバアレイ“OPLEAF”の開発

    広井典良, 薗部忠, 竹中充, 藤田博之, 中野義昭

    電子情報通信学会大会講演論文集   2005   200   2005年3月 (   ISSN:1349-1369 )

     詳細

    記述言語:日本語  

  • InGaAsP選択成長における量子井戸発光波長の予測

    塩田倫也, 杉山正和, 霜垣幸浩, 中野義昭

    化学工学会年会研究発表講演要旨集   70th   561 - 566   2005年2月

     詳細

    記述言語:日本語   出版者・発行元:公益社団法人 化学工学会  

    DOI: 10.11491/scej.2005.0.566.0

  • 時間変調成長による化合物半導体MOVPE法の表面反応メカニズム解析

    中野貴之, 杉山正和, 中野義昭, 霜垣幸浩

    化学工学会年会研究発表講演要旨集   70th   563 - 568   2005年2月

     詳細

    記述言語:日本語   出版者・発行元:公益社団法人 化学工学会  

    DOI: 10.11491/scej.2005.0.568.0

  • InP系アレイ導波路合分波器の試作とMOVPE選択成長による能動素子集積化の検討(光集積回路/素子, スイッチング, PLC, ファイバ型デバイス, 導波路解析, 一般)

    櫻井 謙司, Abdullah Al Amin, 櫻井 貴志, 杉山 正和, 中野 義昭

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   104 ( 611 )   7 - 10   2005年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    多重量子井戸(MQW)をコアに持つInP系100GHz間隔32チャンネルAWGを試作し、動作確認を行った。AWGのサイズは4.8mm×2.2mm、クロストークは-20dBであった。MQW構造を持つ導波路は選択成長(SA-MOVPE)を用いる事により、バンドギャップの異なる領域を一回の成長で形成できるため、AWGとSOA等の能動素子との集積化が容易である。今回はこの選択成長における平坦領域上にAWGを作製している。

  • InP系アレイ導波路合分波器の試作とMOVPE選択成長による能動素子集積化の検討

    桜井謙司, ABDULLAH A A, 桜井貴司, 杉山正和, 中野義昭

    電子情報通信学会技術研究報告   104 ( 605(OFT2004 104-116) )   7 - 10   2005年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    多重量子井戸(MQW)をコアに持つInP系100GHz間隔32チャンネルAWGを試作し、動作確認を行った。AWGのサイズは4.8mm×2.2mm、クロストークは-20dBであった。MQW構造を持つ導波路は選択成長(SA-MOVPE)を用いる事により、バンドギャップの異なる領域を一回の成長で形成できるため、AWGとSOA等の能動素子との集積化が容易である。今回はこの選択成長における平坦領域上にAWGを作製している。

  • InP系アレイ導波路合分波器の試作とMOVPE選択成長による能動素子集積化の検討(光集積回路/素子, スイッチング, PLC, ファイバ型デバイス, 導波路解析, 一般)

    櫻井 謙司, Abdullah Al Amin, 櫻井 貴志, 杉山 正和, 中野 義昭

    電子情報通信学会技術研究報告. OPE, 光エレクトロニクス   104 ( 608 )   7 - 10   2005年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    多重量子井戸(MQW)をコアに持つInP系100GHz間隔32チャンネルAWGを試作し、動作確認を行った。AWGのサイズは4.8mm×2.2mm、クロストークは-20dBであった。MQW構造を持つ導波路は選択成長(SA-MOVPE)を用いる事により、バンドギャップの異なる領域を一回の成長で形成できるため、AWGとSOA等の能動素子との集積化が容易である。今回はこの選択成長における平坦領域上にAWGを作製している。

  • InP系アレイ導波路合分波器の試作とMOVPE選択成長による能動素子集積化の検討(光集積回路/素子, スイッチング, PLC, ファイバ型デバイス, 導波路解析, 一般)

    櫻井 謙司, Abdullah Al Amin, 櫻井 貴志, 杉山 正和, 中野 義昭

    電子情報通信学会技術研究報告. PN, フォトニックネットワーク   104 ( 602 )   7 - 10   2005年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    多重量子井戸(MQW)をコアに持つInP系100GHz間隔32チャンネルAWGを試作し、動作確認を行った。AWGのサイズは4.8mm×2.2mm、クロストークは-20dBであった。MQW構造を持つ導波路は選択成長(SA-MOVPE)を用いる事により、バンドギャップの異なる領域を一回の成長で形成できるため、AWGとSOA等の能動素子との集積化が容易である。今回はこの選択成長における平坦領域上にAWGを作製している。

  • InP系アレイ導波路合分波器の試作とMOVPE選択成長による能動素子集積化の検討(光集積回路/素子, スイッチング, PLC, ファイバ型デバイス, 導波路解析, 一般)

    櫻井 謙司, Abdullah Al Amin, 櫻井 貴志, 杉山 正和, 中野 義昭

    電子情報通信学会技術研究報告. OFT, 光ファイバ応用技術   104 ( 605 )   7 - 10   2005年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    多重量子井戸(MQW)をコアに持つInP系100GHz間隔32チャンネルAWGを試作し、動作確認を行った。AWGのサイズは4.8mm×2.2mm、クロストークは-20dBであった。MQW構造を持つ導波路は選択成長(SA-MOVPE)を用いる事により、バンドギャップの異なる領域を一回の成長で形成できるため、AWGとSOA等の能動素子との集積化が容易である。今回はこの選択成長における平坦領域上にAWGを作製している。

  • All optical switching in GaInAsP/InP DFB waveguides

    Tetsuya Mizumoto, Tetsuya Mizumoto, J. K. Seo, S. Arai, S. Arai, Y. Nakano

    Optics InfoBase Conference Papers   2005年1月

     詳細

    The all-optical switching device based on an intensity-dependent refractive index change in a GaInAsP/InP highmesa DFB waveguide is investigated with a vertical-groove grating structure. The bistable operation is demonstrated with an on/off extinction ratio of 10dB. Also, its temporal response is investigated with a short pump pulse. © 2005 Optical Society of America.

  • MOVPE growth of AlN by pulse injection method and improvement of crystalline quality

    中野 義昭

    Abstracts of the 2005 JST CREST Symposium on Functional Evolution of Materials an Devices Based on Electron/Photon Related Phenomena(FEMD)   132   2005年

  • 化合物半導体MOVPE法の表面反応メカニズム解析

    中野 貴之, 杉山 正和, 中野 義昭, 霜垣 幸浩

    化学工学会 研究発表講演要旨集   2005 ( 0 )   954 - 954   2005年

     詳細

    記述言語:日本語   出版者・発行元:The Society of Chemical Engineers, Japan  

  • 半導体デジタル全光デバイス・集積回路の研究開発 平成14‐16年度

    中野義昭

    半導体デジタル全光デバイス・集積回路の研究開発 平成14-16年度 No.14205055   153P   2005年

     詳細

    記述言語:日本語  

  • 化合物半導体集積光デバイスとドライエッチング技術

    杉山 正和, アルーアミン アブドゥッラー, 櫻井 謙司, 宋 学良, イット フーチョン, 李 寧, 脇 一太郎, 霜垣 幸浩, 中野 義昭

    真空   48 ( 9 )   511 - 518   2005年 (   ISSN:0559-8516 )

     詳細

    記述言語:英語   出版者・発行元:The Vacuum Society of Japan  

    DOI: 10.3131/jvsj.48.511

  • 化合物半導体集積光デバイスとドライエッチング技術

    杉山正和, AL AMIN Abdullah, 桜井謙司, SONG Xueliang, YIT Foo Cheong, LI Ning, 脇一太郎, 霜垣幸浩, 中野義昭

    真空   48 ( 9 )   511 - 518   2005年 (   ISSN:0559-8516 )

     詳細

    記述言語:英語  

    DOI: 10.3131/jvsj.48.511

  • 時間変調成長による化合物半導体MOVPE法の表面反応メカニズム解析

    中野 貴之, 杉山 正和, 中野 義昭, 霜垣 幸浩

    化学工学会 研究発表講演要旨集   2005 ( 0 )   568 - 568   2005年

     詳細

    記述言語:日本語   出版者・発行元:The Society of Chemical Engineers, Japan  

    DOI: 10.11491/scej.2005.0.568.0

  • 選択成長を用いた表面反応速度の解析:GaAs MOCVDにおける温度・基板面方位の効果

    宋 海政, 宋 学良, 杉山 正和, 中野 義昭, 霜垣 幸浩

    化学工学会 研究発表講演要旨集   2005 ( 0 )   567 - 567   2005年

     詳細

    出版者・発行元:The Society of Chemical Engineers, Japan  

    DOI: 10.11491/scej.2005.0.567.0

  • 電子・光子等の機能制御 人工光物性に基づく新しい光子制御デバイス

    中野義昭

    電子・光子等の機能制御 平成11年度採択研究課題研究終了報告書 平成17年   244(1)-244(3),245-360   2005年

     詳細

    記述言語:日本語  

  • 高速光ワイヤレス通信用発光デバイス

    梁 吉鎬, 笹倉 賢, 中野 義昭

    光学   33 ( 10 )   601 - 603   2004年10月 (   ISSN:0389-6625 )

     詳細

    記述言語:日本語   出版者・発行元:応用物理学会分科会日本光学会  

  • 高速光ワイヤレス通信用発光デバイス

    LINAG J‐H, 笹倉賢, 中野義昭

    光学   33 ( 10 )   601 - 603   2004年10月 (   ISSN:0389-6625 )

     詳細

    記述言語:日本語   出版者・発行元:応用物理学会分科会日本光学会  

  • 非相反損失変化に基づくTEモード半導体導波路型光アイソレータ

    清水 大雅, 中野 義昭

    日本応用磁気学会学術講演概要集 = Digest of ... annual conference on magnetics in Japan   28   516 - 516   2004年9月

     詳細

    記述言語:日本語  

  • GaNのガス交互供給ECR‐RIEにおけるエッチング速度・エッチング面平坦性の改善

    阿波良基, 荒川太郎, 井手智祥, 杉山正和, 清水大雅, 霜垣幸浩, 中野義昭, 羽路伸夫, 多田邦雄

    応用物理学会学術講演会講演予稿集   65th ( 3 )   1249   2004年9月

     詳細

    記述言語:日本語  

  • MOVPE法における結晶成長中での表面反応メカニズムの解明(3)

    中野貴之, 杉山正和, 中野義昭, 霜垣幸浩

    応用物理学会学術講演会講演予稿集   65th ( 1 )   255   2004年9月

     詳細

    記述言語:日本語  

  • 化合物半導体のMOVPE選択成長における表面拡散の役割

    和気範明, 中野貴之, 杉山正和, 中野義昭, 霜垣幸浩

    応用物理学会学術講演会講演予稿集   65th ( 1 )   258   2004年9月

     詳細

    記述言語:日本語  

  • 非相反損失に基づくTEモード半導体導波路型光アイソレータの改良試作

    清水大雅, 中野義昭

    応用物理学会学術講演会講演予稿集   65th ( 3 )   1051   2004年9月

     詳細

    記述言語:日本語  

  • AWG波長多重・分離による光バーストスイッチング・ノードの透明性の変化(フォトニックネットワーク制御・設計,一般)

    グアルド エリック, 中野 義昭

    電子情報通信学会技術研究報告. PN, フォトニックネットワーク   104 ( 255 )   81 - 85   2004年8月 (   ISSN:0913-5685 )

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    In this paper, we discuss the transparency of optical burst switching (OBS) nodes, which is their ability to forward the optical data with minimum degradation. In order to decrease costs of OBS networks, we propose to share regenerators among the different wavelength channels. The number of required regenerators can thus be reduced if the transparency of each node is carefully optimized. Transparency of an OBS node architecture is investigated by 40Gb/s-transmission simulations. Flat-top AWGs are shown to provide superior filter concatenation performance, and to allow cascading up to 9 nodes while maintaining a Q-factor larger than 15.6dB. We also show that the chromatic dispersion of AWGs is accumulated during cascading through several nodes, which makes preferable a hop-by-hop dispersion compensation scheme.

  • OFC2004(デバイス)

    中野義昭, 竹中充

    オプトニューズ   2004 ( 4 )   38 - 39   2004年7月

     詳細

    記述言語:日本語  

  • 光技術動向調査

    河田聡, 田口剣申, 中野義昭, 山岸長保, 高田篤, 北山賢一, 渡辺正信, 野口幸男, 川井隆志

    オプトニューズ   2004 ( 3 )   22 - 37   2004年6月

     詳細

    記述言語:日本語  

  • Shortest intersubband transition wavelength (1.68 mu m) achieved in AlN/GaN multiple quantum wells by metalorganic vapor phase epitaxy (vol 82, pg 4465, 2003)

    Waki, I, C Kumtornkittikul, Y Shimogaki, Y Nakano

    APPLIED PHYSICS LETTERS   84 ( 18 )   3703 - 3703   2004年5月 (   ISSN:0003-6951 )

     詳細

    記述言語:英語   出版者・発行元:AMER INST PHYSICS  

    DOI: 10.1063/1.1748852

  • 光ワイヤレス通信用発光・受光素子

    中野 義昭

    日本赤外線学会誌 = Journal of the Japan Society of Infraed Science and Technolog   13 ( 2 )   67 - 73   2004年4月 (   ISSN:0916-7900 )

     詳細

    記述言語:日本語   出版者・発行元:日本赤外線学会  

  • 光ワイヤレス通信用発光・受光素子

    中野義昭

    日本赤外線学会誌   13 ( 2 )   67 - 73   2004年4月 (   ISSN:0916-7900 )

     詳細

    記述言語:日本語   出版者・発行元:日本赤外線学会  

  • InGaAs/InAlAs MQW‐EA変調器における光誘起屈折率変化の測定

    金子慎, 清水大雅, 中野義昭

    応用物理学関係連合講演会講演予稿集   51st ( 3 )   1308   2004年3月

     詳細

    記述言語:日本語  

  • MOVPE法における結晶成長中での表面反応メカニズムの解明(2)

    中野貴之, 杉山正和, 中野義昭, 霜垣幸浩

    応用物理学関係連合講演会講演予稿集   51st ( 1 )   336   2004年3月

     詳細

    記述言語:日本語  

  • マストランスポートInAsP量子細線のバンド構造に対するひずみの効果

    大塚節文, 中野義昭

    応用物理学関係連合講演会講演予稿集   51st ( 3 )   1269   2004年3月

     詳細

    記述言語:日本語  

  • 化合物半導体のMOVPE選択成長における異常成長制御

    和気範明, 中野貴之, OH H‐J, 杉山正和, 中野義昭, 霜垣幸浩

    応用物理学関係連合講演会講演予稿集   51st ( 1 )   335   2004年3月

     詳細

    記述言語:日本語  

  • 方向性結合器型半導体レーザの小型化による全光フリップ・フロップの特性改善

    竹中充, RABURN M, 中野義昭

    応用物理学関係連合講演会講演予稿集   51st ( 3 )   1316   2004年3月

     詳細

    記述言語:日本語  

  • 電流狭窄層をもったリッジ型半導体レーザの最適設計シミュレーション

    奈良田新一, DARJA J, CHEN N, 中野義昭

    応用物理学関係連合講演会講演予稿集   51st ( 3 )   1273   2004年3月

     詳細

    記述言語:日本語  

  • C-4-30 多モード干渉カプラ型双安定半導体レーザを用いた全光フリップ・フロップ動作(C-4.レーザ・量子エレクトロニクス)

    竹中 充, レイバン モーラ, 中野 義昭

    電子情報通信学会総合大会講演論文集   2004 ( 1 )   358 - 358   2004年3月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • SC-5-5 金属光導波路におけるSPP-mode伝播損失の評価(SC-5.新技術・新材料の光デバイスへの応用)

    新見 隆男, 小林 郁太郎, 中野 義昭, 片桐 祥雅, 光岡 靖幸

    電子情報通信学会総合大会講演論文集   2004 ( 1 )   "S - 71"   2004年3月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • 化合物半導体のMOVPE選択成長における異常成長制御

    和気範明, 中野貴之, OH H, 杉山正和, 中野義昭, 霜垣幸浩

    化学工学会年会研究発表講演要旨集   69th   547   2004年3月

     詳細

    記述言語:日本語  

  • 時間変調成長によるMOVPE表面反応メカニズムの解明

    中野貴之, 杉山正和, 中野義昭, 霜垣幸浩

    化学工学会年会研究発表講演要旨集   69th   546   2004年3月

     詳細

    記述言語:日本語  

  • 光ワイヤレス通信技術の新展開 光ワイヤレス通信技術調査委員会の活動から (4) 光ワイヤレス通信用デバイス

    中野義昭

    オプトニューズ   2004 ( 1 )   22 - 27   2004年2月

     詳細

    記述言語:日本語  

  • GaInAsP‐DFB導波路の光強度依存屈折率変化とその時間応答特性の測定

    SEO J‐K, 水本哲弥, 竹中充, 中野義昭

    電子情報通信学会技術研究報告   103 ( 617(OPE2003 243-257) )   69 - 74   2004年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語  

  • GaInAsP-DFB導波路の光強度依存屈折率変化とその時間応答特性の測定

    徐 在國, 水本 哲弥, 竹中 充, 中野 義昭

    電気学会研究会資料. EMT, 電磁界理論研究会   2004 ( 13 )   69 - 74   2004年1月

     詳細

    記述言語:英語  

  • 多モード干渉カプラを有する双安定性半導体レーザによる全光フリップ・フロップの実現

    竹中充, 中野義昭

    電子情報通信学会技術研究報告   103 ( 617(OPE2003 243-257) )   61 - 64   2004年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語  

  • 多モード干渉カプラを有する双安定性半導体レーザによる全光フリップ・フロップの実現

    竹中 充, 中野 義昭

    電気学会研究会資料. EMT, 電磁界理論研究会   2004 ( 13 )   61 - 64   2004年1月

     詳細

    記述言語:日本語  

  • GaInAsP-DFB導波路の光強度依存屈折率変化とその時間応各特性の測定(フォトニックNW・デバイス,フォトニック結晶・ファイバとその応用,集積光回路,半導体光導波路素子,PLC,ファイバ型デバイス,導波路解析,その他)

    徐 在國, 水本 哲弥, 竹中 充, 中野 義昭

    電子情報通信学会技術研究報告. PN, フォトニックネットワーク   103 ( 611 )   69 - 74   2004年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    全光スイッチは、高速・大容量フォトニックネットワークへの移行に向け、必要不可欠なキーデバイスとして実現が期待される。これまでGaInAsP/InP分布帰還構造導波路中の屈折率が光強度によって変化する効果を利用して、全光スイッチングデバイスの動作実証を報告してきた。しかし、このデバイスの動作速度に関しては実験的に明らかにされていない。GaInAsP/InP導波路形全光スイッチングデバイスを形成するために、GaInAsPの光強度に依存した吸収変化と屈折率変化を明確にする必要がある。本報告では、光強度依存屈折率変化を測定するための基本として、DFB導波路中で1550nm帯のポンプ光によって誘起されるプローブ光の吸収変化測定結果を示す。また、ピコ秒オーダーのポンプパルスを用い、DFB導波路におけるプローブ光透過率の時間的変化を測定した結果について報告する。

  • GaInAsP-DFB導波路の光強度依存屈折率変化とその時間応各特性の測定(フォトニックNW・デバイス,フォトニック結晶・ファイバとその応用,集積光回路,半導体光導波路素子,PLC,ファイバ型デバイス,導波路解析,その他)

    徐 在國, 水本 哲弥, 竹中 充, 中野 義昭

    電子情報通信学会技術研究報告. OFT, 光ファイバ応用技術   103 ( 614 )   69 - 74   2004年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    全光スイッチは、高速・大容量フォトニックネットワークへの移行に向け、必要不可欠なキーデバイスとして実現が期待される。これまでGaInAsP/InP分布帰還構造導波路中の屈折率が光強度によって変化する効果を利用して、全光スイッチングデバイスの動作実証を報告してきた。しかし、このデバイスの動作速度に関しては実験的に明らかにされていない。GaInAsP/InP導波路形全光スイッチングデバイスを形成するために、GaInAsPの光強度に依存した吸収変化と屈折率変化を明確にする必要がある。本報告では、光強度依存屈折率変化を測定するための基本として、DFB導波路中で1550nm帯のポンプ光によって誘起されるプローブ光の吸収変化測定結果を示す。また、ピコ秒オーダーのポンプパルスを用い、DFB導波路におけるプローブ光透過率の時間的変化を測定した結果について報告する。

  • GaInAsP-DFB導波路の光強度依存屈折率変化とその時間応各特性の測定(フォトニックNW・デバイス,フォトニック結晶・ファイバとその応用,集積光回路,半導体光導波路素子,PLC,ファイバ型デバイス,導波路解析,その他)

    徐 在國, 水本 哲弥, 竹中 充, 中野 義昭

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   103 ( 620 )   69 - 74   2004年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    全光スイッチは、高速・大容量フォトニックネットワークへの移行に向け、必要不可欠なキーデバイスとして実現が期待される。これまでGaInAsP/InP分布帰還構造導波路中の屈折率が光強度によって変化する効果を利用して、全光スイッチングデバイスの動作実証を報告してきた。しかし、このデバイスの動作速度に関しては実験的に明らかにされていない。GaInAsP/InP導波路形全光スイッチングデバイスを形成するために、GaInAsPの光強度に依存した吸収変化と屈折率変化を明確にする必要がある。本報告では、光強度依存屈折率変化を測定するための基本として、DFB導波路中で1550nm帯のポンプ光によって誘起されるプローブ光の吸収変化測定結果を示す。また、ピコ秒オーダーのポンプパルスを用い、DFB導波路におけるプローブ光透過率の時間的変化を測定した結果について報告する。

  • GaInAsP-DFB導波路の光強度依存屈折率変化とその時間応各特性の測定(フォトニックNW・デバイス,フォトニック結晶・ファイバとその応用,集積光回路,半導体光導波路素子,PLC,ファイバ型デバイス,導波路解析,その他)

    徐 在國, 水本 哲弥, 竹中 充, 中野 義昭

    電子情報通信学会技術研究報告. OPE, 光エレクトロニクス   103 ( 617 )   69 - 74   2004年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    全光スイッチは、高速・大容量フォトニックネットワークへの移行に向け、必要不可欠なキーデバイスとして実現が期待される。これまでGaInAsP/InP分布帰還構造導波路中の屈折率が光強度によって変化する効果を利用して、全光スイッチングデバイスの動作実証を報告してきた。しかし、このデバイスの動作速度に関しては実験的に明らかにされていない。GaInAsP/InP導波路形全光スイッチングデバイスを形成するために、GaInAsPの光強度に依存した吸収変化と屈折率変化を明確にする必要がある。本報告では、光強度依存屈折率変化を測定するための基本として、DFB導波路中で1550nm帯のポンプ光によって誘起されるプローブ光の吸収変化測定結果を示す。また、ピコ秒オーダーのポンプパルスを用い、DFB導波路におけるプローブ光透過率の時間的変化を測定した結果について報告する。

  • 多モード干渉カプラを有する双安定性半導体レーザによる全光フリップ・フロップの実現(フォトニックNW・デバイス,フォトニック結晶・ファイバとその応用,集積光回路,半導体光導波路素子,PLC,ファイバ型デバイス,導波路解析,その他)

    竹中 充, 中野 義昭

    電子情報通信学会技術研究報告. PN, フォトニックネットワーク   103 ( 611 )   61 - 64   2004年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    光バケット・スイッチングにおいて全光フリップ・フロップは光メモリや光パケットのセルフ・ルーティング、ビット長変換などの機能を実現するデバイスとして期待されている。我々は全光フリップ・フロップを実現するために多モード干渉カプラを共振器とする双安定性半導体レーザを考案した。2つの発振モード間における相互利得抑制および可飽和吸収効果を利用することで、波長範囲1550nm-1565nm、入射強度0dBm程度のセット光およびリセット光によって発振モードが切り替わることを実験的に確かめ、光フリップ・フロップ動作を実証した。これにより光メモリやビット長変換としての機能を実現することに成功した。

  • 多モード干渉カプラを有する双安定性半導体レーザによる全光フリップ・フロップの実現(フォトニックNW・デバイス,フォトニック結晶・ファイバとその応用,集積光回路,半導体光導波路素子,PLC,ファイバ型デバイス,導波路解析,その他)

    竹中 充, 中野 義昭

    電子情報通信学会技術研究報告. OFT, 光ファイバ応用技術   103 ( 614 )   61 - 64   2004年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    光バケット・スイッチングにおいて全光フリップ・フロップは光メモリや光パケットのセルフ・ルーティング、ビット長変換などの機能を実現するデバイスとして期待されている。我々は全光フリップ・フロップを実現するために多モード干渉カプラを共振器とする双安定性半導体レーザを考案した。2つの発振モード間における相互利得抑制および可飽和吸収効果を利用することで、波長範囲1550nm-1565nm、入射強度0dBm程度のセット光およびリセット光によって発振モードが切り替わることを実験的に確かめ、光フリップ・フロップ動作を実証した。これにより光メモリやビット長変換としての機能を実現することに成功した。

  • 多モード干渉カプラを有する双安定性半導体レーザによる全光フリップ・フロップの実現(フォトニックNW・デバイス,フォトニック結晶・ファイバとその応用,集積光回路,半導体光導波路素子,PLC,ファイバ型デバイス,導波路解析,その他)

    竹中 充, 中野 義昭

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   103 ( 620 )   61 - 64   2004年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    光バケット・スイッチングにおいて全光フリップ・フロップは光メモリや光パケットのセルフ・ルーティング、ビット長変換などの機能を実現するデバイスとして期待されている。我々は全光フリップ・フロップを実現するために多モード干渉カプラを共振器とする双安定性半導体レーザを考案した。2つの発振モード間における相互利得抑制および可飽和吸収効果を利用することで、波長範囲1550nm-1565nm、入射強度0dBm程度のセット光およびリセット光によって発振モードが切り替わることを実験的に確かめ、光フリップ・フロップ動作を実証した。これにより光メモリやビット長変換としての機能を実現することに成功した。

  • 多モード干渉カプラを有する双安定性半導体レーザによる全光フリップ・フロップの実現(フォトニックNW・デバイス,フォトニック結晶・ファイバとその応用,集積光回路,半導体光導波路素子,PLC,ファイバ型デバイス,導波路解析,その他)

    竹中 充, 中野 義昭

    電子情報通信学会技術研究報告. OPE, 光エレクトロニクス   103 ( 617 )   61 - 64   2004年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    光バケット・スイッチングにおいて全光フリップ・フロップは光メモリや光パケットのセルフ・ルーティング、ビット長変換などの機能を実現するデバイスとして期待されている。我々は全光フリップ・フロップを実現するために多モード干渉カプラを共振器とする双安定性半導体レーザを考案した。2つの発振モード間における相互利得抑制および可飽和吸収効果を利用することで、波長範囲1550nm-1565nm、入射強度0dBm程度のセット光およびリセット光によって発振モードが切り替わることを実験的に確かめ、光フリップ・フロップ動作を実証した。これにより光メモリやビット長変換としての機能を実現することに成功した。

  • 「電子・光子等の機能制御」「人工光物性に基づく新しい光子制御デバイス」

    中野義昭

    戦略的創造研究推進事業研究年報(CD-ROM)   2002   1 - 11   2004年1月

     詳細

    記述言語:日本語  

  • (招待講演)ナノテク研究の新動向:デジタルフォトニクス(Invited : New trend in nano-technology : digital photonics)

    中野 義昭

    電子情報通信学会「次世代ナノ技術に関する研究専門委員会」第2回研究会講演資料集   35   2004年

  • 全光フリップフロップ

    中野義昭

    特許第3578737号   2004年

  • [招待論文]半導体能動導波路に基づくデジタルフォトニックデバイス(半導体レーザ及び光パッシブコンポネント, 及び一般)

    中野 義昭, 竹中 充, 宋 学良, 清水 大雅

    電子情報通信学会技術研究報告. OPE, 光エレクトロニクス   103 ( 524 )   85 - 85   2003年12月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • 半導体能動導波路に基づくデジタルフォトニックデバイス(半導体レーザ及び光パッシブコンポネント, 及び一般)

    中野 義昭, 竹中 充, 宋 学良, 清水 大雅

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   103 ( 527 )   85 - 85   2003年12月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • 全光スイッチング素子を目的をしたGaInAsPの光強度依存吸収変化/屈折率変化の測定

    徐 在國, 光本 哲弥, 竹野 充, 中野 義昭

    映像情報メディア学会技術報告   27 ( 56 )   53 - 58   2003年10月 (   ISSN:1342-6893 )

     詳細

    記述言語:日本語   出版者・発行元:映像情報メディア学会  

  • 全光スイッチング素子を目的としたGaInAsPの光強度依存吸収変化/屈折率変化の測定(光無線システム(ROF, FWA等),光映像伝送(CATV含む,光アクセスシステム),一般)

    徐 在國, 光本 哲弥, 竹中 充, 中野 義昭

    電子情報通信学会技術研究報告. OCS, 光通信システム   103 ( 349 )   53 - 57   2003年9月 (   ISSN:0913-5685 )

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    GaInAsP/InP導波路系全光スイッチングデバイスを形成するために、GaInAsPの光強度に依存した吸収変化と屈折率変化を明確にする必要がある。今回、1550nm帯のポンプ光パルスによって同じ波長帯のプローブ光が受ける吸収変化と屈折率変化について、その大きさと応答速度の測定を行った結果について、報告する。

  • 全光スイッチング素子を目的としたGaInAsPの光強度依存吸収変化/屈折率変化の測定

    徐 在國, 光本 哲弥, 竹中 充, 中野 義昭

    電子情報通信学会技術研究報告. OCS, 光通信システム   103 ( 349 )   53 - 57   2003年9月

     詳細

    記述言語:日本語  

  • 半導体デバイス用CVD薄膜生成のコンピュータシミュレーション―Soret(熱拡散)効果に注目したMOCVD膜生成の例―

    神保えみ, 菅原活郎, 杉山正和, 霜垣幸浩, 中野義昭, 小宮山宏, 江頭靖幸

    日本大学工学部紀要   45 ( 1 )   127 - 132   2003年9月 (   ISSN:1343-2885 )

     詳細

    記述言語:日本語   出版者・発行元:日本大学工学部工学研究所  

  • C-4-18 ポンプ-プローブ法を用いた GaInAsP DFB 導波路における非線形応答測定

    徐 在國, 鄭 錫煥, 水本 哲弥, 竹中 充, 中野 義昭

    電子情報通信学会ソサイエティ大会講演論文集   2003 ( 1 )   294 - 294   2003年9月

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • C-4-17 MOVPE 成長 AIN/GaN 多重量子井戸における 1.55μm のサブバンド間遷移

    脇一太郎, 脇 一太郎, 霜垣 幸浩, 中野 義昭

    電子情報通信学会ソサイエティ大会講演論文集   2003 ( 1 )   293 - 293   2003年9月

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

  • GaNのメタン・水素・アルゴン/酸素交互供給ECR反応性イオンエッチング

    井手智祥, 阿波良基, 荒川太郎, 羽路伸夫, 清水大雅, 杉山正和, 霜垣幸浩, 中野義昭, 多田邦雄

    応用物理学会学術講演会講演予稿集   64th ( 3 )   1278   2003年8月

     詳細

    記述言語:日本語  

  • GaInAsP/InP導波路におけるポンプ光誘起吸収変化の測定

    SEO J‐K, JEONG S‐H, 水本哲弥, 竹中充, 中野義昭

    応用物理学会学術講演会講演予稿集   64th ( 3 )   1083   2003年8月

     詳細

    記述言語:日本語  

  • InGaAsP方向性結合半導体光増幅器の改良試作とその波長変換特性

    YIT F C, 竹中充, SONG X L, 中野義昭

    応用物理学会学術講演会講演予稿集   64th ( 3 )   1086   2003年8月

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    記述言語:日本語  

  • MOVPE法による化合物半導体結晶成長における表面反応メカニズムの解明

    中野貴之, 福島康之, 杉山正和, 中野義昭, 霜垣幸浩

    応用物理学会学術講演会講演予稿集   64th ( 1 )   285   2003年8月

     詳細

    記述言語:日本語  

  • V族原料による選択成長領域におけるIn/Ga組成分布の変化

    OH H, IM I, 杉山正和, 中野義昭, 霜垣幸浩

    応用物理学会学術講演会講演予稿集   64th ( 1 )   263   2003年8月

     詳細

    記述言語:日本語  

  • 光エレクトロニクス(光信号処理)デバイス

    中野義昭

    応用物理学会学術講演会講演予稿集   64th ( 0 )   12   2003年8月

     詳細

    記述言語:日本語  

  • 多モード干渉カプラ型半導体レーザによる全光フリップ・フロップの提案

    竹中充, 中野義昭

    応用物理学会学術講演会講演予稿集   64th ( 3 )   1081   2003年8月

     詳細

    記述言語:日本語  

  • 選択MOCVDに伴うSiO2マスク上の核発生:成長条件依存性

    OH H, 杉山正和, 中野義昭, 霜垣幸浩

    応用物理学会学術講演会講演予稿集   64th ( 1 )   263   2003年8月

     詳細

    記述言語:日本語  

  • 非相反損失に基づくTEモード半導体導波路型光アイソレータの試作

    清水大雅, 中野義昭

    応用物理学会学術講演会講演予稿集   64th ( 3 )   1060   2003年8月

     詳細

    記述言語:日本語  

  • [招待論文]フォトニックネットワークにおけるデバイス技術の動向 : デジタル光デバイスに向けて(光ルータ,光スイッチング,一般)

    中野 義昭

    電子情報通信学会技術研究報告. PN, フォトニックネットワーク   103 ( 282 )   1 - 1   2003年8月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    フォトニックネットワークを実現するには,従来の光ファイバー通信用デバイスに加えて,新たに光スイッチ,光波長変換器,光合分波器,多波長/波長可変光源,導波路光アンプなどが必要となる.これらの光デバイスは,研究開発の歴史が比較的浅く,現時点ではいずれも未成熟と言わざるを得ない.今後数年の間に,これらデバイスの小型化,低消費電力化,低コスト化を追求し,実装・制御技術を確立して真に実用に耐えるレベルに高めて行く必要がある.一方,全光ネットワークにおける最大の問題は,従来光→電気→光(OEO)変換時に行われていた信号再生が行われなくなることによる信号劣化と雑音の累積である.全光ネットワークの規模が大きくなるにつれこの問題は深刻になる.自律分散的に制御されるネットワークでは,経路を予め知ることができないため,分散補償的に対策することもできない.従って,ノード通過毎に光信号を再生し,経路に依らず信号品質を保つ必要がある.波形整形,ジッター除去などのデジタル信号再生を全光処理で行うためには,光論理ゲートや光フリップフロップなどの「デジタルフォトニックデバイス」が不可欠である.高速な全光デジタル処理は,ビットレート変換,データフォーマット変換などを可能にするほか,将来の全光パケット通信に必須の光信号バッファリング(バッファーメモリ)に繋がるものと期待される.

  • 光バーストスイッチング・ノードにおけるシグナリングと構成(光ルータ,光スイッチング,一般)

    グアルド エリック, 中野 義昭

    電子情報通信学会技術研究報告. PN, フォトニックネットワーク   103 ( 282 )   11 - 16   2003年8月 (   ISSN:0913-5685 )

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    この論文では、新エネルギー・産業技術総合開発機構(NEDO)により推進されている「フォトニック・ネットワーク」プロジェクトにおける光バーストスイッチング・ノードの設計について議論する。このプロジェクトは、光バーストスイッチングを利用した全光ネットワークの早期実現性を示すことを目的とている。このような光ネットワークは小型で低消費電力かつ高い信頼性を持つなどの特徴を有する。ここでは、このような特徴を最大限得られるようなデータ形式やラベル符号化技術、ノード構成に関して議論する。

  • 化合物半導体選択MOCVD成長を利用したマルチスケール解析

    霜垣幸浩, 呉豪振, 林益台, 杉山正和, 中野義昭

    化学工学会秋季大会研究発表講演要旨集   36th   1074 - 927   2003年8月

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    記述言語:日本語   出版者・発行元:公益社団法人 化学工学会  

    DOI: 10.11491/scej.2003f.0.927.0

  • 化合物半導体選択MOCVD成長における表面核発生

    杉山正和, 呉豪振, 林益台, 中野義昭, 霜垣幸浩

    化学工学会秋季大会研究発表講演要旨集   36th   1075 - 928   2003年8月

     詳細

    記述言語:日本語   出版者・発行元:公益社団法人 化学工学会  

    DOI: 10.11491/scej.2003f.0.928.0

  • OFC2003レポート 2003年光ファイバー通信会議(OFC2003)の概要

    中野義昭

    Optronics   ( 258 )   102 - 104   2003年6月 (   ISSN:0286-9659 )

     詳細

    記述言語:日本語  

  • 光アイソレータと一体集積化を目指した半導体レーザ製作に関する基礎検討

    桜井一正, 横井秀樹, 水本哲弥, 宮下大輔, 中野義昭

    映像情報メディア学会技術報告   27 ( 29(BCT2003 1-6) )   13 - 16   2003年5月 (   ISSN:1342-6893 )

     詳細

    記述言語:日本語   出版者・発行元:映像情報メディア学会  

  • 光アイソレータと一体集積化を目指した半導体レーザ製作に関する基礎検討

    櫻井 一正, 横井 秀樹, 水本 哲弥, 宮下 大輔, 中野 義昭

    映像情報メディア学会技術報告   27 ( 29 )   13 - 16   2003年5月 (   ISSN:1342-6893 )

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    記述言語:日本語   出版者・発行元:映像情報メディア学会  

  • 超微細光回路に向けたプラズモンモード金属光導波路

    片桐祥雅, 中野義昭, 小林郁太郎, 光岡靖幸, 篠島弘幸, 福田浩, 後藤東一郎

    レーザー研究   31 ( 4 )   249 - 256   2003年4月 (   ISSN:0387-0200 )

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    記述言語:日本語   出版者・発行元:レ-ザ-学会  

    DOI: 10.2184/lsj.31.249

  • 超微細光回路に向けたプラズモンモード金属光導波路

    片桐 祥雅, 中野 義昭, 小林 郁太郎, 光岡 靖幸, 篠島 弘幸, 福田 浩, 後藤 東一郎

    レーザー研究   31 ( 4 )   249 - 256   2003年4月 (   ISSN:0387-0200 )

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    記述言語:日本語   出版者・発行元:レ-ザ-学会  

    DOI: 10.2184/lsj.31.249

  • Factors determining the generation of polycrystalline growth over masks in selective-area metalorganic vapor phase epitaxy: Gas-phase concentration analysis

    HJ Oh, M Sugiyama, Y Nakano, Y Shimogaki

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   42 ( 4A )   L359 - L361   2003年4月 (   ISSN:0021-4922 )

     詳細

    記述言語:英語   出版者・発行元:INST PURE APPLIED PHYSICS  

    We propose a mechanism for the generation of polycrystals on masks in selective-area metalorganic vapor phase epitaxy. Polycrystals are generated when the gas-phase concentration of a film precursor just above a mask exceeds a critical value. The polycrystals of GaAs were observed at the center of 2-mm-wide SiO2 masks at 100 mbar total pressure, but they disappeared with the reduction of the total pressure to 50 mbar. The observed effect of total pressure and mask width on the generation of polycrystals was consistent with the concentration of a film precursor just above the mask which was estimated by numerically solving the gas-phase diffusion equation.

    DOI: 10.1143/JJAP.42.L359

  • GaAsの選択MOCVDに伴うSiO2マスク上の核発生 気相濃度分布の効果

    OH H, SONG X, 杉山正和, 中野義昭, 霜垣幸浩

    応用物理学関係連合講演会講演予稿集   50th ( 1 )   360   2003年3月

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    記述言語:日本語  

  • MOVPE成長によるInGaP/GaAsヘテロ構造の表面偏析と自然超格子の関係

    福島康之, 中野義昭, 霜垣幸浩

    応用物理学関係連合講演会講演予稿集   50th ( 1 )   358   2003年3月

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    記述言語:日本語  

  • MOVPE成長Al(Ga)N/GaN多重量子井戸における最短波長(1.68μm)サブバンド間遷移の観測

    脇一太郎, KUMTORNKITTIKUL C, 霜垣幸浩, 中野義昭

    応用物理学関係連合講演会講演予稿集   50th ( 1 )   424   2003年3月

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    記述言語:日本語  

  • SOA・位相変調器集積干渉計型全光スイッチのMOVPE選択成長による試作

    宮下大輔, SONG X, ZHANG Z, 二口尚樹, 中野義昭

    応用物理学関係連合講演会講演予稿集   50th ( 3 )   1289   2003年3月

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    記述言語:日本語  

  • ループ形干渉計を用いる非線形屈折率変化測定法の検討

    SEO J‐K, 水本哲弥, 竹中充, 中野義昭

    応用物理学関係連合講演会講演予稿集   50th ( 3 )   1283   2003年3月

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    記述言語:日本語  

  • マルチスケール解析を用いたInP/GaAs系MOCVD表面反応研究

    OH H, IM I, 杉山正和, 中野義昭, 霜垣幸浩

    応用物理学関係連合講演会講演予稿集   50th ( 1 )   359   2003年3月

     詳細

    記述言語:日本語  

  • 光アイソレータとの集積化を目指したファブリペローレーザの製作

    桜井一正, 横井秀樹, 水本哲弥, 宮下大輔, 中野義昭

    応用物理学関係連合講演会講演予稿集   50th ( 3 )   1238   2003年3月

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    記述言語:日本語  

  • 方向性結合双安定半導体レーザに基づく全光フリップ‐フロップの動特性評価

    YIT F C, 竹中充, SONG X L, 中野義昭

    応用物理学関係連合講演会講演予稿集   50th ( 3 )   1284   2003年3月

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    記述言語:日本語  

  • C-3-35 ループ形干渉計を用いる光強度依存屈折率変化測定法の検討

    徐 在國, 水本 哲弥, 竹中 充, 中野 義昭

    電子情報通信学会総合大会講演論文集   2003 ( 1 )   175 - 175   2003年3月

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • C-4-12 光アイソレータ集積化のための半導体レーザ製作

    櫻井 一正, 横井 秀樹, 水本 哲弥, 宮下 大輔, 中野 義昭

    電子情報通信学会総合大会講演論文集   2003 ( 1 )   298 - 298   2003年3月

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • 分子レベルの新機能発現を通じた技術革新 電子・光子等の機能制御 人工光物性に基づく新しい光子制御デバイス

    中野義昭

    戦略的基礎研究推進事業研究年報   2001   324 - 338   2003年3月

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    記述言語:日本語  

  • MOVPE選択成長によるSOA・位相変調器集積干渉計型全光スイッチの試作と評価

    宮下大輔, SONG X, ZHANG Z, 二口尚樹, 中野義昭

    電子情報通信学会技術研究報告   102 ( 581(PS2002 84-98) )   73 - 76   2003年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • MOVPE選択成長によるSOA・位相変調器集積干渉計型全光スイッチの試作と評価

    宮下 大輔, 宋 学良, 張 臻瑞, 二口 尚樹, 中野 義昭

    電子情報通信学会技術研究報告. PS, 光スイッチング   102 ( 581 )   73 - 76   2003年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    MOVPE選択成長法を利用し、SOAをモノリシック集積した、マッハツェンダー干渉計型、およびマイケルソン干渉計型の全光スイッチを作製した。選択成長を用いることにより、成長回数は1度ですみ、作製プロセスも非常に単純であるために、高い歩留まりが得られる。作製した全光スイッチの電流によるスイッチング、および光による全光スイッチングの実験を行った。全光スイッチングでは20dBの消光比が得られた。また消光比を調整するために位相変調器も同時に集積し、その動作も確認した。

  • MOVPE選択成長によるSOA・位相変調器集積干渉計型全光スイッチの試作と評価

    宮下 大輔, 宋 学良, 張 臻瑞, 二口 尚樹, 中野 義昭

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   102 ( 587 )   73 - 76   2003年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • MOVPE選択成長によるSOA・位相変調器集積干渉計型全光スイッチの試作と評価

    宮下 大輔, 宋 学良, 張 〓瑞, 二口 尚樹, 中野 義昭

    電子情報通信学会技術研究報告. OPE, 光エレクトロニクス   102 ( 585 )   73 - 76   2003年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    MOVPE選択成長法を利用し、SOAをモノリシック集積した、マッハツェンダー干渉計型、およびマイケルソン干渉計型の全光スイッチを作製した。選択成長を用いることにより、成長回数は1度ですみ、作製プロセスも非常に単純であるために、高い歩留まりが得られる。作製した全光スイッチの電流によるスイッチング、および光による全光スイッチングの実験を行った。全光スイッチングでは20 dBの消光比が得られた。また消光比を調整するために位相変調器も同時に集積し、その動作も確認した。

  • MOVPE選択成長によるSOA・位相変調器集積干渉計型全光スイッチの試作と評価

    宮下 大輔, 宋 学良, 張 臻端, 二口 尚樹, 中野 義昭

    電子情報通信学会技術研究報告. OFT, 光ファイバ応用技術   102 ( 583 )   73 - 76   2003年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    MOVPE選択成長法を利用し,SOAをモノリシック集積した,マッハツェンダー干渉計型,およびマイケルソン干渉計型の全光スイッチを作製した.選択成長を用いることにより,成長回数は1度ですみ,作製プロセスも非常に単純であるために,高い歩留まりが得られる.作製した全光スイッチの電流によるスイッチング,および光による全光スイッチングの実験を行った.全光スイッチングでは20dBの消光比が得られた.また消光比を調整するために位相変調器も同時に集積し,その動作も確認した.

  • 人工光物性に基づく新しい光子制御デバイス

    中野義昭

    戦略的創造研究推進事業研究年報(CD-ROM)   2003   DENSHI.KOSHITONOKINOSEIGYO,NAKANO   2003年

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    記述言語:日本語  

  • 化合物半導体選択MOCVD成長を利用したマルチスケール解析

    霜垣 幸浩, 呉 豪振, 林 益台, 杉山 正和, 中野 義昭

    化学工学会 研究発表講演要旨集   2003 ( 0 )   927 - 927   2003年

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    記述言語:日本語   出版者・発行元:The Society of Chemical Engineers, Japan  

    DOI: 10.11491/scej.2003f.0.927.0

  • 化合物半導体選択MOCVD成長における表面核発生

    杉山 正和, 呉 豪振, 林 益台, 中野 義昭, 霜垣 幸浩

    化学工学会 研究発表講演要旨集   2003 ( 0 )   928 - 928   2003年

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    記述言語:日本語   出版者・発行元:The Society of Chemical Engineers, Japan  

    DOI: 10.11491/scej.2003f.0.928.0

  • 超微細光回路に向けたプラズモンモード金属光導波路

    片桐 祥雅, 中野 義昭, 小林 郁太郎, 光岡 靖幸, 篠島 弘幸, 福田 浩, 後藤 東一郎

    レーザー研究   31 ( 4 )   249 - 256   2003年 (   ISSN:0387-0200 )

     詳細

    記述言語:日本語   出版者・発行元:The Laser Society of Japan  

    Surface-plasmon polaritons (SPPs) act as extraordinary electromagnetic waves having spatially squeezed field intensity distributions, that couple with oscillation of dense conductive matter and propagate at a metal-dielectric interface. Plasmon-mode metal waveguides are the channels to support their propagation. Characterization based on Maxwell equations gives clear understanding of the plasmon mode in terms of their propagation properties, such as dispersion relations. The method is extended to the analysis of the waveguides with slab structures. Experiments performed with devices having simple metal stripes on dielectric substrates and devices having micro-strip structures to show their promising performance for future ultra-high density photonic integration. An innovative trial of light confinement in a small space, where free-space light waves can never exist, is further described.

    DOI: 10.2184/lsj.31.249

  • 非相反移相効果を利用したTMモード動作光アイソレータにおける反射TEモード抑制

    横井秀樹, 桜井一正, 水本哲弥, 大塚節文, 中野義昭

    電子情報通信学会技術研究報告   102 ( 449(OPE2002 95-105) )   47 - 52   2002年11月 (   ISSN:0913-5685 )

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    記述言語:日本語  

  • 非相反移相効果を利用したTMモード動作光アイソレータにおける反射TEモード抑制

    横井 秀樹, 櫻井 一正, 水本 哲弥, 大塚 節文, 中野 義昭

    電子情報通信学会技術研究報告. OCS, 光通信システム   102 ( 447 )   47 - 52   2002年11月 (   ISSN:0913-5685 )

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    磁気光学導波路内を伝搬するTMモードが感じる非相反移相効果を利用して、導波路形光アイソレータが構成される。この素子は、非相反移相器と相反移相器を含む干渉計を有し、順方向では相反・非相反移相効果が打ち消しあい、逆方向では両移相効果が足し合わされることにより、光アイソレータとして機能する。TMモード動作光アイソレータにおけるTEモード反射光の入力ポートへの結合、及びその抑制について検討した結果を報告する。

  • 非相反移相効果を利用したTMモード動作光アイソレータにおける反射TEモード抑制

    横井 秀樹, 櫻井 一正, 水本 哲弥, 大塚 節文, 中野 義昭

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   102 ( 451 )   47 - 52   2002年11月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    磁気光学導波路内を伝搬するTMモードが感じる非相反移相効果を利用して、導波路形光アイソレータが構成される。この素子は、非相反移相器と相反移相器を含む干渉計を有し、順方向では相反・非相反移相効果が打ち消しあい、逆方向では両移相効果が足し合わされることにより、光アイソレータとして機能する。TMモード動作光アイソレータにおけるTEモード反射光の入力ポートへの結合、及びその抑制について検討した結果を報告する。

  • 非相反移相効果を利用したTMモード動作光アイソレータにおける反射TEモード抑制

    横井 秀樹, 櫻井 一正, 水本 哲弥, 大塚 節文, 中野 義昭

    電子情報通信学会技術研究報告. OPE, 光エレクトロニクス   102 ( 449 )   47 - 52   2002年11月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    磁気光学導波路内を伝搬するTMモードが感じる非相反移相効果を利用して、導波路形光アイソレータが構成される。この素子は、非相反移相器と相反移相器を含む干渉計を有し、順方向では相反・非相反移相効果が打ち消しあい、逆方向では両移相効果が足し合わされることにより、光アイソレータとして機能する。TMモード動作光アイソレータにおけるTEモード反射光の入力ポートへの結合、及びその抑制について検討した結果を報告する。

  • 受動形全光ゲートスイッチを用いた波長変換器

    JEONG S‐H, 水本哲弥, 竹内充, 中野義昭

    電子情報通信学会技術研究報告   102 ( 394(PS2002 49-55) )   29 - 34   2002年10月 (   ISSN:0913-5685 )

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    記述言語:日本語  

  • 受動形全光ゲートスイッチを用いた波長変換器

    鄭 錫煥, 水本 哲弥, 竹中 充, 中野 義昭

    電子情報通信学会技術研究報告. PS, 光スイッチング   102 ( 394 )   29 - 34   2002年10月 (   ISSN:0913-5685 )

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    光ネットワークの信号処理容量の増大や機能性の拡大のために、波長変換器は重要な役割を果たす。ブラッグ反射器装荷形全光ゲートスイッチは受動導波路だけで全光波長変換が可能である。本研究では受動形全光ゲートスイッチを用いた波長変換器において理論解析を行い、動作パワー、変換効率などの動作特性を検討する。試作素子における波長変換動作を示し、変換効率や信号光波長の変換帯域などを議論する。また、素子構造を最適化することにより、偏光無依存波長変換が可能であることを検討する。

  • AlN/GaN超格子による転位密度の低減

    脇一太郎, KUMTORNKITTIKUL C, 霜垣幸浩, 中野義昭

    応用物理学会学術講演会講演予稿集   63rd ( 1 )   315   2002年9月

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    記述言語:日本語  

  • TMモード動作非相反移相形光アイソレータにおける反射TEモードの影響

    横井秀樹, 水本哲弥, 桜井一正, 大塚節文, 中野義昭

    応用物理学会学術講演会講演予稿集   63rd ( 3 )   1023   2002年9月

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    記述言語:日本語  

  • 光誘起超格子無秩序化による1.55μm帯GC‐DFBレーザの発振波長トリミング

    ASAWAMETHAPANT W, 中野義昭

    応用物理学会学術講演会講演予稿集   63rd ( 3 )   996   2002年9月

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    記述言語:日本語  

  • 半導体光アンプ集積デバイスのためのInGaAsP系選択MOVPE成長

    宮下大輔, SONG X, ZHANG Z, AMIN A, 霜垣幸浩, 中野義昭

    応用物理学会学術講演会講演予稿集   63rd ( 3 )   1031   2002年9月

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    記述言語:日本語  

  • 導波層フリースタンディング構造を有する磁気光学導波路の製作

    酒井隆史, 水本哲弥, 横井秀樹, 佐野秀樹, 大塚節文, 中野義昭

    応用物理学会学術講演会講演予稿集   63rd ( 3 )   1046   2002年9月

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    記述言語:日本語  

  • 方向性結合器双安定レーザ構造を有する半導体全光フリップ・フロップの実現

    竹中充, 中野義昭

    応用物理学会学術講演会講演予稿集   63rd ( 3 )   1026   2002年9月

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    記述言語:日本語  

  • 非相反損失を用いたTEモード対応半導体導波路型光アイソレータ

    清水大雅, 田中雅明, 中野義昭

    応用物理学会学術講演会講演予稿集   63rd ( 3 )   1022   2002年9月

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    記述言語:日本語  

  • 非線形ブラッグ反射器を用いる全光波長変換

    JEONG S‐H, 水本哲弥, 竹中充, 中野義昭

    応用物理学会学術講演会講演予稿集   63rd ( 3 )   1017   2002年9月

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    記述言語:日本語  

  • C-3-33 TMモード動作干渉計光アイソレータにおける反射TEモード除去

    横井 秀樹, 水本 哲弥, 桜井 一正, 大塚 節文, 中野 義昭

    電子情報通信学会ソサイエティ大会講演論文集   2002 ( 1 )   133 - 133   2002年8月

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • C-4-25 非線形分布帰還導波路を用いた全光波長変換器の波長依存性の検討

    鄭 錫煥, 水本 哲弥, 竹中 充, 中野 義昭

    電子情報通信学会ソサイエティ大会講演論文集   2002 ( 1 )   267 - 267   2002年8月

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • C-3-76 ナノギャップ伝搬光の特性解析

    後藤 東一郎, 福田 浩, 篠島 弘幸, 片桐 祥雅, 小林 郁太郎, 中野 義昭

    電子情報通信学会ソサイエティ大会講演論文集   2002 ( 1 )   176 - 176   2002年8月

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • C-3-72 磁気光学導波路の非相反移相効果増大のための導波層フリースタンディング構造

    酒井 隆史, 水本 哲弥, 横井 秀樹, 佐野 秀樹, 大塚 節文, 中野 義昭

    電子情報通信学会ソサイエティ大会講演論文集   2002 ( 1 )   172 - 172   2002年8月

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • InGaP/GaAsヘテロ界面におけるIn表面偏析の制御

    福島康之, 中野義昭, 霜垣幸浩

    化学工学会秋季大会研究発表講演要旨集   35th   40   2002年8月

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    記述言語:日本語  

  • ガス交互供給法を用いたIII‐V族化合物半導体のドライエッチング

    瀬上剛, 鈴木達也, 羽路伸夫, 荒川太郎, 多田邦雄, 霜垣幸浩, 中野義昭

    化学工学会秋季大会研究発表講演要旨集   35th   41   2002年8月

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    記述言語:日本語  

  • プラズマプロセスの反応工学的解析 (1)

    時光拓海, 狩野剛, 羽路伸夫, 荒川太郎, 多田邦雄, 中野義昭, 霜垣幸浩

    化学工学会秋季大会研究発表講演要旨集   35th   37   2002年8月

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    記述言語:日本語  

  • 光エレクトロニクス

    中野 義昭

    應用物理   71 ( 6 )   737 - 737   2002年6月 (   ISSN:0369-8009 )

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    記述言語:日本語  

  • 2001年光学会の進展 微細光回路の新展開 高密度光集積回路へ向けた金属光配線技術

    片桐祥雅, 中野義昭, 小林郁太郎, 光岡靖幸

    光学   31 ( 5 )   423 - 428   2002年5月 (   ISSN:0389-6625 )

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    記述言語:日本語   出版者・発行元:応用物理学会分科会日本光学会  

  • C4F8プラズマプロセスの反応工学的解析

    時光拓海, 狩野剛, 羽路伸夫, 荒川太郎, 多田邦雄, 中野義昭, 霜垣幸浩

    応用物理学関係連合講演会講演予稿集   49th ( 1 )   501   2002年3月

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    記述言語:日本語  

  • C4F8プラズマプロセスの反応工学的解析

    時光拓海, 狩野剛, 羽路伸夫, 荒川太郎, 多田邦雄, 中野義昭, 霜垣幸浩

    応用物理学関係連合講演会講演予稿集   49th ( 2 )   941   2002年3月

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    記述言語:日本語  

  • FDTD法による全反射型導波路ミラーの解析とその試作

    SONG X, 宮下大輔, 中野義昭

    応用物理学関係連合講演会講演予稿集   49th ( 3 )   1181   2002年3月

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    記述言語:日本語  

  • InAlAs,AlGaAsのメタン・水素/酸素交互供給ECR反応性イオンエッチング

    瀬上剛, 鈴木達也, 羽路伸夫, 荒川太郎, 多田邦雄, 霜垣幸浩, 中野義昭

    応用物理学関係連合講演会講演予稿集   49th ( 3 )   1408   2002年3月

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    記述言語:日本語  

  • InGaAsP系選択MOVPE成長の解析

    OH H, 二口尚樹, 中野義昭, 霜垣幸浩

    応用物理学関係連合講演会講演予稿集   49th ( 1 )   441   2002年3月

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    記述言語:日本語  

  • MQW‐EA変調器における光誘起屈折率変化の偏光依存性を用いた波長変換 (II)

    加藤正樹, 金子慎, KUMTORNKITTIKUL, 中野義昭

    応用物理学関係連合講演会講演予稿集   49th ( 3 )   1190   2002年3月

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    記述言語:日本語  

  • MOVPE成長によるGaAs/InGaPヘテロ界面形成時のIII族原子分布制御

    福島康之, 中野義昭, 霜垣幸浩

    応用物理学関係連合講演会講演予稿集   49th ( 1 )   338   2002年3月

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    記述言語:日本語  

  • マストランスポートInAsP量子細線DFBレーザの室温連続発振

    大塚節文, 中野義昭

    応用物理学関係連合講演会講演予稿集   49th ( 3 )   1145   2002年3月

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    記述言語:日本語  

  • 半導体レーザの温度特性を低減するヒートシンク構造 (II) 実装法の改善

    井上大介, 中野義昭

    応用物理学関係連合講演会講演予稿集   49th ( 3 )   1139   2002年3月

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    記述言語:日本語  

  • 方向性結合器双安定レーザ・ダイオードを用いた全光フリップ・フロップの提案

    竹中充, 中野義昭

    応用物理学関係連合講演会講演予稿集   49th ( 3 )   1188   2002年3月

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    記述言語:日本語  

  • DFB導波路形偏光無依存全光スイッチ

    JEONG S‐H, KIM H‐C, 水本哲弥, WIEDMANN J, 荒井滋久, 竹中充, 中野義昭

    電子情報通信学会大会講演論文集   2002   449 - 450   2002年3月 (   ISSN:1349-1369 )

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    記述言語:日本語  

  • 全光波長変換デバイスの検討

    JEONG S‐H, 水本哲弥, 竹中充, 中野義昭

    電子情報通信学会大会講演論文集   2002   651   2002年3月 (   ISSN:1349-1369 )

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    記述言語:日本語  

  • 選択酸化による磁気光学導波路の非相反移相効果の増大

    横井秀樹, 水本哲弥, 黒田晋平, 酒井隆史, 大塚節文, 中野義昭

    電子情報通信学会大会講演論文集   2002   248   2002年3月 (   ISSN:1349-1369 )

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    記述言語:日本語  

  • 精密微小反射測定法による金属光導波路の伝搬特性評価

    YIT F C, 梶原優介, 福田浩, 片桐祥雅, 光岡靖幸, 小林郁太郎, 中野義昭

    電子情報通信学会大会講演論文集   2002   251   2002年3月 (   ISSN:1349-1369 )

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    記述言語:日本語  

  • CVD薄膜生成コンピュータシミュレーションにおける熱拡散効果

    神保えみ, 菅原活郎, 高井朋規, 杉山正和, 霜垣幸浩, 中野義昭, 小宮山宏, 江頭靖幸

    化学工学会年会研究発表講演要旨集   67th   474   2002年3月

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    記述言語:日本語  

  • 人工光物性に基づく新しい光子制御デバイス

    中野義昭

    戦略的基礎研究推進事業研究年報   2000   495 - 504   2002年3月

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    記述言語:日本語  

  • DFB導波路全光スイッチの偏光無依存動作特性

    JEONG S‐H, KIM H‐C, 水本哲弥, WIEDMANN J, 荒井滋久, 竹中充, 中野義昭

    電子情報通信学会技術研究報告   101 ( 583(PS2001 78-94) )   55 - 60   2002年1月 (   ISSN:0913-5685 )

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    データ通信需要の爆発的な増大に対処するために高速に動作する全光スイッチの実現が求められている。非線形分布帰還導波路を用いる全光スイッチは素子構造を最適化することにより、導波路そのものの偏光依存性を解消することができる。本研究では、垂直回折格子を有するハイメサ導波路構造を用いることにより、全光スイッチの構造的な偏光無依存性を解消し、入射光の偏光状態に依存しないスイッチング動作を実験的に実証したので報告する。

  • DFB導波路全光スイッチの偏光無依存動作特性

    鄭 錫煥, 金 孝昶, 水本 哲弥, ヨルク ウィドマン, 荒井 滋久, 竹中 充, 中野 義昭

    電子情報通信学会技術研究報告. OPE, 光エレクトロニクス   101 ( 589 )   55 - 60   2002年1月 (   ISSN:0913-5685 )

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    データ通信需要の爆発的な増大に対処するために高速に動作する全光スイッチの実現が求められている。非線形分布帰還導波路を用いる全光スイッチは素子構造を最適化することにより、導波路そのものの偏光依存性を解消することができる。本研究では、垂直回折格子を有するハイメサ導波路構造を用いることにより、全光スイッチの構造的な偏光無依存性を解消し、入射光の偏光状態に依存しないスイッチング動作を実験的に実証したので報告する。

  • DFB導波路全光スイッチの偏光無依存動作特性

    鄭 錫煥, 金 孝昶, 水本 哲弥, ヨルク ウィドマン, 荒井 滋久, 竹中 充, 中野 義昭

    電子情報通信学会技術研究報告. OFT, 光ファイバ応用技術   101 ( 586 )   55 - 60   2002年1月 (   ISSN:0913-5685 )

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    データ通信需要の爆発的な増大に対処するために高速に動作する全光スイッチの実現が求められている。非線形分布帰還導波路を用いる全光スイッチは素子構造を最適化することにより、導波路そのものの偏光依存性を解消することができる。本研究では、垂直回折格子を有するハイメサ導波路構造を用いることにより、全光スイッチの構造的な偏光無依存性を解消し、入射光の偏光状態に依存しないスイッチング動作を実験的に実証したので報告する。

  • DFB導波路全光スイッチの偏光無依存動作特性

    鄭 錫煥, 金 孝昶, 水本 哲弥, ヨルク ウィドマン, 荒井 滋久, 竹中 充, 中野 義昭

    電子情報通信学会技術研究報告. PS, 光スイッチング   101 ( 583 )   55 - 60   2002年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    データ通信需要の爆発的な増大に対処するために高速に動作する全光スイッチの実現が求められている。非線形分布帰還導波路を用いる全光スイッチは素子構造を最適化することにより、導波路そのものの偏光依存性を解消することができる。本研究では、垂直回折格子を有するハイメサ導波路構造を用いることにより、全光スイッチの構造的な偏光無依存性を解消し、入射光の偏光状態に依存しないスイッチング動作を実験的に実証したので報告する。

  • DFB導波路全光スイッチの偏光無依存動作特性

    鄭 錫煥, 金 孝昶, 水本 哲弥, ヨルク ウィドマン, 荒井 滋久, 竹中 充, 中野 義昭

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   101 ( 592 )   55 - 60   2002年1月 (   ISSN:0913-5685 )

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    データ通信需要の爆発的な増大に対処するために高速に動作する全光スイッチの実現が求められている。非線形分布帰還導波路を用いる全光スイッチは素子構造を最適化することにより、導波路そのものの偏光依存性を解消することができる。本研究では、垂直回折格子を有するハイメサ導波路構造を用いることにより、全光スイッチの構造的な偏光無依存性を解消し、入射光の偏光状態に依存しないスイッチング動作を実験的に実証したので報告する。

  • 時間ジャンパを用いた可変多重分離時分割光交換方式の双方向通話路構成法

    安井直彦, 上村有朋, 中野義昭

    電子情報通信学会論文誌 B   J85-B ( 1 )   31 - 42   2002年1月 (   ISSN:1344-4697 )

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    本論文においては, 既に提案している時間ジャンパを用いた可変多重分離時分割光交換方式(JVTDS:Jumpered Variable Mux/Demux Time Division Photonic Switching System)の通話路の1面構成による双方向トラヒックの収容, 4線化の問題, 対制御について考察する.1面構成JVTDSは対制御構成を実現することは一般的には不可能であるが, JVTDSの高速ハイウエー部で折り返して展開段と混合段が一致する通話路構成を前提とすれば, JVTDS1面構成通話路における対制御構成を可能とする通話路形式の条件は, 展開段(=混合段)の各段の空間分割表示されたスイッチサイズがその中央段に関して対象であること, 展開段(=混合段)が奇数段であることがスイッチ構成上必要である.これに基づき光ジャンパ構成法を求め, その場合のジャンパ種類, 及びジャンパコストを含めたアーラン当りコストから見た最適通話路構成を端子数2^<10>2^<15>の場合について考察した.

  • 時間ジャンパを用いた可変多重分離時分割光交換方式の双方向通話路構成法

    安井 直彦, 上村 有朋, 中野 義昭

    電子情報通信学会論文誌. B, 通信   85 ( 1 )   31 - 42   2002年1月 (   ISSN:1344-4697 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    本論文においては, 既に提案している時間ジャンパを用いた可変多重分離時分割光交換方式(JVTDS:Jumpered Variable Mux/Demux Time Division Photonic Switching System)の通話路の1面構成による双方向トラヒックの収容, 4線化の問題, 対制御について考察する.1面構成JVTDSは対制御構成を実現することは一般的には不可能であるが, JVTDSの高速ハイウエー部で折り返して展開段と混合段が一致する通話路構成を前提とすれば, JVTDS1面構成通話路における対制御構成を可能とする通話路形式の条件は, 展開段(=混合段)の各段の空間分割表示されたスイッチサイズがその中央段に関して対象であること, 展開段(=混合段)が奇数段であることがスイッチ構成上必要である.これに基づき光ジャンパ構成法を求め, その場合のジャンパ種類, 及びジャンパコストを含めたアーラン当りコストから見た最適通話路構成を端子数2^&lt;10&gt;2^&lt;15&gt;の場合について考察した.

  • DFB導波路を用いた全光スイッチの偏光無依存化

    JEONG S‐H, KIM H‐C, 水本哲弥, WIEDMANN J, 荒井滋久, 竹中充, 中野義昭

    電子情報通信学会技術研究報告   101 ( 510(PS2001 36-64) )   163 - 168   2001年12月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    OE/EO変換を用いない全光スイッチは超高速光信号処理を行うために必要不可欠である。非線形分布帰還導波路は素子構造を適当に選ぶことにより、導波路の偏光依存性を解消することができる。本研究では、垂直回折格子を有するハイメサ導波路構造を用いることにより、全光スイッチの偏光無依存化が加納になることについて検討し、理論的な検討に基づいて試作した素子において実験を行ったので報告する。

  • MQW‐EA変調器における光誘起屈折率変化を利用した全光デバイスの特性

    加藤正樹, 中野義昭

    電子情報通信学会技術研究報告   101 ( 510(PS2001 36-64) )   157 - 162   2001年12月 (   ISSN:0913-5685 )

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    MQW-EA変調器における光誘起屈折率変化の偏光依存性を用いた非常に簡便な方法により、0.8%圧縮歪InGaAsP量子井戸を吸収層として用いたMQW-EA変調器で波長変換実験を行い、+6dBmの比較的小さなシグナル光パワーで動作することを実験的に確かめた。

  • DFB導波路を用いた全光スイッチの偏光無依存化

    鄭 錫煥, 金 孝昶, 水本 哲弥, ウィドマン ヨルク, 荒井 滋久, 竹中 充, 中野 義昭

    電子情報通信学会技術研究報告. NS, ネットワークシステム   101 ( 508 )   163 - 168   2001年12月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    OE/EO変換を用いない全光スイッチは超高速光信号処理を行うために必要不可欠である。非線形分布帰還導波路は素子構造を適当に選ぶことにより、導波路の偏光依存性を解消することができる。本研究では、垂直回折格子を有するハイメサ導波路構造を用いることにより、全光スイッチの偏光無依存化が加納になることについて検討し、理論的な検討に基づいて試作した素子において実験を行ったので報告する。

  • DFB導波路を用いた全光スイッチの偏光無依存化

    鄭 錫煥, 金 孝昶, 水本 哲弥, ウィドマン ヨルク, 荒井 滋久, 竹中 充, 中野 義昭

    電子情報通信学会技術研究報告. PS, 光スイッチング   101 ( 510 )   163 - 168   2001年12月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    OE/EO変換を用いない全光スイッチは超高速光信号処理を行うために必要不可欠である。非線形分布帰還導波路は素子構造を適当に選ぶことにより、導波路の偏光依存性を解消することができる。本研究では、垂直回折格子を有するハイメサ導波路構造を用いることにより、全光スイッチの偏光無依存化が可能になることについて検討し、理論的な検討に基づいて試作した素子において実験を行ったので報告する。

  • MQW-EA変調器における光誘起屈折率変化を利用した全光デバイスの特性

    加藤 正樹, 中野 義昭

    電子情報通信学会技術研究報告. NS, ネットワークシステム   101 ( 508 )   157 - 162   2001年12月 (   ISSN:0913-5685 )

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    MQW-EA変調器における光誘起屈折率変化の偏光依存性を用いた非常に簡便な方法により、0.8%圧縮歪InGaAsP量子井戸を吸収層として用いたMQW-EA変調器で波長変換実験を行い、+6dBmの比較的小さなシグナル光パワーで動作することを実験的に確かめた。

  • MQW-EA変調器における光誘起屈折率変化を利用した全光デバイスの特性

    加藤 正樹, 中野 義昭

    電子情報通信学会技術研究報告. PS, 光スイッチング   101 ( 510 )   157 - 162   2001年12月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    MQW-EA変調器における光誘起屈折率変化の偏光依存性を用いた非常に簡便な方法により、0.8%圧縮歪InGaAsP量子井戸を吸収層として用いたMQW-EA変調器で波長変換実験を行い、+6dBmの比較的小さなシグナル光パワーで動作することを実験的に確かめた。

  • All-Optical Wavelength Conversion Using a Fabry-Perot Semiconductor Optical Amplifier

    SAITOH Masumi, TAKENAKA Mitsuru, MA Byongjin, NAKANO Yoshiaki

    IEICE transactions on electronics   84 ( 12 )   1975 - 1978   2001年12月 (   ISSN:0916-8524 )

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    We describe a simple all-optical wavelength converter based on a Fabry-Perot semiconductor optical amplifier(FPSOA). We measure its static characteristics in detail and successfully demonstrate its dynamic wavelength-conversion operation(both inverted and non-inverted) at 2.5 Gbit/s. This is the first demonstration of FPSOA-based wavelength conversion. Quasi-digital response is also observed. Low input power, ease of fabrication and good compatibility with WDM networks are important advantages of FPSOA.

  • 非相反放射モード変換を利用した磁性ガーネット/半導体磁気光学導波路を有する光アイソレータ

    横井秀樹, 水本哲弥, 桜井一正, 酒井隆史, 大塚節文, 中野義昭

    電子情報通信学会技術研究報告   101 ( 450(OPE2001 88-103) )   23 - 28   2001年11月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語  

  • PECVDによる低誘電率層間絶縁膜用a‐C:F膜の合成

    羽路伸夫, 霜垣幸浩, 中野義昭

    電子情報通信学会技術研究報告   101 ( 430(SDM2001 174-182) )   19 - 24   2001年11月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    ULSI層間絶縁膜の低誘電率化を目的として, C_2F_4を原料ガスとしたプラズマCVD法によりa-C:F膜の合成を行い, 製膜条件が膜構造および誘電率に与える影響を評価した。また, 製膜速度の滞留時間依存性の解析から, 本反応系ではプラズマ中での反応によりイオン, ラジカル類が生成する過程が律速であること, また, ステップカバレッジの解析からイオン種の付着確率は1.0程度, ラジカル類の付着確率は0.01程度であることが分かった。また, イオン種による製膜は耐熱性の高い構造を形成することも明らかになった。

  • 非相反放射モード変換を利用した磁性ガーネット/半導体磁気光学導波路を有する光アイソレータ

    横井 秀樹, 水本 哲弥, 桜井 一正, 酒井 隆史, 大塚 節文, 中野 義昭

    電子情報通信学会技術研究報告. OPE, 光エレクトロニクス   101 ( 450 )   23 - 28   2001年11月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    二枚の基板を接着剤を用いずに貼り合わせるダイレクトボンディング技術を用いることにより、半導体を導波層とする集積形光アイソレータが製作可能となる。非相反な導波モード-放射モード変換を利用した、半導体導波層を有する光アイソレータについて報告する。光アイソレータは、磁性ガーネット/GalnAsP/InP(及びAllnAs-oxide)構造の磁気光学導波路を有する。光アイソレーダが動作するための磁気光学導波路の導波路パラメータについて検討した結果について述べる。

  • 非相反放射モード変換を利用した磁性ガーネット/半導体磁気光学導波路を有する光アイソレータ

    横井 秀樹, 水本 哲弥, 桜井 一正, 酒井 隆史, 大塚 節文, 中野 義昭

    電子情報通信学会技術研究報告. OCS, 光通信システム   101 ( 448 )   23 - 28   2001年11月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    二枚の基板を接着剤を用いずに貼り合わせるダイレクトボンディング技術を用いることにより、半導体を導波層とする集積形光アイソレータが製作可能となる。非相反な導波モード-放射モード変換を利用した、半導体導波層を有する光アイソレータについて報告する。光アイソレータは、磁性ガーネット/GaInAsP/InP(及びAlInAs-oxide)講造の磁気光学導波路を有する。光アイソレータが動作するための磁気光学導波路の導波路パラメータについて検討した結果について述べる。

  • 非相反放射モード変換を利用した磁性ガーネット/半導体磁気光学導波路を有する光アイソレータ

    横井 秀樹, 水本 哲弥, 桜井 一正, 酒井 隆史, 大塚 節文, 中野 義昭

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   101 ( 452 )   23 - 28   2001年11月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    二枚の基板を接着剤を用いずに貼り合わせるダイレクトボンディング技術を用いることにより、半導体を導波層とする集積型光アイソレータが制作可能となる。非相反な導波モード-放射モード変換を利用した、半導体導波層を有する光アイソレータについて報告する。光アイソレータは、磁性ガーネット/GalnAsP/lnP(及びAllnAs-oxide)構造の磁気光学導波路を有する。光アイソレータが動作するための磁気光学導波路の導波路パラメータについて検討した結果について述べる。

  • PECVDによる低誘電率層間絶縁膜用a-C:F膜の合成(<特集> : 低誘電率層間膜及び配線技術)

    羽路 伸夫, 霜垣 幸浩, 中野 義昭

    電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス   101 ( 430 )   19 - 24   2001年11月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    ULSI層間絶縁膜の低誘電率化を目的として, C_2F_4を原料ガスとしたプラズマCVD法によりa-C:F膜の合成を行い, 製膜条件が膜構造および誘電率に与える影響を評価した。また, 製膜速度の滞留時間依存性の解析から, 本反応系ではプラズマ中での反応によりイオン, ラジカル類が生成する過程が律速であること, また, ステップカバレッジの解析からイオン種の付着確率は1.0程度, ラジカル類の付着確率は0.01程度であることが分かった。また, イオン種による製膜は耐熱性の高い構造を形成することも明らかになった。

  • MQW‐EA変調器における光誘起屈折率変化の偏光依存性を用いた波長変換

    加藤正樹, 中野義昭

    応用物理学会学術講演会講演予稿集   62nd ( 3 )   912   2001年9月

     詳細

    記述言語:日本語  

  • ハイメサDFB導波路形全光スイッチにおけるグレーティング結合係数の増大

    JEONG S.‐H, 水本哲弥, 中津原克己, 竹中充, 中野義昭

    応用物理学会学術講演会講演予稿集   62nd ( 3 )   910   2001年9月

     詳細

    記述言語:日本語  

  • マストランスポートInAsP量子細線における光学特性のプロセスパラメータ依存性

    大塚節文, 中野義昭

    応用物理学会学術講演会講演予稿集   62nd ( 3 )   866   2001年9月

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    記述言語:日本語  

  • 低損失金属光導波線路と応用

    片桐祥雅, 篠島弘幸, 福田浩, 後藤東一郎, 中野義昭, 小林郁太郎

    応用物理学会学術講演会講演予稿集   62nd ( 3 )   898   2001年9月

     詳細

    記述言語:日本語  

  • 光集積回路に向けた金属光配線の提案と損失測定

    YIT F. C, 竹中充, 片桐祥雅, 光岡靖幸, 小林郁太郎, 中野義昭

    応用物理学会学術講演会講演予稿集   62nd ( 3 )   897   2001年9月

     詳細

    記述言語:日本語  

  • 半導体導波層を有する非相反モード変換形光アイソレータ

    横井秀樹, 水本哲弥, 桜井一正, 酒井隆史, 大塚節文, 中野義昭

    応用物理学会学術講演会講演予稿集   62nd ( 3 )   917   2001年9月

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    記述言語:日本語  

  • 半導体レーザの温度依存性を低減するヒートシンク構造

    井上大介, 中野義昭, 鯉渕興二

    応用物理学会学術講演会講演予稿集   62nd ( 3 )   862   2001年9月

     詳細

    記述言語:日本語  

  • 斜め蒸着による方向性結合器型半導体光増幅器の電極分離

    竹中充, 中野義昭

    応用物理学会学術講演会講演予稿集   62nd ( 3 )   912   2001年9月

     詳細

    記述言語:日本語  

  • C-4-5 偏波無依存全光スイッチングのためのハイメサDFB導波路の検討

    鄭 錫煥, 水本 哲弥, 中津原 克己, 竹中 充, 中野 義昭

    電子情報通信学会ソサイエティ大会講演論文集   2001 ( 1 )   243 - 243   2001年8月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • C-3-77 光集積回路の光配線に適する金属/誘電体導波路の試作と損失測定

    イット フーチョン, 竹中 充, 片桐 祥雅, 光岡 靖幸, 小林 郁太郎, 中野 義昭

    電子情報通信学会ソサイエティ大会講演論文集   2001 ( 1 )   187 - 187   2001年8月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • C-3-79 ダイレクトボンディングにより製作される非相反放射モード変換形光アイソレータ

    横井 秀樹, 水本 哲弥, 桜井 一正, 酒井 隆史, 大塚 節文, 中野 義昭

    電子情報通信学会ソサイエティ大会講演論文集   2001 ( 1 )   189 - 189   2001年8月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • MOVPEによるGaAs/InGaPヘテロ界面形成での分光エリプソメトリーのその場観察

    中野貴之, 福島康之, 中野義昭, 霜垣幸浩

    化学工学会関東支部大会研究発表講演要旨集   2001   B207   2001年8月

     詳細

    記述言語:日本語  

  • 偏波無依存全光スイッチングのための非線形GaInAsP DFB導波路の検討

    JEONG S‐H, 水本哲弥, 中津原克己, 竹中充, 中野義昭

    電子情報通信学会技術研究報告   101 ( 220(OCS2001 38-44) )   7 - 12   2001年7月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語  

  • 偏波無依存全光スイッチングのための非線形GalnAsP DFB導波路の検討

    鄭 錫煥, 水本 哲弥, 中津原 克己, 竹中 充, 中野 義昭

    電子情報通信学会技術研究報告. OFT, 光ファイバ応用技術   101 ( 224 )   7 - 12   2001年7月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    高速かつ大容量に光信号処理を行うために, 電子回路による速度制限を受けない全光スイッチの実現が望まれている。ハイメサ導波路構造を用いる非線形DFB導波路は素子構造を最適化することにより、導波路自体の強い偏光依存性を解消することができる。本研究では、ハイメサDFB導波路において理論解析を用い、偏光無依存化が可能であることを検討し、試作素子において、素子構造を工夫することにより偏光依存性が著しく低減できることを示す。また、偏光無依存化かつ動作パワーの低減および素子の小型化のための素子構造について検討する。

  • 偏波無依存全光スイッチングのための非線形GaInAsP DFB導波路の検討

    鄭 錫煥, 水本 哲弥, 中津原 克己, 竹中 充, 中野 義昭

    電子情報通信学会技術研究報告. PS, 光スイッチング   101 ( 222 )   7 - 12   2001年7月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    高速かつ大容量に光信号処理を行うために, 電子回路による速度制限を受けない全光スイッチの実現が望まれている。ハイメサ導波路構造を用いる非線形DFB導波路は素子構造を最適化することにより、導波路自体の強い偏光依存性を解消することができる。本研究では、ハイメサDFB導波路において理論解析を用い、偏光無依存化が可能であることを検討し、試作素子において、素子構造を工夫することにより偏光依存性が著しく低減できることを示す。また、偏光無依存化かつ動作パワーの低減および素子の小型化のための素子構造について検討する。

  • 偏波無依存全光スイッチングのための非線形GalnAsP DFB導波路の検討

    鄭 錫煥, 水本 哲弥, 中津原 克己, 竹中 充, 中野 義昭

    電子情報通信学会技術研究報告. OCS, 光通信システム   101 ( 220 )   7 - 12   2001年7月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    高速かつ大容量に光信号処理を行うために, 電子回路による速度制限を受けない全光スイッチの実現が望まれている。ハイメサ導波路構造を用いる非線形DFB導波路は素子構造を最適化することにより、導波路自体の強い偏光依存性を解消することができる。本研究では、ハイメサDFB導波路において理論解析を用い、偏光無依存化が可能であることを検討し、試作素子において、素子構造を工夫することにより偏光依存性が著しく低減できることを示す。また、偏光無依存化かつ動作パワーの低減および素子の小型化のための素子構造について検討する。

  • モノリシック光集積回路に向けたMOVPE選択成長技術とその全光スイッチ回路への応用

    二口尚樹, SONG X, 宮下大輔, 加藤正樹, 中野義昭

    電子情報通信学会技術研究報告   101 ( 92(OPE2001 1-11) )   31 - 36   2001年5月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    有機金属気相エピタキシャル成長法を用いた選択成長技術は、光集積回路の作製プロセスをより容易にする技術として注目されている。我々は、InP系光デバイスでよく用いられる基本的な組成(InP, InGaAs, InGaAsP)を選択成長し、その成長速度の測定結果から組成を推定する方法を考案した。また、選択成長法を用いた光集積回路へのひとつの応用として、半導体光増幅器(SOA)とマッハ・ツェンダ干渉計(MZI)を用いた全光スイッチを、1回の結晶成長ステップで試作し、基本的な全光スイッチング動作に成功した。

  • モノリシック光集積回路に向けたMOVPE選択成長技術とその全光スイッチ回路への応用

    二口 尚樹, 宋 学良, 宮下 大輔, 加藤 正樹, 中野 義昭

    電子情報通信学会技術研究報告. OPE, 光エレクトロニクス   101 ( 92 )   31 - 36   2001年5月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    有機金属気相エピタキシャル成長法を用いた選択成長技術は、光集積回路の作製プロセスをより容易にする技術として注目されている。我々は、InP系光デバイスでよく用いられる基本的な組成(InP, InGaAs, InGaAsP)を選択成長し、その成長速度の測定結果から組成を推定する方法を考案した。また、選択成長法を用いた光集積回路へのひとつの応用として、半導体光増幅器(SOA)とマッハ・ツェンダ干渉計(MZI)を用いた全光スイッチを、1回の結晶成長ステップで試作し、基本的な全光スイッチング動作に成功した。

  • Integration of terraced laser diode and garnet crystals by wafer direct bonding

    Hideki Yokoi, Takashi Waniishi, Tetsuya Mizumoto, Masafumi Shimizu, Kazumasa Sakurai, Naoki Futakuchi, Yoshiaki Nakano

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   40   3463 - 3467   2001年5月 (   ISSN:0021-4922 )

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    Integration of a semiconductor laser diode and an optical isolator was studied using the wafer direct bonding technique. A terraced laser diode was fabricated by reactive ion etching using CH4/H2/O2 gas. A smooth and vertical mirror facet was obtained by adjusting the flow rate of the etchant gas. Room-temperature pulsed laser operation was achieved in the laser diode with one cleaved facet and the second facet formed by reactive ion etching. The terraced laser diode was integrated with garnet crystals by wafer direct bonding. Room-temperature pulsed laser operation was confirmed after the bonding process.

    DOI: 10.1143/JJAP.40.3463

  • MOVPE選択成長によるSOA集積マッハ・ツェンダ干渉計型全光スイッチ

    二口尚樹, 宮下大輔, 加藤正樹, 中野義昭, SONG X

    電子情報通信学会技術研究報告   101 ( 34(PS2001 1-8) )   39 - 44   2001年4月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    近年の超高速光ファイバ通信システムでは、さまざまな光コンポーネントが必要とされるが、中でも超高速動作可能な全光スイッチは重要である。我々は1回のみの有機金属気相エピタキシャル選択成長を用いて、マッハ・ツェンダー干渉計と半導体光アンプ(SOA)をモノリシックに集積化し、2種類のパターニング・エッチングプロセスを用いることによって、InGaAsP/InP系の全光スイッチを試作した。制御光は用いずに、選択成長された多重量子井戸のSOAに電流を注入する予備的な実験では、電流注入に伴う大きな屈折率変化が得られた。さらに制御光を用いた全光スイッチング動作にも成功した。

  • MOVPE選択成長によるSOA集積マッハ・ツェンダ干渉計型全光スイッチ

    二口 尚樹, 宋 学良, 宮下 大輔, 加藤 正樹, 中野 義昭

    電子情報通信学会技術研究報告. PS, 光スイッチング   101 ( 34 )   39 - 44   2001年4月 (   ISSN:0913-5685 )

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    近年の超高速光ファイバ通信システムでは、さまざまな光コンポーネントが必要とされるが、中でも超高速動作可能な全光スイッチは重要である。我々は1回のみの有機金属気相エピタキシャル選択成長を用いて、マッハ・ツェンダー干渉計と半導体光アンプ(SOA)をモノリシックに集積化し、2種類のパターニング・エッチングプロセスを用いることによって、InGaAsP/InP系の全光スイッチを試作した。制御光は用いずに、選択成長された多重量子井戸のSOAに電流を注入する予備的な実験では、電流注入に伴う大きな屈折率変化が得られた。さらに制御光を用いた全光スイッチング動作にも成功した。

  • 2000年光学界の進展計算機/光造形 マクロからミクロまで 2000年光学界の進展

    吉森久, 伊藤孝之, 渡辺紀生, 盛永篤郎, 中野義昭, 宮崎健創, 原口雅宣, 波多野洋, 有本昭

    光学   30 ( 4 )   222 - 247   2001年4月 (   ISSN:0389-6625 )

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    記述言語:日本語   出版者・発行元:応用物理学会分科会日本光学会  

  • レーザー

    中野 義昭, 宮崎 健創

    光学   30 ( 4 )   227 - 229   2001年4月 (   ISSN:0389-6625 )

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    記述言語:日本語   出版者・発行元:応用物理学会分科会日本光学会  

    DOI: 10.1097/00041444-200112000-00009

  • InGaAs/InP MQW‐EA変調器における光誘起位相シフトの解析

    加藤正樹, 中野義昭

    応用物理学関係連合講演会講演予稿集   48th ( 3 )   1163   2001年3月

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    記述言語:日本語  

  • MOVPEにおけるGaAs/InGaPヘテロ界面形成の動的エリプソメトリ法によるその場観察(3)

    中野貴之, 中野義昭, 霜垣幸浩

    応用物理学関係連合講演会講演予稿集   48th ( 1 )   351   2001年3月

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    記述言語:日本語  

  • バルクInGaAsP/InPを用いたマッハツェンダー光スイッチの低電圧動作

    並木亮介, 加藤正樹, 中野義昭

    応用物理学関係連合講演会講演予稿集   48th ( 3 )   1166   2001年3月

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    記述言語:日本語  

  • 光アイソレータ集積形半導体レーザのためのレーザ反射鏡の形成

    櫻井一正, 横井秀樹, 水本哲弥, 二口尚樹, 中野義昭

    応用物理学関係連合講演会講演予稿集   48th ( 3 )   1378   2001年3月

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    記述言語:日本語  

  • 非対称結合AlGaAs/GaAs多重量子井戸フォトリフラクティブ素子

    池田博一, 辻倉伸弥, 平塚哉, 山本正美, 岡本恭典, 加藤正樹, 中野義昭

    応用物理学関係連合講演会講演予稿集   48th ( 3 )   1165   2001年3月

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    記述言語:日本語  

  • B-12-9 グリーティング装荷非線形方向性結合器を用いた 1×2 全光スイッチング

    中津原 克己, 白土 隆史, 鄭 錫煥, 水本 哲弥, 竹中 充, 中野 義昭

    電子情報通信学会総合大会講演論文集   2001 ( 2 )   627 - 627   2001年3月

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • InGaAs/InAlAs MQW‐EA変調器を用いた全光デバイスの波長依存性の解析

    加藤正樹, 中野義昭

    電子情報通信学会大会講演論文集   2001   346   2001年3月 (   ISSN:1349-1369 )

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    記述言語:日本語  

  • グレーティング装荷非線形方向性結合器の動作特性

    白土隆史, 中津原克己, JEONG S‐H, 水本哲弥, 竹中充, 中野義昭

    電子情報通信学会大会講演論文集   2001   287   2001年3月 (   ISSN:1349-1369 )

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    記述言語:日本語  

  • 偏光無依存全光スイッチング素子の検討

    JEONG S H, 水本哲弥, 中津原克己, 竹中充, 中野義昭

    電子情報通信学会大会講演論文集   2001   179   2001年3月 (   ISSN:1349-1369 )

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    記述言語:日本語  

  • 選択成長GaInAsP/InPウェハへのFIBエッチングによるレーザ反射鏡の形成

    桜井一正, 横井秀樹, 水本哲弥, 二口尚樹, 中野義昭

    電子情報通信学会大会講演論文集   2001   263   2001年3月 (   ISSN:1349-1369 )

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    記述言語:日本語  

  • 半導体光波長変換デバイスの研究動向

    中野 義昭

    レーザー学会学術講演会年次大会講演予稿集 = Annual meeting, of the Laser Society of Japan digest of technical papers   21   190 - 191   2001年1月 (   ISSN:0913-6355 )

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    記述言語:日本語  

  • 半導体光波長変換デバイスの研究動向

    中野 義昭

    レーザー研究   29 ( 0 )   190 - 191   2001年 (   ISSN:0387-0200   eISSN:1349-6603 )

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    出版者・発行元:The Laser Society of Japan  

    DOI: 10.2184/lsj.29.Supplement_190

  • Optical isolator using a nonreciprocal phase shift with a semiconductor guiding layer

    Tetsuya Mizumoto, Hideki Yokoi, Nobuhiro Shinjo, Naoki Futakuchi, Yoshiaki Nakano

    Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS   2   700 - 701   2000年12月 (   ISSN:1092-8081 )

     詳細

    An optical isolator composed of a semiconductor guiding layer is studied. The isolator employing a nonreciprocal phase shift was fabricated by using wafer bonding technique. The nonreciprocal phase shift was measured in the fabricated device.

  • Kinetic ellipsometry measurement of InGaP/GaAs hetero-interface formation in MOVPE

    T Nakano, Y Nakano, Y Shimogaki

    JOURNAL OF CRYSTAL GROWTH   221   136 - 141   2000年12月 (   ISSN:0022-0248 )

     詳細

    記述言語:英語   出版者・発行元:ELSEVIER SCIENCE BV  

    In order to fabricate monolayer (ML)-abrupt hetero-interfaces. we investigated the surface phenomena during MOVPE using in situ kinetic ellipsometry. We studied the adsorption/desorption kinetics of group-V atoms on InGaP surface during gas-switching sequence to form InGaP/GaAs structure. When switching from InGaP growth to GaAs growth, first TMIn and TMGa supplies were stopped and excess amount of phosphorus was desorbed rapidly by stopping the TBP (tertiarybutylphosphine) supply. Purging monolayer phosphorus, which was bonded to In, or Ga required 0.8 s TBAs (tertiarybutylarsine) flow. No arsenic penetrated into the InGaP layer during TBAs introduction. Based on those observations, we devised optimum gas-switching sequence to obtain abrupt hetero-interface with ML unit. Photo-luminescence peak from the quantum well fabricated with this sequence shifted to shorter wavelength, showing the effectiveness of this sequence. (C) 2000 Elsevier Science B.V, All rights reserved.

    DOI: 10.1016/S0022-0248(00)00673-4

  • Photon-Induced Waveguides for All-Optical Switching and Wavelength Conversion

    MA Byongjin, SAITOH Masumi, NAKANO Yoshiaki

    IEICE transactions on electronics   83 ( 10 )   1683 - 1686   2000年10月 (   ISSN:0916-8524 )

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    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    A photon-induced waveguide(PIG)for all-optical switching and wavelength conversion with the functionalities of regeneration and reshaping is proposed. Optical signals are used to switch between lateral optical wave guiding and antiguiding effects. A transfer-matrix method was developed to consider not only the variation of optical signal power along the waveguide, but also the spatial distributions of refractive index and optical confinement factor to explain the switching scheme between guiding and antiguiding. Theoretical analyses show that a threshold-like and sharp input-output response of PIG allows enhancement of the extinction ratio, reshaping, and thus enlargement of noise margin of optical signals in digital all-optical switching and wavelength conversion.

  • 全光スイッチングのためのグレーティング装荷非線形方向性結合器の検討

    中津原克己, 水本哲弥, JEONG S‐H, 白土隆史, MA B‐J, 中野義昭

    電子情報通信学会技術研究報告   100 ( 353(PS2000 32-35) )   13 - 18   2000年10月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    グレーティング装荷非線形方向性結合器は、全光ルーティングに応用でき、集積化に適した構造である。本素子は高速な非線形光学効果である光カー効果を動作原理に用いており、電子デバイスの速度限界を超える光信号処理が可能になると期待できる。本論文では、試作した素子において、信号光と異なる波長を有する制御光を用いて全光スイッチングを実証したので報告する。

  • 全光スイッチングのためのグレーティング装荷非線形方向性結合器の検討

    中津原 克己, 水本 哲弥, 鄭 錫煥, 白土 隆史, 馬 炳真, 中野 義昭

    電子情報通信学会技術研究報告. PS, 光スイッチング   100 ( 353 )   13 - 18   2000年10月 (   ISSN:0913-5685 )

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    グレーティング装荷非線形方向性結合器は、全光ルーティングに応用でき、集積化に適した構造である。本素子は高速な非線形光学効果である光カー効果を動作原理に用いており、電子デバイスの速度限界を超える光信号処理が可能になると期待できる。本論文では、試作した素子において、信号光と異なる波長を有する制御光を用いて全光スイッチングを実証したので報告する。

  • 分子レベルの新機能発現を通じた技術革新 電子・光子等の機能制御 人工光物性に基づく新しい光子制御デバイス (科学技術振興事業団基礎研究推進部S)

    中野義昭

    戦略的基礎研究推進事業研究年報   1999   660 - 664   2000年10月

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    記述言語:日本語  

  • C-3-128 InGaAs/InGaAsP多重量子井戸構造を用いた0.9μm帯リッジ型SLD素子の2Gbit/s変調特性

    梁 吉鎬, 丸山 剛, 小川 芳宏, 小林 静一郎, 園田 純一, 浦江 博志, 富田 尚太郎, 富岡 優子, 今 智司, 中野 義昭

    電子情報通信学会ソサイエティ大会講演論文集   2000 ( 1 )   254 - 254   2000年9月

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • B-12-2 グレーティング装荷方向性結合器における全光スイッチング動作

    中津原 克己, 水本 哲弥, 白土 隆史, 鄭 錫煥, 馬 炳真, 中野 義昭

    電子情報通信学会ソサイエティ大会講演論文集   2000 ( 2 )   418 - 418   2000年9月

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • C-4-19 MQW-EA変調器を用いた全光Mach-Zehnder干渉計スイッチ/波長変換器の提案

    加藤 正樹, 中野 義昭

    電子情報通信学会ソサイエティ大会講演論文集   2000 ( 1 )   290 - 290   2000年9月

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • C-3-80 信号光と直交する偏光制御光を用いる全光スイッチング

    鄭 錫煥, 中津原 克己, 水本 哲弥, 馬 炳真, 中野 義昭

    電子情報通信学会ソサイエティ大会講演論文集   2000 ( 1 )   206 - 206   2000年9月

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • C-3-67 半導体導波層を有する干渉形光アイソレータの動作実証

    横井 秀樹, 水本 哲弥, 黒田 晋平, 二口 尚樹, 中野 義昭

    電子情報通信学会ソサイエティ大会講演論文集   2000 ( 1 )   193 - 193   2000年9月

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • 全光スイッチに向けた機能性多モード干渉デバイス : 設計と試作

    宋 学良, 宮下 大輔, 並木 亮介, 二口 尚樹, 加藤 正樹, 中野 義昭

    電子情報通信学会ソサイエティ大会講演論文集   2000 ( 1 )   205 - 205   2000年9月

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    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

  • 重み付け電子線露光を用いた線型チャープトグレーティングDFBレーザ増幅器の作製

    田島 卓郎, アサワメターパン, ウイーラチャイ, 林 國人, メイワー ドリュー N, 中野 義昭

    電子情報通信学会ソサイエティ大会講演論文集   2000 ( 1 )   285 - 285   2000年9月

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    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

  • InGaAs/InAlAs MQW‐EA変調器における光誘起屈折率変化と全光デバイスへの応用

    加藤正樹, 中野義昭

    応用物理学会学術講演会講演予稿集   61st ( 3 )   1028   2000年9月

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    記述言語:日本語  

  • MOVPEにおけるGaAs/InGaPヘテロ界面形成の動的エリプソメトリ法によるその場観察(2)

    中野貴之, 中野義昭, 霜垣幸浩

    応用物理学会学術講演会講演予稿集   61st ( 1 )   255   2000年9月

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    記述言語:日本語  

  • ヒートシンクの熱応力がInGaAsP系長波長半導体レーザの温度特性に与える影響

    井上大介, 加藤正樹, 中野義昭

    応用物理学会学術講演会講演予稿集   61st ( 3 )   996   2000年9月

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    記述言語:日本語  

  • 傾斜リッジ導波路を用いた高速SLD

    LIANG J‐H, 小川芳宏, 小林静一郎, 園田純一, 浦江博志, 富田尚太郎, 富岡優子, 今智司, 丸山剛, 中野義昭

    応用物理学会学術講演会講演予稿集   61st ( 3 )   1002   2000年9月

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    記述言語:日本語  

  • 半導体光スイッチ・波長変換素子

    中野義昭

    応用物理学会学術講演会講演予稿集   61st ( 0 )   37   2000年9月

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    記述言語:日本語  

  • 屈折率変調型グレーティングによる有機固体色素DFBレーザ 有機半導体レーザ(1)

    名川倫郁, 市川結, 小山俊樹, 谷口彬雄, 本郷晃史, 辻伸二, 中野義昭

    応用物理学会学術講演会講演予稿集   61st ( 3 )   1122   2000年9月

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    記述言語:日本語  

  • 機能性多モード干渉(MMI)デバイスの設計と試作

    SONG Xueliang, 宮下大輔, 並木亮介, 二口尚樹, 加藤正樹, 中野義昭

    応用物理学会学術講演会講演予稿集   61st ( 3 )   1037   2000年9月

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    記述言語:日本語  

  • 選択MOVPE成長におけるIII族供給分圧によるV族組成への影響

    二口尚樹, 今田忠紘, 中野義昭

    応用物理学会学術講演会講演予稿集   61st ( 1 )   254   2000年9月

     詳細

    記述言語:日本語  

  • Demonstration of All-Optical Wavelength Converter Based on Fabry-Perot Semiconductor Optical Amplifier

    SAITOH Masumi, TAKENAKA Mitsuru, MA Byongjin, NAKANO Yoshiaki

    Extended abstracts of the ... Conference on Solid State Devices and Materials   2000   78 - 79   2000年8月

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    記述言語:英語  

  • InGaAsP系化合物半導体結晶成長メカニズムと組成・成長速度のシミュレーション

    霜垣幸浩, FERON O, 杉山正和, 中野義昭

    化学工学会秋季大会研究発表講演要旨集   33rd   124   2000年8月

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    記述言語:日本語  

  • 分光エプソメトリによるその場観察を活用したGaAs/InGaP界面の構造制御

    中野貴之, 中野義昭, 霜垣幸浩

    化学工学会秋季大会研究発表講演要旨集   33rd   136   2000年8月

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    記述言語:日本語  

  • ブラッグ反射器装荷形非線形導波路全光スイッチにおける制御光波長依存性

    JEONG S‐H, 中津原克己, 水本哲弥, MA B‐J, 中野義昭

    電子情報通信学会技術研究報告   100 ( 234(OFT2000 31-43) )   37 - 42   2000年7月 (   ISSN:0913-5685 )

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    記述言語:日本語  

  • 可変多重時分割光交換方式の波長割り当て光交換方式(WAPS)への適用

    安井直彦, 中野義昭

    電子情報通信学会技術研究報告   100 ( 233(OFT2000 21-30) )   25 - 30   2000年7月 (   ISSN:0913-5685 )

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    記述言語:日本語  

  • OCS2000-41 / PS2000-25 / OFT2000-37 ブラッグ反射器装荷形非線形導波路全光スイッチにおける制御光波長依存性

    鄭 錫煥, 中津原 克己, 水本 哲弥, 馬 炳真, 中野 義昭

    電子情報通信学会技術研究報告. OFT, 光ファイバ応用技術   100 ( 234 )   37 - 42   2000年7月 (   ISSN:0913-5685 )

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    将来の超高速情報処理に対応する必要不可欠な要素として、OE/EO変換による電子デバイスの応答速度の制限を受けない全光スイッチの実現が期待されている。ブラッグ反射器装荷形非線形導波路全光スイッチは、高速な非線形光学効果を用いて光信号を光で直接処理することが可能であり、電子デバイスの速度限界を超える処理が期待できる。本論文では、ブラッグ反射器装荷形非線形導波路において、信号光と異なる波長および偏光を有する制御光を用いて全光スイッチング動作を実証し、制御光波長に対するスイッチング動作パワー依存性を検討した結果を報告する。

  • OCS2000-41 / PS2000-25 / OFT2000-37 ブラッグ反射器装荷形非線形導波路全光スイッチにおける制御光波長依存性

    鄭 錫煥, 中津原 克己, 水本 哲弥, 馬 炳真, 中野 義昭

    電子情報通信学会技術研究報告. OCS, 光通信システム   100 ( 230 )   37 - 42   2000年7月 (   ISSN:0913-5685 )

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    将来の超高速情報処理に対応する必要不可欠な要素として、OE/EO変換による電子デバイスの応答速度の制限を受けない全光スイッチの実現が期待されている。ブラッグ反射器装荷形非線形導波路全光シイッチは、高速な非線形光学効果を用いて光信号を光で直接処理することが可能であり、電子デバイスの速度限界を超える処理が期待できる。本論文では、ブラッグ反射器装荷形非線形導波路において、信号光と異なる波長および偏光を有する制御光を用いて全光スイッチング動作を実証し、制御光波長に対するスイッチング動作パワー依存性を検討した結果を報告する。

  • OCS2000-41 / PS2000-25 / OFT2000-37 ブラッグ反射器装荷形非線形導波路全光スイッチにおける制御光波長依存性

    鄭 錫煥, 中津原 克己, 水本 哲弥, 馬 炳真, 中野 義昭

    電子情報通信学会技術研究報告. PS, 光スイッチング   100 ( 232 )   37 - 42   2000年7月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    将来の超高速情報処理に対応する必要不可欠な要素として、OE/EO変換による電子デバイスの応答速度の制限を受けない全光スイッチの実現が期待されている。ブラッグ反射器装荷形非線形導波路全光スイッチは、高速な非線形光学効果を用いて光信号を光で直接処理することが可能であり、電子デバイスの速度限界を超える処理が期待できる。本論文では、ブラッグ反射器装荷形非線形導波路において、信号光と異なる波長および偏光を有する制御光を用いて全光スイッチング動作を実証し、制御光波長に対するスイッチング動作パワー依存性を検討した結果を報告する。

  • OCS2000-29 / PS2000-13 / OFT2000-25 可変多重時分割光交換方式の波長割り当て光交換方式(WAPS)への適用

    安井 直彦, 中野 義昭

    電子情報通信学会技術研究報告. OCS, 光通信システム   100 ( 229 )   25 - 30   2000年7月 (   ISSN:0913-5685 )

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    多重化回路、分離回路の入出力の関係を可変にし、多段に組み合わせた可変多重分離スイッチが光デバイスの進歩により光領域での実現可能性が出てきた。その原理および波長割り当て光交換方式(WAPS)への適用について検討し、WAPSの1つの問題点である波長の帯域の有効利用が出来ないことに対する解を提供すること、また多重化インタフェースを加入者に直接開示することによって等価的にサブネットワークの数を増し、ネットワーク制御の簡略化に寄与し得ることを述べる。

  • OCS2000-29 / PS2000-13 / OFT2000-25 可変多重時分割光交換方式の波長割り当て光交換方式(WAPS)への適用

    安井 直彦, 中野 義昭

    電子情報通信学会技術研究報告. OFT, 光ファイバ応用技術   100 ( 233 )   25 - 30   2000年7月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    多重化回路、分離回路の入出力の関係を可変にし、多段に組み合わせた可変多重分離スイッチが光デバイスの進歩により光領域での実現可能性が出てきた。その原理および波長割り当て光交換方式(WAPS)への適用について検討し、WAPSの1つの問題点である波長の帯域の有効利用が出来ないことに対する解を提供すること、また多重化インタフェースを加入者に直接開示することによって等価的にサブネットワークの数を増し、ネットワーク制御の簡略化に寄与し得ることを述べる。

  • OCS2000-29 / PS2000-13 / OFT2000-25 可変多重時分割光交換方式の波長割り当て光交換方式(WAPS)への適用

    安井 直彦, 中野 義昭

    電子情報通信学会技術研究報告. PS, 光スイッチング   100 ( 231 )   25 - 30   2000年7月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    多重化回路、分離回路の入出力の関係を可変にし、多段に組み合わせた可変多重分離スイッチが光デバイスの進歩により光領域での実現可能性が出てきた。その原理および波長割り当て光交換方式(WAPS)への適用について検討し、WAPSの1つの問題点である波長の帯域の有効利用が出来ないことに対する解を提供すること、また多重化インタフェースを加入者に直接開示することによって等価的にサブネットワークの数を増し、ネットワーク制御の簡略化に寄与し得ることを述べる。

  • MQW‐EA変調器における光誘起屈折率変化を利用した全光スイッチ/波長変換器の提案

    加藤正樹, 中野義昭

    電子情報通信学会技術研究報告   100 ( 169(OPE2000 32-43) )   43 - 48   2000年7月 (   ISSN:0913-5685 )

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    記述言語:日本語  

  • OPE2000-40 / LQE2000-34 MQW-EA変調器における光誘起屈折率変化を利用した全光スイッチ/波長変換器の提案

    加藤 正樹, 中野 義昭

    電子情報通信学会技術研究報告. OPE, 光エレクトロニクス   100 ( 169 )   43 - 48   2000年6月 (   ISSN:0913-5685 )

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    InGaAs/InAlAs MQW-EA変調器における光誘起屈折率変化を用いた全光スイッチ/波長変換器を提案し、その解析を行った。Mach-Zehnder干渉計の位相シフト領域にMQW-EA変調器を配置し、EA変調器の吸収端波長内の制御光を入射することにより、吸収飽和を起こさせる。その結果として生じる屈折率変化により吸収端の外の光を制御(スイッチング/波長変換)することができる。

  • OPE2000-40 / LQE2000-34 MQW-EA変調器における光誘起屈折率変化を利用した全光スイッチ/波長変換器の提案

    加藤 正樹, 中野 義昭

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   100 ( 170 )   43 - 48   2000年6月 (   ISSN:0913-5685 )

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    InGaAs/InAlAs MQW-EA変調器における光誘起屈折率変化を用いた全光スイッチ/波長変換器を提案し、その解析を行った。Mach-Zehnder干渉計の位相シフト領域にMQW-EA変調器を配置し、EA変調器の吸収端波長内の制御光を入射することにより、吸収飽和を起こさせる。その結果として生じる屈折率変化により吸収端の外の光を制御(スイッチング/波長変換)することができる。

  • 60 nm Wavelength Range Polarization-Insensitive 1.55 μm Electroabsorption Modulator Using Tensile-Strained Pre-Biased Multiple Quantum Well

    KATO Masaki, NAKANO Yoshiaki

    IEICE transactions on electronics   83 ( 6 )   927 - 935   2000年6月 (   ISSN:0916-8524 )

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    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    We studied theoretically and experimentally an InGaAs/InAlAs/InP polarization-insensitive multiple quantum well(MQW) electroabsorption(EA) modulator operating over a very wide wavelength range in 1.55μm wavelength region. One of the simplest possible potential-tailored quantum well, "pre-biased"quantum well(PBQW) is used to achieve wide-wavelength polarization insensitivity. PBQW is basically a rectangular quantum well with a thin barrier inserted near one edge of well. This thin barrier effectively introduces"pre-bias"to a rectangular quantum well and the same amount of Stark shift is achieved for electron-heavy hole and electron-light hole transition energies. By incorporating tensile strain into PBQW, polarization-insensitive modulation is achieved over 60nm wavelength range, from 1510nm to 1570nm. This MQW-EA modulator plays an important role in wavelength division multiplexing(WDM) transmission and switching systems.

  • 半導体導波層を有する光アイソレータの動作実証

    横井秀樹, 水本哲弥, 新城伸大, 二口尚樹, 中野義昭

    電子情報通信学会技術研究報告   100 ( 95(OPE2000 1-11) )   55 - 60   2000年5月 (   ISSN:0913-5685 )

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    記述言語:日本語  

  • 重み付け電子線露光によるチャープトグレーティングの試作とDFBレーザへの応用

    田島卓郎, 林国人, MAYWAR D N, ASAWAMETHAPANT W, 中野義昭

    電子情報通信学会技術研究報告   100 ( 95(OPE2000 1-11) )   43 - 48   2000年5月 (   ISSN:0913-5685 )

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    記述言語:日本語  

  • 半導体導波層を有する光アイソレータの動作実証

    横井 秀樹, 水本 哲弥, 新城 伸大, 二口 尚樹, 中野 義昭

    電子情報通信学会技術研究報告. OPE, 光エレクトロニクス   100 ( 95 )   55 - 60   2000年5月 (   ISSN:0913-5685 )

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    二枚の基板を接着剤を用いずに貼り合わせるダイレクトボンディング技術を用いることにより、半導体を導波層とする集積形光アイソレータが製作可能となる。非相反移相効果を用いた、半導体導波層を有する光アイソレータについて報告する。光アイソレータを構成するテーパ状3分岐光結合器、非相反移相器、相反移相器の特性について述べる。基本的な光アイソレータの動作実証を行った結果についても併せて述べる。

  • 重み付け電子線露光によるチャープトグレーティングの試作とDFBレーザへの応用

    田島 卓郎, 林 國人, メイワー D.N, アサワメーターパン W, 中野 義昭

    電子情報通信学会技術研究報告. OPE, 光エレクトロニクス   100 ( 95 )   43 - 48   2000年5月 (   ISSN:0913-5685 )

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    重み付け電子線露光によるチャープトグレーティングの描画法を提案する。本描画法は、フィールドサイズ変調法に重み付け電子線露光を組み合わせることで、線形チャープトグレーティングを形成するものである。また、実際にチャープトグレーティング(CG)分布帰還型(DFB)レーザを試作し、その光双安定性を測定した。測定結果によれば、CG DFBレーザにおいて双安定遷移が生ずる光パワーは、通常のDFBレーザに比べ約1/4と小さく、入力光の波長についても通常のDFBレーザに比べほぼ2倍の範囲で双安定性が観測された。

  • 時間ジャンパを用いた可変多重分離時分割光交換方式

    安井直彦, 中野義昭

    電子情報通信学会論文誌 B   J83-B ( 4 )   457 - 470   2000年4月 (   ISSN:1344-4697 )

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    時分割パルスの幅は, それよりも短い時間間隔の処理からみると, その時間幅のなかでは任意の時間に読み出せ, 一種のメモリとして機能させることができる.既に提案した可変多重分離時分割交換方式は, この点に着目して, ランダムアクセスメモリを必要としないで単にゲート機能のみで構成した一種の時分割交換方式であり, 光交換技術に適した方式である.本論文では, 以前の提案時には考慮されていなかった多段可変多重スイッチ, 多段可変分離スイッチの間に時間的ジャンパを導入した可変多重分離時分割交換方式を新たに提案し, その方式構成, 時間ジャンパのアルゴリズム, ジャンパ実現法, 通話路の呼損率の定式化, 及び呼量当りのコストが最小となる最適な通話路構成を求めて, その有効性を明らかにする.本方式は, 以前提案した並列方式に比して優れたトラヒック特性をもち, 容量当りのコストにおいて優れていること, 波長割当光交換方式に本方式を適用することによって, より伝送路の有効利用の図れるシステムを構築できることを明らかにする.

  • 時間ジャンパを用いた可変多重分離時分割光交換方式

    安井 直彦, 中野 義昭

    電子情報通信学会論文誌. B, 通信   83 ( 4 )   457 - 470   2000年4月 (   ISSN:1344-4697 )

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    時分割パルスの幅は, それよりも短い時間間隔の処理からみると, その時間幅のなかでは任意の時間に読み出せ, 一種のメモリとして機能させることができる.既に提案した可変多重分離時分割交換方式は, この点に着目して, ランダムアクセスメモリを必要としないで単にゲート機能のみで構成した一種の時分割交換方式であり, 光交換技術に適した方式である.本論文では, 以前の提案時には考慮されていなかった多段可変多重スイッチ, 多段可変分離スイッチの間に時間的ジャンパを導入した可変多重分離時分割交換方式を新たに提案し, その方式構成, 時間ジャンパのアルゴリズム, ジャンパ実現法, 通話路の呼損率の定式化, 及び呼量当りのコストが最小となる最適な通話路構成を求めて, その有効性を明らかにする.本方式は, 以前提案した並列方式に比して優れたトラヒック特性をもち, 容量当りのコストにおいて優れていること, 波長割当光交換方式に本方式を適用することによって, より伝送路の有効利用の図れるシステムを構築できることを明らかにする.

  • MOVPEにおけるGaAs/InGaPヘテロ界面形成の動的エリプソメトリ法によるその場観察

    中野貴之, 中野義昭, 霜垣幸浩

    応用物理学関係連合講演会講演予稿集   47th ( 1 )   326   2000年3月

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    記述言語:日本語  

  • TBP・TBAを用いた選択MOVPE成長におけるV族分圧の影響

    二口尚樹, 高田泰彦, 中野義昭

    応用物理学関係連合講演会講演予稿集   47th ( 1 )   337   2000年3月

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    記述言語:日本語  

  • ハイメサ導波路構造を用いる全光スイッチにおける偏波依存性の低減

    JEONG Seok‐Hwan, 中津原克己, 水本哲弥, MA Byong‐Jin, 中野義昭

    応用物理学関係連合講演会講演予稿集   47th ( 3 )   1188   2000年3月

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    記述言語:日本語  

  • ファブリペロ半導体光アンプ型波長変換器の提案と実証

    齋藤真澄, MA Byongjin, 竹中充, 中野義昭

    応用物理学関係連合講演会講演予稿集   47th ( 3 )   1186   2000年3月

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    記述言語:日本語  

  • 偏光無依存プリバイアス量子井戸電界吸収型光変調器の作製許容誤差の検討

    加藤正樹, 中野義昭

    応用物理学関係連合講演会講演予稿集   47th ( 3 )   1193   2000年3月

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    記述言語:日本語  

  • 低電圧動作光スイッチのためのInGaAs/InAlAs/InP非対称三重結合量子井戸

    深津公良, 加藤正樹, 中野義昭

    応用物理学関係連合講演会講演予稿集   47th ( 3 )   1193   2000年3月

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    記述言語:日本語  

  • 方向性結合半導体光増幅器を用いた波長変換の時間応答特性

    齋藤真澄, MA Byongjin, 中野義昭

    応用物理学関係連合講演会講演予稿集   47th ( 3 )   1186   2000年3月

     詳細

    記述言語:日本語  

  • InGaAs/InAlAs歪補償プリバイアス量子井戸によるMQW‐EA変調器の偏光無依存負チャープ動作

    加藤正樹, 中野義昭

    電子情報通信学会大会講演論文集   2000 ( 1 )   363 - 363   2000年3月 (   ISSN:1349-1369 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • InGaAs/InAlAs歪補償プリバイアス量子井戸によるMQW-EA変調器の偏光無依存負チャープ動作

    加藤 正樹, 中野 義昭

    電子情報通信学会総合大会講演論文集   2000 ( 1 )   363 - 363   2000年3月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • 半導体デジタル波長変換器

    中野義昭

    電子情報通信学会大会講演論文集   2000 ( 1 )   284 - 284   2000年3月 (   ISSN:1349-1369 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • 半導体デジタル波長変換器

    中野 義昭

    電子情報通信学会総合大会講演論文集   2000 ( 1 )   284 - 284   2000年3月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • Analysis and Fabrication of an All-Optical Wavelength Converter Based on Directionally-Coupled Semiconductor Optical Amplifiers

    MA Byongjin, SAITOH Masumi, NAKANO Yoshiaki

    IEICE transactions on electronics   83 ( 2 )   248 - 254   2000年2月 (   ISSN:0916-8524 )

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    The operation of a novel all-optical wavelength converter based on directionally-coupled semiconductor optical amplifiers is described. Merits such as extinction enhancement and digital response are expected through a simple analytical model and a sophisticated transfer matrix method developed to take into account the spatial distributions of the optical power, carrier density, refractive index, propagation constant, and coupling coefficient along device. We fabricated devices operating at 1.55μm band using an InGaAsP / InP material system and demonstrated successfully the static characteristics of wavelength conversion with the expected advantages. Devices are as small as 1.5mm and do not need any active / passive integration step during fabrication.

  • 光制御光スイッチの偏光無依存化の検討

    水本哲弥, 中津原克己, JEONG S‐H, 中野義昭, MA B‐J

    映像情報メディア学会技術報告   24 ( 13(ROFT2000 23-36) )   1 - 6   2000年2月 (   ISSN:1342-6893 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人映像情報メディア学会  

    All-optical switch controlled directly with light will be an indispensable component for the implementation of highspeed transmission network from the standpoint of ultrafast processing speed. The deep-ridge DFB waveguide having no structural polarization dependence can be utilized in the photonic network in which diverse types of polarization are launched. In this paper, the requirements of deep-ridge waveguide for polarization insensitivity are examined through semi-vector finite element approach, then, the device based on calculation results is fabricated. From the calculation results, it is possible to reduce polarization sensitivity by utilizing deep-ridge waveguide structure.

    DOI: 10.11485/itetr.24.13.0_1

  • 光制御光スイッチの偏光無依存化の検討

    鄭 錫煥, 水本 哲弥, 中津原 克己, 馬 炳真, 中野 義昭

    映像情報メディア学会技術報告   24 ( 13 )   1 - 6   2000年2月 (   ISSN:1342-6893 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人映像情報メディア学会  

    All-optical switch controlled directly with light will be an indispensable component for the implementation of highspeed transmission network from the standpoint of ultrafast processing speed. The deep-ridge DFB waveguide having no structural polarization dependence can be utilized in the photonic network in which diverse types of polarization are launched. In this paper, the requirements of deep-ridge waveguide for polarization insensitivity are examined through semi-vector finite element approach, then, the device based on calculation results is fabricated. From the calculation results, it is possible to reduce polarization sensitivity by utilizing deep-ridge waveguide structure.

    DOI: 10.11485/itetr.24.13.0_1

  • ファブリペロ型半導体光増幅器を用いた波長変換

    齋藤 真澄, 馬 炳眞, 竹中 充, 中野 義昭

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   99 ( 546 )   31 - 36   2000年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    本発表では、ファブリペロ型半導体光増幅器を用いた波長変換方式を提案する。この方式は、光注入に伴う増幅率スペクトルの波長軸上での移動を利用したものであり、作製の容易さ、0.1mWオーダの入力光パワーでの動作、非反転型動作、光波長分割多重通信システムとの整合性の良さなどの利点を持つ。実際に2.5Gb/sでの非反転型波長変換動作、及び2Gb/sでの反転型波長変換動作を確認した。さらに、時間に依存した伝達行列法に基づく動作シミュレーション手法を開発した。

  • ファブリペロ型半導体光増幅器を用いた波長変換

    齋藤 真澄, 馬 炳眞, 竹中 充, 中野 義昭

    電子情報通信学会技術研究報告. OPE, 光エレクトロニクス   99 ( 544 )   31 - 36   2000年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    本発表では、ファブリペロ型半導体光増幅器を用いた波長変換方式を提案する。この方式は、光注入に伴う増幅率スペクトルの波長軸上での移動を利用したものであり、作製の容易さ、0.1mWオーダの入力光パワーでの動作、非反転型動作、光波長分割多重通信システムとの整合性の良さなどの利点を持つ。実際に2.5Gb/sでの非反転型波長変換動作、及び2Gb/sでの反転型波長変換動作を確認した。さらに、時間に依存した伝達行列法に基づく動作シミュレーション手法を開発した。

  • ファブリペロ型半導体光増幅器を用いた波長変換

    齋藤 真澄, 馬炳 眞, 竹中 充, 中野 義昭

    電子情報通信学会技術研究報告. PS, 光スイッチング   99 ( 542 )   31 - 36   2000年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    本発表では、ファブリペロ型半導体増幅器を用いた波長変換方式を提案する。この方式は、光注入に伴う増幅率スペクトルの波長軸上での移動を利用したものであり、作製の容易さ、0.1mWオーダの入力光パワーでの動作、非反転型動作、光波長分割多重通信システムとの整合性の良さなどの利点を持つ。実際に2.5Gb/sでの非反転型波長変換動作、及び2Gb/sでの反転型波長変換動作を確認した。さらに、時間に依存した伝達行列法に基づく動作シミュレーション手法を開発した。

  • ファブリペロ型半導体光増幅器を用いた波長変換

    齋藤 真澄, 馬 炳眞, 竹中 充, 中野 義昭

    電気学会研究会資料. : The Papers of Technical Meeting on Electromagnetic Theory, IEE Japan. EMT, 電磁界理論研究会   2000 ( 14 )   31 - 36   2000年1月

     詳細

    記述言語:日本語  

  • ファブリペロ型半導体光増幅器を用いた波長変換

    斎藤真澄, MA B, 竹中充, 中野義昭

    電子情報通信学会技術研究報告   99 ( 542(PS99 76-90) )   31 - 36   2000年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語  

  • 全光スイッチの偏光無依存化の検討

    JEONG S‐H, 水本哲弥, 中津原克己, MA B‐J, 中野義昭

    電子情報通信学会技術研究報告   99 ( 541(PS99 63-75) )   1 - 6   2000年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語  

  • 全光スイッチの偏光無依存化の検討

    鄭 錫煥, 水本 哲弥, 中津原 克己, 馬 炳真, 中野 義昭

    電気学会研究会資料. : The Papers of Technical Meeting on Electromagnetic Theory, IEE Japan. EMT, 電磁界理論研究会   2000 ( 1 )   1 - 6   2000年1月

     詳細

    記述言語:日本語  

  • 全光スイッチの偏光無依存化の検討

    鄭 錫煥, 水木 哲弥, 中津原 克己, 馬 炳真, 中野 義昭

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   99 ( 545 )   1 - 6   2000年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    電気的制御によるスイッチング速度の制限を受けない全光スイッチは、将来の超高速情報処理に対応する必要不可欠なキーデバイスとして実現が期待されている。ハイメサ導波路構造を用いる分布帰還光導波路は、構造を適当に選ぶことによって偏光無依存化を実現できるため、様々な偏光を有する信号が到達するフォトニックネットワークのノードにおいて機能素子としての適用範囲が格段に広がる。本論文では、ハイメサ分布帰還光導波路においてシミュレーション計算を行った後、素子の試作を行い、素子構造により偏光依存性が低減できることを検討した結果を報告する。

  • 全光スイッチの偏光無依存化の検討

    鄭 錫煥, 水本 哲弥, 中津原 克己, 馬 炳真, 中野 義昭

    電子情報通信学会技術研究報告. OPE, 光エレクトロニクス   99 ( 543 )   1 - 6   2000年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    電気的制御によるスイッチング速度の制限を受けない全光スイッチは、将来の超高速情報処理に対応する必要不可欠なキーデバイスとして実現が期待されている。ハイメサ導波路構造を用いる分布帰還光導波路は、構造を適当に選ぶことによって偏光無依存化を実現できるため、様々な偏光を有する信号が到達するフォトニックネットワークのノードにおいて機能素子としての適用範囲が格段に広がる。本論文では、ハイメサ分布帰還導波路においてシミュレーション計算を行った後、素子の試作を行い、素子構造により偏光依存性が低減できることを検討した結果を報告する。

  • 全光スイッチの偏光無依存化の検討

    鄭 錫煥, 水本 哲弥, 中津原 克己, 馬 炳真, 中野 義昭

    電子情報通信学会技術研究報告. PS, 光スイッチング   99 ( 541 )   1 - 6   2000年1月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    電気的制御によるスイッチング速度の制限を受けない全光スイッチは、将来の超高速情報処理に対応する必要不可欠なキーデバイスとして実現が期待されている。ハイメサ導波路構造を用いる分布帰還光導波路は、構造を適当に選ぶことによって偏光無依存化を実現できるため、様々な偏光を有する信号が到達するフォトニックネットワークのノードにおいて機能素子としての適用範囲が格段に広がる。本論文では、ハイメサ分布帰還光導波路においてシミュレーション計算を行った後、素子の試作を行い、素子構造により偏光依存性が低減できることを検討した結果を報告する。

  • 光アイソレータ

    中野義昭

    特許第3054707号   2000年

  • Wafer surface treatment for bonding GaInAsP and magnetooptic garnet

    Tetsuya Mizumoto, Hideki Yokoi, Masafumi Shimizu, Takashi Waniishi, Naoki Futakuchi, Noriaki Kaida, Yoshiaki Nakano

    Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS   2   503 - 504   1999年12月 (   ISSN:1092-8081 )

     詳細

    GaInAsP surfaces were investigated by contact angle measurement to estimate their hydrophilicity for completing wafer direct bonding with magnetooptic garnet. The highly hydrophilic surface of GaInAsP was obtained by O2 plasma activation process with a subsequent dip in water. The wafer exposed to O2 plasma with a subsequent dip in water showed high hydrophilicity. Wafer direct bonding was achieved between O2 plasma activated GaInAsP and garnet crystals.

  • 伸張歪変調ポテンシャル量子井戸を用いた偏光無依存ブルーチャープEA変調器

    加藤 正樹, 中野 義昭

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   99 ( 467 )   7 - 12   1999年11月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    偏光無依存化を目指して開発された伸張歪InGaAs/InAlAsプリバイアス量子井戸について、チャープパラメータの解析を行った。バリアに使われているInAlAsに圧縮歪を加えることによりチャープパラメータの低減、あるいは負チャープ化に必要な印加電圧を低減できることが分かった。これはInAlAsバリアに圧縮歪を加えることにより電子、ホールの井戸が浅くなり、両者の波動関数が電界を印加した際、それぞれ逆方向に大きく分離するためである。

  • 伸張歪変調ポテンシャル量子井戸を用いた偏光無依存ブルーチャープEA変調器

    加藤 正樹, 中野 義昭

    電子情報通信学会技術研究報告. OCS, 光通信システム   99 ( 463 )   7 - 12   1999年11月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    偏光無依存化を目指して開発された伸張歪InGaAs/InAlAsプリバイアス量子井戸について、チャープパラメータの解析を行った。バリアに使われているInAlAsに圧縮歪を加えることによりチャープパラメータの低減、あるいは負チャープ化に必要な印加電圧を低減できることが分かった。これはInAlAsバリアに圧縮歪を加えることにより電子、ホールの井戸が浅くなり、両者の波動関数が電界を印加した際、それぞれ逆方向に大きく分離するためである。

  • 伸張歪変調ポテンシャル量子井戸を用いた偏光無依存ブルーチャープEA変調器

    加藤正樹, 中野義昭

    電子情報通信学会技術研究報告   99 ( 465(OPE99 90-104) )   7 - 12   1999年11月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語  

  • 伸張歪変調ポテンシャル量子井戸を用いた偏光無依存ブルーチャープEA変調器

    加藤 正樹, 中野 義昭

    電子情報通信学会技術研究報告   99 ( 467 )   7 - 12   1999年11月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:電子情報通信学会  

  • 伸張歪変調ポテンシャル量子井戸を用いた偏光無依存ブルーチャープEA変調器

    加藤 正樹, 中野 義昭

    電子情報通信学会技術研究報告. OPE, 光エレクトロニクス   99 ( 465 )   7 - 12   1999年11月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    偏光無依存化を目指して開発された伸張歪InGaAs/InAlAsプリバイアス量子井戸について、チャープパラメータの解析を行った。バリアに使われているInAlAsに圧縮歪を加えることによりチャープパラメータの低減、あるいは負チャープ化に必要な印加電圧を低減できることが分かった。これはInAlAsバリアに圧縮歪を加えることにより電子、ホールの井戸が浅くなり、両者の波動関数が電界を印加した際、それぞれ逆方向に大きく分離するためである。

  • 伸張歪変調ポテンシャル量子井戸を用いた偏光無依存ブルーチャープEA変調器

    加藤 正樹, 中野 義昭

    電子情報通信学会技術研究報告   99 ( 465 )   7 - 12   1999年11月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:電子情報通信学会  

  • 方向性結合半導体アンプ型波長変換器の勤特性解析

    馬 炳眞, 齋藤 真澄, 中野 義昭

    電子情報通信学会技術研究報告   99 ( 465 )   1 - 6   1999年11月 (   ISSN:0913-5685 )

     詳細

    記述言語:英語   出版者・発行元:電子情報通信学会  

  • 方向性結合半導体アンプ型波長変換器の動特性解析

    馬 柄眞, 齋藤 真澄, 中野 義昭

    電子情報通信学会技術研究報告. OCS, 光通信システム   99 ( 463 )   1 - 6   1999年11月 (   ISSN:0913-5685 )

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    本論文では、方向性結合半導体アンプを用いた波長変換器の動特性の解析について述べる。この解析のため開発したモデルは、時間依存伝達行列法に基づいて作られている。これを用いることで、デバイス内部のキャリアーとフォトンの密度、利得、屈折率、そして結合係数などの空間的な分布がわかる。シミュレーションの結果により、このデバイスは高速動作が可能であることと、相互利得変調を用いた波長変換器に比べて高消光比と低周波数チャープで動作することがわかる。

  • 方向性結合半導体アンプ型波長変換器の動特性解析

    馬 柄眞, 齋藤 真澄, 中野 義昭

    電子情報通信学会技術研究報告. OPE, 光エレクトロニクス   99 ( 465 )   1 - 6   1999年11月

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    本論文では、方向性結合半導体アンプを用いた波長変換器の動特性の解析について述べる。この解析のため開発したモデルは、時間依存伝達行列法に基づいて作られている。これを用いることで、デバイス内部のキャリアーとフォトンの密度、利得、屈折率、そして結合係数などの空間的な分布がわかる。シミュレーションの結果により、このデバイスは高速動作が可能であることと、相互利得変調を用いた波長変換器に比べて高消光比と低周波数チャープで動作することがわかる。

  • 方向性結合半導体アンプ型波長変換器の動特性解析

    馬 柄眞, 齋藤 真澄, 中野 義昭

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   99 ( 467 )   1 - 6   1999年11月

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    本論文では、方向性結合半導体アンプを用いた波長変換器の動特性の解析について述べる。この解析のため開発したモデルは、時間依存伝達行列法に基づいて作られている。これを用いることで、デバイス内部のキャリアーとフォトンの密度、利得、屈折率、そして結合係数などの空間的な分布がわかる。シミュレーションの結果により、このデバイスは高速動作が可能であることと、相互利得変調を用いた波長変換器に比べて高消光比と低周波数チャープで動作することがわかる。

  • 方向性結合半導体アンプ型波長変換器の動特性解析

    馬 炳眞, 齋藤 真澄, 中野 義昭

    電子情報通信学会技術研究報告   99 ( 467 )   1 - 6   1999年11月 (   ISSN:0913-5685 )

     詳細

    記述言語:英語   出版者・発行元:電子情報通信学会  

    本論文では、方向性結合半導体アンプを用いた波長変換器の動特性の解析について述べる。この解析のため開発したモデルは、時間依存伝達行列法に基づいて作られている。これを用いることで、デバイス内部のキャリアーとフォトンの密度、利得、屈折率、そして結合係数などの空間的な分布がわかる。シミュレーションの結果により、このデバイスは高速動作が可能であることと、相互利得変調を用いた波長変換器に比べて高消光比と低周波数チャープで動作することがわかる。

  • 波長割り当て光交換方式のIP網への適用に関する検討

    安井直彦, 中野義昭

    電子情報通信学会技術研究報告   99 ( 410(PS99 27-34) )   25 - 30   1999年11月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    波長割り当て光交換方式(WAPS)をIP網として用いる場合の実現形態として、半固定接続による方式とフロー毎に回線を張るカットスルー方式の双方を用意し、サービスによりそれらを使い分ける方式を提案する。さらに、特にカットスル一時問題となるWAPSにおけるパス設定時間について従来のルータを用いたIP網と比較し、WAPSによるカットスルー接続の適用領域を明らかにする。

  • 波長割り当て光交換方式のIP網への適用に関する検討

    安井直彦中野義昭, 中野 義昭

    電子情報通信学会技術研究報告. PS, 光スイッチング   99 ( 410 )   25 - 30   1999年11月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    波長割り当て光交換方式(WAPS)をIP網として用いる場合の実現形態として、半固定接続による方式とフロー毎に回線を張るカットスルー方式の双方を用意し、サービスによりそれらを使い分ける方式を提案する。さらに、特にカットスル一時問題となるWAPSにおけるパス設定時間について従来のルータを用いたIP網と比較し、WAPSによるカットスルー接続の適用領域を明らかにする。

  • All-Optical Bistability in Nonlinear Directional Coupler Loaded with Bragg Reflector

    NAKATSUHARA K., JEONG S. H., HSSAIN S., MIZUMOTO T., MA B. J., NAKANO Y.

    Extended abstracts of the ... Conference on Solid State Devices and Materials   1999   280 - 281   1999年9月

     詳細

    記述言語:英語  

  • CH4/H2/O2反応性イオンエッチングによるGaInAsP/InPウェハのテラス状加工

    鰐石卓志, 清水雅史, 桜井一正, 横井秀樹, 水本哲弥, 二口尚樹, 甲斐田憲明, 中野義昭

    応用物理学会学術講演会講演予稿集   60th ( 3 )   1134   1999年9月

     詳細

    記述言語:日本語  

  • GaInAsP/InP DFB導波路における全光AND動作実証

    築島幸男, JEONG S H, 中津原克己, 水本哲弥, MA B J, 中野義昭

    応用物理学会学術講演会講演予稿集   60th ( 3 )   1014   1999年9月

     詳細

    記述言語:日本語  

  • グレーティング装荷非線形方向性結合器における全光セット・リセット動作実証

    JEONG S H, 中津原克己, HOSSAIN S, 水本哲弥, MA B J, 中野義昭

    応用物理学会学術講演会講演予稿集   60th ( 3 )   1015   1999年9月

     詳細

    記述言語:日本語  

  • プリバイアス量子井戸によるMQW電界吸収型光変調器の偏光無依存化 (III)

    加藤正樹, 任田玲子, 中野義昭

    応用物理学会学術講演会講演予稿集   60th ( 3 )   1007   1999年9月

     詳細

    記述言語:日本語  

  • 選択MOVPE成長における膜厚測定からのIII族組成の決定

    二口尚樹, 高田泰彦, 中野義昭

    応用物理学会学術講演会講演予稿集   60th ( 1 )   243   1999年9月

     詳細

    記述言語:日本語  

  • 光シグナルによるゲイン増幅を利用した波長変換

    メイワー ドリュー N, アグラワル ゴビンド P, 中野 義紹

    電子情報通信学会技術研究報告. CPM, 電子部品・材料   99 ( 276 )   43 - 46   1999年8月 (   ISSN:0913-5685 )

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    波長変換に用いる半導体光アンプのゲインを増幅するために光シグナルを用いる率を述べる。光通信システムへの応用と異なった種類の波長変換について論じる。

  • 光シグナルによるゲイン増幅を利用した波長変換

    メイワー ドリュー N, アグラワル ゴビンド P, 中野 義紹

    電子情報通信学会技術研究報告. EMD, 機構デバイス   99 ( 274 )   43 - 46   1999年8月 (   ISSN:0913-5685 )

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    波長変換に用いる半導体光アンプのゲインを増幅するために光シグナルを用いる率を述べる。光通信システムへの応用と異なった種類の波長変換について論じる。

  • 光シグナルによるゲイン増幅を利用した波長変換

    メイワー ドリュー N, アグラワル ゴビンド P, 中野 義紹

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   99 ( 280 )   43 - 46   1999年8月 (   ISSN:0913-5685 )

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    波長変換に用いる半導体光アンプのゲインを増幅するために光シグナルを用いる率を述べる。光通信システムへの応用と異なった種類の波長変換について論じる。

  • 光シグナルによるゲイン増幅を利用した波長変換

    メイワー ドリュー N, アグラワル ゴビンド P, 中野 義紹

    電子情報通信学会技術研究報告. OPE, 光エレクトロニクス   99 ( 278 )   43 - 46   1999年8月 (   ISSN:0913-5685 )

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    波長変換に用いる半導体光アンプのゲインを増幅するために光シグナルを用いる率を述べる。光通信システムへの応用と異なった種類の波長変換について論じる。

  • 波長変換のための光誘起導波路の提案

    馬 烟眞, 中野 義昭

    電子情報通信学会技術研究報告. CPM, 電子部品・材料   99 ( 276 )   37 - 42   1999年8月 (   ISSN:0913-5685 )

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    信号regenerationとreshapingの機能を保有する全光波長変換器の実現にふさわしい光誘起導波路を提案する。光信号はデバイスのガイデイングとアンチガイデイングのスイッチングを起こす。伝達関数法を用いて光のパワーのみではなく、屈折率や光閉じ込め係数の空間的な分布の変化を調べることで、光誘起導波路のスイッチング特性を調べた。その結果、このデバイスは波長変換された出力信号の消光比が改善されることと、信号のreshapingが可能であり、デジタル波長変換に応用できることが分かった。

  • 波長変換のための光誘起導波路の提案

    馬 烟眞, 中野 義昭

    電子情報通信学会技術研究報告. OPE, 光エレクトロニクス   99 ( 278 )   37 - 42   1999年8月 (   ISSN:0913-5685 )

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    信号regenerationとreshapingの機能を保有する全光波長変換器の実現にふさわしい光誘起導波路を提案する。光信号はデバイスのガイデイングとアンチガイデイングのスイッチングを起こす。伝達関数法を用いて光のパワーのみではなく、屈折率や光閉じ込め係数の空間的な分布の変化を調べることで、光誘起導波路のスイッチング特性を調べた。その結果、このデバイスは波長変換された出力信号の消光比が改善されることと、信号のreshapingが可能であり、デジタル波長変換に応用できることが分かった。

  • 波長変換のための光誘起導波路の提案

    馬 烟眞, 中野 義昭

    電子情報通信学会技術研究報告. EMD, 機構デバイス   99 ( 274 )   37 - 42   1999年8月 (   ISSN:0913-5685 )

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    信号regenerationとreshapingの機能を保有する全光波長変換器の実現にふさわしい光誘起導波路を提案する。光信号はデバイスのガイデイングとアンチガイデイングのスイッチングを起こす。伝達関数法を用いて光のパワーのみではなく、屈折率や光閉じ込め係数の空間的な分布の変化を調べることで、光誘起導波路のスイッチング特性を調べた。その結果、このデバイスは波長変換された出力信号の消光比が改善されることと、信号のreshapingが可能であり、デジタル波長変換に応用できることが分かった。

  • 波長変換のための光誘起導波路の提案

    馬 烟眞, 中野 義昭

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   99 ( 280 )   37 - 42   1999年8月 (   ISSN:0913-5685 )

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    信号regenerationとreshapingの機能を保有する全光波長変換器の実現にふさわしい光誘起導波路を提案する。光信号はデバイスのガイデイングとアンチガイデイングのスイッチングを起こす。伝達関数法を用いて光のパワーのみではなく、屈折率や光閉じ込め係数の空間的な分布の変化を調べることで、光誘起導波路のスイッチング特性を調べた。その結果、このデバイスは波長変換された出力信号の消光比が改善されることと、信号のreshapingが可能であり、デジタル波長変換に応用できることが分かった。

  • 集積形光アイソレータを目指したダイレクトボンディングにおけるウェハ処理法

    横井秀樹, 水本哲弥, 清水雅史, 鰐石卓志, 二口尚樹, 甲斐田憲明, 中野義昭

    電子情報通信学会技術研究報告   99 ( 278(OPE99 54-68) )   1 - 6   1999年8月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    ニ枚の基板を接着剤を用いずに貼り合わせるダイレクトボンデイング技術を用いることにより、半導体を導波層とする集積形光アイソレータが製作可能となる。非相反移相効果を用いた光アイソレータを実現するために、GalnAsPとガーネット結晶のダイレクトボンディングについて研究を進めている。再現性良くダイレクトボンディングを実現するためのウェハ処理法について、接触角法により検討した結果について報告する。

  • 集積形光アイソレータを目指したダイレクトボンディングにおけるウェハ処理法

    横井 秀樹, 水本 哲弥, 清水 雅史, 鰐石 卓志, 二口 尚樹, 甲斐田 憲明, 中野 義昭

    電子情報通信学会技術研究報告. OPE, 光エレクトロニクス   99 ( 278 )   1 - 6   1999年8月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    ニ枚の基板を接着剤を用いずに貼り合わせるダイレクトボンデイング技術を用いることにより、半導体を導波層とする集積形光アイソレータが製作可能となる。非相反移相効果を用いた光アイソレータを実現するために、GalnAsPとガーネット結晶のダイレクトボンディングについて研究を進めている。再現性良くダイレクトボンディングを実現するためのウェハ処理法について、接触角法により検討した結果について報告する。

  • 集積形光アイソレータを目指したダイレクトボンディングにおけるウェハ処理法

    横井 秀樹, 水本 哲弥, 清水 雅史, 鰐石 卓志, 二口 尚樹, 甲斐田 憲明, 中野 義昭

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   99 ( 280 )   1 - 6   1999年8月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    ニ枚の基板を接着剤を用いずに貼り合わせるダイレクトボンデイング技術を用いることにより、半導体を導波層とする集積形光アイソレータが製作可能となる。非相反移相効果を用いた光アイソレータを実現するために、GalnAsPとガーネット結晶のダイレクトボンディングについて研究を進めている。再現性良くダイレクトボンディングを実現するためのウェハ処理法について、接触角法により検討した結果について報告する。

  • 集積形光アイソレータを目指したダイレクトボンディングにおけるウェハ処理法

    横井 秀樹, 水本 哲弥, 清水 雅史, 鰐石 卓志, 二口 尚樹, 甲斐田 憲明, 中野 義昭

    電子情報通信学会技術研究報告. EMD, 機構デバイス   99 ( 274 )   1 - 6   1999年8月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    ニ枚の基板を接着剤を用いずに貼り合わせるダイレクトボンデイング技術を用いることにより、半導体を導波層とする集積形光アイソレータが製作可能となる。非相反移相効果を用いた光アイソレータを実現するために、GalnAsPとガーネット結晶のダイレクトボンディングについて研究を進めている。再現性良くダイレクトボンディングを実現するためのウェハ処理法について、接触角法により検討した結果について報告する。

  • 集積形光アイソレータを目指したダイレクトボンディングにおけるウェハ処理法

    横井 秀樹, 水本 哲弥, 清水 雅史, 鰐石 卓志, 二口 尚樹, 甲斐田 憲明, 中野 義昭

    電子情報通信学会技術研究報告. CPM, 電子部品・材料   99 ( 276 )   1 - 6   1999年8月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    ニ枚の基板を接着剤を用いずに貼り合わせるダイレクトボンデイング技術を用いることにより、半導体を導波層とする集積形光アイソレータが製作可能となる。非相反移相効果を用いた光アイソレータを実現するために、GalnAsPとガーネット結晶のダイレクトボンディングについて研究を進めている。再現性良くダイレクトボンディングを実現するためのウェハ処理法について、接触角法により検討した結果について報告する。

  • C-3-101 2つの出力ポートを有する光双安定素子における全光set-reset動作実証

    中津原 克己, 水本 哲弥, ホセイン サイヌル, 鄭 錫煥, 馬 柄真, 中野 義昭

    電子情報通信学会ソサイエティ大会講演論文集   1999 ( 1 )   207 - 207   1999年8月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • 2つの出力ポートを有する光双安定素子における全光set‐reset動作実証

    中津原克己, 水本哲弥, HOSSAIN S, JEONG S H, MA B J, 中野義昭

    電子情報通信学会大会講演論文集   1999 ( 1 )   207 - 207   1999年8月 (   ISSN:1349-1369 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • C-4-23 伸張歪プリバイアス量子井戸による1.55μm帯MQW-EA変調器の広波長域偏光無依存動作

    加藤 正樹, 任田 玲子, 中野 義昭

    電子情報通信学会ソサイエティ大会講演論文集   1999 ( 1 )   251 - 251   1999年8月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • Analysis of GaInAsP surfaces by contact-angle measurement for wafer direct bonding with garnet crystals

    Hideki Yokoi, Tetsuya Mizumoto, Masafumi Shimizu, Takashi Waniishi, Naoki Futakuchi, Noriaki Kaida, Yoshiaki Nakano

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   38   4780 - 4783   1999年8月 (   ISSN:0021-4922 )

     詳細

    GaInAsP surfaces with various treatments were analyzed by contact-angle measurement for wafer direct bonding between GaInAsP and garnet crystals. The contact angle of a water droplet was measured to estimate the hydrophilicity of the wafer surfaces. The most hydrophilic surface was obtained after an O2 plasma activation process. Direct bonding was successfully achieved between GaInAsP activated by O2 plasma and garnet crystals. © 1999 Publication Board, Japanese Journal of Applied Physics.

    DOI: 10.1143/JJAP.38.4780

  • GaInAsPを用いたブラッグ反射器装荷非線形方向性結合器の全光学的セット・リセット動作

    鄭 錫煥, 中津原 克己, サイヌル ホセイン, 水本 哲弥, 馬 炳真, 中野 義昭

    電子情報通信学会技術研究報告. OFT, 光ファイバ応用技術   99 ( 245 )   7 - 12   1999年7月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    高速かつ大容量に情報処理を行うためには、CR定数の処理限界を受けない光制御形光スイッチが必要となる。ブラッグ反射器装荷非線形方向性結合器は入力ポートと空間的に分離された。2つの出力ポートを有し、全光学的なルーティングネットワークに応用できる。本研究では素子設計に関する重要なパラメータである方向性結合器に対するグレーティングの位置とグレーティングの結合係数について理論的に検討を行った。これに基づいて素子の試作を行い、試作素子において2出力間での全光学的スイッチング動作を実証したので、報告する。

  • GaInAsPを用いたブラッグ反射器装荷非線形方向性結合器の全光学的セット・リセット動作

    鄭 錫煥, 中津原 克己, サイヌル ホセイン, 水本 哲弥, 馬 炳真, 中野 義昭

    電子情報通信学会技術研究報告. PS, 光スイッチング   99 ( 243 )   7 - 12   1999年7月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    高速かつ大容量に情報処理を行うためには、CR定数の処理限界を受けない光制御形光スイッチが必要となる。ブラッグ反射器装荷非線形方向性結合器は入力ポートと空間的に分離された。2つの出力ポートを有し、全光学的なルーティングネットワークに応用できる。本研究では素子設計に関する重要なパラメータである方向性結合器に対するグレーティングの位置とグレーティングの結合係数について理論的に検討を行った。これに基づいて素子の試作を行い、試作素子において2出力間での全光学的スイッチング動作を実証したので、報告する。

  • GaInAsPを用いたブラッグ反射器装荷非線形方向性結合器の全光学的セット・リセット動作

    JEONG S‐H, 中津原克己, HOSSAIN S, 水本哲弥, MA B‐J, 中野義昭

    電子情報通信学会技術研究報告   99 ( 245(OFT99 9-17) )   7 - 12   1999年7月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語  

  • GaInAsPを用いたブラッグ反射器装荷非線形方向性結合器の全光学的セット・リセット動作

    鄭 錫煥, 中津原 克己, サイヌル ホセイン, 水本 哲弥, 馬 炳真, 中野 義昭

    電子情報通信学会技術研究報告. OCS, 光通信システム   99 ( 241 )   7 - 12   1999年7月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    高速かつ大容量に情報処理を行うためには、CR定数の処理限界を受けない光制御形光スイッチが必要となる。ブラッグ反射器装荷非線形方向性結合器は入力ポートと空間的に分離された。2つの出力ポートを有し、全光学的なルーティングネットワークに応用できる。本研究では素子設計に関する重要なパラメータである方向性結合器に対するグレーティングの位置とグレーティングの結合係数について理論的に検討を行った。これに基づいて素子の試作を行い、試作素子において2出力間での全光学的スイッチング動作を実証したので、報告する。

  • 空間分割光スイッチにおけるコヒーレント雑音に関する検討

    安井 直彦, 中野 義昭

    電子情報通信学会技術研究報告. OCS, 光通信システム   99 ( 241 )   13 - 18   1999年7月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    波長割り当て光ネットワーク (WAPN) ノードの光空間スイッチにおいて、漏話波の波長が信号波と等しいとし、且つ漏話波相互、及び信号波と漏話波の位相、および偏波については全く無相関として評価式を導出した。一例として、条件を以前にのモデルを全く同一として比較した。その結果ノードの損失への要求条件は変わらないが、漏話減衰量に関しては約10dB程度、要求が厳しくなることが判明した。

  • 空間分割光スイッチにおけるコヒーレント雑音に関する検討

    安井直彦, 中野義昭

    電子情報通信学会技術研究報告   99 ( 245(OFT99 9-17) )   13 - 18   1999年7月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語  

  • 空間分割光スイッチにおけるコヒーレント雑音に関する検討

    安井 直彦, 中野 義昭

    電子情報通信学会技術研究報告. OFT, 光ファイバ応用技術   99 ( 245 )   13 - 18   1999年7月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    波長割り当て光ネットワーク (WAPN) ノードの光空間スイッチにおいて、漏話波の波長が信号波と等しいとし、且つ漏話波相互、及び信号波と漏話波の位相、および偏波については全く無相関として評価式を導出した。一例として、条件を以前にのモデルを全く同一として比較した。その結果ノードの損失への要求条件は変わらないが、漏話減衰量に関しては約10dB程度、要求が厳しくなることが判明した。

  • 空間分割光スイッチにおけるコヒーレント雑音に関する検討

    安井 直彦, 中野 義昭

    電子情報通信学会技術研究報告. PS, 光スイッチング   99 ( 243 )   13 - 18   1999年7月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    波長割り当て光ネットワーク (WAPN) ノードの光空間スイッチにおいて、漏話波の波長が信号波と等しいとし、且つ漏話波相互、及び信号波と漏話波の位相、および偏波については全く無相関として評価式を導出した。一例として、条件を以前にのモデルを全く同一として比較した。その結果ノードの損失への要求条件は変わらないが、漏話減衰量に関しては約10dB程度、要求が厳しくなることが判明した。

  • 空間分割光スイッチにおけるコヒーレント雑音に関する検討

    安井 直彦, 中野 義昭

    電子情報通信学会技術研究報告   99 ( 245 )   13 - 18   1999年7月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:電子情報通信学会  

  • InGaAs/InAlAs伸張歪プリバイアス量子井戸によるMQW‐EA変調器の広波長域偏光無依存動作

    加藤正樹, 任田玲子, 中野義昭

    電子情報通信学会技術研究報告   99 ( 39(OPE99 1-12) )   63 - 68   1999年5月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    1.55μm波長帯におけるInGaAs/InAlAs多重量子井戸電界吸収型光変調器(MQW-EA変調器)の偏光無依存動作波長範囲の拡大について、検討を行った。伸張歪量子井戸とプリバイアス量子井戸(矩形量子井戸の片側の端付近に薄い障壁層を設けただけの最もシンプルな変調ポテンシャル量子井戸)とを併用することにより、1.51μmから1.57μmの60nmの波長範囲にわたり偏光無依存動作が実現できた。

  • InGaAs/InAlAs伸張歪プリバイアス量子井戸によるMQW-EA変調器の広波長域偏光無依存動作

    加藤 正樹, 任田 玲子, 中野 義昭

    電子情報通信学会技術研究報告. OPE, 光エレクトロニクス   99 ( 39 )   63 - 68   1999年5月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    1.55μm波長帯におけるInGaAs/InAlAs多重量子井戸電界吸収型光変調器(MQW-EA変調器)の偏光無依存動作波長範囲の拡大について、検討を行った。伸張歪量子井戸とプリバイアス量子井戸(矩形量子井戸の片側の端付近に薄い障壁層を設けただけの最もシンプルな変調ポテンシャル量子井戸)とを併用することにより、1.51μmから1.57μmの60nmの波長範囲にわたり偏光無依存動作が実現できた。

  • ダイレクトボンディングにより製作される半導体基板上集積形光アイソレータ

    横井秀樹, 水本哲弥, 新城伸大, 二口尚樹, 甲斐田憲明, 中野義昭

    電子情報通信学会技術研究報告   99 ( 39(OPE99 1-12) )   69 - 74   1999年5月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    二枚の基板を接着剤を用いずに貼り合わせるダイレクトボンディング技術を用いることにより、半導体を導波層とする集積形光アイソレータが製作可能となる。非相反移相効果を用いた光アイソレータを実現するために、GalnAsPとガーネット結晶のダイレクトボンディンダについて研究を進めている。半導体導波層を有する集積形光アイソレータについて述べるとともに、GalnAsPとガーネット結晶のダイレクトボンディングの実験結果について併せて報告する。

  • ダイレクトボンディングにより製作される半導体基板上集積形光アイソレータ

    横井 秀樹, 水本 哲弥, 新城 伸大, 二口 尚樹, 甲斐田 憲明, 中野 義昭

    電子情報通信学会技術研究報告. OPE, 光エレクトロニクス   99 ( 39 )   69 - 74   1999年5月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    二枚の基板を接着剤を用いずに貼り合わせるダイレクトボンディング技術を用いることにより、半導体を導波層とする集積形光アイソレータが製作可能となる。非相反移相効果を用いた光アイソレータを実現するために、GalnAsPとガーネット結晶のダイレクトボンディンダについて研究を進めている。半導体導波層を有する集積形光アイソレータについて述べるとともに、GalnAsPとガーネット結晶のダイレクトボンディングの実験結果について併せて報告する。

  • 変調ポテンシャル多重量子井戸を用いた電界吸収型光変調器の高光入力下における吸収飽和の解析

    任田 玲子, 加藤 正樹, 中野 義昭

    電子情報通信学会技術研究報告. PS, 光スイッチング   99 ( 17 )   1 - 6   1999年4月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    半導体多重量子井戸電界吸収型 (MQW-EA) 光変調器の高光入力下における吸収飽和はMQW-EA光変調器の使用条件の上限を決める一つの要因であり、光入力耐性の改善が切望されている。我々は、変調ポテンシャル量子井戸を用いたMQW-EA光変調器の高光入力下における吸収飽和について解析を行った。具体的には、光を入射したときの光変調器内の電界分布を、吸収係数の電界依存性、キャリア掃出時間の電界依存性を解析することで求め、各量子井戸の光吸収を評価した。シミュレーションの結果、高光入力下における吸収飽和はその動作電界を制御することによって緩和できる可能性があることがわかった。

  • 変調ポテンシャル多重量子井戸を用いた電界吸収型光変調器の高光入力下における吸収飽和の解析

    任田 玲子, 加藤 正樹, 中野 義昭

    電子情報通信学会技術研究報告. PS, 光スイッチング   99 ( 17 )   1 - 6   1999年4月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:電子情報通信学会  

    半導体多重量子井戸電界吸収型 (MQW-EA) 光変調器の高光入力下における吸収飽和はMQW-EA光変調器の使用条件の上限を決める一つの要因であり、光入力耐性の改善が切望されている。我々は、変調ポテンシャル量子井戸を用いたMQW-EA光変調器の高光入力下における吸収飽和について解析を行った。具体的には、光を入射したときの光変調器内の電界分布を、吸収係数の電界依存性、キャリア掃出時間の電界依存性を解析することで求め、各量子井戸の光吸収を評価した。シミュレーションの結果、高光入力下における吸収飽和はその動作電界を制御することによって緩和できる可能性があることがわかった。

  • 変調ポテンシャル多重量子井戸を用いた電界吸収型光変調器の高光入力下における吸収飽和の解析

    任田玲子, 加藤正樹, 中野義昭

    電子情報通信学会技術研究報告   99 ( 17(PS99 1-5) )   1 - 6   1999年4月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    半導体多重量子井戸電界吸収型 (MQW-EA) 光変調器の高光入力下における吸収飽和はMQW-EA光変調器の使用条件の上限を決める一つの要因であり、光入力耐性の改善が切望されている。我々は、変調ポテンシャル量子井戸を用いたMQW-EA光変調器の高光入力下における吸収飽和について解析を行った。具体的には、光を入射したときの光変調器内の電界分布を、吸収係数の電界依存性、キャリア掃出時間の電界依存性を解析することで求め、各量子井戸の光吸収を評価した。シミュレーションの結果、高光入力下における吸収飽和はその動作電界を制御することによって緩和できる可能性があることがわかった。

  • 有機金属気相拡散選択エピタキシによるInP系光アンプゲートスイッチの試作

    甲斐田憲明, 中野義昭

    電子情報通信学会技術研究報告   99 ( 17(PS99 1-5) )   7 - 12   1999年4月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    新しい選択成長モードである有機金属気相拡散選択エピタキシにより, 1×2の多モード干渉型カプラと半導体光増幅器をモノリシックに集積し, InP系光アンプゲートスイッチを作製することに成功した. デバイスの導波構造には, 選択成長で自己形成されるメサを用いているため, その上面および側面は非常に平滑で, 導波特性は良好であった. スイッチとしての消光比は, 300mAの電流注入で11.8dBが得られた. 二つの出カポート間での特性の違いは見られなかった.

  • 有機金属気相拡散選択エピタキシによるInP系光アンプゲートスイッチの試作

    甲斐田 憲明, 中野 義昭

    電子情報通信学会技術研究報告. PS, 光スイッチング   99 ( 17 )   7 - 12   1999年4月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:電子情報通信学会  

  • 有機金属気相拡散選択エピタキシによるInP系光アンプゲートスイッチの試作

    甲斐田 憲明, 中野 義昭

    電子情報通信学会技術研究報告. PS, 光スイッチング   99 ( 17 )   7 - 12   1999年4月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    新しい選択成長モードである有機金属気相拡散選択エピタキシにより, 1×2の多モード干渉型カプラと半導体光増幅器をモノリシックに集積し, InP系光アンプゲートスイッチを作製することに成功した. デバイスの導波構造には, 選択成長で自己形成されるメサを用いているため, その上面および側面は非常に平滑で, 導波特性は良好であった. スイッチとしての消光比は, 300mAの電流注入で11.8dBが得られた. 二つの出カポート間での特性の違いは見られなかった.

  • CH4・H2・Ar/O2交互供給によるInPのECR反応性イオンビームエッチング

    鈴木達也, 多田邦雄, 杉山正和, 霜垣幸浩, 中野義昭

    応用物理学関係連合講演会講演予稿集   46th ( 3 )   1380   1999年3月

     詳細

    記述言語:日本語  

  • InGaAs/InP MOVE2選択成長におけるストライプ方向がメサ形状に与える影響

    甲斐田憲明, 中野義昭

    応用物理学関係連合講演会講演予稿集   46th ( 1 )   352   1999年3月

     詳細

    記述言語:日本語  

  • InP横型MOVPEにおけるリアクタ全体の流れ方向成長速度・膜質分布の解析 (3)

    ASAWAMETHAPANT W, 杉山正和, 霜垣幸浩, 中野義昭

    応用物理学関係連合講演会講演予稿集   46th ( 1 )   347   1999年3月

     詳細

    記述言語:日本語  

  • InP/InGaAs/InP界面作製シーケンスの違いが界面構造に及ぼす影響のX線CTR散乱法による解析

    高橋隆造, 平山啓介, 荒木宗貴, 田淵雅夫, 二口尚樹, 霜垣幸浩, 中野義昭, 竹田美和

    応用物理学関係連合講演会講演予稿集   46th ( 1 )   349   1999年3月

     詳細

    記述言語:日本語  

  • WDM用半導体光源・波長変換デバイス

    中野義昭

    応用物理学関係連合講演会講演予稿集   46th ( 0 )   76   1999年3月

     詳細

    記述言語:日本語  

  • マストランスポート法で作製されたInAsP/InP分布帰還型歪み量子細線レーザの室温発振

    戸田知朗, 中野義昭

    応用物理学関係連合講演会講演予稿集   46th ( 3 )   1189   1999年3月

     詳細

    記述言語:日本語  

  • マストランスポートによるInP基板上GaInAsP V溝内へのInAsP量子細線の作製と評価

    戸田知朗, 中野義昭

    応用物理学関係連合講演会講演予稿集   46th ( 1 )   533   1999年3月

     詳細

    記述言語:日本語  

  • マストランスポートによるInP基板上GaInAsP V溝内へのInAsP量子細線の作製と評価

    戸田知朗, 中野義昭

    応用物理学関係連合講演会講演予稿集   46th ( 3 )   1461   1999年3月

     詳細

    記述言語:日本語  

  • 半導体導波路型光アイソレータの提案

    竹中充, 中野義昭

    応用物理学関係連合講演会講演予稿集   46th ( 3 )   1219   1999年3月

     詳細

    記述言語:日本語  

  • 狭い量子井戸の無秩序化による分布帰還型半導体レーザの発振波長トリミング (II) トリミング量の改善

    井上大介, 中野義昭

    応用物理学関係連合講演会講演予稿集   46th ( 3 )   1190   1999年3月

     詳細

    記述言語:日本語  

  • C-3-27 Optimized Grating Position in NLDC with Bragg Reflector

    Hossain S., Nakatsuhara K., Mizumoto T., Jeong S.H., Tsukishima Y., Ma B. J., Nakano Y.

    電子情報通信学会総合大会講演論文集   1999 ( 1 )   181 - 181   1999年3月

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    We have analytically and experimentally demonstrated that maximization of the reflection in NLDC with Bragg-reflector can be achieved by locating the grating in the optimized position.

  • マストランスポートによる1.5μm 帯InAsP/InP歪み量子細線DFBレーザの室温動作

    戸田 知朗, 中野 義昭

    電子情報通信学会総合大会講演論文集   1999 ( 1 )   331 - 332   1999年3月

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

  • 方向性結合半導体光アンプに基づく全光波長変換器の作製

    馬 炳真, 中野 義昭

    電子情報通信学会総合大会講演論文集   1999 ( 1 )   413 - 414   1999年3月

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

  • 磁気光学素子集積化のためのダイレクトボンディング

    水本哲弥, 横井秀樹, 清水雅史, 中野義昭

    エレクトロニクス実装学術講演大会講演論文集   13th   47 - 48   1999年3月 (   ISSN:1346-2199 )

     詳細

    記述言語:日本語  

  • Switching Node Consideration from the Aspect of Transmission Characteristics in Wavelength Assignment Photonic Network (WAPN)

    YASUI Tadahiko, NAKANO Yoshiaki

    IEICE transactions on communications   82 ( 2 )   306 - 316   1999年2月 (   ISSN:0916-8516 )

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    By adopting a network architecture in which not only a calling but also a called terminal can select a wavelength, a novel WDM network becomes possible. This we call Wavelength Assignment Photonic Network (WAPN). In this network wavelengths are a kind of network resources and according to requests from terminals, wavelengths are allocated or assigned to calls. In the system a wavelength used for a call is to be used for another call after the call is terminated. By supplying wavelengths to the home, a bitrate-free, protocol free or even transmission method free network can be realized. In this paper, from a viewpoint of S/N or Q factor, WAPN is evaluated with special focus on the node architecture -i.e., from the viewpoint of node size, number of switching stages, crosstalk level, and losses, because the allowable node size is the crucial issue to decide the whole network capacity. After brief explanations of this proposed system, the model for system evaluations will be established and a node system is to be evaluated for some practical parameter values considering especially traffic characteristics of a node. As a result of this study a node system with capacity more than 100 thousands erl (about 20 Tbps throughput) can be constructed using present available technologies, which will enable us to construct large WAPN network with radius of 2,000 km and subscribers of about 50 millions.

  • Switching Node Consideration from the Aspect of Transmission Characteristics in Wavelength Assigment Photonic Network (WAPN)

    YASUI Tadahiko, NAKANO Yoshiaki

    IEICE transactions on electronics   82 ( 2 )   254 - 264   1999年2月 (   ISSN:0916-8524 )

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    By adopting a network architecture in which not only a calling but also a called terminal can select a wavelength, a novel WDM network becomes possible. This we call Wavelength Assignment Photonic Network (WAPN). In this network wavelengths are a kind of network resources and according to requests from terminals, wavelengths are allocated or assigned to calls. In the system a wavelength used for a call is to be used for another call after the call is terminated. By supplying wavelengths to the home, a bitrate-free, protocol free or even transmission method free network can be realized. In this paper, from a viewpoint of S/N or Q factor, WAPN is evaluated with special focus on the node architectrure-i.e., from the viewpoint of node size, number of switching stages, crosstalk level, and losses, because the allowable node size is the crucial issue to decide the whole network capacity. After brief explanations of this proposed system, the model for system evaluations will be established and a node system is to be evaluated for some practical parameter valucs considering especially traffic characteristics of a node. As a result of this stydy a node system with capacity more then 100 thousands erl (about 20 Tbps throughput) can be constructed using present available technologies, which will enable us to construct large WAPN network with redius of 2,000 km and subscribers of about 50 millions.

  • 非線形DFB導波路における全光学的スイッチング

    中津原克己, 水本哲弥, 中野義昭, MA B‐J

    映像情報メディア学会技術報告   23 ( 12(ROFT99 37-40) )   19 - 24   1999年2月 (   ISSN:1342-6893 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人映像情報メディア学会  

    The nonlinear DFB waveguides that employ an optical Kerr effect play an important role in future optical signal processing and communication systems, e.g., an optical memory and an optical logic gate. In this paper, all-optical set-reset and threshold operation in the fabricated device at wavelength 1.55 μm are reviewed.

    DOI: 10.11485/itetr.23.12.0_19

  • 非線形DFB導波路における全光学的スイッチング

    中津原 克己, 水本 哲弥, 馬 炳真, 中野 義昭

    映像情報メディア学会技術報告   23 ( 12 )   19 - 24   1999年2月 (   ISSN:1342-6893 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人映像情報メディア学会  

    The nonlinear DFB waveguides that employ an optical Kerr effect play an important role in future optical signal processing and communication systems, e.g., an optical memory and an optical logic gate. In this paper, all-optical set-reset and threshold operation in the fabricated device at wavelength 1.55 μm are reviewed.

    DOI: 10.11485/itetr.23.12.0_19

  • チャープトグレーティングDFBアンプによる光スイッチングとメモリ

    メイワー ドリュー・N, アグラワル ゴビンド・P, 中野 義昭

    電気学会研究会資料. : The Papers of Technical Meeting on Electromagnetic Theory, IEE Japan. EMT, 電磁界理論研究会   1999 ( 17 )   19 - 24   1999年1月

     詳細

    記述言語:英語  

  • チャープトグレーティングDFBアンプによる光スイッチングとメモリ

    メイワー ドリュー・N, アグラワル ゴビンド・P, 中野 義昭

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   98 ( 510 )   19 - 24   1999年1月

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    DFB型半導体光アンプの双安定動作におけるチャープトグレーティングの効果について論じる。シミュレーションによれば、グレーティング周期に0.2%の線形的な変化を加えるだけでデバイスは0.1mW以下のスイッチング光パワーで12.5GHzのスペクトル範囲に渡り、同形のヒステリシスを見せるようになることがわかった。それより狭いスペクトル範囲でよい場合には、30dB以上の利得や、マイクロワット以下のスイッチングパワーの得られることが予測された。以上の特性改善が光メモリや光スイッチングにどのように適用できるかについても論じる。

  • チャープトグレーティングDFBアンプによる光スイッチングとメモリ

    メイワー ドリュー・N, アグラワル ゴビンド・P, 中野 義昭

    電子情報通信学会技術研究報告. OPE, 光エレクトロニクス   98 ( 508 )   19 - 24   1999年1月

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    DFB型半導体光アンプの双安定動作におけるチャープトグレーティングの効果について論じる。シミュレーションによれば、グレーティング周期に0.2%の線形的な変化を加えるだけでデバイスは0.1mW以下のスイッチング光パワーで12.5GHzのスペクトル範囲に渡り、同形のヒステリシスを見せるようになることがわかった。それより狭いスペクトル範囲でよい場合には、30dB以上の利得や、マイクロワット以下のスイッチングパワーの得られることが予測された。以上の特性改善が光メモリや光スイッチングにどのように適用できるかについても論じる。

  • チャープトグレーティングDFBアンプによる光スイッチングとメモリ

    ドリュー メイワー N, ゴビンド アグラワル P, 中野 義昭

    電子情報通信学会技術研究報告. PS, 光スイッチング   98 ( 506 )   19 - 24   1999年1月

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    DFB型半導体光アンプの双安定動作におけるチャープトグレーティングの効果について論じる。シミュレーションによれば、グレーティング周期に0.2%の線形的な変化を加えるだけでデバイスは、0.1 mW以下のスイッチング光パワーで12.5GHzのスペクトル範囲に渡り、同形のヒステリシスを見せるようになることがわかった。それより狭いスペクトル範囲でよい場合には、30 dB以上の利得や、マイクロワット以下のスイッチングパワーの得られることが予想された。以上の特性改善が光メモリや光スイッチングにどのように適用できるかについても論じる。

  • Direct bonding between quaternary compound semiconductor and garnet crystals for integrated optical isolator

    Hideki Yokoi, Tetsuya Mizumoto, Masafumi Shimizu, Naoki Futakuchi, Noriaki Kaida, Yoshiaki Nakano

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   38   195 - 197   1999年1月 (   ISSN:0021-4922 )

     詳細

    An integrated optical isolator employing a nonreciprocal phase shift is very attractive because it does not need phase matching. We have investigated a novel configuration of the integrated optical isolator, employing the nonreciprocal phase shift, in which the magnetooptic waveguide has a magnetic garnet/GalnAsP/InP structure. The wafer direct bonding technique is necessary to realize this structure. The direct bonding between quaternary III-V compound semiconductors and garnet crystals was experimentally studied. The bonding was achieved by chemical treatment and subsequent heat treatment at temperatures ranging from 110 to 330°C. Cross-sectional scanning electron microscope (SEM) images indicated that there were no gaps between the two wafers in contact. ©1999 Publication Board, Japanese Journal of Applied Physics.

    DOI: 10.1143/JJAP.38.195

  • 光実装技術の将来展望-夢(「絵解き・光実装技術入門」第 6 回・最終回)

    桂 浩輔, 清水 健男, 辻 伸二, 中野 義昭, 三上 修

    エレクトロニクス実装学会誌   2 ( 2 )   154 - 156   1999年 (   ISSN:1884-121X )

     詳細

    記述言語:英語   出版者・発行元:社団法人エレクトロニクス実装学会  

    DOI: 10.5104/jiep.2.154

  • 光実装技術 1 電気と比較した光実装の特質と課題 (光産業技術振興協会S)

    中野義昭

    光デバイス実装技術調査委員会報告書 平成11年   3 - 9   1999年

     詳細

    記述言語:日本語  

  • 波長割り当て光ネットワーク(WAPN)の検討 その2. 光ノード構成

    安井直彦, 中野義昭

    電子情報通信学会技術研究報告   98 ( 481(PS98 55-65) )   37 - 42   1998年12月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    波長割り当て光ネットワーク(WAPN)は、光-電気、電気-光変換を行わずエンドエンドで光信号を送受し、かつ、スイッチングノードも含む波長多重技術を用いた全光ネットワークである。本論文では、既に求められているQ値評価式に基づき、伝送特性上からWAPNの実現性を評価した。直径2000Km、加入数5000万、2階層構成の光ネットワークを想定した時のノードの通話路に与えられる許容損失、許容漏話量から光空間分割スイッチを用いての実現が可能であることを明らかにする。本検討の条件で20Tbpsのスループットを持つ光ノード実現が可能である。

  • 波長割り当て光ネットワーク(WAPN)の検討 : その2.光ノード構成

    安井 直彦, 中野 義昭

    電子情報通信学会技術研究報告. SSE, 交換システム   98 ( 479 )   37 - 42   1998年12月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    波長割り当て光ネットワーク(WAPN)は、光-電気、電気-光変換を行わずエンドエンドで光信号を送受し、かつ、スイッチングノードも含む波長多重技術を用いた全光ネットワークである。本論文では、既に求められているQ値評価式に基づき、伝送特性上からWAPNの実現性を評価した。直径2000Km、加入数5000万、2階層構成の光ネットワークを想定した時のノードの通話路に与えられる許容損失、許容漏話量から光空間分割スイッチを用いての実現が可能であることを明らかにする。本検討の条件で20Tbpsのスループットを持つ光ノード実現が可能である。

  • 波長割り当て光ネットワーク(WAPN)の検討 : その2.光ノード構成

    安井 直彦, 中野 義昭

    電子情報通信学会技術研究報告. PS, 光スイッチング   98 ( 481 )   37 - 42   1998年12月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    波長割り当て光ネットワーク(WAPN)は、光-電気、電気-光変換を行わずエンドエンドで光信号を送受し、かつ、スイッチングノードも含む波長多重技術を用いた全光ネットワークである。本論文では、既に求められているQ値評価式に基づき、伝送特性上からWAPNの実現性を評価した。直径2000Km、加入数5000万、2階層構成の光ネットワークを想定した時のノードの通話路に与えられる許容損失、許容漏話量から光空間分割スイッチを用いての実現が可能であることを明らかにする。本検討の条件で20Tbpsのスループットを持つ光ノード実現が可能である。

  • マストランスポートによるInAsP量子細線の作製と光学特性評価

    戸田知朗, 中野義昭

    電子情報通信学会技術研究報告   98 ( 412(OCS98 67-76) )   55 - 60   1998年11月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    MOVPEに基づくマストランスポート法を用いInP基板V溝上にInAsP量子細線を作製することに成功した。量子細線のサイズはマストランスポートを行う温度によって制御可能であり、それとは独立に歪み及び細線の組成はマストランスポート中のV族雰囲気の組成で制御可能である。作製された量子細線はバリアとの強い格子不整合にも関わらず転移はの全くない良好な界面を有し、従来のV溝による作製法とは異なり余計な寄生構造を持たない特長をもつ。PLは室温においても強い発光を観測し量子細線の品質を裏付けている。また量子細線に固有の発光強度の偏波依存性も見られTEMによる観測と合わせてキャリアの有効な閉じ込めが推察できた。

  • マストランスポートによるInAsP量子細線と作製と光学特性評価

    戸田 知朗, 中野 義昭

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   98 ( 418 )   55 - 60   1998年11月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    MOVPEに基づくマストランスポート法を用いInP基板V溝上にInAsP量子細線を作製することに成功した。量子細線のサイズはマストランスポートを行う温度によって制御可能であり、それとは独立に歪み及び細線の組成はマストランスポート中のV族雰囲気の組成で制御可能である。作製された量子細線はバリアとの強い格子不整合にも関わらず転移はの全くない良好な界面を有し、従来のV溝による作製法とは異なり余計な寄生構造を持たない特長をもつ。PLは室温においても強い発光を観測し量子細線の品質を裏付けている。また量子細線に固有の発光強度の偏波依存性も見られTEMによる観測と合わせてキャリアの有効な閉じ込めが推察できた。

  • マストランスポートによるInAsP量子細線の作製と光学特性評価

    戸田 知朗, 中野 義昭

    電子情報通信学会技術研究報告. OPE, 光エレクトロニクス   98 ( 416 )   55 - 60   1998年11月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    MOVPEに基づくマストランスポート法を用いInP基板V溝上にInAsP量子細線を作製することに成功した。量子細線のサイズはマストランスポートを行う温度によって制御可能であり、それとは独立に歪み及び細線の組成はマストランスポート中のV族雰囲気の組成で制御可能である。作製された量子細線はバリアとの強い格子不整合にも関わらず転移はの全くない良好な界面を有し、従来のV溝による作製法とは異なり余計な寄生構造を持たない特長をもつ。PLは室温においても強い発光を観測し量子細線の品質を裏付けている。また量子細線に固有の発光強度の偏波依存性も見られTEMによる観測と合わせてキャリアの有効な閉じ込めが推察できた。

  • マストランスポートによるInAsP量子細線の作製と光学特性評価

    戸田 知朗, 中野 義昭

    電子情報通信学会技術研究報告. OCS, 光通信システム   98 ( 412 )   55 - 60   1998年11月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    MOVPEに基づくマストランスポート法を用いInP基板V溝上にInAsP量子細線を作製することに成功した。量子細線のサイズはマストランスポートを行う温度によって制御可能であり、それとは独立に歪み及び細線の組成はマストランスポート中のV族雰囲気の組成で制御可能である。作製された量子細線はバリアとの強い格子不整合にも関わらず転移はの全くない良好な界面を有し、従来のV溝による作製法とは異なり余計な寄生構造を持たない特長をもつ。PLは室温においても強い発光を観測し量子細線の品質を裏付けている。また量子細線に固有の発光強度の偏波依存性も見られTEMによる観測と合わせてキャリアの有効な閉じ込めが推察できた。

  • マストランスポートによるInAsP量子細線の作製と光学特性評価

    戸田 知朗, 中野 義昭

    電子情報通信学会技術研究報告. ED, 電子デバイス   98 ( 414 )   55 - 60   1998年11月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    MOVPEに基づくマストランスポート法を用いInP基板V溝上にInAsP量子細線を作製することに成功した。量子細線のサイズはマストランスポートを行う温度によって制御可能であり、それとは独立に歪み及び細線の組成はマストランスポート中のV族雰囲気の組成で制御可能である。作製された量子細線はバリアとの強い格子不整合にも関わらず転移はの全くない良好な界面を有し、従来のV溝による作製法とは異なり余計な寄生構造を持たない特長をもつ。PLは室温においても強い発光を観測し量子細線の品質を裏付けている。また量子細線に固有の発光強度の偏波依存性も見られTEMによる観測と合わせてキャリアの有効な閉じ込めが推察できた。

  • 変調ポテンシャル量子井戸による偏光無依存MQW‐EA変調器の動作波長範囲拡大

    加藤正樹, 任田玲子, 中野義昭

    電子情報通信学会技術研究報告   98 ( 362(PS98 28-38) )   49 - 54   1998年10月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    1.55μm波長帯におけるInGaAs/InAlAs多重量子井戸電界吸収型光変調器(MQW-EA変調器)の偏光無依存動作波長範囲の拡大について、検討を行った。伸張歪量子井戸と変調ポテンシャル量子井戸の併用が効果的であり、矩形量子井戸の片側の端付近に薄い障壁層を設けただけの最もシンプルな変調ポテンシャル量子井戸(プリバイアス量子井戸)において、理論計算および光吸収電流測定により偏光無依存動作波長範囲拡大の見通しが得られた。

  • 変調ポテンシャル量子井戸による偏光無依存MQW-EA変調器の動作波長範囲拡大

    加藤 正樹, 任田 玲子, 中野 義昭

    電子情報通信学会技術研究報告. PS, 光スイッチング   98 ( 362 )   49 - 54   1998年10月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    1.55μm波長帯におけるInGaAs/InAlAs多重量子井戸電界吸収型光変調器(MQW-EA変調器)の偏光無依存動作波長範囲の拡大について、検討を行った。伸張歪量子井戸と変調ポテンシャル量子井戸の併用が効果的であり、矩形量子井戸の片側の端付近に薄い障壁層を設けただけの最もシンプルな変調ポテンシャル量子井戸(プリバイアス量子井戸)において、理論計算および光吸収電流測定により偏光無依存動作波長範囲拡大の見通しが得られた。

  • 波長割り当て光ネットワーク(WAPN)の検討 その1. 光ネットワーク評価式の導出

    安井直彦, 中野義昭

    電子情報通信学会技術研究報告   98 ( 362(PS98 28-38) )   19 - 24   1998年10月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    波長割り当て光ネットワーク(WAPN)は、光-電気、電気-光変換を行わずエンドエンドで光信号を送受し、かつ、スイッチングノードも含む波長多重技術を用いた全光ネットワークである。このネットワークの伝送特性上からの評価し実現性を検討するため、{(光損失+それへの漏話)+(光増幅器の依る利得+ASE)}で構成される1つのセクションを構成要素と考え、光ネットワークがこのセクションの多段縦続接続で構成されるものとして、Q値、あるいは伝送誤り率を求める一般式を導出する。

  • 波長割り当て光ネットワーク(WAPN)の検討 : その1.光ネットワーク評価式の導出

    安井 直彦, 中野 義昭

    電子情報通信学会技術研究報告. PS, 光スイッチング   98 ( 362 )   19 - 24   1998年10月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    波長割り当て光ネットワーク(WAPN)は、光-電気、電気-光変換を行わずエンドエンドで光信号を送受し、かつ、スイッチングノードも含む波長多重技術を用いた全光ネットワークである。このネットワークの伝送特性上からの評価し実現性を検討するため、{(光損失+それへの漏話)+(光増幅器の依る利得+ASE)}で構成される1つのセクションを構成要素と考え、光ネットワークがこのセクションの多段縦続接続で構成されるものとして、Q値、あるいは伝送誤り率を求める一般式を導出する。

  • GaInAsP-DFB導波路とファイバカプラを用いた全光学的AND動作

    中津原 克己, 水本 哲弥, ホセイン サイヌル, 朴 己煥, 鄭 錫煥, 馬 炳真, 中野 義昭

    電子情報通信学会ソサイエティ大会講演論文集   1998 ( 1 )   251 - 251   1998年9月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • 光誘起量子井戸無秩序化によるDFBレーザの発振波長トリミング

    中野 義昭, 井上 大介

    電子情報通信学会ソサイエティ大会講演論文集   1998 ( 1 )   427 - 428   1998年9月

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

  • 利得結合分布帰還型レーザにおけるアナログ変調歪み低減効果

    二口 尚樹, 田口 智之, 中野 義昭

    電子情報通信学会ソサイエティ大会講演論文集   1998 ( 1 )   317 - 317   1998年9月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • 非相反移相効果を用いた光アイソレータのためのテーパ状3分岐光結合器の結合特性

    横井 秀樹, 水本 哲弥, 新城 伸大, 鄭 錫煥, 二口 尚樹, 甲斐田 憲明, 中野 義昭

    電子情報通信学会ソサイエティ大会講演論文集   1998 ( 1 )   258 - 258   1998年9月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • Al‐free系材料を用いた0.9μm帯SLD

    LIANG J‐H, 小川芳宏, 館林潤, 丸山剛, 中野義昭

    応用物理学会学術講演会講演予稿集   59th ( 3 )   992   1998年9月

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    記述言語:日本語  

  • CH4・H2・Ar/O2交互供給を用いたInPのECR反応性イオンビームエッチング

    長田俊彦, 杉山正和, 霜垣幸浩, 中野義昭

    応用物理学会学術講演会講演予稿集   59th ( 3 )   1176   1998年9月

     詳細

    記述言語:日本語  

  • GaInAsP‐DFB導波路を用いた全光学的AND動作

    中津原克己, 水本哲称, HOSSAIN S, PARK P H, JEONG S H, MA B J, 中野義昭

    応用物理学会学術講演会講演予稿集   59th ( 3 )   1045   1998年9月

     詳細

    記述言語:日本語  

  • GaInAsP‐DFB導波路とファイバカプラを用いた全光学的AND動作

    中津原克己, 水本哲弥, HOSSAIN S, PARK K H, JEONG S H, MA B J, 中野義昭

    電子情報通信学会大会講演論文集   1998   251   1998年9月 (   ISSN:1349-1369 )

     詳細

    記述言語:日本語  

  • MOVPEリアクター全体の流れ方向成長速度・膜質分布の解析 (2)

    ASAWAMETHAPANT W, 杉山正和, 霜垣幸浩, 中野義昭

    応用物理学会学術講演会講演予稿集   59th ( 1 )   278   1998年9月

     詳細

    記述言語:日本語  

  • SiO:F膜プラズマCVD合成の反応機構

    霜垣幸浩, 中野義昭, 多田邦雄, 小宮山宏

    東京大学工学部総合試験所年報   57 ( 57 )   161 - 164   1998年9月 (   ISSN:0371-3067 )

     詳細

    記述言語:日本語   出版者・発行元:東京大学工学部総合試験所  

  • ドライ‐ウェット複合エッチングによる横結合型歪MQW‐DFBリッジレーザの作製

    渡部義昭, 武井清, CHEN N, 竹間清文, 二口尚樹, 中野義昭

    応用物理学会学術講演会講演予稿集   59th ( 3 )   999   1998年9月

     詳細

    記述言語:日本語  

  • SiO:F膜プラズマCVD合成の反応機構

    霜垣 幸浩, 林 相佑, 中野 義昭

    東京大学工学部総合試験所年報   ( 57 )   161 - 164   1998年9月 (   ISSN:0371-3067 )

     詳細

    記述言語:日本語   出版者・発行元:東京大学工学部総合試験所  

  • マストランスポートによるInP V溝基板上へのInAsP量子細線の作製と評価

    戸田知朗, 中野義昭

    応用物理学会学術講演会講演予稿集   59th ( 3 )   1222   1998年9月

     詳細

    記述言語:日本語  

  • プリバイアス量子井戸によるMQW電界吸収型光変調器の偏光無依存化 (II)

    加藤正樹, 任田玲子, 中野義昭

    応用物理学会学術講演会講演予稿集   59th ( 3 )   1041   1998年9月

     詳細

    記述言語:日本語  

  • 動的エリプソメトリによるMOVPEのその場観察とInGaAs/InP界面急峻性向上への応用

    須藤 信也, 中野 義昭, 杉山 正和

    東京大学工学部総合試験所年報   ( 57 )   109 - 116   1998年9月 (   ISSN:0371-3067 )

     詳細

    記述言語:英語   出版者・発行元:東京大学工学部総合試験所  

  • 利得結合分布帰還型レーザにおけるアナログ変調歪み低減効果

    二口尚樹, 田口智之, 中野義昭

    電子情報通信学会大会講演論文集   1998   317   1998年9月 (   ISSN:1349-1369 )

     詳細

    記述言語:日本語  

  • 半導体基板上光アイソレータのためのテーパ状3分岐光結合器の結合特性

    横井秀樹, 水本哲弥, 新城伸大, JEONG S H, 二口尚樹, 甲斐田憲明, 中野義昭

    応用物理学会学術講演会講演予稿集   59th ( 3 )   1031   1998年9月

     詳細

    記述言語:日本語  

  • 狭い量子井戸の無秩序化による分布帰還型半導体レーザーの発振波長トリミング

    井上大介, 中野義昭

    応用物理学会学術講演会講演予稿集   59th ( 3 )   999   1998年9月

     詳細

    記述言語:日本語  

  • 非対称三重結合量子井戸によるMQW‐EA変調器のブルーチャープ化 (II)

    加藤正樹, 任田玲子, 中野義昭

    応用物理学会学術講演会講演予稿集   59th ( 3 )   1042   1998年9月

     詳細

    記述言語:日本語  

  • 非相反移相効果を用いた光アイソレータのためのテーパ状3分岐光結合器の結合特性

    横井秀樹, 水本哲弥, 新城伸大, JEONG S H, 二口尚樹, 甲斐田憲明, 中野義昭

    電子情報通信学会大会講演論文集   1998 ( 1 )   258 - 258   1998年9月 (   ISSN:1349-1369 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • 方向性結合半導体光増幅器に基づく新しい波長変換器の提案と解析

    馬炳 真, 中野 義昭

    電子情報通信学会技術研究報告. PS, 光スイッチング   98 ( 188 )   37 - 42   1998年7月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    半導体光増幅器を方向性結合器型配置することにより, 新しい全光波長変換器が可能であることを提案し, その特性を数値解析により予測した.干渉系波長変換器の長所である消光比の改善と, 提案する方向性結合半導体光増幅器波長変換器の特徴である擬デジタル特性を確認した.数値解析は転送行列方式を用いて各光増幅器のキャリア密度, 屈折率, 利得, 伝播定数, そして結合係数の分布を考慮した.

  • 方向性結合半導体光増幅器に基づく新しい波長変換器の提案と解析

    中野義昭, MA B

    電子情報通信学会技術研究報告   98 ( 187(OCS98 27-35) )   37 - 42   1998年7月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    半導体光増幅器を方向性結合器型配置することにより、新しい全光波長変換器が可能であることを提案し、その特性を数値解析により予測した。干渉系波長変換器の長所である消光比の改善と、提案する方向性結合半導体光増幅器波長変換器の特徴である擬デジタル特性を確認した。数値解析は転送行列方式を用いて各光増幅器のキャリア密度、屈折率、利得、伝播定数、そして結合係数の分布を考慮した。

  • 方向性結合半導体光増幅器に基づく新しい波長変換器の提案と解析

    馬 炳真, 中野 義昭

    電子情報通信学会技術研究報告. OCS, 光通信システム   98 ( 187 )   37 - 42   1998年7月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    半導体光増幅器を方向性結合器型配置することにより、新しい全光波長変換器が可能であることを提案し、その特性を数値解析により予測した。干渉系波長変換器の長所である消光比の改善と、提案する方向性結合半導体光増幅器波長変換器の特徴である擬デジタル特性を確認した。数値解析は転送行列方式を用いて各光増幅器のキャリア密度、屈折率、利得、伝播定数、そして結合係数の分布を考慮した。

  • グレーティング装荷非線形方向性結合器の基礎特性

    中津原克己, 水本哲弥, 高橋英司, HOSSAIN S, 阪義和, MA B‐J, 中野義昭

    電子情報通信学会技術研究報告   98 ( 41(LQE98 1-14) )   67 - 72   1998年5月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    グレーティング装荷非線形方向性結合器は、方向性結合器とグレーティングによる分布反射器を組み合わせた構造と、光強度で屈折率が変化する光Kerr効果を利用することにより実現できる。本研究では、非線形光学媒質としてGaInAsPの非共鳴領域を用いスイッチング時間の高速化を、グレーティングを装荷することにより臨界電力の低減をそれぞれ図っている。波長1.55μm帯の光で動作する素子製作の要素技術の確立を行い、対称形グレーティング装荷非線形方向性結合器のcross-portにおける透過光での全光学的set-reset動作を実証したので報告する。

  • グレーティング装荷非線形方向性結合器の基礎特性

    中津原 克己, 水本 哲弥, 高橋 英司, ホセイン サイヌル, 阪 義和, 馬 炳真, 中野 義昭

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   98 ( 41 )   67 - 72   1998年5月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    グレーティング装荷非線形方向性結合器は、方向性結合器とグレーティングによる分布反射器を組み合わせた構造と、光強度で屈折率が変化する光Kerr効果を利用することにより実現できる。本研究では、非線形光学媒質としてGaInAsPの非共鳴領域を用いスイッチング時間の高速化を、グレーティングを装荷することにより臨界電力の低減をそれぞれ図っている。波長1.55μm帯の光で動作する素子製作の要素技術の確立を行い、対称形グレーティング装荷非線形方向性結合器のcross-portにおける透過光での全光学的set-reset動作を実証したので報告する。

  • GaInAsP/InP導波路における全光学的スイッチング特性

    中津原克己, 水本哲弥, 高橋英司, HOSSAIN S, 阪義和, MA B‐J, 中野義昭

    電子情報通信学会技術研究報告   98 ( 1(PS98 1-8) )   19 - 24   1998年4月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    光強度によって屈折率が変化する光Kerr効果を用いることで高速に動作する光制御光スイッチング素子を実現できる。本研究では、非線形光学媒質としてGaInAsPを用いたDFB導波路の試作を行った。試作した素子において波長1.55μm帯の光で全光学的set-reset動作およびしきい値動作を実証し、臨界動作光電力18〜45mWが得られたので報告する。

  • GaInAsP/InP導波路における全光学的スイッチング特性

    中津原 克己, 水本 哲弥, 高橋 英司, ホセイン サイヌル, 阪 義和, 馬 炳真, 中野 義昭

    電子情報通信学会技術研究報告. PS, 光スイッチング   98 ( 1 )   19 - 24   1998年4月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    光強度によって屈折率が変化する光Kerr効果を用いることで高速に動作する光制御光スイッチング素子を実現できる。本研究では、非線形光学媒質としてGaInAsPを用いたDFB導波路の試作を行った。試作した素子において波長1.55μm帯の光で全光学的set-reset動作およびしきい値動作を実証し、臨界動作光電力18〜45mWが得られたので報告する。

  • 光情報通信ネットワーク構築のための広帯域波長可変・単一モード半導体レーザの開発 (マツダ財団S)

    中野義昭

    マツダ財団研究報告書(科学技術振興関係)   10   151 - 158   1998年4月 (   ISSN:1344-0497 )

     詳細

    記述言語:日本語  

  • GaInAsP分布反射器における全光学的しきい値動作

    中津原 克己, 水本 哲弥, 高橋 英司, サイヌル ホセイン, 阪 義和, 馬 炳真, 中野 義昭

    電子情報通信学会総合大会講演論文集   1998 ( 1 )   306 - 306   1998年3月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • WDM用多波長DFBレーザアレイの発振波長トリミング

    中野 義昭, 須藤 剣, 多田 邦雄

    電子情報通信学会総合大会講演論文集   1998 ( 1 )   395 - 395   1998年3月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

  • GaInAsP分布反射器における全光学的しきい値動作

    中津原克己, 水本哲弥, 高橋英司, SAINUL H, 阪義和, MA B J, 中野義昭

    電子情報通信学会大会講演論文集   1998   306   1998年3月 (   ISSN:1349-1369 )

     詳細

    記述言語:日本語  

  • GaInAsPを用いたDFB導波路の全光しきい値特性

    中津原克己, 水本哲弥, 高橋英司, SAINUL H, 阪義和, MA B J, 中野義昭

    応用物理学関係連合講演会講演予稿集   45th ( 3 )   1135   1998年3月

     詳細

    記述言語:日本語  

  • MOVE2面積選択成長によるMMIカプラの作製

    BOUDA M, 甲斐田憲明, 三島善行, 中野義昭, 多田邦雄

    応用物理学関係連合講演会講演予稿集   45th ( 3 )   1129   1998年3月

     詳細

    記述言語:日本語  

  • Macro Cavity法によるInP MOVPEプロセスにおける表面反応の解析

    ASAWAMETHAPANT W, 杉山正和, 須藤信也, 霜垣幸浩, 中野義昭, 小宮山宏, 多田邦雄

    応用物理学関係連合講演会講演予稿集   45th ( 1 )   321   1998年3月

     詳細

    記述言語:日本語  

  • RECVD F‐doped SiO2作製プロセスの反応機構解析

    LIM S W, 霜垣幸治, 中野義昭, 多田邦雄, 小宮山宏

    応用物理学関係連合講演会講演予稿集   45th ( 2 )   873   1998年3月

     詳細

    記述言語:日本語  

  • WDM用多波長DFBレーザアレイの発振波長トリミング

    中野義昭, 須藤剣, 多田邦雄

    電子情報通信学会大会講演論文集   1998   395   1998年3月 (   ISSN:1349-1369 )

     詳細

    記述言語:日本語  

  • V溝基板を利用した分布帰還型InGaAs量子細線レーザの作製

    戸田知朗, KAPON E, 中野義昭, 多田邦雄

    応用物理学関係連合講演会講演予稿集   45th ( 3 )   1116   1998年3月

     詳細

    記述言語:日本語  

  • 半導体スピン工学と光エレクトロニクス 半導体光デバイスから見たスピン工学への期待

    中野義昭

    Optronics   ( 195 )   119 - 122   1998年3月 (   ISSN:0286-9659 )

     詳細

    記述言語:日本語  

  • 非対称結合量子井戸構造を有する進行波型光変調器の試作

    PANG J P, 岩井秀樹, 多田邦雄, 中野義昭

    応用物理学関係連合講演会講演予稿集   45th ( 3 )   1130   1998年3月

     詳細

    記述言語:日本語  

  • 量子井戸進行波超高速光変調器の試作と評価

    PANG J P, 多田邦雄, 中野義昭

    回路実装学術講演大会講演論文集   12th   145 - 146   1998年3月 (   ISSN:0916-0043 )

     詳細

    記述言語:日本語  

  • 非対称三重結合量子井戸によるMQW‐EA変調器のブルーチャープ化

    加藤正樹, 多田邦雄, 中野義昭

    応用物理学関係連合講演会講演予稿集   45th ( 3 )   1137   1998年3月

     詳細

    記述言語:日本語  

  • 面積選択MOVPE成長のプロセスシミュレーション

    三島善行, BOUDA M, 霜垣幸浩, 中野義昭, 多田邦雄

    応用物理学関係連合講演会講演予稿集   45th ( 1 )   289   1998年3月

     詳細

    記述言語:日本語  

  • InP‐MOCVDプロセスの反応機構解析と最適化

    ASAWAMETHAPANT W, 杉山正和, 須藤信也, 霜垣幸浩, 中野義昭, 多田邦雄, 小宮山宏

    化学工学会年会研究発表講演要旨集   63rd   280   1998年2月

     詳細

    記述言語:日本語  

  • PECVDによる低誘電率薄膜作製プロセスの解析

    林相佑, らく栄業, 霜垣幸浩, 中野義昭, 多田邦雄, 小宮山宏

    化学工学会年会研究発表講演要旨集   63rd   275   1998年2月

     詳細

    記述言語:日本語  

  • Wafer surface treatment for integrating laser diode and optical isolator by direct bonding

    T. Mizumoto, H. Yokoi, M. Shimizu, T. Waniishi, N. Futakuchi, N. Kaida, Y. Nakano

    5th Asia-Pacific Conference Communications and 4th Optoloelectronics Communications Conference: The Conference-Vitality to New Century, APCC/OECC 1999   2   1662 - 1664   1998年1月

     詳細

    © 1999 China Inst. Of Communications. GaInAsP surfaces were investigated by contact angle measurement to estimate their hydrophilicity for completing wafer direct bonding. Wafer direct bonding was successfully achieved between O2plasma activated GaInAsP and garnet crystals.

    DOI: 10.1109/APCC.1999.820618

  • 動的エリプソメトリ法によるInGaAs/InP系MOVPE成長のヘテロ界面急峻性の改善

    須藤信也, 杉山正和, 中野義昭, 霜垣幸浩, 小宮山宏, 多田邦雄

    応用物理学関係連合講演会講演予稿集   45th ( 1 )   485 - 488   1998年 (   ISSN:1092-8669 )

     詳細

    記述言語:英語  

  • 多波長DFBレーザアレイの発振波長トリミング (文部省S)

    中野義昭

    スピン制御による半導体超構造の新展開 平成9年度 スピン制御半導体 研究成果報告会論文集   121 - 126   1998年

     詳細

    記述言語:日本語  

  • 多モード干渉カプラと半導体能動デバイスによる光スイッチング集積回路 平成8‐9年度 (文部省S)

    中野義昭

    多モード干渉カプラと半導体能動デバイスによる光スイッチング集積回路 平成8-9年度 No.08555082   29P   1998年

     詳細

    記述言語:日本語  

  • GaAs/AlGaAs進行波方向性結合器型超高速光変調器の設計と試作

    彭 家鵬, 岩井 秀樹, 多田 邦雄, 中野 義昭

    電子情報通信学会技術研究報告. OPE, 光エレクトロニクス   97 ( 362 )   63 - 68   1997年11月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    将来の広帯域光通信システムを実現するためのキーデバイスとなるのが外部光変調器である。半導体材料の高機能性と進行波型光変調器の高速性との融合が望まれる。本報告では、GaAs/AlGaAs系進行波方向性結合器型光変調器について実験を行った。まず、バルク構造を有する光変調器を試作し、DC、高周波実験を行った。小信号変調帯城は22GHzが得られた。続いて、量子井戸構造を有する進行波型光変調器を初めて試作し、50GHzを超える小信号変調帯域を得た。

  • GaAs/AlGaAs進行波方向性結合器型超高速光変調器の設計と試作

    PANG J P, 岩井秀樹, 多田邦雄, 中野義昭

    電子情報通信学会技術研究報告   97 ( 360(ED97 149-165) )   63 - 68   1997年11月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語  

  • GaAs/AlGaAs進行波方向性結合器型超高速光変調器の設計と試作

    彭 家鵬, 岩井 秀樹, 多田 邦雄, 中野 義昭

    電子情報通信学会技術研究報告. OCS, 光通信システム   97 ( 358 )   63 - 68   1997年11月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    将来の広帯域光通信システムを実現するためのキーデバイスとなるのが外部光変調器である。半導体材料の高機能性と進行波型光変調器の高速性との融合が望まれる。本報告では、GaAs/AlGaAs系進行波方向性結合器型光変調器について実験を行った。まず、バルク構造を有する光変調器を試作し、DC、高周波実験を行った。小信号変調帯城は22GHzが得られた。続いて、量子井戸構造を有する進行波型光変調器を初めて試作し、50GHzを超える小信号変調帯域を得た。

  • GaAs/AlGaAs進行波方向性結合器型超高速光変調器の設計と試作

    彭 家鵬, 岩井 秀樹, 多田 邦雄, 中野 義昭

    電子情報通信学会技術研究報告. ED, 電子デバイス   97 ( 360 )   63 - 68   1997年11月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    将来の広帯域光通信システムを実現するためのキーデバイスとなるのが外部光変調器である。半導体材料の高機能性と進行波型光変調器の高速性との融合が望まれる。本報告では、GaAs/AlGaAs系進行波方向性結合器型光変調器について実験を行った。まず、バルク構造を有する光変調器を試作し、DC、高周波実験を行った。小信号変調帯城は22GHzが得られた。続いて、量子井戸構造を有する進行波型光変調器を初めて試作し、50GHzを超える小信号変調帯域を得た。

  • GaAs/AlGaAs進行波方向性結合器型超高速光変調器の設計と試作

    彭 家鵬, 岩井 秀樹, 多田 邦雄, 中野 義昭

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   97 ( 364 )   63 - 68   1997年11月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    将来の広帯域光通信システムを実現するためのキーデバイスとなるのが外部光変調器である。半導体材料の高機能性と進行波型光変調器の高速性との融合が望まれる。本報告では、GaAs/AlGaAs系進行波方向性結合器型光変調器について実験を行った。まず、バルク構造を有する光変調器を試作し、DC、高周波実験を行った。小信号変調帯城は22GHzが得られた。続いて、量子井戸構造を有する進行波型光変調器を初めて試作し、50GHzを超える小信号変調帯域を得た。

  • 1.55μm帯表面回折格子型歪多重量子井戸DFBレーザ

    阿部博明, 三ツ谷真司, 伊藤卓雄, 杉山正和, 須藤信也, 二口尚樹, 霜垣幸浩, 中野義昭, 多田邦雄

    応用物理学会学術講演会講演予稿集   58th ( 3 )   1111   1997年10月

     詳細

    記述言語:日本語  

  • F‐doped SiO2膜の低誘電率化メカニズム (3)

    霜垣幸浩, 中野義昭, 多田邦雄, 小宮山宏, LIM S W

    応用物理学会学術講演会講演予稿集   58th ( 2 )   855   1997年10月

     詳細

    記述言語:日本語  

  • MOVPEリアクター全体の流れ方向成長速度・膜質分布の解析

    杉山正和, ASAWAMETHAPANT W, 須藤信也, 霜垣幸浩, 中野義昭, 菅原活郎, 多田邦雄, 小宮山宏

    応用物理学会学術講演会講演予稿集   58th ( 1 )   229   1997年10月

     詳細

    記述言語:日本語  

  • プリバイアス量子井戸によるMQW電界吸収型光変調器の偏光無依存化

    加藤正樹, 多田邦雄, 中野義昭

    応用物理学会学術講演会講演予稿集   58th ( 3 )   1122   1997年10月

     詳細

    記述言語:日本語  

  • 五段階非対称結合量子井戸を用いたMach‐Zehnder光スイッチ

    杉山昌樹, 多田邦雄, 中野義昭

    応用物理学会学術講演会講演予稿集   58th ( 3 )   1122   1997年10月

     詳細

    記述言語:日本語  

  • 動的エリプソメトリ法によるMOVPE成長層表面のその場観察 (IV) V族雰囲気の効果

    須藤信也, 杉山正和, 中野義昭, 霜垣幸浩, 小宮山宏, 多田邦雄

    応用物理学会学術講演会講演予稿集   58th ( 1 )   229   1997年10月

     詳細

    記述言語:日本語  

  • 吸収性回折格子型利得結合DFBレーザのアナログ変調歪みの数値解析

    二口尚樹, 田口智之, 中野義昭, 多田邦雄

    応用物理学会学術講演会講演予稿集   58th ( 3 )   1112   1997年10月

     詳細

    記述言語:日本語  

  • 多重量子井戸進行波方向性結合器型光変調器の試作

    PANG J P, 岩井秀樹, 多田邦雄, 中野義昭

    応用物理学会学術講演会講演予稿集   58th ( 3 )   1121   1997年10月

     詳細

    記述言語:日本語  

  • 部分回折格子レーザのパラメータ抽出

    佐藤健二, 奥田哲朗, 山田博仁, 鳥飼俊敬, 名倉徹, 中野義昭, 多田邦雄

    応用物理学会学術講演会講演予稿集   58th ( 3 )   1113   1997年10月

     詳細

    記述言語:日本語  

  • Wide-Angle Coupling to Multi-Mode Interference Devices - A Novel Concept for Compacting Photonic Integrated Circuits -

    BOUDA Martin, NAKANO Yoshiaki, TADA Kunio

    IEICE transactions on electronics   80 ( 5 )   640 - 645   1997年5月 (   ISSN:0916-8524 )

     詳細

    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    Extremely compact multi-mode interference (MMI) devices using central wide-angle coupling of input and output waveguides are proposed. It is shown that MMI can be used to change the propagation direction of light without the need for corner mirrors or bent waveguides. The concept can also be used for very compact power splitters which are even smaller than conventional MMI power splitters. Coupling between waveguides at wide angles is discussed and a number of regularities are found. The results can be useful for the design of more compact integrated circuits by a reduction of the number of bent waveguides which usually take up the largest part of the area of a photonic integrated circuit.

  • コプレーナ進行波電極を有するGaAs/AlGaAs方向性結合器型高速光変調器

    彭 家鵬, 多田 邦雄, 中野 義昭

    電子情報通信学会総合大会講演論文集   1997 ( 1 )   387 - 387   1997年3月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    将来のマルチメディア社会では, 画像・音声等の大容量データのやりとりのため, より高速・広帯域な光通信システムの実現が求められる。外部進行波型光変調器は低チャーピング特性を持つ上, 変調帯域は素子容量から解放されるため, 光変調の高速度化に対応できる。今回我々は, バルクダブルヘテロ構造を有するGaAs進行波型光変調器を試作し, 光変調特性を評価したので報告する。

  • 1.55μm帯吸収性回折格子型利得結合DFB歪みMQWレーザの試作

    舟橋政樹, 谷津亮介, 名倉徹, 中野義昭, 多田邦雄

    応用物理学関係連合講演会講演予稿集   44th ( 3 )   1055   1997年3月

     詳細

    記述言語:日本語  

  • 1.55μm帯吸収性回折格子型利得結合DFBレーザの反射戻り光耐性 (II)

    舟橋政樹, 谷津亮介, 名倉徹, 中野義昭, 多田邦雄

    応用物理学関係連合講演会講演予稿集   44th ( 3 )   1055   1997年3月

     詳細

    記述言語:日本語  

  • DFBレーザのしきい値下スペクトルからのパラメータ抽出 (IV)

    名倉徹, 舟橋政樹, MORTHIER G, RAETS R, 中野義昭, 多田邦雄

    応用物理学関係連合講演会講演予稿集   44th ( 3 )   1054   1997年3月

     詳細

    記述言語:日本語  

  • FT‐IRを用いたMOVPE原料ガス熱分解速度の測定 (2)

    杉山正和, 須藤信也, 霜垣幸浩, 中野義昭, 菅原活郎, 多田邦雄, 小宮山宏

    応用物理学関係連合講演会講演予稿集   44th ( 1 )   209   1997年3月

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    記述言語:日本語  

  • GaAs進行波電極方向性結合器型光変調器の試作

    PANG J P, 多田邦雄, 中野義昭

    応用物理学関係連合講演会講演予稿集   44th ( 3 )   1021   1997年3月

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    記述言語:日本語  

  • コプレーナ進行波電極を有するGaAs/AlGaAs方向性結合器型高速光変調器

    PANG J P, 多田邦雄, 中野義昭

    電子情報通信学会大会講演論文集   1997 ( Sogo Pt 4 )   387   1997年3月 (   ISSN:1349-1369 )

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    記述言語:日本語  

  • 吸収性回折格子に端子を設けた利得結合DFBレーザトライオードの試作 (II)

    川西秀和, 福岡哲也, 中野義昭, 多田邦雄

    応用物理学関係連合講演会講演予稿集   44th ( 3 )   1055   1997年3月

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    記述言語:日本語  

  • 実験データに基づくMOVPEプロセスの計算機シミュレーション

    杉山正和, 須藤信也, 霜垣幸浩, 中野義昭, 菅原活郎, 多田邦雄, 小宮山宏

    応用物理学関係連合講演会講演予稿集   44th ( 1 )   209   1997年3月

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    記述言語:日本語  

  • 光デバイスの実装は何が難しいか?-光と電気の違い

    中野 義昭

    回路実装学会誌   12 ( 1 )   41 - 44   1997年1月 (   ISSN:1341-0571 )

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    記述言語:日本語   出版者・発行元:プリント回路学会  

    DOI: 10.5104/jiep1995.12.41

  • 光実装技術入門 第2回 光デバイスの実装は何が難しいか? 光と電気の違い

    中野義昭

    回路実装学会誌   12 ( 1 )   41 - 44   1997年1月 (   ISSN:1341-0571 )

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    記述言語:日本語  

    DOI: 10.5104/jiep1995.12.41

  • 光実装技術入門 第2回 光デバイスの実装は何が難しいか? 光と電気の違い

    中野 義昭

    回路実装学会誌   12 ( 1 )   41 - 44   1997年 (   ISSN:1341-0571 )

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    記述言語:日本語   出版者・発行元:The Japan Institute of Electronics Packaging  

    DOI: 10.5104/jiep1995.12.41

  • 動的エリプソメトリ法によるMOVPE成長層表面のAs‐P置換のその場観察

    須藤信也, 杉山正和, 中野義昭, 霜垣幸浩, 小宮山宏, 多田邦雄

    応用物理学関係連合講演会講演予稿集   44th ( 1 )   257 - 260   1997年 (   ISSN:1092-8669 )

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    記述言語:英語  

  • 光吸収誘起量子井戸混晶化によるDFBレーザの発振波長トリミング

    須藤 剣, 熊野 充剛, 中野 義昭, 多田 邦雄

    電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   96 ( 399 )   7 - 12   1996年12月

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    分布帰還型半導体レーザの発振波長は,作製プロセスの誤差や端面位相によって広い範囲に分布し,高い再現性を得ることは困難である.このため素子の選別,及び外部制御系による波長調整が必要となる.我々は,この問題を解決するため,発振波長を外部に制御系を付加することなく,プロセス終了後の検査段階において調整し,波長再現性を確保するという新概念「波長トリミング」を提案し,その実現に向けて研究を行っている.ここでは,光吸収誘起量子井戸混晶化による波長トリミングの検討を行い,単体の分布帰還型半導体レーザに適用することにより,1.55μmにおいて0.36nmの発振波長の調整を行うことに成功した.

  • 分布帰還型半導体レーザの波長トリミング技術

    須藤 剣, 中野 義昭, 多田 邦雄

    電子情報通信学会論文誌. C-II, エレクトロニクス, II-電子素子・応用   79 ( 10 )   527 - 528   1996年10月 (   ISSN:0915-1907 )

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    分布帰還型半導体レーザの発振波長を,外部に制御系を付加することなくプロセス終了後の検査段階において調整し,波長再現性を確保するという新概念「波長トリミング」を提案し,光誘起屈折率変化を用いることにより,1.55μm帯において約0.1nmの波長調整を実現した.

  • 分布帰還型半導体レーザの波長トリミング技術

    須藤 剣, 中野 義昭, 多田 邦雄

    電子情報通信学会論文誌. C-I, エレクトロニクス, I-光・波動   79 ( 10 )   400 - 401   1996年10月 (   ISSN:0915-1893 )

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    分布帰還型半導体レーザの発振波長を,外部に制御系を付加することなくプロセス終了後の検査段階において調整し,波長再現性を確保するという新概念「波長トリミング」を提案し,光誘起屈折率変化を用いることにより,1.55μm帯において約0.1nmの波長調整を実現した.

  • 分布帰還型半導体レーザの波長トリミング技術

    須藤剣, 中野義昭, 多田邦雄

    電子情報通信学会論文誌 C-2   79 ( 10 )   527 - 528   1996年10月 (   ISSN:0915-1907 )

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    記述言語:日本語  

  • 分布帰還型半導体レーザの波長トリミング技術

    須藤剣, 中野義昭, 多田邦雄

    電子情報通信学会論文誌 C-1   79 ( 10 )   400 - 401   1996年10月 (   ISSN:0915-1893 )

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    記述言語:日本語  

  • DFBレーザの結合係数自動抽出プログラム

    名倉 徹, 佐藤 健二, モルティエル ヘールト, バーツ ルル, 中野 義昭, 多田 邦雄

    電子情報通信学会ソサイエティ大会講演論文集   1996 ( 1 )   315 - 315   1996年9月

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    現在、光通信の光源として、単一モードに優れたDFBレーザが主に使われている。しかし、DFBレーザのデバイスパラメータの測定方法、特に結合係数kの測定方法はあまり確立されていない。ここでは、屈折率結合(IC)DFB/利得結合(GC)DFB/位相シフトDFB/AR-HRコートIC-DFB、いずれのレーザにおいても適用できるパラメータ抽出の方法を開発し、良好な結果を得たので報告する。

  • 1.55μm帯吸収性回折格子型利得結合DFBレーザの反射戻り光耐性

    舟橋政樹, 谷津亮介, 中野義昭, 多田邦雄

    応用物理学会学術講演会講演予稿集   57th ( 3 )   971   1996年9月

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    記述言語:日本語  

  • DFBレーザの結合係数自動抽出プログラム

    名倉徹, 佐藤健二, MORTHIER G, BAETS R, 中野義昭, 多田邦雄

    電子情報通信学会大会講演論文集   1996 ( Society C1 )   315 - 315   1996年9月 (   ISSN:1349-1369 )

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    現在、光通信の光源として、単一モードに優れたDFBレーザが主に使われている。しかし、DFBレーザのデバイスパラメータの測定方法、特に結合係数kの測定方法はあまり確立されていない。ここでは、屈折率結合(IC)DFB/利得結合(GC)DFB/位相シフトDFB/AR-HRコートIC-DFB、いずれのレーザにおいても適用できるパラメータ抽出の方法を開発し、良好な結果を得たので報告する。

  • DFBレーザのしきい値下スペクトルからのパラメータ抽出 (III)

    名倉徹, 佐藤健二, 中野義昭, 多田邦雄, MORTHIER G, BAETS R

    応用物理学会学術講演会講演予稿集   57th ( 3 )   971   1996年9月

     詳細

    記述言語:日本語  

  • F‐doped SiO2膜の低誘電率化メカニズム (2)

    LIM S W, 宮田真光, 内藤司, 霜垣幸浩, 中野義昭, 多田邦雄, 小宮山宏

    応用物理学会学術講演会講演予稿集   57th ( 2 )   689   1996年9月

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    記述言語:日本語  

  • FT‐IRによるMOVPE原料ガス熱分解速度の測定

    杉山正和, 楠浩太郎, 須藤信也, 霜垣幸浩, 中野義昭, 長本英俊, 菅原活朗, 多田邦雄, 小宮山宏

    応用物理学会学術講演会講演予稿集   57th ( 1 )   143   1996年9月

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    記述言語:日本語  

  • p型孤立粒子ダイヤモンド/n型シリコンヘテロ接合ダイオードの作製と電気特性

    霜垣幸浩, GUO Y, 中野義昭, 多田邦雄, 小宮山宏

    応用物理学会学術講演会講演予稿集   57th ( 2 )   419   1996年9月

     詳細

    記述言語:日本語  

  • レーザ誘起量子井戸混晶化によるDFBレーザの発振波長トリミング

    須藤剣, 熊野充剛, 中野義昭, 多田邦雄

    応用物理学会学術講演会講演予稿集   57th ( 3 )   973   1996年9月

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    記述言語:日本語  

  • 光誘起屈折率変化によるDFBレーザの発振波長トリミング

    須藤剣, 中野義昭, 多田邦雄

    応用物理学会学術講演会講演予稿集   57th ( 3 )   972   1996年9月

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    記述言語:日本語  

  • 分光エリプソメトリ法によるMOVPE成長層のその場観察 (II) As‐P置換

    須藤信也, 杉山正和, 中野義昭, 霜垣幸浩, 小宮山宏, 多田邦雄

    応用物理学会学術講演会講演予稿集   57th ( 1 )   143   1996年9月

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    記述言語:日本語  

  • 分光エリプソメトリ法によるMOVPE成長層のその場観察 (I) 成長レートと組成

    須藤信也, 杉山正和, 中野義昭, 霜垣幸浩, 小宮山宏, 多田邦雄

    応用物理学会学術講演会講演予稿集   57th ( 1 )   143   1996年9月

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    記述言語:日本語  

  • 変形ACQW構造を用いた低挿入損失自己電気光学効果素子

    萩原周治, 小林靖之, 中野義昭, 多田邦雄, LIANG J‐H, MA B‐J

    応用物理学会学術講演会講演予稿集   57th ( 3 )   913   1996年9月

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    記述言語:日本語  

  • 変形結合量子井戸構造における光吸収の電界依存性

    梁 吉鎬, 多田 邦雄, 中野 義昭

    電子情報通信学会技術研究報告. MW, マイクロ波   96 ( 136 )   37 - 42   1996年6月

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    SEEDの動作波長における電界印加状態での残留吸収を低減することを目的として、光吸収端の大幅な実効的ブルーシフトが実現可能な変形結合量子井戸構造を提案し、それにおける光吸収の電界依存性を調べた。作製された試料からは電界印加による吸収端の実効的ブルーシフト量35meV、吸収係数の変化量11200cm^&lt;-1&gt;が得られており、はじめて無バイアス状態に比べて光吸収係数が4.4倍と大幅に低減された残留吸収特性が確認できた。

  • 変形結合量子井戸構造における光吸収の電界依存性

    多田邦雄, 中野義昭, LIANG J‐H

    電子情報通信学会技術研究報告   96 ( 136(MW96 32-39) )   37 - 42   1996年6月 (   ISSN:0913-5685 )

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    SEEDの動作波長における電界印加状態での残留吸収を低減することを目的として、光吸収端の大幅な実効的ブルーシフトが実現可能な変形結合量子井戸構造を提案し、それにおける光吸収の電界依存性を調べた。作製された試料からは電界印加による吸収端の実効的ブルーシフト量35meV、吸収係数の変化量11200cm^<-1>が得られており、はじめて無バイアス状態に比べて光吸収係数が4.4倍と大幅に低減された残留吸収特性が確認できた。

  • フォトニックスイッチングへ向けた半導体光デバイスのモノリシック集積化

    バウダ マルティン, 中野 義昭, 多田 邦雄

    電子情報通信学会総合大会講演論文集   1996 ( 2 )   694 - 695   1996年3月

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    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    Despite the numerous advantages of monolithic photnic integration of semiconductor devices, this technology is still in a very early stage of development and the number of PICs in testbeds for future photonic switching system is extremely limited.Many people still do not concider integration in such systems practical with respect to the disadvantages it could have.This situation has to be changed in short term because otherwise the optical swiching system architectures might become tuned to hybrid components making integration in a later stage unneccesarily more difficult.

  • モードフィールド展開法によるMMI導波路への広角結合シミュレーション

    マルティン バウダ, 中野 義昭, 多田 邦雄, 杉山 昌樹

    電子情報通信学会総合大会講演論文集   1996 ( 1 )   177 - 177   1996年3月

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    記述言語:英語   出版者・発行元:一般社団法人電子情報通信学会  

    Since the introduction of the self-imaging principle it has been generally adapted as an important principle in integrated optics and successfully applied in several types of Multi Mode Interference(MMI) components. In this paper we show that the self-imaging principle allows to avoid bent input and output waveguides which usually take more space than the MMI device itself, by waveguides coupled at very large angles to the MMI section with very small losses.

  • 吸収性回折格子型利得結合DFBレーザの高周波小信号変調特性

    戸田 知朗, 須藤 剣, 中野 義昭, 多田 邦雄

    電子情報通信学会総合大会講演論文集   1996 ( 1 )   379 - 379   1996年3月

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    光通信や光情報処理の高速大容量化にともなって、半導体レーザの直接変調帯域の拡大が求められ、各所で研究が盛んである。分けてもGaAs系半導体材料を基盤に用いたレーザの高速化をめぐる研究の成果は目覚ましいものがある。測定技術の発展とも相俟って、現在までに40GHzにも及ぶ変調帯域の実現が報告されている。こういったレーザの研究は、作製が比較的容易でかつ簡便にモデル化されるファブリー・ペロー型(Fabry-Perot)に絞られて行われていることが多いが、実際の応用を念頭においた場合、モードの制御及び安定性、低チャーピング,発振波長の制御等の点で優れる分布帰還型(distributed feedback, DFB)レーザがより重要である。今回われわれは、特に吸収解析格子型利得結合DFBレーザについて、小信号変調特性の観点から高速動作特性の実験,解析を行ったので報告する。

  • DFBレーザのしきい値下スペクトルからのパラメータ抽出 (II)

    名倉徹, 佐藤健二, MORTHIER G, BAETS R, 中野義昭, 多田邦雄

    応用物理学関係連合講演会講演予稿集   43rd ( 3 )   1041   1996年3月

     詳細

    記述言語:日本語  

  • F‐doped SiO2膜の低誘電率化メカニズム

    宮田真光, 霜垣幸浩, 中野義昭, 多田邦雄, 小宮山宏, LIM S W

    応用物理学関係連合講演会講演予稿集   43rd ( 2 )   660   1996年3月

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    記述言語:日本語  

  • ECR‐RIBE装置の装置内ガス混合状態の検討

    西岡邦和, 杉山正和, 根塚昌宏, 霜垣幸浩, 中野義昭, 多田邦雄, 小宮山宏

    応用物理学関係連合講演会講演予稿集   43rd ( 2 )   556   1996年3月

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    記述言語:日本語  

  • 分布電極構造を用いた高効率FM変調用DFBレーザ

    廿日出悟, 近藤直樹, 中野義昭, 多田邦雄

    応用物理学関係連合講演会講演予稿集   43rd ( 3 )   1042   1996年3月

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    記述言語:日本語  

  • 増幅性格子利得結合DFBレーザの三次高調波歪み解析

    藤谷龍一郎, 佐藤健二, MORTHIER G, BAETS R, 中野義昭, 多田邦雄

    応用物理学関係連合講演会講演予稿集   43rd ( 3 )   1042   1996年3月

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    記述言語:日本語  

  • 吸収性回折格子型利得結合DFBレーザの小信号直接変調特性の測定

    戸田知朗, 須藤剣, 重城貴彦, 中野義昭, 多田邦雄

    応用物理学関係連合講演会講演予稿集   43rd ( 3 )   1041   1996年3月

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    記述言語:日本語  

  • 吸収性回折格子型利得結合DFBレーザの高周波小信号変調特性

    戸田知朗, 須藤剣, 中野義昭, 多田邦雄

    電子情報通信学会大会講演論文集   1996 ( Sogo Pt 4 )   379   1996年3月 (   ISSN:1349-1369 )

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    記述言語:日本語  

  • 半導体量子井戸光変調器/スイッチの完全偏光無依存化への挑戦

    加藤 正樹, 多田 邦雄, 中野 義昭

    電子情報通信学会ソサイエティ大会講演論文集   1995 ( 1 )   361 - 362   1995年9月

     詳細

    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    ISDN時代を迎えて、光通信の適用分野がローカルエリアネットワーク(LAN)やインテリジェントビルなどの地域網へ広がってくると、様々な光回路部品が必要となる。中でも光変調器/スイッチは、高速光伝送や光交換などのためばかりでなく端末装置や光ファイバケーブルの切り替えなどのためにも不可欠な、最も基本的な光回路部品である。現在敷設されている光ファイバの大部分は偏光面保持特性を持たない光ファイバであり、使用される光部品は偏光無依存であることが要請される。半導体量子井戸における量子閉じ込めシュタルク効果(QCSE)に依拠する導波路型光変調器/スイッチは、小型、低電圧駆動、高速であるが、偏光依存性が大きいという問題がある。これは、電圧印加による励起子吸収波長のシフト(シュタルクシフト)がキャリアの実効質量に依存することと、TEモード光は電子-重い正孔、電子-軽い正孔のいずれの遷移とも相互作用するが、TMモード光は電子-軽い正孔の遷移のみと相互作用することに起因している。

  • GaAs系光集積回路に関する研究 レーザホログラフィック露光による,高コントラスト回折格子形成に関する研究

    岡本和也, 中野義昭, 多田邦雄

    東京大学工学部総合試験所年報   54   93 - 100   1995年9月 (   ISSN:0371-3067 )

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    記述言語:日本語  

  • GaAs系光積回路に関する研究 モード結合理論を用いたDFBレーザと導波路間のエバネッセント波結合解析

    山田篤志, 岡本和也, 中野義昭, 多田邦雄

    東京大学工学部総合試験所年報   54   101 - 106   1995年9月 (   ISSN:0371-3067 )

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    記述言語:日本語  

  • ドライエッチング装置の反応工学的モデル化

    杉山正和, 西岡邦和, 山泉貴之, 霜垣幸浩, 中野義昭, 多田邦雄, 小宮山宏, 根塚晶宏

    化学工学会秋季大会研究発表講演要旨集   28th ( Pt 1 )   223   1995年9月

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    記述言語:日本語  

  • レ-ザホログラフィック露光による,高コントラスト回折格子形成に関する研究

    岡本 和也, 中野 義昭, 多田 邦雄

    東京大学工学部総合試験所年報   ( 54 )   p93 - 100   1995年9月 (   ISSN:0371-3067 )

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    記述言語:日本語   出版者・発行元:東京大学工学部総合試験所  

  • 半導体量子井戸光変調器/スイッチの完全偏光無依存化への挑戦

    加藤正樹, 多田邦雄, 中野義昭

    電子情報通信学会大会講演論文集   1995 ( Society C1 )   361 - 362   1995年9月 (   ISSN:1349-1369 )

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    記述言語:日本語  

  • Impurity-Free Disordering of InGaAs/InGaAlAs/InP Quantum Wells by Dielectric Thin Cap Films and Its In-Plane Spatial Resolution

    SUDO S., ONISHI H., NAKANO Y., SHIMOGAKI Y., TADA K., MONDRY M. J., COLDREN L. A.

    Extended abstracts of the ... Conference on Solid State Devices and Materials   1995   1025 - 1027   1995年8月

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    記述言語:英語  

  • Simple Kinetic Model of ECR-RIBE Reacor for the Optimization of GaAs Etching Process

    SUGIYAMA M., YAMAIZUMI T., NEZUKA M., SHIMOGAKI Y., NAKANO Y., TADA K., KOMIYAMA H.

    Extended abstracts of the ... Conference on Solid State Devices and Materials   1995   767 - 769   1995年8月

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    記述言語:英語  

  • Preparation of Low Dielectric Constant F-Doped SiO_2 Films by PECVD

    LIM SangWoo, SHIMOGAKI Yukihiro, NAKANO Yoshiaki, TADA Kunio, KOMIYAMA Hiroshi

    Extended abstracts of the ... Conference on Solid State Devices and Materials   1995   163 - 165   1995年8月

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    記述言語:英語  

  • 伸張歪および質量依存井戸幅量子井戸によるMQW光変調器の広波長域偏光無依存動作

    加藤正樹, 多田邦雄, 中野義昭

    応用物理学会学術講演会講演予稿集   56th ( 3 )   940   1995年8月

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    記述言語:日本語  

  • CF4添加によるSiO2‐PCVDプロセスの改善

    林相佑, 霜垣幸浩, 中野義昭, 小宮山宏, 多田邦雄

    応用物理学関係連合講演会講演予稿集   42nd ( Pt 2 )   786   1995年3月

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    記述言語:日本語  

  • ECR‐RIBEによるGaAsエッチング特性のCl2流量依存性

    杉山正和, 山泉貴之, 根塚昌宏, 霜垣幸浩, 中野義昭, 小宮山宏, 多田邦雄

    応用物理学関係連合講演会講演予稿集   42nd ( Pt 2 )   599   1995年3月

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    記述言語:日本語  

  • GaAs系横型電極レーザとY分岐単一モード導波路との集積化

    岡本和也, 山田篤志, 中野義昭, 多田邦雄

    応用物理学関係連合講演会講演予稿集   42nd ( Pt 3 )   1090   1995年3月

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    記述言語:日本語  

  • モード結合理論による,DFBレーザと導波路間のエバネッセント結合解析

    山田篤志, 岡本和也, 中野義昭, 多田邦雄

    応用物理学関係連合講演会講演予稿集   42nd ( Pt 3 )   1096   1995年3月

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    記述言語:日本語  

  • 吸収性回折格子に端子を設けた利得結合DFBレーザトライオードの試作

    江口匡史, 川西秀和, 中野義昭, 多田邦雄

    応用物理学関係連合講演会講演予稿集   42nd ( Pt 3 )   1098   1995年3月

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    記述言語:日本語  

  • 熱拡散を用いたGaAsバイポーラトランジスタの簡易作製法

    西川剛志, 霜垣幸浩, 中野義昭, 多田邦雄

    応用物理学関係連合講演会講演予稿集   42nd ( Pt 3 )   1330   1995年3月

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    記述言語:日本語  

  • GaAs系横電極DFBレーザと単一モード導波路とのモノリシック集積

    岡本和也, 山田篤志, 入田丈司, 中野義昭, 多田邦雄

    応用物理学会学術講演会講演予稿集   56th ( 3 )   A131 - A132   1995年

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    記述言語:英語  

  • GaAs系光集積回路に関する研究 GaAs/AlGaAs系横型電極レーザと単一モード導波路デバイスとのモノリシック集積化

    岡本和也, 山田篤志, 中野義昭, 多田邦雄

    東京大学工学部総合試験所年報   54   A131 - A132   1995年 (   ISSN:0371-3067 )

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    記述言語:英語  

  • InGaAs/InAlAs光変調器の偏光無依存化のための質量依存性量子井戸構造

    浜川篤志, 石原清輝, 山口武治, 中野義昭, 多田邦雄, 西片一昭, 入川理徳

    応用物理学関係連合講演会講演予稿集   34 ( 10 )   L1280 - L1282   1995年 (   ISSN:1347-4065 )

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    記述言語:英語  

    DOI: 10.1143/JJAP.34.L1280

  • 特集「光回路実装技術」発行にあたって

    中野 義昭

    回路実装学会誌   10 ( 5 )   285 - 285   1995年 (   ISSN:1341-0571   eISSN:1884-1201 )

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    記述言語:日本語   出版者・発行元:The Japan Institute of Electronics Packaging  

    DOI: 10.5104/jiep1995.10.285

  • SiO2膜による量子井戸無秩序化の面内分解能評価

    須藤信也, 中野義昭, 霜垣幸浩, 多田邦雄, 岡本和也, MONDRY M J, COLDREN L A

    応用物理学会学術講演会講演予稿集   55th ( 3 )   1096   1994年9月

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    記述言語:日本語  

  • シリカ薄膜を用いた,GaAsへの開管式不純物ドーピングに関する研究

    岡本和也, 山田篤志, 霜垣幸浩, 中野義昭, 多田邦雄

    東京大学工学部総合試験所年報   53   111 - 116   1994年9月 (   ISSN:0371-3067 )

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    記述言語:日本語  

  • 吸収性回折格子利得結合DFBレーザの反射戻り光誘起雑音測定

    CHEN W, 須藤剣, 中野義昭, 多田邦雄

    応用物理学会学術講演会講演予稿集   55th ( 3 )   973   1994年9月

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    記述言語:日本語  

  • 化学増幅型単層ネガレジストによる,GaAs基板上短周期回折格子の電子線描画に関する研究

    岡本和也, 入田丈司, 中野義昭, 多田邦雄

    東京大学工学部総合試験所年報   53   105 - 110   1994年9月 (   ISSN:0371-3067 )

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    記述言語:日本語  

  • 高効率キャリア捕獲構造多重量子井戸レーザ

    山田篤志, 岡本和也, 中野義昭, 多田邦雄

    応用物理学会学術講演会講演予稿集   55th ( 3 )   956   1994年9月

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    記述言語:日本語  

  • 半導体光集積デバイス

    多田 邦雄, 中野 義昭

    電子情報通信学会論文誌. C-I, エレクトロニクス, I-光・波動   77 ( 5 )   238 - 249   1994年5月 (   ISSN:0915-1893 )

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    記述言語:日本語   出版者・発行元:一般社団法人電子情報通信学会  

    半導体材料は,発光,光増幅,光検出,光変調/スイッチ,光導波など,必要なほとんどの光機能を実現できるので,モノリシック光集積回路に適する.また,上記機能の実現に利用される種々の物理現象効果の性能指数が大であり,かつこれらの効果を生じさせる空間領域を都合のよい形状に整えるのが容易なので,小形化,高性能化に有利である.半導体を利用した集積光デバイスの研究開発には,既に四半世紀に及ぶ歴史と知識,技術の蓄積がある.電子集積回路に比べ実用化には時間がかかったが,1980年代後半から急速な発展をみせている.半導体レーザの進歩,量子井戸構造の導入普及,エピタキシャル成長技術を初めとするプロセス技術の発展などのシーズ面からの推進力と,幹線系,ノード系,加入者系通信ネットワークの光化というニーズ面からの牽引力が同時に働いた結果と思われる.本論文では,半導体光要素デバイスをモノリシック集積化して得られるデバイス/回路について,その現状動向を発光,光スイッチ,合分波の各機能別に分類整理して概説する.最後に,今後の課題として半導体光集積システムの必要性に言及する.

  • 二重拡散によるGaAs/AlGaAs系ヘテロバイポーラトランジスタ構造光変調器/スイッチ作製プロセスの研究

    霜垣幸浩, 西川剛志, 瓜生誠司, 高島和則, 中野義昭, 多田邦雄

    豊田研究報告   ( 47 )   83 - 87   1994年5月 (   ISSN:0372-039X )

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    記述言語:日本語  

  • 半導体光集積デバイス

    多田邦雄, 中野義昭

    電子情報通信学会論文誌 C-1   77 ( 5 )   238 - 249   1994年5月 (   ISSN:0915-1893 )

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    記述言語:日本語  

  • 亜鉛と錫のGaAsへの同時拡散

    西川剛志, 霜垣幸浩, 中野義昭, 多田邦雄

    応用物理学関係連合講演会講演予稿集   41st ( Pt 3 )   1245   1994年3月

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    記述言語:日本語  

  • 分布帰還型半導体レーザの動的波長変動制御構造 (IV) 低チャーピング化への応用

    LIN S M, 中野義昭, 須藤剣, LONG T C, 多田邦雄

    応用物理学関係連合講演会講演予稿集   41st ( Pt 3 )   1011   1994年3月

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    記述言語:日本語  

  • 化学増幅型単層ネガレジストによるGaAs基板上0.06μm Line&Space電子線描画

    入田丈司, 岡本和也, 中野義昭, 多田邦雄

    応用物理学関係連合講演会講演予稿集   41st ( Pt 2 )   603   1994年3月

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    記述言語:日本語  

  • 吸収性回折格子型利得結合分布帰還型半導体レーザの光波長フィルタ動作

    大谷朋広, 石黒仁揮, 中野義昭, 多田邦雄

    応用物理学関係連合講演会講演予稿集   41st ( Pt 3 )   1027   1994年3月

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    記述言語:日本語  

  • 吸収性回折格子型利得結合DFBレーザの発生する光短パルスの時間分解スペクトル

    須藤剣, 中野義昭, 多田邦雄, 平田隆昭

    応用物理学関係連合講演会講演予稿集   41st ( Pt 3 )   1014   1994年3月

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    記述言語:日本語  

  • 非対称チャープトグレーティングDFBレーザのモード特性

    CHEN N, 中野義昭, 多田邦雄

    応用物理学関係連合講演会講演予稿集   41st ( Pt 3 )   1011   1994年3月

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    記述言語:日本語  

  • 量子井戸幅の相違を利用した偏光無依存光位相変調

    山口武治, 明浦公彦, 多田邦雄, 中野義昭

    応用物理学関係連合講演会講演予稿集   41st ( Pt 3 )   1004   1994年3月

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    記述言語:日本語  

  • 半導体レーザの複合機能・集積化

    多田邦雄, 中野義昭

    超高速・超並列光エレクトロニクス総合シンポジウム講演論文集   79 - 83   1994年

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    記述言語:日本語  

  • 2分割チャープト回折格子波長可変分布帰還型半導体レーザの試作

    中野義昭, 多田邦雄, CHEN N

    応用物理学会学術講演会講演予稿集   54th ( 3 )   1002   1993年9月

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    記述言語:日本語  

  • MgOを拡散源として用いた開管法によるGaAs中へのp型拡散

    西川剛志, 霜垣幸治, 中野義昭, 多田邦雄

    応用物理学会学術講演会講演予稿集   54th ( 3 )   1188   1993年9月

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    記述言語:日本語  

  • シラノール拡散溶剤を用いたGaAsへのn型不純物ドーピング

    岡本和也, 山田篤志, 霜垣幸治, 中野義昭, 多田邦雄

    応用物理学会学術講演会講演予稿集   54th ( 3 )   1187   1993年9月

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    記述言語:日本語  

  • 分布帰還型半導体レーザの動的波長変動制御構造 (III) 素子の試作

    林勝民, 中野義昭, 多田邦雄

    応用物理学会学術講演会講演予稿集   54th ( 3 )   1003   1993年9月

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    記述言語:日本語  

  • 吸収性回折格子型利得結合DFBレーザにおける軸方向空間ホールバーニング自己抑圧効果

    須藤剣, 中野義昭, 多田邦雄, 菊池和朗, 平田隆昭, 細松春夫

    応用物理学会学術講演会講演予稿集   54th ( 3 )   1001   1993年9月

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    記述言語:日本語  

  • 吸収性回折格子型利得結合DFBレーザの特異な緩和振動

    中野義昭, 須藤剣, 多田邦雄, 細松春夫, MAJEWSKI M L, COLDREN L A

    応用物理学会学術講演会講演予稿集   54th ( 3 )   1000   1993年9月

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    記述言語:日本語  

  • 掃引外部鏡によるDFBレーザの結合係数精密測定

    MAJEWSKI M L, COHEN D A, COLDREN L A, 中野義昭

    応用物理学会学術講演会講演予稿集   54th ( 3 )   999   1993年9月

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    記述言語:日本語  

  • 波長325nmホログラフィック露光におけるグレーティングパタンー形成過程

    岡本和也, 中野義昭, 多田邦雄

    応用物理学会学術講演会講演予稿集   54th ( 3 )   998   1993年9月

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    記述言語:日本語  

  • チャープト回折格子波長可変DFBレーザ/フィルタのしきい値特性解析

    CHEN N, 中野義昭, 多田邦雄

    応用物理学会学術講演会講演予稿集   53rd ( 3 )   938   1992年9月

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    記述言語:日本語  

  • 二重拡散法を用いたGaAs基板上へのバイポーラトランジスタ試作

    瓜生誠司, 西川剛志, 霜垣幸浩, 中野義昭, 多田邦雄

    応用物理学会学術講演会講演予稿集   53rd ( 3 )   1092   1992年9月

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    記述言語:日本語  

  • 光集積回路に向けた半導体レ-ザ-技術

    中野 義昭

    光学   21 ( 9 )   p605 - 611   1992年9月 (   ISSN:0389-6625 )

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    記述言語:日本語   出版者・発行元:応用物理学会分科会日本光学会  

    記事分類: 電気工学--電子工学--集積回路

  • 光集積回路に向けた半導体レーザー技術

    中野義昭

    光学   21 ( 9 )   605 - 611   1992年9月 (   ISSN:0389-6625 )

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    記述言語:日本語  

  • 利得結合係数の増大によるDFBレーザの単一縦モード動作歩留り改善

    CAO H L, 須藤剣, LUO Y, 中野義昭, 多田邦雄, 土橋万知夫, 細松春夫

    応用物理学会学術講演会講演予稿集   53rd ( 3 )   933   1992年9月

     詳細

    記述言語:日本語  

  • 吸収性回折格子型利得結合多重量子井戸DFBレーザの試作

    CAO H L, LUO Y, 須藤剣, 中野義昭, 多田邦雄, 土橋万知夫, 細松春夫

    応用物理学会学術講演会講演予稿集   53rd ( 3 )   933   1992年9月

     詳細

    記述言語:日本語  

  • 感光性ポリイミドを利用した埋め込みヘテロ構造DFBレーザの作製

    LIN S M, 中野義昭, 多田邦雄, 永久克巳

    応用物理学会学術講演会講演予稿集   53rd ( 3 )   932   1992年9月

     詳細

    記述言語:日本語  

  • 吸収性回折格子の導電型反転による利得結合DFBレーザの特性改善

    LUO Y, CAO H L, 土橋万知夫, 中野義昭, 多田邦雄, 細松春夫

    応用物理学関係連合講演会講演予稿集   39th ( Pt 3 )   967   1992年3月

     詳細

    記述言語:日本語  

  • 吸収性回折格子により横方向閉じ込めとLEF光帰還を施した利得結合DFBレーザ

    土橋万知夫, LUO Y, CAO H L, 細松春夫, 中野義昭, 多田邦雄

    応用物理学関係連合講演会講演予稿集   39th ( Pt 3 )   967   1992年3月

     詳細

    記述言語:日本語  

  • 吸収性回折格子型利得結合DFBレーザの超低チャープ光短パルス発生

    LUO Y, CAO H L, 高橋亮, 中野義昭, 多田邦雄, 神谷武志, 細松春夫

    応用物理学関係連合講演会講演予稿集   39th ( Pt 3 )   967   1992年3月

     詳細

    記述言語:日本語  

  • 深い回折格子上に成長したInGaAsP混晶のTEM分析

    井上武史, 中島真一, 沖十九康, 中野義昭, 多田邦雄

    応用物理学関係連合講演会講演予稿集   39th ( Pt 1 )   303   1992年3月

     詳細

    記述言語:日本語  

  • 吸収性回折格子型利得結合DFBレーザにおける格子デューティーファクターの最適化―解析と試作

    CAO H L, LUO Y, 中野義昭, 多田邦雄, 細松春夫

    応用物理学関係連合講演会講演予稿集   4 ( 10 )   1099 - 1102   1992年 (   ISSN:1941-0174 )

     詳細

    記述言語:英語  

    DOI: 10.1109/68.163745

  • 吸収性回折格子を有する利得結合DFBレーザの低しきい値化のための理論的検討

    中野義昭, 多田邦雄, 井上武史, CAO H L, LUO Y

    電子情報通信学会技術研究報告   91 ( 402(OQE91 132-150) )   19 - 24   1991年12月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語  

  • InP系利得結合DFBレーザの試作 (II)

    井上武史, 中島真一, 沖十九康, 中野義昭, 多田邦雄

    応用物理学会学術講演会講演予稿集   52nd ( 3 )   1001   1991年10月

     詳細

    記述言語:日本語  

  • C2H6/H2RIEによるInGaAsPのエッチング

    入田丈司, 内田裕介, 井上武史, 中島真一, 沖十九康, 中野義昭, 多田邦雄

    応用物理学関係連合講演会講演予稿集   38th ( Pt 3 )   1212   1991年3月

     詳細

    記述言語:日本語  

  • InP系利得結合DFBレーザーの試作

    中島真一, 井上武史, 入田丈司, 沖十九康, 岩岡秀人, 中野義昭, 多田邦雄

    応用物理学関係連合講演会講演予稿集   38th ( Pt 3 )   967   1991年3月

     詳細

    記述言語:日本語  

  • MBE法によるIII‐V族化合物半導体積層システム作製とその新しい応用

    多田邦雄, 中野義昭

    応用物理学関係連合講演会講演予稿集   38th ( Pt 0 )   1250   1991年3月

     詳細

    記述言語:日本語  

  • 利得結合DFBレーザにおける非対称端面コーティングの効果

    中野義昭, 内田裕介, 多田邦雄

    応用物理学関係連合講演会講演予稿集   38th ( Pt 3 )   968   1991年3月

     詳細

    記述言語:日本語  

  • 分布帰還型半導体レーザの動的波長変動制御構造 (II) 電極設計

    中野義昭, 永久克己, 多田邦雄, LIN S M

    応用物理学関係連合講演会講演予稿集   38th ( Pt 3 )   968   1991年3月

     詳細

    記述言語:日本語  

  • GaAsへの低濃度Cd拡散

    佐藤健二, 中野義昭, 多田邦雄, GAUTAM D K

    応用物理学関係連合講演会講演予稿集   30 ( 6 R )   1176 - 1180   1991年 (   ISSN:1347-4065 )

     詳細

    記述言語:英語  

    DOI: 10.1143/JJAP.30.1176

  • GaAlAs/GaAs単一量子井戸利得結合DFBレーザの試作

    土橋万知夫, 細松春夫, 中野義昭, 多田邦雄, LUO Y, CAO H L

    応用物理学関係連合講演会講演予稿集   227 ( Pt 3 )   168 - 171   1991年

     詳細

    記述言語:英語  

  • 分布帰還型半導体レーザの研究

    中野義昭

    旭硝子財団研究報告   59   297 - 305   1991年 (   ISSN:0916-7064 )

     詳細

    記述言語:日本語  

  • 分布帰還型半導体レ-ザの研究

    中野 義昭

    旭硝子財団研究報告   ( 59 )   p297 - 305   1991年 (   ISSN:0916-7064 )

     詳細

    記述言語:日本語   出版者・発行元:旭硝子財団  

    資料形態 : テキストデータ プレーンテキスト

  • 傾斜ドライエッチング端面を有するDFBレーザ/TWA集積化素子

    中野義昭, 林陽一, 坂口泰之, CHEN N, 多田邦雄

    応用物理学会学術講演会講演予稿集   51st ( 3 )   916   1990年9月

     詳細

    記述言語:日本語  

  • 利得結合DFBレーザのダイナミック特性 (I) 光短パルス発生(16ps)

    LUO Y, 高橋亮, 中野義昭, 多田邦雄, 神谷武志, 細松春夫, 岩岡秀人

    応用物理学会学術講演会講演予稿集   51st ( 3 )   917   1990年9月

     詳細

    記述言語:日本語  

  • 利得結合DFBレーザのダイナミック特性 (II) 低チャーピング性

    LUO Y, 高橋亮, 中野義昭, 多田邦雄, 神谷武志, 細松春夫, 岩岡秀人

    応用物理学会学術講演会講演予稿集   51st ( 3 )   917   1990年9月

     詳細

    記述言語:日本語  

  • 分布帰還型半導体レーザの動的波長変動制御構造 (I) 動作特性解析

    中野義昭, 助川直伸, LIN S M, 多田邦雄

    応用物理学会学術講演会講演予稿集   51st ( 3 )   917   1990年9月

     詳細

    記述言語:日本語  

  • GaAs系分布帰還型半導体レーザーとその縦モード制御

    中野義昭, 多田邦雄

    応用物理   58 ( 11 )   1554 - 1573   1989年11月 (   ISSN:0369-8009 )

     詳細

    記述言語:日本語   出版者・発行元:The Japan Society of Applied Physics  

    分布帰還型半導体レーザーは,スペクトル特性に優れるため,半導体レーザーの主流となりつつある.本稿では,そのなかで波長0.7~0.8μm帯(短波長帯)を受け持つものとして, GaAs系化合物半導体材料に基づくレーザーを取り上げ,その研究経緯と現状を紹介する.また,分布帰還型半導体レーザーの波長純度をさらに向上するために考案,研究されている種々の縦モード制御用素子構造についても,一般論およびGaA8系レーザーを舞台に最近新たに展開されている例を中心に解説する.

    DOI: 10.11470/oubutsu1932.58.1554

  • 発振波長安定化分布帰還型半導体レーザ

    中野義昭, 多田邦雄

    J Fac Eng Univ Tokyo Ser A   ( 27 )   34 - 35   1989年11月 (   ISSN:0563-7945 )

     詳細

    記述言語:日本語  

  • GaAs系分布帰還型半導体レーザーとその縦モード制御

    中野 義昭, 多田 邦雄

    応用物理   58 ( 11 )   1554 - 1573   1989年 (   ISSN:0369-8009 )

     詳細

    出版者・発行元:The Japan Society of Applied Physics  

    分布帰還型半導体レーザーは,スペクトル特性に優れるため,半導体レーザーの主流となりつつある.本稿では,そのなかで波長0.7~0.8μm帯(短波長帯)を受け持つものとして, GaAs系化合物半導体材料に基づくレーザーを取り上げ,その研究経緯と現状を紹介する.また,分布帰還型半導体レーザーの波長純度をさらに向上するために考案,研究されている種々の縦モード制御用素子構造についても,一般論およびGaA8系レーザーを舞台に最近新たに展開されている例を中心に解説する.

    DOI: 10.11470/oubutsu1932.58.1554

  • 短波長帯分布帰還型半導体レーザー

    中野義昭, 多田邦雄

    レーザー研究   16 ( 11 )   732 - 740   1988年11月 (   ISSN:0387-0200 )

     詳細

    記述言語:日本語   出版者・発行元:The Laser Society of Japan  

    To utilize excellent spectral characteristics of semiconductor distributed feedback (DFB) lasers in the various fields of optical electronics applications, it is necessary to expand the wavelength range in which their oscillation is available, especially into short wavelength region. Here we describe our effort to develop short wavelength DFB lasers with GaAIAs/GaAs materials. As for 0.88μm range, we have successfully fabricated a high-performance device with very low threshold current by employing buried heterostructure. Introduction of the micro-fabrication techniques such as the reactive ion etching has enabled us to realize a 0.88?Em DFB laser with novel modulated stripe width structure for complete single longitudinal mode oscillation. We have also succeeded in preliminary verification of 0.77μm low threshold room temperature operation in an oxide stripe DFB laser.

    DOI: 10.2184/lsj.16.732

  • 短波長帯分布帰還型半導体レ-ザ- (「半導体レ-ザ-とその製作」特集号)

    中野 義昭, 多田 邦雄

    レ-ザ-研究   16 ( 11 )   p732 - 740   1988年11月 (   ISSN:0387-0200 )

     詳細

    記述言語:日本語   出版者・発行元:レ-ザ-学会  

    DOI: 10.2184/lsj.16.732

  • 短波長帯分布帰還型半導体レーザー

    中野 義昭, 多田 邦雄

    レーザー研究   16 ( 11 )   732 - 740   1988年 (   ISSN:0387-0200 )

     詳細

    記述言語:日本語   出版者・発行元:The Laser Society of Japan  

    To utilize excellent spectral characteristics of semiconductor distributed feedback (DFB) lasers in the various fields of optical electronics applications, it is necessary to expand the wavelength range in which their oscillation is available, especially into short wavelength region. Here we describe our effort to develop short wavelength DFB lasers with GaAIAs/GaAs materials. As for 0.88μm range, we have successfully fabricated a high-performance device with very low threshold current by employing buried heterostructure. Introduction of the micro-fabrication techniques such as the reactive ion etching has enabled us to realize a 0.88?Em DFB laser with novel modulated stripe width structure for complete single longitudinal mode oscillation. We have also succeeded in preliminary verification of 0.77μm low threshold room temperature operation in an oxide stripe DFB laser.

    DOI: 10.2184/lsj.16.732

  • キャリア注入型光変調器/スイッチ用ヘテロ接合バイポーラトランジスタの試作

    岡田至崇, 林秀樹, 中野義昭, 多田邦雄

    電子情報通信学会半導体・材料部門全国大会講演論文集   1987 ( 2 )   2.126   1987年11月

     詳細

    記述言語:日本語  

  • 低閾値GaAlAs/GaAs分布帰還型レ-ザへのストライプ幅変調構造の適用〔英文〕

    中野 義昭, 多田 邦雄

    東京大学工学部総合試験所年報   ( 46 )   p77 - 82   1987年9月 (   ISSN:0371-3067 )

     詳細

    記述言語:日本語   出版者・発行元:東京大学工学部総合試験所  

  • 半導体分布帰還型レーザの回折格子形状および次数に関する研究 I

    多田邦雄, LUO Y, 中野義昭

    電子情報通信学会技術研究報告   87 ( 122 )   1-8(OQE87-47)   1987年7月 (   ISSN:0913-5685 )

     詳細

    記述言語:日本語  

  • 半導体分布帰還型レーザの回折格子形状および次数に関する研究 I

    多田邦雄, LUO Y, 中野義昭

    電気学会光・量子デバイス研究会資料   OQD-87 ( 48-65 )   1 - 8   1987年7月

     詳細

    記述言語:日本語  

  • GaAlAs/GaAsリッジ導波路型DFBレ-ザに関する研究〔英文〕

    中野 義昭, 多田 邦雄

    東京大学工学部総合試験所年報   ( 45 )   p71 - 76   1986年9月 (   ISSN:0371-3067 )

     詳細

    記述言語:日本語   出版者・発行元:東京大学工学部総合試験所  

  • GaAlAs/GaAsリッジ導波路型DFBレーザ

    中野義昭, ワーナー M, ワン S, 多田邦雄

    電気学会光・量子デバイス研究会資料   OQD-85 ( 57-64 )   41 - 48   1985年7月

     詳細

    記述言語:日本語  

  • FP共振器と結合したDFB,DBRレーザとその発振波長温度補償特性の解析

    中野義昭, 多田邦雄

    電気学会光・量子デバイス研究会資料   OQD-84 ( 54-69 )   55 - 62   1984年7月

     詳細

    記述言語:日本語  

  • 温度補償結合共振器半導体レーザ(TC3レーザ)の提案と解析

    多田邦雄, 中野義昭, 後川彰久

    電子通信学会技術研究報告   83 ( 188 )   29-36(OQE83-75)   1983年11月

     詳細

    記述言語:日本語  

  • 反応性イオンエッチングプラズマ中のイオン質量分析

    菅野卓雄, 浅田邦博, 中野義昭

    東京大学工学部総合試験所年報   42 ( 42 )   81 - 85   1983年9月 (   ISSN:0371-3067 )

     詳細

    記述言語:日本語   出版者・発行元:東京大学工学部総合試験所  

  • 一部改造した四重極質量分析計によるRIEプラズマ中のイオン質量分析

    中野義昭, 浅田邦博, 菅野卓雄

    電子通信学会技術研究報告   82 ( 108 )   9-14(SSD82-47)   1982年8月

     詳細

    記述言語:日本語  

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    総ページ数:x, 192p   記述言語:日本語   著書種別:学術書

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    Yariv, Amnon, Yeh, Pochi, 多田, 邦雄, 神谷, 武志, 石川, 卓哉, 伊藤, 文彦, 鎌田, 憲彦, 中野, 義昭, 林, 秀樹 (非線形光学), 板谷, 太郎, 岡田, 至崇, 土屋, 昌弘, 中林, 隆志

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    オーム社  2003年3月  ( ISBN:4274132749

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    Yariv, Amnon, 石川, 卓哉, 板谷, 太郎, 伊藤, 文彦, 岡田, 至崇, 鎌田, 憲彦, 土屋, 昌弘, 中野, 義昭, 中林, 隆志, 林, 秀樹 (非線形光学), 多田, 邦雄, 神谷, 武志

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